JPH0575107A - Overvoltage protecting device for optical ignition thyristor - Google Patents

Overvoltage protecting device for optical ignition thyristor

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Publication number
JPH0575107A
JPH0575107A JP29026791A JP29026791A JPH0575107A JP H0575107 A JPH0575107 A JP H0575107A JP 29026791 A JP29026791 A JP 29026791A JP 29026791 A JP29026791 A JP 29026791A JP H0575107 A JPH0575107 A JP H0575107A
Authority
JP
Japan
Prior art keywords
light
overvoltage
thyristor
ignition
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29026791A
Other languages
Japanese (ja)
Other versions
JP3010603B2 (en
Inventor
Hirotoshi Kaneda
博利 兼田
Tetsuo Ide
哲雄 井出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3290267A priority Critical patent/JP3010603B2/en
Publication of JPH0575107A publication Critical patent/JPH0575107A/en
Application granted granted Critical
Publication of JP3010603B2 publication Critical patent/JP3010603B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To reduce an overvoltage while suppressing a decrease in dynamic characteristics and to improve reliability by providing a clamp circuit for suppressing an overvoltage generated at the time of an optical ignition between a gate electrode and a cathode electrode to a predetermined clamp voltage. CONSTITUTION:When a receiver of an optical ignition thyristor 1 is irradiated with a light signal 10 to be optically ignited, an overvoltage VGK is generated between G and K as a voltage VAK between A and K is lowered at a falling rate dV/dt, and applied to a Zener diode 11. The diode 11 becomes conductive during a period in which it exceeds its Zener breakdown voltage VZ to suppress the overvoltage VGK to the voltage VZ. Accordingly, if the voltage VZ is set to a range which does not exceed a gate allowable loss allowed between the G and the K at this time, a PB layer 5C disposed between a gate electrode 7G and an auxiliary gate electrode 8G is protected against a damage due to the overvoltage and a thermal breakdown due to a gate loss. Thus, dynamic characteristics such as optical ignition sensitivity, dV/dt characteristic, etc., can be stabilized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、電気点弧用のゲ−ト
電極を備えた光点弧サイリスタを光点弧した際、そのゲ
−ト電極とカソ−ド電極との間に発生する過電圧を抑制
する過電圧保護装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is generated between a gate electrode and a cathode electrode when a light ignition thyristor having a gate electrode for electric ignition is light-ignited. The present invention relates to an overvoltage protection device that suppresses overvoltage.

【0002】[0002]

【従来の技術】光信号でサイリスタを直接点弧する方式
の光点弧サイリスタでは、その光エネルギ−が発光ダイ
オ−ド等の光源では不足する場合が多いので、光点弧サ
イリスタでは点弧感度を電気点弧方式サイリスタのそれ
に比べて数十倍程度高める必要がある。ところが、点弧
感度の増大は急峻な電圧をアノ−ド,カソ−ド間(A/
K間と略称する)に印加したときの耐量,すなわちdv/
dt耐量の低下を招くことが知られている。また、dv/ dt
特性を改善するために光信号の受光部面積を縮小する
と、A/K間に急峻な立ち上がりの電流を流したときの
耐量すなわちdi/ dt耐量が低下してしまうという問題が
発生する。したがって、光点弧サイリスタにおいては点
弧感度,dv/ dt耐量,di/ dt耐量の各特性の協調をとる
ことが重要なポイントとされ、種々の改善がなされてい
る。すなわち、例えば、電気学会雑誌103巻1号「I
I. サイリスタ.整流素子」P3〜P6には、空乏層に
光信号を直接照射して点弧感度を増す構造、受光部にス
トライプを設けてキャリアを効果的に集め,点弧感度を
増す構造、dv/ dt補償電極を設ける構造、2段増幅ゲ−
ト構造としてdv/ dt耐量を増す構造等が紹介されてい
る。しかしながら、受光部を包囲して電気点弧用のゲ−
ト電極を備えた電気点弧可能な光点弧サイリスタについ
て、光点弧する際電気点弧用のゲ−ト電極とカソ−ド電
極間(G/K間と略称する)に発生する過電圧とその低
減構造には触れられていない。
2. Description of the Related Art In a light ignition thyristor of a type which directly ignites a thyristor with an optical signal, its light energy is often insufficient in a light source such as a light emitting diode. Need to be increased by several tens of times compared with that of the electric ignition type thyristor. However, the ignition sensitivity increases with a steep voltage between the anode and cathode (A /
(Abbreviated as "between K"), that is, withstand voltage, that is dv /
It is known to cause a decrease in dt resistance. Also, dv / dt
If the area of the light receiving portion of the optical signal is reduced in order to improve the characteristics, there arises a problem that the withstand capability when a steeply rising current is passed between A / K, that is, the di / dt withstand capability decreases. Therefore, in the light ignition thyristor, it is an important point to coordinate the characteristics of the ignition sensitivity, dv / dt resistance, and di / dt resistance, and various improvements have been made. That is, for example, the Institute of Electrical Engineers, Vol. 103, No. 1, “I
I. Thyristor. Rectifiers "P3 to P6" have a structure in which a depletion layer is directly irradiated with an optical signal to increase the firing sensitivity, a stripe is provided in the light receiving portion to effectively collect carriers to increase the firing sensitivity, dv / dt Structure with compensation electrode, two-stage amplification gate
A structure that increases the dv / dt resistance is introduced as a gating structure. However, by surrounding the light receiving part, a gate for electric ignition is provided.
For a light ignition thyristor capable of electric ignition equipped with a gate electrode, an overvoltage generated between the gate electrode and the cathode electrode (abbreviated as G / K) for electric ignition during light ignition The reduction structure is not touched.

【0003】図7は2段増幅ゲ−ト構造の光点弧サイリ
スタの要部を示す断面図、図8はその平面図である。図
において、光点弧サイリスタ1はその半導体基体5がP
E 層5A,NB 層5B,PB 層5C,および同心リング
状のNE 層5K,5G1,5G2で構成され、PE 層5
A側にはアノ−ド電極2Aが、NE 層側には互いに同心
リング状に電気点弧用のゲ−ト電極7G,2段増幅用の
補助ゲ−ト電極8G,およびカソ−ド電極3Kが設けら
れ、ゲ−ト電極7Gの中央部分にはPB 層5Cに直接光
信号10を照射する受光部9が蝕刻により形成される。
FIG. 7 is a sectional view showing an essential part of a light ignition thyristor having a two-stage amplification gate structure, and FIG. 8 is a plan view thereof. In the figure, the light ignition thyristor 1 has a semiconductor substrate 5 of P
E layer 5A, N B layer 5B, P B layer 5C, and a concentric ring-shaped N E layer 5K, consists of 5G1,5G2, P E layer 5
A is the side anode - cathode electrode 2A is, N E layer concentric rings shaped electric firing together the side gate - gate electrode 7G, 2-stage auxiliary gate for amplification - gate electrode 8G, and cathode - cathode electrode 3K is provided, and a light receiving portion 9 for directly irradiating the P B layer 5C with the optical signal 10 is formed by etching in the central portion of the gate electrode 7G.

【0004】このように構成された光点弧サイリスタ1
の光信号による点弧機構は、光点弧サイリスタのA/K
間に順電圧VAKを加えてNB 層5BとPB 層5Cとの接
合部に空乏層を形成した状態で、受光部9に光信号10
を照射してPB 層5Cにキャリアを励起させ、空乏層に
おけるホ−ルと電子の増倍作用を等しくすることにより
A/K間は導通(点弧)状態となり、その後は外部回路
の定数で決まる陽極流入電流IA が流れる。
The light ignition thyristor 1 thus constructed.
The ignition mechanism by the optical signal of is the A / K of the optical ignition thyristor.
A forward voltage V AK is applied between them to form a depletion layer at the junction between the N B layer 5B and the P B layer 5C, and an optical signal 10 is sent to the light receiving unit 9.
Are irradiated to excite carriers in the P B layer 5C to equalize the multiplication effect of the holes and electrons in the depletion layer, thereby establishing a conduction (ignition) state between A and K, and thereafter, the constant of the external circuit. The anode inflow current I A determined by

【0005】ところで、点弧の初期段階,すなわち光信
号10を照射した直後の電流通路は、図に実線矢印で示
すように、アノ−ド電極2A,NB 層5B,PB 層5
C,N E 層5G1,ゲ−ト電極7G,PB 層5C,NE
層5G2,補助ゲ−ト電極8G,PB 層5C,NE 層5
K,カソ−ド電極3KなるPB 層5Cに沿った経路とな
り、光点弧時には使用しない電気点弧用のゲ−ト電極7
Gとカソ−ド電極3Kとの間(G/K間と呼ぶ)に電位
差Vgkが生ずる。
By the way, the initial stage of ignition,
The current path immediately after irradiating No. 10 is indicated by the solid arrow in the figure.
So that the anode electrodes 2A, NBLayer 5B, PBLayer 5
C, N ELayer 5G1, Gate electrodes 7G, PBLayer 5C, NE
Layer 5G2, auxiliary gate electrodes 8G, PBLayer 5C, NELayer 5
K, cathode electrode 3K PBRoute along the layer 5C
The gate electrode 7 for electric ignition not used during light ignition
Potential between G and cathode 3K (referred to as G / K)
Difference VgkOccurs.

【0006】[0006]

【発明が解決しようとする課題】図9は従来技術におけ
る光点弧サイリスタの過電圧発生状態を示す模式化した
波形図であり、G/K間の電位差VGKの大きさは光点弧
時のA/K間電圧VAKの立ち下がりの急峻度dv/ dtに依
存して決まる。したがって、A/K間電圧の立ち下がり
が急峻である場合VGKが過電圧となり、その発生損失が
G/K間の許容損失を越えてしまい、ゲ−ト電極7Gと
補助ゲ−ト電極8G間でPB 層5Cに電流が集中し、こ
の部分で半導体基体5のPB 層5Cが熱破壊する事態に
発展する危険性がある。
FIG. 9 is a schematic waveform diagram showing an overvoltage generation state of a light ignition thyristor in the prior art, and the magnitude of the potential difference V GK between G / K is at the time of light ignition. It is determined depending on the steepness dv / dt of the fall of the A / K voltage V AK . Therefore, when the voltage between A / K drops sharply, V GK becomes an overvoltage, and the generated loss exceeds the allowable loss between G / K, so that between the gate electrode 7G and the auxiliary gate electrode 8G. in current is concentrated on the P B layer 5C, P B layer 5C of the semiconductor body 5 in this portion is at risk of developing a situation where the thermal breakdown.

【0007】一方、光点弧サイリスタ1を電気点弧する
場合には、ゲ−ト電極7Gに正のゲ−トパルスを加え、
B 層5Cにキャリアを注入して点弧するが、この場合
もゲ−ト電極7Gから補助ゲ−ト電極8Gを介してカソ
−ド電極3Kに電流が流れるので、光点弧の場合と同様
にゲ−ト許容損失を越える過電圧が発生しないよう配慮
が必要になる。
On the other hand, when the light ignition thyristor 1 is electrically ignited, a positive gate pulse is applied to the gate electrode 7G,
Carriers are injected into the P B layer 5C to ignite, but in this case as well, a current flows from the gate electrode 7G to the cathode electrode 3K through the auxiliary gate electrode 8G. Similarly, it is necessary to consider that an overvoltage that exceeds the gate allowable loss does not occur.

【0008】この発明の目的は、電気点弧用のゲ−ト電
極を有する光点弧サイリスタを光点弧する際、A/K間
電圧の急変に対応してG/K間に発生する過電圧を、光
点弧サイリスタの動特性を低下させることなく低減し、
半導体基体の熱破壊を防止できる信頼性の高い過電圧保
護装置を得ることにある。
An object of the present invention is to provide an overvoltage generated between G / K in response to a sudden change in voltage between A / K when a light ignition thyristor having a gate electrode for electric ignition is light-ignited. , Without reducing the dynamic characteristics of the light ignition thyristor,
An object of the present invention is to obtain a highly reliable overvoltage protection device capable of preventing thermal destruction of a semiconductor substrate.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
に、この発明によれば、光点弧用の受光部および電気点
弧用のゲ−ト電極と、主電流を通ずるアノ−ド電極およ
びカソ−ド電極とを有する光点弧サイリスタにおいて、
光点弧時に前記ゲ−ト電極と前記カソ−ド電極との間に
生ずる過電圧を所定のクランプ電圧に抑制するクランプ
回路を、前記ゲ−ト電極とカソ−ド電極との間に備えて
なるものとする。
In order to solve the above-mentioned problems, according to the present invention, a light-receiving part for light ignition, a gate electrode for electric ignition, and an anode electrode for passing a main current. And a light ignition thyristor with a cathode electrode,
A clamp circuit for suppressing an overvoltage generated between the gate electrode and the cathode electrode during light ignition to a predetermined clamp voltage is provided between the gate electrode and the cathode electrode. I shall.

【0010】クランプ回路のクランプ電圧が、発生する
過電圧より低く,かつ光点弧サイリスタの電気点弧時に
おけるゲ−ト許容損失以下となる電圧値に設定されてな
るものとする。
It is assumed that the clamp voltage of the clamp circuit is set to a voltage value which is lower than the generated overvoltage and which is equal to or less than the allowable gate loss during electric ignition of the light ignition thyristor.

【0011】クランプ回路が定電圧ダイオ−ドからな
り、この定電圧ダイオ−ドが光点弧サイリスタのゲ−ト
電極とカソ−ド電極との間にそのカソ−ド端子を前記ゲ
−ト電極側にして接続されてなるものとする。
The clamp circuit is composed of a constant voltage diode, and the constant voltage diode is provided between the gate electrode and the cathode electrode of the light ignition thyristor, and its cathode terminal is connected to the gate electrode. It shall be connected to the side.

【0012】また、クランプ回路が、コレクタが光点弧
サイリスタのゲ−ト電極に,エミッタが前記光点弧サイ
リスタのカソ−ド電極に接続されたNPNトランジスタ
と、そのコレクタ,ベ−ス間にカソ−ド端子を前記コレ
クタ側にして接続された定電圧ダイオ−ドとからなるも
のとする。
In the clamp circuit, the collector is connected to the gate electrode of the light ignition thyristor and the emitter is connected to the cathode electrode of the light ignition thyristor, and between the collector and the base. A constant voltage diode connected with the cathode terminal on the collector side.

【0013】さらに、クランプ回路が、ドレインが光点
弧サイリスタのゲ−ト電極に,ソ−スが前記光点弧サイ
リスタのカソ−ド電極に接続された電界効果トランジス
タと、そのドレイン,ゲ−ト間にカソ−ド端子を前記ド
レイン側にして接続された定電圧ダイオ−ドとからなる
ものとする。
Further, in the clamp circuit, the drain is connected to the gate electrode of the light ignition thyristor and the source is connected to the cathode electrode of the light ignition thyristor, and the drain and gate thereof. And a constant voltage diode connected with the cathode terminal on the drain side.

【0014】さらにまた、クランプ回路がシリコンサ−
ジアブソ−バからなるものとする。
Furthermore, the clamp circuit is a silicon server.
It shall consist of a absorber.

【0015】[0015]

【作用】この発明の構成において、過電圧保護装置を、
光点弧サイリスタのゲ−ト電極とカソ−ド電極との間に
接続されたクランプ回路とし、光点弧時にゲ−ト電極と
カソ−ド電極との間に生ずる過電圧を所定のクランプ電
圧に抑制するよう構成したことにより、光点弧時のA/
K間電圧の立ち下がりの急峻度に対応してクランプ電圧
を決めることにより、過電圧よる半導体基体の破壊を防
止できるとともに、電気点弧時のゲ−ト許容損失以下と
なるようクランプ電圧を決めることにより、光点弧を繰
り返しに伴って生ずる過電圧による半導体基体の熱破壊
を防止することができる。
In the configuration of the present invention, the overvoltage protection device is
A clamp circuit connected between the gate electrode and the cathode electrode of the light ignition thyristor, and the overvoltage generated between the gate electrode and the cathode electrode during light ignition is set to a predetermined clamp voltage. Since it is configured to suppress, A /
By determining the clamp voltage according to the steepness of the fall of the voltage between K, it is possible to prevent the breakdown of the semiconductor substrate due to overvoltage, and to determine the clamp voltage so that it is less than the allowable gate loss during electric ignition. As a result, it is possible to prevent thermal destruction of the semiconductor substrate due to overvoltage that occurs due to repeated light ignition.

【0016】また、クランプ回路を光点弧サイリスタの
ゲ−ト電極とカソ−ド電極との間にそのカソ−ド端子を
ゲ−ト電極側にして接続された定電圧ダイオ−ドとすれ
ば、光点弧サイリスタの光点弧時にG/K間に発生する
過電圧を定電圧ダイオ−ドのツェナ−降伏電圧以下に低
減することができ、半導体基体を過電圧から保護する機
能が得られる。
If the clamp circuit is a constant voltage diode connected between the gate electrode and the cathode electrode of the light ignition thyristor with its cathode terminal being the gate electrode side. The overvoltage generated between G and K during the light ignition of the light ignition thyristor can be reduced to the zener breakdown voltage of the constant voltage diode or less, and the function of protecting the semiconductor substrate from the overvoltage can be obtained.

【0017】さらに、クランプ回路をコレクタが光点弧
サイリスタのゲ−ト電極に,エミッタが光点弧サイリス
タのカソ−ド電極に接続されたNPNトランジスタと、
そのコレクタ,ベ−ス間にカソ−ド端子をコレクタ側に
して接続された定電圧ダイオ−ドとで構成すれば、光点
弧サイリスタの光点弧時にそのG/K間に生ずる過電圧
をNPNトランジスタの飽和電圧以下に抑制し、光点弧
サイリスタの半導体基体を過電圧から保護することがで
きる。さらにまた、NPNトランジスタを電界効果トラ
ンジスタに置き換えても上記と同様な過電圧の保護機能
が得られる。
Further, the clamp circuit is an NPN transistor having a collector connected to the gate electrode of the light ignition thyristor and an emitter connected to the cathode electrode of the light ignition thyristor.
If the constant voltage diode is connected between the collector and the base with the cathode terminal on the collector side, the overvoltage generated between the G and K during the light ignition of the light ignition thyristor is NPN. It is possible to suppress the voltage to be equal to or lower than the saturation voltage of the transistor and protect the semiconductor substrate of the light ignition thyristor from overvoltage. Furthermore, even if the NPN transistor is replaced with a field effect transistor, the same overvoltage protection function as described above can be obtained.

【0018】さらにまた、クランプ回路を、光点弧サイ
リスタのG/K間に接続されたシリコンサ−ジアブソ−
バで構成すれば、シリコンサ−ジアブソ−バが負性抵抗
特性領域で導通状態となるまでに要する時間が、光点弧
サイリスタが電気点弧するに要する時間とほぼ等しく過
電圧応答性に優れること、および過電圧をブレ−クオ−
バ電圧で検知して導通状態となり過電圧を急速に低減で
きることを利用し、過電圧をその大きさおよび持続時間
の両面から抑制できるので、光点弧サイリスタがその光
点弧感度,di/dt 特性,dv/dt 特性の協調を安定に保持
した状態で過電圧保護動作を行う機能が得られる。ま
た、シリコンサ−ジアブソ−バが負性抵抗特性を示す領
域では殆ど導通状態となるため、定電圧ダイオ−ドに比
べてシリコンサ−ジアブソ−バ内での発生損失が小さ
く、熱破壊の危険性が少ないので、信頼性の高いクラン
プ回路を小容量のシリコンサ−ジアブソ−バを用いて形
成でき、従って過電圧保護装置を小型化する機能が得ら
れる。
Furthermore, the clamp circuit is a silicon surge absorber connected between G / K of the light ignition thyristor.
If it is configured with a bar, the time required for the silicon surge absorber to become conductive in the negative resistance characteristic region is almost equal to the time required for the light ignition thyristor to electrically fire, and is excellent in overvoltage response, And overvoltage
Since the overvoltage can be suppressed from both aspects of its magnitude and duration by utilizing the fact that the overvoltage can be rapidly reduced by detecting with the voltage bar, the light ignition thyristor has its light ignition sensitivity, di / dt characteristics, It is possible to obtain the function to perform overvoltage protection operation while maintaining stable dv / dt characteristic coordination. In addition, since the silicon surge absorber is almost conductive in the region where the negative resistance characteristic is exhibited, the loss generated in the silicon surge absorber is smaller than that in the constant voltage diode, and the risk of thermal destruction is low. Since the number is small, a highly reliable clamp circuit can be formed by using a small-capacity silicon surge absorber, and therefore the function of miniaturizing the overvoltage protection device can be obtained.

【0019】[0019]

【実施例】以下、この発明を実施例に基づいて説明す
る。図1はこの発明の実施例になる光点弧サイリスタの
過電圧保護装置を図記号で簡略化して示す接続図、図2
は実施例装置の過電圧保護動作を示す波形図であり、従
来技術と同じ部分には同一参照符号を付すことにより重
複した説明を省略する。図において、光点弧サイリスタ
1の光点弧時には使用しない電気点弧用のゲ−ト電極7
Gとカソ−ド電極3Kとの間には、クランプ回路として
の定電圧ダイオ−ド(ツェナ−ダイオ−ド)11が、そ
のカソ−ド端子をゲ−ト電極側にして接続されて過電圧
保護装置を構成する。
EXAMPLES The present invention will be described below based on examples. FIG. 1 is a connection diagram schematically showing an overvoltage protection device for a light ignition thyristor according to an embodiment of the present invention, with reference symbols.
FIG. 4 is a waveform diagram showing the overvoltage protection operation of the embodiment apparatus, and the same parts as those of the conventional art are designated by the same reference numerals and the duplicated description will be omitted. In the figure, a gate electrode 7 for electric ignition which is not used during light ignition of the light ignition thyristor 1
A constant voltage diode (zener diode) 11 serving as a clamp circuit is connected between G and the cathode electrode 3K with the cathode terminal thereof serving as the gate electrode side to protect against overvoltage. Configure the device.

【0020】このように構成された光点弧サイリスタの
過電圧保護装置において、光点弧サイリスタ1の受光部
に光信号10を照射して光点弧すると、図2に示すよう
に光点弧サイリスタのA/K間の電圧VAKが立ち下がり
速度dv/ dtを保持して低下するに伴い、光点弧サイリス
タのG/K間には図7におけると同様に過電圧VGKが発
生し、ツェナダイオ−ド11に印加される。この過電圧
を受けたツェナ−ダイオ−ド11はそのツエナ−降伏電
圧VZ を越える期間導通状態となって過電圧V GKをツェ
ナ−降伏電圧VZ に抑制する。したがって、光点弧サイ
リスタを電気的に点弧する際光点弧サイリスタのG/K
間に許容されるゲ−ト許容損失を越えない範囲にツェナ
−降伏電圧VZ を設定しておけば、ゲ−ト電極7Gと補
助ゲ−ト電極8Gとの間に位置するPB 層5Cは、過電
圧による破壊およびゲ−ト損失による熱破壊から保護さ
れることになり、光点弧感度,dv/ dt特性,di/ dt特性
等の動特性が安定した光点弧サイリスタを得ることがで
きる。
In the light ignition thyristor configured as described above,
In the overvoltage protection device, the light receiving part of the light ignition thyristor 1
As shown in Fig. 2, when the optical signal 10 is applied to the
The voltage V between the A and K of the light ignition thyristorAKFalls
As the velocity dv / dt is maintained and decreased, light ignition thyris
The overvoltage V is applied between G and K in the same way as in FIG.GKFrom
And is applied to the Zener diode 11. This overvoltage
The Zener diode 11 received the Zener breakdown voltage.
Pressure VZIs turned on for a period exceeding V GKTse
Ner breakdown voltage VZSuppress to. Therefore, the light firing size
G / K of light firing thyristor when electrically igniting lister
Zener is within the range that does not exceed the allowable gate loss.
-Breakdown voltage VZIf set, the gate electrode 7G and
P located between the auxiliary gate electrode 8GBLayer 5C is overcharged
Protected against pressure damage and thermal damage due to gate loss
Light firing sensitivity, dv / dt characteristics, di / dt characteristics
It is possible to obtain a light ignition thyristor with stable dynamic characteristics such as
Wear.

【0021】すなわち、図1に示す過電圧保護装置にお
いて、ツェナ−降伏電圧VZ が27Vの定電圧ダイオ−
ド11を用い、光点弧時に光点弧サイリスタ1のG/K
間に発生する電圧を測定した結果、過電圧保護装置を設
けない場合200Vあった過電圧VGKを約30Vにまで
低減できることが実証された。なお、過電圧保護装置は
光点弧サイリスタの外部回路として構成されるので、光
点弧サイリスタの光点弧特性に影響を与えずに安定した
保護動作が得られる。
That is, in the overvoltage protection device shown in FIG. 1, the zener breakdown voltage V Z is a constant voltage diode with a voltage of 27 V.
G / K of light firing thyristor 1 at the time of light firing
As a result of measuring the voltage generated between them, it was proved that the overvoltage V GK , which was 200 V when the overvoltage protection device was not provided, could be reduced to about 30 V. Since the overvoltage protection device is configured as an external circuit of the light ignition thyristor, stable protection operation can be obtained without affecting the light ignition characteristics of the light ignition thyristor.

【0022】図3はこの発明の異なる実施例を示す接続
図であり、クランプ回路21がNPNトランジスタ23
とそのコレクタ,ベ−ス間にカソ−ド端子をコレクタ側
にして接続された定電圧ダイオ−ドとしてのツェナ−ダ
イオ−ド22とで構成され、NPNトランジスタ23の
コレクタは光点弧サイリスタ1のゲ−ト電極7Gに,エ
ミッタは光点弧サイリスタ1のカソ−ド電極3Kにそれ
ぞれ接続される。
FIG. 3 is a connection diagram showing a different embodiment of the present invention, in which the clamp circuit 21 is an NPN transistor 23.
And a zener diode 22 as a constant-voltage diode connected between the collector and the base with the cathode terminal on the collector side. The collector of the NPN transistor 23 is a light ignition thyristor 1. The gate electrode 7G and the emitter are connected to the cathode electrode 3K of the light ignition thyristor 1, respectively.

【0023】このように構成された過電圧保護装置にお
いて、光点弧サイリスタ1の受光部に光信号10を照射
して光点弧すると、光点弧サイリスタのG/K間に過電
圧が発生するが、定電圧ダイオ−ド22が動作してその
ツェナ−降伏電圧VZ にNPNトランジスタのコレク
タ,ベ−ス間の電圧VCBをクリップするので、NPNト
ランジスタ23のコレクタ,エミッタ間の電圧VCE、言
い換えれば光点弧サイリスタのG/K間の電圧VGKをN
PNトランジスタの飽和電圧に低減することができる。
In the overvoltage protection device constructed as described above, when the light receiving portion of the light ignition thyristor 1 is irradiated with the optical signal 10 to perform light ignition, an overvoltage is generated between G / K of the light ignition thyristor. Since the constant voltage diode 22 operates to clip the voltage V CB between the collector and the base of the NPN transistor to the zener-breakdown voltage V Z , the voltage V CE between the collector and the emitter of the NPN transistor 23, In other words, the voltage V GK between G / K of the light ignition thyristor is N
The saturation voltage of the PN transistor can be reduced.

【0024】図4はこの発明の他の実施例を示す接続図
であり、クランプ回路31を電界効果トランジスタ例え
ばNチャネルMOSFET33と、そのゲ−トGとドレ
インDとの間にカソ−ドをドレイン側にして接続された
定電圧ダイオ−ド32とで構成した点が前述の各実施例
と異なっており、NチャネルMOSFETのドレインは
光点弧サイリスタ1のゲ−ト電極7Gに,ソ−スSは光
点弧サイリスタのカソ−ド電極3Kにそれぞれ接続され
る。このように構成された過電圧保護装置の受光部に光
信号10を照射して光点弧すると、NチャネルMOSF
ETのドレイン,ゲ−ト間の電圧が定電圧ダイオ−ド3
2のツェナ−電圧に保持されるので、NPNトランジス
タを用いた前述の実施例と同様に光点弧サイリスタ1の
G/K間に生じた過電圧を低減することができる。
FIG. 4 is a connection diagram showing another embodiment of the present invention. A clamp circuit 31 is a field effect transistor, for example, an N-channel MOSFET 33, and a cathode is drained between its gate G and drain D. It is different from each of the above-described embodiments in that it is constituted by a constant voltage diode 32 connected on the side of the light source. The drain of the N-channel MOSFET is connected to the gate electrode 7G of the light ignition thyristor 1 and the source. Each S is connected to the cathode electrode 3K of the light ignition thyristor. When the light receiving portion of the overvoltage protection device configured as described above is irradiated with the optical signal 10 and is optically ignited, the N-channel MOSF
The voltage between the ET drain and gate is a constant voltage diode 3
Since the Zener voltage of 2 is maintained, the overvoltage generated between G / K of the light ignition thyristor 1 can be reduced as in the above-described embodiment using the NPN transistor.

【0025】図5はこの発明の異なる他の実施例を示す
接続図、図6は異なる他の実施例における過電圧保護動
作を示す波形図であり、クランプ回路41が、光点弧サ
イリスタ1のゲ−ト電極7Gとカソ−ド電極3Kとの間
に接続されたシリコンサ−ジアブソ−バで構成された点
が前述の各実施例と異なっている。また、クランプ回路
としてのシリコンサ−ジアブソ−バ41のブレ−クオ−
バ電圧VBRは、光点弧サイリスタ1を電気的に点弧する
際光点弧サイリスタのG/K間に許容されるゲ−ト許容
損失を越えない電圧値にあらかじめ設定され、光点弧時
にG/K間に発生する過電圧VGKをブレ−クオ−バ電圧
BRに抑制することにより、光点弧サイリスタを過電圧
破壊、またはこれに伴う熱破壊から保護するよう構成さ
れる。
FIG. 5 is a connection diagram showing another embodiment of the present invention, and FIG. 6 is a waveform diagram showing an overvoltage protection operation in another embodiment of the invention. The clamp circuit 41 is a gate of the light ignition thyristor 1. It differs from each of the above-described embodiments in that it is constituted by a silicon surge absorber connected between the gate electrode 7G and the cathode electrode 3K. Also, the breaker of the silicon surge absorber 41 as a clamp circuit is used.
The bar voltage V BR is preset to a voltage value which does not exceed the gate allowable loss allowed between G / K of the light ignition thyristor when the light ignition thyristor 1 is electrically ignited. By suppressing the overvoltage V GK which sometimes occurs between G and K to the breakover voltage V BR , the light ignition thyristor is configured to be protected from overvoltage breakdown or thermal breakdown accompanying it.

【0026】このように構成された過電圧保護装置にお
いて、シリコンサ−ジアブソ−バは、過電圧をそのブレ
−クオ−バ電圧VBRで感知して負性抵抗特性を示し,導
通状態となるまでに要する時間が3〜5μsであり、光
点弧サイリスタを電気点弧するに要する時間3μsとほ
ぼ等しいため、過電圧に対する応答性に優れるという特
長を有する。従って、光点弧サイリスタを光点弧する
と、図6に示すように光点弧サイリスタのA/K間の電
圧VAKが立ち下がり速度dv/ dtを保持して低下するに伴
い、光点弧サイリスタのG/K間には図9におけると同
様に過電圧VGKが発生し、シリコンサ−ジアブソ−バ4
1に印加されるが、シリコンサ−ジアブソ−バはこの過
電圧VGKの上昇に遅滞なく追従してブレ−クオ−バ電圧
BRに到達して負性抵抗特性を示し、その抵抗が殆ど零
に近い導通状態となるので、G/K間の過電圧はVBR
頂点として急速に低下する。すなわち、クランプ回路を
シリコンサ−ジアブソ−バ41で構成することにより、
過電圧VGKをその電圧の大きさおよび持続時間の両面で
抑制するので、前述の実施例における定電圧ダイオ−ド
では得られない優れた保護効果が得られる。その結果、
光点弧サイリスタのゲ−ト電極7Gと補助ゲ−ト電極8
Gとの間に位置するPB 層5Cは、過電圧破壊およびゲ
−ト損失による熱破壊から保護されるばかりでなく、光
点弧サイリスタのdv/dt 耐量の特性改善を可能にするの
で、光点弧感度感度およびdi/dt 耐量とdv/dt 耐量との
協調が取れた光点弧性能を有する光点弧サイリスタを提
供することにも貢献できる。
In the overvoltage protection device constructed as described above, the silicon surge absorber is required to detect the overvoltage with its breakover voltage V BR , exhibit a negative resistance characteristic, and become conductive. Since the time is 3 to 5 μs, which is substantially equal to the time 3 μs required to electrically ignite the light ignition thyristor, it has a feature of excellent responsiveness to overvoltage. Therefore, when the light-igniting thyristor is light-ignited, as shown in FIG. 6, as the voltage V AK between A / K of the light-igniting thyristor falls while maintaining the falling speed dv / dt, the light ignition An overvoltage V GK is generated between G and K of the thyristor as in FIG. 9, and the silicon surge absorber 4
However, the silicon surge absorber follows the rise of the overvoltage V GK without delay and reaches the breakover voltage V BR to exhibit a negative resistance characteristic, and its resistance becomes almost zero. Since the conductive state is close, the overvoltage between G / K drops rapidly at the peak of V BR . That is, by configuring the clamp circuit with the silicon surge absorber 41,
Since the overvoltage V GK is suppressed in terms of both the magnitude and duration of the voltage, an excellent protection effect which cannot be obtained by the constant voltage diode in the above-mentioned embodiment can be obtained. as a result,
Gate electrode 7G and auxiliary gate electrode 8 of the light ignition thyristor
The P B layer 5C located between the G and the G is not only protected from thermal breakdown due to overvoltage breakdown and gate loss, but also improves the dv / dt withstand characteristics of the light ignition thyristor. Ignition sensitivity It can also contribute to providing a light ignition thyristor having light ignition performance in which the di / dt withstand capability and the dv / dt withstand capability are coordinated.

【0027】一方、シリコンサ−ジアブソ−バは負性抵
抗特性を示す領域では殆ど導通状態となるため、例えば
定電圧ダイオ−ドを用いたクランプ回路に比べてシリコ
ンサ−ジアブソ−バ内での発生損失が少なく、従って小
容量のシリコンサ−ジアブソ−バを用いて信頼性が高
く,小型化されたクランプ回路を経済的に有利に提供で
きる利点が得られる。また、放電電流が一定レベル以下
に減少するとシリコンサ−ジアブソ−バはタ−ンオフ
し、つぎの保護動作の待機状態を回復するので、自己回
復性を有するクランプ回路が得られる。
On the other hand, since the silicon surge absorber becomes almost conductive in the region exhibiting the negative resistance characteristic, the loss generated in the silicon surge absorber is higher than that of a clamp circuit using a constant voltage diode, for example. Therefore, there is an advantage that a highly reliable and miniaturized clamp circuit can be economically provided by using a silicon surge absorber having a small capacity. When the discharge current decreases below a certain level, the silicon surge absorber is turned off and the standby state for the next protection operation is restored, so that a clamp circuit having self-healing property can be obtained.

【0028】[0028]

【発明の効果】この発明は前述のように、過電圧保護装
置を、光点弧サイリスタのゲ−ト電極とカソ−ド電極と
の間に接続されたクランプ回路とし、光点弧時にゲ−ト
電極とカソ−ド電極との間に生ずる過電圧を所定のクラ
ンプ電圧に抑制するよう構成した。その結果、光点弧時
のA/K間電圧の立ち下がりの急峻度に対応してクラン
プ電圧を決めることにより、従来技術で問題となった過
電圧による半導体基体の破壊を防止できるとともに、ゲ
−ト許容損失以下となるようクランプ電圧を決めること
により、光点弧の繰り返しによって生ずる半導体基体の
熱破壊をも防止することができ、したがって動作特性の
安定した光点弧サイリスタを提供することができる。
As described above, the present invention uses the overvoltage protection device as the clamp circuit connected between the gate electrode and the cathode electrode of the light ignition thyristor, and the gate circuit is provided at the time of light ignition. An overvoltage generated between the electrode and the cathode electrode is suppressed to a predetermined clamp voltage. As a result, by determining the clamp voltage in accordance with the steepness of the fall of the A / K voltage at the time of light ignition, it is possible to prevent the semiconductor substrate from being destroyed by overvoltage, which is a problem in the prior art, and to The thermal breakdown of the semiconductor substrate caused by repeated light ignition can be prevented by determining the clamp voltage so as to be equal to or less than the allowable power dissipation, and thus a light ignition thyristor with stable operation characteristics can be provided. ..

【0029】また、クランプ回路を光点弧サイリスタの
ゲ−ト電極とカソ−ド電極との間にそのカソ−ド端子を
前記ゲ−ト電極側にして接続された定電圧ダイオ−ドと
すれば、従来光点弧サイリスタの光点弧時にG/K間に
発生した過電圧例えば200Vを、定電圧ダイオ−ドの
ツェナ−降伏電圧近く例えば30V程度に抑制し、過電
圧による半導体基体の破壊を防止できるとともに、光点
弧サイリスタのG/K間に1個の定電圧ダイオ−ドを接
続するだけの簡素なクランプ回路を、光点弧サイリスタ
の外部回路として付加するだけで光点弧サイリスタを保
護できるので、電気点弧用のゲ−ト電極を有する種々の
光点弧サイリスタ,ことに高電圧大容量の光点弧サイリ
スタに適用することにより、その信頼性および経済性の
向上に大きな効果が得られる。
The clamp circuit is a constant voltage diode connected between the gate electrode and the cathode electrode of the light ignition thyristor with its cathode terminal being the gate electrode side. For example, an overvoltage, for example, 200 V, generated between G and K at the time of light ignition of a conventional light ignition thyristor is suppressed to about 30 V, which is close to the zener breakdown voltage of a constant voltage diode, to prevent the semiconductor substrate from being damaged by the overvoltage. In addition, the light ignition thyristor can be protected simply by adding a simple clamp circuit that connects only one constant voltage diode between G / K of the light ignition thyristor as an external circuit of the light ignition thyristor. Therefore, by applying it to various light-igniting thyristors having a gate electrode for electric ignition, especially to a light-voltage thyristor having a high voltage and a large capacity, it has a great effect on the improvement of its reliability and economical efficiency. Obtained.

【0030】さらに、クランプ回路をNPNトランジス
タと、そのコレクタ,ベ−ス間に接続された定電圧ダイ
オ−ドとで構成すれば、光点弧サイリスタの光点弧時に
そのG/K間に生ずる過電圧をNPNトランジスタの飽
和電圧以下に抑制し、光点弧サイリスタを過電圧から保
護する過電圧保護装置を備えた光点弧サイリスタが得ら
れる。さらにまた、NPNトランジスタを電界効果トラ
ンジスタに置き換えても上記と同様な過電圧の保護機能
を有する動作特性が安定した光点弧サイリスタを提供で
きる。
Further, if the clamp circuit is composed of an NPN transistor and a constant voltage diode connected between the collector and the base of the NPN transistor, it occurs between G and K when the light is ignited by the light ignition thyristor. It is possible to obtain a light ignition thyristor equipped with an overvoltage protection device that suppresses the overvoltage to a saturation voltage of the NPN transistor or less and protects the light ignition thyristor from the overvoltage. Furthermore, even if the NPN transistor is replaced with a field effect transistor, it is possible to provide a light ignition thyristor having the same overvoltage protection function and stable operation characteristics as described above.

【0031】さらにまた、クランプ回路をシリコンサ−
ジアブソ−バで構成すれば、シリコンサ−ジアブソ−バ
が持つ過電圧応答性および負性抵抗特性を活用して、G
/K間過電圧をその大きさおよび持続時間の両面から抑
制できるので、光点弧サイリスタがその光点弧感度,di
/dt 特性,dv/dt 特性等の動特性を安定に保持した状態
で過電圧保護動作を行う機能を有する過電圧保護装置を
備えた光点弧サイリスタを提供することができる。ま
た、シリコンサ−ジアブソ−バが負性抵抗特性を示す領
域では殆ど導通状態となるため、シリコンサ−ジアブソ
−バ内での発生損失が少なく、従って小容量のシリコン
サ−ジアブソ−バを用いて小型化されたクランプ回路を
有する過電圧保護装置を経済的に有利に提供することが
できる。
Furthermore, the clamp circuit is made of silicon.
If it is configured with a di-absorber, the over voltage responsiveness and negative resistance characteristic of the silicon di-
Since the overvoltage between / K can be suppressed from both its magnitude and duration, the light ignition thyristor has its light ignition sensitivity, di
It is possible to provide a light ignition thyristor equipped with an overvoltage protection device having a function of performing an overvoltage protection operation while stably maintaining dynamic characteristics such as / dt characteristics and dv / dt characteristics. Further, since the silicon surge absorber is almost in the conductive state in the region showing the negative resistance characteristic, the loss generated in the silicon surge absorber is small, and therefore the silicon surge absorber having a small capacity is used for miniaturization. An overvoltage protection device having a clamp circuit can be provided economically advantageously.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例になる光点弧サイリスタの過
電圧保護装置を示す接続図
FIG. 1 is a connection diagram showing an overvoltage protection device for a light ignition thyristor according to an embodiment of the present invention.

【図2】実施例装置の過電圧保護動作を示す波形図FIG. 2 is a waveform diagram showing an overvoltage protection operation of the device of the embodiment.

【図3】この発明の異なる実施例を示す接続図FIG. 3 is a connection diagram showing a different embodiment of the present invention.

【図4】この発明の他の実施例を示す接続図FIG. 4 is a connection diagram showing another embodiment of the present invention.

【図5】この発明の異なる他の実施例を示す接続図FIG. 5 is a connection diagram showing another embodiment of the present invention.

【図6】この発明の異なる他の実施例における過電圧保
護動作を示す波形図
FIG. 6 is a waveform diagram showing an overvoltage protection operation in another embodiment of the invention.

【図7】2段増幅ゲ−ト構造の光点弧サイリスタの要部
を示す断面図
FIG. 7 is a cross-sectional view showing a main part of a light ignition thyristor having a two-stage amplification gate structure.

【図8】2段増幅ゲ−ト構造の光点弧サイリスタの要部
を示す平面図
FIG. 8 is a plan view showing a main part of a light ignition thyristor having a two-stage amplification gate structure.

【図9】従来技術における光点弧サイリスタの過電圧発
生状態を示す波形図
FIG. 9 is a waveform chart showing an overvoltage generation state of a light ignition thyristor in the prior art.

【符号の説明】[Explanation of symbols]

1 光点弧サイリスタ 2A アノ−ド電極 3K カソ−ド電極 5 半導体基体 5A PE 層 5B NB 層 5C PB 層 5K NE 層 5G1E 層 5G2E 層 7G ゲ−ト電極(電気点弧用) 8G 補助ゲ−ト電極 9 受光部 10 光信号 11 クランプ回路(定電圧ダイオ−ド) 21 クランプ回路 22 定電圧ダイオ−ド 23 NPNトランジスタ 31 クランプ回路 32 定電圧ダイオ−ド 33 電界効果トランジスタ 41 クランプ回路(シリコンサ−ジアブソ−バ) VGK 過電圧 VZ クランプ電圧(ツェナ−降伏電圧) VBR クランプ電圧(ブレ−クオ−バ電圧) C コレクタ D ドレイン E エミッタ G ゲ−ト S ソ−ス1 light triggered thyristor 2A anode - cathode electrode 3K cathode - cathode electrode 5 semiconductor body 5A P E layer 5B N B layer 5C P B layer 5K N E layer 5 G1 N E layer 5 G2 N E layer 7G gate - gate electrode ( (For electric ignition) 8G auxiliary gate electrode 9 light receiving part 10 optical signal 11 clamp circuit (constant voltage diode) 21 clamp circuit 22 constant voltage diode 23 NPN transistor 31 clamp circuit 32 constant voltage diode 33 electric field Effect transistor 41 Clamp circuit (Silicon surge absorber) V GK Overvoltage V Z Clamp voltage (Zener breakdown voltage) V BR Clamp voltage (Break over voltage) C Collector D Drain E Emitter G Gate S source Su

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】光点弧用の受光部および電気点弧用のゲ−
ト電極と、主電流を通ずるアノ−ド電極およびカソ−ド
電極とを有する光点弧サイリスタにおいて、光点弧時に
前記ゲ−ト電極と前記カソ−ド電極との間に生ずる過電
圧を所定のクランプ電圧に抑制するクランプ回路を、前
記ゲ−ト電極とカソ−ド電極との間に備えてなることを
特徴とする光点弧サイリスタの過電圧保護装置。
1. A light receiving part for light ignition and a gate for electric ignition.
In a light ignition thyristor having a gate electrode and an anode electrode and a cathode electrode through which a main current flows, an overvoltage generated between the gate electrode and the cathode electrode during light ignition is set to a predetermined value. An overvoltage protection device for a light ignition thyristor, comprising a clamp circuit for suppressing a clamp voltage between the gate electrode and the cathode electrode.
【請求項2】クランプ回路のクランプ電圧が、光点弧サ
イリスタのゲ−ト電極,カソ−ド電極間に生ずる過電圧
より低く,かつ光点弧サイリスタの電気点弧時における
ゲ−ト許容損失以下となる電圧値に設定されてなること
を特徴とする請求項1記載の光点弧サイリスタの過電圧
保護装置。
2. The clamp voltage of the clamp circuit is lower than the overvoltage generated between the gate electrode and the cathode electrode of the light-ignition thyristor and less than the allowable gate loss during electric ignition of the light-ignition thyristor. The overvoltage protection device for a light ignition thyristor according to claim 1, characterized in that the voltage value is set to
【請求項3】クランプ回路が定電圧ダイオ−ドからな
り、この定電圧ダイオ−ドが光点弧サイリスタのゲ−ト
電極とカソ−ド電極との間にそのカソ−ド端子を前記ゲ
−ト電極側にして接続されてなることを特徴とする請求
項1記載の光点弧サイリスタの過電圧保護装置。
3. A clamp circuit is composed of a constant voltage diode, and the constant voltage diode is provided between the gate electrode and the cathode electrode of the light ignition thyristor, the cathode terminal of which is connected to the gate terminal. The overvoltage protection device for a light ignition thyristor according to claim 1, wherein the overvoltage protection device is connected on the side of the gate electrode.
【請求項4】クランプ回路が、コレクタが光点弧サイリ
スタのゲ−ト電極に,エミッタが前記光点弧サイリスタ
のカソ−ド電極に接続されたNPNトランジスタと、そ
のコレクタ,ベ−ス間にカソ−ド端子を前記コレクタ側
にして接続された定電圧ダイオ−ドとからなることを特
徴とする請求項1記載の光点弧サイリスタの過電圧保護
装置。
4. A clamp circuit comprising: an NPN transistor having a collector connected to the gate electrode of the light-ignition thyristor and an emitter connected to the cathode electrode of the light-ignition thyristor, and between the collector and the base thereof. 2. An overvoltage protection device for a light ignition thyristor according to claim 1, wherein the overvoltage protection device comprises a constant voltage diode connected with the cathode terminal on the collector side.
【請求項5】クランプ回路が、ドレインが光点弧サイリ
スタのゲ−ト電極に,ソ−スが前記光点弧サイリスタの
カソ−ド電極に接続された電界効果トランジスタと、そ
のドレイン,ゲ−ト間にカソ−ド端子を前記ドレイン側
にして接続された定電圧ダイオ−ドとからなることを特
徴とする請求項1記載の光点弧サイリスタの過電圧保護
装置。
5. A clamp circuit in which a drain is connected to a gate electrode of a light ignition thyristor and a source is connected to a cathode electrode of the light ignition thyristor, and a drain and gate thereof. 2. An over-voltage protection device for a light ignition thyristor according to claim 1, further comprising a constant voltage diode connected between the cathode and the cathode with the cathode terminal serving as the drain side.
【請求項6】クランプ回路がシリコンサ−ジアブソ−バ
からなることを特徴とする請求項1記載の光点弧サイリ
スタの過電圧保護装置。
6. The overvoltage protection device for a light ignition thyristor according to claim 1, wherein the clamp circuit comprises a silicon surge absorber.
JP3290267A 1991-03-15 1991-11-07 Overvoltage protection device for light-ignition thyristors Expired - Fee Related JP3010603B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3290267A JP3010603B2 (en) 1991-03-15 1991-11-07 Overvoltage protection device for light-ignition thyristors

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3-49971 1991-03-15
JP4997191 1991-03-15
JP3290267A JP3010603B2 (en) 1991-03-15 1991-11-07 Overvoltage protection device for light-ignition thyristors

Publications (2)

Publication Number Publication Date
JPH0575107A true JPH0575107A (en) 1993-03-26
JP3010603B2 JP3010603B2 (en) 2000-02-21

Family

ID=26390406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3290267A Expired - Fee Related JP3010603B2 (en) 1991-03-15 1991-11-07 Overvoltage protection device for light-ignition thyristors

Country Status (1)

Country Link
JP (1) JP3010603B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1160965A2 (en) * 2000-06-01 2001-12-05 Liebert Corporation Apparatus and method for rapid fault detection and transfer in a utility-interactive uninterruptible power supply
CN109698683A (en) * 2017-10-23 2019-04-30 新乡市振源电器股份有限公司 The driving device and high-tension apparatus of high-pressure thyristor
CN114361288A (en) * 2022-01-04 2022-04-15 中国工程物理研究院流体物理研究所 High-power silicon carbide-based light-triggered multi-gate semiconductor switch chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1160965A2 (en) * 2000-06-01 2001-12-05 Liebert Corporation Apparatus and method for rapid fault detection and transfer in a utility-interactive uninterruptible power supply
EP1160965A3 (en) * 2000-06-01 2002-07-31 Liebert Corporation Apparatus and method for rapid fault detection and transfer in a utility-interactive uninterruptible power supply
US6768223B2 (en) 2000-06-01 2004-07-27 Liebert Corporation Apparatus and method for rapid fault detection and transfer in a utility-interactive uninterruptible power supply
CN109698683A (en) * 2017-10-23 2019-04-30 新乡市振源电器股份有限公司 The driving device and high-tension apparatus of high-pressure thyristor
CN114361288A (en) * 2022-01-04 2022-04-15 中国工程物理研究院流体物理研究所 High-power silicon carbide-based light-triggered multi-gate semiconductor switch chip

Also Published As

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