JPH0551736A - Sputtering device - Google Patents

Abstract

PURPOSE:To uniformize the consumption of a target at the time of sputtering by moving a magnet so that the target is uniformly consumed over the entire surface. CONSTITUTION:A body 6 to be worked and a target 4 with a fitted cathode are housed in a vacuum chamber 1 and an ionized inert gas 2 is introduced into the chamber 1. A magnet 3 is fitted to the target 4 and made freely movable. At the time of sputtering, the magnet 3 is moved so that the target 4 is uniformly consumed over the entire surface. The service life of the target can be prolonged.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a base metal thin film for forming metal wiring when manufacturing a multilayer wiring ceramic substrate.

[0002]

2. Description of the Related Art FIG. 3 is a diagram showing a state of consumption of a target in an example of a conventional sputtering apparatus, (a) is a plan view,
(B) is a BB line sectional view.

When manufacturing a multilayer wiring ceramic substrate,
A conventional sputtering apparatus for forming a thin film of a base metal for forming a metal wiring introduces an ionized inert gas into a vacuum chamber, and the ionized inert gas is applied to a target by a magnet attached to the target. By sucking and colliding, the metal particles forming the target are ejected from the target and deposited on the work (sputtering target) to form a metal film.

[0004]

As described above, in the conventional sputtering apparatus, the ionized inert gas is made to collide with the target so that the metal particles constituting the target are ejected from the target to be processed. Although it is configured to form a metal film on the object, when ejecting metal particles from the target, the magnet attached to the target is fixed, so that the part where the inert gas collides with the target is constant. Focus on the place. For this reason, as shown in FIG. 3, the wear state in the target 14 is not uniform, and only a specific portion (the wear portion 14a) is worn out, resulting in a short target life. .

[0005]

The sputtering apparatus of the present invention includes a vacuum chamber for accommodating an object to be processed and a target having a cathode attached thereto and introducing an ionized inert gas, and the sputtering chamber being freely attached to the target. A movable magnet is provided, and the magnet is moved so that the target is consumed all over when sputtering.

[0006]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a view showing the consumption state of a target in the embodiment of FIG. 1, (a) is a plan view, and (b) is a line AA. FIG.

In this embodiment, as shown in FIG. 1, a target 4 having a sputtering target (working target) 6 and a cathode is attached.
Introducing ionized inert gas (inert gas ions) 2 into a vacuum chamber 1 accommodating and, and attracting and colliding the inert gas ions 2 with a magnet 3 attached to the target 4. Thus, the metal particles (metal particles) 5 forming the target 4 are ejected from the target 4 and adhered to the workpiece 6 to form a metal film. The magnet 3 attached to the target 4 can be freely moved. At this time, the magnet 3 is moved so that the inert gas ions 2 do not concentrate and collide with the target 4 at a certain place. The target 4 is made to collide with the entire surface on average.

As a result, as shown in FIG. 2, the target 4 is not consumed in a concentrated manner only in a specific portion, and is consumed by being averaged over the entire surface (consumed portion 4).
a).

[0010]

As described above, in the sputtering apparatus of the present invention, the magnet attached to the target is allowed to move freely, and during sputtering, the target is entirely consumed on average. Thus, there is an effect that the consumption of the target can be averaged, and thus the life of the target can be extended.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

2A and 2B are diagrams showing a target consumption state in the embodiment of FIG. 1, in which FIG. 2A is a plan view and FIG. 2B is a sectional view taken along the line AA.

3A and 3B are diagrams showing a target consumption state in an example of a conventional sputtering apparatus, in which FIG. 3A is a plan view and FIG.
It is a B line sectional view.

[Explanation of symbols]

 1 Vacuum Chamber 2 Inert Gas Ion 3 Magnet 4 Target 4a Consumable Part 5 Metal Particle 6 Workpiece 14 Target 14a Consumable Part

Claims (1)

[Claims] 1. When performing sputtering, a vacuum chamber accommodating a workpiece and a target to which a cathode is attached and introducing an ionized inert gas, and a magnet attached to the target and capable of moving freely are used. The sputtering apparatus, wherein the magnet is moved so that the target is consumed all over the surface evenly.