JPH0556019B2 - - Google Patents

Info

Publication number
JPH0556019B2
JPH0556019B2 JP58243533A JP24353383A JPH0556019B2 JP H0556019 B2 JPH0556019 B2 JP H0556019B2 JP 58243533 A JP58243533 A JP 58243533A JP 24353383 A JP24353383 A JP 24353383A JP H0556019 B2 JPH0556019 B2 JP H0556019B2
Authority
JP
Japan
Prior art keywords
transistor
layer
vertical transistor
collector
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58243533A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136249A (ja
Inventor
Hiroshi Tanimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58243533A priority Critical patent/JPS60136249A/ja
Publication of JPS60136249A publication Critical patent/JPS60136249A/ja
Publication of JPH0556019B2 publication Critical patent/JPH0556019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP58243533A 1983-12-23 1983-12-23 半導体装置 Granted JPS60136249A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243533A JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243533A JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS60136249A JPS60136249A (ja) 1985-07-19
JPH0556019B2 true JPH0556019B2 (enrdf_load_html_response) 1993-08-18

Family

ID=17105304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243533A Granted JPS60136249A (ja) 1983-12-23 1983-12-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS60136249A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1186377B (it) * 1985-11-20 1987-11-26 Sgs Microelettronica Spa Dispositivo per minimizzare le capacita' parassite di giunzione di un transistor pnp verticale a collettore isolato
IT1190074B (it) * 1986-02-28 1988-02-10 Sgs Microelettronica Spa Amplificatore a banda larga comprendente un dispositivo circuitale per migliorare la risposta in frequenza

Also Published As

Publication number Publication date
JPS60136249A (ja) 1985-07-19

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