JPH0582934A - Terminal connection structure, terminal connection method, manufacture of conductive particle, and manufacturing board - Google Patents

Abstract

PURPOSE:To prevent short circuits from occurring by arranging conductive particles in a state of complete separation from one another. CONSTITUTION:After a particle processing board 20 provided with quadrangular pyramid recesses 10 is prepared, a film (material film) 12 made of a conductive material is deposited over its surface. Upon heat dissolution of this material film 12, the conductive material collects in every recess 10 into spheres and forms conductive particles 11 upon cooling. Next, superposing a first electronic component board 1 on the surface of the particle processing board 20 causes conductive particles 11 to transfer to the first electronic component board 1. Then, positioning and adhering the first electronic component board 1 to the second electronic component board 2 drives terminals 4, 5 of both into an electrical connection via conductive particles 11. A terminal connection structure formed in this way comes into a state that terminal 4 of the first electronic component and terminals 5 of the second electronic component are connected by the conductive particles 11 arranged in a state of separation from one another.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a terminal connection structure and terminal connection used for electrically connecting terminals of a substrate such as a liquid crystal panel or a thermal printer head to terminals of a semiconductor element for driving the same. The present invention relates to a method, a method for producing conductive particles used in carrying out these methods, and a substrate for producing conductive particles.

[0002]

2. Description of the Related Art FIG. 15 shows a conventional terminal connection structure, in which reference numeral 1 is a substrate of one electronic component, and reference numeral 2 is a substrate of the other electronic component. Terminals 4 and 5 are provided on the surfaces of the substrates 1 and 2. Between these substrates 1 and 2,
An adhesive layer 7 in which conductive particles 6 are dispersed in the adhesive is provided. The terminals 4 and 5 are electrically connected through the conductive particles 6 of the adhesive layer 7.

In order to form this terminal connection structure, an adhesive in which the conductive particles 6 are dispersed is applied to the substrate 1, and then the other substrate 2 is pressed so that the terminals 4 and 5 of both substrates 1 and 2 are connected to each other. The conductive particles 6 were contacted.

[0004]

In the connection structure as described above, the conductive particles 6 may be aggregated as shown in FIG. 16, and the terminals adjacent to each other via the aggregated conductive particles 6 may be present. Since a short circuit occurs between 4, 4 and 5, 5, there is a problem that it is difficult to narrow the electrode pitch.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a terminal connection structure and a terminal connection method in which a short circuit does not occur.

[0006]

A terminal connection structure according to a first aspect of the present invention is a connection structure characterized in that all conductive particles are arranged in a state of being separated from each other.

According to a second aspect of the present invention, in the method of connecting terminals, a film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface thereof, and the film is heated and melted to form a melt. By forming spherical particles by surface tension and then cooling to form conductive particles in the respective concave portions of the conductive particle manufacturing substrate, and then superimposing the first electronic component on the surface of the conductive particle manufacturing substrate. Characterized in that the conductive particles are transferred to at least the terminal-provided portion of the first electronic component, and then the first electronic component and the second electronic component are superposed to electrically connect the terminals to each other. And the method.

According to a third aspect of the present invention, there is provided a method for producing conductive particles, wherein a film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface, and then the film is melted by heating. The method is characterized in that after the material is made spherical by surface tension and then cooled, conductive particles are generated in each recess of the substrate for manufacturing conductive particles.

A substrate for producing conductive particles according to a fourth aspect of the present invention has fine recesses formed on its surface.

It is desirable that the substrate for producing conductive particles (hereinafter abbreviated as a substrate for producing particles) has poor wettability with the melt of the conductive material formed on the surface thereof.

The shape of the recess of the substrate for producing particles is not limited, but it is desirable that the recess gradually narrows toward the deep portion. A substrate for producing particles having such a recess is, for example, a silicon crystal of (100) plane or (11) plane.
It can be manufactured by forming a mask having openings of a predetermined pattern on the surface of the (0) plane silicon crystal and then anisotropically etching it using a KOH aqueous solution, an ammonia aqueous solution, hydrazine or the like.

The recesses of the particle production substrate may all have the same shape, but it is advisable to provide recesses having different opening areas and recesses having different depths as needed.

The opening area and depth of the concave portion of the particle manufacturing substrate and the thickness of the conductive material film (hereinafter referred to as material film) formed on the surface of the particle manufacturing substrate are attached to electronic parts. The conductive particles are set so as to protrude from the concave portion of the particle manufacturing substrate by about several μm.

As a film forming method, a vapor deposition method, a sputtering method,
Various methods such as a gas deposition method for spraying ultrafine particles, an electrolytic plating method, and an electroless plating method can be used alone or in combination.

As the conductive material, various materials such as gold, nickel and solder alloy which have been conventionally used as a material for conductive particles can be used.

[0016]

According to the terminal connection structure of the first aspect, since all the conductive particles are arranged in a state of being separated from each other, there is no short circuit between the adjacent terminals via the conductive particles.

In the method of connecting terminals according to the second aspect of the invention, a film is formed on the surface of the substrate for producing particles having fine recesses formed on the surface thereof with a material which becomes conductive particles, and then the film is heated and melted to form a melt. Are spheroidized by surface tension and then cooled to generate conductive particles in the recesses of the particle manufacturing substrate, and then the surface of the particle manufacturing substrate is superposed on the first electronic component to form conductive particles. Are transferred to the first electronic component, so that the conductive particles are kept in a state of being separated from each other by the walls between the recesses of the particle manufacturing substrate.
Is transferred to the electronic components of.

According to a third aspect of the present invention, there is provided a method for producing conductive particles, wherein a film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface, and then the film is heated and melted. Since the method is to generate conductive particles in each recess of the substrate for producing conductive particles by cooling after the melt is spheroidized by surface tension, each recess of the substrate for producing particles is dependent on the opening area of the recess. A quantity of conductive material is deposited and becomes conductive particles. Therefore, the size of the conductive particles is determined by the amount of the conductive material. Therefore, according to this method for producing conductive particles, conductive particles having the same diameter can be produced if the opening area of the recess and the thickness of the conductive material are the same.

Since the substrate for producing conductive particles according to claim 4 has fine recesses formed on its surface, the method according to claims 2 and 3 can be carried out by using this substrate. The terminal connection structure can be formed.

The substrate for producing conductive particles according to claim 5 is provided with a plurality of types of recesses having different opening areas. Therefore, when a conductive material is formed on the substrate for producing particles, the conductive material is laminated in each recess. There is a difference in the amount of the conductive material. As a result, there is a difference in the size of the conductive particles formed in the recesses, which in turn causes a difference in the height of protrusion from the surface of the particle manufacturing substrate to the top of the conductive particles.

Since the substrate for producing conductive particles according to claim 6 is provided with a plurality of kinds of recesses having different depths, when a conductive material is deposited on the substrate for producing particles, the conductive material formed in the deep recesses is formed. The characteristic particles will be recessed by that amount and will be located in the concave portion. As a result, there is a difference in the protrusion height from the surface of the particle manufacturing substrate to the top of the conductive particles formed in each recess.

[0022]

The terminal connecting structure, the terminal connecting method, the conductive particle manufacturing method and the conductive particle manufacturing substrate of the present invention will be described below with reference to the drawings. The same components as those of the conventional example are designated by the same reference numerals to simplify the description.

(Embodiment 1) FIG. 1 shows each step of the terminal connecting method of the present invention, in which reference numeral 20 shows a particle production substrate. On the surface of the particle production substrate 20, quadrangular pyramidal recesses 10 as shown in FIG. 2 are provided in a grid pattern as shown in FIG.

The substrate 20 for producing particles as described above is (10
It can be prepared by covering the surface of the (0) plane silicon crystal with a mask having square openings provided in a predetermined pattern and anisotropically etching it using a KOH aqueous solution or the like. The surface of the particle manufacturing substrate 20 is treated so as to have poor wettability with a melt of a conductive material to be deposited later.

After the particle production substrate 20 is prepared in this way, in this terminal connection method, a solder alloy is vapor-deposited on the surface of the particle production substrate 20 and, as shown in FIG. A film 12 (hereinafter abbreviated as material film) is formed.

After forming the material film 12 in this way, the material film 12 is heated and melted. Then the molten conductive material
The concave portions 10 gather together and are made spherical by surface tension. When this is cooled, as shown in FIG.
The conductive particles 11 are produced for each.

The size of the conductive particles 11 is determined by the material film 1
2 is determined by the thickness of the material film 12, the material film 12 is formed to have an appropriate thickness calculated as described below, and the conductive particles 11 are removed from the surface of the particle manufacturing substrate 20 as shown in FIG. It is projected by several μm.

After the conductive particles 11 are generated in the respective recesses 10 in this manner, in this terminal connection method, as shown in FIG. 1C, the surface of the particle manufacturing substrate 20 is covered with the first electronic component. Substrate 1 is overlaid. The adhesive 23 is applied in advance to the surface of the substrate 1 of the first electronic component. When the substrate 1 of the first electronic component is superposed on the particle production substrate 20 in this manner, the conductive particles 11 are formed as shown in FIG.
Moves to the substrate 1 of the first electronic component.

Thereafter, as shown in FIG. 1 (e), the first
When the substrate 1 of the electronic component and the substrate 1 of the second electronic component are aligned and bonded to each other, the terminals 4 and 5 are electrically connected to each other through the conductive particles 11.

In the terminal connection structure thus formed, the terminals 4 of the first electronic component and the terminals 5 of the second electronic component are connected by the conductive particles 11 arranged in a state of being separated from each other. It will be in a state of being.

Next, the relationship between the size of the concave portion 10 of the particle manufacturing substrate 20 as described above, the thickness of the material film, and the protruding size of the conductive particles will be described in detail.

The concave portion 10 of the substrate 20 for particle production, which is manufactured by forming a mask having a square opening on a wafer of (100) surface and anisotropically etching it,
It is a quadrangular pyramid whose angle θ formed by the bottom surface and the slope is 54.7 degrees. Assuming that the spherical conductive particles 11 having a radius R are formed in the concave portion 10, the protruding height H of the formed conductive particle 11 is defined by L being the length of one side of the opening of the concave portion 10. In this case, it is given by the following equation (1).

[0033]

[Equation 1]

On the other hand, the flat substrate shown in FIG.
When the material film 12 is formed on the substrate in which the recesses 10 are formed as shown in (b) by the vapor deposition method under the same conditions, the amount of metal (Vm) formed in the recesses 10, that is, the opening is L × L. The amount (Vm) of metal deposited in the square recess 10 is the amount of metal deposited in the L × L square range of the flat substrate shown in FIG. 4A (thickness × area = tL). ^It is considered to be equal to ² ).
This is because the amount of metal passing through the L × L opening is equal under the same conditions.

[0035] Assuming that the material film 12 formed on the inner surface of the recess 10 becomes all the conductive particles 11, the volume Vb of the conductive particles 11 (= 4πR ^3/3) is formed on the inner surface of the recess 10 It is equal to the metal amount Vm (= tL ² ) of the material film 12. Therefore, the following expression (2) is established.

[0036]

[Equation 2]

Using the equation (2), the equation (1) can be rewritten as the following equation (3).

[0038]

[Equation 3]

From this equation (3), it is understood that the protruding height H of the conductive particles 11 is determined by the thickness t of the formed material film 12 and the length L of the side of the opening of the recess 10.
By substituting t and L into the equation (3) for calculation, the results shown by the lines a, b, and c in FIG. 5 are obtained.

Examining this drawing, for example, the length of one side of the recess 10 formed in the particle manufacturing substrate 20 is L = 10 μm.
In the case of m, the material film 12 is formed to have a thickness of 1.1 μm so that the conductive particles 11 are formed on the substrate 20 for particle production.
It can be seen that +1 μm can be projected from the surface of the.

From this fact, when the material film 12 is formed to have an appropriate thickness, the conductive particles 11 are projected from the particle manufacturing substrate, and in this state, the electronic components are stacked on the particle manufacturing substrate 20 to make the conductive particles 11 conductive. It can be seen that the particles 11 can be transferred to electronic components.

According to the terminal connection structure of this embodiment, since the conductive particles 11 are all arranged in a state of being separated from each other, the terminals 4, 4, 5 and 5 which are adjacent to each other via the conductive particles 11 are connected. There is no short circuit. Therefore, according to this terminal connection structure, the terminals 4 can be arranged at a narrow pitch and high-density mounting is possible.

Further, in the terminal connecting method of this embodiment, the particle production substrate 20 having the fine recesses 10 formed in a predetermined arrangement on the surface is prepared, and then the material film 12 is formed on the surface of the particle production substrate 20. The conductive particles 1 are formed in each of the recesses 10 of the particle-producing substrate by forming the film 12, heating and melting the film 12 to make the melt spherical by surface tension, and then cooling.
1 is generated, and then the first electronic component is superposed on the surface of the particle production substrate 20 to form the conductive particles 1
Since 1 is transferred to the first electronic component, the conductive particles 11 are transferred to the first electronic component while being kept separated by the walls 10a between the recesses 10 of the particle manufacturing substrate 20. As a result, according to this terminal connection method, the conductive particles 11 are transferred to the first electronic component in a predetermined arrangement without being aggregated. Therefore, according to this terminal connection method, even if the terminals 4 and 5 are arranged at a narrow pitch, it is possible to prevent short-circuiting between the adjacent terminals 4, 4 and 5, 5 through the conductive particles 11 and to realize high-density mounting. It will be possible.

Further, according to the method of manufacturing the conductive particles of this embodiment, the material film 12 is formed on the surface of the particle manufacturing substrate 20 having the fine recesses 10 formed on the surface thereof, and the film 12 is heated and melted. Since the conductive material 11 is generated in each recess 10 of the particle production substrate 20 by making the melt spherical by surface tension and then cooling, the opening area of the recess 10 is formed in each recess 10 during film formation. According to the above, the conductive material is laminated in an amount corresponding to, and this becomes the conductive particles 11. Therefore, according to this method for producing conductive particles, if the opening areas of the recesses 10 are the same, the conductive particles 11 having the same diameter are produced. Therefore, according to this method for producing conductive particles, it is possible to produce conductive particles 11 having a uniform particle size.

Further, the substrate 20 for particle production of this embodiment is
Since the recesses 10 having the same shape are provided in a grid pattern, the conductive particles 11 can be manufactured in a state where they are arranged at a uniform density.

(Embodiment 2) FIG. 6 shows the steps of a second embodiment of the terminal connecting method of the present invention. The same components as those in the above embodiment are designated by the same reference numerals and the description thereof is simplified. Turn into.

In the terminal connecting method of this example, a substrate for particle production 20 having a small concave portion 101 and a large concave portion 102 is used. The particle manufacturing substrate 20 is
A small square opening and a side twice as long as the side of the small square are formed in the same (100) plane silicon crystal as that used for manufacturing the particle manufacturing substrate 20 of Example 1. It can be manufactured by anisotropically etching after forming a mask provided with a square opening having. The large recess 102 formed in this manner has a small length and depth on one side of the opening.
The length of one side is twice the depth.

The small concave portion 101 and the large concave portion 102 are arranged as shown in FIG. That is, a small concave portion 101 is arranged at a position corresponding to a portion where the terminal 4 of the first electronic component described later is present, and a large concave portion 102 is arranged at other portions.
To place.

As shown in FIG. 6A, a conductive material is vapor-deposited on the particle manufacturing substrate 20 to form a material film 12. Then, a conductive material is vapor-deposited on each of the recesses 101 and 102 in an amount proportional to the area of each opening.

After that, when the material film 12 is melted, the melted conductive material becomes spherical due to its own surface tension, and the conductive particles 111, 102 are formed in the recesses 101, 102 as shown in FIG. 6B. 112 is formed. Of the conductive particles 111 and 112, the top of the conductive particles 112 formed in the large recess 101 is located at a lower position than that of the conductive particles 111 formed in the small recess 102 because the recess 102 is deep.

As shown in FIG. 5, for example, a large recess 10
2 is the side length L = 20 μm, and the small concave portion 101 is L =
When the material film 12 is 10 μm thick and the thickness t is 1.1 μm, the conductive particles 11 are formed in the large recesses 102.
2 has a protrusion height H = -1 μm, and has a small concave portion 101.
Then, it becomes +1 μm.

Next, as shown in FIG.
As shown in (c), when the first electronic components are aligned and superposed, the conductive particles 1 present in the small concave portion 101
11 adheres to the substrate 1 of the first electronic component. As described above, since the small concave portion 101 is arranged at the position corresponding to the terminal 4, the conductive particles 111 are formed as shown in FIG.
Adheres only to the portion of the substrate 1 where the terminals 4 are present.

After that, when the second electronic component is overlaid on the first electronic component, the terminals 4 and 5 are connected to each other by the conductive particles 1.
It can be connected via 11.

In the terminal connection structure thus formed, the conductive particles 111 are densely arranged in the portions of the terminals 4 and 5, and the conductive particles 111 are not present in the other portions.

In the terminal connection structure of this embodiment, the conductive particles 111 are densely arranged in the portions of the terminals 4 and 5 as described above, and the conductive particles 111 are not present in the other portions.
It is possible to reliably prevent a short circuit between the adjacent terminals 4, 4 and 5, 5.

In this embodiment, since the particle manufacturing substrate 20 provided with the small recesses 101 and the large recesses 102 having different depths is used, the conductive particles 111 formed in the shallower recesses 101 are formed. The conductive particles 112 formed in the large concave portion 102 are projected more than the conductive particles 112. In this state, the conductive particles 111 are provided at the places where the smaller concave portions 101 are provided by stacking electronic components on the particle manufacturing substrate 20.
Only can be transcribed. Therefore, in this embodiment, the conductive particles 111 can be arranged only at a desired position of the first electronic component.

(Embodiment 3) FIG. 8 shows a third embodiment of the substrate for producing conductive particles of the present invention. This particle manufacturing substrate 20 is provided with a recess 10 having a square opening and a recess 103 having a rectangular opening. As shown in FIG. 9, the overall shape of the recess 103 is substantially inverted roof roof-shaped recessed shape. FIG. 9A is a plan view of the concave portion 103 formed on the surface, and its AA cross section is shown in FIG.
9B and a cross section taken along line BB are shown in FIG. This recess 1
The short side of the opening of 03 is the same length as one side of the square recess 10. The long side of the recess 103 has a square recess 1
The length of one side of 0 is twice. On the other hand, the recesses 10 and 103 have the same depth.

The substrate 20 for producing particles as described above is (10
It can be manufactured by forming a mask in which rectangular openings and square openings are provided in a predetermined arrangement in the silicon crystal of the (0) plane and anisotropically etching.

The protruding height H of the conductive particles 11 thus formed in the recess 103 having the rectangular opening is as follows.
When the length of the short side of the opening is defined as l, it is given by the following equation (4).

[0060]

[Equation 4]

Further, in the concave portion 103 of the substrate 20 for producing particles of this embodiment, since the length of the long side of the opening is 2 l, the opening area is 1 × 2 l. Therefore, the amount of metal of the material film 12 formed in the recess 103 is 2tl ^2, and therefore the recess 10
Volume Vb (= 4πr ³ / of the conductive particles 11 formed in the
3) can be expressed by the following equation (5).

[0062]

[Equation 5]

When the above equation (4) is rewritten using this equation (5), the following equation (6) is obtained.

[0064]

[Equation 6]

When the relation between t, l and H is calculated from the equation (6), the results shown by the lines d, e and f in FIG. 5 are obtained.

From FIG. 5, the recess 10 having a rectangular opening is formed.
It can be seen that in the case of 3, the protruding height H of the conductive particles 11 is larger than that in the case of the square recess 10. For example, when the thickness (t) of the material film 12 is 0.8 μm, the opening is 1
In the 0 × 20 μm rectangular recess 103, the conductive particles 1
The protrusion height H of 1 is +2 μm, and the opening is 20 × 20
The protrusion height H of the square shape of μm is −3 μm.

Also in the particle manufacturing substrate 20 of this embodiment, the conductive particles 11 can be arranged at a desired position of the electronic component as in the particle manufacturing substrate 20 of the embodiment 2, and in addition to this embodiment. In the particle manufacturing substrate 20, the two types of recesses 10, 103 having the same depth but different opening areas are used.
Therefore, when the material film 12 is formed on the particle manufacturing substrate 20, a larger amount of the conductive material is stacked in the recess 103 having a large opening area. As a result, if the material film 12 is melted to form the conductive particles 11, the conductive particles 11 formed in the recess 103 having a large opening area have a considerably large particle size. Since the depths of the recesses 10 and 103 are the same, the difference in height between the conductive particles 11 formed in the recess 103 having a large opening area and the conductive particles 11 formed in the recess 10 having a small opening area is the same as in Example 2. It will be bigger than the case. Therefore, in the particle manufacturing substrate 20, the unexpected conductive particles 11, that is, the conductive particles 11 formed in the concave portion 10 having a small opening are the first.
There is an advantage that it can be surely prevented from adhering to the electronic components.

(Embodiment 4) FIG. 10 shows an essential portion of a fourth embodiment of the substrate for producing conductive particles of the present invention. FIG. 10A is a plan view of the recess 104 formed on the surface, and a CC cross section thereof is shown in FIG. 10B and a DD cross section thereof is shown in FIG. 10C.

The grain manufacturing substrate 20 is manufactured by forming a mask having a diamond-shaped opening in a (110) plane silicon crystal and performing anisotropic etching.

The concave portion 104 of the particle manufacturing substrate 20 is
As shown in FIG. 11, the diamond has a bottom surface 29 that gradually descends from a pair of opposite corners of the rhombus toward a diagonal line connecting the other pair of opposite corners, and each side of the rhombus opening from the bottom surface 29. The side surface 30 extending to is a vertical surface.

When the conductive particles 11 are manufactured using the particle manufacturing substrate 20 of this embodiment, the height H at which the conductive particles 11 project from the surface of the substrate 20 can be calculated as follows.

When the length of the short diagonal line of the opening of the recess 104 is L, the long side is 2 ^1/2 × L. Therefore, the area A of the opening of the recess 104 is given by the following equation (7).

[0073]

[Equation 7]

When the film is formed on the particle manufacturing substrate 20 under the condition that the film thickness t is formed on the plane, the amount of metal film formed on the area A of the plane is V ₀ = A × T, The amount V ₁ of metal deposited in the recess 104 having the opening area A is equal. Therefore, under the above film forming conditions, the volume V ₂ of the conductive particles 11 is V ₂ = V ₁ = V ₀ = A · t.

[0075] When the conductive particles 11 is assumed to be perfect sphere of radius R, since it is _{A · t = V 2 = 4πR} 3/3,
The following expression (8) is established.

[0076]

[Equation 8]

On the other hand, from FIG. 10 (b), the protruding height H of the conductive particles 11 is H = R '+ RD.

In this particle manufacturing substrate 20, the depth D of the recess 104 is L / 2, and the distance R ′ from the center of the conductive particle 11 to the deepest part of the recess 104 is R / cos θ. ) Formula holds. In the particle manufacturing substrate 20, the angle θ formed by the surface of the substrate 20 and the bottom surface 29 is 3
It is 5.26 degrees.

[0079]

[Equation 9]

From the above equations (8) and (9), the relationship between the thickness t for depositing the conductive material, the protruding height H of the conductive particles 11 and the length L of the short diagonal line of the opening is obtained. It becomes like FIG.

The particle production substrate 20 of this embodiment can obtain the same effects as the particle production substrate 20 of the embodiment 1, and the concave portion 104 is vertical in the particle production substrate 20 of this embodiment. Since it is surrounded by the side surface 30, when the conductive particles 11 are manufactured using this substrate 20, there is an advantage that the molten conductive materials in the adjacent recesses 104 are unlikely to bond with each other.

(Embodiment 5) FIG. 13 shows steps of another embodiment of the method for producing conductive particles of the present invention.

In this embodiment, as the particle production substrate 20, a surface of a substrate 26 made of a conductor or an insulator is used.
A conductor layer 27 having poor wettability with a melt of a conductive material to be vapor-deposited later, for example, a conductor layer 27 made of indium tin oxide.
Etc., and an insulating film 28 having poor wettability with the melt of the conductive material is formed on the insulating film 28.
The recess 10 is formed by etching. The conductor layer 27 is exposed at the bottom of the recess 10.

In the method for producing conductive particles of this example,
First, the particle-producing substrate 20 is immersed in an electroplating bath and the conductor layer 27 is energized to deposit metal in the recesses 10 to form the material film 12 in each recess 10 as shown in FIG. 13B. To form.

Then, when the particle manufacturing substrate 20 is heated to melt the material film 12 in each recess 10 and then cooled, the molten conductive material becomes spherical due to the surface tension, and FIG.
As shown in (c), conductive particles 11 are formed in each recess 10.

The same effect as in Example 1 can be obtained by the method for producing conductive particles of this example.

(Embodiment 6) FIG. 14 shows a sixth embodiment of the substrate for producing conductive particles of the present invention.

In this particle manufacturing substrate 20, an insulating film 28 is provided on the surface of the substrate 26 for forming the wall portions 10a for partitioning the recesses 10, and the conductor layer 2 is formed over the entire surface thereof.
7 are formed.

By using this particle manufacturing substrate 20, the conductive particles 11 can be manufactured in the same manner as in Example 5.

[0090]

As described above, the terminal connection structure of the present invention is characterized in that the conductive particles are all arranged in a state of being separated from each other. According to such a terminal connection structure, adjacent terminals are not short-circuited via the conductive particles. Therefore, according to this terminal connection structure, the terminals can be arranged at a narrow pitch, which enables high-density mounting.

According to a second aspect of the present invention, there is provided a terminal connecting method, wherein a film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface, and then the film is heated and melted to melt Are spheroidized by surface tension and then cooled to form conductive particles in the recesses of the conductive particle manufacturing substrate, and then the first electronic component is superposed on the surface of the conductive particle manufacturing substrate. First conductive particles by
Move to at least the part of the electronic component where the terminal is provided,
Then, the second electronic component is superposed on the first electronic component and their terminals are electrically connected to each other through the conductive particles. Such claim 2
According to the terminal connection method of (1), the conductive particles are transferred to the electronic component while maintaining the state of being separated by the walls between the recesses of the particle manufacturing substrate. Therefore, according to this terminal connection method, the terminals are not short-circuited via the conductive particles, and the terminals can be arranged at a narrow pitch for high-density mounting.

According to a third aspect of the present invention, there is provided a method for producing conductive particles, which comprises forming a film of a conductive material on the surface of a substrate for producing conductive particles having fine recesses formed on the surface, and then heating and melting the film. The method is characterized in that after the melt is made spherical by surface tension and then cooled, conductive particles are generated in each recess of the substrate for manufacturing conductive particles. In the method for producing conductive particles according to the third aspect, the conductive material is deposited in the recess of the particle production substrate in an amount corresponding to the opening area of the recess. Then, when the conductive material is melted, the melted material gathers in the recesses and is naturally spherical due to the surface tension to become conductive particles. Since the size of the conductive particles is determined by the amount of the conductive material, if the opening area of the recess and the thickness of the conductive material are the same, the conductive particles having the same diameter are manufactured.
Therefore, according to this method for producing conductive particles, it is possible to produce conductive particles having a desired particle size without variation.

Furthermore, since the substrate for producing conductive particles according to claim 4 has fine recesses formed on the surface, the method according to claims 2 and 3 can be carried out by using this substrate. The terminal connection structure can be formed.

Since the substrate for producing conductive particles according to claim 5 is provided with a plurality of types of recesses having different opening areas, when a conductive material is deposited on the substrate for producing particles, the conductive material laminated in each recess is formed. There is a difference in the amount of the conductive material. As a result, there is a difference in the size of the conductive particles formed in the recesses, which in turn causes a difference in the protrusion height from the surface of the particle manufacturing substrate to the top of each conductive particle. For this reason, when conductive particles are manufactured using this substrate for manufacturing conductive particles, and the first electronic component is superposed on the conductive particles and the conductive particles are adhered thereto, the highly protruding conductive particles become the first electronic component. Move on to. Therefore, by using this substrate for producing conductive particles, it is possible to obtain a terminal connection structure in which conductive particles are arranged in a predetermined pattern.

The substrate for producing conductive particles according to claim 6 is provided with a plurality of types of recesses having different depths. Therefore, when a conductive material is deposited on the substrate for producing particles, the conductive material formed in the deep recesses is formed. The characteristic particles will be recessed by that amount and will be located in the concave portion. As a result, there is a difference in the protrusion height from the surface of the particle manufacturing substrate to the top of the conductive particles formed in each recess. Therefore, even if this substrate for producing conductive particles is used, it is possible to obtain a terminal connection structure in which conductive particles are arranged in a predetermined pattern.

[Brief description of drawings]

1A to 1C show respective steps of a terminal connecting method of Embodiment 1, (a) to (c) are sectional views, (d) is a plan view,
(E) is a sectional view.

2A and 2B show a concave portion of the particle production substrate used in Example 1, where FIG. 2A is a plan view and FIG. 2B is a sectional view.

FIG. 3 is a plan view showing the arrangement of recesses in the particle manufacturing substrate used in Example 1.

FIG. 4 is a cross-sectional view for explaining conditions for calculating the amount of a conductive material deposited on the surface of the recess of the particle production substrate of Example 1.

FIG. 5 is a graph showing the protrusion height of conductive particles when conductive particles are manufactured using the particle manufacturing substrates of Examples 1 to 3 manufactured by using (100) -plane silicon crystals. The graph of the film thickness of a material film and protrusion height which shows a result.

6A and 6B are diagrams showing respective steps of the terminal connecting method of Embodiment 2, wherein FIGS. 6A to 6C are sectional views and FIG.

FIG. 7 is a plan view showing the arrangement of recesses in the particle production substrate used in Example 2.

FIG. 8 is a plan view showing the arrangement of recesses in the particle manufacturing substrate used in Example 3.

9A and 9B are views showing one of the recesses of the particle-producing substrate used in Example 3, in which FIG. 9A is a plan view and FIG. 9B is a view in FIG.
A sectional view taken along line A, and (c) is a sectional view taken along line BB in FIG.

10 is a plan view of the concave portion of the substrate for producing particles used in Example 4, (a) is a plan view, and (b) is CC in FIG.
FIG. 6C is a sectional view taken along line D-D in FIG.

FIG. 11 is a perspective view showing a recessed portion of the substrate for producing particles of Example 4.

FIG. 12 shows a result of calculating the protrusion height of the conductive particles when the conductive particles are manufactured using the particle manufacturing substrate of Example 4 manufactured using the (110) plane silicon crystal, Graph of the thickness of the material film and the protrusion height.

FIG. 13 is a cross-sectional view showing each step of the method for producing conductive particles of Example 5.

FIG. 14 is a sectional view showing a substrate for producing particles of Example 6.

FIG. 15 is a sectional view showing a conventional terminal connection structure.

FIG. 16 is a cross-sectional view for explaining problems of the conventional terminal connection structure.

[Explanation of symbols]

 1 Substrate 2 Substrate 4 Terminal 5 Terminal 6 Conductive Particle 7 Adhesive Layer 10 Recessed Part 11 Conductive Particle 12 Material Film 20 Particle Manufacturing Substrate 21 First Electronic Component 23 Adhesive 25 Second Electronic Component 26 Substrate 27 Conductor Layer 28 Insulating film 29 Bottom surface 30 Side surface 101 Recessed portion 102 Recessed portion 104 Recessed portion 111 Conductive particle 112 Conductive particle

Claims (6)

[Claims] 1. In a terminal connection structure in which a terminal of a first electronic component and a terminal of a second electronic component are electrically connected via conductive particles, the conductive particles are all separated from each other. Terminal connection structure characterized by being arranged in. 2. A film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface thereof, and the film is heated and melted so that the melt becomes spherical due to surface tension. By cooling, the conductive particles are produced in the respective concave portions of the conductive particle producing substrate, and then the first electronic component is superposed on the surface of the conductive particle producing substrate to form the first conductive particles. The electronic component is transferred to at least a portion provided with a terminal, and then the second electronic component is superposed on the first electronic component to electrically connect the terminals to each other through the conductive particles. How to connect terminals. 3. A film of a conductive material is formed on the surface of a substrate for producing conductive particles having fine recesses formed on the surface thereof, and then the film is heated and melted to make the melt spherical due to surface tension. A method for producing conductive particles, characterized in that conductive particles are produced in each recess of the substrate for producing conductive particles by cooling. 4. A substrate for producing conductive particles, which has fine recesses formed on its surface. 5. The substrate for producing conductive particles according to claim 4, wherein a plurality of types of recesses having different opening areas are provided as the recesses. 6. The substrate for producing conductive particles according to claim 4, wherein a plurality of types of recesses having different depths are provided as the recesses.