JPH0559555A - Surface treating device - Google Patents

Abstract

PURPOSE:To provide a surface treating device capable of executing uniform surface treatment having high reliability even in a small-sized device. CONSTITUTION:This device is constituted in such a manner that plural gas introducing pipes 11 and 12 are crossed in the vicinity of their tips at a prescribed angle, and plural reactive gases are crossed and mixed in the vicinity of a gas feed port at a prescribed angle and are introduced on the surface of the substrate 13 to be treated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus, and more particularly to the supply of a reactive gas to a reaction chamber used in a low pressure chemical vapor deposition (CVD) method or the like.

[0002]

2. Description of the Related Art One of methods for forming a semiconductor thin film on a substrate surface is a low pressure CVD method for forming a thin film under reduced pressure.

In the low pressure CVD method, a thin film can be formed on a large number of semiconductor substrates at once, or a thin film can be formed even at an extremely low temperature such as room temperature. Therefore, in the process of forming a semiconductor integrated circuit. Is one of the important methods. Since this method is a reaction at a low temperature, a highly reactive gas is used. Therefore, generally, a method of causing a reaction by mixing a reactive gas in a reaction chamber for forming a thin film is adopted.

However, in recent years, with the increase in diameter of semiconductor substrates, as shown in FIG. 3, the distance between the gas inlets 1 and 2 into the reaction container and the sample substrate is becoming smaller. Therefore, the gas mixing ratio is not uniform on the sample substrate 3 in the vicinity of the gas inlet, and as a result, the uniformity of the film thickness in the surface of the sample substrate is in the upper portion, that is, at a position away from the gas inlet. There was a problem that it was lower than that of the sample substrate.

[0005]

As described above, in the conventional low pressure CVD apparatus, the gas mixing ratio is not uniform in the vicinity of the gas inlet, and as a result, the uniformity of the film thickness on the surface of the sample substrate is not uniform. , There was a problem of being bad.

The problem of deterioration of uniformity is not limited to the thin film formation, but is the same not only in the etching using two or more kinds of reactive gases.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a surface treatment apparatus capable of performing uniform and highly reliable surface treatment even in a small apparatus.

[0008]

Therefore, in the present invention, in a surface treatment apparatus for supplying a plurality of reactive gases into a reaction chamber to perform a surface treatment, a plurality of gas introduction pipes form a predetermined angle in the vicinity of the tip. It is configured to form and intersect.

[0009]

According to the above construction, since the plurality of gas introduction pipes are arranged close to each other in the vicinity of the tip so as to intersect each other at a predetermined angle, a plurality of reaction gas is introduced in the vicinity of the gas supply port to the reaction chamber. The characteristic gas is ejected at a predetermined angle, intersects well, is mixed well, and is guided to the surface of the substrate to be processed, so that it is possible to perform uniform thin film formation or etching even on the substrate surface in the vicinity of the gas supply port.

[0010]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a low pressure CVD apparatus according to an embodiment of the present invention.

In this low pressure CVD apparatus, silicon substrates 13 are arranged in parallel with each other at a predetermined interval on a substrate support 14 provided in a reaction vessel 10, and SiH ₂ is directed toward these silicon substrates 13. It is characterized in that a first introduction pipe 11 for supplying Cl ₂ and a second introduction pipe 12 for introducing NH ₃ are installed so that their tips are orthogonal to each other.

Other parts are formed in the same manner as the conventional device.

That is, this apparatus is equipped with a 1 Torr reaction vessel 1
A substrate support base 14 which also serves as a heater for placing the substrate 13 to be processed and maintaining the substrate at a predetermined temperature is provided in the front end of the first introducing pipe 11 and the second introducing pipe 12. In the vicinity, the injection directions of the gases are crossed and mixed well, and the mixed gas is guided onto the substrate 13 to be processed placed on the surface of the substrate support 14.
A silicon thin film is formed. Here, the substrate temperature is maintained at about 800 ° C. and the first
And SiH ₂ Cl ₂ and NH from the second gas supply pipe
₃ was supplied at a ratio of 1:10 and discharged from a gas discharge port (not shown) so that the inside of the reaction vessel 10 was 1 To.
A reduced pressure of about rr is maintained.

According to this low pressure CVD apparatus, in the vicinity of the tips of the first introduction pipe 11 and the second introduction pipe 12, the gas injection directions are made to intersect with each other so that the gas is mixed well, and the substrate to be processed 1 is processed.
It is possible to form a uniform and highly reliable thin film because it can be guided to the upper side. In the above embodiment, the first and second gas supply pipes are arranged so as to be orthogonal to each other.
As shown in FIGS. 2A and 2B, they may intersect each other at an acute angle or an obtuse angle. When the distance between the gas supply port and the substrate to be processed is relatively long, it is preferable to install the so as to form an acute angle with each other as shown in FIG. On the other hand, when the distance between the gas supply port and the substrate to be processed is relatively short,
As shown in FIG. 2 (b), it is preferable to install them so that they intersect each other at an obtuse angle.

Furthermore, as shown in FIGS. 2 (c) and 2 (d), it is also applicable to the case where three or more gas supply pipes are used.

Further, although the vertical type low pressure CVD apparatus has been described in the above embodiment, it is needless to say that the present invention can be applied to other types of low pressure CVD apparatus such as a horizontal type, and further to an etching apparatus.

[0018]

As described above, according to the present invention, a plurality of gas introduction pipes are brought close to each other in the vicinity of the tip so as to intersect each other at a predetermined angle, so that a plurality of reactive gases are provided. Since they are mixed with each other at good angles and are mixed well, and are guided to the surface of the substrate to be processed, it is possible to perform uniform thin film formation or etching even on the substrate surface in the vicinity of the gas supply port.

[Brief description of drawings]

FIG. 1 is a diagram showing a low pressure CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a view showing an arrangement example of gas introduction pipes according to another embodiment of the present invention.

FIG. 3 is a diagram showing a conventional low pressure CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 gas introduction pipe 2 gas introduction pipe 3 processed substrate 10 reaction vessel 11 first gas introduction pipe 12 second gas introduction pipe 13 processed substrate 14 substrate support

Claims (1)

[Claims] 1. A reaction chamber, a substrate support table installed in the reaction chamber for supporting a substrate to be processed, and a plurality of reactive gases forming a predetermined angle in the reaction chamber near a gas supply port. It is provided with a plurality of gas introduction pipes whose tips are close to each other at a predetermined angle so that they are mixed and mixed and guided to the surface of the substrate to be processed on the substrate support, and the reactivity is reduced under reduced pressure. A surface treatment apparatus in which a gas is mixed and a thin film is formed or etched on the surface of the substrate to be treated.