JPH0610343B2 - Electrophotographic photoconductor manufacturing equipment - Google Patents

Electrophotographic photoconductor manufacturing equipment

Info

Publication number
JPH0610343B2
JPH0610343B2 JP31050187A JP31050187A JPH0610343B2 JP H0610343 B2 JPH0610343 B2 JP H0610343B2 JP 31050187 A JP31050187 A JP 31050187A JP 31050187 A JP31050187 A JP 31050187A JP H0610343 B2 JPH0610343 B2 JP H0610343B2
Authority
JP
Japan
Prior art keywords
side wall
substrate
evaporation source
width
manufacturing equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31050187A
Other languages
Japanese (ja)
Other versions
JPH01152263A (en
Inventor
正秀 高野
直幸 仙庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP31050187A priority Critical patent/JPH0610343B2/en
Publication of JPH01152263A publication Critical patent/JPH01152263A/en
Publication of JPH0610343B2 publication Critical patent/JPH0610343B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、導電性基体上にセレン系材料などの蒸着によ
り感光層を形成する電子写真用感光体の製造装置に関す
る。
TECHNICAL FIELD The present invention relates to an electrophotographic photoreceptor manufacturing apparatus for forming a photosensitive layer on a conductive substrate by vapor deposition of a selenium-based material or the like.

〔従来の技術〕[Conventional technology]

電子写真を応用したレーザプリンタ,発光ダイオードプ
リンタの正帯電方式のプリンタは、高速型の場合、大部
分、光照射した感光体の表面電位の低い部分に正の電荷
を付与したトナーを付け、これを紙に転写するというネ
ガ・ポジ転写方式である。このような方式のトナーの紙
への転写には負コロナ放電(以下負帯電と呼ぶ)が使わ
れている。
In the case of high-speed type printers such as laser printers and light-emitting diode printers that apply electrophotography, in the case of high-speed type printers, most of the time, the toner with a positive charge is attached to the low-surface-potential portion of the photo-irradiated photoreceptor, It is a negative / positive transfer method that transfers paper onto paper. Negative corona discharge (hereinafter referred to as negative charging) is used for transferring toner of this type onto paper.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

ネガ・ポジ転写方式で感光層全面に生成した負電荷は、
例えばp型感光層のように電子移動度が小さいときには
主たるキャリアが正孔であるため光減衰しにくく、除電
のための光照射を行っても感光体表面に負電荷が残って
しまう。この負電荷は次の印字プロセスに悪影響を与え
る。この結果、画像上に薄く現像される地かぶりが生ず
る。特に、プロセス用紙にカット紙を使用場合には、前
のプロセスで紙のあった部分に比してこれのない部分が
負帯電の効率がよいため、紙のあった部分との間に濃度
差が発生していた。この様な現象を抑制する感光体とし
て、本出願人により特願昭61−314407号により出願され
てたように感光層の導電性基体との界面層を結晶化させ
るか、あるいは特願昭62−110131号により出願されたよ
うに感光層と導電性基体の界面にセレン・テルル合金層
を介在させることにより、基体からの正孔の注入を良く
した感光体がある。しかしこれらの感光体では、蒸着バ
ッチ間のばらつきあるいは感光体軸方向のばらつきの大
きくなることが避けられず、負の帯電位も−100V以下
にするのは非常に困難であった。また基体と感光層との
密着性も非常に悪くなった。
The negative charge generated on the entire photosensitive layer by the negative / positive transfer method is
For example, when the electron mobility is low, such as in the p-type photosensitive layer, holes are the main carriers, so light is less likely to be attenuated, and negative charges remain on the surface of the photoconductor even when light irradiation for static elimination is performed. This negative charge adversely affects the next printing process. This results in a lightly developed background fog on the image. In particular, when cut paper is used as the process paper, the negative charging efficiency is higher in areas without paper than in areas with paper in the previous process. Was occurring. As a photoreceptor for suppressing such a phenomenon, as described in Japanese Patent Application No. 61-314407 filed by the present applicant, the interface layer between the photosensitive layer and the conductive substrate is crystallized, or Japanese Patent Application No. As disclosed in Japanese Patent Application No. 110131, there is a photoconductor in which a selenium-tellurium alloy layer is interposed at an interface between a photoconductive layer and a conductive substrate to improve injection of holes from the substrate. However, in these photoreceptors, it is unavoidable that the variation between vapor deposition batches or the variation in the axial direction of the photoreceptor becomes large, and it is very difficult to set the negative charge potential to −100 V or less. Further, the adhesion between the substrate and the photosensitive layer was also very poor.

本発明の目的は、基体との密着性を悪化させることな
く、感光層の導電性基体との界面層を結晶化させて基体
からの正孔の注入を向上させ、蒸着バッチ間あるいは感
光体の軸方向のばらつきのない低い負帯電特性をもつ電
子写真用感光体の製造装置を提供することにある。
The object of the present invention is to improve the injection of holes from the substrate by crystallizing the interface layer of the photosensitive layer with the conductive substrate without deteriorating the adhesion with the substrate, and to improve the injection of holes from the substrate or between the deposition batches or the photoreceptor. An object of the present invention is to provide an apparatus for manufacturing a photoconductor for electrophotography, which has low negative electrification characteristics without variation in the axial direction.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成するために、本発明の装置は、真空蒸
着槽内の蒸発源が底板に垂直な側壁と、上部がその側壁
に対して傾斜し底板側から前記垂直側壁の頂部より低い
高さまで達する対向側壁との間に生ずる幅4〜6mmの開
口部を有するものとする。
In order to achieve the above-mentioned object, the apparatus of the present invention is such that an evaporation source in a vacuum deposition tank has a side wall perpendicular to a bottom plate, and an upper part is inclined with respect to the side wall and is lower than the top of the vertical side wall from the bottom plate side. It shall have an opening with a width of 4 to 6 mm formed between it and the opposing side wall that reaches up to that point.

〔作用〕[Action]

被蒸着基体に向かう垂直側壁と傾斜した対向側壁により
蒸発源開口部の幅を4〜6mmにしぼることにより、蒸発
源内部の蒸着材料蒸気の圧力が高まり、開口部から傾斜
側壁より上に出た垂直側壁に沿って噴出するガスの密度
が上がるため、基体との界面との密着性を落とすことな
く感光層の界面層の結晶化が効率よく安定にできる。
By narrowing the width of the evaporation source opening to 4 to 6 mm by the vertical side wall facing the substrate to be vapor-deposited and the inclined opposite side wall, the pressure of the vapor deposition material vapor inside the evaporation source increases, and the evaporation source vapor comes out above the inclined side wall. Since the density of the gas jetted along the vertical sidewall increases, the crystallization of the interface layer of the photosensitive layer can be efficiently and stably performed without lowering the adhesiveness with the interface with the substrate.

〔実施例〕〔Example〕

第1図は本発明の一実施例に用いる蒸発源を断面で示
し、外側容器は幅Wが70mm,長さが2000mmの長方形の底
板1と四つの側壁からなり、長辺側の側壁2は高さHが
170mmの平板であるが、それに対向する側壁は底板1に
垂直な高さhが130mmの部分31と側壁2の頂部よりdだ
け低い部分に達し、側壁2の間に幅wの開口部4を形成
する傾斜した部分32とからなる。この外部容器の中に蒸
着材料を入れるボート5が収容され、蒸着材料加熱のた
めの主ヒータ61と温度制御用ヒータ62が上下に配置され
ている。ボート5の上には蒸気を案内するためのガイド
71,72が存在する。このような蒸発源の側壁2と32の上
下差dを10mmとし、開口部の幅wが3mm,5mm,10 m
mのものを作成した。また第1図を共通の部分に同一の
符号を付した第2図に示すように、上部が円柱面状とな
った側壁2,3を有し、底板の幅Wが70はmm,全体の高
さH160mm、垂直部の高さ140 mmの従来の形状の蒸発源
で開口部4の幅wが5mmと10 mmのものを作成した。
FIG. 1 is a cross-sectional view of an evaporation source used in one embodiment of the present invention. The outer container is composed of a rectangular bottom plate 1 having a width W of 70 mm and a length of 2000 mm and four side walls, and the side wall 2 on the long side is Height H is
Although it is a 170 mm flat plate, the side wall facing it reaches a portion 31 having a height h perpendicular to the bottom plate 1 of 130 mm and a portion lower than the top of the side wall 2 by d, and an opening 4 having a width w is formed between the side walls 2. And an inclined portion 32 to be formed. The boat 5 for containing the vapor deposition material is housed in the external container, and the main heater 61 for heating the vapor deposition material and the temperature control heater 62 are arranged vertically. Above the boat 5 is a guide to guide the steam
There are 71 and 72. The vertical difference d between the side walls 2 and 32 of such an evaporation source is 10 mm, and the width w of the opening is 3 mm, 5 mm, 10 m.
I have created m. Also, as shown in FIG. 2 in which FIG. 1 is given the same reference numerals in common, the upper portion has side walls 2 and 3 having a cylindrical surface shape, and the width W of the bottom plate is 70 mm, A conventional evaporation source having a height H of 160 mm and a height of 140 mm in the vertical portion and having a width w of the openings 4 of 5 mm and 10 mm was prepared.

これらの蒸発源を用いた真空蒸着装置の支持軸に切削加
工および洗浄した直径80mmのアルミニウム基体を装着
し、基体温度を結晶化のために66℃に保ち、ベルジャ温
度を44℃にして2〜3×10-5Torrの真空中で純Seからな
る電荷輸送層を成膜した。その後、基体温度を54℃に下
げ、電荷発生層,表面保護層を順次蒸着した。このよう
にして製作した感光体を回転数28.6rpmで回転させ、放
電長280mmのコロナチャージャによりアルミニウム基体
への流れ込み電流が−30μAと一定になる条件で感光体
表面に負帯電を加えて2秒後の表面電位を測定した。こ
の測定は、バッチの再現性を見るために1種類の感光体
について3ロットに対して行った。第1表に測定結果の
負帯電電位およびその工程能力指数Cp値のほか、感光層
の密着強度,材料の基体への付着率,蒸着時間および感
光層外観を、第1図に示した構造で開口部4の幅wが5
mmの蒸発源を用いて本発明の一実施例による感光体の値
を1として相対値で示した。
An aluminum substrate with a diameter of 80 mm that has been machined and washed is attached to the support shaft of a vacuum vapor deposition apparatus that uses these evaporation sources, the substrate temperature is maintained at 66 ° C for crystallization, and the bell jar temperature is set to 44 ° C to A charge transport layer made of pure Se was formed in a vacuum of 3 × 10 −5 Torr. Then, the substrate temperature was lowered to 54 ° C., and the charge generation layer and the surface protective layer were sequentially deposited. The photoconductor thus manufactured was rotated at a rotation speed of 28.6 rpm, and a negative charge was applied to the photoconductor surface for 2 seconds under the condition that the current flowing into the aluminum substrate was constant at -30 μA by the corona charger with a discharge length of 280 mm. The subsequent surface potential was measured. This measurement was performed on 3 lots of one type of photoconductor in order to see the reproducibility of the batch. Table 1 shows the negative charge potential of the measurement results and the process capability index Cp value, as well as the adhesion strength of the photosensitive layer, the adhesion rate of the material to the substrate, the deposition time and the appearance of the photosensitive layer with the structure shown in FIG. The width w of the opening 4 is 5
The value of the photosensitive member according to one embodiment of the present invention was set to 1 using an evaporation source of mm, and indicated as a relative value.

第1表より開口部4の幅wは5mm前後であることが必要
であることが明らかである。
It is clear from Table 1 that the width w of the opening 4 needs to be about 5 mm.

〔発明の効果〕〔The invention's effect〕

本発明によれば、垂直側壁とそれより一段低い傾斜側壁
の間に生ずる幅4〜6mmの開口部を有する蒸発源を用い
ることにより、蒸着材料の蒸気密度が高くなるため基体
上の界面層を結晶化して基体からの正孔の注入を良くし
て負帯電値を低くした電子写真用感光体の感光層の密着
性を低下させることなく製造でき、負帯電のばらつきも
少ない。その上、蒸着材料の付着率が向上し、蒸着時間
が短縮するため、材料費,工数の低減によるコストダウ
ンを図ることができ、正帯電方式のプロセス用の感光体
に限らず、負帯電方式の電子写真装置に用いる感光体の
製造にも有効に使用できる。
According to the present invention, by using an evaporation source having an opening having a width of 4 to 6 mm generated between a vertical side wall and a sloping side wall lower than the vertical side wall, the vapor density of the vapor deposition material is increased, so that the interface layer on the substrate is formed. It can be manufactured without lowering the adhesiveness of the photosensitive layer of the electrophotographic photosensitive member in which the negative charge value is lowered by improving the injection of holes from the substrate by crystallization, and there is little variation in negative charge. In addition, since the deposition rate of the vapor deposition material is improved and the vapor deposition time is shortened, it is possible to reduce the cost by reducing the material cost and man-hours. It can also be effectively used for the production of a photoconductor for use in the electrophotographic apparatus.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の装置に用いる蒸発源の構造
を示す断面図、第2図は従来の蒸発源の断面図である。 1:外部容器底板、2,31:垂直側壁、32:傾斜側壁、
4:開口部、61:主ヒータ、62:制御用ヒータ。
FIG. 1 is a sectional view showing the structure of an evaporation source used in the apparatus of one embodiment of the present invention, and FIG. 2 is a sectional view of a conventional evaporation source. 1: bottom plate of external container, 2, 31: vertical side wall, 32: inclined side wall,
4: Opening part, 61: Main heater, 62: Control heater.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】真空蒸着槽内の蒸発源が底板に垂直な側壁
と上部が該側壁に対して傾斜し底板側から前記垂直側壁
の頂部より低い高さまで達する対向側壁との間に生ずる
幅4〜6mmの開口部を有することを特徴とする電子写真
用感光体の製造装置。
1. A width 4 formed between an evaporation source in a vacuum evaporation chamber and a side wall perpendicular to the bottom plate and an opposite side wall whose upper portion is inclined with respect to the side wall and reaches a height lower than the top of the vertical side wall from the side of the bottom plate. An apparatus for manufacturing an electrophotographic photoreceptor, which has an opening of 6 mm.
JP31050187A 1987-12-08 1987-12-08 Electrophotographic photoconductor manufacturing equipment Expired - Lifetime JPH0610343B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31050187A JPH0610343B2 (en) 1987-12-08 1987-12-08 Electrophotographic photoconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31050187A JPH0610343B2 (en) 1987-12-08 1987-12-08 Electrophotographic photoconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH01152263A JPH01152263A (en) 1989-06-14
JPH0610343B2 true JPH0610343B2 (en) 1994-02-09

Family

ID=18005985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31050187A Expired - Lifetime JPH0610343B2 (en) 1987-12-08 1987-12-08 Electrophotographic photoconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPH0610343B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876189B2 (en) 2001-11-26 2005-04-05 Asahi Kasei Electronics Co., Ltd. Current sensor
CN111020491B (en) * 2019-12-30 2021-11-05 厦门天马微电子有限公司 Evaporation device and evaporation equipment

Also Published As

Publication number Publication date
JPH01152263A (en) 1989-06-14

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