JPH0559849U - Semiconductor element mounting structure - Google Patents

Semiconductor element mounting structure

Info

Publication number
JPH0559849U
JPH0559849U JP001282U JP128292U JPH0559849U JP H0559849 U JPH0559849 U JP H0559849U JP 001282 U JP001282 U JP 001282U JP 128292 U JP128292 U JP 128292U JP H0559849 U JPH0559849 U JP H0559849U
Authority
JP
Japan
Prior art keywords
semiconductor element
circuit board
mounting structure
metal fitting
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP001282U
Other languages
Japanese (ja)
Inventor
亮一 長岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP001282U priority Critical patent/JPH0559849U/en
Publication of JPH0559849U publication Critical patent/JPH0559849U/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Abstract

(57)【要約】 【目的】 半導体素子を回路基板に実装する場合に、電
気的接続距離を最短にし且つ熱的に安定な実装構造を提
供する。 【構成】 半導体素子1の外部接続用電極に半田バンプ
2を形成してフェイスダウンにて回路基板3に実装し、
中央片5aの中央部に複数の穴6をメッシュ状に形成し
且つ全体の形状を略コ字状に形成した金属金具5を半導
体素子1の上から回路基板3に固定し、半導体素子1と
金属金具5の中央片5aとの間に良好な熱伝導性を有す
るペースト8を介在させる。これにより半導体素子1で
発生する熱を金属金具5に逃がし熱抵抗の低減をはか
る。
(57) [Summary] [Object] To provide a thermally stable mounting structure with the shortest electrical connection distance when mounting a semiconductor element on a circuit board. [Structure] A solder bump 2 is formed on an external connection electrode of a semiconductor element 1 and mounted on a circuit board 3 face down.
A metal fitting 5 having a plurality of holes 6 formed in a mesh shape in the central portion of the central piece 5a and the overall shape of which is formed in a substantially U shape is fixed to the circuit board 3 from above the semiconductor element 1. The paste 8 having good thermal conductivity is interposed between the metal piece 5 and the central piece 5a. Thereby, the heat generated in the semiconductor element 1 is released to the metal fitting 5 to reduce the thermal resistance.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は半導体素子の実装構造に関する。 The present invention relates to a semiconductor device mounting structure.

【0002】[0002]

【従来の技術】[Prior Art]

従来、半導体素子を裸の状態で回路基板に実装する構造としては、図3に示す ように半導体素子51の回路面を上にして回路基板52に取り付け、半導体素子 51の外部接続用電極53と回路基板52に設けられたパターン54との間に金 ワイヤ55により接続する方法等のワイヤボンディングにより行う構造(フェイ スアップ)と、図4に示すように、半導体素子51の外部接続用電極53に半田 バンプ56を設け、半導体素子51の回路面を下にして回路基板52に取り付け ると同時にパターン54と半田バンプ56が接続される構造(フェイスダウン) が一般的に用いられている。 Conventionally, as a structure in which a semiconductor element is mounted on a circuit board in a bare state, as shown in FIG. 3, the semiconductor element 51 is attached to the circuit board 52 with the circuit surface of the semiconductor element 51 facing upward, A structure (phase-up) performed by wire bonding such as a method of connecting a gold wire 55 to the pattern 54 provided on the circuit board 52 and an external connection electrode 53 of the semiconductor element 51 as shown in FIG. A structure (face down) is generally used in which the solder bumps 56 are provided, and the circuit surface of the semiconductor element 51 is attached to the circuit board 52, and at the same time, the pattern 54 and the solder bumps 56 are connected.

【0003】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

図3に示すフェイスアップの実装構造では、半導体素子が回路基板に直に接続 されているため、回路基板の材質を熱伝導性の良好なものを選択することで、半 導体素子の発熱を回路基板に逃がすことができ熱的に安定である。しかし、半導 体素子の外部接続用電極と回路パターンとの接続距離が長くなるため、使用周波 数が高くなると特性劣化を招き好ましくない。 In the face-up mounting structure shown in Fig. 3, the semiconductor element is directly connected to the circuit board. Therefore, by selecting a material with good thermal conductivity for the circuit board, the semiconductor element heat generation It can be released to the substrate and is thermally stable. However, since the connection distance between the external connection electrode of the semiconductor element and the circuit pattern becomes long, the use of a higher frequency undesirably deteriorates the characteristics.

【0004】 図4に示すフェイスダウンの実装構造では、半導体素子の外部接続用電極と回 路基板のパターンとの接続距離を最短にすることができるため、高周波帯域での 使用が可能である。しかし、半導体素子の発熱を逃がす経路が接続用半田バンプ のみであるため熱抵抗が高く、消費電力の制約があるという欠点があった。In the face-down mounting structure shown in FIG. 4, since the connection distance between the external connection electrode of the semiconductor element and the pattern of the circuit board can be minimized, it can be used in a high frequency band. However, there is a drawback that the thermal resistance is high and the power consumption is limited because the path through which the heat generated by the semiconductor element is released is only the solder bumps for connection.

【0005】 本考案の目的は、電気的接続距離を最短にすると共に熱的に安定な半導体素子 の実装構造を提供することにある。An object of the present invention is to provide a thermally stable semiconductor element mounting structure while minimizing the electrical connection distance.

【0006】[0006]

【課題を解決するための手段】[Means for Solving the Problems]

本考案の半導体素子の実装構造は、外部接続用電極に半田バンプを形成した半 導体素子をフェイスダウンにて回路基板に実装し、略コ字状に形成され且つ中央 部をメッシュ状に形成した金属金具を半導体素子の上部から取り付けて回路基板 に固定し、金属金具の中央部と半導体素子との間に良好な熱伝導性を有するペー ストを介在させている。 According to the semiconductor element mounting structure of the present invention, a semiconductor element having solder bumps formed on electrodes for external connection is mounted face down on a circuit board, and is formed into a substantially U shape and a central portion is formed into a mesh shape. The metal fitting is attached from above the semiconductor element and fixed to the circuit board, and a paste having good thermal conductivity is interposed between the central part of the metal fitting and the semiconductor element.

【0007】[0007]

【実施例】【Example】

次に本考案の実装例について図面を参照して説明する。 Next, an implementation example of the present invention will be described with reference to the drawings.

【0008】 図1は本考案の一実施例の半導体素子の実装構造の斜視図、図2は図1の縦断 面図である。FIG. 1 is a perspective view of a semiconductor element mounting structure according to an embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view of FIG.

【0009】 図において、半導体素子1の外部接続用電極には半田バンプ2が形成されてい る。この半導体素子1を回路面を下にしたフェイスダウンにて回路基板3上に搭 載し、加熱することで回路基板3に形成されたパターン4と電気的に且つ機械的 に接続されている。In the figure, solder bumps 2 are formed on the electrodes for external connection of the semiconductor element 1. The semiconductor element 1 is mounted on the circuit board 3 face down with the circuit surface facing down, and is electrically and mechanically connected to the pattern 4 formed on the circuit board 3 by heating.

【0010】 金属金具5は略コ字状に形成され、中央片5aの中央部には複数の穴6がメッ シュ状に形成されている。金属金具5の高さは半導体素子1の高さよりも僅かに 高く形成されており、中央片5aが半導体素子1と接触することのないように形 成されている。The metal fitting 5 is formed in a substantially U shape, and a plurality of holes 6 are formed in a mesh shape at the center of the center piece 5a. The height of the metal fitting 5 is formed to be slightly higher than the height of the semiconductor element 1, and the central piece 5a is formed so as not to come into contact with the semiconductor element 1.

【0011】 金属金具5の側片5bは回路基板1に設けたパターン7に半田付け等によって 固着されている。The side piece 5b of the metal fitting 5 is fixed to the pattern 7 provided on the circuit board 1 by soldering or the like.

【0012】 回路基板3に実装された半導体素子1の上部に金属金具5を取り付けると共に この金属金具5を回路基板3に固定した後、金属金具5の中央片5aの中央部に 形成したメッシュ状の穴6から、この中央片5aと半導体素子1の裏面(図にお ける上面)との間隙に良好な熱伝導性を有するペースト8を押し込んで充填する 。After the metal fitting 5 is attached to the upper part of the semiconductor element 1 mounted on the circuit board 3 and the metal fitting 5 is fixed to the circuit board 3, a metal mesh 5 is formed on the central portion of the central piece 5 a of the metal fitting 5. A paste 8 having good thermal conductivity is pressed and filled into the gap between the central piece 5a and the back surface (top surface in the figure) of the semiconductor element 1 through the hole 6.

【0013】 上記構造において、半導体素子1から発生する熱は半導体素子1の半田バンプ 2から回路基板3への経路と、半導体素子1の裏面からペースト8を介して金属 金具5への経路を経て放熱される。In the above structure, the heat generated from the semiconductor element 1 passes through the path from the solder bump 2 of the semiconductor element 1 to the circuit board 3 and the path from the back surface of the semiconductor element 1 to the metal fitting 5 via the paste 8. Heat is dissipated.

【0014】[0014]

【考案の効果】[Effect of the device]

以上説明したように本考案の半導体素子の実装構造では、半導体素子と回路基 板との接続が最短距離で行え、且つ半導体素子の発熱を逃がす経路を設けたため 半導体素子からの熱抵抗が低く、消費電力の大きな半導体素子を実装することが でき、また高周波帯域での特性劣化を少なくすることができるという効果を有す る。 As described above, in the semiconductor element mounting structure of the present invention, the connection between the semiconductor element and the circuit board can be made in the shortest distance, and since the path for releasing the heat of the semiconductor element is provided, the thermal resistance from the semiconductor element is low, This has the effect that a semiconductor element with high power consumption can be mounted and the characteristic deterioration in the high frequency band can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の一実施例の半導体素子の実装構造の斜
視図である。
FIG. 1 is a perspective view of a mounting structure of a semiconductor device according to an embodiment of the present invention.

【図2】図1の縦断面図である。FIG. 2 is a vertical sectional view of FIG.

【図3】従来の半導体素子の実装構造(フェイスアッ
プ)の斜視図である。
FIG. 3 is a perspective view of a conventional semiconductor element mounting structure (face-up).

【図4】従来の半導体素子の実装構造(フェイスダウ
ン)の斜視図である。
FIG. 4 is a perspective view of a conventional semiconductor element mounting structure (face down).

【符号の説明】[Explanation of symbols]

1 半導体素子 2 半田バンプ 3 回路基板 4,7 パターン 5 金属金具 5a 中央片 5b 側片 6 穴 8 ペースト 1 semiconductor element 2 solder bump 3 circuit board 4, 7 pattern 5 metal fitting 5a center piece 5b side piece 6 hole 8 paste

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】外部接続用電極に半田バンプを形成した半
導体素子をフェイスダウンにて回路基板に実装する半導
体素子の実装構造において、略コ字状に形成され且つ中
央部をメッシュ状に形成した金属金具を回路基板に実装
した半導体素子の上部から取り付けると共に回路基板上
に固定し、金属金具のメッシュ状部分と半導体素子との
間に良好な熱伝導性を有するペーストを介在させたこと
を特徴とする半導体素子の実装構造。
1. A semiconductor element mounting structure in which a semiconductor element having a solder bump formed on an external connection electrode is mounted face down on a circuit board. The semiconductor element mounting structure is formed in a substantially U shape and a central portion is formed in a mesh shape. The metal fittings are attached from above the semiconductor element mounted on the circuit board and fixed on the circuit board, and a paste having good thermal conductivity is interposed between the mesh-shaped portion of the metal fittings and the semiconductor element. And the mounting structure of the semiconductor element.
JP001282U 1992-01-17 1992-01-17 Semiconductor element mounting structure Pending JPH0559849U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP001282U JPH0559849U (en) 1992-01-17 1992-01-17 Semiconductor element mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP001282U JPH0559849U (en) 1992-01-17 1992-01-17 Semiconductor element mounting structure

Publications (1)

Publication Number Publication Date
JPH0559849U true JPH0559849U (en) 1993-08-06

Family

ID=11497099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP001282U Pending JPH0559849U (en) 1992-01-17 1992-01-17 Semiconductor element mounting structure

Country Status (1)

Country Link
JP (1) JPH0559849U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017112348A (en) * 2015-12-17 2017-06-22 ▲き▼邦科技股▲分▼有限公司 Heat dissipation package device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017112348A (en) * 2015-12-17 2017-06-22 ▲き▼邦科技股▲分▼有限公司 Heat dissipation package device

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