JPH058985B2 - - Google Patents
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- Publication number
- JPH058985B2 JPH058985B2 JP27378186A JP27378186A JPH058985B2 JP H058985 B2 JPH058985 B2 JP H058985B2 JP 27378186 A JP27378186 A JP 27378186A JP 27378186 A JP27378186 A JP 27378186A JP H058985 B2 JPH058985 B2 JP H058985B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- sample
- current
- excited species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 37
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001793 charged compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は有機薄膜の分析に用いて好適な薄膜分
析計に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film analyzer suitable for use in analyzing organic thin films.
最近、バイオテクノロジーをはじめとする各種
技術分野において薄膜に関する研究が進められて
いる。
Recently, research on thin films has been progressing in various technical fields including biotechnology.
それらの研究においては薄膜の物性、特性を調
べることが重要であるが、そのための分析手段と
しては、イオンマイクロアナライザー、オージエ
電子分光装置、Ｘ線光電子分光装置、赤外分光光
度計などの装置が従来から用いられている。 In these studies, it is important to examine the physical properties and characteristics of thin films, and analytical tools such as ion microanalyzers, Augier electron spectrometers, X-ray photoelectron spectrometers, and infrared spectrophotometers are used for this purpose. Traditionally used.
従来から用いられているそのような装置は、装
置構成が、大掛りで価格が高く、試料を真空中に
配置しなければならなかつたり試料の前処理が必
要であるなど測定に手間がかかることは避けられ
なかつた。
Such devices that have been used in the past have large-scale equipment configurations, are expensive, and require time-consuming measurements, such as requiring the sample to be placed in a vacuum or requiring pretreatment of the sample. was unavoidable.
本発明は上述した点に鑑みてなされたものであ
り、比較的簡単な構成で薄膜の物性、特性あるい
は厚さに関する情報を得ることのできる新規な薄
膜分析計を提供することを目的としている。 The present invention has been made in view of the above-mentioned points, and it is an object of the present invention to provide a novel thin film analyzer that can obtain information regarding the physical properties, characteristics, or thickness of a thin film with a relatively simple configuration.
この目的を達成するため、本発明の薄膜分析計
は、コロナ放電によりキヤリアガスを励起しキヤ
リアガスの励起種を生成する手段と、該励起種の
通路に配置されるコレクタ電極と、該コレクタ電
極の励起種が当る面に保持される薄膜試料と、前
記励起種生成手段とコレクタ電極との間に前記薄
膜試料に面して配置される中間電極とから構成さ
れることを特徴としている。
In order to achieve this object, the thin film analyzer of the present invention includes means for exciting a carrier gas by corona discharge to generate excited species of the carrier gas, a collector electrode disposed in a path of the excited species, and an excitation of the collector electrode. It is characterized by comprising a thin film sample held on a surface that the seeds come into contact with, and an intermediate electrode placed between the excited species generating means and the collector electrode, facing the thin film sample.
コレクタ電極に保持された薄膜試料に励起種が
当たると、薄膜表面の分子は励起種の持つエネル
ギーによりイオン化され、表面にはそのイオンと
電子が生成される。このイオンあるいは電子の量
を中間電極あるいはコレクタ電極を用いて検出す
ることにより薄膜の物性、特性あるいは厚さに関
する情報を得る。
When an excited species hits the thin film sample held on the collector electrode, molecules on the surface of the thin film are ionized by the energy of the excited species, and ions and electrons are generated on the surface. By detecting the amount of these ions or electrons using an intermediate electrode or a collector electrode, information regarding the physical properties, characteristics, or thickness of the thin film can be obtained.
以下、図面に基づき本発明の一実施例を詳説す
る。 Hereinafter, one embodiment of the present invention will be explained in detail based on the drawings.
第１図は本発明の一実施例の構成を示す概略図
である。図において１は接地電位にあるシールド
電極、２はコレクタ電極、３はコレクタ電極表面
に保持された有機薄膜試料、４は薄膜３の周辺部
表面に接触するように配置される第２コレクタ電
極、５は各電極間の絶縁を保つための絶縁体、６
は励起種を作成するための放電管、７は放電管６
と薄膜試料３との間に配置される網状の中間電極
である。
FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention. In the figure, 1 is a shield electrode at ground potential, 2 is a collector electrode, 3 is an organic thin film sample held on the surface of the collector electrode, 4 is a second collector electrode arranged so as to be in contact with the peripheral surface of the thin film 3, 5 is an insulator for maintaining insulation between each electrode, 6
is a discharge tube for creating excited species, 7 is a discharge tube 6
This is a net-shaped intermediate electrode placed between the thin film sample 3 and the thin film sample 3.
上記放電管６は筒状電極８と、キヤリアガス例
えばアルゴンを筒状電極８内に導くパイプ９と、
針状電極１０と、絶縁栓１１から構成され、電源
１２により電極８，１０間に高電圧を印加しコロ
ナ放電を生起させると、励起アルゴンAr*（励起
種）が生成される。この励起種は電荷は持たない
が比較的大きなエネルギーを持ち、キヤリアガス
の流れに乗つて筒状電極８の解放端から薄膜試料
３へ向けて流れて行く。この励起種が有機薄膜試
料（0rg）と接触すると、薄膜試料は励起種の持
つエネルギーにより下式に従つてイオン化され
る。 The discharge tube 6 includes a cylindrical electrode 8, a pipe 9 for guiding a carrier gas such as argon into the cylindrical electrode 8,
It is composed of a needle electrode 10 and an insulating plug 11, and when a high voltage is applied between the electrodes 8 and 10 by a power source 12 to generate a corona discharge, excited argon Ar * (excited species) is generated. Although this excited species does not have an electric charge, it has relatively large energy and flows from the open end of the cylindrical electrode 8 toward the thin film sample 3 along with the flow of the carrier gas. When this excited species comes into contact with the organic thin film sample (0rg), the thin film sample is ionized by the energy of the excited species according to the following equation.
Ar*＋Org→Org+＋e-＋Ar ……(1)
このようにして生成されたOrg+およびe-は以
下のような各種モードで検出することが可能であ
る。 Ar * +Org→Org + +e - +Ar ... (1) Org + and e - generated in this way can be detected in various modes as described below.
〔モードＡ：コレクタ電極２，４に負電圧Vaを
印加し、電極７に流れる電流Iaを測定する〕
このモードでは、コレクタ電極２，４にかけた
負電圧のため試料表面から飛出した電子e-を電極
７により検出することができる。この時、電圧
Vaと電流IaのVa−Ia曲線は例えば第２図のよう
に飽和特性を示す。その飽和電流Isは試料表面に
存在する物質の平均分子量に対応するので、飽和
電流を求めれば試料表面の平均分子量を求めるこ
とが可能である。[Mode A: A negative voltage Va is applied to the collector electrodes 2 and 4, and the current Ia flowing through the electrode 7 is measured.] In this mode, electrons e ejected from the sample surface due to the negative voltage applied to the collector electrodes 2 and 4 - can be detected by the electrode 7. At this time, the voltage
The Va-Ia curve of Va and current Ia exhibits saturation characteristics, as shown in FIG. 2, for example. Since the saturation current Is corresponds to the average molecular weight of the substance present on the sample surface, it is possible to determine the average molecular weight of the sample surface by determining the saturation current.
尚、そのためには、分子量既知のいくつかの化
合物を薄膜試料として平均分子量と飽和電流との
間の関係を求めておき、その関係に基づいて未知
の薄膜試料の飽和電流からその平均分子量を求め
れば良い。 In order to do this, first find the relationship between the average molecular weight and saturation current using several compounds with known molecular weights as thin film samples, and then calculate the average molecular weight from the saturation current of the unknown thin film sample based on that relationship. Good.
〔モードＢ：コレクタ電極２に負電圧Vbを印加
し、電極４に流れる電流Ibを測定する〕
このモードでは、薄膜試料表面の溜つた電子を
測定することができる。Vb−Ib曲線はモードＡ
のVa−Ia曲線と同様な飽和特性を示し、同様に
して試料表面の平均分子量を求めることが可能で
ある。[Mode B: Applying a negative voltage Vb to the collector electrode 2 and measuring the current Ib flowing through the electrode 4] In this mode, the electrons accumulated on the surface of the thin film sample can be measured. Vb-Ib curve is mode A
The average molecular weight of the sample surface can be determined in the same way.
〔モードＣ：コレクタ電極４と電極７に正電圧
Vcを印加し、コレクタ電極２に流れる電流Icを
測定する〕
このモードＣでは、電極４，７にかけた正電圧
によりコレクタ電極２にはOrg+に対応するイオ
ン電流Icが流れる。この電流Icの値はモードＡ，
Ｂにおける電子電流Ia，Ibと略同じ値になる筈で
あるが、試料の物性の膜厚によつてVc−Ic曲線
の形が若干変る。従つて、予め物性および膜厚既
知のいくつかの試料についてVc−Ic曲線の変化
を調べておけば、物性あるいは膜厚未知の試料の
Vc−Ic曲線からその試料の物性あるいは膜厚を
求めることが可能である。[Mode C: Positive voltage on collector electrode 4 and electrode 7
Apply Vc and measure the current Ic flowing through the collector electrode 2] In this mode C, an ionic current Ic corresponding to Org + flows through the collector electrode 2 due to the positive voltage applied to the electrodes 4 and 7. The value of this current Ic is mode A,
Although it should be approximately the same value as the electron currents Ia and Ib in B, the shape of the Vc-Ic curve changes slightly depending on the film thickness of the physical properties of the sample. Therefore, by examining the changes in the Vc-Ic curves for several samples whose physical properties and film thickness are known, it is possible to investigate the changes in the Vc-Ic curves of samples whose physical properties and film thickness are unknown.
It is possible to determine the physical properties or film thickness of the sample from the Vc-Ic curve.
〔モードＤ：コレクタ電極４と電極７に負電圧
Vdを印加し、コレクタ電極２に流れる電流Idを
測定する〕
このモードＤでは、薄膜試料表面や電極７の表
面で生成された電子e-のうち薄膜試料を透過して
裏面に到達したものがコレクタ電極２へ流入して
電流Idとして検出される。この電流IdをモードＢ
で測定した電流Ib（試料表面で生成された全電子
に関する情報）と比較することにより、薄膜の電
子伝導度に関する情報を得ることができる。[Mode D: Negative voltage applied to collector electrode 4 and electrode 7
Vd is applied and the current Id flowing through the collector electrode 2 is measured] In this mode D, among the electrons e - generated on the surface of the thin film sample and the surface of the electrode 7, those that have passed through the thin film sample and reached the back surface are The current flows into the collector electrode 2 and is detected as a current Id. This current Id is set to mode B
Information about the electronic conductivity of the thin film can be obtained by comparing it with the current Ib (information about the total electrons generated at the sample surface) measured at .
尚、いずれのモードにおいても、電流の測定に
はフローテイング増幅器（エレクトロメーター）
を使用し、測定したい電荷に合わせて捕集が適し
た電圧をかければ、より完全に全電流が測定でき
る。 In both modes, a floating amplifier (electrometer) is used to measure the current.
By applying a voltage suitable for collection according to the charge you want to measure, you can measure the total current more completely.
又、電極７やコレクタ電極４に印加する電圧
は、定電圧でも良いが、０←→＋Ｖ（又は−Ｖ）
の矩形波、正弦波あるいはパルスとし、電極２に
流れる電流の時間変化や位相のズレを測定すれ
ば、膜厚や膜の性質に関する情報をより正確に得
ることができる。 Further, the voltage applied to the electrode 7 and the collector electrode 4 may be a constant voltage, but may be 0←→+V (or -V).
By measuring the time change and phase shift of the current flowing through the electrode 2 using a rectangular wave, a sine wave, or a pulse, information regarding the film thickness and properties of the film can be obtained more accurately.
第３図は本発明の他の実施例を示し、コレクタ
電極４と電極７の間に更に第２の網状電極１３が
配置されている。 FIG. 3 shows another embodiment of the invention, in which a second mesh electrode 13 is further arranged between the collector electrode 4 and the electrode 7.
この実施例では第１図の実施例で説明したＡ〜
Ｄの各モードに加え、以下のような測定を行うこ
とが可能である。 In this embodiment, A to A described in the embodiment of FIG.
In addition to each mode of D, the following measurements can be performed.
即ち、電極１３に正電圧を印加しておき、更に
この電極にエタノール（アセトン等でも良い）Ｓ
を少量付けると、エタノールが励起種Ar*により
下式に従つてイオン化されてSnH+が生成される。 That is, a positive voltage is applied to the electrode 13, and ethanol (acetone etc. may also be used) S is applied to this electrode.
When a small amount of is added, ethanol is ionized by the excited species Ar * according to the formula below, producing S n H + .
Ar*＋xS→SnH+＋Sk（Ｓ−Ｈ）-＋Ar ……(2)
このSnH+が薄膜試料表面に到達すると、試料
Ｍのプロトン親和力がエタノールＳのプロトン親
和力よりも大きい場合、SnH+と試料Ｍとのプロ
トン移行反応により、下式に従つて試料のプロト
ン化分子イオン（MH+、M2H+等）が試料表面
で生成される。Ar * +xS→S n H + +S k (S-H) - +Ar ...(2) When this S n H + reaches the surface of the thin film sample, the proton affinity of sample M is greater than the proton affinity of ethanol S. , S n H + and sample M, protonated molecular ions (MH + , M 2 H +, etc.) of the sample are generated on the sample surface according to the following formula.
SnH+＋yM→MzH+＋…… ……(3)
電極７，１３，４に適当な正電圧を印加し、電
極２に流れる電流を測定すれば、試料表面で生成
されたプロトン化試料分子イオンの量に対応した
情報が得られ、薄膜試料のプロトン伝導性に関す
る情報を得ることが可能である。 S n H + +yM→M z H + +…… (3) By applying an appropriate positive voltage to electrodes 7, 13, and 4 and measuring the current flowing through electrode 2, it is possible to detect protons generated on the sample surface. Information corresponding to the amount of molecular ions in the sample can be obtained, and information regarding the proton conductivity of the thin film sample can be obtained.
尚、電極１３に負電圧を印加し、電極２に流れ
る電極を測定すれば、電極１３の表面で生成され
た負イオンが試料表面で電子を放出して流れる電
子電流を検出することができる。 Note that by applying a negative voltage to the electrode 13 and measuring the electrode flowing through the electrode 2, the negative ions generated on the surface of the electrode 13 emit electrons on the sample surface, and the flowing electron current can be detected.
又、電極４により試料表面に溜るイオン電流を
測定することもできる。 Furthermore, the ion current accumulated on the sample surface can also be measured using the electrode 4.
第４図は本発明の更に他の実施例を示し、本実
施例では中間電極７として第１図の実施例のよう
な網状電極ではなく、薄膜試料の表面に先端が近
接するように配置される針状電極を用いている。
この針状電極は先端の曲率が例えば0.1μｍ程度に
尖らせると共に、先端を除き絶縁被膜で包まれて
いる。この先端と試料表面との距離は可変とさ
れ、且つ設定された距離を保つて試料表面上で２
次元的に移動できるような移動機構により保持さ
れる。尚、針状電極は試料表面との距離のみ可変
とし、試料の方を２次元的に移動させるようにし
ても良い。 FIG. 4 shows still another embodiment of the present invention. In this embodiment, the intermediate electrode 7 is not a mesh electrode as in the embodiment of FIG. 1, but is arranged so that its tip is close to the surface of the thin film sample. A needle-like electrode is used.
The tip of this needle-like electrode has a sharp curvature of, for example, about 0.1 μm, and is covered with an insulating film except for the tip. The distance between this tip and the sample surface is variable, and the distance between the tip and the sample surface is kept constant.
It is held by a moving mechanism that can move dimensionally. Note that the needle-like electrode may be configured to change only the distance from the sample surface so that the sample is moved two-dimensionally.
なお、モードＣについて、電極４および電極７
に電圧を印加する手段と、電流を測定する手段に
ついてさらに詳しく例示説明すると、第１図、第
３図および第４図の電極４および電極７の先に、
たとえば第５図に例示したように、定電圧電源８
（市販の±０〜100V、±０〜300V程度の電源で十
分である）を接続することと、電極２の先に、エ
レクトロメーター９を接続することができる。 Note that for mode C, electrode 4 and electrode 7
To explain in more detail the means for applying a voltage and the means for measuring a current, the electrode 4 and the electrode 7 in FIGS. 1, 3, and 4 are
For example, as illustrated in FIG.
(A commercially available power supply of about ±0 to 100 V or ±0 to 300 V is sufficient) and an electrometer 9 can be connected to the tip of the electrode 2.
電流を測定する電極にエレクトロメーターを接
続することにより前述した第１図の実施例で説明
したＡ〜Ｄの各モードで全く同様に測定が行われ
る。電極４および電極２により全電流に関する情
報が、第４図の電極７によりその先端が面してい
る試料表面の微小領域のみに関する情報が夫々得
られ、電極７または試料の適宜移動させることに
より、測定領域を任意に選択することができる。 By connecting an electrometer to the electrode for measuring current, measurements can be made in exactly the same manner in each of the modes A to D described in the embodiment of FIG. 1 above. The electrodes 4 and 2 provide information about the total current, and the electrode 7 in FIG. 4 provides information about only the minute region of the sample surface facing the tip, and by appropriately moving the electrode 7 or the sample, The measurement area can be selected arbitrarily.
更に、電極７または４に０←→＋Ｖまたは＋Ｖ
←→−Ｖのように変化する矩形波電圧を印加し、
電極２に流れる電流の時間変化や位相のずれを測
定しても良い。 Furthermore, 0←→+V or +V is applied to electrode 7 or 4.
Apply a square wave voltage that changes like ←→-V,
The time change or phase shift of the current flowing through the electrode 2 may also be measured.
すべてのモードについて言えることであるが、
電極にかける電圧の極性を逆にすることにより、
(2)式における負イオンについても測定することが
できる。 This is true for all modes,
By reversing the polarity of the voltage applied to the electrodes,
The negative ions in equation (2) can also be measured.
各電流の測定に当つては、電極７と電極４、電
極７と電極２あるいは電極４と電極２のように２
つの電極に流入する電流を夫々同時に測定し比較
するようにすることが、イオンや電子の挙動の遅
い、膜抵抗、表面電流などの識別をより正確に行
うことができるという点で好ましい。 When measuring each current, two electrodes are used, such as electrode 7 and electrode 4, electrode 7 and electrode 2, or electrode 4 and electrode 2.
It is preferable to measure and compare the currents flowing into the two electrodes at the same time, since this allows for more accurate identification of slow behavior of ions and electrons, membrane resistance, surface current, and the like.
尚、各実施例において、電極１にヒータを埋め
込むなどにより試料加熱手段を設け、試料の温度
を変化させて電流の変化を調べることも、薄膜試
料の温度依存性など熱的性質（転移点、融点な
ど）を知る上で重要な意味を持つ。 In each example, it is also possible to provide a sample heating means such as by embedding a heater in the electrode 1 and change the temperature of the sample to examine changes in current. It has important meaning in knowing the melting point, etc.).
以上詳述した如く、本発明によれば、励起種に
よつて直接あるいは間接的に薄膜試料表面の分子
をイオン化い、その結果表面に発生した電子ある
いはイオン量に関する情報を各電極から得るとい
う簡単な構成で、膜厚、電子伝導性、プロトン伝
導性、分子量等試料の特性を分析することができ
る薄膜分析計が実現される。
As detailed above, according to the present invention, molecules on the surface of a thin film sample are directly or indirectly ionized by excited species, and information regarding the amount of electrons or ions generated on the surface as a result is obtained from each electrode. With this configuration, a thin film analyzer that can analyze sample characteristics such as film thickness, electron conductivity, proton conductivity, and molecular weight is realized.
第１図は本発明の一実施例の構成を示す概略
図、第２図は電圧一電流特性の一例を示す図、第
３図及び第４図は夫々本発明の他の実施例を示す
概略図である。第５図は、本発明の電圧印加の手
段と電流測定手段の一例を示した概略図である。
１：シールド電極、２，４：コレクタ電極、
３：有機薄膜試料、５：絶縁体、６：放電管、
７：中間電極、８：定電圧電源、９：エルクトロ
メーター。
Fig. 1 is a schematic diagram showing the configuration of one embodiment of the present invention, Fig. 2 is a diagram showing an example of voltage-current characteristics, and Figs. 3 and 4 are schematic diagrams showing other embodiments of the present invention. It is a diagram. FIG. 5 is a schematic diagram showing an example of voltage application means and current measurement means of the present invention. 1: Shield electrode, 2, 4: Collector electrode,
3: organic thin film sample, 5: insulator, 6: discharge tube,
7: Intermediate electrode, 8: Constant voltage power supply, 9: Elctrometer.
Claims (1)
リアガスの励起種を生成する手段と、該励起種の
通路に配置されるコレクタ電極と、該コレクタ電
極の励起種が当る面に保持される薄膜試料と、前
記励起種生成手段とコレクタ電極との間に前記薄
膜試料に面して配置される中間電極及び前記コレ
クタ電極と中間電極との間に配置される所定電圧
を印加する手段並びに両電極間に流れる電流を測
定する手段とから構成されることを特徴とする薄
膜分析計。 ２ 前記中間電極は網状電極である特許請求の範
囲第１項記載の薄膜分析計。 ３ 前記中間電極は針状電極であり、該針状電極
の先端が薄膜試料に近接配置される特許請求の範
囲第１項記載の薄膜分析計。[Scope of Claims] 1. A means for exciting a carrier gas by corona discharge to generate excited species of the carrier gas, a collector electrode disposed in a path of the excited species, and a collector electrode held on a surface of the collector electrode that contacts the excited species. a thin film sample, an intermediate electrode disposed between the excited species generating means and the collector electrode facing the thin film sample, a means for applying a predetermined voltage disposed between the collector electrode and the intermediate electrode, and both A thin film analyzer comprising: means for measuring the current flowing between the electrodes. 2. The thin film analyzer according to claim 1, wherein the intermediate electrode is a mesh electrode. 3. The thin film analyzer according to claim 1, wherein the intermediate electrode is a needle-like electrode, and a tip of the needle-like electrode is placed close to the thin film sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27378186A JPS63127155A (en) | 1986-11-17 | 1986-11-17 | Thin film analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27378186A JPS63127155A (en) | 1986-11-17 | 1986-11-17 | Thin film analyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63127155A JPS63127155A (en) | 1988-05-31 |
| JPH058985B2 true JPH058985B2 (en) | 1993-02-03 |
Family
ID=17532487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27378186A Granted JPS63127155A (en) | 1986-11-17 | 1986-11-17 | Thin film analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63127155A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69111651T2 (en) * | 1990-03-27 | 1996-04-18 | Ibm | Elimination of particle generation in a modified clean room corona air ionizer. |
| RU2656129C1 (en) * | 2017-06-14 | 2018-05-31 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" | Method of layer-by-layer analysis of thin films |
-
1986
- 1986-11-17 JP JP27378186A patent/JPS63127155A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63127155A (en) | 1988-05-31 |
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