JPH0570103A - Production of inorganic dielectric thin film - Google Patents
Production of inorganic dielectric thin filmInfo
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- JPH0570103A JPH0570103A JP24529291A JP24529291A JPH0570103A JP H0570103 A JPH0570103 A JP H0570103A JP 24529291 A JP24529291 A JP 24529291A JP 24529291 A JP24529291 A JP 24529291A JP H0570103 A JPH0570103 A JP H0570103A
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- thin film
- dielectric thin
- inorganic dielectric
- film
- producing
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- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はＰｂ含有ペロブスカイ
ト等の無機誘電体薄膜の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an inorganic dielectric thin film such as Pb-containing perovskite.
【０００２】[0002]
【従来の技術】センサヘッド部分、磁気記録媒体等に使
用されているＰｂ含有ペロブスカイト等の無機誘電体薄
膜は、従来は、マグネトロンスパッタリング法、高周波
スパッタリング法、あるいはＣＶＤ（化学気相蒸着法）
等によって成膜されている。2. Description of the Related Art Inorganic dielectric thin films such as Pb-containing perovskites used in sensor heads, magnetic recording media, etc. have hitherto been magnetron sputtering, high frequency sputtering, or CVD (chemical vapor deposition).
And the like.
【０００３】[0003]
【発明が解決しようとする課題】ところで上記従来の成
膜方法では、装置あるいは原理上の制約から、０．０１
Ｔｏｒｒ以下という低い酸素圧下で成膜が行われている
のが実情であるが、低酸素圧であることに起因して、次
のような不具合が生じている。However, in the above-mentioned conventional film forming method, 0.01
Actually, the film formation is performed under a low oxygen pressure of Torr or less, but the following problems occur due to the low oxygen pressure.
【０００４】それは従来の成膜方法では、ターゲット元
素間での平衡蒸気圧の差により組成ずれが生じて充分結
晶化した薄膜が得られず、そのためターゲット組成の補
正を行う必要があるということである。This is because the conventional film forming method cannot obtain a sufficiently crystallized thin film due to a composition shift due to a difference in equilibrium vapor pressure between target elements, and therefore it is necessary to correct the target composition. is there.
【０００５】また従来の成膜方法によって作成された無
機誘電体薄膜は、上記ターゲット組成の補正を行っても
ランダム配向し易い傾向にあり、そのためアズ・デポ状
態でＣ軸配向した結晶化膜を得ようとすれば、基板温度
を６００℃以上の高温にする必要があり、Ｓｉ−ＣＣ
Ｄ、ＭＯＳ−ＦＥＴ等のデバイスへの直接成膜が不可能
であった。Further, the inorganic dielectric thin film formed by the conventional film forming method tends to be randomly oriented even if the above target composition is corrected. Therefore, a crystallized film oriented in the C-axis in the as-depo state is formed. In order to obtain it, it is necessary to raise the substrate temperature to a high temperature of 600 ° C. or higher.
Direct film formation on devices such as D and MOS-FET was impossible.
【０００６】そこでこの発明の第１の目的は、従来のよ
うにターゲット組成の補正を行う必要のない無機誘電体
薄膜の製造方法を提供することにある。Therefore, a first object of the present invention is to provide a method for producing an inorganic dielectric thin film which does not require correction of the target composition as in the conventional case.
【０００７】またこの発明の第２の目的は、低温でもっ
てＣ軸配向度が高く、結晶性の良い無機誘電体薄膜を形
成することが可能な無機誘電体薄膜の製造方法を提供す
ることにある。A second object of the present invention is to provide a method for producing an inorganic dielectric thin film, which can form an inorganic dielectric thin film having a high degree of C-axis orientation and good crystallinity even at a low temperature. is there.
【０００８】[0008]
【課題を解決するための手段及び作用】そこで本発明者
等は、ターゲットの組成ずれについての検討を種々行
い、その結果、請求項１のように、０．０６Ｔｏｒｒ以
上の酸素雰囲気下、好ましくは０．１Ｔｏｒｒ以上の酸
素雰囲気下で蒸着を行えば、組成ずれ（特に低融点元素
のずれ）を防止し得ることを知見した。Therefore, the inventors of the present invention have conducted various studies on the compositional deviation of the target, and as a result, as described in claim 1, in an oxygen atmosphere of 0.06 Torr or more, preferably. It has been found that composition deviation (especially, deviation of low melting point element) can be prevented by performing vapor deposition in an oxygen atmosphere of 0.1 Torr or more.
【０００９】また請求項２のように、蒸着法として、レ
ーザビームを利用した蒸着法を採用すれば、堆積する原
子に高いエネルギを与えることが可能となり、この結
果、基板温度を従来よりも低温にしながらも、充分なＣ
軸配向をした結晶化膜が得られることになる。When the vapor deposition method using a laser beam is adopted as the vapor deposition method as described in claim 2, it becomes possible to give high energy to the atoms to be deposited, and as a result, the substrate temperature is lower than that of the conventional one. It's enough C
A crystallized film having an axial orientation will be obtained.
【００１０】さらに請求項３のように成膜物質と基板物
質との格子定数を近接させれば一段と低い基板温度にお
いても、結晶化の良好なＣ軸配向した無機誘電体薄膜を
形成することが可能となる。Further, if the film formation substance and the substrate substance are made close to each other in lattice constant as in the third aspect, a C-axis oriented inorganic dielectric thin film having good crystallization can be formed even at a further lower substrate temperature. It will be possible.
【００１１】また格子定数の合致した基板を使用し得な
いような場合には、請求項４のように、ミスマッチを緩
和するための中間層を形成すれば、上記請求項３と同様
に成膜温度の低温化が図れる。When it is impossible to use a substrate having a matched lattice constant, an intermediate layer for relaxing the mismatch is formed as in claim 4, and the film is formed in the same manner as in claim 3. The temperature can be lowered.
【００１２】なお本発明の請求項１の蒸着法は、レーザ
スパッタリング法等に限定されず、請求項５のように変
更し得るものである。The vapor deposition method according to the first aspect of the present invention is not limited to the laser sputtering method or the like and can be modified as the fifth aspect.
【００１３】[0013]
【実施例】次にこの発明の無機誘電体蒲膜の製造方法の
具体的な実施例について、図面を参照しつつ詳細に説明
する。EXAMPLES Next, specific examples of the method for producing an inorganic dielectric film according to the present invention will be described in detail with reference to the drawings.
【００１４】図１に実施装置の一例の概略構成を示す。
同図において、１は成膜容器（真空チャンバ）、２はレ
ーザ発振器、３はターゲット、４は基板、５は酸素ガス
導入路をそれぞれ示している。この場合、レーザ発振器
２からは、紫外光であるＡｒＦエキシマレーザ（１９３
ｎｍ）が発振されるようなされており、このレーザビー
ム６は、レンズ７及び成膜容器１に設けたレーザ導入口
８をそれぞれ通過してターゲット３に照射される。そし
てターゲット３から生成する励起種等が、上記ターゲッ
ト３と相対向して配置された基板４に蒸着し、これによ
り成膜が行われる。この成膜装置は、エネルギ源（レー
ザ）２と成膜容器（真空チャンバ）１とが分離している
ところに特徴があり、このため広範囲のガス圧力（１０
−１０Ｔｏｒｒ〜常圧）下での成膜が可能となる。FIG. 1 shows a schematic structure of an example of the embodying apparatus.
In the figure, 1 is a film forming container (vacuum chamber), 2 is a laser oscillator, 3 is a target, 4 is a substrate, and 5 is an oxygen gas introduction path. In this case, from the laser oscillator 2, an ArF excimer laser (193
The laser beam 6 passes through the lens 7 and the laser introduction port 8 provided in the film forming container 1 and is applied to the target 3. Then, the excited species and the like generated from the target 3 are vapor-deposited on the substrate 4 arranged so as to face the target 3 to form a film. This film forming apparatus is characterized in that the energy source (laser) 2 and the film forming container (vacuum chamber) 1 are separated from each other. Therefore, a wide range of gas pressure (10
It becomes possible to form a film under −10 Torr to normal pressure.
【００１５】実施例１ レーザ強度 ：１〜３Ｊ／ｃｍ２ 繰返し周波数 ：５〜３０Ｈｚ 基板温度（Ｔｓ）：５５０℃ ターゲット ：ＰｂＴｉＯ３ Example 1 Laser intensity: 1-3 J / cm 2 Repetition frequency: 5-30 Hz Substrate temperature (Ts): 550 ° C. Target: PbTiO 3
【００１６】上記成膜条件において、酸素分圧を変化
（０．１Ｔｏｒｒ、０．０１Ｔｏｒｒ、０．００１Ｔｏ
ｒｒ）させて作製した薄膜において、簿膜中のＰｂ量を
測定した。その結果を図２に示すが、同図からターゲッ
トの組成ずれ（特に融点の低い元素のずれ）を防止する
ためには、０．０６Ｔｏｒｒ以上、好ましくは０．１Ｔ
ｏｒｒ以上の酸素分圧下で成膜する必要のあることが明
らかである。Under the above film forming conditions, the oxygen partial pressure was changed (0.1 Torr, 0.01 Torr, 0.001 Tor).
The amount of Pb in the book film was measured for the thin film produced by rr). The results are shown in FIG. 2. From the figure, in order to prevent compositional deviation of the target (especially deviation of elements having a low melting point), 0.06 Torr or more, preferably 0.1 T
It is clear that it is necessary to form a film under an oxygen partial pressure of or or higher.
【００１７】また上記において作製したＰｂＴｉＯ３薄
膜のＸ線回折パターンを図３（ａ）（ｂ）に示す。同図
（ａ）は酸素分圧０．１Ｔｏｒｒの場合のもの、また同
図的は酸素分圧０．００１Ｔｏｒｒの場合のものである
が、同図（ｂ）においては、Ｃ軸配向を示す指数（００
１）（００２）のＸ線強度がいずれも低く、同図（ｂ）
のように低い酸素分圧下で成膜した場合には、組成ずれ
のために充分結晶化した薄膜を形成し得ないことが明ら
かとなった。The X-ray diffraction patterns of the PbTiO 3 thin film produced above are shown in FIGS. 3 (a) and 3 (b). The figure (a) shows the case where the oxygen partial pressure is 0.1 Torr, and the figure shows the case where the oxygen partial pressure is 0.001 Torr. However, in the figure (b), the index indicating the C-axis orientation is shown. (00
1) The X-ray intensities of (002) are all low, and FIG.
It was revealed that when a film was formed under such a low oxygen partial pressure as described above, a sufficiently crystallized thin film could not be formed due to compositional deviation.
【００１８】実施例２ 従来の成膜方法（マグネトロンスパッタリング法）によ
り作製した無機誘電体薄膜（ＰｂＴｉＯ３）のＸ線回折
パターンと、レーザスパッタリング法により作製した簿
膜のＸ線回折パターンを図４（ａ）（ｂ）的に示す。レ
ーザスパッタリング法により作製した薄膜は、同図
（ｂ）のように強くＣ軸配向しており高い電気的特性が
期待される。しかし従来の成膜法で作製した無機誘電体
薄膜は、同図（ａ）のようにランダム配向であり、この
ままでは高い電気特性は期待できない。このようにレー
ザスパッタリング法では１光子当たりのエネルギが大き
いために、堆積する原子に高いエネルギを与えることが
可能となり、充分なＣ軸配向をした結晶化膜が得られ
る。なおこの図４（ｂ）でのレーザスパッタリング法で
の成膜条件は、基板温度が６００℃、酸素分圧が１０
−１Ｔｏｒｒであり、それ以外は実施例１と同様であ
る。 Example 2 An X-ray diffraction pattern of an inorganic dielectric thin film (PbTiO 3 ) prepared by a conventional film forming method (magnetron sputtering method) and an X-ray diffraction pattern of a book film formed by a laser sputtering method are shown in FIG. (A) and (b) are shown. The thin film produced by the laser sputtering method is strongly C-axis oriented as shown in FIG. 4B, and high electrical characteristics are expected. However, the inorganic dielectric thin film produced by the conventional film forming method has a random orientation as shown in FIG. 4A, and high electrical characteristics cannot be expected as it is. As described above, since the energy per photon is large in the laser sputtering method, high energy can be given to the deposited atoms, and a crystallized film having a sufficient C-axis orientation can be obtained. The film forming conditions by the laser sputtering method in FIG. 4B are as follows: substrate temperature 600 ° C., oxygen partial pressure 10
−1 Torr, and otherwise the same as Example 1.
【００１９】一方従来法では、５５０℃以下の基板温度
ではアズ・デポ状態で結晶化した膜が得られないOn the other hand, in the conventional method, a crystallized film in an as-deposited state cannot be obtained at a substrate temperature of 550 ° C. or lower.
【００２０】実施例３ 成膜する物質の格子定数に近い基板を選択する例とし
て、例えばＰｂＴｉＯ３（格子定数：３．９０Å）を成
膜する際に基板として、ＭｇＯ（４．２０Å）とＳｒＴ
ｉＯ３（３．９１Å）を使用した（図５（ａ）（ｂ）参
照）。格子定数のマッチングの良いＳｒＴｉＯ３基板上
においては、ＭｇＯ基板上より約１００℃も低い基板温
度（３８０℃）まで結晶化の良好なＣ軸配向したＰｂＴ
ｉＯ３薄膜を作製することが可能であった（図５
（ｂ））。なお成膜条件は以下の通りである。 Example 3 As an example of selecting a substrate having a lattice constant close to that of the substance to be formed, for example, when forming PbTiO 3 (lattice constant: 3.90Å), MgO (4.20Å) and SrT are used as the substrate.
iO 3 (3.91Å) was used (see FIGS. 5 (a) and 5 (b)). On SrTiO 3 substrate with good lattice constant matching, C-axis oriented PbT with good crystallization up to a substrate temperature (380 ° C.) lower by about 100 ° C. than on MgO substrate.
It was possible to prepare an iO 3 thin film (FIG. 5).
(B)). The film forming conditions are as follows.
【００２１】レーザ強度 ：１〜３Ｊ／ｃｍ２ 繰返し周波数 ：５〜３０Ｈｚ 基板温度（Ｔｓ）：３８０、４５０℃ 酸素分圧 ：１０−１Ｔｏｒｒ ターゲット ：ＰｂＴｉＯ３ Laser intensity: 1-3 J / cm 2 Repetition frequency: 5-30 Hz Substrate temperature (Ts): 380, 450 ° C. Oxygen partial pressure: 10 -1 Torr Target: PbTiO 3
【００２２】なお上記各実施例においては、成膜物質と
してＰｂＴｉＯ３を用いているが、これ以外のもの、例
えばＰｂ（Ｚｒ，Ｔｉ）Ｏ３、（Ｐｂ，Ｌａ）（Ｚｒ，
Ｔｉ）Ｏ３、（Ｐｂ，Ｌａ）ＴｉＯ３、ＬｉＴａＯ３、
ＢａＴｉＯ３、ＬｉＮｂＯ３等を使用することが可能で
ある。In each of the above embodiments, PbTiO 3 is used as the film forming material, but other materials such as Pb (Zr, Ti) O 3 and (Pb, La) (Zr,
Ti) O 3 , (Pb, La) TiO 3 , LiTaO 3 ,
It is possible to use BaTiO 3 , LiNbO 3 or the like.
【００２３】また上記成膜物質の格子定数に近い基板の
他の例としては、Ｐｔ、Ｐｄ、Ａｇ、Ｉｎ、ＳｎＯ２、
ＰｂＯ、Ｖ２Ｏ３、Ｆｅ２Ｏ３、Ｎｂ２Ｏ５、Ｒｕ
Ｏ２、ＲｅＯ３、ＩｒＯ３、ＴｉＯ２、Ｂｉ２Ｏ３＋Ｗ
ドープ、ＳｒＴｉＯ３＋Ｎｂドープ等で形成した基板を
挙げることができる。Further, as another example of the substrate having a lattice constant close to that of the above film forming material, Pt, Pd, Ag, In, SnO 2 ,
PbO, V 2 O 3 , Fe 2 O 3 , Nb 2 O 5 , Ru
O 2 , ReO 3 , IrO 3 , TiO 2 , Bi 2 O 3 + W
A substrate formed by doping, SrTiO 3 + Nb doping, or the like can be given.
【００２４】また蒸着用レーザはＡｒＦエキシマレーザ
に限らず、Ｋ２Ｆ（２４９ｎｍ）、ＸｅＣｌ（３０８ｎ
ｍ）、ＸｅＦ（３５１ｎｍ）等やＹＡＧ−ＴＨＧ（３５
５ｎｍ）等の紫外光レーザが有効であると考えられる。Further, the vapor deposition laser is not limited to the ArF excimer laser, but K 2 F (249 nm), XeCl (308 n).
m), XeF (351 nm), etc. and YAG-THG (35
It is considered that an ultraviolet laser such as 5 nm) is effective.
【００２５】[0025]
【発明の効果】以上のように請求項１の無機誘電体薄膜
の製造方法によれば、成膜された無機誘電体薄膜の組成
ずれを防止し得るので、従来のターゲット組成の補正と
いう操作が不要になるという利点がある。As described above, according to the method for manufacturing an inorganic dielectric thin film of the first aspect, composition deviation of the formed inorganic dielectric thin film can be prevented, so that the conventional operation of correcting the target composition can be performed. There is an advantage that it becomes unnecessary.
【００２６】また請求項２の無機誘電体薄膜の製造方法
によれば、基板温度を従来よりも低温にしながらも、充
分なＣ軸配向をした結晶化膜が得られることになる。According to the method for producing an inorganic dielectric thin film of claim 2, a crystallized film having a sufficient C-axis orientation can be obtained while the substrate temperature is lower than that of the conventional one.
【００２７】さらに請求項３及び請求項４の無機誘電体
薄膜の製造方法によれば、Ｃ軸配向した結晶化膜が得ら
れる基板温度を一段と低下し得ることになる。Further, according to the method for producing an inorganic dielectric thin film of claims 3 and 4, the substrate temperature at which a C-axis oriented crystallized film is obtained can be further lowered.
【図１】この発明の無機誘電体薄膜の製造方法を実施に
使用する成膜装置の一例の説明図である。FIG. 1 is an explanatory view of an example of a film forming apparatus used for carrying out the method for producing an inorganic dielectric thin film of the present invention.
【図２】酸素分圧と形成膜中のＰｂ量との関係を示すグ
ラフである。FIG. 2 is a graph showing the relationship between oxygen partial pressure and the amount of Pb in the formed film.
【図３】異なる酸素分圧下で成膜されたＰｂＴｉＯ３薄
膜のＸ線回折パターンを比較して示すグラフで、（ａ）
は酸素分圧が０．１Ｔｏｒｒ、（ｂ）は酸素分圧が０．
００１Ｔｏｒｒの場合である。FIG. 3 is a graph showing a comparison of X-ray diffraction patterns of PbTiO 3 thin films formed under different oxygen partial pressures, (a).
Has an oxygen partial pressure of 0.1 Torr, and (b) has an oxygen partial pressure of 0.
This is the case of 001 Torr.
【図４】従来法によって形成されたＰｂＴｉＯ３薄膜と
実施例方法によって成膜されたＰｂＴｉＯ３薄膜のＸ線
回折パターンを比較して示すグラフで、（ａ）は従来
法、（ｂ）は実施例方法によるものである。[4] by PbTiO 3 thin film as in Example methods formed by conventional methods in the graph comparing the X-ray diffraction pattern of the PbTiO 3 thin film formed, (a) shows the conventional method, (b) is carried out This is due to the example method.
【図５】基板材質の異なる条件下で成膜されたＰｂＴｉ
Ｏ３薄膜のＸ線回折パターンを比較して示すグラフで、
（ａ）はＭｇＯ基板、（ｂ）はＳｒＴｉＯ３基板を用い
た場合を示している。FIG. 5: PbTi formed under different substrate materials
In graph comparing the X-ray diffraction pattern of the O 3 film,
(A) shows the case where a MgO substrate is used, and (b) shows the case where a SrTiO 3 substrate is used.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ２３Ｃ 14/54 8520−4Ｋ 16/40 7325−4Ｋ (72)発明者 藤岡 順三 兵庫県明石市川崎町１番１号 川崎重工業 株式会社明石工場内 (72)発明者 南方 俊一 兵庫県明石市川崎町１番１号 川崎重工業 株式会社明石工場内 (72)発明者 川合 知二 大阪府箕面市小野原2494−615 (72)発明者 河合 七雄 大阪府吹田市千里山西五丁目47−20─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location C23C 14/54 8520-4K 16/40 7325-4K (72) Inventor Junzo Fujioka Akashi City, Hyogo Prefecture Kawasaki-machi 1-1 Kawasaki Heavy Industries Ltd. Akashi Factory (72) Inventor Shunichi Minamikata 1-1 Kawasaki-cho Akashi-shi, Hyogo Prefecture Kawasaki Heavy Industries Ltd. Akashi Factory (72) Inventor Tomoji Kawai Onohara, Minoh City, Osaka Prefecture 2494-615 (72) Inventor Nanao Kawai 47-20 Senriyama Nishi 5-chome Suita City Osaka Prefecture
Claims (5)
より成る無機誘電体薄膜を基板上に形成するための無機
誘電体薄膜の製造方法において、生成した励起種等を利
用した蒸着法により、０．０６Ｔｏｒｒ以上の酸素雰囲
気下で成膜を行うことを特徴とする無機誘電体薄膜の製
造方法。1. A method for producing an inorganic dielectric thin film for forming an inorganic dielectric thin film composed of a complex oxide of a high melting point metal and a low melting point metal on a substrate, a vapor deposition method utilizing the generated excited species or the like. The method for producing an inorganic dielectric thin film is characterized in that the film is formed in an oxygen atmosphere of 0.06 Torr or more.
蒸着法であることを特徴とする請求項１の無機誘電体薄
膜の製造方法。2. The method for producing an inorganic dielectric thin film according to claim 1, wherein the vapor deposition method is a vapor deposition method using a laser beam.
相異を３％以内にすることを特徴とする請求項１又は請
求項２の無機誘電体薄膜の製造方法。3. The method for producing an inorganic dielectric thin film according to claim 1, wherein the difference in lattice constant between the film forming material and the substrate material is within 3%.
子定数が両物質の格子定数の間にあり、かつ立方晶構造
を有する導電性又は誘電性の中間層を介設することを特
徴とする請求項１又は請求項２の無機誘電体薄膜の製造
方法。4. An electrically conductive or dielectric intermediate layer having a cubic crystal structure and having a lattice constant between the lattice constants of both substances is interposed between the substrate and the inorganic dielectric thin film. 3. The method for producing an inorganic dielectric thin film according to claim 1 or 2.
法、高周波スパッタリング法、化学気相蒸着法、分子線
エピタキシー法、電子ビーム法のいずれかであることを
特徴とする請求項１、請求項３又は請求項４の無機誘電
体薄膜の製造方法。5. The vapor deposition method is any one of a magnetron sputtering method, a high frequency sputtering method, a chemical vapor deposition method, a molecular beam epitaxy method, and an electron beam method. Item 4. A method for producing an inorganic dielectric thin film according to item 4.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24529291A JPH0570103A (en) | 1990-08-24 | 1991-06-18 | Production of inorganic dielectric thin film |
| GB9118246A GB2250751B (en) | 1990-08-24 | 1991-08-23 | Process for the production of dielectric thin films |
| US08/051,817 US5395663A (en) | 1990-08-24 | 1993-04-26 | Process for producing a perovskite film by irradiating a target of the perovskite with a laser beam and simultaneously irradiating the substrate upon which the perovskite is deposited with a laser beam |
| GB9407946A GB2276393B (en) | 1990-08-24 | 1994-04-21 | Pyroelectric type of sensor |
| US08/353,293 US5532504A (en) | 1990-08-24 | 1994-12-05 | Process for the production of dielectric thin films |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2-222884 | 1990-08-24 | ||
| JP22288490 | 1990-08-24 | ||
| JP24529291A JPH0570103A (en) | 1990-08-24 | 1991-06-18 | Production of inorganic dielectric thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0570103A true JPH0570103A (en) | 1993-03-23 |
Family
ID=26525143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24529291A Pending JPH0570103A (en) | 1990-08-24 | 1991-06-18 | Production of inorganic dielectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0570103A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571495A (en) * | 1994-08-11 | 1996-11-05 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Dielectric thin film of substituted lead titanate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01252506A (en) * | 1988-02-18 | 1989-10-09 | Kernforschungsanlage Juelich Gmbh | Production of thin layer of oxide high temperature superconductor |
| JPH0217685A (en) * | 1988-05-11 | 1990-01-22 | Siemens Ag | Manufacture of metal oxide superconducting material layer using laser vaporization |
-
1991
- 1991-06-18 JP JP24529291A patent/JPH0570103A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01252506A (en) * | 1988-02-18 | 1989-10-09 | Kernforschungsanlage Juelich Gmbh | Production of thin layer of oxide high temperature superconductor |
| JPH0217685A (en) * | 1988-05-11 | 1990-01-22 | Siemens Ag | Manufacture of metal oxide superconducting material layer using laser vaporization |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571495A (en) * | 1994-08-11 | 1996-11-05 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Dielectric thin film of substituted lead titanate |
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