JPH06123693A - Capturing inspection method and device therefor - Google Patents

Capturing inspection method and device therefor

Info

Publication number
JPH06123693A
JPH06123693A JP27456392A JP27456392A JPH06123693A JP H06123693 A JPH06123693 A JP H06123693A JP 27456392 A JP27456392 A JP 27456392A JP 27456392 A JP27456392 A JP 27456392A JP H06123693 A JPH06123693 A JP H06123693A
Authority
JP
Japan
Prior art keywords
temperature air
particles
fine particle
inspected
collection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27456392A
Other languages
Japanese (ja)
Other versions
JP3218729B2 (en
Inventor
Junichi Sato
淳一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP27456392A priority Critical patent/JP3218729B2/en
Publication of JPH06123693A publication Critical patent/JPH06123693A/en
Application granted granted Critical
Publication of JP3218729B2 publication Critical patent/JP3218729B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To avoid contamination of clean air and reduction of yield for manufacturing a semiconductor device, and lowering of its characteristics, etc., by inspecting the capturing efficiency of a fine particle-capturing body by using a fine particle with a substance having sublimation property. CONSTITUTION:First and second switching valves 19 and 20 are opened, a particle which is liberated from a plasma generation part 12 is supplied to a passage, and, at the same time, a low-temperature air is injected halfway to a chamber 14, thus enabling particles to be flocculated at the merging part of the low-temperature air. A third switching valve 21 is in blocked state at that time. In this state, air including fine particles is fed to a capturing body 13 to capture particles to be inspected which is laid out inside the chamber 14. The number of particles in air passing through the capturing body 13 is counted by a particle counter 22.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、大気中に浮遊する微粒
子を捕集する機能を有する微粒子捕集体、とりわけ半導
体装置の製造プロセスで用いられるクリーンベンチなど
のフィルタの、微粒子に対する捕集効率の検査に用いて
好適な捕集検査方法及び捕集検査装置に係わる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine particle collector having a function of collecting fine particles floating in the atmosphere, and particularly to a fine particle collecting efficiency of a filter such as a clean bench used in a semiconductor device manufacturing process. The present invention relates to a collection inspection method and a collection inspection device suitable for use in inspection.

【0002】[0002]

【従来の技術】半導体集積回路の微細化、高集積化に益
々拍車が掛かっている昨今、その製造プロセスも微細化
対応の要求にせまられている。
2. Description of the Related Art In recent years, miniaturization and high integration of semiconductor integrated circuits have been increasingly accelerated, and the manufacturing process thereof is also required to meet the miniaturization.

【0003】従って、半導体製造の歩留りの大きな阻害
要因となる微粒子いわゆるパーティクルに対する捕集効
率を検査する方法としては、大気中で凝縮する性質もっ
た例えばフタル酸ジ2−エチルヘキシル(以下DOPと
いう)のような高沸点の有機溶媒を用いる方法が現在用
いられている。
Therefore, as a method for inspecting the collection efficiency of fine particles, so-called particles, which greatly hinders the yield of semiconductor manufacturing, for example, di-2-ethylhexyl phthalate (hereinafter referred to as DOP), which has a property of condensing in the atmosphere, is used. A method using such a high boiling point organic solvent is currently used.

【0004】これは、図2に示すように、被検査微粒子
捕集体としてのフィルタ1を配置した室2に通ずる供給
通路4に、DOP源3から例えば200℃に加熱したD
OPを供給し、この供給通路4の途上に低温空気源5か
らの低温空気を供給することによってDOPを一端冷却
して、核凝縮させ、高濃度の単分散粒子にした後、フィ
ルタ1に透過させる。そして、その後段でパーティクル
カウンタ6によってパーティクル測定を行ってフィルタ
1の捕集効率をはかるものである。
As shown in FIG. 2, this is because a DOP source 3 heats D to a supply passage 4 communicating with a chamber 2 in which a filter 1 as an inspected fine particle collector is placed.
OP is supplied, and low-temperature air from the low-temperature air source 5 is supplied on the way of the supply passage 4, whereby the DOP is once cooled, and is nuclear condensed to form high-concentration monodisperse particles, which are then transmitted to the filter 1. Let Then, the particle counter 6 measures the particles in the subsequent stage to measure the collection efficiency of the filter 1.

【0005】しかし、このDOPに代表されるような高
沸点の有機溶媒を用いると、この検査測定時にフィルタ
1に捕集された有機分子が、検査後の実際の使用時に逆
にフィルタ1から抜け出してクリーンエアを汚染、すな
わちいわゆるTOC(TotalOrganic Carbon) 汚染を起
こしているということが最近判明した。
However, when an organic solvent having a high boiling point as represented by this DOP is used, the organic molecules trapped in the filter 1 at the time of the inspection measurement come out from the filter 1 at the time of actual use after the inspection. It has recently been found that clean air is polluted, that is, TOC (Total Organic Carbon) is polluted.

【0006】[0006]

【発明が解決しようとする課題】上述したように検査後
の微粒子捕集体例えばフィルタを通したクリーンエアが
TOC汚染されるようなことがあると、半導体装置の製
造プロセスでこれに曝されたその半導体ウエファにTO
C汚染が転写され、不良品の発生、特性の低下を来す。
As described above, if the fine particle collector after the inspection, for example, the clean air that has passed through the filter is contaminated by TOC, it is exposed to the TOC in the manufacturing process of the semiconductor device. TO semiconductor wafer
C contamination is transferred, resulting in defective products and deterioration in characteristics.

【0007】従って、このようなTOC汚染が生じない
ような捕集検査を行うことが望まれている。
Therefore, it is desired to carry out a collection inspection so that such TOC contamination does not occur.

【0008】本発明は、このようなTOC汚染が生じな
いような捕集検査方法及び捕集検査装置を提供するもの
である。
The present invention provides a collection inspection method and a collection inspection device which do not cause such TOC contamination.

【0009】[0009]

【課題を解決するための手段】本発明は、主として大気
中に浮遊する微粒子を捕集する機能を有する微粒子捕集
体の捕集効率検査方法において、昇華性を有する物質の
微粒子をもって上記微粒子捕集体の捕集効率検査を行
う。
DISCLOSURE OF THE INVENTION The present invention mainly relates to a method for collecting efficiency of a fine particle collector having a function of collecting fine particles floating in the atmosphere, wherein the fine particle collector has fine particles of a sublimable substance. Perform a collection efficiency inspection of.

【0010】また、本発明においては、上述の方法にお
いて、その昇華性を有する物質として、硫黄を用いる。
Further, in the present invention, sulfur is used as the sublimable substance in the above-mentioned method.

【0011】更に、本発明においては、上述の方法にお
いて、その昇華性を有する物質として、硫黄のハロゲン
化物を原料ガスを解離させて発生させた硫黄を用いる。
Further, in the present invention, in the above-mentioned method, sulfur generated by dissociating a source gas from a sulfur halide is used as the sublimable substance.

【0012】また、本発明においては、その微粒子捕集
効果の検査を行う検査装置を、図1にその一例を示すよ
うに、昇華性を有する原料ガス源11と、そのプラズマ
発生部12と、被検査微粒子捕集体、例えばクリーンベ
ンチにおいてのフィルタ13と、プラズマ発生部12と
被検査微粒子捕集体13が配置される室14とを結ぶ通
路部15と、この通路部15に低温空気を供給する低温
空気供給源16と、この通路部15に高温空気を供給す
る高温空気供給源17とを設けた構成とする。
Further, in the present invention, an inspection apparatus for inspecting the effect of collecting fine particles is provided with a source gas source 11 having sublimability and a plasma generating section 12 thereof, as shown in an example in FIG. A particulate portion to be inspected, for example, a filter 13 in a clean bench, a passage portion 15 that connects the plasma generation unit 12 and a chamber 14 in which the inspected particulate collector 13 is arranged, and low temperature air is supplied to the passage portion 15. A low temperature air supply source 16 and a high temperature air supply source 17 for supplying high temperature air to the passage portion 15 are provided.

【0013】[0013]

【作用】上述の本発明による捕集検査方法及び捕集検査
装置によれば、その微粒子捕集効果の検査において、特
に昇華性を有する物質を用いたことによって、この検査
後において、この検査の行われた微粒子捕集体13に対
する熱処理を行う事によってこの微粒子捕集体13から
完全にその検査で用いた微粒子を消失させることができ
るので、この微粒子捕集体13を例えばクリーンベンチ
のフィルタとして用いた場合に逆にクリーンエアを汚染
させるような不都合を完全に排除することができる。
According to the collection inspection method and the collection inspection device according to the present invention described above, since the substance having the sublimation property is used in the inspection of the particulate collection effect, this inspection is performed after the inspection. Since the fine particles used for the inspection can be completely eliminated from the fine particle collector 13 by performing the heat treatment on the fine particle collector 13, the case where the fine particle collector 13 is used as a filter of a clean bench, for example, On the contrary, the inconvenience of contaminating the clean air can be completely eliminated.

【0014】[0014]

【実施例】本発明による捕集検査方法及び捕集検査装置
の実施例について説明する。
Embodiments of the collection inspection method and the collection inspection device according to the present invention will be described.

【0015】図1を参照して説明する。この装置は、前
述したように、昇華性を有する原料ガス源11と、その
プラズマ発生部12と、被検査微粒子捕集体、例えばク
リーンベンチにおいてのフィルタ13と、プラズマ発生
部12と被検査微粒子捕集体13が配置される室14と
を結ぶ通路部15と、この通路部15に低温空気を供給
する低温空気供給源16と、この通路部15に高温空気
を供給する高温空気供給源17とを設けた構成を有す
る。
Description will be made with reference to FIG. As described above, this apparatus includes a source gas source 11 having a sublimation property, a plasma generation part 12 thereof, an inspected fine particle collector, for example, a filter 13 in a clean bench, a plasma generation part 12 and an inspected fine particle trap. A passage portion 15 that connects the chamber 14 in which the assembly 13 is arranged, a low temperature air supply source 16 that supplies low temperature air to the passage portion 15, and a high temperature air supply source 17 that supplies high temperature air to the passage portion 15 are provided. It has the configuration provided.

【0016】原料ガス源11の原料ガスとしては、硫黄
のハロゲン化合物の、例えばS2 2 ,SF2 ,S
4 ,S210,S3 Cl2 ,S2 Cl2 ,S2 Br
2 ,SBr 2 ,S3 Br2 など分子内に多くの硫黄Sを
含み、プラズマ中で容易に解離して、遊離のSを生成し
得る原料ガスを用いる。
Sulfur is used as the source gas of the source gas source 11.
Halogen compounds such as S2 F 2 , SF2 , S
FFour, S2 FTen, S3Cl2 , S2 Cl2 , S2 Br
2 , SBr 2 , S3Br2 Much sulfur S in the molecule
Contained and easily dissociates in plasma to form free S
The raw material gas to be obtained is used.

【0017】そして、この原料ガスをプラズマ発生部1
2に送り込む。このプラズマ発生部12は、高周波発振
器18によって高周波電圧RFが与えられる対向電極1
2A及び12Bを有してなり、此処で原料ガスが解離さ
れてS粒子を遊離させる。この遊離したS粒子を、通路
部15に第1の開閉弁19を介して送り込む。
Then, the raw material gas is supplied to the plasma generator 1
Send to 2. The plasma generator 12 includes a counter electrode 1 to which a high frequency voltage RF is applied by a high frequency oscillator 18.
2A and 12B, in which the source gas is dissociated to release S particles. The liberated S particles are sent to the passage portion 15 via the first opening / closing valve 19.

【0018】一方、通路部15に、低温例えば室温以下
望ましくは0℃以下の低温空気供給源16からの清浄低
温空気を、第2の開閉弁20を介して通路15に供給す
る。
On the other hand, clean low-temperature air from a low-temperature air supply source 16 having a low temperature, for example, room temperature or lower, preferably 0 ° C. or lower, is supplied to the passage 15 through the second opening / closing valve 20.

【0019】更に、通路15に、高温例えば90℃以上
の高温空気供給源17からの清浄高温空気を、第3の開
閉弁21を介して通路部15に供給する。
Further, clean high temperature air from a high temperature air supply source 17 having a high temperature, for example, 90 ° C. or higher is supplied to the passage 15 through the third opening / closing valve 21 to the passage portion 15.

【0020】また、室14内の被検査捕集体例えばフィ
ルタ13より後段すなわち空気流の下流に、パーティク
ルカウンタ22を設ける。
Further, a particle counter 22 is provided at a stage subsequent to the sample to be inspected in the chamber 14, for example, the filter 13, that is, downstream of the air flow.

【0021】次に、この装置を用いて、被検査捕集体1
3の微粒子捕集効果の検査方法の手順について説明す
る。
Next, using this apparatus, the sample to be inspected 1 is collected.
The procedure of the method of inspecting the particulate collection effect of No. 3 will be described.

【0022】この場合、先ず、第1及び第2の開閉弁1
9及び20を開いて、通路にプラズマ発生部12からの
遊離されたS粒子を通路部15に供給すると共に、その
室14への途上において、低温空気を吹き込む。このよ
うにすると、S粒子は、低温で良く凝集することからこ
の低温空気の合流部で凝集して例えば数百Å〜数μmの
S微粒子となる。このとき、第3の開閉弁21は閉塞状
態にある。
In this case, first, the first and second on-off valves 1
9 and 20 are opened to supply the S particles released from the plasma generating portion 12 to the passage portion 15 and blow low temperature air on the way to the chamber 14. By doing so, the S particles agglomerate well at a low temperature, and thus agglomerate at the confluence of the low temperature air to become S particles having a particle size of, for example, several hundred Å to several μm. At this time, the third on-off valve 21 is in the closed state.

【0023】この状態で、室14内に配置された被検査
捕集体13にS微粒子を含む空気が送り込まれる。
In this state, the air containing S particles is sent to the inspected collecting body 13 arranged in the chamber 14.

【0024】そして、この被検査捕集体13を通過した
空気中のパーティクル数をパーティクルカウンタ22に
よってカウントする。
Then, the number of particles in the air that has passed through the inspected collector 13 is counted by the particle counter 22.

【0025】このようにして、被検査捕集体13の捕集
効率の検査が行われる。
In this way, the collection efficiency of the sample to be inspected 13 is inspected.

【0026】そして、この検査を終了して後、第1及び
第2の開閉弁19及び20を閉じ、第3の開閉弁21を
開放して、被検査捕集体13に高温の空気を送り込み、
被検査捕集体13に捕集されたS微粒子を、昇華させて
消失させる。
After this inspection is completed, the first and second opening / closing valves 19 and 20 are closed, the third opening / closing valve 21 is opened, and high temperature air is sent to the sample to be inspected 13.
The S fine particles collected in the inspected collecting body 13 are sublimated and disappear.

【0027】次に、本発明方法の実施例を挙げる。Next, examples of the method of the present invention will be described.

【0028】実施例1 上述した本発明方法においてプラズマ発生部12でS粒
子を発生させ、捕集効率を測定した。
Example 1 In the above-described method of the present invention, S particles were generated in the plasma generator 12 and the collection efficiency was measured.

【0029】この場合のプラズマ放電の条件は、 ガス;S2 2 ,流量30SCCM 圧力;40Pa RF;0.1W/cm2 とした。The conditions of the plasma discharge in this case were gas: S 2 F 2 , flow rate: 30 SCCM pressure: 40 Pa RF: 0.1 W / cm 2 .

【0030】パーティクル測定終了後、高温空気室供給
源17から100℃の加熱清浄空気を被検査捕集体(フ
ィルタ)13に送り込み、このフィルタ13で捕集され
たS粒子をすべて昇華させた。このフィルタ13をクリ
ーンベンチに用いたところ、TOC汚染はいうまでもな
く、S汚染も生じなかった。
After the particle measurement was completed, heated clean air at 100 ° C. was sent from the high temperature air chamber supply source 17 to the sample to be inspected (filter) 13 to sublimate all the S particles collected by the filter 13. When this filter 13 was used for a clean bench, S contamination did not occur, let alone TOC contamination.

【0031】実施例2 この実施例2では、S2 2 ガスにH2 ガスを加え、 H* +F* →HF↑ の反応を併起させることにより、よりS粒子の生成がお
こりやすくした。この場合の条件は、 ガス流量=S2 2 /H2 =30/10SCCM 圧力;40Pa RF;0.1W/cm2 とした。
Example 2 In Example 2, H 2 gas was added to S 2 F 2 gas to cause the reaction of H * + F * → HF ↑ to occur at the same time, thereby facilitating the generation of S particles. The conditions in this case were gas flow rate = S 2 F 2 / H 2 = 30/10 SCCM pressure; 40 Pa RF; 0.1 W / cm 2 .

【0032】実施形態は、実施例1と全く同じである
が、この実施例2では、よりS粒子が生成しやすくなる
効果があった。
The embodiment is exactly the same as the first embodiment, but the second embodiment has an effect that S particles are more easily generated.

【0033】実施例3 この実施例3では、S2 2 ガスにN2 ガスを加え、よ
り安定な結合を持つポリチアジルポリマー(SN)x
粒子を作り、捕集効率をテストした。 ガス流量;S2 2 /H2 =30/10SCCM 圧力;40Pa RF;0.1W/cm2 この場合は、昇華温度が約130℃であるため、高温空
気供給源から150℃の加熱空気をフィルタ13に送
り、捕集された(SN)x 粒子を昇華させた。
Example 3 In this Example 3, N 2 gas was added to S 2 F 2 gas to prepare particles of polythiazyl polymer (SN) x having a more stable bond, and the collection efficiency was tested. Gas flow rate; S 2 F 2 / H 2 = 30/10 SCCM pressure; 40 Pa RF; 0.1 W / cm 2 In this case, since the sublimation temperature is about 130 ° C., heated air of 150 ° C. is supplied from the high temperature air supply source. It was sent to the filter 13 to sublimate the collected (SN) x particles.

【0034】なお、本発明は上述の例に限られるもので
はなく、例えばマイクロ波放電によってS粒子を発生さ
せることもできるなど種々の実施態様をとることができ
る。
The present invention is not limited to the above-mentioned examples, and various embodiments such as S particles can be generated by microwave discharge can be adopted.

【0035】[0035]

【発明の効果】上述したように本発明によれば、不必要
に被検出捕集体13、すなわち例えばクリーンベンチの
フィルター汚染を惹起することなく、その捕集効率検査
を行うことができるので、この捕集体13を用いて半導
体製造のクリーンベンチに用いても、クリーンエアを逆
に汚染するような不都合が回避でき、このクリーンエア
の汚染による半導体装置製造の歩留まりの低下、特性の
低下、信頼性の低下等を回避できる。
As described above, according to the present invention, the trapping efficiency of the trapping target 13 to be detected can be carried out without causing contamination of the trapping target 13, that is, for example, the filter of the clean bench. Even if the collector 13 is used for a clean bench for semiconductor manufacturing, the inconvenience of contaminating clean air can be avoided, and the contamination of the clean air lowers the yield of semiconductor device manufacturing, the deterioration of characteristics, and the reliability. Can be avoided.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の装置の一例の構成図である。FIG. 1 is a configuration diagram of an example of an apparatus of the present invention.

【図2】従来装置の構成図である。FIG. 2 is a configuration diagram of a conventional device.

【符号の説明】[Explanation of symbols]

11 原料ガス源 12 プラズマ発生部 13 被検査捕集体 16 低温空気供給源 17 高温空気供給源 22 パーティクルカウンタ 11 Source Gas Source 12 Plasma Generating Part 13 Inspected Collector 16 Low Temperature Air Supply Source 17 High Temperature Air Supply Source 22 Particle Counter

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 主として大気中に浮遊する微粒子を捕集
する機能を有する微粒子捕集体の捕集効率検査方法にお
いて、 昇華性を有する物質の微粒子をもって上記微粒子捕集体
の捕集効率検査を行うことを特徴とする捕集検査方法。
1. A collection efficiency inspection method of a fine particle collector mainly having a function of collecting fine particles floating in the atmosphere, wherein the fine particle collector having fine particles of a sublimable substance is subjected to the collection efficiency inspection of the fine particle collector. A collection inspection method characterized by.
【請求項2】 上記昇華性を有する物質が、硫黄である
ことを特徴とする請求項1に記載の捕集検査方法。
2. The collection inspection method according to claim 1, wherein the substance having sublimability is sulfur.
【請求項3】 上記昇華性を有する物質が、硫黄のハロ
ゲン化物を原料ガスとしてこれを解離させて発生させた
硫黄であることを特徴とする請求項1に記載の捕集検査
方法。
3. The collection inspection method according to claim 1, wherein the substance having sublimability is sulfur generated by dissociating a sulfur halide as a raw material gas and dissociating the same.
【請求項4】 昇華性を有する原料ガス源と、 そのプラズマ発生部と、 被検査微粒子捕集体と、 上記プラズマ発生部と、上記被検査微粒子捕集体が配置
された室とを連通する通路部と、 該通路部に低温空気を供給する低温空気供給源と、 該通路部に高温空気を供給する高温空気供給源とを具備
して成ることを特徴とする捕集検査装置。
4. A sublimation source gas source, a plasma generation part thereof, an inspected fine particle collector, a passage part communicating with the plasma generation part and a chamber in which the inspected fine particle collector is arranged. And a low temperature air supply source for supplying low temperature air to the passage portion, and a high temperature air supply source for supplying high temperature air to the passage portion.
JP27456392A 1992-10-13 1992-10-13 Collection inspection method and collection inspection device Expired - Fee Related JP3218729B2 (en)

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Application Number Priority Date Filing Date Title
JP27456392A JP3218729B2 (en) 1992-10-13 1992-10-13 Collection inspection method and collection inspection device

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JPH06123693A true JPH06123693A (en) 1994-05-06
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060329A (en) * 1997-03-27 2000-05-09 Fujitsu Limited Method for plasma treatment and apparatus for plasma treatment
CN104964907A (en) * 2015-07-10 2015-10-07 苏州华达仪器设备有限公司 Simulation test system for filtering efficiency of filtering materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060329A (en) * 1997-03-27 2000-05-09 Fujitsu Limited Method for plasma treatment and apparatus for plasma treatment
CN104964907A (en) * 2015-07-10 2015-10-07 苏州华达仪器设备有限公司 Simulation test system for filtering efficiency of filtering materials

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