JPH0587130B2 - - Google Patents
Info
- Publication number
- JPH0587130B2 JPH0587130B2 JP62076384A JP7638487A JPH0587130B2 JP H0587130 B2 JPH0587130 B2 JP H0587130B2 JP 62076384 A JP62076384 A JP 62076384A JP 7638487 A JP7638487 A JP 7638487A JP H0587130 B2 JPH0587130 B2 JP H0587130B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- plasma
- reaction chamber
- plasma vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 22
- 238000005192 partition Methods 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 13
- 239000012495 reaction gas Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076384A JPS63244731A (ja) | 1987-03-31 | 1987-03-31 | プラズマ気相成長装置 |
| US07/166,689 US4920917A (en) | 1987-03-18 | 1988-03-11 | Reactor for depositing a layer on a moving substrate |
| DE3808974A DE3808974A1 (de) | 1987-03-18 | 1988-03-17 | Anordnung zum abscheiden einer materialschicht auf einem bewegten traeger |
| FR8803589A FR2613535B1 (fr) | 1987-03-18 | 1988-03-18 | Reacteur permettant de faire deposer une couche sur un substrat mobile pour la fabrication d'un dispositif semiconducteur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076384A JPS63244731A (ja) | 1987-03-31 | 1987-03-31 | プラズマ気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244731A JPS63244731A (ja) | 1988-10-12 |
| JPH0587130B2 true JPH0587130B2 (fr) | 1993-12-15 |
Family
ID=13603840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62076384A Granted JPS63244731A (ja) | 1987-03-18 | 1987-03-31 | プラズマ気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244731A (fr) |
-
1987
- 1987-03-31 JP JP62076384A patent/JPS63244731A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63244731A (ja) | 1988-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4920917A (en) | Reactor for depositing a layer on a moving substrate | |
| US5968274A (en) | Continuous forming method for functional deposited films and deposition apparatus | |
| EP0041773B1 (fr) | Production de cellules solaires | |
| US4519339A (en) | Continuous amorphous solar cell production system | |
| KR100269929B1 (ko) | 박막 제조방법 및 증착장치 | |
| JPS6243554B2 (fr) | ||
| US4462333A (en) | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus | |
| IE830541L (en) | Photovoltaic devices. | |
| US4537795A (en) | Method for introducing sweep gases into a glow discharge deposition apparatus | |
| JPH0468390B2 (fr) | ||
| WO2002058121A1 (fr) | Procede et dispositif pour depot chimique en phase vapeur assiste par plasma | |
| US4520757A (en) | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus | |
| EP0119103A2 (fr) | Dispositif pour introduire et diriger un gaz réactif | |
| EP2256782B1 (fr) | Source de dépôt de plasma et procédé pour déposer des films minces | |
| US4742012A (en) | Method of making graded junction containing amorphous semiconductor device | |
| EP3811395B1 (fr) | Source de plasma et son procédé de fonctionnement | |
| JPH0587130B2 (fr) | ||
| JPS5972722A (ja) | 非均質膜のデポジシヨンを防止する基板シ−ルド | |
| US20060219170A1 (en) | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency | |
| US20040250763A1 (en) | Fountain cathode for large area plasma deposition | |
| JPH0719912B2 (ja) | 薄膜半導体の製造装置 | |
| JP2771363B2 (ja) | 機能性堆積膜の連続的製造装置 | |
| JPH0227775A (ja) | 太陽電池の製造装置 | |
| JPS5968925A (ja) | グロ−放電デポジシヨン装置のバフルシステム | |
| JP3403039B2 (ja) | プラズマｃｖｄ法による薄膜半導体の作製装置及び作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |