JPH06124802A - Resistor - Google Patents

Abstract

PURPOSE:To obtain a resistor having a stable performance by making use of a protective film containing silicon oxide that is composed of pure inorganic material and is superior in heat resistance. CONSTITUTION:A base body 1 which is composed of an insulating material consisting essentially of alumina of 80% is heated at 240-260 deg.C and a protective film 5a containing silicon oxide of at least 99.9% is formed thereon by approx. 5000% through vacuum deposition. Further, a thin film 2 such as a nichrome alloy, etc., for example, and an electrode film 3 such as a gold, etc., for example, are formed on the upper layer thereof through vacuum deposition or spattering. Thus, by forming a protective film made of pure silicon oxide under the thin film for resistor, even when a base body containing impurities is used, the influences of the impurities in the base body such as an alkaline metal, etc., for example, can be suppressed, and the deterioration due to the anodic oxidization phenomenon of a resistor in use can be also prevented, resulting in high reliability of the resistor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor used in general consumer or industrial equipment and a resistor used in a special environment such as in a vacuum.

[0002]

2. Description of the Related Art In a conventional resistor, a resistor thin film and an electrode film are directly deposited on an alumina-based substrate by a vacuum deposition method or a sputtering method. The resistance thin film is coated with an organic paint having excellent insulation and adhesiveness to prevent characteristic changes from the external atmosphere.

FIG. 1 is an example of a conventional resistor, in which a resistance thin film 2 and an electrode film 3 are deposited on a substrate 1, and then a coating film 4 is formed on the resistance thin film 2.

[0004]

A conventional resistor uses an alumina-based substrate, but its purity is 70% to 9%.
It is 0% and contains impurities. Further, impurities may be attached to the substrate during the manufacturing process of the substrate or the packaging and transportation processes. This impurity causes the stability of the resistor to be impaired.

High purity controlled substrates and substrates glaze-treated with pure inorganic materials are also commercially available, but they are expensive and do not meet the market price of resistors.

On the other hand, the conventional resistor is oxidized by heat applied in the manufacturing process thereof, is deteriorated in the resistance thin film in the resistance circuit forming process such as etching or trimming for obtaining a desired resistance value, and is protected with the protective coating film. There is a problem that the production efficiency is lowered or the performance is deteriorated due to the influence of the stress caused by the difference in the coefficient of thermal expansion.

Further, in recent years, there is a tendency that the demand for resistors used in special environments such as vacuum equipment and artificial satellites is increasing, and conventional resistors have problems in heat resistance and generation of outgas. there were.

Further, even if the electronic circuit is designed without error, the resistance value must be finely adjusted due to variations in the characteristics of each circuit element. In this case, it is difficult for the conventional resistor to readjust the resistance value after mounting, and the correction resistor is used, which is an obstacle to improvement in mounting density.

The present invention has been made to solve these problems, and provides a resistor having stable performance by using a protective film of silicon oxide which is made of a pure inorganic material and has excellent heat resistance. Is intended.

[0010]

The present invention is characterized in that a protective film of 99% or more of silicon oxide is deposited on a flat plate-shaped or cylindrical substrate by a vacuum deposition method or the like. For example, a resistor thin film of, for example, a nichrome alloy and an electrode film of, for example, gold are deposited, circuits are formed to obtain a desired resistance value, and protective coating is performed to complete a resistor.

In the present invention, a protective film of silicon oxide: 99% or more is deposited on a substrate by a vacuum deposition method or the like, and a resistive thin film of, for example, a nichrome alloy and a gold electrode film, for example, are formed on the protective film. Another feature of the present invention is that after depositing a film to form a circuit for obtaining a desired resistance value, a protective film of silicon oxide is deposited again.

In the present invention, the above-mentioned resistor is subjected to heat treatment at 150 ° C. to 400 ° C. in the atmosphere, or at 150 ° C. to 400 ° C. in a vacuum or in an atmosphere of an inert gas such as argon. It is also characterized by performing processing.

A circuit is formed by forming a resistor having a circuit for finely adjusting the resistance value on a resistor thin film deposited on a substrate, and a protective film of 99% or more of silicon oxide is deposited on the upper layer by a vacuum deposition method or the like. It is also characterized by doing.

[0014]

[Operation] As described above, the present invention has the following effects by utilizing the protective film containing silicon oxide as a main component.

By depositing a protective film of pure silicon oxide on the lower layer of the resistance thin film, even if a substrate containing impurities is used, the influence of impurities such as alkali metal in the substrate is suppressed, and It is possible to prevent deterioration due to the anodic oxidation phenomenon of the resistor.

By depositing a protective film of silicon oxide on the resistor thin film, heat treatment at high temperature becomes possible, and the physical stress received by the resistor thin film is relaxed until the protective film is formed, and it is electrically stable. It becomes the structure.

The protective film of silicon oxide on the resistance thin film has heat resistance, and almost no outgas is generated even in a vacuum or high temperature environment.

Since the protective film of silicon oxide allows the YAG laser to pass therethrough, an auxiliary circuit is provided for the purpose of finely adjusting the resistance value when the resistance thin film is formed into a circuit. Adjustment is possible.

[0019]

[Embodiment 1] An embodiment according to the contents of claim 1 of the present invention will be described below with reference to the drawings. FIG. 2 is an explanatory view showing a resistor of the embodiment. Alumina: 80
% Of silicon oxide as a main component by heating the substrate 1 made of an insulating material at 240 ° C. to 260 ° C. and vacuum evaporation method: 99.
About 5000% or more of the protective film 5a of 9% or more was deposited. After depositing a resistance thin film 2 such as a nichrome alloy and an electrode film 3 such as gold on the upper layer by a vacuum deposition method or a sputtering method, a resistor circuit is formed to obtain a desired resistance value. Further, a protective coating 4 was formed on the upper layer to complete the resistor.

The resistor manufactured as described above is heated at 80 ° C. and 95 ° C.
The results of the load life test carried out in the constant temperature and humidity chamber of% RH are shown in FIG. In FIG. 3, the case where there is no protective film of silicon oxide is shown by B when the protective film of silicon oxide is provided below the A resistance thin film. As can be seen from FIG. 3, a highly stable resistor can be manufactured by forming a protective film of silicon oxide.

[0021]

[Embodiment 2] An embodiment according to the contents of claim 2 of the present invention will be described below with reference to the drawings. FIG. 4 is an explanatory view showing a resistor of the embodiment. Alumina: 70
% Of the cylindrical substrate 1 made of an insulating material as a main component.
By heating from 0 ° C. to 260 ° C. and vacuum vapor deposition, silicon oxide:
About 5000% or more of the protective film 5a was deposited on the protective film 5a.
After depositing a resistance film 2 of, for example, a nichrome alloy on the upper layer by a vacuum deposition method or a sputtering method, caps 6 are press-fitted at both ends thereof and lead wires 7 are welded,
It was spirally trimmed to obtain the desired resistance. Further, a protective coating 4 was formed on the upper layer to complete the resistor.

The resistor manufactured as described above is heated to 80 ° C. 95%.
The results of the load life test conducted in the constant temperature and humidity chamber of% RH are shown in FIG. In FIG. 5, the case without a protective film of silicon oxide is shown as C, and the case with a protective film of silicon oxide as a lower layer of the resistor thin film is shown as D. As can be seen from FIG. 5, a highly stable resistor can be manufactured by forming a protective film of silicon oxide.

[0023]

[Embodiment 3] An embodiment according to the content of claim 3 of the present invention will be described below with reference to the drawings. FIG. 6 is an explanatory view showing a resistor of the embodiment. Alumina: 80
% Of silicon oxide as a main component by heating the substrate 1 made of an insulating material at 240 ° C. to 260 ° C. and vacuum evaporation method: 99.
About 5000% or more of the protective film 5a of 9% or more was deposited. A resistance film 2 made of, for example, a nichrome alloy and an electrode film 3 made of, for example, gold are formed on the upper layer by a vacuum deposition method or a sputtering method.
After depositing a film, a resistor circuit is formed to obtain a desired resistance value, and silicon oxide:
Approximately 8000% of the protective film 5b of 99.9% or more was deposited.

[0024]

[Embodiment 4] An embodiment according to the contents of claim 4 of the present invention will be described below with reference to the drawings. FIG. 7 shows the results of a standing test conducted in a constant temperature and constant humidity chamber of 150 ° C. using a sample obtained by heat-treating the resistor of Example 3 at 200 ° C. for 4 hours in the constant temperature chamber. In FIG. 7, E is the case where there is no protective film of silicon oxide and protective coating is performed with an organic paint, F is the case where there is a protective film of silicon oxide in the lower and upper layers of the resistance thin film, and further heat treatment at 200 ° C. for 4 hours This is indicated by G. As can be seen from FIG. 7, a highly stable resistor can be manufactured by heat treatment.

[0025]

[Embodiment 5] An embodiment according to the contents of claim 5 of the present invention will be described below with reference to the drawings. FIG. 7 shows the results of a standing test in a constant temperature and constant humidity chamber at 150 ° C. using a sample obtained by heat-treating the resistor of Example 3 at 300 ° C. for 4 hours in vacuum. In FIG. 7, the case where the lower and upper layers of the resistance thin film have protective films of silicon oxide is F, and further 3
The case where it heat-processed at 00 degreeC for 4 hours was shown by H. As can be seen from FIG. 7, a highly stable resistor can be manufactured by heat treatment.

[0026]

[Embodiment 6] An embodiment according to the contents of claim 6 of the present invention will be described below with reference to the drawings. FIG. 7 shows the results of a standing test in a constant temperature and humidity chamber at 150 ° C., which was obtained by subjecting the resistor of Example 3 to heat treatment at 300 ° C. for 4 hours in an argon gas atmosphere as a sample. In FIG. 7, F shows the case where the lower and upper layers of the resistance thin film have the protective film of silicon oxide, and I shows the case where the heat treatment is further performed at 300 ° C. for 4 hours. As can be seen from FIG. 7, a highly stable resistor can be manufactured by heat treatment.

[0027]

[Embodiment 7] An embodiment according to the contents of claim 8 of the present invention will be described below with reference to the drawings. In the resistor described in Example 3, the resistance thin film for resistance as shown in FIG. 8 was provided with a circuit for finely adjusting the resistance value to form a resistance circuit. In FIG. 8, eight trimmable portions are provided on the base 1. In this circuit, it is possible to increase the resistance value by about 27% with respect to the initial resistance value by trimming 8 parts or 9 parts.

By trimming the 10a portion, the resistance value can be increased by about 13% with respect to the initial resistance value.
By trimming the 10a portion and the 10b portion, the resistance value can be increased by about 27% with respect to the initial resistance value.

By trimming the 11a portion, the resistance value can be increased by about 9% with respect to the initial resistance value. Similarly, by trimming the portions 11a and 11b, the resistance value can be increased by about 18% with respect to the initial resistance value. Further, by trimming the portions 11a, 11b and 11c, the resistance value can be increased by about 27% with respect to the initial resistance value.

By trimming the 12th part, it is possible to raise the resistance value to an arbitrary resistance value up to 16% of the initial resistance value.

[0031]

As described above, the product of the present invention utilizes the thin film of silicon oxide as the protective film, so that various problems of the prior art can be solved.

By depositing a protective film of pure silicon oxide on the lower layer of the resistance thin film, even if a substrate containing impurities is used, the influence of impurities such as alkali metal in the substrate is suppressed, and High reliability can be secured because deterioration of the resistor due to anodizing phenomenon can be prevented.

By depositing a protective film of silicon oxide on the resistance thin film, heat treatment at a high temperature becomes possible, and the physical stress received by the resistance thin film until the protection film is formed is relaxed and electrically stable. The effect of being converted is obtained.

Even when the product of the present invention is used in a vacuum or in a high temperature environment, it is not necessary to consider generation of outgas.

By using the product of the present invention, it is possible to adjust the resistance value by trimming after mounting the resistor, so that the correcting resistor is not required.

Further, in the embodiment of the present invention, the vacuum deposition method is adopted as the method of forming the protective film, but it goes without saying that a method such as sputtering or CVD method may be used.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a conventional resistor.

FIG. 2 and

FIG. 6 is a cross-sectional view of a flat plate resistor according to an embodiment of the present invention.

FIG. 4 is a partial cross-sectional view of a cylindrical resistor according to an embodiment of the present invention.

FIG. 8 is an explanatory diagram of a resistance circuit according to an embodiment of the present invention.

FIG. 3 and

FIG. 5 shows a resistor manufactured according to an embodiment of the present invention at 80 ° C.
It is the figure which showed the load life test result in 95% RH.

FIG. 7 is a resistor 150 made in accordance with an embodiment of the present invention.
It is a figure showing the leaving test result in ° C.

[Explanation of symbols]

1 Base 2 Resistive Thin Film 3 Electrode Film 4 Protective Coating Film 5a ・ 5b Silicon Oxide Protective Film 6 Cap 7 Lead Wire 8 ・ 9 ・ 10a ・ 10b ・ 11a ・ 11b ・ 11c ・ 12 Trimmable Part

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[Procedure amendment]

[Submission date] October 18, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a conventional resistor.

FIG. 2 is a sectional view of a flat plate resistor according to an embodiment of the present invention.

FIG. 3 shows a resistor manufactured according to an embodiment of the present invention at 80 ° C.
It is the figure which showed the load life test result in 95% RH.

FIG. 4 is a partial cross-sectional view of a cylindrical resistor according to an embodiment of the present invention.

FIG. 5 shows a resistor manufactured according to an embodiment of the present invention at 80 ° C.
It is the figure which showed the load life test result in 95% RH.

FIG. 6 is a cross-sectional view of a flat plate resistor according to an embodiment of the present invention.

FIG. 7 is a resistor 150 made in accordance with an embodiment of the present invention.
It is a figure showing the load life test result in ° C.

FIG. 8 is an explanatory diagram of a resistance circuit according to an embodiment of the present invention.

[Explanation of Codes] 1 Substrate 2 Resistor thin film 3 Electrode film 4 Protective coating film 5a, 5b Silicon oxide protective film 6 Cap 7 Lead wire 8 Trimmable part 9 Trimmable part 10a, 10b Trimmable part 11a, 11b, 11c Trimming Possible part 12 Trimmable part

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0036

[Correction method] Change

[Correction content]

Further, in the embodiment of the present invention, the vacuum deposition method is adopted as the method of forming the protective film, but it goes without saying that a method such as sputtering or CVD method may be used.

Claims (8)

[Claims] 1. A resistor in which a protective film of 99% or more of silicon oxide is deposited on a lower layer of a resistor thin film circuit formed on a substrate. 2. A resistor in which a protective film of 99% or more of silicon oxide is deposited on a lower layer of a resistive thin film deposited on a cylindrical substrate. 3. A resistor in which a protective film of silicon oxide: 99% or more is formed on the lower layer and the upper layer of a resistance thin film circuit formed on a substrate. 4. With regard to claim 3, 150 ° C. to 400
Resistors heat-treated in the temperature range of ° C. 5. With regard to claim 3, 150 ° C. to 400
Resistors heat-treated in a vacuum atmosphere in the temperature range of ℃. 6. The method according to claim 3, which is 150 ° C. to 400 ° C.
Resistors heat-treated in the inert gas atmosphere in the temperature range of. 7. A resistor in which a protective film of silicon oxide: 99% or more is formed on an upper layer of a resistance thin film circuit formed on a substrate, and a circuit for finely adjusting the resistance value is separately provided in the resistance thin film. Resistor. 8. The resistor according to claim 3, wherein a circuit for finely adjusting a resistance value is separately provided on the resistor thin film.