JPH0563334A - Manufacture of ceramic wiring board - Google Patents

Manufacture of ceramic wiring board

Info

Publication number
JPH0563334A
JPH0563334A JP21909191A JP21909191A JPH0563334A JP H0563334 A JPH0563334 A JP H0563334A JP 21909191 A JP21909191 A JP 21909191A JP 21909191 A JP21909191 A JP 21909191A JP H0563334 A JPH0563334 A JP H0563334A
Authority
JP
Japan
Prior art keywords
copper layer
forming
copper
substrate
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21909191A
Other languages
Japanese (ja)
Inventor
Masaya Koyama
雅也 小山
Yoshiharu Kasai
与志治 笠井
Kazunobu Morioka
一信 盛岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP21909191A priority Critical patent/JPH0563334A/en
Publication of JPH0563334A publication Critical patent/JPH0563334A/en
Pending legal-status Critical Current

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  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To obtain a manufacturing method wherein a copper layer can be formed on the surface of a ceramic board in a short time, and the obtained copper layer on the ceramic board surface is excellent in high temperature thermal resistance. CONSTITUTION:In the manufacturing method of a ceramic wiring board wherein a copper layer is formed on the surface of a ceramic board, the forming process of the copper layer consists of the following; a process for forming a first copper layer on the ceramic board surface by electroless plating, and a process for forming a second copper layer on the first copper layer by electroplating using plating solution composed of only sulfuric acid and copper sulfate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子材料として使用さ
れるセラミック配線板の製法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a ceramic wiring board used as an electronic material.

【0002】[0002]

【従来の技術】基板上に抵抗体を焼成して形成する配線
板では、この抵抗体の焼成が600℃以上の温度で行わ
れるため高温耐熱性を有する配線板であることが要求さ
れる。このような用途においては、高温耐熱性の優れた
セラミック基板の表面に銅層を形成して製造されるセラ
ミック配線板が使用されている。この従来のセラミック
配線板の製造方法においては、銅層の形成は電解メッキ
では高温耐熱性が不足するため高温耐熱性の優れた無電
解メッキによって行われている。しかし、無電解メッキ
によって厚い銅層を形成するには非常に長時間かけて無
電解メッキをしなければならず、もっと短時間で高温耐
熱性の優れた銅層を形成する方法が求められているのが
現状である。
2. Description of the Related Art A wiring board formed by firing a resistor on a substrate is required to have a high temperature heat resistance because the resistor is fired at a temperature of 600 ° C. or higher. In such applications, a ceramic wiring board manufactured by forming a copper layer on the surface of a ceramic substrate having excellent high temperature heat resistance is used. In this conventional method for manufacturing a ceramic wiring board, the copper layer is formed by electroless plating, which is excellent in high temperature heat resistance because electrolytic plating lacks high temperature heat resistance. However, in order to form a thick copper layer by electroless plating, it is necessary to perform electroless plating for a very long time, and there is a need for a method of forming a copper layer with excellent high temperature heat resistance in a shorter time. It is the current situation.

【0003】[0003]

【発明が解決しようとする課題】上記事情に鑑み、本発
明の解決しようとする課題は短時間で高温耐熱性の優れ
た銅層をセラミック基板の表面に形成できる方法を見出
すことである。
In view of the above circumstances, the problem to be solved by the present invention is to find a method capable of forming a copper layer having excellent high temperature heat resistance on the surface of a ceramic substrate in a short time.

【0004】[0004]

【課題を解決するための手段】本発明はセラミック基板
の表面に銅層を形成してセラミック配線板を製造する方
法において、該銅層の形成工程がセラミック基板の表面
に無電解メッキにより第1の銅層を形成する工程と、こ
の第1の銅層の上に硫酸及び硫酸銅のみよりなるメッキ
液を用いて電解メッキにより第2の銅層を形成する工程
よりなることを特徴とするセラミック配線板の製法であ
る。
According to the present invention, in a method for manufacturing a ceramic wiring board by forming a copper layer on the surface of a ceramic substrate, the step of forming the copper layer is performed by electroless plating on the surface of the ceramic substrate. And a step of forming a second copper layer on the first copper layer by electrolytic plating using a plating solution containing only sulfuric acid and copper sulfate. It is a method of manufacturing a wiring board.

【0005】本発明を適用するセラミック基板としては
例えばアルミナ基板、窒化珪素基板などがある。
Examples of ceramic substrates to which the present invention is applied include alumina substrates and silicon nitride substrates.

【0006】本発明における、セラミック基板の表面に
無電解メッキにより第1の銅層を形成する工程では従来
おこなわれている無電解銅メッキ法をそのまま使用する
ことができ特に限定はない。例えば触媒を付与したセラ
ミック基板を硫酸銅、エチレンジアミン四錯酸塩、ホル
マリン、ポリエチレングリコール及び苛性ソーダ等を含
有する無電解メッキ液に適当な時間浸漬した後、取り出
して乾燥することにより第1の銅層は形成される。無電
解メッキによるこの第1の銅層の形成は次の工程の電解
メッキによるセラミック基板上への銅層の形成のために
必要な導電性物質の付与が目的であるので、セラミック
基板の表面が完全に覆われればよく、それ以上に厚く形
成する必要はない。従って、この第1の銅層の厚みは厚
くとも3μまでで十分である。そして、この無電解メッ
キによるこの第1の銅層はポーラスな構造をしており、
このため高温に曝したときセラミック基板に含まれる揮
発性の成分がこの第1の銅層を貫通して逃げることがで
き、高温に曝しても第1の銅層に剥がれやふくれなどが
発生しにくい利点も有している。
In the step of forming the first copper layer on the surface of the ceramic substrate by electroless plating in the present invention, the electroless copper plating method conventionally used can be used as it is without any particular limitation. For example, the first copper layer is obtained by immersing a ceramic substrate to which a catalyst is applied in an electroless plating solution containing copper sulfate, ethylenediamine tetracomplex, formalin, polyethylene glycol, caustic soda, etc. for an appropriate time, and then taking it out and drying it. Is formed. Since the formation of this first copper layer by electroless plating is intended to provide a conductive material necessary for forming a copper layer on the ceramic substrate by electrolytic plating in the next step, the surface of the ceramic substrate is It only needs to be completely covered, and it does not need to be formed thicker. Therefore, it is sufficient that the thickness of this first copper layer is at most 3 μm. And, this first copper layer by this electroless plating has a porous structure,
Therefore, when exposed to high temperatures, the volatile components contained in the ceramic substrate can escape through this first copper layer, and even if exposed to high temperatures, peeling or blistering occurs in the first copper layer. It also has difficult advantages.

【0007】本発明では上記のようにして得られた第1
の銅層の上に、硫酸及び硫酸銅のみよりなるメッキ液を
用いて電解メッキにより第2の銅層を形成する工程を有
する。このメッキ液の組成が本発明の特徴であり、一般
に行われている電解メッキではメッキ液中にメッキ皮膜
の緻密性を高めるための光沢剤とよばれるオキシエチレ
ン系界面活性剤、硫黄化合物及びサフラニン系染料の混
合物が添加されているのが通常であるが、本発明では得
られる銅層がポーラスな構造をしていることが高温耐熱
性の向上に有効であることを確認したので、これらの光
沢剤を添加せずに硫酸及び硫酸銅のみよりなるメッキ液
を用いて電解メッキをするようにしたものである。そし
て、電解メッキは無電解メッキに比べると短時間で厚い
銅層を形成できる利点があるので、必要な厚さだけの無
電解メッキによる第1の銅層の上に電解メッキにより第
2の銅層を形成することは、同一厚みの銅層を全て無電
解メッキによって形成した場合に比べ短時間で銅層の形
成を完了できる。
In the present invention, the first obtained as described above
On the copper layer, a step of forming a second copper layer by electrolytic plating using a plating solution containing only sulfuric acid and copper sulfate. The composition of this plating solution is a feature of the present invention, and in electroplating generally performed, an oxyethylene-based surfactant called a brightening agent, a sulfur compound and safranine for increasing the denseness of the plating film in the plating solution. It is normal to add a mixture of dyes, but in the present invention, it was confirmed that it is effective for improving the high temperature heat resistance that the obtained copper layer has a porous structure. Electrolytic plating is carried out by using a plating solution containing only sulfuric acid and copper sulfate without adding a brightening agent. Since electrolytic plating has an advantage that a thicker copper layer can be formed in a shorter time than electroless plating, a second copper layer is formed by electrolytic plating on the first copper layer formed by electroless plating having a required thickness. The formation of the layer can complete the formation of the copper layer in a shorter time than the case where all the copper layers having the same thickness are formed by electroless plating.

【0008】なお、本発明で第2の銅層の形成の際に、
第1の銅層の上に導体パターンの逆パターンのレジスト
を付与し、レジストがない部分のみに電解メッキにより
第2の銅層を形成する、いわゆるパターンメッキ法を行
うことも可能である。
In the present invention, when the second copper layer is formed,
It is also possible to perform a so-called pattern plating method in which a resist having a reverse pattern of the conductor pattern is applied on the first copper layer and the second copper layer is formed by electrolytic plating only on the portion where there is no resist.

【0009】[0009]

【作用】光沢剤を添加せずに硫酸及び硫酸銅のみよりな
るメッキ液を用いて電解メッキをして第2の銅層を形成
することは、短時間で高温耐熱性に優れるポーラスな構
造の銅層を形成する働きをする。
The function of forming a second copper layer by electrolytic plating using a plating solution consisting of sulfuric acid and copper sulfate alone without adding a brightening agent is a porous structure excellent in high temperature heat resistance in a short time. It functions to form a copper layer.

【0010】[0010]

【実施例】(実施例)スルホールが施され、焼結された
厚み1mmのアルミナ基板を300℃に加熱した燐酸中
に5分間浸漬して、基板表面を粗化した後、十分に水洗
し乾燥した。この乾燥した基板を無電解銅メッキ液中に
浸漬し、厚み1μmの第1の銅層を前記基板の表面に形
成した。次にこの第1の銅層が形成された基板を下記の
電解メッキ条件で電解メッキし第1の銅層の上に第2の
銅層を形成した。この場合の、第1の銅層の形成と第2
の銅層の形成に要した合計時間は90分であり、第1の
銅層と第2の銅層の厚みの合計は35μmであった。
EXAMPLES (Example) An alumina substrate having a thickness of 1 mm, which had been subjected to through-holes and was sintered, was immersed in phosphoric acid heated to 300 ° C. for 5 minutes to roughen the substrate surface, followed by thorough washing with water and drying. did. The dried substrate was immersed in an electroless copper plating solution to form a first copper layer having a thickness of 1 μm on the surface of the substrate. Next, the substrate on which the first copper layer was formed was electroplated under the following electrolytic plating conditions to form a second copper layer on the first copper layer. In this case, the formation of the first copper layer and the second
The total time required to form the copper layer was 90 minutes, and the total thickness of the first copper layer and the second copper layer was 35 μm.

【0011】 電解メッキ条件 メッキ液の組成: 硫酸銅 75g/l 硫酸 180g/l 電流密度 : 2A/dm2 通電時間 : 75分 このようにして得られたセラミック基板の表面に銅層が
形成された基板の高温耐熱性を調べたところ700℃の
窒素雰囲気中で10分間加熱処理しても銅層に剥がれや
ふくれの発生はなかった。
Electrolytic plating conditions Composition of plating solution: Copper sulfate 75 g / l Sulfuric acid 180 g / l Current density: 2 A / dm 2 Energization time: 75 minutes A copper layer was formed on the surface of the ceramic substrate thus obtained. When the high temperature heat resistance of the substrate was examined, no peeling or blistering occurred in the copper layer even after heat treatment in a nitrogen atmosphere at 700 ° C. for 10 minutes.

【0012】そして、上記の銅層が形成された基板を用
いて、ドライフィルムを用いる方法で導体パターンを形
成し、セラミック配線板を製造することができた。
Then, a conductor pattern was formed by a method using a dry film using the substrate on which the above copper layer was formed, and a ceramic wiring board could be manufactured.

【0013】(比較例1)スルホールが施され、焼結さ
れた厚み1mmのアルミナ基板を300℃に加熱した燐
酸中に5分間浸漬して、基板表面を粗化した後、十分に
水洗し乾燥した。この乾燥した基板を実施例と同じ無電
解銅メッキ液中に浸漬し、厚み35μmの銅層を前記基
板の表面に形成した。この場合の、銅層の形成に要した
時間は700分であった。
Comparative Example 1 An alumina substrate having a through hole and a thickness of 1 mm was immersed in phosphoric acid heated to 300 ° C. for 5 minutes to roughen the surface of the substrate, followed by thorough washing with water and drying. did. The dried substrate was dipped in the same electroless copper plating solution as in the example to form a 35 μm thick copper layer on the surface of the substrate. In this case, the time required for forming the copper layer was 700 minutes.

【0014】このようにして得られたセラミック基板の
表面に銅層が形成された基板の高温耐熱性を調べたとこ
ろ700℃の窒素雰囲気中で10分間加熱処理しても銅
層に剥がれやふくれの発生はなかった。
The high temperature heat resistance of the thus obtained ceramic substrate having a copper layer formed on the surface thereof was examined, and the copper layer was peeled and swelled even when heat-treated in a nitrogen atmosphere at 700 ° C. for 10 minutes. Did not occur.

【0015】そして、上記の銅層が形成された基板を用
いて、ドライフィルムを用いる方法で導体パターンを形
成し、セラミック配線板を製造することができた。
Then, a conductor pattern was formed by a method using a dry film using the substrate on which the above copper layer was formed, and a ceramic wiring board could be manufactured.

【0016】(比較例2)スルホールが施され、焼結さ
れた厚み1mmのアルミナ基板を用いて実施例と同様に
して厚み1μmの第1の銅層を前記基板の表面に形成し
た。次にこの第1の銅層が形成された基板を下記の電解
メッキ条件で電解メッキし第1の銅層の上に第2の銅層
を形成した。この場合の、第1の銅層の形成と第2の銅
層の形成に要した合計時間は90分であり、第1の銅層
と第2の銅層の厚みの合計は35μmであった。
Comparative Example 2 A 1 μm thick first copper layer was formed on the surface of the substrate in the same manner as in Example 1 by using a 1 mm thick alumina substrate which had been through-holed and sintered. Next, the substrate on which the first copper layer was formed was electroplated under the following electrolytic plating conditions to form a second copper layer on the first copper layer. In this case, the total time required to form the first copper layer and the second copper layer was 90 minutes, and the total thickness of the first copper layer and the second copper layer was 35 μm. ..

【0017】 電解メッキ条件 メッキ液の組成: 硫酸銅 75g/l 硫酸 180g/l 0.5N-HCl 3ml/l 光沢剤 5ml/l(光沢剤は上村工業社製のプリン
ト板スルホールメッキ用光沢剤商品名AC−90を使
用) 電流密度 : 2A/dm2 通電時間 : 75分 このようにして得られたセラミック基板の表面に銅層が
形成された基板の高温耐熱性を調べたところ400℃の
窒素雰囲気中で10分間加熱処理しても銅層に剥がれや
ふくれの発生はなかったが450℃の窒素雰囲気中で1
0分間加熱処理した場合には銅層に剥がれ及びふくれが
発生した。
Electrolytic plating conditions Composition of plating solution: Copper sulfate 75 g / l Sulfuric acid 180 g / l 0.5N-HCl 3 ml / l Brightener 5 ml / l (The brightener is a brightener for printed board through-hole plating manufactured by Uemura Kogyo Co., Ltd. AC-90 is used) Current density: 2 A / dm 2 Energization time: 75 minutes The high temperature heat resistance of the thus obtained ceramic substrate on which a copper layer is formed is 400 ° C. nitrogen atmosphere. There was no peeling or blistering on the copper layer even after heat treatment for 10 minutes in the atmosphere, but 1
When heat-treated for 0 minutes, peeling and blistering occurred on the copper layer.

【0018】この場合も、上記の銅層が形成された基板
を用いて、ドライフィルムを用いる方法で導体パターン
を形成し、セラミック配線板を製造することができた。
Also in this case, a ceramic wiring board could be manufactured by forming a conductor pattern by a method using a dry film using the above-mentioned substrate on which the copper layer was formed.

【0019】[0019]

【発明の効果】実施例と比較例の比較により明らかなよ
うに、本発明によると、セラミック基板の表面に銅層を
短時間で形成でき、且つ得られたセラミック基板の表面
の銅層は高温耐熱性に優れたものとなり、本発明はセラ
ミック配線板の製造に有用である。
As is clear from the comparison between the example and the comparative example, according to the present invention, a copper layer can be formed on the surface of a ceramic substrate in a short time, and the copper layer on the surface of the obtained ceramic substrate has a high temperature. Since it has excellent heat resistance, the present invention is useful for manufacturing a ceramic wiring board.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 セラミック基板の表面に銅層を形成して
セラミック配線板を製造する方法において、該銅層の形
成工程がセラミック基板の表面に無電解メッキにより第
1の銅層を形成する工程と、この第1の銅層の上に硫酸
及び硫酸銅のみよりなるメッキ液を用いて電解メッキに
より第2の銅層を形成する工程よりなることを特徴とす
るセラミック配線板の製法。
1. A method for manufacturing a ceramic wiring board by forming a copper layer on the surface of a ceramic substrate, wherein the step of forming the copper layer comprises forming a first copper layer on the surface of the ceramic substrate by electroless plating. And a step of forming a second copper layer on the first copper layer by electrolytic plating using a plating solution containing only sulfuric acid and copper sulfate.
JP21909191A 1991-08-30 1991-08-30 Manufacture of ceramic wiring board Pending JPH0563334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21909191A JPH0563334A (en) 1991-08-30 1991-08-30 Manufacture of ceramic wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21909191A JPH0563334A (en) 1991-08-30 1991-08-30 Manufacture of ceramic wiring board

Publications (1)

Publication Number Publication Date
JPH0563334A true JPH0563334A (en) 1993-03-12

Family

ID=16730117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21909191A Pending JPH0563334A (en) 1991-08-30 1991-08-30 Manufacture of ceramic wiring board

Country Status (1)

Country Link
JP (1) JPH0563334A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001152387A (en) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd Void-free copper plating method
JP2018172788A (en) * 2017-03-30 2018-11-08 ワイエムティー カンパニー リミテッド Production method of porous copper foil and porous copper foil using the production method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001152387A (en) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd Void-free copper plating method
JP2018172788A (en) * 2017-03-30 2018-11-08 ワイエムティー カンパニー リミテッド Production method of porous copper foil and porous copper foil using the production method

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