JPH0581167B2 - - Google Patents
Info
- Publication number
- JPH0581167B2 JPH0581167B2 JP24347788A JP24347788A JPH0581167B2 JP H0581167 B2 JPH0581167 B2 JP H0581167B2 JP 24347788 A JP24347788 A JP 24347788A JP 24347788 A JP24347788 A JP 24347788A JP H0581167 B2 JPH0581167 B2 JP H0581167B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- melting point
- substrate
- bonding
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 42
- 238000002844 melting Methods 0.000 claims abstract description 37
- 230000008018 melting Effects 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 39
- 239000000758 substrate Substances 0.000 abstract description 26
- 238000005304 joining Methods 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 abstract description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 239000011733 molybdenum Substances 0.000 abstract description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347788A JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347788A JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0290508A JPH0290508A (ja) | 1990-03-30 |
| JPH0581167B2 true JPH0581167B2 (enrdf_load_html_response) | 1993-11-11 |
Family
ID=17104471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24347788A Granted JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0290508A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2653008B2 (ja) * | 1993-01-25 | 1997-09-10 | 日本電気株式会社 | 冷陰極素子およびその製造方法 |
| US10139300B2 (en) | 2013-12-25 | 2018-11-27 | Hitachi Automotive Systems, Ltd. | High pressure strain detection device with a base made of a first brittle material and a strain detection element bonded to the base via a second brittle material |
-
1988
- 1988-09-27 JP JP24347788A patent/JPH0290508A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0290508A (ja) | 1990-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3417459A (en) | Bonding electrically conductive metals to insulators | |
| KR101535316B1 (ko) | 큰 디바이스의 프릿 밀봉 | |
| US6887342B2 (en) | Field-assisted fusion bonding | |
| TW200836325A (en) | Functional element | |
| Despont et al. | Fabrication of a silicon-Pyrex-silicon stack by ac anodic bonding | |
| EP0265090B1 (en) | Method for making multisensor piezoelectric elements | |
| Wallis | Field assisted glass sealing | |
| US4452624A (en) | Method for bonding insulator to insulator | |
| US5769997A (en) | Method for bonding an insulator and conductor | |
| Morsy et al. | Mechanism of enlargement of intimately contacted area in anodic bonding of Kovar alloy to borosilicate glass | |
| JPH0581167B2 (enrdf_load_html_response) | ||
| US7153759B2 (en) | Method of fabricating microelectromechanical system structures | |
| RU2705518C1 (ru) | Способ сращивания диэлектрических пластин под действием сильного электрического поля | |
| JP2002145676A (ja) | 陽極接合方法 | |
| CN1307683C (zh) | 一种传感器小间隙非粘连静电封接方法 | |
| US9287126B2 (en) | Multi-wafer pair anodic bonding apparatus and method | |
| Singh et al. | A new method for fast anodic bonding in microsystem technology | |
| JP2010143792A (ja) | 基板の接合方法およびｍｅｍｓデバイス | |
| JPS6338265A (ja) | 陽極接合方法 | |
| JPH08199118A (ja) | シリコン―シリコン接合方法 | |
| WO2007129983A1 (en) | Anodic bonding of polymers to glass, silicon or other materials | |
| JPH0745801A (ja) | 基板の接合方法 | |
| JPS6129541B2 (enrdf_load_html_response) | ||
| JP2001158645A (ja) | 陽極接合方法 | |
| JPS6256604B2 (enrdf_load_html_response) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081111 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term |