JPH0553115A - Ferroelectric liquid crystal display element - Google Patents

Ferroelectric liquid crystal display element

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Publication number
JPH0553115A
JPH0553115A JP21741091A JP21741091A JPH0553115A JP H0553115 A JPH0553115 A JP H0553115A JP 21741091 A JP21741091 A JP 21741091A JP 21741091 A JP21741091 A JP 21741091A JP H0553115 A JPH0553115 A JP H0553115A
Authority
JP
Japan
Prior art keywords
liquid crystal
inorg
dielectric constant
oriented films
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21741091A
Other languages
Japanese (ja)
Inventor
Shunsuke Kobayashi
駿介 小林
Shozo Takeno
尚三 武野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Priority to JP21741091A priority Critical patent/JPH0553115A/en
Publication of JPH0553115A publication Critical patent/JPH0553115A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a stable memory characteristic and responsiveness by constituting oriented layers holding a liquid crystal layer of inorg. oriented films obtd. by diagonal vapor deposition of inorg. matter having a prescribed dielectric constant, such as aluminum nitride. CONSTITUTION:The oriented films 2, 2' are constituted of the inorg. oriented films obtd. by the diagonal vapor deposition of the inorg. matter having 7 to 15, more preferably 8 to 10 dielectric constant. Namely, a degradation in the memory characteristic of the liquid crystal, a malfunction, etc., arise if the dielectric constant of the inorg. matter constituting the oriented films 2, 2' is smaller than 7. A short circuiting arises between the oriented films 2 and 2' facing each other on both sides of the liquid crystal at the time of voltage impression if the dielectric constant is larger than 15. Not only the driving of the liquid crystal is then affected but also a failure in driving equipment is resulted. Then, the good memory characteristic is obtd. by constituting the oriented films 2, 2' of the inorg. oriented films obtd. by the diagonal vapor deposition of the inorg. matter having 7 to 15 dielectric constant at 1MHz. In addition, the malfunctions are eliminated and the excellent characteristics to exhibit the good responsiveness are obtd.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、新規な強誘電液晶表示
素子に関する。詳しくは、安定したメモリー性及び応答
性を有する強誘電液晶表示素子を提供するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel ferroelectric liquid crystal display device. More specifically, the present invention provides a ferroelectric liquid crystal display device having a stable memory property and responsiveness.

【0002】[0002]

【従来の技術】近年、液晶表示素子において、表示面積
の大型化、作動の高速化を目指しての開発が行われるよ
うになってきた。ところが、画像表示時における透明電
極のリード抵抗により駆動電圧の低下が生じ、該液晶表
示素子の大型化の障壁となっていた。かかる問題に対し
て、画像表示時においてメモリー性を有する強誘電液晶
表示素子が注目されている。この強誘電液晶表示素子
は、液晶として双安定性を有するものを使用することに
より、メモリー性を与え、デューティ比を小さくしても
駆動できるようにして大型化を可能にするものである。
上記強誘電液晶表示素子は、一般に、液晶層を挟んで配
向膜、電極層及び透明絶縁基板をそれぞれ順次積層して
構成されている。
2. Description of the Related Art In recent years, liquid crystal display devices have been developed for the purpose of increasing the display area and increasing the operation speed. However, the drive resistance is reduced due to the lead resistance of the transparent electrode during image display, which has been a barrier to the increase in size of the liquid crystal display element. With respect to such a problem, a ferroelectric liquid crystal display element having a memory property at the time of displaying an image has attracted attention. This ferroelectric liquid crystal display element provides a memory property by using a liquid crystal having bistability, and can be driven even if the duty ratio is small, thereby enabling an increase in size.
The above-mentioned ferroelectric liquid crystal display element is generally constructed by sequentially laminating an alignment film, an electrode layer and a transparent insulating substrate with a liquid crystal layer interposed therebetween.

【0003】上記の強誘電液晶においては、ムラのない
表示を実現するため、表示素子の全面にわたって液晶の
均一な配向状態を得ることが要求され、そのためには、
統一された配向性、厚み等を有する配向膜の形成が必要
である。
In the above ferroelectric liquid crystal, in order to realize uniform display, it is required to obtain a uniform alignment state of the liquid crystal over the entire surface of the display element.
It is necessary to form an alignment film having uniform alignment and thickness.

【0004】従来、かかる配向膜としては、シリカ(S
iO2)の斜方蒸着膜が知られてい
Conventionally, silica (S
An orthorhombic vapor deposited film of iO 2 ) is known.

【0005】る。[0005]

【発明が解決しようとする課題】しかしながら、シリカ
の斜方蒸着膜を配向膜として使用した強誘電液晶表示素
子は、液晶のメモリー性に問題を有する。即ち、シリカ
を斜方蒸着して形成された配向膜は、統一された配向が
得られているにも係わらず、液晶が部分的にメモリー性
を失ったり、誤作動する場合があった。従って、シリカ
の配向膜は、良好な形状は得られるものの、実用化にお
いては問題を有していた。
However, the ferroelectric liquid crystal display device using the oblique vapor deposition film of silica as the alignment film has a problem in the memory property of the liquid crystal. That is, in the alignment film formed by obliquely depositing silica, the liquid crystal may partially lose the memory property or malfunction even though the uniform alignment is obtained. Therefore, although the silica alignment film can obtain a good shape, it has a problem in practical use.

【0006】[0006]

【課題を解決するための手段】本発明者は、上記問題を
解決すべく、研究を重ねた結果、配向膜として特定の誘
電率を有する無機物を電極表面に斜方蒸着して得られる
配向膜を使用することにより、強誘電液晶分子をある所
望の角度のプレチルト角をもって配列せしめることがで
きると共に、該特定の誘電率を有する無機物の作用によ
り、シリカの斜方蒸着膜を使用した場合にみられる、液
晶が部分的にメモリー性を失ったり、誤作動する現象を
ほぼ完全に防止することができることを見い出し本発明
を完成するに至った。
The inventors of the present invention have conducted extensive research to solve the above problems, and as a result, an alignment film obtained by obliquely vapor-depositing an inorganic material having a specific dielectric constant as an alignment film on the electrode surface. By using, it is possible to arrange the ferroelectric liquid crystal molecules with a pretilt angle of a desired angle, and due to the action of the inorganic substance having the specific dielectric constant, it is only possible to use the oblique deposition film of silica. The inventors have found that it is possible to almost completely prevent the phenomenon that the liquid crystal partly loses its memory property or malfunctions, and has completed the present invention.

【0007】本発明は、液晶層を挟む配向膜が、1MH
zにおける誘電率(以下、単に「誘電率」という)7〜
15の無機物を斜方蒸着して得られる無機配向膜により
構成されたことを特徴とする強誘電液晶表示素子であ
る。
According to the present invention, the alignment film sandwiching the liquid crystal layer is 1 MH.
Dielectric constant at z (hereinafter simply referred to as "dielectric constant") 7-
A ferroelectric liquid crystal display device comprising an inorganic alignment film obtained by obliquely depositing 15 inorganic substances.

【0008】本発明の強誘電液晶表示素子において、配
向膜は、誘電率7〜15、好ましくは、8〜10の無機
物を斜方蒸着して得られる無機配向膜により構成され
る。即ち、配向膜を構成する無機物の誘電率が7より小
さい場合は、液晶のメモリー性の低下、誤作動等が生
じ、本発明の目的を達成することができない。また、誘
電率が15より大きい場合は、電圧を印加時に液晶を挟
んで対向する配向膜間で短絡が起こり、液晶駆動に影響
を及ぼすばかりでなく、駆動機器の破損を招く。
In the ferroelectric liquid crystal display device of the present invention, the alignment film is composed of an inorganic alignment film obtained by oblique vapor deposition of an inorganic substance having a dielectric constant of 7 to 15, preferably 8 to 10. That is, when the dielectric constant of the inorganic material forming the alignment film is smaller than 7, the memory property of the liquid crystal is deteriorated, malfunction occurs, and the object of the present invention cannot be achieved. When the dielectric constant is higher than 15, a short circuit occurs between the alignment films facing each other with the liquid crystal sandwiched when a voltage is applied, which not only affects the liquid crystal driving but also damages the driving device.

【0009】上記特定の誘電率を有する無機物は、公知
のものが特に制限なく使用される。例えば、窒化アルミ
ニウム、アルミナ、窒化珪素、ジルコン等が挙げられ
る。そのうち、窒化アルミニウムが膜形成が安定して行
え、薄膜としての信頼性に優れる点で最も好適である。
特に、後記する斜方蒸着において窒化アルミニウム原料
として、酸素及び酸素と結合したアルミニウム以外の不
純物が0.01重量%以下のものが好適である。
As the inorganic material having the above-mentioned specific dielectric constant, known ones can be used without particular limitation. Examples thereof include aluminum nitride, alumina, silicon nitride and zircon. Among them, aluminum nitride is most preferable because it can stably form a film and has excellent reliability as a thin film.
In particular, in the oblique vapor deposition described below, as the aluminum nitride raw material, it is preferable to use oxygen and impurities combined with oxygen other than aluminum as 0.01 wt% or less.

【0010】上記の斜方蒸着によって得られる無機配向
膜は、液晶を挟んで存在するように設けられる。一般に
は、前記電極層の液層側に形成される。配向膜の厚み
は、光学特性に影響を与えないように薄いほど良く、
0.01〜0.1μmが適当である。また、配向膜にお
ける溝の角度は、電極面に対して30゜〜5゜が適当で
ある。
The inorganic alignment film obtained by the above oblique vapor deposition is provided so as to sandwich the liquid crystal. Generally, it is formed on the liquid layer side of the electrode layer. The thickness of the alignment film is better as it is thinner so as not to affect the optical characteristics.
0.01 to 0.1 μm is suitable. Further, the angle of the groove in the alignment film is preferably 30 ° to 5 ° with respect to the electrode surface.

【0011】上記無機配向層を形成する斜方蒸着は、公
知の方法に準じて実施すれば良い。一般に、蒸発源は前
記無機物の粒子を用い、イオンビームを照射することに
よりこれを溶解蒸発させる。蒸着において、ガラス基板
は蒸発ビームに対して所望の角度に傾けて設置すること
により、配向膜が形成される。例えば、電極層の法線か
ら60度の角度で蒸着するとプレチルト角ゼロで、配向
ベクトルが蒸着方向に直角に向いた平行配向構造が得ら
れる。また、法線方向から85度の角度で蒸着すると数
度のプレチルト角を得ることができる。
The oblique vapor deposition for forming the above-mentioned inorganic alignment layer may be carried out according to a known method. Generally, as the evaporation source, the inorganic particles are used, and the particles are dissolved and evaporated by irradiating with an ion beam. In vapor deposition, the glass substrate is installed at a desired angle with respect to the evaporation beam to form an alignment film. For example, if vapor deposition is performed at an angle of 60 degrees from the normal line of the electrode layer, a parallel orientation structure in which the pretilt angle is zero and the orientation vector is orthogonal to the vapor deposition direction is obtained. Further, if the vapor deposition is performed at an angle of 85 degrees from the normal direction, a pretilt angle of several degrees can be obtained.

【0012】上記の蒸着は10-6〜10-5mmTorr
程度の高真空下で行うのが好ましい。
The above vapor deposition is 10 −6 to 10 −5 mmTorr.
It is preferable to carry out under a high vacuum.

【0013】本発明において、他の構成は公知の強誘電
液晶表示素子の構造が特に制限なく採用される。図1
は、強誘電液晶表示素子の代表的な構造を示す概略図で
ある。図に示すように、液晶層1を挟んで無機物の斜方
蒸着膜よりなる配向膜2、2’、電極層3、3’及び透
明絶縁基板4、4’が順次積層されて構成されている。
また、液晶層内には、スペーサー5が設けられ、液晶層
をシールするためにシール材7が設けられる。
In the present invention, the structure of a known ferroelectric liquid crystal display device is adopted as the other structure without particular limitation. Figure 1
FIG. 3 is a schematic view showing a typical structure of a ferroelectric liquid crystal display element. As shown in the figure, the liquid crystal layer 1 is sandwiched between the orientation films 2 and 2 ′, which are oblique vapor deposition films of inorganic materials, the electrode layers 3 and 3 ′, and the transparent insulating substrates 4 and 4 ′, which are sequentially stacked. ..
Further, a spacer 5 is provided in the liquid crystal layer, and a sealing material 7 is provided to seal the liquid crystal layer.

【0014】上記構造の本発明の強誘電液晶表示素子に
おいて、液晶は、公知の強誘電液晶を特に制限なく使用
することができる。例えば、キラルスメクチックC相液
晶等が挙げられる。また、上記強誘電液晶表示素子を挟
んで設けられる配向膜の間隙は、1〜2μmが適当であ
る。また、無機配向膜2、2’が積層される電極層3、
3’の材質は、公知の材質が特に制限なく使用される。
例えば、In23−SnO2(ITO)等の透明導電材
が好適である。
In the ferroelectric liquid crystal display device of the present invention having the above structure, as the liquid crystal, a known ferroelectric liquid crystal can be used without particular limitation. For example, chiral smectic C-phase liquid crystal and the like can be mentioned. Further, the gap between the alignment films provided so as to sandwich the ferroelectric liquid crystal display element is suitably 1 to 2 μm. In addition, an electrode layer 3 on which the inorganic alignment films 2 and 2'are laminated,
As the material of 3 ', a known material is used without particular limitation.
For example, a transparent conductive material such as In 2 O 3 —SnO 2 (ITO) is suitable.

【0015】また、電極層の外側に積層されるガラス基
板4、4’の材質も公知の材質が特に制限されない。例
えば、ソーダライムガラス、無アルカリガラス等が挙げ
られる。尚、上記ガラスの材質がアルカリ溶出性の場
合、電極層の腐食を防止するために、該電極層との間
に、SiO2等のバリア層6、6’を形成することが好
ましい。
The material of the glass substrates 4 and 4'laminated on the outer side of the electrode layer is not particularly limited to a known material. For example, soda lime glass, non-alkali glass and the like can be mentioned. When the glass material is alkali-eluting, it is preferable to form barrier layers 6, 6'of SiO 2 or the like between the glass and the electrode layer in order to prevent corrosion of the electrode layer.

【0016】更に、強誘電液晶層の厚みを均一に維持す
るためのスペーサー5も、公知のものが特に制限なく使
用されるが、シリカ等の無機球状粒子が好適である。
Further, as the spacer 5 for keeping the thickness of the ferroelectric liquid crystal layer uniform, known spacers may be used without particular limitation, but inorganic spherical particles such as silica are preferable.

【0017】[0017]

【効果】本発明の強誘電液晶表示素子は、配向膜を1M
Hzにおける誘電率7〜15の無機物を斜方蒸着して得
られる無機配向膜により構成することにより、良好なメ
モリー性を有し、また、誤作動もなく、しかも、良好な
応答性を発揮するという優れた特性を有する。
[Effect] The ferroelectric liquid crystal display device of the present invention has an alignment film of 1M.
By having an inorganic alignment film obtained by obliquely depositing an inorganic material having a dielectric constant of 7 to 15 at Hz, it has a good memory property, no malfunction, and exhibits good responsiveness. It has excellent characteristics.

【0018】本発明の上記構成によって上記効果が発揮
される作用は明らかではないが、本発明者は、次のよう
に推定している。即ち、上記効果メモリ性、誤作動が、
駆動電圧印加により配向層表面に誘起される分極現象に
よって生じ、かかる分極現象の生じ易さが、特定の誘電
率を有する無機物の性状と斜方蒸着によってもたらされ
る配向膜の形状との相互作用により、極めて効果的に抑
制されることによるものと推定している。
Although it is not clear that the above-mentioned structure of the present invention exerts the above-mentioned effects, the present inventor estimates as follows. That is, the above memory effect and malfunction are
It is caused by the polarization phenomenon induced on the surface of the alignment layer by applying a driving voltage, and the easiness of the polarization phenomenon is caused by the interaction between the property of the inorganic material having a specific dielectric constant and the shape of the alignment film brought about by the oblique deposition. It is estimated that this is due to the extremely effective suppression.

【0019】[0019]

【実施例】以下、本発明を更に具体的に説明するため、
実施例を示すが、本発明は、これらの実施例に限定され
るものではない。
EXAMPLES In order to more specifically describe the present invention,
Examples are shown, but the present invention is not limited to these examples.

【0020】尚、実施例及び比較例において、各種試験
は下記の方法によって実施した。
In the examples and comparative examples, various tests were carried out by the following methods.

【0021】(1)メモリー性 液晶表示素子に電圧を印加して画像表示を行った後、電
圧の印加を反転し、画像表示に異常が現れるかどうかを
観察した。
(1) Memory property After a voltage was applied to the liquid crystal display element to display an image, the application of the voltage was reversed, and it was observed whether or not abnormality appeared in the image display.

【0022】(2)応答性 液晶表示素子に電圧を印加した後、それを反転したとき
の分極反転電流によりその応答性を示した。
(2) Responsiveness The responsiveness was shown by the polarization reversal current when a voltage was applied to the liquid crystal display element and then reversed.

【0023】実施例1、比較例1 透明絶縁基板4、4’のガラス基板上に、これらを対向
して積層したときに格子状にクロスする配線パターンを
ITOにより形成して電極層3、3’を積層した。次い
で、上記電極層の面上に配向膜の材料として、1MHz
における誘電率が()内の値を示すTa25(ε1=2
5)、SiO2(ε1=2)Al23(ε1=6)AlN
(ε1=9)を用い、蒸着角度を基板法線より85゜、
真空度10-6mmTorrで5分間斜方蒸着を行い、表
1に示す厚みの斜方蒸着層よりなる配向膜2、2’を積
層した。また、液晶として、キラルスメクチックC相液
晶(誘電率=2)を使用し、配向膜間には、直径1.5
μmの球状シリカ粒子を10個/mm2の散布密度で存
在させ、周囲をシール材でシールされた図1の構造の液
晶セルを作成した。なお、液晶表示装置としては、パネ
ルの上下に1枚ずつの偏光板をクロスニコルに配置し
た。
Example 1, Comparative Example 1 On the glass substrates of the transparent insulating substrates 4 and 4 ′, wiring patterns that cross in a grid pattern when they were laminated facing each other were formed of ITO to form the electrode layers 3 and 3. 'Stacked. Then, as a material for the alignment film on the surface of the electrode layer, 1 MHz
Ta 2 O 51 = 2 with dielectric constant in ()
5), SiO 21 = 2) Al 2 O 31 = 6) AlN
1 = 9), the deposition angle is 85 ° from the substrate normal,
Oblique vapor deposition was performed at a vacuum degree of 10 −6 mmTorr for 5 minutes, and orientation films 2 and 2 ′ each having an oblique vapor deposition layer having a thickness shown in Table 1 were laminated. As the liquid crystal, a chiral smectic C-phase liquid crystal (dielectric constant = 2) is used, and the diameter between the alignment films is 1.5.
A liquid crystal cell having the structure of FIG. 1 was prepared in which spherical silica particles of μm were present at a dispersion density of 10 particles / mm 2 and the periphery was sealed with a sealing material. In the liquid crystal display device, one polarizing plate is arranged on each of the upper and lower sides of the panel in crossed Nicols.

【0024】上記強誘電液晶表示素子についての各種試
験結果を表1に示す。
Table 1 shows various test results of the above ferroelectric liquid crystal display device.

【0025】[0025]

【表1】 [Table 1]

【0026】Ta25の配向膜を用いたサンプルにおい
ては、短絡が発生し、正常な動作は不能となった。誘電
率が大き過ぎたためと思われる。SiO2の配向膜を用
いたサンプルは、大きな分極反転電流が観測され、メモ
リ性が損なわれる現象が見られた。AlNが最も正常な
チャージ電流のみが観測され、メモリ性も安定であっ
た。Al23の配向膜のサンプルはほぼ正常な動作が得
られたが、メモリ安定性に欠けた。 実施例2、3 実施例1において、配向膜を形成する無機物を表2に示
す材質に変え、厚みを表2に示す厚みとした以外は、同
様にして強誘電液晶表示素子を作成した。
In the sample using the Ta 2 O 5 alignment film, a short circuit occurred and normal operation was impossible. It seems that the permittivity was too high. In the sample using the SiO 2 alignment film, a large polarization reversal current was observed, and the phenomenon of impairing the memory property was observed. Only the most normal charge current of AlN was observed, and the memory property was stable. The Al 2 O 3 alignment film sample obtained almost normal operation, but lacked memory stability. Examples 2 and 3 Ferroelectric liquid crystal display elements were produced in the same manner as in Example 1, except that the inorganic material forming the alignment film was changed to the material shown in Table 2 and the thickness was changed to the thickness shown in Table 2.

【0027】上記強誘電液晶表示素子についての各種試
験結果を表2に示す。
Table 2 shows the results of various tests on the above ferroelectric liquid crystal display device.

【0028】[0028]

【表2】 [Table 2]

【図面の簡単な説明】[Brief description of drawings]

【図1】強誘電液晶表示素子の代表的な構造を示す概略
図である。
FIG. 1 is a schematic view showing a typical structure of a ferroelectric liquid crystal display element.

【符号の簡単な説明】[Simple explanation of symbols]

1 液晶層 2、2’ 配向膜 3、3’ 電極層 4、4’ 透明絶縁基板 5 スペーサー 7 シール材 1 liquid crystal layer 2, 2'alignment film 3, 3'electrode layer 4, 4'transparent insulating substrate 5 spacer 7 sealant

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】液晶層を挟む配向膜が、1MHzにおける
誘電率7〜15の無機物を斜方蒸着して得られる無機配
向膜により構成されたことを特徴とする強誘電液晶表示
素子。
1. A ferroelectric liquid crystal display device characterized in that an alignment film sandwiching a liquid crystal layer is composed of an inorganic alignment film obtained by oblique vapor deposition of an inorganic material having a dielectric constant of 7 to 15 at 1 MHz.
JP21741091A 1991-08-28 1991-08-28 Ferroelectric liquid crystal display element Pending JPH0553115A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21741091A JPH0553115A (en) 1991-08-28 1991-08-28 Ferroelectric liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21741091A JPH0553115A (en) 1991-08-28 1991-08-28 Ferroelectric liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH0553115A true JPH0553115A (en) 1993-03-05

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JP21741091A Pending JPH0553115A (en) 1991-08-28 1991-08-28 Ferroelectric liquid crystal display element

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Country Link
JP (1) JPH0553115A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017485A (en) * 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
JP2006184672A (en) * 2004-12-28 2006-07-13 Seiko Epson Corp Liquid crystal device and projection type display device
JP2007155950A (en) * 2005-12-02 2007-06-21 Seiko Epson Corp Liquid crystal device, manufacturing method of same, and projector
WO2013154074A1 (en) 2012-04-12 2013-10-17 株式会社 東芝 X-ray tube

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017485A (en) * 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
JP2006184672A (en) * 2004-12-28 2006-07-13 Seiko Epson Corp Liquid crystal device and projection type display device
JP2007155950A (en) * 2005-12-02 2007-06-21 Seiko Epson Corp Liquid crystal device, manufacturing method of same, and projector
JP4736759B2 (en) * 2005-12-02 2011-07-27 セイコーエプソン株式会社 Liquid crystal device, method for manufacturing liquid crystal device, and projector
WO2013154074A1 (en) 2012-04-12 2013-10-17 株式会社 東芝 X-ray tube

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