JPH06104460A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPH06104460A JPH06104460A JP4251488A JP25148892A JPH06104460A JP H06104460 A JPH06104460 A JP H06104460A JP 4251488 A JP4251488 A JP 4251488A JP 25148892 A JP25148892 A JP 25148892A JP H06104460 A JPH06104460 A JP H06104460A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- photodetector
- pin photodiode
- signal processing
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Light Receiving Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光検出装置に係り、特に
１つの信号処理ＩＣと複数の受光素子とを一体化してな
る光検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodetector, and more particularly to a photodetector in which one signal processing IC and a plurality of light receiving elements are integrated.
【０００２】[0002]
【従来の技術】光信号を電気信号に変える受光素子とし
てフォトダイオードが知られている。2. Description of the Related Art A photodiode is known as a light receiving element for converting an optical signal into an electric signal.
【０００３】光による電子正孔対（キャリア）の発生領
域を低不純物とするｐｉｎ構造を有するｐｉｎフォトダ
イオード等の受光素子モジュール（光検出装置）は、従
来ｐｉｎフォトダイオード等の受光素子１個とそれに対
応する信号処理ＩＣ１個で通常構成されている。A light receiving element module (light detecting device) such as a pin photodiode having a pin structure in which a generation region of electron-hole pairs (carriers) by light has a low impurity is conventionally provided with one light receiving element such as a pin photodiode. It is usually composed of one signal processing IC corresponding thereto.
【０００４】受光感度を上げる一つの手段として、受光
面積を増大させることが考えられる。この受光面積を増
大させる場合、従来、受光素子ピンフォトダイオードの
チップサイズを大きくしていた。It is conceivable to increase the light receiving area as one means for increasing the light receiving sensitivity. In order to increase the light receiving area, the chip size of the light receiving element pin photodiode has conventionally been increased.
【０００５】[0005]
【発明が解決しようとする課題】上記の如く、受光感度
を上げるためにチップサイズの大きなピンフォトダイオ
ード等を製造すると収率、歩留り等が悪化してコストが
増大した。しかも、そのチップの取り扱いが容易でなか
った。ピンフォトダイオードのチップ形状はほとんど正
方形であり、１個の信号処理ＩＣを有した受光部が極端
な横長な装置や特殊な形状の装置は、これまで製造され
ていなかった。As described above, when a pin photodiode or the like having a large chip size is manufactured in order to increase the light receiving sensitivity, the yield, yield, etc. are deteriorated and the cost is increased. Moreover, handling of the chip was not easy. The pin photodiode has almost a square chip shape, and a device having an extremely long light receiving portion having a single signal processing IC and a device having a special shape have not been manufactured so far.
【０００６】そこで、本発明は上記欠点を鑑み、収率、
歩留り等を悪化させずに受光感度を向上させた光検出装
置を提供することを目的とする。In view of the above-mentioned drawbacks, the present invention has the following advantages:
An object of the present invention is to provide a photodetector with improved light receiving sensitivity without deteriorating the yield and the like.
【０００７】[0007]
【課題を解決するための手段】上記課題は本発明によれ
ば、受光素子と、該受光素子で受光した信号を処理する
信号処理ＩＣを有する光検出装置において、複数の前記
受光素子を１個の前記信号処理ＩＣで処理するようにし
たことを特徴とする光検出装置によって解決される。According to the present invention, there is provided a photodetector having a light receiving element and a signal processing IC for processing a signal received by the light receiving element. This is solved by a photodetector characterized in that the signal processing IC is used for processing.
【０００８】[0008]
【作用】本発明によれば、受光素子１ａを複数個配設す
るため、受光面積を増加させることができ、感度を向上
させることができる。しかも、それぞれ１個の受光素子
１ａは、従来からよく用いられているサイズのチップを
有する受光素子とすることができるため、コスト的にも
高価にならない。また、このように複数個の受光素子１
ａで受光した光信号を処理する信号処理ＩＣは１個であ
り、面積もわずかで足りる。本発明では、受光素子１ａ
としてｐｉｎフォトダイオードベアチップが好ましく用
いられる。According to the present invention, since a plurality of light receiving elements 1a are provided, the light receiving area can be increased and the sensitivity can be improved. Moreover, since each one light receiving element 1a can be a light receiving element having a chip of a size that has been often used conventionally, the cost does not increase. In addition, as described above, a plurality of light receiving elements 1
The number of signal processing ICs for processing the optical signal received by a is one, and the area is small. In the present invention, the light receiving element 1a
A pin photodiode bare chip is preferably used as the above.
【０００９】また、本発明では複数個の受光素子１ａを
適時並列接続したり、直列接続したりすることが可能で
あり、また配設用基板３３の表側、及び裏側の両側に配
設したり、極端な横長形状やその他の特殊な形状に配設
することも可能である。Further, in the present invention, a plurality of light receiving elements 1a can be connected in parallel or in series at appropriate times, and can be arranged on both the front side and the back side of the mounting substrate 33. It is also possible to arrange in an extremely horizontal shape or other special shape.
【００１０】[0010]
【実施例】以下、本発明の実施例を図面を参照しながら
説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１１】図１は本発明の一実施例を示すブロック図
であり、図２は図１を実現するためのパターン模式図で
ある。FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a schematic pattern diagram for realizing FIG.
【００１２】図１及び図２に示すように、本発明に係る
光検出装置は、並列に接続された２２個のｐｉｎフォト
ダイオードベアチップ１ａを有するｐｉｎフォトダイオ
ード部１と、１個のＩＣ部２から主に構成されている。
図１に特に示すようにＩＣ部２は、ＡＢＬＣ（オートバ
イアスレベルコントローラ）３，ヘッドアンプ４，リミ
ッターアンプ５，ＢＰＦ６，検出器及び比較器７，積分
器８及びヒステリシス比較器９を有し、図２にそれらの
チップ部品マウント部を１０で示す。また、図２で電流
あるいは電圧を印加する部位を端子１１ａ，１１ｂで示
す。As shown in FIGS. 1 and 2, the photodetector according to the present invention has a pin photodiode part 1 having 22 pin photodiode bare chips 1a connected in parallel, and one IC part 2. It is mainly composed of.
As specifically shown in FIG. 1, the IC unit 2 has an ABLC (auto bias level controller) 3, a head amplifier 4, a limiter amplifier 5, a BPF 6, a detector and a comparator 7, an integrator 8 and a hysteresis comparator 9. FIG. 2 shows these chip component mount portions by 10. In addition, the portions to which a current or a voltage is applied are indicated by terminals 11a and 11b in FIG.
【００１３】本発明の上記実施例において、２２個のｐ
ｉｎフォトダイオードベアチップ１ａすなわち受光素子
が横長に配置されており、１個の信号処理ＩＣ部２を一
体化して形成されている。In the above embodiment of the invention, 22 p
The in-photodiode bare chip 1a, that is, the light-receiving element is arranged in a horizontally long shape, and is formed by integrating one signal processing IC unit 2.
【００１４】本実施例の完成品分解斜視図である図３に
示すように、ＩＣ部と２２個のｐｉｎフォトダイオード
ベアチップは同一の樹脂内に収容されている。この樹脂
は、通常用いられるエポキシ系樹脂１３であり、可視光
を遮断するフィルター（可視光カットフィルター）がそ
の樹脂内に入れてある。なお、１４は本装置の係止用の
穴である。As shown in FIG. 3, which is an exploded perspective view of the finished product of this embodiment, the IC section and the 22 pin photodiode bare chips are housed in the same resin. This resin is an epoxy resin 13 that is usually used, and a filter that blocks visible light (visible light cut filter) is put in the resin. Reference numeral 14 is a hole for locking this device.
【００１５】図３（ｂ）は受光部を開口する窓を有する
カバー１６であり、レーザー等の光をその窓を介して検
出する。FIG. 3B shows a cover 16 having a window that opens the light receiving portion, and detects light from a laser or the like through the window.
【００１６】本実施例は、受光部（受光素子）が横長に
形成されているため、図４に模式的に示すように高速で
移動する高速移動物体２０に本光検出装置２１を取り付
け、その移動物体２０の検出に用いられる。すなわち、
例えばレーザー発振器等の発光装置２２からレーザーを
集光ビーム状にして高速移動物体２０に発すると、本セ
ンサ（光検出装置）２１はフォーカルプレーンシャッタ
ー１／１０００秒に相当する速さの物体をも検知するこ
とができる。In the present embodiment, since the light receiving portion (light receiving element) is formed horizontally long, the light detecting device 21 is attached to the high speed moving object 20 which moves at high speed as schematically shown in FIG. It is used to detect the moving object 20. That is,
For example, when a laser beam is emitted from a light emitting device 22 such as a laser oscillator to a high-speed moving object 20, the sensor (light detection device) 21 detects an object having a speed equivalent to 1/1000 second of a focal plane shutter. Can be detected.
【００１７】なお、本実施例では、ｐｉｎフォトダイオ
ードのチップサイズを２．７ｍｍ角とした。このように
して、通常のリモコン信号を受光した場合８０〜１００
ｍの動作距離を得ることができた。In the present embodiment, the pin size of the pin photodiode is 2.7 mm square. In this way, when a normal remote control signal is received, 80-100
It was possible to obtain an operating distance of m.
【００１８】次に、受光素子ｐｉｎフォトダイオードを
直列接続した実施例をブロック図である図５を用いて説
明する。Next, an embodiment in which light receiving elements pin photodiodes are connected in series will be described with reference to the block diagram of FIG.
【００１９】図５に示すように、ｐｉｎフォトダイオー
ドベアチップ１ａが１０個（図では簡略化されている）
直列に接続されており、反転アンプ（インバージョンア
ンプ）２４，バッファアンプ２５が１つの信号処理ＩＣ
で構成されており、１０個のｐｉｎフォトダイオード部
１と一体化形成されている。As shown in FIG. 5, ten pin photodiode bare chips 1a (simplified in the figure)
A signal processing IC that is connected in series and has an inverting amplifier (inversion amplifier) 24 and a buffer amplifier 25 as one.
And is formed integrally with ten pin photodiode parts 1.
【００２０】本直列接続方式の光検出装置では、ｐｉｎ
フォトダイオードと並列的に配置された抵抗Ｒは、直列
接続時、その値を数ＭΩ〜数十ＭΩまでの間の良好な条
件に選定される。ｐｉｎフォトダイオードの両端抵抗Ｒ
１，Ｒ２によりｐｉｎフォトダイオードに流す電流を制
限したり、入力の調整がなされる。電源電圧Ｖｃｃは、
２０〜８０Ｖ（直流）程度で用いる。このようにｐｉｎ
フォトダイオードベアチップ１ａを直列接続した場合、
従来の構成の受光面積が大きな１個の場合より高い電圧
をかけることができ、且つ１個当りの受光面積を小さく
できるため周波数特性を改善することができる。In the photodetector of this series connection system, the pin
The resistance R arranged in parallel with the photodiode is selected such that its value is in a good condition between several MΩ and several tens MΩ when connected in series. Both end resistance R of pin photodiode
A current flowing through the pin photodiode is restricted by 1 and R2, and input is adjusted. The power supply voltage Vcc is
Used at about 20 to 80 V (DC). Like this
When the photodiode bare chips 1a are connected in series,
Since a higher voltage can be applied and a light receiving area per one can be made smaller than that in the case where one light receiving area is large in the conventional structure, the frequency characteristic can be improved.
【００２１】次に、ｐｉｎフォトダイオードを表側と裏
側にそれぞれ例えば１個づつ取付け、１個のＩＣを表側
に取り付けた本発明の他の実施例を図６（ａ），（ｂ）
及び図７を用いて説明する。Next, another embodiment of the present invention in which one pin photodiode is attached to the front side and one pin photodiode is attached to the back side, and one IC is attached to the front side are shown in FIGS. 6 (a) and 6 (b).
And FIG. 7 will be described.
【００２２】図６（ａ）及び（ｂ）に示すように、本実
施例の光検出装置の基板表側にｐｉｎフォトダイオード
部３１ａ及びＩＣ部３２が設けられており、基板の裏側
にｐｉｎフォトダイオード部３１ｂが設けられている。
図６の縦断面模式図である図７に基板３３の表側及び裏
側にｐｉｎフォトダイオード部３１ａ，３１ｂ、ＩＣ部
３２の配置がより明確に示されている。ＩＣ３２とｐｉ
ｎフォトダイオード部３１ａ，３１ｂとの接続はＡｕ
（金）ワイヤ３４によってなされており、その両面には
通常の可視光カットフィルター入りエポキシ樹脂３５に
より被覆されている。図中３６はリードを示す。このよ
うに受光素子を基板の裏表の両面に設けることにより受
光の指向性が向上する。As shown in FIGS. 6A and 6B, a pin photodiode portion 31a and an IC portion 32 are provided on the front surface side of the substrate of the photodetector of this embodiment, and a pin photodiode portion is provided on the back side of the substrate. The part 31b is provided.
FIG. 7 which is a schematic vertical cross-sectional view of FIG. 6 more clearly shows the arrangement of the pin photodiode portions 31a and 31b and the IC portion 32 on the front side and the back side of the substrate 33. IC32 and pi
The connection with the n photodiode portions 31a and 31b is Au.
It is made of a (gold) wire 34, and both surfaces thereof are covered with a normal epoxy resin 35 containing a visible light cut filter. In the figure, 36 indicates a lead. By providing the light receiving elements on both the front and back surfaces of the substrate in this manner, the directivity of light reception is improved.
【００２３】[0023]
【発明の効果】以上説明したように、本発明によれば現
在使用されている低コストサイズ（２〜５ｍｍ角）のチ
ップを用いて大きな受光面積を有し、指向性の高い光検
出装置を得ることができる。しかも複数の受光素子を横
長配置に構成して、高速移動物体の移動方向に沿って本
発明の光検出器を該高速移動物体に取り付ければ高速移
動物体の検出が可能となる。As described above, according to the present invention, a photodetection device having a large light receiving area and a high directivity can be provided by using a currently used low-cost chip (2 to 5 mm square). Obtainable. Moreover, if a plurality of light receiving elements are arranged in a laterally long direction and the photodetector of the present invention is attached to the high speed moving object along the moving direction of the high speed moving object, the high speed moving object can be detected.
【図１】本発明の一実施例（ｐｉｎフォトダイオード並
列接続）を示すブロック図である。FIG. 1 is a block diagram showing an embodiment (pin photodiode parallel connection) of the present invention.
【図２】図１を実現するためのパターン模式図である。FIG. 2 is a schematic pattern diagram for realizing FIG.
【図３】本実施例の完成品分解斜視図である。FIG. 3 is an exploded perspective view of a completed product of this embodiment.
【図４】高速移動物体に本実施例の光検出装置を取り付
けた状態を示す模式図である。FIG. 4 is a schematic diagram showing a state in which the photodetector of this embodiment is attached to a high-speed moving object.
【図５】本発明の一実施例（ｐｉｎフォトダイオード直
列接続）を示すブロック図である。FIG. 5 is a block diagram showing an embodiment (pin photodiode series connection) of the present invention.
【図６】本発明の一実施例（ｐｉｎフォトダイオード裏
表接続）を説明するためのパターン図である。FIG. 6 is a pattern diagram for explaining one embodiment of the present invention (pin photodiode front and back connection).
【図７】図６に示した実施例の縦断面構造を説明するた
めの模式図である。FIG. 7 is a schematic diagram for explaining the vertical cross-sectional structure of the embodiment shown in FIG.
１，３１ａ，３１ｂ ｐｉｎフォトダイオード部 １ａ ｐｉｎフォトダイオードベアチップ ２，３２ ＩＣ部 ３ ＡＢＬＣ（オートバイアスレベルコントローラ） ４ ヘッドアンプ ５ リミッターアンプ ６ ＢＰＦ ７ 検出器及び比較器 ８ 積分器 ９ ヒステリシス比較器 １０ チップ部品マウント部 １１ａ，１１ｂ 端子 １３ エポキシ系樹脂 １４ 穴 １６ カバー ２０ 高速移動物体 ２１ 光検出装置 ２２ 発光装置 ２４ 反転アンプ ２５ バッファアンプ ３３ 基板 ３４ Ａｕワイヤ ３５ エポキシ系樹脂 ３６ リード 1, 31a, 31b pin photodiode part 1a pin photodiode bare chip 2,32 IC part 3 ABLC (auto bias level controller) 4 head amplifier 5 limiter amplifier 6 BPF 7 detector and comparator 8 integrator 9 hysteresis comparator 10 chip Component mounting part 11a, 11b Terminal 13 Epoxy resin 14 Hole 16 Cover 20 High speed moving object 21 Photodetector 22 Light emitting device 24 Inverting amplifier 25 Buffer amplifier 33 Board 34 Au wire 35 Epoxy resin 36 Lead
Claims (7)
を処理する信号処理ＩＣを有する光検出装置において、 複数の前記受光素子を１個の前記信号処理ＩＣで処理す
るようにしたことを特徴とする光検出装置。1. A photodetector having a light receiving element and a signal processing IC for processing a signal received by the light receiving element, wherein a plurality of the light receiving elements are processed by one signal processing IC. A characteristic photodetector.
たことを特徴とする請求項１記載の光検出装置。2. The photodetector according to claim 1, wherein the plurality of light receiving elements are connected and arranged in parallel.
置したことを特徴とする請求項２記載の光検出装置。3. The photodetector according to claim 2, wherein the plurality of light receiving elements are linearly arranged in a line.
方向に沿うように取り付けることを特徴とする請求項３
記載の光検出装置。4. The high-speed moving object is attached along the moving direction of the high-speed moving object.
The photodetector described.
を特徴とする請求項１記載の光検出装置。5. The photodetector according to claim 1, wherein the light receiving elements are connected and arranged in series.
の表側及び裏側の両側に配設したことを特徴とする請求
項１記載の光検出装置。6. The photodetector according to claim 1, wherein the light receiving elements are arranged on both front and back sides of the light receiving element mounting substrate.
処理ＩＣにベアチップを使用したことを特徴とする請求
項１記載の光検出装置。7. The photodetector according to claim 1, wherein bare chips are used for the plurality of light receiving elements and the one signal processing IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4251488A JPH06104460A (en) | 1992-09-21 | 1992-09-21 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4251488A JPH06104460A (en) | 1992-09-21 | 1992-09-21 | Photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06104460A true JPH06104460A (en) | 1994-04-15 |
Family
ID=17223552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4251488A Pending JPH06104460A (en) | 1992-09-21 | 1992-09-21 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06104460A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007087991A (en) * | 2005-09-20 | 2007-04-05 | Rohm Co Ltd | Light receiving module |
| US7298130B2 (en) | 2001-05-17 | 2007-11-20 | Matsushita Electric Industrial Co., Ltd. | Signal detector |
| JP2011503830A (en) * | 2006-12-05 | 2011-01-27 | 韓國電子通信研究院 | Multiple aperture surface photodetector and optical signal detection circuit having the photodetector |
-
1992
- 1992-09-21 JP JP4251488A patent/JPH06104460A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7298130B2 (en) | 2001-05-17 | 2007-11-20 | Matsushita Electric Industrial Co., Ltd. | Signal detector |
| JP2007087991A (en) * | 2005-09-20 | 2007-04-05 | Rohm Co Ltd | Light receiving module |
| JP2011503830A (en) * | 2006-12-05 | 2011-01-27 | 韓國電子通信研究院 | Multiple aperture surface photodetector and optical signal detection circuit having the photodetector |
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