JPH0582728B2 - - Google Patents
Info
- Publication number
- JPH0582728B2 JPH0582728B2 JP59227504A JP22750484A JPH0582728B2 JP H0582728 B2 JPH0582728 B2 JP H0582728B2 JP 59227504 A JP59227504 A JP 59227504A JP 22750484 A JP22750484 A JP 22750484A JP H0582728 B2 JPH0582728 B2 JP H0582728B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- flatness
- vacuum
- holes
- vacuum chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 16
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、大面積の基板に、転写・描写装置を
用いて微細なパターン形成をする場合において、
基板の平坦化を可能にした真空チヤツキング方法
に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for forming fine patterns on a large-area substrate using a transfer/drawing device.
This invention relates to a vacuum chuck method that makes it possible to flatten a substrate.
従来よりシリコン基板あるいは、薄膜素子用ガ
ラス基板等に、転写・描写装置を用いて光リソグ
ラフイ技術により基板表面に微細パターンを形成
する場合、基板のそりをいかに抑えるかが課題で
あつた。プロセス上で、基板にそりを作らないよ
うな工夫も必要であるが、少々のそりであれば、
真空、エレクトロスタテツク、メカニカルの三方
式でフラツトチヤツキングすることで、十分であ
つた。（超LSI技術総集編、1982年版、ダイヤモ
ンド社）特に、真空チヤツキング方式は、高い平
坦度を有した基板保持台に複数個の穴を設けて真
空引きすることで容易に基板を平坦化することが
可能なため、半導体装置製造用ラインにある露光
装置に、広く採用されている。第２図は、従来の
真空チヤツキング方式の模式図である。１は基
板、２′は真空チヤツキング式基板保持台、３は
真空チヤツク用の穴、４は真空チヤツク保持用架
台である。基板１は、穴３を通して真空ポンプ５
により高いフラツトネスを有した基板保持台２に
チヤツキングされて平坦性を保持することができ
る。
BACKGROUND ART Conventionally, when forming fine patterns on the surface of a silicon substrate, a glass substrate for a thin film element, etc. by optical lithography using a transfer/writing device, the problem has been how to suppress warpage of the substrate. It is necessary to take measures to prevent warping on the board during the process, but if there is a slight warp,
It was sufficient to perform flat chucking using three methods: vacuum, electrostatic, and mechanical. (Ultra LSI Technology Collection, 1982 edition, Diamond Inc.) In particular, the vacuum chucking method makes it easy to flatten the substrate by creating multiple holes in a highly flat substrate holder and applying vacuum. Because of this, it is widely used in exposure equipment on semiconductor device manufacturing lines. FIG. 2 is a schematic diagram of a conventional vacuum chuck system. 1 is a substrate, 2' is a vacuum chuck type substrate holding stand, 3 is a hole for a vacuum chuck, and 4 is a stand for holding a vacuum chuck. The substrate 1 is connected to the vacuum pump 5 through the hole 3.
The flatness can be maintained by being chucked on the substrate holding table 2 having higher flatness.
前述の従来技術では、デバイス面側に凹であれ
ば、あまり問題とならないが、デバイス面側に凸
である場合、デバイス面側が波うつている場合、
大面積の基板の場合には、平坦化が困難である。
第３図は、種々なそりをもつた基板を従来の真空
チヤツキング方式により基板を真空チヤツクした
場合を図示したものである。左側が真空チヤツク
前、右側が真空チヤツク後であり、共に上側がデ
バイス面である。ａは、デバイス面側に凹の場合
で平坦化は容易であるが、ｂ，ｃのようにデバイ
ス面側に凸あるいは波うつている場合、中央分や
その周辺に平坦化できない部分を生ずる。特に、
数ミクロンメートルの微細パターンを形成する場
合には、露光装置の波長が200〜500ナノメートル
として、レンズ系を用いた露光装置では、10ミク
ロンメートルの焦点深度以内に、そりを抑える必
要がある。（応用物理、vol 49，No.１，1980，p83
〜89）大面積になればなるほど、前記の数値以内
に抑えることは困難になるという問題点を有す
る。
In the above-mentioned conventional technology, if it is concave on the device side, there is not much of a problem, but if it is convex on the device side or the device side is wavy,
In the case of large-area substrates, planarization is difficult.
FIG. 3 illustrates the case where substrates with various warpages are vacuum chucked by the conventional vacuum chuck method. The left side is before the vacuum chuck, the right side is after the vacuum chuck, and the upper side is the device surface. If a is concave toward the device surface, it is easy to flatten it, but if it is convex or undulating toward the device surface, as in b and c, there will be a portion in the center or its periphery that cannot be flattened. especially,
When forming a fine pattern of several micrometers, the wavelength of the exposure device is 200 to 500 nanometers, and with an exposure device using a lens system, it is necessary to suppress warpage to within a depth of focus of 10 micrometers. (Applied Physics, vol 49, No. 1, 1980, p83
~89) There is a problem in that the larger the area, the more difficult it becomes to keep it within the above numerical value.
そこで本発明は、このような問題点を解決する
もので、その目的とするところは、大面積の基板
に、高い平坦性を実現する真空チヤツキング方式
を提供するところにある。 The present invention is intended to solve these problems, and its purpose is to provide a vacuum chuck method that achieves high flatness on large-area substrates.
本発明の露光装置及び露光方法は、基板上に任
意のパターンを転写・描写することによつて該基
板上にパターンを形成する装置と、該基板を保持
する基板保持台と、該基板保持台上の該基板を真
空引きするための複数の穴を設けてなり、該穴か
ら真空引きして該基板を保持する真空チヤツキン
グ装置を有する露光装置において、該基板保持台
は上下移動可能な複数の独立した匡体を配置して
なり、該穴から真空引きする吸引力はそれぞれ独
立に設定されてなることを特徴とする。また、上
下移動可能な複数の独立した匡体からなる基板保
持台と該基板保持台上の該基板を真空引きするた
めの複数の穴を設けてなり、該穴から真空引きし
て該基板を保持する真空チヤツキング装置と、該
基板の平坦度を測定するフラツトネス測定器と、
該基板の平坦度に合わせて該基板保持台を制御す
るフラツトネス制御装置とを有し、該基板上に任
意のパターンを転写・描写することによつて該基
板上にパターンを形成する露光方法において、該
基板保持台上に該基板を固定した後、該基板の平
坦度を該フラツトネス測定器により測定し、該フ
ラツトネス制御装置によつて該基板保持台の高さ
を個々に調整し、該基板保持台と穴からの吸引力
を調整して該基板を平坦にした後、該基板上にパ
ターンを形成することを特徴とする。
An exposure apparatus and an exposure method of the present invention include an apparatus that forms a pattern on a substrate by transferring and drawing an arbitrary pattern onto the substrate, a substrate holding stand that holds the substrate, and the substrate holding stand. In an exposure apparatus having a vacuum chucking device that draws vacuum from the holes and holds the substrate, the substrate holding table has a plurality of holes that are movable up and down. It is characterized in that independent housings are arranged, and the suction force for drawing a vacuum from the holes is set independently. Further, a substrate holding stand consisting of a plurality of independent casings that can be moved up and down and a plurality of holes for evacuating the substrate on the substrate holding stand are provided, and a vacuum is drawn from the holes to remove the substrate. a vacuum chucking device for holding the substrate; a flatness measuring device for measuring the flatness of the substrate;
A flatness control device that controls the substrate holder according to the flatness of the substrate, and an exposure method that forms a pattern on the substrate by transferring and drawing an arbitrary pattern onto the substrate. After fixing the substrate on the substrate holder, the flatness of the substrate is measured by the flatness measuring device, the height of the substrate holder is individually adjusted by the flatness control device, and the flatness of the substrate is measured by the flatness measuring device. The method is characterized in that a pattern is formed on the substrate after the substrate is flattened by adjusting the suction force from the holding table and the hole.
本発明の上記の方法によれば、適切な平坦度が
確保されるまで、複数個の独立な真空チヤツクの
高さと圧力を独立に制御する。従来の真空チヤツ
ク方式で平坦にできなかつた部分において、真空
チヤツクの吸引力の増加あるいは真空チヤツクの
高さの降下あるいは両者の併用により基板の平坦
性を確保するものである。
According to the above method of the present invention, the height and pressure of a plurality of independent vacuum chucks are independently controlled until proper flatness is achieved. In areas that could not be flattened using the conventional vacuum chuck method, the flatness of the substrate can be ensured by increasing the suction force of the vacuum chuck, lowering the height of the vacuum chuck, or using a combination of both.
第１図は、本発明の真空チヤツキング方式の模
式図である。１は基板、２は独立に上下移動可能
な真空チヤツク式基板保持台、３は真空チヤツク
用の穴、４は真空チヤツク保持用架台である。基
板１は、穴３を通して真空ポンプ５により独立な
真空チヤツク式基板保持台２に固定された後フラ
ツトネス測定器６によりフラツトネス測定器６か
らフラツトネス制御装置７にデータが送られる。
真空チヤツク式基板保持台２の高さを制御する場
合は上下駆動装置８により上下移動を行なう。真
空チヤツクの吸引力を制御する場合は、独立に圧
力弁９の調整を行なつて圧力制御をする。この動
作は、適切な平坦度が得られるまで行なわれる。
例えば、第３図ｂにおいて平坦化を実現するため
には、第４図ａ，ｂ右側の図に示すがごとく、中
心部の真空チヤツク式基板保持台２の高さを周辺
部より下げる。あるいは、中心部の真空チヤツク
式基板保持台２の高さを下げるかわりに、中心部
の真空チヤツクの圧力を下げて吸引力を上げるこ
とによつて平坦化を実現できる。
FIG. 1 is a schematic diagram of the vacuum chuck system of the present invention. Reference numeral 1 designates a substrate, 2 a vacuum chuck type substrate holder that can be moved up and down independently, 3 a hole for a vacuum chuck, and 4 a pedestal for holding a vacuum chuck. After the substrate 1 is fixed to an independent vacuum chuck type substrate holding stand 2 through a hole 3 by a vacuum pump 5, data is sent from the flatness measuring device 6 to a flatness control device 7.
When controlling the height of the vacuum chuck type substrate holder 2, a vertical drive device 8 is used to move it up and down. When controlling the suction force of the vacuum chuck, the pressure is controlled by independently adjusting the pressure valve 9. This operation is performed until adequate flatness is achieved.
For example, in order to achieve flattening in FIG. 3b, the height of the vacuum chuck type substrate holder 2 in the central area is lowered from the peripheral area, as shown in the right-hand diagrams in FIGS. 4a and 4b. Alternatively, instead of lowering the height of the vacuum chuck type substrate holder 2 at the center, flattening can be achieved by lowering the pressure of the vacuum chuck at the center and increasing the suction force.
以上のような構成にすることによつて、以下の
ような効果が得られる。
With the above configuration, the following effects can be obtained.
すなわち、
(a) 独立に上下移動可能な複数個の真空チヤツク
を用いて真空チヤツキングした後、平坦度を測
定して独立な真空チヤツクの高さあるいは圧力
の調整をすることにより、従来よりも高い平坦
化を実現することができる。 In other words, (a) vacuum chucking is performed using multiple vacuum chucks that can be moved up and down independently, and then the flatness is measured and the height or pressure of the vacuum chucks is adjusted independently to achieve higher Flattening can be achieved.
(b) 基板に大きな厚みムラがある場合、真空チヤ
ツクの高さをそれぞれ独立して調整することに
よつてレンズ系に対して適切な平坦性を出すこ
とが可能となる。特に、基板が大面積になつた
ときには著しい平坦化の効果あり、微細パター
ン形成が可能となる。(b) If the substrate has large thickness irregularities, it is possible to achieve appropriate flatness for the lens system by adjusting the height of each vacuum chuck independently. Particularly when the substrate has a large area, it has a remarkable flattening effect and enables the formation of fine patterns.
第１図は、本発明の真空チヤツキング方式の模
式図である。第２図は、従来の真空チヤツキング
方式の模式図である。第３図ａ〜ｃは、種々のそ
りをもつた基板を従来の真空チヤツキング方式に
より真空チヤツクした場合を図示したものであ
り、第４図ａ，ｂは、本発明の真空チヤツキング
方式により真空チヤツクした場合を図示したもの
である。
１……基板、２……独立上下移動可能な真空チ
ヤツク式基板保持台、２′……真空チヤツク式基
板保持台、３……真空チヤツク用の穴、４……真
空チヤツク保持用架台、５……真空ポンプ、６…
…フラツトネス測定器、７……フラツトネス制御
装置、８……上下駆動装置、９……圧力弁。
FIG. 1 is a schematic diagram of the vacuum chuck system of the present invention. FIG. 2 is a schematic diagram of a conventional vacuum chuck system. Figures 3a to 3c illustrate the cases in which substrates with various warpages are vacuum chucked using the conventional vacuum chucking method, and Figures 4a and 4b show the cases in which substrates with various warps are vacuum chucked using the vacuum chucking method of the present invention. This diagram illustrates the case where DESCRIPTION OF SYMBOLS 1...Substrate, 2...Vacuum chuck type substrate holding stand that can be moved up and down independently, 2'...Vacuum chuck type substrate holding stand, 3...Hole for vacuum chuck, 4...Base for holding vacuum chuck, 5 ...Vacuum pump, 6...
... Flatness measuring device, 7 ... Flatness control device, 8 ... Vertical drive device, 9 ... Pressure valve.
Claims (1)
とによつて該基板上にパターンを形成する装置
と、該基板を保持する基板保持台と、該基板保持
台上の該基板を真空引きするための複数の穴を設
けてなり、該穴から真空引きして該基板を保持す
る真空チヤツキング装置を有する露光装置におい
て、 該基板保持台は上下移動可能な複数の独立した
匡体を配置してなり、該穴から真空引きする吸引
力はそれぞれ独立に設定されてなることを特徴と
する露光装置。 ２ 上下移動可能な複数の独立した匡体からなる
基板保持台と該基板保持台上の該基板を真空引き
するための複数の穴を設けてなり、該穴から真空
引きして該基板を保持する真空チヤツキング装置
と、該基板の平坦度を測定するフラツトネス測定
器と、該基板の平坦度に合わせて該基板保持台を
制御するフラツトネス制御装置とを有し、該基板
上に任意のパターンを転写・描写することによつ
て該基板上にパターンを形成する露光方法におい
て、 該基板保持台上に該基板を固定した後、該基板
の平坦度を該フラツトネス測定器により測定し、
該フラツトネス制御装置によつて該基板保持台の
高さを個々に調整し、該基板保持台と穴からの吸
引力を調整して該基板を平坦にした後、該基板上
にパターンを形成することを特徴とする露光方
法。[Scope of Claims] 1. A device for forming a pattern on a substrate by transferring or drawing an arbitrary pattern onto the substrate, a substrate holder for holding the substrate, and a device for forming a pattern on the substrate by transferring or drawing an arbitrary pattern on the substrate; In an exposure apparatus having a vacuum chuck device which is provided with a plurality of holes for evacuating the substrate and holds the substrate by drawing a vacuum from the holes, the substrate holding table has a plurality of independent boxes that are movable up and down. 1. An exposure apparatus characterized in that the suction force for drawing a vacuum from the holes is independently set. 2. A substrate holding stand consisting of a plurality of independent boxes that can be moved up and down, and a plurality of holes for evacuating the substrate on the substrate holding stand, and holding the substrate by drawing vacuum from the holes. A flatness measuring device measures the flatness of the substrate, and a flatness control device controls the substrate holder according to the flatness of the substrate. In an exposure method for forming a pattern on the substrate by transferring and drawing, after fixing the substrate on the substrate holder, measuring the flatness of the substrate with the flatness measuring device,
After adjusting the height of the substrate holder individually by the flatness control device and adjusting the suction force from the substrate holder and the hole to flatten the substrate, a pattern is formed on the substrate. An exposure method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59227504A JPS61105841A (en) | 1984-10-29 | 1984-10-29 | Vacuum chucking method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59227504A JPS61105841A (en) | 1984-10-29 | 1984-10-29 | Vacuum chucking method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61105841A JPS61105841A (en) | 1986-05-23 |
| JPH0582728B2 true JPH0582728B2 (en) | 1993-11-22 |
Family
ID=16861927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59227504A Granted JPS61105841A (en) | 1984-10-29 | 1984-10-29 | Vacuum chucking method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61105841A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2691743B2 (en) * | 1988-09-07 | 1997-12-17 | 東京エレクトロン株式会社 | LCD substrate gas treatment device |
| JP2005175016A (en) * | 2003-12-08 | 2005-06-30 | Canon Inc | Substrate holding device, exposure device using the same, and method of manufacturing device |
| US10656536B2 (en) | 2014-05-06 | 2020-05-19 | Asml Netherlands B.V. | Substrate support, method for loading a substrate on a substrate support location, lithographic apparatus and device manufacturing method |
| CN110774077B (en) * | 2019-10-21 | 2021-08-10 | 无锡芯坤电子科技有限公司 | Wafer processing thinning machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204547A (en) * | 1981-06-12 | 1982-12-15 | Hitachi Ltd | Exposing method |
| JPS5867026A (en) * | 1981-10-19 | 1983-04-21 | Hitachi Ltd | Thin plate metamorphosis device |
| JPS5917247A (en) * | 1982-07-21 | 1984-01-28 | Hitachi Ltd | Exposure method and its device |
-
1984
- 1984-10-29 JP JP59227504A patent/JPS61105841A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204547A (en) * | 1981-06-12 | 1982-12-15 | Hitachi Ltd | Exposing method |
| JPS5867026A (en) * | 1981-10-19 | 1983-04-21 | Hitachi Ltd | Thin plate metamorphosis device |
| JPS5917247A (en) * | 1982-07-21 | 1984-01-28 | Hitachi Ltd | Exposure method and its device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61105841A (en) | 1986-05-23 |
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