JPH0577087A - Extremely fine solder wire and production thereof - Google Patents
Extremely fine solder wire and production thereofInfo
- Publication number
- JPH0577087A JPH0577087A JP3159127A JP15912791A JPH0577087A JP H0577087 A JPH0577087 A JP H0577087A JP 3159127 A JP3159127 A JP 3159127A JP 15912791 A JP15912791 A JP 15912791A JP H0577087 A JPH0577087 A JP H0577087A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- wire
- less
- fine wire
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45109—Indium (In) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45111—Tin (Sn) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45116—Lead (Pb) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01008—Oxygen [O]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Metal Extraction Processes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＨＩＣ（ハイブリッド
ＩＣ）、ＴＡＢ（テープ・オートメイテッド・ボンディ
ング）、フリップチップ等におけるバンプ形成や、超電
導用ＩＣ、センサ等における配線材として好適に用いら
れる半田極細線およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a solder suitable for forming bumps in HIC (hybrid IC), TAB (tape automated bonding), flip chips, etc., and as wiring materials in superconducting ICs, sensors, etc. The present invention relates to an ultrafine wire and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来より、半導体装置等の接続用半田材
料として、Ｐｂ，Ｉｎ，Ｓｎや、これらのいずれかを主
成分とした材料が用いられている。2. Description of the Related Art Conventionally, Pb, In, Sn, or a material containing any of these as a main component has been used as a soldering material for connecting semiconductor devices and the like.
【０００３】このような半田材料は、一般に室温で伸線
加工が施されて直径が０．１ｍｍ程度のワイヤにされ、
そのまま配線材として使用されたり、このワイヤの先端
部に線径の２〜３倍の径を有するボールを形成して、バ
ンプ形成用ボールとされる。Such a solder material is generally drawn at room temperature to form a wire having a diameter of about 0.1 mm,
The ball is used as it is as a wiring material, or a ball having a diameter of 2 to 3 times the wire diameter is formed at the tip of the wire to form a ball for bump formation.
【０００４】[0004]
【発明が解決しようとする課題】さらに、近年、電子機
器の小型化に伴い、用いられる半田線の細線化が要望さ
れており、線径が３０μｍ〜１００μｍ程度のものが望
まれている。しかしながら、前述したようなＰｂ，Ｉ
ｎ，Ｓｎや、これらのいずれかを主成分とした材料では
材料自体の強度が不足しているために、伸線加工により
線径が０．１ｍｍ以下の半田線を製造しようとすると、
テンション切れが多発してしまうという問題点があっ
た。このため、このような材料を急冷凝固して細線化し
ようとする試みも行われている。しかしこの急冷凝固法
により製造された半田線では、線径の変動が大きいもの
となってしまい、また長尺化するために大掛かりな装置
が必要になってしまう。Furthermore, in recent years, with the miniaturization of electronic equipment, there has been a demand for thinner solder wires to be used, and wire diameters of about 30 μm to 100 μm are desired. However, as described above, Pb, I
Since the strength of the material itself is insufficient with n, Sn, or a material containing any of these as a main component, if a solder wire having a wire diameter of 0.1 mm or less is manufactured by wire drawing,
There was a problem that tension was often cut. Therefore, attempts have been made to rapidly cool and solidify such materials to form fine wires. However, the solder wire manufactured by this rapid solidification method has a large variation in wire diameter, and a large-scale device is required for lengthening the wire.
【０００５】また、一方、Ｐｂ等の半田材料には、不可
避不純物としてＵ，Ｔｈ等の放射性同位元素が含まれて
いるため、この半田材料を半導体チップ周辺の接続材料
として使用した際に、上記Ｕ，Ｔｈ等のα放射によりメ
モリー素子等のソフトエラーを引き起こす場合があっ
た。On the other hand, since the solder material such as Pb contains radioactive isotopes such as U and Th as unavoidable impurities, when this solder material is used as a connecting material around the semiconductor chip, In some cases, α radiation such as U and Th causes a soft error in a memory device or the like.
【０００６】本発明は前記事情に鑑みてなされたもの
で、線径が０．１ｍｍ以下であり線径のばらつきが小さ
くかつソフトエラーを生じる確率が小さい半田極細線お
よびその製造方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides a solder extra fine wire having a wire diameter of 0.1 mm or less, a small variation in the wire diameter, and a low probability of causing a soft error, and a manufacturing method thereof. With the goal.
【０００７】[0007]
【課題を解決するための手段】請求項１記載の半田極細
線では、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし、表
面酸化皮膜の酸素を含む酸素濃度を１００ppm以下、線
径を１０〜１００μｍにすることを課題解決の手段とし
た。According to a first aspect of the present invention, in a solder fine wire according to claim 1, any one of Pb, In, and Sn is a main component, and the surface oxide film has an oxygen concentration including oxygen of 100 ppm or less and a wire diameter of 10 to 10. Setting the thickness to 100 μm was used as a means for solving the problem.
【０００８】請求項２記載の半田極細線では、Ｐｂ，Ｉ
ｎ，Ｓｎのいずれかを主成分とし、表面酸化皮膜の酸素
を含む酸素濃度を１００ppm以下、放射性α粒子のカウ
ント数を０．５CPH/cm2以下、線径を１０〜１００μｍ
にすることを課題解決の手段とした。In the solder fine wire according to claim 2, Pb, I
n or Sn as the main component, the oxygen concentration of the surface oxide film containing oxygen is 100 ppm or less, the count number of radioactive α particles is 0.5 CPH / cm 2 or less, and the wire diameter is 10 to 100 μm.
Was adopted as the means for solving the problem.
【０００９】請求項３記載の半田極細線では、請求項１
または２記載の半田極細線の表面に、１０Å〜１００Å
径の界面活性剤をコーティングすることを課題解決の手
段とした。In the solder extra fine wire according to claim 3,
Or 10 Å ~ 100 Å on the surface of the solder fine wire described in 2.
Coating with a surfactant having a diameter was used as a means for solving the problem.
【００１０】請求項４記載の半田極細線の製造方法で
は、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし酸素濃度
が２０ppm以下の半田材料に、１０℃以下の温度条件で
伸線加工を施して半田極細線を製造することを課題解決
の手段とした。In the method for manufacturing a solder extra fine wire according to the present invention, a solder material containing Pb, In or Sn as a main component and having an oxygen concentration of 20 ppm or less is subjected to wire drawing under a temperature condition of 10 ° C. or less. The method of solving the problem was to manufacture a solder extra fine wire.
【００１１】請求項５記載の半田極細線の製造方法で
は、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし酸素濃度
が２０ppm以下で放射性α粒子のカウント数が０．５CPH
/cm2以下の半田材料に、温度１０℃以下の条件で伸線加
工を施して半田極細線を製造することを課題解決の手段
とした。In the method for producing a solder extra fine wire according to the present invention, the main component is any one of Pb, In and Sn, the oxygen concentration is 20 ppm or less, and the count number of radioactive α particles is 0.5 CPH.
A means for solving the problem was to produce a solder fine wire by subjecting a solder material having a density of / cm 2 or less to a temperature of 10 ° C. or less to perform wire drawing.
【００１２】請求項６記載の半田極細線の製造方法で
は、請求項４または５記載の半田極細線の製造方法より
得られた半田極細線の表面に、１０Å〜１００Å径の界
面活性剤をコーティングすることを課題解決の手段とし
た。In the method for producing a solder extra fine wire according to claim 6, a surface of the solder extra fine wire obtained by the method for producing a solder extra fine wire according to claim 4 or 5 is coated with a surfactant having a diameter of 10Å to 100Å. This was taken as a means to solve the problem.
【００１３】請求項１記載の半田極細線において、表面
酸化皮膜の酸素を含む酸素濃度を１００ppm以下に規定
したのは、酸素濃度が１００ppmを越えると、細線内に
ボイドや酸化物が発生し易くなるため、伸線可能な長さ
が大幅に低下してしまうと共に線径を１００μｍ以下に
出来なくなるためである。In the solder fine wire according to the first aspect, the oxygen concentration of oxygen contained in the surface oxide film is specified to be 100 ppm or less. When the oxygen concentration exceeds 100 ppm, voids and oxides are easily generated in the fine wire. Therefore, the wire drawable length is significantly reduced, and the wire diameter cannot be 100 μm or less.
【００１４】請求項２記載の半田極細線において、放射
性α粒子のカウント数を０．５CPH/cm2以下に規定した
のは、０．５CPH/cm2を越えると、メモリー素子等の配
線材に用いた場合に、ソフトエラーを生じ易くなるため
である。[0014] In the solder fine wire according to claim 2, of defining the count of radioactive α particles 0.5CPH / cm 2 or less, exceeds 0.5CPH / cm 2, a wiring material such as memory devices This is because soft errors are likely to occur when used.
【００１５】請求項３記載の半田極細線において、界面
活性剤の径を１０Å〜１００Åに規定したのは、１０Å
より小さくなると、半田極細線を保護する効果が得られ
なくなるためであり、１００Åを越えると、除去工程の
手間が増すだけで効果は向上していかないためである。In the solder extra fine wire according to the third aspect, the diameter of the surfactant is defined to be 10Å to 100Å is 10Å.
This is because if it becomes smaller, the effect of protecting the solder fine wire cannot be obtained, and if it exceeds 100 Å, the effect is not improved only by increasing the labor of the removing step.
【００１６】請求項４記載の半田極細線の製造方法にお
いて、酸素濃度を２０ppm以下に設定したのは、酸素濃
度が２０ppmを越えると、得られた半田極細線の酸素濃
度が１００ppmを越えてしまい、前述したように伸線可
能な長さが大幅に低下してしまうと共に線径を１００μ
ｍ以下に出来なくなるためである。In the method for manufacturing a solder fine wire according to claim 4, the oxygen concentration is set to 20 ppm or less. When the oxygen concentration exceeds 20 ppm, the oxygen concentration of the obtained solder fine wire exceeds 100 ppm. As mentioned above, the wire drawable length is greatly reduced and the wire diameter is 100μ.
This is because it cannot be less than m.
【００１７】また、請求項４ないし請求項６の半田極細
線の製造方法において、１０℃以下の温度条件に設定し
たのは、温度条件が１０℃を越えると、低温での加工硬
化が期待できず、材料自体の強度不足のためにテンショ
ン切れを生じ易くなるためである。Further, in the method for manufacturing a solder extra fine wire according to any one of claims 4 to 6, the temperature condition of 10 ° C or lower is set. When the temperature condition exceeds 10 ° C, work hardening at low temperature can be expected. The reason is that tension breakage easily occurs due to insufficient strength of the material itself.
【００１８】[0018]
【作用】Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし酸素
濃度が２０ppm以下で放射性α粒子のカウント数が０．
５CPH/cm2以下の半田材料に、１０℃以下の温度条件で
伸線加工を施して半田極細線を製造すると、表面酸化皮
膜の酸素を含む酸素濃度が１００ppm以下、放射性α粒
子のカウント数が０．５CPH/cm2以下、線径が１０〜１
００μｍの半田極細線をテンション切れやボイドを生じ
ることなく長尺にわたって製造することができる。The main component is any of Pb, In, and Sn, the oxygen concentration is 20 ppm or less, and the count number of radioactive α particles is 0.
When a solder extra fine wire is manufactured by subjecting a solder material of 5 CPH / cm 2 or less to a temperature condition of 10 ° C. or less, the oxygen concentration in the surface oxide film including oxygen is 100 ppm or less, and the number of radioactive α particles counted is 0.5 CPH / cm 2 or less, wire diameter 10 to 1
It is possible to produce a solder fine wire of 00 μm over a long length without breaking tension or generating voids.
【００１９】また、半田極細線の表面に、１０Å〜１０
０Å径の界面活性剤をコーティングすると、半田表面の
酸化を防止すると共にすべりを良くし、伸線時の半田粉
発生を抑制し、半田極細線自身への半田粉混入が防止さ
れる。On the surface of the solder fine wire, 10Å-10
Coating with a 0 Å diameter surfactant prevents oxidation of the solder surface, improves slippage, suppresses generation of solder powder during wire drawing, and prevents solder powder from mixing into the solder extra fine wire itself.
【００２０】[0020]
【実施例】以下、図面を参照して本発明の半田極細線お
よびその製造方法について詳しく説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The solder extra fine wires and the method for producing the same according to the present invention will be described in detail below with reference to the drawings.
【００２１】[0021]
【実施例１】本発明の半田極細線の製造に使用される製
造装置の一例を図１(a),(b)に示す。 この図におい
て、符号１は装置本体であり、この装置本体１には液体
窒素等の冷却液２が満たされている。装置本体１の内部
には、ハンダワイヤ６に伸線加工を施すためのダイス
９，１０，１１が設けられ、低温状態で行うために、冷
却液２に浸した状態となっている。さらに装置本体１内
には、ハンダワイヤ６を移動させるためのローラ１２，
１３が設置されている。このローラ１２，１３は、装置
本体１外部で、ベルト１４を介してモータ１５の動力が
伝達されるようになっている。また、装置本体１の外部
には、冷却液２の温度を一定に保つための熱交換器３が
接続されている。さらに、装置本体１の上部には、ハン
ダワイヤ６を巻き出すための巻き出し器４と、ハンダワ
イヤ６を低温伸線する前に予め所定量だけ室温伸線して
おくためのダイス７、低温伸線されたハンダワイヤ６を
最終的に室温伸線して線径を整えるためのダイス８、製
造されたハンダワイヤ６を巻き取るための巻き取り器５
が設けられている。Example 1 An example of a manufacturing apparatus used for manufacturing a solder extra fine wire of the present invention is shown in FIGS. 1 (a) and 1 (b). In this figure, reference numeral 1 is an apparatus main body, and the apparatus main body 1 is filled with a cooling liquid 2 such as liquid nitrogen. Inside the apparatus main body 1, dies 9, 10 and 11 for drawing the solder wire 6 are provided, and the die is immersed in the cooling liquid 2 in order to perform at a low temperature. Further, inside the apparatus main body 1, rollers 12 for moving the solder wire 6,
13 are installed. The power of the motor 15 is transmitted to the rollers 12 and 13 via the belt 14 outside the apparatus main body 1. A heat exchanger 3 for keeping the temperature of the cooling liquid 2 constant is connected to the outside of the apparatus body 1. Further, on the upper part of the apparatus body 1, an unwinder 4 for unwinding the solder wire 6, a die 7 for drawing the solder wire 6 at room temperature by a predetermined amount before the low temperature wire drawing, and a low temperature wire drawing. A die 8 for finally drawing the formed solder wire 6 at room temperature to adjust the wire diameter, and a winder 5 for winding up the manufactured solder wire 6.
Is provided.
【００２２】このように構成された製造装置を用いて半
田極細線を製造するには、まず、予め巻き出し器４より
取り出したハンダワイヤ６を図に示すように装置本体１
内に配して巻き取り器５にセットした後、冷却液２を満
たして、熱交換器３により装置本体１内を一定温度に保
つ。次に、モータ１５を作動させてローラ１２，１３を
一定速度で同じ向きに回転させると共に、巻き出し器４
および巻き取り器５を一定速度で矢印の向きに回転さ
せ、ハンダワイヤ６を一定速度で送り出す。すると、ハ
ンダワイヤ６は、ダイス７を通って室温伸線された後、
冷却液２で冷却された雰囲気で、ダイス９，１０，１１
を通されて低温伸線される。その後、ダイス８により最
終的に室温伸線されて線径を調整され、巻き取り器５に
よって回収される。In order to manufacture a solder extra fine wire using the manufacturing apparatus configured as described above, first, the solder wire 6 taken out from the unwinder 4 in advance is used as shown in FIG.
After being placed inside and set on the winder 5, the cooling liquid 2 is filled and the inside of the apparatus main body 1 is kept at a constant temperature by the heat exchanger 3. Next, the motor 15 is operated to rotate the rollers 12 and 13 in the same direction at a constant speed, and the unwinder 4
And the winder 5 is rotated at a constant speed in the direction of the arrow to feed the solder wire 6 at a constant speed. Then, after the solder wire 6 is drawn at room temperature through the die 7,
In the atmosphere cooled by the cooling liquid 2, the dice 9, 10, 11
And low temperature wire drawing. Then, the wire is finally drawn at room temperature by the die 8 to adjust the wire diameter, and then collected by the winder 5.
【００２３】この製造装置では、液体窒素による冷却液
２により冷却された雰囲気でダイス９，１０，１１によ
り伸線を行っているため、線径が１０〜１００μｍの半
田極細線をテンション切れやボイドを生じることなく長
尺にわたって製造することができる。In this manufacturing apparatus, wire drawing is performed by the dice 9, 10, and 11 in an atmosphere cooled by the cooling liquid 2 made of liquid nitrogen, so that a solder fine wire having a wire diameter of 10 to 100 μm is not tensioned or voided. It can be manufactured over a long length without causing.
【００２４】[0024]
【実施例２】実施例１に記載した製造方法を用いて、下
表に示した組成、酸素濃度、線径の半田極細線を製造
し、線径のばらつき、テンション切れの有無、伸線長さ
を調べた。結果を下表に示す。また比較例として、表面
酸化皮膜の酸素を含む酸素濃度が１００ppmを越える半
田極細線を製造した場合の結果も併せて示した（以下余
白）。Example 2 Using the manufacturing method described in Example 1, a solder fine wire having the composition, oxygen concentration, and wire diameter shown in the table below was manufactured, and there were variations in wire diameter, presence / absence of tension breakage, and wire drawing length. I checked it. The results are shown in the table below. In addition, as a comparative example, the results in the case of manufacturing a solder extra fine wire in which the oxygen concentration of the surface oxide film containing oxygen exceeds 100 ppm are also shown (the margin below).
【００２５】[0025]
【表１】 [Table 1]
【００２６】以上の結果より、実施例１に示した製造方
法を用いて、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分と
し、表面酸化皮膜の酸素を含む酸素濃度を１００ｐｐｍ
以下、線径を１０〜１００μｍに設定した半田極細線で
は、線径のばらつきが小さいうえ、テンション切れがな
く伸線長さを極めて長くできることが判った。From the above results, using the manufacturing method shown in Example 1, the oxygen concentration in the surface oxide film containing Pb, In or Sn as the main component and containing oxygen was 100 ppm.
In the following, it has been found that in the solder extra fine wire whose wire diameter is set to 10 to 100 μm, there is little variation in wire diameter, there is no tension breakage, and the wire drawing length can be made extremely long.
【００２７】[0027]
【実施例３】実施例１に記載した製造方法を用いて、下
表に示した組成、酸素濃度、放射性α粒子のカウント
数、線径の半田極細線を製造し、メモリー材料の接続材
料に用いた場合に発生するソフトエラーの個数を調べ
た。（全体個数ｎ＝１００００）結果を下表に示す。ま
た比較例として放射性α粒子のカウント数が０．５CPH/
cm2を越えている半田極細線を製造した場合の結果も併
せて示した（以下余白）。Example 3 Using the manufacturing method described in Example 1, solder fine wires having the composition, oxygen concentration, count of radioactive α particles and wire diameter shown in the table below were manufactured and used as a connecting material for a memory material. The number of soft errors that occurred when used was examined. (Total number n = 10000) The results are shown in the table below. As a comparative example, the count number of radioactive α particles is 0.5 CPH /
The results of the production of solder fine wires exceeding cm 2 are also shown (margin below).
【００２８】[0028]
【表２】 [Table 2]
【００２９】以上の結果より、放射性α粒子のカウント
数が０．５CPH/cm2以下の時、ソフトエラーの個数が極
めて少ないことが分かった。From the above results, it was found that the number of soft errors was extremely small when the count number of radioactive α particles was 0.5 CPH / cm 2 or less.
【００３０】[0030]
【実施例４】組成が９５％Ｐｂ−５％Ｓｎ、酸素濃度が
２０ｐｐｍ、線径が３０μｍ、放射性α粒子のカウント
数が０．１CPH/cm2である半田極細線に、さらに１０Å
〜１００Å径の界面活性材をコーティングして、１００
０ｍ伸線した場合の断線回数について調べた。結果を下
表に示す。また比較例として界面活性材をコーティング
していないもの、１００Åを越える界面活性材をコーテ
ィングしたものについての結果も併せて示した（以下余
白）。Example 4 A solder fine wire having a composition of 95% Pb-5% Sn, an oxygen concentration of 20 ppm, a wire diameter of 30 μm, and a radioactive α particle count number of 0.1 CPH / cm 2 was further added with 10Å.
~ 100Å diameter of surface-active agent coated, 100
The number of wire breakages when drawing 0 m was examined. The results are shown in the table below. In addition, as comparative examples, the results of those not coated with a surface active agent and those coated with a surface active agent exceeding 100 liters are also shown (hereinafter referred to as margins).
【００３１】[0031]
【表３】 [Table 3]
【００３２】以上の結果より、１０Å〜１００Å径の界
面活性材をコーティングすることにより、断線回数が減
少し、伸線性が向上することが判明した。From the above results, it was found that coating the surface-active material having a diameter of 10Å to 100Å reduces the number of wire breaks and improves the wire drawability.
【００３３】[0033]
【実施例５】組成が９０％Ｐｂ−１０％Ｓｎ、酸素濃度
が１０ｐｐｍ、放射性α粒子のカウント数が０．２CPH/
cm2である半田材料に、下表に示した温度で伸線加工し
て製造した半田極細線の線径、線径のばらつき、テンシ
ョン切れの有無、伸線長さを調べた。結果を下表に示
す。なお、比較例として室温で伸線加工して製造した半
田極細線の結果についても併せて示した。（以下余白）Example 5 Composition 90% Pb-10% Sn, Oxygen concentration 10 ppm, Radioactive α particle count 0.2 CPH /
The solder diameter of the solder material having a cm 2 was drawn at the temperatures shown in the table below, and the wire diameter, the dispersion of the wire diameter, the presence or absence of tension breakage, and the wire drawing length were investigated. The results are shown in the table below. In addition, as a comparative example, the results of solder fine wires manufactured by drawing at room temperature are also shown. (Below margin)
【００３４】[0034]
【表４】 [Table 4]
【００３５】以上の結果より、１０℃以下の温度で伸線
加工を行って製造した半田極細線では、線径のばらつき
が小さいうえ、テンション切れがなく伸線長さを極めて
長くできることが判った。From the above results, it has been found that the solder fine wire produced by performing the wire drawing process at a temperature of 10 ° C. or less has a small variation in the wire diameter, and the wire drawing length can be made extremely long without breaking the tension. ..
【００３６】[0036]
【実験例】冷却液２として−１９６℃に冷却された液体
窒素を用い、伸線するスピードを３０〜５０ｍ／ｍｉｎ
となるように巻き出しロール４、巻き取りロール５、ロ
ーラ１２，１３を回転させた。この結果、線径が３８±
１μｍの半田極細線が破断なく１００００ｍ伸線でき
た。この半田極細線のα値は、０．１cpH/cm2のものを
得る事ができた。[Experimental Example] Liquid nitrogen cooled to -196 ° C was used as the cooling liquid 2, and the drawing speed was 30 to 50 m / min.
The unwinding roll 4, the winding roll 5, and the rollers 12 and 13 were rotated so that As a result, the wire diameter is 38 ±
The 1 μm solder fine wire could be drawn by 10,000 m without breakage. It was possible to obtain an α value of this solder fine wire of 0.1 cpH / cm 2 .
【００３７】[0037]
【発明の効果】以上説明したように本発明の半田極細線
では、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし、表面
酸化皮膜の酸素を含む酸素濃度を１００ppm以下、線径
を１０〜１００μｍにしたものであるため、テンション
切れやボイドを生じる確率が小さく、また長尺にわたっ
て製造することが可能である。As described above, in the solder fine wire of the present invention, Pb, In, or Sn is the main component, the oxygen concentration of the surface oxide film containing oxygen is 100 ppm or less, and the wire diameter is 10 to 100 μm. Since it is made into a material, the probability of causing tension breakage and voids is small, and it is possible to manufacture over a long length.
【００３８】従って本発明の半田極細線によれば、ＨＩ
Ｃ（ハイブリッドＩＣ）、ＴＡＢ（テープ・オートメイ
テッド・ボンディング）、フリップチップ等におけるバ
ンプ形成や、超電導用ＩＣ、センサ等における配線材と
して好適に用いることができる。また、放射性α粒子の
カウント数を０．５CPH/cm2以下にすると、メモリー素
子等の接続材料に用いても、ソフトエラーを生じる確率
が小さいという効果を奏する。さらに、半田極細線の表
面に１０Å〜１００Å径の界面活性剤をコーティングす
ると、半田表面の酸化を防止すると共にすべりを良く
し、伸線時の半田粉発生を抑制し半田極細線自身への半
田粉混入を防止できる効果を奏する。Therefore, according to the solder fine wire of the present invention, HI
It can be preferably used as a bump material in C (hybrid IC), TAB (tape automated bonding), flip chip, etc., or as a wiring material in superconducting ICs, sensors, etc. Further, when the count number of radioactive α particles is 0.5 CPH / cm 2 or less, even if it is used as a connecting material for a memory element or the like, there is an effect that a soft error is unlikely to occur. Furthermore, by coating the surface of the solder extra fine wire with a surfactant having a diameter of 10Å to 100Å, it prevents oxidation of the solder surface and improves slippage, and suppresses the generation of solder powder during wire drawing, and solder to the extra fine solder wire itself. It has the effect of preventing powder mixture.
【００３９】また、本発明に係る半田極細線の製造方法
では、Ｐｂ，Ｉｎ，Ｓｎのいずれかを主成分とし酸素濃
度が２０ppm以下の半田材料に、１０℃以下の温度条件
で伸線加工を施して半田極細線を製造する方法であるた
め、大掛かりな装置を要せずに、３０μｍ〜１００μｍ
程度の線径を有する半田極細線を、線径のばらつきを小
さくして製造することができる。In the method for manufacturing a solder extra fine wire according to the present invention, a wire drawing process is performed on a solder material containing Pb, In or Sn as a main component and having an oxygen concentration of 20 ppm or less under a temperature condition of 10 ° C. or less. Since it is a method of manufacturing a solder extra fine wire by applying it, it does not require a large-scale device and is 30 μm to 100 μm.
It is possible to manufacture a solder fine wire having a wire diameter of a degree with a small variation in wire diameter.
【図１】本発明の半田極細線を製造するために使用され
る製造装置の一例を示す図であり、(a)は斜視図、(b)は
断面図である。FIG. 1 is a diagram showing an example of a manufacturing apparatus used for manufacturing a solder extra fine wire of the present invention, in which (a) is a perspective view and (b) is a sectional view.
６ ハンダワイヤ 6 solder wire
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/321 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 21/321
Claims (6)
し、表面酸化皮膜の酸素を含む酸素濃度が１００ppm以
下、線径が１０〜１００μｍであることを特徴とする半
田極細線。1. A solder extra fine wire comprising Pb, In or Sn as a main component and having an oxygen concentration including oxygen of a surface oxide film of 100 ppm or less and a wire diameter of 10 to 100 μm.
し、表面酸化皮膜の酸素を含む酸素濃度が１００ppm以
下、放射性α粒子のカウント数が０．５CPH/cm2以下、
線径が１０〜１００μｍであることを特徴とする半田極
細線。2. The main component of any of Pb, In, and Sn, the oxygen concentration of the surface oxide film containing oxygen is 100 ppm or less, and the count number of radioactive α particles is 0.5 CPH / cm 2 or less,
A solder extra fine wire having a wire diameter of 10 to 100 μm.
剤をコーティングしたことを特徴とする請求項１または
請求項２記載の半田極細線。3. The solder fine wire according to claim 1, wherein the surface is coated with a surfactant having a diameter of 10Å to 100Å.
し、酸素濃度が２０ppm以下の半田材料に、１０℃以下
の温度条件で伸線加工を施して半田極細線を製造するこ
とを特徴とする半田極細線の製造方法。4. A solder extra fine wire is manufactured by subjecting a solder material containing Pb, In or Sn as a main component and having an oxygen concentration of 20 ppm or less to a wire drawing process at a temperature condition of 10 ° C. or less. A method for manufacturing a solder extra fine wire.
し、酸素濃度が２０ppm以下、放射性α粒子のカウント
数が０．５CPH/cm2以下の半田材料に、１０℃以下の温
度条件で伸線加工を施して半田極細線を製造することを
特徴とする半田極細線の製造方法。5. A solder material containing Pb, In, or Sn as a main component and having an oxygen concentration of 20 ppm or less and a radioactive α particle count of 0.5 CPH / cm 2 or less under a temperature condition of 10 ° C. or less. A method for manufacturing a solder extra fine wire, which comprises subjecting a wire to a solder extra fine wire.
径の界面活性剤をコーティングすることを特徴とする請
求項４または請求項５記載の半田極細線の製造方法。6. The surface of the solder fine wire is 10Å to 100Å
The method for producing a solder extra fine wire according to claim 4 or 5, wherein a surface active agent having a diameter is coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3159127A JP2913908B2 (en) | 1991-06-28 | 1991-06-28 | Ultrafine solder wire and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3159127A JP2913908B2 (en) | 1991-06-28 | 1991-06-28 | Ultrafine solder wire and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0577087A true JPH0577087A (en) | 1993-03-30 |
| JP2913908B2 JP2913908B2 (en) | 1999-06-28 |
Family
ID=15686833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3159127A Expired - Fee Related JP2913908B2 (en) | 1991-06-28 | 1991-06-28 | Ultrafine solder wire and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2913908B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6148591A (en) * | 1995-10-11 | 2000-11-21 | Sealed Air Corporation | Packaging structure |
| JP2007302496A (en) * | 2006-05-10 | 2007-11-22 | Nikko Kinzoku Kk | High purity stannous oxide, powder of the same, and method for producing the stannous oxide |
| US9340850B2 (en) | 2005-07-01 | 2016-05-17 | Jx Nippon Mining & Metals Corporation | Process for producing high-purity tin |
| US9394590B2 (en) | 2010-03-16 | 2016-07-19 | Jx Nippon Mining & Metals Corporation | Low α-dose tin or tin alloy, and method for producing same |
| US9597754B2 (en) | 2011-03-07 | 2017-03-21 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire |
| US9666547B2 (en) | 2002-10-08 | 2017-05-30 | Honeywell International Inc. | Method of refining solder materials |
| US10711358B2 (en) | 2014-02-20 | 2020-07-14 | Jx Nippon Mining & Metals Corporation | Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2012318023B2 (en) | 2011-09-28 | 2016-04-28 | Jx Nippon Mining & Metals Corporation | High-purity lanthanum, method for producing same, sputtering target comprising high-purity lanthanum, and metal gate film comprising high-purity lanthanum as main component |
-
1991
- 1991-06-28 JP JP3159127A patent/JP2913908B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6148591A (en) * | 1995-10-11 | 2000-11-21 | Sealed Air Corporation | Packaging structure |
| US9666547B2 (en) | 2002-10-08 | 2017-05-30 | Honeywell International Inc. | Method of refining solder materials |
| US9340850B2 (en) | 2005-07-01 | 2016-05-17 | Jx Nippon Mining & Metals Corporation | Process for producing high-purity tin |
| JP2007302496A (en) * | 2006-05-10 | 2007-11-22 | Nikko Kinzoku Kk | High purity stannous oxide, powder of the same, and method for producing the stannous oxide |
| US9394590B2 (en) | 2010-03-16 | 2016-07-19 | Jx Nippon Mining & Metals Corporation | Low α-dose tin or tin alloy, and method for producing same |
| US9597754B2 (en) | 2011-03-07 | 2017-03-21 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire |
| US10711358B2 (en) | 2014-02-20 | 2020-07-14 | Jx Nippon Mining & Metals Corporation | Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2913908B2 (en) | 1999-06-28 |
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