JPH06132334A - Mold and manufacture thereof, and semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To manufacture a resin-sealing mold suitable for the resin-sealed type integrated circuit in a short period at low cost even if the circuit is a different type/small lot production. CONSTITUTION:The mold manufacturing method is composed of a process in which a mold releasing agent is applied to the surface of a base material 50 having protruding parts 50A formed by copying the surface of a resin-sealed type integrated circuit, a process in which a metal layer 11A is formed on the surface of the base material 50 where a mold-releasing agent is applied, a process in which a supporting member 11B, which supports the metal layer 11A by feeding metal material to the surface of the metal layer 11A, is formed, and a process in which a chase block 11 is molded by releasing the supporting member 11B from the base material 50 integrally with the metal layer 11A.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealing die used for manufacturing a resin-sealed integrated circuit in which a semiconductor such as an LSI is sealed with a resin, a method for manufacturing the same, and a method for manufacturing the same. The present invention relates to a semiconductor manufacturing apparatus using a mold manufactured by.

[0002]

2. Description of the Related Art A conventional resin sealing mold of this type will be described with reference to FIG. The mold for resin sealing is shown in Fig. 5.
As shown in (a) and (b), the upper die 10 and the lower die 2
0 and a plunger 30 for sending a molding resin under pressure, the molds 10 and 20 are moved up and down relatively, and the semiconductor device mounted thereon together with the lead frame L is sandwiched between the molds 10 and 20. The molds 10 and 2
A resin for molding is injected into 0 to manufacture a resin-sealed integrated circuit. The upper mold 10 and the lower mold 20 include chase blocks 11 and 21, frame bodies 12 and 22 that hold the chase blocks 20, and heaters 13 and 23 built in the frame bodies 12 and 22, respectively. Prepare,
The chase blocks 11 and 21 are heated by the heaters 13 and 23 to melt, for example, thermosetting resin, and the heat is applied to the cavities 14 and 24 formed in the chase block 11 via the runner 15 and the gate 16. A curable resin is injected by the plunger 30 to seal the semiconductor element.

Further, in the case of manufacturing the above-mentioned conventional die 10, as shown in FIG. 6, usually, a block-shaped metal material 1 is used.
A recess 14 corresponding to the cavity 14 is formed by cutting 1A.
After forming A, the electrode 1 is further inserted into the recess 14A.
The electric discharge machining with 00 and the dimension measurement are repeated to gradually form the cavity 14 having a predetermined dimension. And
As for the lower mold 20, the cavity 24 is made similarly to the upper mold 10.

Further, in the case of the conventional semiconductor manufacturing apparatus using the respective molds 10 and 20, since the respective molds 10 and 20 are expensive, presence or absence of foreign matter is monitored by a plurality of infrared sensors. In addition, each mold 1 with multiple compression force sensors
Each die 1 by detecting 0, 20 abnormal compression force
0, 20 foreign matter is detected and each die 10, 20 is detected by the foreign matter.
Is prevented, or the positional deviation of the molds 10 and 20 from a predetermined position is spotwise detected by a plurality of infrared sensors. That is, if any one of the detection values by the compression force sensor at a plurality of points exceeds the predetermined value, each mold 1 is based on this detection value.
By stopping the driving of 0 and 20, each mold 10,
It is designed to prevent damage to 20.

[0005]

However, when the conventional upper mold 10 and the lower mold 20 are manufactured, as described above,
After cutting the concave portion 14A corresponding to the cavity 14 with the block-shaped metal material 10A in advance, the electrode 100 is further processed.
Since the cavity 14 is formed by the electric discharge machining using, the expensive electric discharge machine is required, and moreover,
The electrical discharge machining of the cavity 14 usually requires rough machining and subsequent dimension measurement, medium machining and subsequent dimension measurement, and finish machining and subsequent dimension measurement, and the electrical discharge machining alone involves a multi-step machining process. There is a problem that it takes a long time to process each die 10 and 20 and the manufacturing cost becomes extremely high. Further, recently, the demand for resin-sealed integrated circuits has been diversified, and the demand for high-mix low-volume production of resin-sealed integrated circuits has increased, and in order to manufacture molds that meet such demands. Shortening of processing time and reduction of manufacturing cost have been major issues.

Further, in the case of the conventional semiconductor manufacturing apparatus using the respective molds 10 and 20, the respective molds 10 and 20 are expensive, and the respective molds 10 and 20 are protected from foreign matters, or As a means for preventing the molds 10 and 20 from being misaligned, it is necessary to provide an infrared sensor and a compressive force sensor for spot detection at a plurality of positions respectively, which causes a problem that the monitoring system becomes complicated and expensive. .

The present invention has been made to solve the above-mentioned problems, and even in the case of a resin-sealed integrated circuit of a high-mix low-volume production type, a resin-sealing die suitable for each type can be provided in a short time. Moreover, it is an object of the present invention to provide a mold and a manufacturing method thereof that can be repeatedly manufactured at low cost.

It is another object of the present invention to provide a semiconductor manufacturing apparatus which simplifies the mold monitoring system and can be manufactured at low cost.

[0009]

According to a first aspect of the present invention, there is provided a method of manufacturing a mold, wherein a mold releasing agent is provided on a surface of a mother body having a convex portion formed following the surface of a resin-sealed integrated circuit. A step of forming a metal layer on the surface of the base body to which the release agent is attached, and a step of supplying a metal material to the surface of the metal layer to form a support for supporting the metal layer. When,
And a step of releasing the support from the base integrally with the metal layer.

The mold according to claim 2 of the present invention is
In a mold for resin encapsulation used when manufacturing a resin-encapsulated integrated circuit, a metal layer having a cavity formed in conformity with the surface of the resin-encapsulated integrated circuit, and a support for the metal layer. It has a support.

A semiconductor manufacturing apparatus according to a third aspect of the present invention is a semiconductor manufacturing apparatus in which a semiconductor element is sealed with a resin when manufacturing a resin-sealed integrated circuit. An upper mold having a metal layer having a cavity formed in conformity with the surface of the circuit and a support for supporting the metal layer, a lower mold having a cavity similar to the upper mold, and both molds. And a monitoring device for visually monitoring the machined surface of each of the molds driven by the driving device.

[0012]

According to the first aspect of the present invention, a mold release agent is applied to the surface of the base body having the convex portion formed following the surface of the resin-sealed integrated circuit, and then the base body of the base body is formed. A metal layer is formed on the surface, and then a metal material in a molten state is supplied to the surface of the metal layer to form a support for supporting the metal layer, and the support is passed through the release agent. The mold according to claim 2 can be manufactured by releasing the mold integrally with the metal layer.

According to the third aspect of the present invention, when the semiconductor element is sealed with resin, the monitoring surfaces of the upper mold and the lower mold are two-dimensionally monitored by the monitoring device. , Whether or not foreign matter is attached to each of these molds, or whether or not each mold is misaligned from a predetermined position to prevent damage to each mold due to foreign matter, and It is possible to prevent resin molding defects due to misalignment of the mold.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The features of the present invention will be described below based on the embodiments shown in FIGS. In each of the drawings, FIG. 1 is a view showing an embodiment of a mold of the present invention, FIG. 1 (a) is a sectional view thereof, and FIG. 1 (b) is an enlarged view of a part of FIG. FIG. 2 is a partial cross-sectional view showing a method of manufacturing a mold according to the present invention in the order of steps. FIG. 2A is a cross-sectional view showing a mother body of the mold, and FIG.
Is a cross-sectional view showing a state where a metal layer is formed on the surface of the base body shown in FIG. 4A, and FIG. 6C is a cross-sectional view showing a state where a support is formed on the base body shown in FIG. 3 is a perspective view showing a method for processing the base body shown in FIG. 2, and FIG. 4 is a front view showing an embodiment of the semiconductor manufacturing apparatus of the present invention.

The mold of this embodiment, for example, the upper mold 10 is used when a semiconductor element is sealed on a lead frame with a resin, and as shown in FIG. 1, a resin-sealed mold as a product. A metal layer 11A having a cavity 14 conforming to the surface shape of an integrated circuit (not shown), and the metal layer 11
Support 11B made of a metal material for supporting A from the back surface
And is configured. Then, the metal layer 11A
The support 11B and the support 11B are in close contact with each other to form an integrated chase block 11.

The metal layer 11A is, for example, a first metal layer 11A ₁ formed by laminating a metal such as nickel on the surface of the support 11B, and a first metal layer 11A ₁ laminated on the first metal layer 11A ₁ . It is preferable that the metal layer 11A ₁ and the second metal layer 11A ₂ which has a hardness higher than that of the metal layer 11A _{1 and is made} of a high hardness metal such as titanium or tungsten.
By disposing the second metal layer 11A ₂ having a high hardness on the surface of the cavity 14 as described above, the mechanical strength of the cavity 14 can be increased.

As the metal material forming the support 11B, an alloy of aluminum and silicon, an alloy of antimony and silicon, or the like is preferably used. The coefficient of linear expansion of this alloy and the coefficient of thermal expansion of the metal forming the metal layer 11A are substantially the same in order to prevent distortion between the metal layer 11A and the support 11B and prevent delamination between them. Are preferred. For example, when the metal layer 11A is formed of nickel and an alloy of 21% silicon and 79% aluminum is used as the support 11B, the coefficient of thermal expansion of the metal layer 11A and the support 11B are used.
The coefficients of thermal expansion of are substantially the same, which makes the mold excellent.

Next, an embodiment of the method for manufacturing a mold of the present invention will be described with reference to FIGS. When the upper mold 10 is manufactured using the mold manufacturing method of this embodiment, it is carried out as follows. That is, the convex portion 50A formed following the surface shape of the upper half of the resin-sealed integrated circuit
A mother body 50 (see FIG. 2A) having the above is prepared in advance. Then, after a release agent made of metal oxide such as molybdenum oxide is attached to the surface of the base body 50, a high hardness metal such as titanium or tungsten is sprayed on the release agent-applied surface. The second metal layer 11A ₂ is formed, and subsequently nickel is electrodeposited on the surface of the second metal layer 11A ₂ by electroforming to form the first metal layer 11A ₁ and the metal layer 1
1A is formed as shown in FIG. After that, Figure 2
As shown in (c), after arranging a frame body 51 around the surface of the base body 50, a molten alloy of nickel and silicon is poured into the frame body 51, and the alloy is mixed with the metal layer 11A and its interface. Then, they are integrated by alloying to form the support 11B. After the alloy of nickel and silicon is cooled and solidified, the frame 51 is removed, and the support 11B is further removed.
1 is separated from the base 50, the support 11B and the metal layer 11A integrated with the support 11B are separated from the base 50 with the release agent as a boundary, whereby the chase block 11 shown in FIG. 1 can be manufactured. .

When forming the runner 15 and the gate 16 on the chase block 11, the runner 1
5 and a gate member corresponding to the gate 16 are made of metal in advance, the mold member is arranged at a predetermined portion of the base body 50, and then the metal is sprayed and electroformed as described above, thereby forming a runner. 15 and the gate 16 can be formed simultaneously with the cavity 11. The mold member made of cemented carbide is preferably used.

After the chase block 11 is manufactured as described above, the chase block 11 is produced in the same manner as in the conventional case.
The upper die 10 can be manufactured by assembling the above to the frame body 12 having the heater 13 built therein. Then, the lower mold 20 can be similarly manufactured.

On the other hand, the matrix 50 used in this embodiment is shown in FIG.
3, the metal material forming the mother body 50 is mechanically cut in the direction shown by the arrow in FIG. 3 to form the convex portion 50 having the same shape as the surface shape of the upper half of the resin-sealed integrated circuit.
A can be formed. That is, the convex portion 50A is
Measuring the surface shape of the upper half of the resin-sealed integrated circuit,
By cutting the surface of the metal material based on the measurement result, the tapered surface and the corner can be formed easily and accurately. The metal material forming the base body 50 can ensure the finishing accuracy of machining and has the same coefficient of thermal expansion as that of the material of the metal layer 11A, and the metal forming the support body 11B (in the present embodiment, in the present embodiment). , An alloy of aluminum and silicon, or an alloy of antimony and silicon) is preferably used. As such a metal material, for example, an alloy containing iron, nickel, and chromium as main components is preferable, but the metal material is not limited thereto.

As described above, according to the present embodiment, the chase block 11 is formed by the thermal spraying and electrodeposition of the metal on the convex portion 50A of the mother body 50 having the same surface shape and the same size of the resin-sealed integrated circuit. Since the cavity 14 is copied, it is not necessary to perform multi-step electric discharge machining using an expensive electric discharge machine as in the prior art, and the chase block 1 is highly accurate and inexpensive with less machining steps than the conventional one.
1 can be repeatedly manufactured in a short time, and the cost of each mold 10 and 20 can be reduced. Further, since the shape and size of the cavity 14 of the upper mold 10 of the present embodiment is determined by the surface shape of the metal layer 11A sprayed and electrodeposited on the convex portion 50A of the base body 50 on the convex portion 50A side, Simply by sequentially forming the support 11B,
Since it is not necessary to measure the dimensions, the manufacturing time can be shortened also from this point.

Further, one embodiment of the semiconductor manufacturing apparatus of the present invention will be described with reference to FIG. As shown in FIG. 4, the semiconductor manufacturing apparatus 60 of this embodiment is an apparatus for manufacturing a resin-sealed integrated circuit by sealing a semiconductor element with a thermosetting resin, and is a surface of the resin-sealed integrated circuit. Upper mold 10 having a metal layer 11A having a cavity 14 formed in accordance with the above and a support 11B supporting the metal layer 11A.
A lower mold 20 having a cavity 24 similar to that of the upper mold 10, a drive device 62 for moving the molds 10 and 20 relative to each other along a rod 61, and a drive device 62 for moving the mold up and down. Monitoring devices (for example, charge-coupled device (CCD) monitoring devices) 63 and 63 for individually and two-dimensionally monitoring the processing surfaces of the molds 10 and 20 are provided, and are driven under the control of a control device (not shown). Is configured.

Next, the operation of the semiconductor manufacturing apparatus will be described. The lead frame having the semiconductor element mounted thereon reaches a predetermined position with the upper mold 10 and the lower mold 20 being most opened, and the CCD monitoring devices 63, 63 cause foreign matter to be present on the processed surfaces of the respective molds 10, 20. If the lead frame is not detected, or if the lead frame is correctly set at a predetermined position of the lower die 20, the lead frame is sandwiched between the respective dies 10 and 20. Then, under this condition, the heater 1
When the thermosetting resin that has been heated and melted in Nos. 3 and 23 (see FIG. 5A) is extruded by the plunger 30, the thermosetting resin is runner 15 and gate 16 (FIG. 5B).
(Refer to FIG. 4), the cavities 14 and 24 are injected from the gate to fill the cavities 14 and 24, at which point the plunger 30 is stopped, and the molten thermosetting resin is thermoset in the cavities 14 and 24. To do. After that, the driving device 62 drives again to return the respective molds 10 and 20 to the original positions, take out the lead frame, and prepare for the next sealing operation.

Further, when at least one of the CCD monitoring devices 63, 63 detects a foreign substance on the processed surface of each mold 10, 20 or detects a displacement of each mold 10, 20 from a predetermined position. , The detection signal is transmitted to the control device. When the control device receives the detection signal,
The control signal is transmitted to the driving device to stop the driving device. Therefore, even if the processed surface of each of the molds 10 and 20 has a hardness lower than that of the conventional one, the semiconductor manufacturing apparatus 60 of the present embodiment does not pinch a foreign substance and may damage each processed surface. Absent.

As described above, according to this embodiment, C
Since the machined surfaces of the respective molds 10 and 20 are two-dimensionally monitored by the CD monitoring devices 63 and 63, the foreign matter or the positional deviation of the frame can be surely detected and the driving device can be stopped. Even if the processed surfaces of the molds 20 and 20 are softer than the conventional ones, there is no risk that the molds 10 and 20 will be damaged by the foreign matter being sandwiched between them. Further, according to this embodiment, the semiconductor manufacturing apparatus has a CC as a monitoring system.
Since it is only necessary to provide the D monitoring device 63 at two places, it is possible to reduce the number of sensors installed and reduce the cost of the device itself.

The present invention is not limited to the above embodiments, and a step of applying a release agent to the surface of the mother body having the convex portions formed following the surface of the resin-sealed integrated circuit. A step of forming a metal layer on the surface of the base body to which the release agent is attached, a step of supplying a metal material to the surface of the metal layer to form a support for supporting the metal layer, The present invention includes all molds that are manufactured by the method for manufacturing a mold, including a step of releasing the support integrally with the metal layer from the mother body.

Further, according to the present invention, in a semiconductor manufacturing apparatus in which a semiconductor element is sealed with resin when manufacturing a resin-sealed integrated circuit, the resin-sealed integrated circuit is formed in conformity with the surface of the resin-sealed integrated circuit. An upper die having a metal layer having a cavity and a support for supporting the metal layer, a lower die having a cavity similar to the upper die, a driving device for driving these two dies, and the driving device. The present invention is included as long as it is provided with a monitoring device that visually monitors the processing surface of each mold driven by the above.

[0029]

As described above, according to the invention of claim 1 of the present invention, a mother body having the same mold as the resin-sealed integrated circuit is used, and this mold is simply copied to obtain the invention. Since the molds described above can be molded, even in the case of a resin-sealed integrated circuit of high-mix low-volume production type, it is possible to repeatedly manufacture molds suitable for each type in a short time at low cost.

According to the third aspect of the present invention, since the monitoring system is composed only of the monitoring device for two-dimensionally monitoring the machined surface of the mold, the mold monitoring system is A semiconductor manufacturing device can be manufactured at a low cost with simplification.

[Brief description of drawings]

1A and 1B are views showing an embodiment of a mold of the present invention, in which FIG. 1A is a sectional view thereof and FIG. 1B is a partial sectional view showing a part of FIG. Is.

FIG. 2 is a diagram showing a method of manufacturing a mold of the present invention in the order of steps,
1A is a cross-sectional view showing the mother body of the mold, FIG. 1B is a cross-sectional view showing a state where a metal plating layer is formed on the surface of the mother body shown in FIG. 1A, and FIG. It is sectional drawing which shows the state which formed the support body in the mother body shown in the same figure (b).

FIG. 3 is a perspective view showing a method of processing the mother body shown in FIG.

FIG. 4 is a front view showing an embodiment of the semiconductor manufacturing apparatus of the present invention.

FIG. 5 is a view showing a general conventional mold, FIG. 5 (a) is a cross-sectional view showing a state in which an upper mold and a lower mold are overlapped and resin is sealed, and FIG. 5 (b) is It is a top view showing an upper metallic mold.

FIG. 6 is a perspective view showing a state of electric discharge machining of a cavity of a conventional mold.

[Explanation of symbols]

10 Upper Mold 11 Chase Block 11A Metal Layer 11A ₁ First Metal Layer 11B Support 14 Cavity 20 Lower Mold 21 Chase Block 24 Cavity 50 Base 50A Convex 60 Semiconductor Manufacturing Device 62 Driving Device 63 CCD Monitoring Device

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI technical display location // B29L 31:34 4F (72) Inventor Yoshinori Taguchi 9-5 Daikokucho, Tsurumi-ku, Yokohama-shi, Kanagawa No. Stock Company Matsumoto

Claims (3)

[Claims] 1. A step of applying a release agent to the surface of a base having convex portions formed following the surface of a resin-encapsulated integrated circuit, and a metal layer on the surface of the base to which the release agent is applied. A step of forming a support for supporting the metal layer by supplying a metal material to the surface of the metal layer, and a step of releasing the support integrally with the metal layer from the matrix. And a method for manufacturing a mold. 2. A metal mold for resin encapsulation used when manufacturing a resin-encapsulated integrated circuit, comprising: a metal layer having a cavity formed along the surface of the resin-encapsulated integrated circuit; A metal mold having a support for supporting the metal layer. 3. A semiconductor manufacturing apparatus for sealing a semiconductor element with resin when manufacturing a resin-sealed integrated circuit, the metal having a cavity formed along the surface of the resin-sealed integrated circuit. An upper mold having a layer and a support for supporting the metal layer, a lower mold having a cavity similar to that of the upper mold, a driving device for driving these molds, and a driving device driven by the driving device. A semiconductor manufacturing apparatus, comprising: a monitoring device that visually monitors a processing surface of each mold.