JPH0573786A - Photoelectric smoke sensor - Google Patents

Photoelectric smoke sensor

Info

Publication number
JPH0573786A
JPH0573786A JP23062391A JP23062391A JPH0573786A JP H0573786 A JPH0573786 A JP H0573786A JP 23062391 A JP23062391 A JP 23062391A JP 23062391 A JP23062391 A JP 23062391A JP H0573786 A JPH0573786 A JP H0573786A
Authority
JP
Japan
Prior art keywords
conversion element
photoelectric conversion
smoke
circuit
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23062391A
Other languages
Japanese (ja)
Inventor
Hironori Kami
浩則 上
Tomizo Terasawa
富三 寺澤
Toshio Fujimura
俊夫 藤村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP23062391A priority Critical patent/JPH0573786A/en
Publication of JPH0573786A publication Critical patent/JPH0573786A/en
Pending legal-status Critical Current

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  • Fire-Detection Mechanisms (AREA)

Abstract

PURPOSE:To prevent the occurrence of erroneous report based on the abnormality of a photoelectric conversion element by providing a means which detects the abnormality of the photoelectric conversion element which detects scattered light due to smoke. CONSTITUTION:When a control signal Vc from a control circuit 10 is in the low level, a PMOS transistor TR Q1 is turned on, and an NMOS TR Q2 is turned on. Consequently, the drain (d) of the TR Q2 goes to the low level to operate an amplifying and operating circuit 20. If leak occurs in a photoelectric conversion element 2, a potential Vs of the source (s) of the TR Q2 rises. Therefore, the TR Q2 cannot be turned on. At this time, a potential Vd of the drain (d) of the TR Q2 is always in the high level independently of the control signal Vc, and the amplifying and operating circuit 20 is not operated. Thus, the occurrence of erroneous report due to the abnormal current of leak in the photoelectric conversion element 2 is prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、煙の散乱光を光電変換
素子で検出することにより火災を感知する光電式煙感知
器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric smoke detector that detects a fire by detecting scattered light of smoke with a photoelectric conversion element.

【0002】[0002]

【従来の技術】図2は従来の光電式煙感知器のブロック
図である。以下、その構成及び動作について説明する。
発光素子1は制御回路10により間欠的に光信号を発生
する。発光素子1からの光の放射方向と、光電変換素子
2による光の受光方向とは異なり、煙感知器内に煙が存
在しないときには、光電変換素子2は光をほとんど受光
しない。一方、煙感知器内に煙が存在するときには、発
光素子1からの光は煙によって散乱されるので、光電変
換素子2は煙による散乱光を受光する。散乱光は極めて
微弱なものであるので、受光アンプ21にて増幅した
後、比較回路22にて所定の基準レベルと比較する。比
較回路22の出力はカウント回路23にてカウントさ
れ、所定回数以上、基準レベルを越える受光検出信号が
得られたときには、発報回路30にて煙感知信号を発報
する。比較回路22は煙濃度が所定濃度以上であるか否
かを判定しており、カウント回路23は電磁ノイズなど
による誤動作を防ぐためにカウント処理を行っている。
2. Description of the Related Art FIG. 2 is a block diagram of a conventional photoelectric smoke detector. The configuration and operation will be described below.
The light emitting element 1 intermittently generates an optical signal by the control circuit 10. Unlike the light emitting direction of the light emitting element 1 and the light receiving direction of the photoelectric conversion element 2, the photoelectric conversion element 2 receives almost no light when smoke is not present in the smoke sensor. On the other hand, when smoke is present in the smoke sensor, the light from the light emitting element 1 is scattered by the smoke, so the photoelectric conversion element 2 receives the scattered light by the smoke. Since the scattered light is extremely weak, it is amplified by the light receiving amplifier 21 and then compared with a predetermined reference level by the comparison circuit 22. The output of the comparison circuit 22 is counted by the count circuit 23, and when a light reception detection signal exceeding the reference level is obtained a predetermined number of times or more, the alarm circuit 30 issues a smoke detection signal. The comparison circuit 22 determines whether or not the smoke density is equal to or higher than a predetermined density, and the count circuit 23 performs a counting process in order to prevent malfunction due to electromagnetic noise or the like.

【0003】[0003]

【発明が解決しようとする課題】上述の従来例におい
て、受光アンプ21と比較回路22、カウント回路23
を含む増幅・演算回路20は、制御回路10からの制御
信号に同期して、煙による散乱光を検出している。光電
変換素子2はフォトダイオードよりなり、逆バイアス電
圧を印加されている。そして、発光素子1からの光が煙
により散乱されて、光電変換素子2に受光されると、光
電変換素子2には逆方向に微弱な光電流が流れる。この
光電流を受光アンプ21により増幅して煙を検出するも
のである。ところが、煙による光の散乱が無くても、光
電変換素子2が経時変化等により劣化すると、逆バイア
ス電圧の下では、微弱なリーク(漏れ電流)が流れるこ
とがあり、その大きさは煙による散乱光に基づく微弱な
電流と同程度のnAオーダーであり、誤報の原因になる
という問題があった。
In the above-mentioned conventional example, the light receiving amplifier 21, the comparing circuit 22, and the counting circuit 23 are provided.
The amplification / arithmetic circuit 20 including is detecting scattered light due to smoke in synchronization with the control signal from the control circuit 10. The photoelectric conversion element 2 is composed of a photodiode and is applied with a reverse bias voltage. Then, when the light from the light emitting element 1 is scattered by smoke and is received by the photoelectric conversion element 2, a weak photocurrent flows in the photoelectric conversion element 2 in the opposite direction. This photocurrent is amplified by the light receiving amplifier 21 to detect smoke. However, even if there is no scattering of light due to smoke, a weak leak (leakage current) may flow under a reverse bias voltage if the photoelectric conversion element 2 deteriorates due to aging or the like. There was a problem that the current was of the order of nA, which was about the same as the weak current based on the scattered light, and it caused a false alarm.

【0004】本発明はこのような点に鑑みてなされたも
のであり、その目的とするところは、光電式煙感知器に
おいて、光電変換素子のリークなどの異常発生を検出す
る機能を付加して、感知器の誤動作を防止することにあ
る。
The present invention has been made in view of the above circumstances, and an object thereof is to add a function of detecting an abnormal occurrence such as a leak of a photoelectric conversion element in a photoelectric smoke detector. , To prevent malfunction of the sensor.

【0005】[0005]

【課題を解決するための手段】本発明にあっては、上記
の課題を解決するために、図1に示すように、煙の散乱
光を光電変換素子2で検出することにより火災を感知す
る光電式煙感知器において、前記光電変換素子2の異常
を検出する手段を設けたことを特徴とするものである。
According to the present invention, in order to solve the above problems, as shown in FIG. 1, a photoelectric conversion element 2 detects scattered light of smoke to detect a fire. The photoelectric smoke detector is characterized in that means for detecting an abnormality in the photoelectric conversion element 2 is provided.

【0006】[0006]

【作用】本発明では、光電式煙感知器において、煙の散
乱光を検出するための光電変換素子2の異常を検出する
手段を設けたので、リークなどの異常が生じたときに
は、これを直ちに検出することができ、感知器の誤動作
を防ぐことができる。
In the present invention, the photoelectric smoke detector is provided with means for detecting an abnormality of the photoelectric conversion element 2 for detecting scattered light of smoke. Therefore, when an abnormality such as a leak occurs, the abnormality is immediately detected. It can be detected and the malfunction of the sensor can be prevented.

【0007】[0007]

【実施例】図1は本発明の一実施例の回路図である。以
下、その回路構成について説明する。電源線EにはPM
OSトランジスタQ1のソースが接続されており、PM
OSトランジスタQ1のドレインは抵抗R1と抵抗R2
の直列回路を介して接地線Gに接続されている。抵抗R
1と抵抗R2の接続点は、NMOSトランジスタQ2の
ゲートgに接続されている。NMOSトランジスタQ2
のドレインdは抵抗R3を介して電源線Eに接続されて
おり、ソースsは抵抗R4を介して接地線Gに接続され
ている。光電変換素子2を構成するフォトダイオードの
カソードは電源線Eに接続されており、アノードは電流
−電圧変換用の抵抗Rを介してNMOSトランジスタQ
2のソースsに接続されている。抵抗Rの両端電圧は増
幅・演算回路20に入力されている。NMOSトランジ
スタQ2のドレインdの電位Vdは、増幅・演算回路2
0と制御回路10に入力されている。また、制御回路1
0からの制御信号VcはPMOSトランジスタQ1のゲ
ートに入力されている。
FIG. 1 is a circuit diagram of an embodiment of the present invention. The circuit configuration will be described below. PM on the power line E
The source of the OS transistor Q1 is connected and PM
The drain of the OS transistor Q1 has resistors R1 and R2.
Is connected to the ground line G via a series circuit. Resistance R
The connection point between 1 and the resistor R2 is connected to the gate g of the NMOS transistor Q2. NMOS transistor Q2
The drain d is connected to the power supply line E via the resistor R3, and the source s is connected to the ground line G via the resistor R4. The cathode of the photodiode forming the photoelectric conversion element 2 is connected to the power supply line E, and the anode is connected to the NMOS transistor Q via the resistor R for current-voltage conversion.
2 sources s. The voltage across the resistor R is input to the amplification / operation circuit 20. The potential Vd of the drain d of the NMOS transistor Q2 is the amplification / operation circuit 2
0 and is input to the control circuit 10. Also, the control circuit 1
The control signal Vc from 0 is input to the gate of the PMOS transistor Q1.

【0008】以下、本実施例の動作について説明する。
まず、制御回路10からの制御信号VcがHighレベ
ルであるときには、PMOSトランジスタQ1はオフ状
態となり、抵抗R1と抵抗R2には電流が流れない。し
たがって、NMOSトランジスタQ2のゲートgの電位
VgはLowレベルとなり、NMOSトランジスタQ2
はオフとなる。次に、制御信号VcがLowレベルであ
るときには、PMOSトランジスタQ1はオン状態とな
り、抵抗R1と抵抗R2の直列回路には電源線Eと接地
線Gの間の電圧が印加され、この電圧を抵抗R1と抵抗
R2で分圧した電圧がNMOSトランジスタQ2のゲー
トgに印加される。このとき、ゲートgに印加される電
圧がNMOSトランジスタQ2のスレショルド電圧Vt
hよりも若干大きくなるように、抵抗R1と抵抗R2の
分圧比を設定しておくと、制御信号VcがLowレベル
であるときには、NMOSトランジスタQ2はオンとな
る。
The operation of this embodiment will be described below.
First, when the control signal Vc from the control circuit 10 is at the high level, the PMOS transistor Q1 is turned off, and no current flows through the resistors R1 and R2. Therefore, the potential Vg of the gate g of the NMOS transistor Q2 becomes Low level, and the NMOS transistor Q2
Turns off. Next, when the control signal Vc is at the Low level, the PMOS transistor Q1 is turned on, and the voltage between the power supply line E and the ground line G is applied to the series circuit of the resistors R1 and R2. The voltage divided by R1 and the resistor R2 is applied to the gate g of the NMOS transistor Q2. At this time, the voltage applied to the gate g is the threshold voltage Vt of the NMOS transistor Q2.
If the voltage division ratio of the resistors R1 and R2 is set to be slightly larger than h, the NMOS transistor Q2 is turned on when the control signal Vc is at the Low level.

【0009】このような構成とすると、光電変換素子2
にリーク(漏れ電流)が無い状態では、制御信号Vcが
Highレベルのときには、NMOSトランジスタQ2
のドレインdの電位VdはHighレベルとなり、増幅
・演算回路20を動作させず、制御信号VcがLowレ
ベルのときには、NMOSトランジスタQ2のドレイン
dの電位VdがLowレベルとなり、増幅・演算回路2
0を動作させる。この増幅・演算回路20が動作するタ
イミングは、制御回路10により発光素子1が発光駆動
されるタイミングと一致させるものであり、このとき、
煙による散乱光がある場合には、増幅・演算回路20で
は、煙感知信号を発生することができる。
With such a configuration, the photoelectric conversion element 2
In the state where there is no leakage (leakage current) in the NMOS transistor Q2 when the control signal Vc is at the high level.
When the control signal Vc is at the Low level, the potential Vd of the drain d of the NMOS transistor Q2 becomes the Low level, and the potential Vd of the amplification / operation circuit 2 becomes low.
0 is operated. The timing at which the amplifier / arithmetic circuit 20 operates coincides with the timing at which the light emitting element 1 is driven to emit light by the control circuit 10. At this time,
When there is scattered light due to smoke, the amplification / arithmetic circuit 20 can generate a smoke detection signal.

【0010】ところが、光電変換素子2にリークが発生
すると、NMOSトランジスタQ2のソースsの電位V
sが上昇するため、制御信号VcがLowレベルのとき
に抵抗R1と抵抗R2の接続点に得られる電位Vgで
は、NMOSトランジスタQ2のゲート・ソース間電圧
(Vg−Vs)をスレショルド電圧Vthよりも大きく
することができず、NMOSトランジスタQ2はオン状
態となることができない。このとき、NMOSトランジ
スタQ2のドレインdの電位Vdは、制御信号Vcに関
係なく、常にHighレベルとなり、増幅・演算回路2
0を動作させない。このため、光電変換素子2のリーク
という異常電流による誤報の発生を防ぐことができる。
さらに、NMOSトランジスタQ2のドレインdの電位
Vdを制御回路10にフィードバックすることによっ
て、短時間で光電変換素子2の異常を検知することがで
きる。
However, when a leak occurs in the photoelectric conversion element 2, the potential V of the source s of the NMOS transistor Q2 becomes V.
Since s rises, at the potential Vg obtained at the connection point of the resistors R1 and R2 when the control signal Vc is at the Low level, the gate-source voltage (Vg-Vs) of the NMOS transistor Q2 becomes lower than the threshold voltage Vth. It cannot be increased and the NMOS transistor Q2 cannot be turned on. At this time, the potential Vd of the drain d of the NMOS transistor Q2 is always at the high level regardless of the control signal Vc, and the amplification / operation circuit 2
Do not operate 0. Therefore, it is possible to prevent the occurrence of an erroneous alarm due to an abnormal current called a leak of the photoelectric conversion element 2.
Further, by feeding back the potential Vd of the drain d of the NMOS transistor Q2 to the control circuit 10, the abnormality of the photoelectric conversion element 2 can be detected in a short time.

【0011】[0011]

【発明の効果】本発明によれば、煙の散乱光を光電変換
素子で検出することにより火災を感知する光電式煙感知
器において、前記光電変換素子の異常を検出する手段を
設けたものであるから、光電変換素子の異常に基づく誤
報の発生を防ぐことができるという効果がある。
According to the present invention, a photoelectric smoke detector for detecting a fire by detecting scattered light of smoke with a photoelectric conversion element is provided with means for detecting abnormality of the photoelectric conversion element. Therefore, there is an effect that it is possible to prevent the occurrence of a false alarm due to an abnormality of the photoelectric conversion element.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.

【図2】従来例のブロック図である。FIG. 2 is a block diagram of a conventional example.

【符号の説明】[Explanation of symbols]

2 光電変換素子 10 制御回路 20 増幅・演算回路 Q1 PMOSトランジスタ Q2 NMOSトランジスタ R 電流−電圧変換用の抵抗 R1 抵抗 R2 抵抗 R3 抵抗 R4 抵抗 2 Photoelectric conversion element 10 Control circuit 20 Amplification / arithmetic circuit Q1 PMOS transistor Q2 NMOS transistor R Current-voltage conversion resistance R1 resistance R2 resistance R3 resistance R4 resistance

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 煙の散乱光を光電変換素子で検出する
ことにより火災を感知する光電式煙感知器において、前
記光電変換素子の異常を検出する手段を設けたことを特
徴とする光電式煙感知器。
1. A photoelectric smoke detector for detecting a fire by detecting scattered light of smoke with a photoelectric conversion element, wherein photoelectric photoelectric smoke is provided with means for detecting abnormality of the photoelectric conversion element. sensor.
JP23062391A 1991-09-10 1991-09-10 Photoelectric smoke sensor Pending JPH0573786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23062391A JPH0573786A (en) 1991-09-10 1991-09-10 Photoelectric smoke sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23062391A JPH0573786A (en) 1991-09-10 1991-09-10 Photoelectric smoke sensor

Publications (1)

Publication Number Publication Date
JPH0573786A true JPH0573786A (en) 1993-03-26

Family

ID=16910680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23062391A Pending JPH0573786A (en) 1991-09-10 1991-09-10 Photoelectric smoke sensor

Country Status (1)

Country Link
JP (1) JPH0573786A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862116B1 (en) * 2006-11-03 2008-10-09 우영석 fire detector circuit
CN103473880A (en) * 2013-09-23 2013-12-25 何林 High-sensitivity smoke alarm

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727391A (en) * 1980-07-25 1982-02-13 Nohmi Bosai Kogyo Co Ltd Ionization fire sensor
JPS6332688A (en) * 1986-07-25 1988-02-12 松下電工株式会社 Photoelectric type analog smoke sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727391A (en) * 1980-07-25 1982-02-13 Nohmi Bosai Kogyo Co Ltd Ionization fire sensor
JPS6332688A (en) * 1986-07-25 1988-02-12 松下電工株式会社 Photoelectric type analog smoke sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862116B1 (en) * 2006-11-03 2008-10-09 우영석 fire detector circuit
CN103473880A (en) * 2013-09-23 2013-12-25 何林 High-sensitivity smoke alarm

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