JPH0596731A - Base board for recording head and fabrication of recording head - Google Patents

Abstract

PURPOSE:To provide a highly reliable base board for recording head and the recording head at high yield. CONSTITUTION:In the fabrication of a base board for recording head in which a heating part 110, an NPN transistor 120 for driving the heating part 110, and a wiring electrode 104 for connecting the NPN transistor 120 and the heating part 110 are formed on a P-type silicon substrate 1 through photolithography, a protective film 105 is deposited on the wiring electrode 104 while switching the temperature of the base board from low level to high level.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a recording head substrate having an electrothermal converting element and a recording functional element formed on a substrate, and a method of manufacturing a recording head using the recording head substrate. In particular, the present invention relates to a recording head substrate used for an inkjet recording apparatus used in a copying machine, a facsimile, a word processor, an output printer of a host computer, a video output printer, and the like, and a method of manufacturing the recording head.

[0002]

2. Description of the Related Art Conventionally, a recording head has a structure in which an electrothermal conversion element array is formed on a single crystal silicon substrate, and a driving circuit for this electrothermal conversion element drives an electrothermal conversion element such as a transistor array outside the silicon substrate. A functional element for use is arranged, and a connection between the electrothermal conversion element and the transistor array is made by a flexible cable or wired bonding.

Simplification of the structure considered for the above-mentioned head configuration, or reduction of defects occurring in the manufacturing process,
Furthermore, for the purpose of making the characteristics of each element uniform and improving the reproducibility, a recording head provided with an electrothermal conversion element and a functional element as proposed in JP-A-57-72867 is provided on the same substrate. Ink jet recording apparatuses having the same are known.

FIG. 15 is a sectional view showing a part of the recording head substrate having the above-mentioned structure. A semiconductor substrate 901 is made of single crystal silicon. 902 is an N-type semiconductor epitaxial region, 903 is a high-impurity concentration N-type semiconductor ohmic contact region, 904 is a P-type semiconductor base region, and 905 is a high-impurity concentration N-type semiconductor emitter region. 920
Is formed. 906 is a silicon oxide layer as a heat storage layer and an interlayer insulating layer, 907 is a heating resistance layer, 908 is an aluminum (Al) wiring electrode, 909 is a silicon oxide layer as a protective layer, and 911 is an Al collector / base common electrode. Reference numeral 912 is a Ta layer as a protective film, which forms the base 930 for the recording head. 9 here
40 is a heat generating part. A top plate and a liquid path are formed on the base 930 to form a recording head.

[0005]

Although the structure as described above is excellent, high-speed driving, energy saving, and high integration, which are strongly demanded for recording devices in recent years,
There is still room for improvement in order to satisfy cost reduction and high reliability.

First of all, a recording head having high reliability must be provided at a low price. For that purpose, it is necessary to manufacture the recording head with high yield.

That is, the conventional interlayer film 906, the protective film 909, and the like are PS at 300 to 450 ° C. by atmospheric pressure CVD, PCVD, or the like.
It is formed of G, BPSG, SiO, SiO ₂ , SiON, SiN or the like. At this temperature, for example, as shown in FIG. 11, the wiring or electrode of Al or the like has a hill-like ridge (having a height and diameter of about 2 μm) called hillock during film deposition (growth) by the CVD method. Is generated and grows, and the unevenness of the hillock 204 causes a short circuit between the emitter electrode 201 and the wiring electrode 202 or between the wiring and the protective film of Ta (see the protective film 912 shown in FIG. 15, for example), resulting in malfunction. May occur and the yield may decrease.

Therefore, the present inventor has convinced that the yield of the substrate is improved by suppressing the growth of hillocks during the film deposition by the CVD method.

An object of the present invention is to solve the above-mentioned technical problems and to provide a highly reliable recording head substrate and a recording head manufacturing method at a low cost with a good yield.

[0010]

A method of manufacturing a recording head substrate according to the present invention comprises a plurality of electrothermal conversion elements, a drive functional element for driving each of the electrothermal conversion elements, and a plurality of electrothermal conversion elements by photolithography. In a method of manufacturing a recording head substrate, wherein a plurality of wiring electrodes respectively connecting the driving functional elements and the electrothermal conversion elements and an insulating film provided on the wiring electrodes are formed on a substrate, Is changed from low temperature to high temperature, and the insulating film is formed by depositing the material of the insulating film on the wiring electrode.

Further, the method of manufacturing a recording head substrate of the present invention is a method of manufacturing a recording head substrate having a plurality of electrothermal converting elements and a driving functional element for driving each of the electrothermal converting elements. In the method, a P-type semiconductor layer is formed on the P-type semiconductor substrate by epitaxial growth, and the driving functional element is formed using the P-type semiconductor.

Further, according to the method of manufacturing a recording head of the present invention, a plurality of electrothermal conversion elements, a drive functional element for driving each electrothermal conversion element, each drive functional element and each electrothermal element. A substrate forming step of forming a recording head substrate by forming a plurality of wiring electrodes respectively connecting the conversion elements and an insulating film provided on the wiring electrodes on a substrate, and a plurality of ejection ports for ejecting ink In the method for manufacturing a recording head, the method for manufacturing the recording head substrate includes a step of forming an ink discharging unit having the following on the substrate for the recording head, the manufacturing process of the recording head substrate changing the substrate temperature from a low temperature to a high temperature. And a deposition step of forming the insulating film by depositing the material of the insulating film on the wiring electrode.

[0013]

The present invention will be described in detail below with reference to the drawings. However, the present invention is not limited to the following examples, and any object can be achieved as long as the object of the present invention can be achieved.

FIG. 1 is a schematic sectional view of a recording head substrate manufactured according to the present invention.

The substrate 100 as a recording head substrate is
A heat generating portion 110 which is an electrothermal converting element and a bipolar NPN transistor 120 which is a driving functional element are formed on a P type silicon substrate 1.

In FIG. 1, 1 is a P-type silicon substrate, 2
Is an N-type collector buried region for forming a functional element, 3
Is a P-type isolation buried region for functional device isolation, 4 is an N-type epitaxial region, 5 is a P-type base region for forming a functional device, and 6 is a P-type isolation buried region for device isolation. , 7 is an N type collector buried region for forming a functional element, 8 is a high concentration P type base region for forming an element, and 9 is a high concentration P type for element isolation.
Type isolation region, 10 is an N-type emitter region for forming an element, 11 is a high-concentration N-type collector region for forming an element, 12 is a collector / base common electrode,
Reference numeral 13 is an emitter electrode, and 14 is an isolation electrode. The NPN transistor 120 is formed here, and the collector regions of 2, 4, 7, and 11 are the emitter regions 1.
0 and the base regions 5 and 8 are completely surrounded. Each cell is surrounded and electrically isolated by a P-type isolation buried region, a P-type isolation region 7, and a high-concentration P-type isolation region as element isolation regions.

Here, the NPN transistor 120 is
Two high-concentration N-type collector regions 11 formed on the P-type silicon substrate 1 via the N-type collector buried region 2 and the N-type collector buried region 2, and the N-type collector buried region 2 and the P-type base region High-concentration N-type collector region 1 through 5
Two high-concentration P-type base regions 8 formed inside 1
And a high-concentration N-type emitter region 10 formed by being sandwiched between the high-concentration P-type base region 8 and the N-type collector buried region 2 and the P-type base region 5, the structure of the NPN transistor is The high concentration N type collector region 11 and the high concentration P type base region 8 are collector / base common electrodes 12
It operates as a diode by being connected by. Further, adjacent to the NPN transistor 120, the P-type isolation buried regions 3 and P as element isolation regions are provided.
The type isolation region 6 and the high-concentration P type isolation region 9 are sequentially formed. Further, the heating resistance layer 103 includes the N-type epitaxial region 4, the heat storage layer 101, and the interlayer film 102 integrally provided with the heat storage layer 101.
Heat is generated by cutting the wiring electrode 104 formed on the P-type silicon substrate 1 through the vias and formed on the heating resistance layer 103 to form two edge portions 104 ₁ that are connection end faces. The part 110 is configured.

The entire surface of the substrate 100 for the recording head is covered with a heat storage layer 101 formed of a thermal oxide film or the like, and the electrodes 12, 13 and 14 of the functional element are formed of Al or the like.

In the substrate 100 of this embodiment, a collector / base common electrode 12, an emitter electrode 13 and an isolation electrode 14 are formed on a P-type silicon substrate 1 for a recording head having the above-mentioned drive section (functional element). An interlayer film 102 made of a silicon oxide film or the like formed by a thermal oxidation method, an atmospheric pressure CVD method, a PCVD method, a sputtering method or the like is formed on the upper surface of the heat storage layer 101.
Since Al or the like forming each of the electrodes 12, 13, and 14 has inclined side surfaces, the step coverage of the interlayer film 102 is very excellent, so that the interlayer film 102 does not lose the heat storage effect as compared with the conventional one. It can be made thin.
Al for partially opening the interlayer film 102 to electrically connect the collector / base common electrode 12, the emitter electrode 13 and the isolation electrode 14 and to form an electrical wiring on the interlayer film 102. The wiring electrodes 104, etc. are installed. That is, after partially opening the interlayer film 102, a heating resistance layer 103 such as HfB ₂ by a sputtering method and an Al by a vapor deposition method or a sputtering method.
An electrothermal conversion element including the wiring electrodes 104 is provided. Here, as a material forming the heat generating resistance layer 103, Ta, ZrB ₂ , Ti-W, Ni-Cr, T is used.
a-Al, Ta-Si, Ta-Mo, Ta-W, Ta-
Cu, Ta-Ni, Ta-Ni-Al, Ta-Mo-A
1, Ta-Mo-Ni, Ta-W-Ni, Ta-Si-
Al, Ta-W-Al-Ni and the like.

Further, the interlayer film 102, the protective film 105, etc. are formed by P
When forming SiO, SiON, SiN or the like by the CVD method, the lower layer of the film is 150 to 250 ° C. at the initial stage of film growth.
After growing the film at a low temperature, the upper layer of the film is further grown at 250 to 450 ° C. That is, since the layer grown at a low temperature has an action of suppressing the growth of hillocks, the wiring short circuit due to the hillocks described above (see FIG.
6) can be reduced and the product yield can be remarkably improved.

Next, the basic operation of the functional element (driving section) having the above-mentioned structure will be described. FIG. 2 is a schematic diagram for explaining a method of driving the base 100 shown in FIG.

In this embodiment, as shown in FIGS. 1 and 2, the collector / base common electrode 12 corresponds to the anode electrode of the diode, and the emitter electrode 13 corresponds to the cathode electrode of the diode. That is, by applying a positive potential bias (V _H1 ) to the collector / base common electrode 12, the NPN transistors in the cells (SH1, SH2) are turned on, and the bias current serves as the collector current and the base current, and the emitter electrode 13 More outflow. Further, as a result of short-circuiting the base and the collector, the heat rise and fall characteristics of the electrothermal conversion elements (RH1, RH2) are improved and the film boiling phenomenon occurs, and the controllability of the growth and contraction of bubbles accompanying it is improved. It was improved and stable ink ejection was possible. This is because the inkjet recording head that uses thermal energy has a deep connection between the characteristics of the transistor and the characteristics of film boiling, and because the minority carrier accumulation in the transistor is small, the switching characteristics are faster and the startup characteristics are better than expected. It is thought that it is doing. Further, the parasitic effect is relatively small, there is no variation between elements, and a stable drive current can be obtained.

In the present embodiment, further, by grounding the isolation electrode 14, it is possible to prevent charges from flowing into other adjacent cells, and to prevent the problem of malfunction of other elements. Has become.

In such a semiconductor device, the N-type collector buried region 2 has a concentration of 1 × 10 ¹⁸ cm ⁻³ or more, and the P-type base region 5 has a concentration of 5 × 10 ^{14 to} 5 × 10 5.
It is desirable to set it to ¹⁷ cm ^−3, and further to make the area of the bonding surface between the high concentration base region 8 and the electrode as small as possible. By doing so, it is possible to prevent the generation of leakage current from the NPN transistor to the ground via the P-type silicon substrate 1 and the isolation region.

The method of driving the above substrate will be described in more detail.

FIG. 2 shows two semiconductor functional elements (cells).
However, in practice, such functional elements are arranged at equal intervals corresponding to, for example, 128 electrothermal conversion elements, and are electrically matrixed so as to enable block driving. It is connected. Here, for simplicity of description, driving of the electrothermal conversion elements RH1 and RH2 as two segments in the same group will be described.

In order to drive the electrothermal converting element RH1, the group is first selected by the switching signal G1 and the electrothermal converting element RH1 is selected by the switching signal S1. Then, the diode cell SH1 having the transistor configuration is positively biased and a current is supplied, and the electrothermal conversion element RH1 generates heat. This thermal energy causes the liquid to change its state to generate bubbles and eject the liquid from the ejection port.

Similarly, when driving the electrothermal conversion element RH2, the electrothermal conversion element RH2 is selected by the switching signal G1 and the switching signal S2 to drive the diode cell SH2 to supply a current to the electrothermal conversion body. To do.

At this time, the P-type silicon substrate 1 is grounded through the isolation regions 3, 6, 9. By thus providing the isolation regions 3, 6, 9 of each semiconductor element (cell), malfunction due to electrical interference between the semiconductor elements is prevented.

As shown in FIG. 3, the substrate 100 thus constructed has a liquid passage 505 communicating with a plurality of ejection ports 500.
Liquid path wall member 5 made of a photosensitive resin or the like for forming
01 and the top plate 502 having the ink supply port 503 are attached to the recording head 5 of the inkjet recording system.
It can be 10. In this case, the ink supply port 50
3 is stored in the internal common liquid chamber 504 and supplied to each liquid passage 505, and in that state, the substrate 100
Ink is ejected from the ejection port 500 by driving the heat generating part 110 of FIG.

Next, the manufacturing process of the recording head 510 according to this embodiment will be described.

(1) P-type silicon substrate 1 (impurity concentration 1
8000 on the surface of (× 10 ¹² to 1 × 10 ¹⁶ cm ⁻³ )
After the silicon oxide film having a thickness of about Å was formed, the silicon oxide film in the portion forming the N-type collector buried region 2 of each cell was removed by a photolithography process. After forming the silicon oxide film, N-type impurities (for example, P, As, etc.)
By ion implantation and thermal diffusion to obtain an impurity concentration of 1 × 10 ¹⁸ c
The N-type collector buried region 2 of m ^-3 or more was formed to a thickness of 2 to 6 μm so that the sheet resistance was as low as 80 Ω / □ or less. Subsequently, the P-type isolation buried region 3
Remove the silicon oxide film in the area where
After a silicon oxide film is formed to a certain extent, P-type impurities (for example, B) are ion-implanted and thermally diffused to form a P-type isolation buried region having an impurity concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ⁻³ or more. 3 was formed (above FIG. 4).

(2) After removing the silicon oxide film on the entire surface, the N type epitaxial region 4 (impurity concentration 1 × 10 ¹³
˜1 × 10 ¹⁵ cm ⁻³ ) was epitaxially grown to a thickness of 5 to 20 μm (above FIG. 5).

(3) Next, a silicon oxide film of about 1000 Å is formed on the surface of the N type epitaxial region 4, a resist is applied, and patterning is performed so that P is formed only in the portion where the low concentration P type base region 5 is formed. Type impurities were ion-implanted. After removing the resist, a low concentration P-type base region 5 (impurity concentration of about 1 × 10 ¹⁴ to 1 × 10 ¹⁷ cm ⁻³ ) was formed to a thickness of about 5 to 10 μm by thermal diffusion.

After the step (1), the P-type base region 5 is formed.
It can also be formed by removing the oxide film and then growing a low concentration P-type epitaxial layer of about 5 × 10 ^{14 to} 5 × 10 ^{17 to} about 3 to 10 μm.

After that, the entire surface of the silicon oxide film is removed again, and a silicon oxide film of about 8000 Å is formed. Then, the silicon oxide film in the region where the P-type isolation region 6 is to be formed is removed, and the BSG film is entirely covered. The P-type isolation region 6 (impurity concentration of about 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ ) is deposited by the CVD method and further reaches the P-type isolation embedded region 3 by thermal diffusion. To a thickness of about 10 μm. Here, BBr ₃
It is also possible to form the P-type isolation region 6 by using as a diffusion source (above FIG. 6).

As described above, when the P-type epitaxial layer is used, a structure in which the P-type isolation buried region 3 and the P-type isolation region 6 are unnecessary is possible. The photolithography process for forming the P-type isolation region 6 and the low-concentration base region 5 and the high temperature impurity diffusion process can be omitted.

(4) After removing the BSG film, 8000Å
After forming a silicon oxide film of a certain degree and further removing the silicon oxide film only in the portion forming the N-type collector region 7, the N-type solid phase diffusion and phosphorus ion implantation or thermal diffusion are performed to form a collector buried region 5 And an N-type collector region 7 (impurity concentration of about 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ ) was formed so that the sheet resistance reaches a low level and the sheet resistance is 10 Ω / □ or less. At this time, the thickness of the N-type collector region 7 was set to about 10 μm. Subsequently, a silicon oxide film having a thickness of about 12,500 Å was formed to form the heat storage layer 101 (see FIG. 8), and then the silicon oxide film in the cell region was selectively removed.

The heat storage layer 101 is formed by forming the N-type collector region 7 and then forming a silicon thermal oxide film having a thickness of 1000 to 3000 Å, and further using a CVD method, a PCVD method, a sputtering method or the like to form BPSG (boron and phosphorus). A film of silicate glass containing Si), PSG (silicate glass containing phosphorus), SiO ₂ , SiON, SiN, or the like may be formed. Then, a silicon oxide film having a thickness of about 2000 Å was formed.

Resist patterning was performed, and P-type impurities were implanted only in the portions where the high-concentration base region 8 and the high-concentration isolation region 9 were formed. After removing the resist, the silicon oxide film in the region where the N-type emitter region 10 and the high-concentration N-type collector region 11 are to be formed is removed, a thermal oxide film is formed on the entire surface, and N-type impurities are implanted. The N type emitter region 10 and the high concentration N type collector region 11 were simultaneously formed by diffusion. The N-type emitter region 10 and the high-concentration N-type collector region 11 each have a thickness of 1.0 μm or less and an impurity concentration of 1 × 10.
^{It was set} to about ¹⁸ to 1 × 10 ²⁰ cm ⁻³ (above FIG. 7).

(5) Further, after removing the silicon oxide film at the connection portion of the partial electrodes, Al or the like was deposited on the entire surface, and Al or the like other than the partial electrode region was removed. (The above is FIG. 8).

(6) Then, a SiO ₂ film to be the interlayer film 102 which also functions as a heat storage layer is formed on the entire surface by PCVD to a thickness of about 0.6 to 2.0 μm. At that time 150 ~
After depositing a film of about 1000 to 3000 Å at a low temperature of 250 ° C., the remaining film thickness is grown at 250 to 450 ° C.
Then, the film grown at a low temperature has an action of suppressing the growth of hillocks when the substrate temperature is raised to 250 to 450 ° C. Here, Table 1 shows the examination results regarding the substrate temperature, hillock growth, and film quality evaluation by the PCVD method.

In Table 1, the item of substrate temperature is 200-35.
“0” means that the film was deposited at 200 ° C. and then at 350 ° C., and the other 100 to 45
Each numerical value of 0 indicates that the film was deposited at a constant temperature. In the item of numerical hillock suppression, x was observed when hillock growth was observed considerably, △ was observed when hillock growth was slightly observed, and ○ was observed when hillock growth was not observed so much. In addition, in terms of film quality, particularly rough ones were marked with X, slightly rough ones with Δ, and dense ones with ○. Hillocks do not grow much when the film is deposited at 100 to 250 ° C. That is, both the number and the size (the existing density and height) are small, and the growth is suppressed. However, the film deposited and formed at low temperature is
The film quality is relatively "rough", which may lead to a decrease in reliability of the substrate and the recording head having this film. Also, 15
At a temperature below 0 ° C., temperature control becomes difficult due to the structure of the CVD device. Therefore, after depositing up to a film thickness of 1500Å at 200 ° C and additionally depositing up to a film thickness of 8500Å at 350 ° C, hillock growth was suppressed and the film quality was good. On the other hand, in the film deposited at 300 ° C. or higher, hillocks were considerably observed although the film quality was good.

[0044]

[Table 1] Not limited to the above two-stage CVD method, the substrate temperature at the initial stage of growth is 150 to 250 ° C., and the substrate temperature at the end of growth is 250 to 4
It is effective to suppress the hillock growth of Al or the like by dividing the furnace temperature in the CVD method into three or more steps so that the temperature becomes 50 ° C., or continuously changing the furnace temperature to change the substrate temperature. is there. FIG. 16 shows the furnace temperature of 200-350.
The time change of the film thickness when the CVD method is performed while continuously changing to ° C is shown. As shown in FIG. 13, a film thickness of more than 10,000 Å was obtained when 60 minutes had passed after starting the CVD method.

The interlayer film 102 may be formed by the atmospheric pressure CVD method. Not only the SiO ₂ film, but also SiON,
It may be a SiO film or a SiN film.

Next, in order to establish electrical connection, a part of the interlayer film 102, which is above the emitter region and the base / collector region, was opened by photolithography to form a through hole TH (see FIG. 9 above).

At the time of etching the insulating film such as the interlayer film 102 and the protective film 105, a mixed acid etching solution such as NH ₄ F + CH ₃ COOH + HF is used to infiltrate the etching solution at the interface between the resist (mask photoresist) and the insulating film. By doing so, the etching cross-sectional shape is tapered (3 with respect to the normal line).
0 degree or more and 75 degrees or less is preferable). This is excellent in the step coverage of each film formed on the interlayer film, and helps stabilize the manufacturing process and improve the yield.

(7) Next, H as the heating resistance layer 103
About 1000 Å of fB ₂ was deposited on the interlayer film 102 and on the electrode 13 and the electrode 12 above the emitter region and the base / collector region for electrical connection through the through hole TH.

(8) On the heating resistance layer 103, a pair of wiring electrodes 104, 104 of the electrothermal conversion element, a cathode wiring electrode 104 of the diode, and an anode wiring electrode 109.
About 5000 Å of a layer made of Al material as
Al and HfB ₂ (heating resistance layer 103) were patterned to form an electrothermal conversion element and other wirings at the same time. Here, the patterning of Al is the same as that of the method described above (FIG. 10 above).

(9) After that, the SiO ₂ film 105 as a protective layer of the electrothermal conversion element and an insulating layer between the Al wirings was deposited by about 10000Å by the PCVD method or the like. the first,
The film growth is performed at a relatively low temperature (150 to 250 ° C.) to suppress the growth of hillocks, as described above.

After that, Ta is applied as a protective layer 106 for anti-cavitation to the upper portion of the heat generating portion of the electrothermal converter.
About 00Å was deposited.

(10) The electrothermal conversion element, Ta and SiO ₂ film 105 produced as described above were partially removed to form a pad 107 for bonding. Note that the protective film 105 may be SiO, SiON, or SiO in addition to SiO ₂ (FIG. 11 above).

(11) Next, a liquid path wall member for forming the ink ejection portion 500 and the top plate 502 are arranged on a substrate having a semiconductor element, and an ink liquid path is formed inside them. A head was manufactured (FIG. 12 above). (Other Embodiments) In the manufacturing process described above, the P-type isolation buried region 3 is formed, the N-type region 4 is formed by epitaxial growth, and the low concentration base region 5 and the P-type isolation are formed by ion implantation and thermal diffusion. The area 6 was formed.

On the other hand, if a P-type semiconductor layer having an impurity concentration of 5 × 10 ^{14 to} 5 × 10 ¹⁷ is formed by epitaxial growth to a thickness of 5 to 20 μm and is used in place of the region 4, the low concentration base regions 5 and P are formed. The type isolation region 6 and the P type isolation buried region 3 can also be used in common,
The step of forming these regions (photolithography or high temperature heat treatment) in the above-described manufacturing method can be omitted.

That is, three masks are not required as compared with the case of using the N type epitaxial layer.

With respect to the plurality of recording heads manufactured as described above, the electrothermal conversion elements are block-driven,
Recording and operation tests were conducted. In the operation test, eight semiconductor diodes were connected to one segment, and a current of 300 mA (total 2.4 A) was applied to each semiconductor diode.
Other semiconductor diodes did not malfunction, and good ejection was possible.

An ink jet recording apparatus capable of high-speed recording and high-quality recording can be obtained by mounting the recording head 510 having the above-described configuration on the recording apparatus main body and applying a signal from the apparatus main body to the recording head 510. You can

Next, an ink jet recording apparatus using the recording head of the present invention will be described with reference to FIG.
FIG. 14 shows an inkjet recording device 7 to which the present invention is applied.
12 is a schematic perspective view showing an example of No. 00.

The recording head 510 is mounted on a carriage 720 that engages with a spiral groove 721 of a lead screw 704 that rotates via driving force transmission gears 702 and 703 in association with forward and reverse rotations of a drive motor 701. And
The carriage 720 is driven by the power of the drive motor 701.
At the same time, it is reciprocated along the guide 719 in the directions of arrows a and b. A paper pressing plate 705 for the recording paper P that is conveyed onto the platen 706 by a recording medium feeding device (not shown).
Presses the recording paper P against the platen 706 in the carriage movement direction.

Photocouplers 707 and 708 are home position detecting means for confirming the presence of the lever 709 of the carriage 720 in this area and switching the rotation direction of the drive motor 701. Reference numeral 710 is a support member that supports a cap member 711 that caps the entire surface of the recording head 510, and 712 is the cap member 711.
By suction means for sucking the inside, the suction recovery of the recording head 510 is performed through the cap inner opening 713. Reference numeral 714 is a cleaning blade, and 715 is a moving member that allows the blade to move in the front-rear direction, and these are supported by a main body support plate 716. Cleaning blade 714
Needless to say, a well-known cleaning blade other than this form can be applied to this example. Also, 717 is
A lever for starting suction for suction recovery, which moves in accordance with the movement of the cam 718 that engages with the carriage 720, and the driving force from the driving motor 701 is movement-controlled by a known transmission means such as clutch switching. A print control unit that gives a signal to the heat generating unit 110 provided in the recording head 510 and controls drive of each mechanism described above is provided on the apparatus main body side (not shown).

In the ink jet recording apparatus 700 having the above-mentioned structure, the platen 7 is formed by the recording medium feeding apparatus.
The recording head 51 for the recording paper P conveyed on
0 is for recording while reciprocating over the entire width of the recording paper P, and since the recording head 510 is manufactured by the method described above, high-accuracy and high-speed recording is possible. ..

In the above description, an example in which the substrate is used in an ink jet type recording head has been described.
The substrate according to the present invention can be applied to, for example, a thermal head substrate.

The present invention brings excellent effects particularly in a recording head and a recording apparatus of the type which ejects ink by utilizing thermal energy, which is proposed by Canon Inc. among the ink jet recording systems.

With regard to its typical structure and principle, it is preferable to use the basic principle disclosed in, for example, US Pat. Nos. 4,723,129 and 4,740,796. This method can be applied to both the so-called on-demand type and continuous type, but in the case of the on-demand type, in particular, it is arranged corresponding to the sheet or liquid path holding the liquid (ink). A thermal energy is generated in the electrothermal converter by applying at least one driving signal to the electrothermal converter, which corresponds to the recorded information and gives a rapid temperature rise exceeding nucleate boiling, and the recording head This is effective because the film is boiled on the heat-acting surface, and as a result, bubbles can be formed in the liquid (ink) in one-to-one correspondence with this drive signal. By the growth and contraction of the bubbles, liquid (ink) is ejected through the ejection opening,
Form at least one drop. It is more preferable to make this drive signal into a pulse shape, because the bubble growth and contraction are immediately and appropriately performed, so that the ejection of the liquid (ink) with excellent responsiveness can be achieved. As the pulse-shaped drive signal, those described in US Pat. Nos. 4,463,359 and 4,345,262 are suitable. In addition,
US Pat. No. 4, of the invention relating to the rate of temperature rise of the heat acting surface,
If the conditions described in the specification of 313,124 are adopted,
Further excellent recording can be performed.

As the constitution of the recording head, in addition to the combination constitution of the discharge port, the liquid passage, and the electrothermal converter (the linear liquid passage or the right-angled liquid passage) as disclosed in the above-mentioned respective specifications. U.S. Pat.No. 4,558,333, U.S. Pat.
A configuration using the specification of No. 9,600 is also included in the present invention. In addition, for a plurality of electrothermal converters, JP-A-123670 discloses a configuration in which a common slit is a discharge portion of the electrothermal converter, and an opening for absorbing a pressure wave of thermal energy. Disclosed is a structure corresponding to a discharge unit.
The present invention is also effective as a configuration based on the '138461 publication.

Further, as a full-line type recording head having a length corresponding to the maximum recording medium width that can be recorded by the recording apparatus, a combination of a plurality of recording heads as disclosed in the above-mentioned specification is used. The present invention can exert the above-mentioned effects more effectively, although it may have a configuration satisfying the length or a configuration as one recording head integrally formed.

In addition, by being attached to the apparatus main body, it can be electrically connected to the apparatus main body and can be supplied with ink from the apparatus main body of a replaceable chip type recording head or the recording head itself. The present invention is also effective when a cartridge-type recording head that is specially provided is used.

Further, it is preferable to add recovery means for the recording head, preliminary auxiliary means, etc., which are provided as a configuration of the recording apparatus of the present invention, because the effects of the present invention can be further stabilized. .. Specific examples thereof include capping means, cleaning means, pressurizing or sucking means, an electrothermal converter or a heating element other than this, or a preheating means for the recording head, and recording for the recording head. It is also effective to perform a preliminary ejection mode in which another ejection is performed for stable recording.

Further, the recording mode of the recording apparatus is not limited to the recording mode of only the mainstream color such as black, but the recording head may be integrally formed or a plurality of combinations may be used. The present invention is also extremely effective for a device provided with at least one of full color by color mixing.

In the embodiments of the present invention described above, the ink is described as a liquid, but it is an ink that solidifies at room temperature or below, and is softened or liquid at room temperature, or the ink itself is 30 Generally, the temperature is controlled in the range of ℃ to 70 ℃ to control the temperature of the ink so that the viscosity of the ink is within the stable ejection range. Good. In addition, the temperature rise due to thermal energy is positively prevented by using it as the energy for the state change of the ink from the solid state to the liquid state, or
By using ink that solidifies when left standing for the purpose of preventing evaporation of the ink, the ink is liquefied by applying heat energy according to the recording signal and reaches the recording medium or the one that is ejected as an ink liquid. The use of inks that have the property of only liquefying by thermal energy, such as those that have already begun to solidify at this point, is also applicable to the present invention. In such a case, the ink is, as described in JP-A-54-56847 or JP-A-60-71260, in a state of being held as a liquid or a solid in the recesses or through holes of the porous sheet, It may be configured to face the electrothermal converter. In the present invention, the most effective one for each of the above-mentioned inks is to execute the above-mentioned film boiling method.

[0071]

As described above, according to the present invention, since the insulating film is deposited on the wiring electrode while changing the substrate temperature from the low temperature to the high temperature, the growth of hillocks can be suppressed and the reliability can be improved. A high printhead substrate and printhead can be realized at low cost. Then, the manufacturing yield of the recording head substrate and the recording head could be improved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a recording head substrate manufactured according to the present invention.

FIG. 2 is a schematic diagram for explaining a method of driving a recording head manufactured according to the present invention.

FIG. 3 is a schematic perspective view showing an appearance of a recording head manufactured according to the present invention.

FIG. 4 is a schematic cross-sectional view for explaining an example of a recording head manufacturing method according to the present invention.

FIG. 5 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 6 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 7 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 8 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 9 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 10 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 11 is a schematic cross-sectional view for explaining an example of the method of manufacturing the recording head according to the present invention.

FIG. 12 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 13 is a graph showing the time variation of the film thickness when the furnace temperature is continuously changed.

FIG. 14 is a schematic perspective view showing an example of an inkjet recording device to which a recording head manufactured according to the present invention can be mounted.

FIG. 15 is a cross-sectional view showing a part of a conventional recording head substrate.

FIG. 16 is a schematic diagram showing how hillocks grow on a substrate.

[Explanation of symbols]

 1 P-type silicon substrate 2 N-type collector buried region 3 P-type isolation buried region 4 N-type epitaxial region 5 P-type base region 6 P-type isolation region 7 N-type collector region 8 High-concentration P-type base region 9 High Concentration P-type isolation region 10 High-concentration N-type emitter region 11 High-concentration N-type collector region 12 Collector-base common electrode 13 Emitter electrode 14 Isolation electrode 100 Recording head 101 Thermal storage layer 102 Interlayer film 103 Heating resistance layer 104 Wiring electrode 105 Protective film 106 Protective film 107 Bonding pad 110 Heat generating part 500 Discharge port 501 Liquid path wall member 502 Top plate 503 Ink supply port 510 Recording head

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Katsura Fujita 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Shigeyuki Matsumoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Within the corporation

Claims (21)

[Claims] 1. A plurality of electrothermal conversion elements, a drive functional element for driving each electrothermal conversion element, and a connection between each drive functional element and each electrothermal conversion element by photolithography. In a method of manufacturing a recording head substrate, in which a plurality of wiring electrodes and an insulating film provided on the wiring electrodes are formed on a substrate, the substrate temperature is changed from a low temperature to a high temperature, and the insulating film is formed on the wiring electrode. A method of manufacturing a recording head substrate, characterized in that the insulating film is formed by depositing a material. 2. A method of manufacturing a recording head substrate according to claim 1, wherein the material of the insulating film is deposited on the wiring electrode by gradually changing the substrate temperature from a low temperature to a high temperature. 3. The method of manufacturing a recording head substrate according to claim 1, wherein the substrate temperature is continuously changed from a low temperature to a high temperature to deposit the material of the insulating film on the wiring electrode. 4. After depositing a material for an insulating film on a wiring electrode at a substrate temperature of 150 to 250 ° C., 250 to 45 thereon.
4. The method for manufacturing a recording head substrate according to claim 1, further comprising depositing an insulating film material at a substrate temperature of 0.degree. 5. The method of manufacturing a recording head substrate according to claim 1, wherein the insulating film is deposited by a CVD method. 6. The method for manufacturing a recording head substrate according to claim 5, wherein the CVD method is a plasma CVD method. 7. The method of manufacturing a recording head substrate according to claim 1, wherein the insulating film is SiO. 8. The method of manufacturing a recording head substrate according to claim 1, wherein the insulating film is SiN. 9. The method for manufacturing a recording head substrate according to claim 1, wherein the insulating film is SiO ₂ . 10. The method of manufacturing a recording head substrate according to claim 1, wherein the insulating film is SiON. 11. A method of manufacturing a recording head substrate having a plurality of electrothermal converting elements and a driving functional element for driving each of the electrothermal converting elements, wherein P is formed on a P type semiconductor substrate by epitaxial growth. A method of manufacturing a substrate for a recording head, comprising forming a type semiconductor layer, and using the P type semiconductor to form the driving functional element. 12. A plurality of electrothermal conversion elements, a drive functional element that drives each electrothermal conversion element, and a plurality of wirings that connect each drive functional element and each electrothermal conversion element. The base body forming step of forming an electrode and an insulating film provided on the wiring electrode on a substrate to form a base body for a recording head, and an ejection portion having a plurality of ejection ports for ejecting ink, In the method of manufacturing a recording head, including a step of forming an ink ejecting portion formed above, the step of manufacturing the recording head substrate is performed by changing the substrate temperature from a low temperature to a high temperature to form the insulating film material on the wiring electrode. And a deposition step of forming the insulating film by deposition. 13. The method of manufacturing a recording head according to claim 12, wherein the depositing step deposits the material of the insulating film on the wiring electrode by gradually changing the substrate temperature from a low temperature to a high temperature. .. 14. The method of manufacturing a recording head according to claim 12, wherein the depositing step deposits the material of the insulating film on the wiring electrode by continuously changing the substrate temperature from a low temperature to a high temperature. .. 15. The deposition step comprises depositing an insulating film material on a wiring electrode at a base temperature of 150 to 250 ° C., and then further depositing an insulating film material on the wiring electrode at a base temperature of 250 to 450 ° C. 15. The method of manufacturing a recording head according to claim 12, wherein: 16. The method according to claim 12, wherein the deposition of the insulating film in the deposition step is performed by a CVD method.
A method of manufacturing a recording head according to any one of 1. 17. The method of manufacturing a recording head according to claim 16, wherein the CVD method is a plasma CVD method. 18. The method of manufacturing a recording head according to claim 12, wherein the insulating film deposited in the deposition step is SiO. 19. The method of manufacturing a recording head according to claim 12, wherein the insulating film deposited in the deposition step is SiN. 20. The insulating film deposited in the deposition process is SiO ₂
18. The method of manufacturing a recording head according to claim 12, wherein: 21. The insulating film deposited in the deposition process is SiON.
18. The method of manufacturing a recording head according to claim 12, wherein: