JPH0558072B2 - - Google Patents

Description

[Detailed description of the invention] (a) Industrial application field The present invention creates a predetermined active species and utilizes it to produce insulator films, semiconductor films, and metal films of special semiconductor devices. film formation, etching,
The present invention relates to a surface treatment method and apparatus for surface treatment such as surface cleaning and surface modification.

(b) Conventional technology A method of activating a gas by a reaction using active species, depositing a target substance on the surface of a substrate to form a thin film, etching, surface modification, etc. can be performed at low temperatures. Rapid progress has been made in recent years due to the fact that there is no damage due to the impact of charged particles, the selectivity of active species enables unprecedented processing, and it is easy to select the reaction process and control film formation. It's showing.

In general, active species can be created by irradiating a substance with light or electrons, but the active state created by light is either an active state in which phototransition is not prohibited, or an active state in which phototransition is not prohibited. In contrast, active states that are generated by intersystem crossing or relaxation from active states that are not activated are not limited to the above, but active states that are generated by particle collisions in plasmas, electron beams, etc. are not limited to the above, and optical transitions are prohibited. The transition easily expands to the active state in which light is present, and unlike in the case of light, it creates a variety of active species that are harmful and contain impurities. In most conventional techniques for film formation using plasma, the substrate is in direct contact with the plasma, so these harmful active species and charged particles in the plasma impact and damage the substrate, causing damage to the substrate. This has drawbacks, such as adding impurities to the substrate, which may degrade the electrical characteristics of semiconductor devices fabricated on this substrate, for example. Such deterioration is strongly manifested in, for example, variations in Vth in MOS semiconductor devices and variations in hfe in bipolar semiconductor devices. As the degree of integration of semiconductor devices becomes extremely large these days, even the impact of minute charged particles can cause significant deterioration of electrical characteristics, so active species with low impurities are used. or
The development of non-damaging processes, such as the use of non-impact light, has become particularly desirable.

(c) Purpose of the invention This invention stably produces highly pure active species useful for surface treatment, and by using this, high quality can be achieved at a speed sufficient for industrial use. The purpose of the present invention is to provide a novel surface treatment method and apparatus that can perform effective surface treatment.

(d) Structure of the Invention The first invention of the present application generates LTE discharge by introducing a predetermined gas into a space to which alternating power is applied, and converts active species generated in the plasma of this LTE discharge into The above object has been achieved by a surface treatment method in which a predetermined treatment is applied to the surface of a substrate by guiding the discharge to the surface of the substrate placed outside the LTE discharge.

Further, the second invention of the present application uses the method of the first invention to realize an apparatus that can be fully used industrially with the following configuration. That is, it includes a reaction chamber that accommodates a substrate to be processed, an alternating power source, and a discharge chamber provided with a discharge space to which alternating power of the power source is applied by inductive coupling, capacitive coupling, or cavity resonance; The alternating current power source comprises means for introducing a predetermined gas into the discharge space, and irradiation means for guiding active species generated in the discharge plasma in the discharge space to the surface of the gas to be treated in the reaction chamber. LTE in the discharge space
It has a power capacity large enough to generate a discharge, and the value obtained by dividing [the power capacity of the alternating power source] by [the opening area that the discharge space opens toward the base body] is 2 W/cm ² or more. A device configured such that
This is an apparatus version of the above method.

(E) Embodiment FIG. 1 shows a surface treatment apparatus according to an embodiment of the present invention. 10 is a discharge chamber, and 20 is a reaction chamber. The discharge chamber 10 is composed of a high frequency (several KHz to several hundred MHz) power source 1, a coil 2, and a discharge tube 6. When a high frequency voltage emitted from the power source 1 is applied to the coil 2, the inside of the discharge tube 6 is A discharge occurs in the discharge space 60 that is inductively coupled to the high frequency. This may be done by providing a pair of plate-shaped electrodes sandwiching the discharge tube 6 in place of the coil 2, and applying electric power to these to create a capacitively coupled discharge space 60. When using a frequency in the microwave region (GHz order) as the high frequency, a microwave cavity is installed to surround the discharge tube 6 instead of the coil 2.
At this time, the discharge space 60 of cavity resonance is used. Then, discharge gas is introduced into the discharge tube 6 in which discharge has occurred as described above from the direction of the flow 5 via the bulb 4. The discharge tube 6 is usually made of an insulating material, such as quartz glass, sapphire, or ceramics. If quartz glass is used, there is a risk that the quartz glass will melt due to the high temperature of the discharge plasma, so it is recommended to make the discharge tube 6 a double tube of quartz glass and to flow cooling water between the two tubes, the inner and outer tubes. be.

As the applied high-frequency power increases, high-frequency glow discharge occurs first, but when even higher power is applied, the light emission from the plasma increases dramatically and LTE (Local Thermal (strictly speaking, "LTE") occurs. "Thermal equilibrium state", but there is no suitable academic term for it.) Plasma 3 is observed to be generated.LTE
The generation of plasma 3 is often hysteretic. This plasma 3 has very high brightness and often exhibits a spectral pattern different from that of a normal DC glow discharge.

For example, assuming that the gas introduced above is hydrogen, in the case of hydrogen, during normal DC glow discharge or high frequency glow discharge, there is a continuous spectrum that first reaches from the visible light region to the ultraviolet light region due to hydrogen molecules. However, in addition to this, it is also possible to observe Balmer series and Lyman series emissions caused by hydrogen atoms. However, the emission of these series at this time is relatively weak, so the color of the emitted light is whitish-purple.

However, when LTE plasma 3 is generated,
Visually, the color of the synchrotron radiation is a red color with very high brightness, and we know that this is the result of the extremely high brightness of the Balmer system of light emitted by hydrogen atoms.
At the same time, it is not directly visible because it is not in the visible area, but
Measurements confirm that the Lyman luminance has also increased significantly. The manner in which this brightness increases is illustrated in FIG. 2. (The wavelength of the light emitted, which is one of the most important characteristics when generating an LTE discharge, is determined by the type of gas used to generate the plasma.) In addition to hydrogen, the gases introduced above may include nitrogen, argon, etc. Gases such as , helium, mercury, and mixtures thereof are also capable.

When the introduced gas mentioned above is hydrogen, the LTE plasma contains an extremely large amount of hydrogen atoms, excited states of hydrogen molecules, hydrogen radicals, ions, and other active species compared to normal high-frequency glow discharge. can be confirmed by emission spectrometry. The generation of a large amount of active species in LTE discharge plasma means that other gases,
For example, the same applies to nitrogen, and FIGS. 3 and 4 show the results of vacuum ultraviolet emission spectroscopic analysis of nitrogen. Figure 3 shows the emission analysis of LTE plasma, and Figure 4 shows the emission analysis of high-frequency glow plasma. Both plasmas are produced together using the same equipment.
13.56MHz, 2.5kW, pressure 70mTorr, _N2 flow rate 30sc
It was obtained under cm conditions. Under these conditions for creating this device, the two states of LTE and high-frequency glow transition to each other in a hysteretic manner, so it is possible to create and compare the two states of LTE and high-frequency glow under the same conditions. The vertical axes showing the luminescence intensity are in arbitrary units in both figures, but the scale of the vertical axis of the LTE graph has been compressed to almost 100 times the scale of the vertical axis of the glow discharge graph. When comparing the intensity of light at 120 nm, LTE has 120 times the emission intensity compared to high-frequency glow. As in the case of hydrogen mentioned above, in the case of nitrogen, LTE plasma has a strong brightness of short wavelength light, and this spectrum may be due to the fact that it belongs to light emission from nitrogen atoms. It is clear that it contains a lot of. Note that similar results can be obtained not only for hydrogen and nitrogen but also for oxygen and other gases.

Comparing high-frequency glow discharge and high-frequency LTE plasma discharge, there are the following differences between the two, and even if one or two of the following conditions are lacking, the two can be easily distinguished.

(a) In high-frequency glow discharge, the light-emitting part tends to spread, whereas in high-frequency LTE plasma discharge, the light-emitting part tends to gather locally.

(b) The light emission of both discharges for LTE plasma generation has different spectral patterns. This difference in spectra clearly indicates that there is a difference in electronic state. When the gas is a polyatomic molecule, excitation of vibrational and rotational modes not seen in high-frequency glow discharges is often observed in high-frequency LTE plasma discharges.

(c) High-frequency glow discharge state and high-frequency LTE plasma discharge state are defined as the discharge power,
Using discharge pressure and other parameters as parameters, the discharge impedances often change from one to the other in a hysteresis loop, and the discharge impedance differs greatly between the two discharges.

This transition is most dependent on the intensity of the discharge power input from the power source into the discharge chamber. This will be discussed further later.

(d) High-frequency LTE plasma discharge has much higher brightness than high-frequency glow discharge plasma. The difference is significant.

For example, in the case of a gas such as helium, the discharge impedance does not change in a hysteresis manner, so it is difficult to distinguish between high-frequency glow discharge and high-frequency LTE plasma from impedance alone. It was observed that the bright plasma was localized, and both discharges could be distinguished by visual inspection.

Next, the reaction chamber 20 will be explained.
0 consists of a reaction vessel 7 that can be kept airtight if necessary, an introduction ring 13 provided therein for introducing a reaction gas, and a substrate holder 8 for installing a substrate 16.

A mesh-shaped electrode 30 is provided between the reaction chamber 20 and the discharge chamber 10 to introduce active species 18 from the LTE plasma 3 generated in the discharge chamber 10 onto the surface of the substrate 16 of the reaction chamber 20. There is. A predetermined reaction gas is directed through a valve 11 in a flow direction 12.
The liquid is introduced into the hollow introduction ring 13 and is blown out onto the surface of the substrate 16 from a large number of small holes 130 provided inside the ring, thereby being supplied into the reaction vessel 7 . A temperature controller 9 is installed in the substrate holder 8, and the temperature of the substrate 16 can be adjusted as necessary.

The gas introduced into the discharge chamber and the reaction gas introduced into the reaction chamber are introduced into the gas flow 1 through the valve 14.
It is exhausted in the direction of 5. When the discharge chamber 10 and the reaction chamber 20 are made to communicate widely, the pressure increases by several times.
In the region below Torr, a glow-like plasma spreading around the high-frequency LTE plasma often appears in the reaction chamber 7.
It spreads to the inside of. The mesh-shaped electrode 30 described above can be provided with an adjustment function to prevent or encourage this.

The structure, shape, and material of this electrode 30 may be selected to adjust the spread of glow-like plasma within the reaction chamber 20 or to transfer the active species 18 to the substrate 16 as described above.
Any material may be used as long as it can be introduced onto the surface of the material, and is not necessarily limited to mesh-like materials. By applying a voltage to this electrode 30, it is possible to enhance the shielding effect of the plasma, or conversely, draw charged particles from the plasma into the reaction chamber 20 to actively utilize the charged particles for surface treatment. Further, it may be of a blind type in order to specifically exclude plasma and synchrotron radiation.

Further, a capacitor of an appropriate capacity can be installed between the electrode 30 and the ground potential, and the potential can be set to a ground potential in terms of high frequency and a floating potential in terms of direct current. In this case, abnormal discharge is reduced and the shielding effect is increased. Similarly, a bandpass filter may be used between the electrode 30 and the ground potential.

It is also possible to provide a similar charged particle adjustment effect by setting a magnetic field here instead of the electrode 30. FIG. 6 shows an example of this, in which microwave power is injected into a cavity resonator 305 installed in a magnetic field B generated by an electromagnetic coil 304 through a waveguide 301 and a microwave introduction window 302. creates LTE plasma 3 within this cavity, and the above forms a discharge chamber 10. The charged particles in the LTE plasma 3 are accelerated by the divergent portion of the magnetic field B and are deflected onto the base 16.

Note that it is also possible to remove the electrode 30 and actively utilize the glow-like plasma that spreads within the reaction chamber 20.

When using the apparatus shown in FIG. 1 and using nitrogen as the gas introduced into the discharge chamber 10 and silane gas as the gas introduced into the reaction chamber 20, the
A SiN film was created. The conditions at this time were: substrate temperature 200°C, pressure 700 mTorr, SiH ₄ flow rate 25 sccm, N ₂
The flow rate is 20sccm and the power is 3.5kW (13.56MH ₂ ).

Furthermore, using the same apparatus shown in FIG. 1, oxygen is used as the gas introduced into the discharge chamber 10, and oxygen radicals, ozone, etc. are created using LTE plasma.
By using short-wavelength oxygen light, oxygen radicals, or ozone, organic substances on the surface of the substrate can be decomposed into water and carbon dioxide, and the surface of the substrate can be cleaned. In this case, no gas is required to be introduced into the reaction chamber, and therefore the introduction ring 13 and the like are not required.

FIG. 7 shows a light shielding net 121, 122 that allows only the active species 17 of the LTE plasma 3 to pass through, at the boundary between the discharge chamber 10, which uses the same type of microwave power as shown in FIG. 6, and the reaction chamber 20. It has been established. Ar is used as the discharge gas, and Ar has an energy of approximately 11.5 to 11.7 eV in LTE plasma 3.
The active species is created and introduced into the reaction chamber 10, and this energy is used to dissociate the reaction gas SiH ₄ (activation energy approximately 60 eV) and Si ₂ H ₆ to deposit an amorphous silicon film on the substrate 16. It is something that makes you

Furthermore, in the apparatus shown in FIG. 7, not only Ar but also He active species may be used. Furthermore, when H ₂ is used as the discharge gas, the LTE plasma dissociates H ₂ to generate a large amount of H atoms and excited species of H and H ₂ .
This clearly shows that the color of H ₂ discharge is "red" in LTE plasma, that is, the emission intensity of H atoms is greatly increased.

This H atom reacts with SiH ₄ or Si ₂ H ₆ to cause a hydrogen abstraction reaction and decompose SiH ₄ or Si ₂ H ₆ . Using this reaction, the substrate temperature can be reduced to approximately 500°C.
An a-Si film can be formed below, and a polycrystalline Si film can be formed above about 500°C.

In addition, when NH ₃ is used as the discharge gas, LTE
A large number of N atoms and H atoms are generated inside the plasma.
This is clear from the fact that the luminescence of N atoms at 745.2 nm and 821.3 nm and the luminance of the Balmer system of H atoms are extremely high in emission spectroscopic analysis from LTE plasma.

Using these N atoms and H atoms, SiH ₄ ,
It can react with SiH ₆ to create a SiN film on the substrate surface.

In addition, when N ₂ O is used as the discharge gas, LTE
A large number of O atoms and N atoms are generated inside the plasma.
When this active species is used, it is possible to react with SiH ₄ or Si ₂ H ₆ to create a high-quality SiO ₂ film (no N atoms can be observed in Auger electron spectroscopy).

By the way, there have been many devices (plasma CVD devices) that utilize glow discharge with the same structure as the present invention, and some of these devices can be easily modified by simply increasing the amount of electric power applied to the device of the present invention. There are quite a number of things that turn into.

So, what are the characteristics of a certain device that can identify it as the device of the present invention?
As mentioned above, this is the emission intensity of plasma. The main reason for the increase in luminous intensity is the power capacity of the power supply added to the device body. More specifically, firstly, the size of the current incoming agricultural power of the power supply is determined with respect to the accumulation of the discharge space, and secondly, with respect to the opening area where the discharge space opens toward the substrate to be processed.

In the following, this point will be explained in detail.

SiN film is an extremely important film for coating semiconductor devices, but it is not easy to obtain a SiN film that is robust, dense, has high elasticity (cracking resistance), and has excellent step coverage. The film forming process is required not to damage the substrate to be processed, which increases the difficulty. However, as devices become smaller, the need for high-quality membranes is becoming more acutely felt.

Conventional SiN films have been obtained by sputtering using SiN material as a target, or by plasma CVD, which exposes the substrate to be processed during a glow discharge of a mixed gas of silane gas, nitrogen gas, and ammonia gas, but both methods are difficult to obtain. This does not satisfy the above requirements. The film obtained by the former method has poor step coverage and is severely damaged, and the film obtained by the latter method has quality problems because it contains a large amount of H produced by decomposition of ammonia.

In the course of experimental research to solve the above problem, the inventors of the present application first discovered that an extremely high quality SiN film could be obtained without any damage using the method and apparatus described above. Even a high-quality film is useless if it takes a long time to form. In order to incorporate it into the process of semiconductor device manufacturing, an appropriate film formation rate is required. (Incidentally, in the plasma CVD method described above, the film formation rate has finally been made practical by adding ammonia to the gas.) The goal was to create a device that could create SiN films at a practical speed.

And [practical speed] is [100Å/
min or more] was adopted. This [100Å/min or more]
was obtained based on the assumption that the minimum requirement for industrial use is that the coating process for one batch takes less than one hour, and that a film thickness of 6000 Å or more than the usual passivation film thickness must be obtained during this time.

Now, when creating LTE plasma by introducing nitrogen gas into the discharge chamber to create a SiN film using the apparatus shown in Figure 1, what is particularly important is the relationship between the structure and shape of the LTE plasma discharge chamber and the applied power. . When the discharge chamber is mainly made of a cylindrical quartz tube, the relationship between the inner diameter of the quartz tube and the electric power has a great significance on the LTE plasma creation conditions. A-B and C-B in Figure 5 show the relationship between the inner diameter of the quartz tube (horizontal axis) and the injected power deposition density ([injected power]/[discharge space deposition]) (vertical axis) for LTE discharge. Show a curve.

The C-B curve in Figure 5 shows the volume density of the injected power that changes to the LTE state when power is added from the glow state, and the A-B curve shows the volume density when the power is reduced from the LTE state. It shows the volume density of the injected power that causes a glow state. Both states can stably exist within the range surrounded by both curves. Therefore, devices using LTE plasma must have a power supply capacity that exceeds the C-B curve, or have some type of LTE plasma generation trigger mechanism and a power supply capacity that exceeds the A-B curve. is necessary.

The hysteresis phenomenon occurs when a quartz tube with an inner diameter of about 7 cm or less is used, and if we take the case of a quartz tube with an inner diameter of 1 cm, when power is gradually applied from the glow state, the discharge will not start at 820 W/cm ³ until LTE However, if you gradually lower the power from LTE mode, it will not go into glow mode unless you lower it to 480W/ ^cm3 . Both states can stably exist between 480W/cm ³ and 820W/cm ³ .

(Therefore, the glow state and the LTE state can be compared under the same conditions of power density, pressure, gas flow rate, etc., e.g. from the 2s ² 2p ² 3s ( ⁴ P) state of a nitrogen atom to the 2s ² 2p ³ ( ⁴ S) state. Comparing the emission intensity of 120 nm light due to the transition to the glow state,
In the LTE state, a remarkable improvement of approximately two orders of magnitude increase in luminous intensity is observed. Because of this etc.
It has been revealed that in the LTE state, many nitrogen molecules dissociate into nitrogen atoms, and the concentration of nitrogen atoms increases significantly. ) When the inner diameter of the quartz tube becomes 7 cm or more, the hysteresis region disappears and the volume density of the injected power decreases. When the inner diameter of the quartz tube becomes 15 cm, the required injection power volume density becomes a little less than 0.2 W/cm ³ . According to experiments, the injected power volume density shown by these AB and CB curves hardly changes depending on the flow rate of the discharge gas. As for how the gas pressure is affected, it only changes by at most 30% between 300 mTorr and 5 Torr, which is considered to be the practical range. Therefore, the injected power volume density is the best indicator to characterize LTE discharge.

When we look at the current plasma CVD systems, we cannot find any that have an injected power volume density of more than 0.1 W/cm ^{3 ,} even if they are large devices with a large discharge space.
This is because the idea of using LTE discharge as in the present invention was completely lost. When the quartz tube has a small diameter, as shown in FIG. 6, the ratio of the injected power to the device of the present invention is several tens to hundreds of times higher.

On the other hand, the DE curve in FIG. Graph of opening area] (experimental value)
This is what is shown. While both the A-B and C-B curves decrease rapidly as the inner diameter of the quartz tube increases, the D-E
The curve remains almost constant even if the inner diameter of the quartz tube changes.
Shows the value per 2W/ ^cm2 .

This D-E curve was measured for a cylindrical quartz discharge tube, but experiments have shown that the processing speed, such as the film deposition rate on the substrate, is lower when using active species from LTE plasma. The processing speed is roughly related to the following relational expression.

[Processing speed] ∝ [Amount of active species supplied] ∝ [Amount of active species generated] / [Flow rate of active species] ∝ [Amount of radiant light per unit area] / [Flow rate of discharge gas] / [Aperture area] This In the last equation, [flow rate of active species]∝
[Flow rate of discharge gas]/[Opening area] is clear.
[Amount of active species produced] ∝ [Amount of emitted light per unit area] will be supplemented with a supplementary explanation.

As an example, the emission from nitrogen LTE plasmas is often 120.0 nm (N3s ⁴ P→
2p ⁴ S), 149.3nm (N3s ^2P →2p ^2D ), 174.4nm
The emission intensity from (N3s ² P→2p ² P) becomes much stronger compared to the normal emission intensity of N ₂ . Inside the plasma, luminescent species are generated with an almost constant probability mainly due to electron collisions, and each luminescent species is deactivated with an almost constant probability.

In addition, in the case of nitrogen, the amount of N atoms generated inside the LTE plasma is large, and the emission intensity of N atoms increases.
It is sufficiently large compared to the emission intensity of N ₂ molecules (approximately 100
Figures 3 and 4. Therefore, by measuring the amount of emitted light per unit area, it is possible to know the concentration of active species (N atoms) present on the aperture surface.
That is, the [amount of active species produced] is approximately proportional to the [amount of emitted light per unit area].

The same applies to hydrogen LTE plasma and other gas LTE plasmas.

In this way, not only when only light is used, but also when only active species are used, the processing speed is expressed by the amount of emitted light per unit area, and the graph is the same as the DE curve in FIG. 5.

Even when the discharge space is not cylindrical, the [opening area of the discharge space toward the substrate to be processed] can be interpreted literally, and the area can be measured and used for calculation. Note that the mesh electrode 30 may be present between the discharge space 60 and the substrate 16 to be processed, and the mesh electrode 30 may be partially blocked, or there may be an excessively long path between the discharge space 60 and the substrate 16 to be processed, and the active species may be wasted and strongly lost. When the power is increased, the injected power should be increased accordingly.

The flow rate of active species also poses a problem, but in normal cases, the flow rate of active species is almost uniquely determined in order to maintain uniformity of treatment, and only the amount of generated active species needs to be considered.

In conventional plasma CVD devices, the injected power area density has a high value in a rather small device with a quartz tube having an inner diameter of 5 cm or less. For large devices, this value gradually decreases to less than 1/10.

Therefore, the device of the present invention can also be characterized using this injected power areal density.

Although the apparatus of the present invention has been described above exclusively for the production of SiN films, the apparatus of the present invention has many possibilities, such as a-Si:H films, in addition to the production of high-quality SiN films.

The embodiments described above have mainly focused on film formation. However, the surface can be etched by using an active gas such as chlorine or fluorine. Furthermore, the surface can also be modified, such as by oxidizing the surface using an oxygen-based gas or nitriding the surface using a nitrogen-based gas. These film formation, etching, and surface modification can of course be applied not only to the field of inorganic materials but also to the field of organic materials.

Needless to say, the above does not have any limited meaning and many variations are possible. For example, the present invention can be implemented by combining various conventionally known techniques, such as a plasma generation method using a hot cathode that does not easily react with the active species used. For example, mesh electrode 3
By conservatively applying the charged particle blocking voltage to 0,
When the glow discharge plasma is extended onto the substrate to be processed, it is possible to greatly increase the processing speed, although impact damage is increased.

This method can be used to great effect depending on the application.

On the other hand, when looking at existing plasma CVD devices, it is impossible to find any device with an injected power areal density of 0.2 W/cm ^{2 or} more.

(f) Effects of the invention The present invention stably produces highly pure and powerful active species useful for surface treatment, and by using this, industrially usable species can be produced at a sufficient rate and in high quality. We can provide effective surface treatment and its equipment.

[Brief explanation of the drawing]

FIG. 1 and FIGS. 6 and 7 are front sectional views of a device used to implement an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the injection power and the emission intensity of hydrogen LTE discharge. FIG. 3 is a graph showing the results of vacuum ultraviolet emission spectroscopy from LTE plasma, and FIG. 4 is a graph showing the results of vacuum ultraviolet emission spectroscopy from glow plasma. FIG. 5 is a graph of the implanted power deposition density and the implanted power areal density during SiN film formation. 3, 3... LTE plasma, 7... Reaction vessel,
10, 10'...discharge chamber, 16...substrate to be treated,
17... Synchrotron radiation, 18... Active species, 20... Reaction chamber, 30, 30'... Mesh-shaped electrode, 60...
Space for discharge.

Claims (1)

[Claims] 1 LTE discharge is generated by introducing a predetermined gas into a space to which alternating power is applied;
The active species generated by the plasma of LTE discharge,
A surface treatment method characterized in that a predetermined treatment is performed on the surface of a base by guiding the base to the surface of the base placed outside the LTE discharge. 2. A reaction chamber that accommodates a substrate to be processed, an alternating power source, and a discharge chamber provided with a discharge space to which alternating power of the power source is applied by inductive coupling, capacitive coupling, or cavity resonance; and the discharge space. A surface treatment apparatus comprising: means for introducing a predetermined gas into the discharge space; and irradiation means for guiding active species generated in the discharge plasma in the discharge space to the surface of the substrate to be treated in the reaction chamber, The power source is LTE in the discharge space.
It has a power capacity large enough to generate a discharge, and the value obtained by dividing [the power capacity of the alternating power source] by [the opening area where the discharge space opens toward the base body] is 2 W/cm ² or more. A surface treatment device characterized by: 3. The surface treatment apparatus according to claim 2, wherein the irradiation means includes a loaded particle adjustment means for prohibiting, restricting, or promoting transmission of charged particles. 4. The surface treatment apparatus according to claim 3, wherein the charged particle adjusting means includes a mesh-like electrode as a component. 5. The surface treatment apparatus according to claim 3, wherein the charged particle adjusting means comprises a magnetic field. 6. The surface treatment apparatus according to claim 2 or 3, wherein a plurality of the discharge spaces are provided for a single substrate to be treated. 7. The surface treatment apparatus according to claim 6, wherein the gas introduced into each of the plurality of discharge spaces is of a different type. 8. The gas introduced into one of the plurality of discharge spaces includes _N2 , the gas introduced into the other one contains _H2 , and the gas is introduced into the reaction chamber via the discharge space. 8. The surface treatment apparatus according to claim 7, wherein a gas containing monosilane, disilane, a silane derivative, or a mixture thereof is introduced to deposit a SiN film on the surface of the substrate.