JPH06104248A - Heat treatment apparatus - Google Patents

Abstract

PURPOSE:To provide a heat treatment apparatus wherein it is not required to install a temperature sensor for safety device use near a hot plate, it can easily execute the operating test or the like of a safety device, it surely prevents an excess temperature rise under various heat-dissipating conditions and it can enhance safety. CONSTITUTION:An overheat control device 11 reads out a proper supply of power from a memory 13 on the basis of information on a set temperature and on a heat-dissipating condition from a main control device 12. The proper supply of power is compared with electric power actually supplied to a heater 5. When excessive electric power is supplied to the heater 5, a breaker 14 is actuated and the supply of the electric power to the heater 5 is cut off.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a heat treatment apparatus.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device manufacturing process or the like, a heat treatment apparatus for heating an object to be processed such as a semiconductor wafer or a glass substrate for an LCD to a predetermined temperature for processing is used. In such a heat treatment apparatus, a temperature detection signal from a temperature sensor is input to a control device such as a computer, and the control device controls the electric power supplied to the heater to set the hot plate to a predetermined temperature. ing.

Further, in order to prevent an accident such as an excessive temperature rise when such a control device failure occurs, the power supply line for supplying electric power to the heater is kept at a predetermined temperature or higher. A so-called thermal fuse or the like, which blows out in such a case, is provided to ensure safety.

[0004]

However, in the conventional heat treatment apparatus described above in which the temperature fuse is used to prevent excessive temperature rise, for example, when a test for confirming the operation of the temperature fuse is performed, the temperature fuse is If the thermal fuse works normally, it will blow out, so it is impossible to actually perform an operation test, and once the thermal fuse has blown out, it will take time to replace and restore it. is there.

Further, since heat radiation conditions such as ambient temperature differ depending on the use conditions, it is difficult to select an appropriate temperature fuse.
There is a problem that the thermal fuse may be blown out during normal operation, or conversely, the thermal fuse may not be easily blown out at the time of abnormal occurrence, which may impair safety.

On the other hand, if a temperature sensor for a safety device is provided in addition to the temperature sensor for temperature control described above and the power source or the like is shut off by a signal from the temperature sensor for the safety device, the vicinity of the heating plate is obtained. It is necessary to provide such a temperature sensor for the safety device at a position where the temperature of the hot plate is accurately reflected, and the setting location and installation space of the temperature sensor for the safety device. There is a problem in that it must be secured.

The present invention has been made in response to such a conventional situation, and it is not necessary to provide a temperature sensor for a safety device in the vicinity of the heating plate, and an operation test of the safety device can be easily performed. It is an object of the present invention to provide a heat treatment apparatus capable of achieving the above, and capable of reliably preventing excessive temperature rise even under various heat dissipation conditions and improving safety.

[0008]

That is, the heat treatment apparatus of the present invention comprises a heater for heating the hot plate and a control mechanism for supplying electric power to the heater to heat the hot plate to a predetermined set temperature. In the heat treatment apparatus described above, a detection unit that detects the amount of power supplied to the heater, a storage unit that stores an appropriate amount of power supplied to the heater that is determined by the set temperature of the hot plate and heat dissipation conditions, and the setting of the hot plate. Input means for inputting temperature and heat radiation conditions, and the appropriate power supply amount in the storage means is read in response to the input from the input means, and the detection result by the detection means exceeds the appropriate power supply amount. In this case, a means for controlling, for example, cutting off the power supply to the heater is provided.

[0009]

In the heat treatment apparatus of the present invention having the above structure, the proper power supply amount to the heater, which is determined by the set temperature of the hot plate and the heat radiation condition, is compared with the actual power supply amount to the heater. When the electric power is actually supplied to the heater in excess of the amount, the electric power supply to the heater is controlled, for example, cut off.

Therefore, it is not necessary to provide a temperature sensor for the safety device in the vicinity of the hot plate, and a power supply amount measuring mechanism provided at an appropriate portion between the heater and the power supply device and provided at an arbitrary location. The safety device can be configured by an electronic control device such as a computer. In addition, the operation test of the safety device can be easily performed, and the recovery after the operation of the safety device can be easily performed. Furthermore, it is possible to reliably prevent an excessive temperature rise in accordance with various heat dissipation conditions such as ambient temperature and the set temperature, and it is possible to improve safety.

[0011]

EXAMPLES Examples in which the present invention is applied to a heat treatment apparatus for heating a semiconductor substrate, for example, a semiconductor wafer, will be described below.
A description will be given with reference to the drawings.

As shown in FIG. 1, a heating device 1 which is a heat treatment device is composed of an upper half part 2a and a lower half part 2b, and these upper half part 2a are moved by moving them relative to each other. And a lower half portion 2b. The processing chamber 2 is configured to be opened and closed. In the processing chamber 2, a heating plate 4 made of a material such as aluminum and having an upper surface on which the semiconductor substrate 3 can be mounted is housed.

The hot plate 4 includes a heater 5 for heating and a temperature sensor 6. The temperature detection signal of the temperature sensor 6 is configured to be input to a temperature control device 7 that is a control mechanism, and the temperature control device 7 is based on the temperature detection signal from the temperature sensor 6 and outputs an SSR (solid state relay). ) 8 is driven, for example, as shown in the graph of FIG. 2, the electric power supplied to the heater 5 for heating is turned on / off to heat the heating plate 4 to a predetermined set temperature of, for example, several tens to several hundreds of degrees Celsius. Is configured. As shown in the graph of FIG. 2, for example, in the temperature raising mode in which the temperature of the heating plate 4 is raised from the room temperature to the set temperature, the power is continuously supplied, and once the set temperature is reached, the power is supplied once. Are intermittently supplied by, for example, PID control.

A circuit transformer 10 for detecting an electric current is provided in the electric power line 9 for supplying electric power to the heating heater 5 as a mechanism for detecting the electric power flowing through the electric power line 9. The overheat control device 11 is configured to calculate the power value supplied to the heating heater 5 from the current value detected by the circuit transformer 10 and the predetermined voltage value from the power source. .

Information relating to the set temperature of the hot plate 4 and heat radiation conditions is input to the above-described overheating control device 11 from the main control device 12 that controls the heat treatment device 1 in an integrated manner. The information on the heat radiation conditions includes, for example, the ambient temperature, the heating status of the hot plate 4 (whether in the temperature rising mode or the set temperature maintaining mode), the presence or absence of the semiconductor substrate 3 on the hot plate 4, and the hot plate 4. Temperature of the semiconductor substrate 3 to be carried in, the operating conditions of the heating devices 1 above and below the heat treatment devices 1 when a plurality of heat treatment devices 1 are arranged to be stacked, and the supply of process gas and the like during heating. The situation, the power supply voltage to be used, etc.

The memory 13 stores an appropriate amount of power supply under such a set temperature and heat radiation conditions, which is obtained by an experiment in advance. Then, the excessive temperature rise control device 11 which is a means for controlling the power supply, based on the input information regarding the set temperature and the heat radiation condition from the main control device 12 which is also the input means, supplies the appropriate amount of power at this time from the memory 13. Is read, and the appropriate power supply amount is compared with the power actually supplied to the heating heater 5, and when the power is supplied to the heating heater 5 beyond the appropriate power supply amount, the power supply is performed. Is controlled to operate the circuit breaker 14 to cut off the power supply to the heating heater 5. In this case, the power supply may be controlled to be reduced.

For example, if the temperature of the heating plate 4 is set to the preset temperature and the temperature control is normally performed, electric power is supplied to the heating heater 5 regularly and intermittently as shown in FIG. However, for example, when the SSR 8 fails and the current cannot be completely cut off when it is turned off, the leakage current causes an excessive power supply amount. At this time, in the overheating control device 11, the circuit transformer 1
The leak current can be immediately detected by the detection signal from 0, and when the amount of power supply becomes excessive due to this leak current, the circuit breaker 14 is immediately operated to heat the heater 5 for heating.
It is possible to cut off the power supply to. That is,
An abnormality in power supply can be instantly detected on the power supply side. As a result, it is possible to reliably prevent excessive temperature rise and improve safety.

Further, since such an appropriate power supply amount varies depending on the set temperature, it is possible to immediately detect the abnormality at any set temperature, and reduce damage to the semiconductor substrate 3 being processed due to the abnormality. be able to.

Further, the circuit transformer 10, the excessive temperature rise control device 11 and the like can be arranged at arbitrary positions apart from the heating plate 4, and a temperature sensor or the like for a safety device is provided near the heating plate 4 or the like. Since it is not necessary to provide the device, the size of the device is not increased, and the maintenance can be easily performed.

The heating plate 4 is provided with a plurality of, for example, three through holes (not shown), and substrate support pins (not shown) are arranged in these through holes, respectively. . Then, these substrate support pins and the heat plate 4 are moved up and down relatively, and the semiconductor substrate 3 is placed on the substrate support pins in a state where the substrate support pins are projected on the heat plate 4, and then the substrate The semiconductor substrate 3 is configured to be placed on the hot plate 4 with the support pins housed in the hot plate 4. Although not shown in the drawing, the upper surface of the heat plate 4 is a vacuum chuck groove for adsorbing and holding the semiconductor substrate 3, and a small gap (proximity gap) between the upper surface of the heat plate 4 and the lower surface of the semiconductor substrate 3. ) Is provided with a pin insertion hole or the like.

FIG. 3 shows a structure of a substrate processing system in which the heating device 1 having the above structure is arranged. In this substrate processing system, a plurality of cassettes 3A accommodating the semiconductor substrates 3 are placed at one end, and the semiconductor substrate 3 can be transported by a transport mechanism 3B.
0 is provided, and a main arm 31 for transferring the semiconductor substrate 3 is arranged at the center of the side of the cassette station 30, and other substrate processing apparatuses are arranged on both sides of the main arm 31. ing.

As the substrate processing apparatus, a brush scrubber 32 for brush-cleaning the semiconductor substrate 3 and a high-pressure jet cleaning for performing cleaning with high-pressure jet water after the brush cleaning are located on the side of the cassette station 30. There are two sets of cleaning mechanisms integrally configured with the machine 33 so as to sandwich the main arm 31, and two heating devices 1 are stacked on the side of one of the high pressure jet cleaning machines 33. Are arranged.

Further, on the side of these devices, an adhesion processing device 35 for hydrophobicizing the photoresist before applying it to the semiconductor substrate 3 via the connection unit 34, and the adhesion processing device 35. Cooling device 36 and semiconductor substrate 3 for cooling arranged below
A resist coating device 37 for coating the photoresist liquid on the
A developing device 38 for developing and a total of four heating devices 1 arranged in a stack of two are arranged.

Next, the operation of the substrate processing system configured as described above will be described.

First, the unprocessed semiconductor substrate 3 is held by the main arm 31 from the cassette station 30 and conveyed into the brush scrubber 32, in which brush cleaning is performed. Further, the semiconductor substrate 3 is washed with high-pressure jet water in the high-pressure jet washing machine 33 as needed.

After that, the surface of the semiconductor substrate 3 is subjected to a hydrophobic treatment by an adhesion treatment device 35 and cooled by a cooling device 36, and then the photoresist coating device 3 is applied.
At 7, the photoresist solution is applied. Then, after being heated by the heating device 1 and subjected to baking treatment, it is exposed by an exposure device (not shown), and thereafter, development by the developing device 38 and heat treatment by the heating device 1 are performed. Then, it is stored in the cassette 3A of the cassette station 30.

FIG. 4 shows the adhesion processing device 35.
It shows the configuration of. The adhesion processing device 35 supplies HMDS and the like while heating the semiconductor substrate 3 to perform a hydrophobic treatment on the surface, and has a processing chamber 2, a heating plate 4, and the like configured as in the heating device 1 described above. Heating heater 5, temperature sensor 6, temperature control device 7, SSR
8, a circuit transformer 10, an overheating control device 11, a memory 13, a circuit breaker 14 and the like.

An HMDS supply pipe 40 and an exhaust pipe 41 are connected to the processing chamber 2, and a cover 42 is provided so as to surround the periphery thereof. The cover 42 has an opening 43 at a side wall portion on the loading / unloading side of the semiconductor substrate 3.
Is provided, and the exhaust pipe 44 is connected to the side wall portion on the side opposite to the opening 43. And this exhaust pipe 4
By constantly exhausting air from No. 4, a flow of air is formed from the opening 43 to the exhaust pipe 44 side as shown by the arrow in the figure, and even if HMDS leaks to the outside of the processing chamber 2, this HMDS is Exhaust pipe 4 depending on the flow
4 is configured so as not to leak to the outside of the cover 42. A window 45 made of quartz glass is provided on the side wall of the exhaust pipe 44 so that the inside can be seen.

In the adhesion processing device 35, the same effect as that of the heating device 1 described above can be obtained. In addition, it is possible to reliably prevent leakage of the HMDS to the surroundings. This makes it possible to use a chemically amplified resist or the like that reacts sensitively with HMDS.

In each of the above embodiments, the case where the present invention is applied to the heating device 1 and the adhesion processing device 35 for processing the semiconductor substrate (semiconductor wafer) 3 has been described. The same can be applied to a heat treatment apparatus for performing.

[0031]

As described above, according to the heat treatment apparatus of the present invention, it is not necessary to provide a temperature sensor for the safety device in the vicinity of the hot plate, and the operation test of the safety device can be easily performed. Moreover, even under various heat radiation conditions, it is possible to reliably prevent excessive temperature rise and improve safety.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a heating device according to an embodiment of the present invention.

FIG. 2 is a diagram for explaining the operation of the heating device of FIG.

FIG. 3 is a diagram showing a configuration of a substrate processing system in which the heating device of FIG. 1 is arranged.

FIG. 4 is a diagram showing a configuration of an adhesion processing device according to an embodiment of the present invention.

[Explanation of symbols]

 1 Heating Device 2 Processing Chamber 3 Semiconductor Substrate 4 Hot Plate 5 Heating Heater 6 Temperature Sensor 7 Temperature Control Device 8 SSR 9 Power Line 10 Circuit Transformer 11 Excessive Temperature Control Device 12 Main Control Device 13 Memory 14 Circuit Breaker

Claims (3)

[Claims] 1. A heat treatment apparatus comprising: a heater for heating a hot plate; and a control mechanism for supplying electric power to the heater to heat the hot plate to a predetermined set temperature. Detecting means for detecting, storage means for storing an appropriate power supply amount to the heater determined by the set temperature of the hot plate and heat radiation conditions, and an input means for inputting the set temperature and heat radiation conditions of the hot plate, A means for reading the proper power supply amount from the storage means in response to an input from the input means, and controlling power supply to the heater when the detection result of the detection means exceeds the proper power supply amount. And a heat treatment device. 2. The heat treatment apparatus according to claim 1, wherein the means for controlling power supply to the heater is means for cutting off power supply. 3. An adhesion processing apparatus comprising: a heater for heating a hot plate; and a control mechanism for supplying electric power to the heater to heat the hot plate to a predetermined set temperature. A detection means for detecting the temperature, a storage means for storing an appropriate power supply amount to the heater, which is determined by a set temperature of the hot plate and a heat radiation condition, and an input means for inputting the set temperature and the heat radiation condition of the hot plate. Reading the proper power supply amount from the storage means in response to an input from the input means, and controlling the power supply to the heater when the detection result of the detection means exceeds the proper power supply amount. And an adhesion processing device.