JPH0586476B2 - - Google Patents
Info
- Publication number
- JPH0586476B2 JPH0586476B2 JP62080963A JP8096387A JPH0586476B2 JP H0586476 B2 JPH0586476 B2 JP H0586476B2 JP 62080963 A JP62080963 A JP 62080963A JP 8096387 A JP8096387 A JP 8096387A JP H0586476 B2 JPH0586476 B2 JP H0586476B2
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- target
- substrate
- ion
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 88
- 239000002245 particle Substances 0.000 claims description 48
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 30
- 238000010884 ion-beam technique Methods 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 48
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- -1 argon ions Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8096387A JPS63247367A (ja) | 1987-04-03 | 1987-04-03 | イオンビ−ムスパツタ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8096387A JPS63247367A (ja) | 1987-04-03 | 1987-04-03 | イオンビ−ムスパツタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63247367A JPS63247367A (ja) | 1988-10-14 |
| JPH0586476B2 true JPH0586476B2 (fr) | 1993-12-13 |
Family
ID=13733168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8096387A Granted JPS63247367A (ja) | 1987-04-03 | 1987-04-03 | イオンビ−ムスパツタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63247367A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2745010B1 (fr) * | 1996-02-20 | 1998-06-12 | Serole Michelle Paparone | Cible de pulverisation cathodique de forme tubulaire ou derivee, faite de plusieurs plaques longitudinales et sa methode de fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174459A (en) * | 1981-04-21 | 1982-10-27 | Namiki Precision Jewel Co Ltd | Formation of thin film |
| JPS6025212A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 磁性合金膜の製造方法 |
-
1987
- 1987-04-03 JP JP8096387A patent/JPS63247367A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174459A (en) * | 1981-04-21 | 1982-10-27 | Namiki Precision Jewel Co Ltd | Formation of thin film |
| JPS6025212A (ja) * | 1983-07-21 | 1985-02-08 | Hitachi Ltd | 磁性合金膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63247367A (ja) | 1988-10-14 |
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