JPH0582433A - Semiconductor device manufacturing device - Google Patents

Abstract

PURPOSE:To reduce the variation of a film thickness caused by changes in viscosity of a liquid chemical on a wafer by providing a liquid chemical discharge nozzle provided above the rotational center of the wafer and another liquid chemical discharge nozzle provided above the wafer at a position deviated from the rotational center. CONSTITUTION:A first liquid chemical discharge nozzle 3 is provided above the rotational center of a wafer 2 rotated by means of a spin chuck 1 and a second liquid chemical discharge nozzle 4 is provided above the wafer 2 at a position deviated from the rotational center in its radial direction. The nozzles 3 and 4 are connected to a liquid chemical pump. Then a spin coat film is formed on the wafer 2 by dropping a liquid chemical onto the wafer from the nozzles 3 and 4 while the wafer 2 is rotated at a low rotating speed of about 500rpm and shaking off the liquid chemical by rotating the wafer 2 at an arbitrary rotating speed. Therefore, the variation of the film thickness of the spin coat film on the surface of the wafer 2 can be suppressed to about several tens of Angstrom .

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a semiconductor device manufacturing apparatus for spin coating a semiconductor wafer with a chemical solution.

[0002]

2. Description of the Related Art As shown in FIG. 3, a conventional semiconductor device manufacturing apparatus for spin-coating a semiconductor wafer with a chemical liquid is positioned on the rotation center of the spin chuck 1 on the semiconductor wafer 2 attracted to the spin chuck 1. After dropping an appropriate amount of the chemical solution from the first nozzle 3 for discharging the chemical solution, the semiconductor wafer 2 is rotated at an arbitrary number of revolutions and the chemical solution is shaken off to spin on the semiconductor wafer 2 with a desired film thickness. A coat film was formed.

[0003]

In the above-mentioned spin coating, since the chemical solution is supplied only to the center of rotation of the semiconductor wafer, the chemical solution that volatilizes quickly and viscosity changes easily is supplied to the periphery of the wafer. Since the viscosity of the chemical solution is increased, the film thickness is increased to about 100 to 200 angstrom, and there is a problem that the in-plane uniformity of the film thickness is deteriorated.

It is an object of the present invention to provide an apparatus for manufacturing a semiconductor device, in which fluctuations in film thickness caused by changes in the viscosity of a chemical solution on a wafer are reduced.

[0005]

To achieve the above object, in a semiconductor device manufacturing apparatus according to the present invention, there is provided a semiconductor device manufacturing apparatus for spin-coating a chemical solution onto a semiconductor wafer, the center of rotation of the wafer being used. It has a chemical solution discharge nozzle located above and a chemical solution discharge nozzle located on the wafer deviated from the rotation center of the wafer.

[0006]

The chemical liquid nozzles are provided at the center of rotation of the semiconductor wafer and at positions deviated from the center of rotation, respectively, to reduce fluctuations in film thickness due to changes in the viscosity of the chemical liquid on the wafer.

[0007]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1A is a configuration diagram showing Embodiment 1 of the present invention, and FIG. 1B is a chemical solution coating sequence diagram.

In FIG. 1A, the first chemical solution nozzle 3 is placed on the center of rotation of the wafer 2 rotated by the spin chuck 1.
And the second chemical liquid nozzle 4 is arranged at a position radially displaced from the rotation center of the wafer 2. The first chemical liquid nozzle 3 and the second chemical liquid nozzle 4 are connected to the chemical liquid pump.

In the embodiment, the wafer 2 is rotated at 500 rpm.
While rotating at a low rotation speed, the chemical solution is dripped onto the wafer 2 from the first chemical solution nozzle 3 and the second chemical solution nozzle 4,
The chemical solution on the wafer 2 is shaken off at an arbitrary rotation speed to form a spin coat film on the wafer 2. As a result, the film thickness variation within the wafer surface can be set to about several tens of angstroms.

(Embodiment 2) FIG. 2 (a) is a configuration diagram showing Embodiment 2 of the present invention, FIG. 2 (b) is a chemical liquid piping system diagram,
(C) is a coating sequence diagram.

In FIG. 2A, in this embodiment,
The positions of the first chemical liquid nozzle 3 and the second chemical liquid nozzle 4 are
As shown in FIG. 2A, it is almost the same as the first embodiment,
The second chemical liquid nozzle 4 is movably installed so that the distance from the rotation center of the wafer 2 changes. Further, as shown in FIG. 2B, the chemical liquid piping systems I and II are independent of the first chemical liquid nozzle 3 and the second chemical liquid nozzle 4, and each has a pump 7, a filter 6, and a suck back valve 5. ..

The coating sequence is almost the same as that of the first embodiment as shown in FIG. 2C, but since the chemical liquid piping systems I and II are independent, the discharge timings from the nozzles 3 and 4 are independent. You can control.

In this embodiment, the position adjustment of the second chemical liquid nozzle 4, the adjustment of the discharge timing from the first chemical liquid nozzle 3 and the second chemical liquid nozzle 4, the first chemical liquid nozzle 3 and the second chemical liquid nozzle Since it is possible to change the viscosity of the chemical liquid discharged from No. 4, the uniformity of the coating film thickness on the wafer surface is further improved.

[0015]

As described above, according to the present invention, by providing the chemical liquid nozzle at a position deviated from the center of rotation of the wafer, it is possible to reduce the film thickness variation due to the viscosity change of the chemical liquid on the wafer. Have.

[Brief description of drawings]

1A is a nozzle positional relationship diagram showing a first embodiment of the present invention, and FIG. 1B is a coating sequence diagram.

2A is a nozzle positional relationship diagram showing Embodiment 2 of the present invention, FIG. 2B is a chemical liquid piping system diagram, and FIG. 2C is a coating sequence diagram.

FIG. 3 is a nozzle positional relationship diagram showing a conventional spin coater.

[Explanation of symbols]

 1 Spin Chuck 2 Wafer 3 First Chemical Solution Nozzle 4 Second Chemical Solution Nozzle 5 Suck Back Valve 6 Filter 7 Pump

Claims (1)

[Claims] 1. A semiconductor device manufacturing apparatus for spin-coating a chemical solution on a semiconductor wafer, the chemical solution discharge nozzle being located on a rotation center of the wafer, and the chemical solution discharge being located on a wafer deviated from the rotation center of the wafer. An apparatus for manufacturing a semiconductor device, comprising: a nozzle.