JPH06108240A - Sputtering source - Google Patents

Abstract

PURPOSE:To constitute a plate-like target to be detachable by separating it into the part subjected to erosion and the outside peripheral part. CONSTITUTION:The part subjected to erosion of a plate-like target 3 is constituted of a support ring 27, and by fixing this support ring and a backing plate 4 by a mechanical mechanism, for instance, a screw 25, the plate-like target 3 installed in the support ring is allowed to adhere tightly to the backing plate 4. In such a way, the utilization efficiency of the plate-like target 3 is improved, and also, the cooling efficiency is raised.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a sputtering source used in a sputtering apparatus, particularly a planar type magnetron sputtering apparatus.

[0002]

2. Description of the Related Art A compact disc (hereinafter referred to as a CD) is used as a means for storing a large amount of digitized audio signals and image information.
Has been widely used recently, and the function of the CD will be described. "1" is placed on the surface of a transparent synthetic resin substrate (hereinafter referred to as substrate) such as polycarbonate.
A small unevenness called a pit is provided according to the digital information of "0", and an aluminum thin film having a high light reflectance is formed on the surface by a sputtering method, and then the presence or absence of this unevenness is compared with a laser beam for recording. Can read information. Further, since a thin film is formed on one substrate by a sputtering method in a relatively short time, an apparatus which can be continuously formed on a large number of substrates is also used.

In the planar magnetron sputtering apparatus used as this sputtering apparatus, a depressurizing mechanism is provided, and a gas required for discharge can be introduced, and an airtight film forming chamber 1 is provided. Parts necessary for the sputtering process are installed in the film forming chamber 1. As shown in FIG. 1, the sputtering source 3 is arranged in the film forming chamber 1 so as to face the substrate 2 made of metal, ceramics, plastic, or the like. . The plate-shaped target 3 constituting the sputtering source 3 is fixed to a backing plate 4 which can be cooled, and highly efficient sputtering is performed by magnetic lines of force generated from a magnetic field device 5 arranged on the back side thereof.

[0004] magnetic field device 5 for this purpose, generates a ring-shaped magnetic field is placed inside the magnet 5 _a and the outer magnet 5 _b surrounding it in parallel form. On the other hand, since the ring-shaped anode 6 is arranged around the plate-shaped target 3 with a slight distance and DC or high-frequency power is supplied between the two, a discharge confined by the magnetic field is generated.

In this discharge, sputtering is performed in an inert atmosphere such as argon gas supplied from the gas inlet 7. At this time, the exhaust gas and the excess inert gas are exhausted from the exhaust pipe 22.

The planar type magnetron sputtering apparatus shown in FIG. 1 is equipped with a transfer mechanism that enables continuous processing, and FIG. 2 shows a configuration diagram of the transfer mechanism. That is, the substrates 2 successively transported by the external transport mechanism 9 such as a belt conveyor rotate around the axis and are further attracted to the adsorption pad 11 attached to the handling mechanism 10 which is vertically movable. It is conveyed to the inside 12 of the apparatus.

In the inside 12 of the sputtering apparatus, the same as the handling mechanism 10 is rotated around the axis and is placed on the transport table 13 which is vertically movable, and then a predetermined step is performed by the sputtering apparatus shown in FIG. That is, the substrate 2 carried to the lower part of the film forming chamber 1 by the carrying table 13 is pushed up by the pusher 14. A mask 15 is provided in the lower part of the film forming chamber 1 so as to form a part thereof for depositing a thin film while leaving the central part and the outer peripheral part of the substrate 2, and the end face of the mask 15 is operated by the operation of the pusher 14. The substrate 2 is closely attached.

[0008] The film formation chamber 1 or sputtering region, deposition shield 16 _a, 16 _b and the mask 15 inscribed
And the target 3 is arrange | positioned, and the target 3 adheres tightly to the backing plate 4 and fixes it. Inside the backing plate 4, the inside of the water supply pipe is arranged in a cavity, and a cooling mechanism for cooling the temperature to the above temperature by the cooling medium flowing therethrough is provided side by side, so that 50 W / c to be injected onto the surface of the target 3
Cool a considerable amount of heat generated by a discharge power of about m ² .
As a result, the surface of the target 3 can be suppressed to about 100 ° C., which helps prevent the formation of a gap between the target 3 and the backing plate 4 due to the deformation of the plate-shaped target 3. The inside of the water supply pipe is arranged in the cavity, and is cooled to the above temperature by the refrigerant flowing therein.

The target 3 and the backing plate 4 are fixed by a mechanical means such as a screw 17 inserted from the film forming chamber 1 side.

[0010]

As described above, when the plate-shaped target 3 and the backing plate 4 are fixed, in addition to the mechanical fixing method as described above, a fixing means such as solder is adopted to obtain a plate. A method of increasing the cooling efficiency of the target 3 is adopted. Therefore, when a mechanical fixing method is used for the outer peripheral portion of the plate-shaped target 3, it is common to install bolts or the like at the center of the plate-shaped target, the outer peripheral portion, and other non-eroded portions.

The present invention has been made under such circumstances, and an object thereof is to provide a novel sputtering source.

[0012]

[Means for Solving the Problems] A backing plate that can be cooled, a plate-shaped target that is placed in close contact with the backing plate, and a plate-shaped target that is located around the plate-shaped target and is mechanically fixed to the backing plate. The sputtering source according to the present invention is characterized in that the plate-shaped target is indirectly attached to the backing plate through the support ring.

[0013]

The function of the sputtering source according to the present invention is
A method of separating the part to be sewn from the outer peripheral part is adopted. That is, the target support ring is installed at a position corresponding to the outer peripheral portion of the plate-shaped target, and a mechanical fixing mechanism such as a screw is provided here to ensure close contact between the backing plate and the plate-shaped target. , Improve the utilization efficiency of the plate-shaped target.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described with reference to FIGS. 3 is a sectional view showing an outline of a planar type magnetron sputtering apparatus equipped with a sputtering source of the present invention, FIG. 4 is an enlarged sectional view of a target and a target support ring, and FIG. 5 is a sectional view of the target and the backing plate. Other fixing methods are shown, and the numbers in these figures carry over those used in the prior art section.

In addition to installing the magnetic field device 5, the plate-shaped target 3 and the substrate 2 required for sputtering as shown in FIG. 3, it is clarified in FIG. 1 as a prior art to enable continuous processing. A carrier device is installed, but the description is omitted to avoid duplication. The most important film forming chamber 1 is a plate-shaped target 3 and a substrate 2 made of polycarbonate, which is opposed to the plate-shaped target 3.
It is constituted by an adhesion preventive shield 16 also serving as an anode, a mask 15, and the like.

A backing plate 4 is mounted on the plate-shaped target 3 to which a discharge power of about 50 W / cm ² is applied, and a cavity (not shown) is provided inside the plate-shaped target 3.
Is provided and connected to the water supply pipe 8. Thereby, the cooling water is circulated to maintain the surface temperature of the plate-shaped target 3 at about 100 ° C.

As a result, it is possible to prevent the plate-shaped target 3 from being deformed and prevent a gap from being formed between the plate-shaped target 3 and the backing plate 4. The fixing of both will be described later with reference to FIG. 7.

The Alcon gas necessary for the sputtering process is supplied from the introduction unit 7, and then sputtering power is supplied to cause argon gas ions to collide with the target surface to sputter the target material, for example, Al, and Al is deposited on the substrate 2. To do. To exhaust gas and the like generated by such a sputtering process, the exhaust port 24 provided in the outer peripheral mask _15b is used.

The plate-shaped target 3 and the backing plate 4 which constitute the sputtering source according to the present invention are fixed by
As is apparent from FIG. 4, the support ring 27 is attached to the backing plate 4 by a mechanical mechanism such as a screw 25,
The plate-shaped target 3 arranged in the support ring 27 is also fixed. Further, a discontinuous portion 26 is formed on the side surface which is the boundary surface between the plate-shaped target 3 and the support ring 27. The outer diameter of the plate target 3 is 160 mm.
~ 180mm thickness about 20mm, support ring 2
4 has an outer diameter of about 232 mm and an inner diameter of 160 mm to 180 mm
And the thickness is approximately 10 mm.

FIG. 5 clarifies another example of fixing the plate-shaped target 3 and the backing plate 4. For example, there is a method of using the clamp 28 at both ends. It is possible to use means such as fitting a ring on the outer side and fixing it by utilizing thermal expansion, or installing a screw or the like here. It is also possible to integrate the support ring 27 and the clamp 28.

[0021]

As described above, in the sputtering source according to the present invention in which there is no solder or the like between the backing plate 4 and the plate-shaped target 3, the plate-shaped target 3 can be replaced very easily and the utilization efficiency is improved. . Furthermore, since there is a discontinuous portion on both sides, since the adhesive force is obtained on average by performing the function of dividing the stress that occurs in each side, a large contact area can be taken, so cooling efficiency should be increased. You can

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a main part of a conventional sputtering device.

FIG. 2 is a sectional view showing a part of the transport mechanism in FIG.

FIG. 3 is a sectional view showing a main part of a sputtering apparatus to which a sputtering source according to the present invention is applied.

4 is a sectional view showing a fixed state of a plate-shaped target and a backing plate of the sputtering apparatus of FIG.

5 is a cross-sectional view showing another fixed state of the plate-shaped target and the backing plate of the sputtering apparatus of FIG.

[Explanation of symbols]

 1: film forming chamber, 2: substrate, 3: plate-shaped target, 4: backing plate, 5: magnetic field device, 6: anode, 27: support ring, 25: screw, 26: discontinuous portion, 28: clamp.

Claims (1)

[Claims] 1. A coolable backing plate, a plate-like target placed in close contact with the backing plate, and a support ring located around the plate-like target and mechanically fixing the plate-like target to the backing plate. The sputtering source, characterized in that the plate-shaped target is indirectly attached to the backing plate through the support ring.