JPH0593255A - Method for plasma spraying on substrate - Google Patents
Method for plasma spraying on substrateInfo
- Publication number
- JPH0593255A JPH0593255A JP3280414A JP28041491A JPH0593255A JP H0593255 A JPH0593255 A JP H0593255A JP 3280414 A JP3280414 A JP 3280414A JP 28041491 A JP28041491 A JP 28041491A JP H0593255 A JPH0593255 A JP H0593255A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- high frequency
- plasma spraying
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Coating By Spraying Or Casting (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はプラズマ溶射方法、特に
基板への溶融試料をプラズマ溶射によって均一に付着さ
せるプラズマ溶射方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma spraying method, and more particularly to a plasma spraying method for uniformly depositing a molten sample on a substrate by plasma spraying.
【0002】[0002]
【従来の技術】溶射技術には種々の方法が開発されてい
るが、近年特にプラズマ溶射法が注目を集めている。こ
のプラズマ溶射法においては、溶射対象基板への溶射性
能向上、即ち接合強度や緻密性向上のために、溶射前後
に於ける温度管理が必要である。2. Description of the Related Art Various methods have been developed for the thermal spraying technique, but in recent years, the plasma thermal spraying method has attracted particular attention. In this plasma spraying method, it is necessary to control the temperature before and after the spraying in order to improve the spraying performance on the substrate to be sprayed, that is, the bonding strength and the denseness.
【0003】従来においては、基板にプラズマ溶射する
場合、ニクローム線やカーボンヒータ等の電熱ヒータを
基板に直接接触させて基板を加熱したり、赤外線ランプ
等による幅射加熱が用いられていた。Conventionally, when plasma-spraying a substrate, an electrothermal heater such as a nichrome wire or a carbon heater is brought into direct contact with the substrate to heat the substrate, or radiant heating using an infrared lamp or the like is used.
【0004】[0004]
【発明が解決しようとする課題】プラズマ溶射法におい
ては、基板の材質も金属並びに非金属のセラミックスな
どが使用され、溶着膜の一様性を向上させるために、基
板を高速で回転させたり、上下左右に移動させる必要が
ある。この点から、電熱ヒータ等を基板に直接接触させ
る方法は構造上困難であり、またガス雰囲気内のプラズ
マフレームによる高温状態では、赤外線ランプ等による
幅射加熱も実施が難しい。In the plasma spraying method, metal and non-metal ceramics are used as the material of the substrate, and the substrate is rotated at a high speed in order to improve the uniformity of the deposited film. You need to move it up / down / left / right. From this point, it is structurally difficult to directly contact the electric heater or the like with the substrate, and it is also difficult to perform radiant heating with an infrared lamp or the like in a high temperature state of the plasma flame in the gas atmosphere.
【0005】本発明は上記従来技術にかんがみ、回転、
移動する基板を非接触で加熱し、プラズマ溶射性能を向
上する方法を提供することを目的とする。In view of the above-mentioned prior art, the present invention relates to rotation,
It is an object of the present invention to provide a method for heating a moving substrate in a non-contact manner to improve plasma spraying performance.
【0006】[0006]
【課題を解決するための手段】本発明は、高周波誘導加
熱によって基板を非接触で加熱し、かつ該基板を移動さ
せながらプラズマ溶射を行う基板へのプラズマ溶射方法
である。本発明では、高周波誘導加熱方式で基板を非接
触で加熱する。そのため回転、移動する基板の加熱が容
易となる。溶射対象基板への溶射性能向上のために
は、、溶射前に基板を均一に余熱しておき、溶射後にそ
の温度を徐々に低下させることが必要である。従来の技
術では、高速で回転させたり、上下左右に移動させる基
板にこの様な温度管理を実施することが困難であった
が、本発明の高周波誘導加熱方式では理想的に管理でき
る。The present invention is a plasma spraying method for heating a substrate in a non-contact manner by high frequency induction heating and performing plasma spraying while moving the substrate. In the present invention, the substrate is heated in a non-contact manner by the high frequency induction heating method. Therefore, heating of the rotating and moving substrate becomes easy. In order to improve the thermal spraying performance on the thermal spraying target substrate, it is necessary to uniformly preheat the substrate before thermal spraying and gradually lower the temperature after thermal spraying. In the conventional technique, it is difficult to perform such temperature control on the substrate that is rotated at high speed or moved vertically and horizontally, but it can be ideally controlled by the high frequency induction heating method of the present invention.
【0007】[0007]
【作用】円筒形基板の側面に溶射薄膜を生成させるに
は、図2のごとく円筒形または平板状基板6の軸に沿っ
て高周波コイルを巻き、これに高周波電流を流して基板
を加熱する。このとき、基板材質が導電性でなく、セラ
ミックのような絶縁体ならば、その中心に沿って磁性体
棒を挿入するか、または平板の裏面に磁性体板を当てて
傍熱的に加熱すれば良い。また円筒形基板の頭部平面に
溶射薄膜を生成させるには、図3の如くその部分の回り
にソレノイドコイルを巻いて、その面を高周波加熱す
る。In order to form the sprayed thin film on the side surface of the cylindrical substrate, a high frequency coil is wound along the axis of the cylindrical or flat substrate 6 as shown in FIG. 2, and a high frequency current is passed through the coil to heat the substrate. At this time, if the substrate material is not conductive and it is an insulator such as ceramics, insert a magnetic rod along the center of it or place a magnetic plate on the back surface of a flat plate to heat it indirectly. Good. Further, in order to form the sprayed thin film on the head plane of the cylindrical substrate, a solenoid coil is wound around that portion as shown in FIG. 3 and the surface is subjected to high frequency heating.
【0008】上記のように、高周波誘導加熱方式によっ
て基板を非接触で加熱すれば、高温のガス雰囲気内で
も、これを自由に回転、移動できるので、均一に薄膜を
形成させ、理想的に温度管理できる。As described above, if the substrate is heated in a non-contact manner by the high frequency induction heating method, it can be freely rotated and moved even in a high temperature gas atmosphere, so that a thin film can be formed uniformly and ideally at a desired temperature. Can be managed.
【0009】[0009]
【実施例】図1は400kHz、10kW、の工業用の
高周波電力源10を使用した本発明の実施例の説明概略
図であり、1は真空容器、2はプラズマ発生部を示し、
プラズマ発生部2の周囲には高周波コイル3が巻かれ、
高周波電源4からは2MHz、100kWの電力を高周
波コイル3に供給した。これによってプラズマ発生部2
の内部にプラズマ5が発生する。このとき上部の投入口
6から粉体試料を投入すると、これがプラズマ内で溶融
して、基板7の面上に付着する。基板7は円筒状基板で
あり、プラズマ溶射の際には回転装置11によって円筒
の円周方向に回転されている。このとき、基板は予め適
当な温度まで余熱してあるので、基板7の回転(A方
向)と移動(B方向)によって、溶融試料は面上に均一
に付着する。試料厚さが希望値になると試料投入を止
め、プラズマを停止させ、次に基板の加熱用の高周波電
力源10を徐々に低下させて、必要な降下速度で基板の
温度を下げる。1 is a schematic explanatory view of an embodiment of the present invention using an industrial high-frequency power source 10 of 400 kHz, 10 kW, 1 is a vacuum vessel, 2 is a plasma generator,
A high frequency coil 3 is wound around the plasma generator 2.
Electric power of 2 MHz and 100 kW was supplied from the high frequency power source 4 to the high frequency coil 3. As a result, the plasma generator 2
A plasma 5 is generated inside the. At this time, when a powder sample is charged through the charging port 6 in the upper part, the powder sample is melted in the plasma and adheres to the surface of the substrate 7. The substrate 7 is a cylindrical substrate, and is rotated in the circumferential direction of the cylinder by a rotating device 11 during plasma spraying. At this time, since the substrate is preheated to an appropriate temperature in advance, the molten sample is uniformly attached on the surface by the rotation (direction A) and movement (direction B) of the substrate 7. When the sample thickness reaches the desired value, the sample injection is stopped, the plasma is stopped, and then the high frequency power source 10 for heating the substrate is gradually lowered to lower the substrate temperature at the required lowering speed.
【0010】基板7は図2に示すように、基板の円筒状
にそった形状に形成された高周波コイル8及び基板加熱
用の高周波電力源10によって非接触で加熱されてい
る。プラズマによる溶融試料の付着中は、高周波コイル
8は基板7から離れている。図3は円筒状基板7の頭部
平面に溶融試料を付着させる場合を示しており、加熱部
の周囲にソレノイド高周波コイル9を巻き、これに高周
波電流を流して加熱し、回転(A方向)させつつ上下に
移動(B方向)させて、適当な厚さに均一付着させる。As shown in FIG. 2, the substrate 7 is heated in a non-contact manner by a high-frequency coil 8 and a high-frequency power source 10 for heating the substrate, which are formed in a cylindrical shape of the substrate. The high frequency coil 8 is separated from the substrate 7 during the deposition of the molten sample by the plasma. FIG. 3 shows a case where the molten sample is attached to the plane of the head of the cylindrical substrate 7. A solenoid high-frequency coil 9 is wound around the heating unit, and a high-frequency current is passed through the solenoid to heat it for rotation (direction A). While being moved, it is moved up and down (direction B) to uniformly adhere to an appropriate thickness.
【0011】[0011]
【発明の効果】本発明は高周波誘導加熱方式によって、
基板を非接触で加熱できるため次のような特徴を有す
る。 1、 回転、移動しつつある基板の加熱が可能である。 2、 加熱コイルの材質、電流の導入方法やコイルの形
状を工夫することによって、真空中またはあらゆるガス
雰囲気中、高温雰囲気中でも加熱が可能である。 3、 セラミックスのような非磁性体の場合には、基板
内に磁性体を組み込み、傍熱的に加熱することができ
る。 4、 従来の方式に比べて、効率よく基板を加熱でき
る。 5、 基板の温度制御が簡単で、処理後の基板の温度逓
減速度の制御が容易である。The present invention uses the high frequency induction heating system to
Since the substrate can be heated without contact, it has the following features. 1. It is possible to heat a substrate that is rotating and moving. 2. Heating can be performed in vacuum, in any gas atmosphere, or in a high temperature atmosphere by devising the material of the heating coil, the method of introducing current, and the shape of the coil. 3. In the case of a non-magnetic material such as ceramics, the magnetic material can be incorporated into the substrate and heated indirectly. 4. The substrate can be heated more efficiently than the conventional method. 5. The temperature control of the substrate is simple, and the gradual temperature decrease rate of the processed substrate is easy to control.
【図1】本発明の実施例の概略説明図を示す。FIG. 1 shows a schematic explanatory view of an embodiment of the present invention.
【図2】円筒形基板の側面に生成膜を形成させる場合の
説明図。FIG. 2 is an explanatory diagram of a case where a generation film is formed on the side surface of a cylindrical substrate.
【図3】円筒形基板の頭部に生成膜を形成させる場合の
説明図。FIG. 3 is an explanatory diagram in the case of forming a generation film on the head of a cylindrical substrate.
1 真空容器 2 プラズマ発生部 3 高周波コイル 4 プラズマ発生用高周波電源 5 プラズマ 6 試料投入口 7 基板 8 高周波コイル 9 ソレノイド高周波コイル 10 基板加熱用高周波電源 1 Vacuum container 2 Plasma generator 3 High frequency coil 4 High frequency power source for plasma generation 5 Plasma 6 Sample inlet 7 Substrate 8 High frequency coil 9 Solenoid high frequency coil 10 High frequency power source for substrate heating
Claims (2)
加熱し、かつ該基板を移動させながらプラズマ溶射を行
う基板へのプラズマ溶射方法。1. A plasma spraying method for a substrate, wherein the substrate is heated in a non-contact manner by high frequency induction heating, and plasma spraying is performed while moving the substrate.
て高周波誘導加熱によって該基板を傍熱的に非接触で加
熱し、かつ該基板を移動させながらプラズマ溶射を行う
絶縁体基板へのプラズマ溶射方法。2. An insulating substrate, wherein a magnetic material is brought into contact with or included in an insulating substrate to heat the substrate indirectly by non-contact by high frequency induction heating, and plasma spraying is performed while moving the substrate. Plasma spraying method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3280414A JPH0593255A (en) | 1991-10-01 | 1991-10-01 | Method for plasma spraying on substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3280414A JPH0593255A (en) | 1991-10-01 | 1991-10-01 | Method for plasma spraying on substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0593255A true JPH0593255A (en) | 1993-04-16 |
Family
ID=17624712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3280414A Pending JPH0593255A (en) | 1991-10-01 | 1991-10-01 | Method for plasma spraying on substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0593255A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008127647A (en) * | 2006-11-22 | 2008-06-05 | High Frequency Heattreat Co Ltd | Surface treatment device and method therefore |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5254628A (en) * | 1975-10-31 | 1977-05-04 | Kawasaki Heavy Ind Ltd | Film forming and fusing method |
JPS60114564A (en) * | 1983-11-26 | 1985-06-21 | Dai Ichi High Frequency Co Ltd | Surface treatment |
JPH02225653A (en) * | 1989-02-23 | 1990-09-07 | Komatsu Ltd | Plasma spraying method with high adhesive strength |
-
1991
- 1991-10-01 JP JP3280414A patent/JPH0593255A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5254628A (en) * | 1975-10-31 | 1977-05-04 | Kawasaki Heavy Ind Ltd | Film forming and fusing method |
JPS60114564A (en) * | 1983-11-26 | 1985-06-21 | Dai Ichi High Frequency Co Ltd | Surface treatment |
JPH02225653A (en) * | 1989-02-23 | 1990-09-07 | Komatsu Ltd | Plasma spraying method with high adhesive strength |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008127647A (en) * | 2006-11-22 | 2008-06-05 | High Frequency Heattreat Co Ltd | Surface treatment device and method therefore |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19960618 |