JPH0550857B2 - - Google Patents
Info
- Publication number
- JPH0550857B2 JPH0550857B2 JP60036200A JP3620085A JPH0550857B2 JP H0550857 B2 JPH0550857 B2 JP H0550857B2 JP 60036200 A JP60036200 A JP 60036200A JP 3620085 A JP3620085 A JP 3620085A JP H0550857 B2 JPH0550857 B2 JP H0550857B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- type
- semiconductor film
- ray
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010408 film Substances 0.000 description 28
- 230000005855 radiation Effects 0.000 description 12
- 230000005284 excitation Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
- G01T1/362—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with scintillation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60036200A JPS61196572A (ja) | 1985-02-25 | 1985-02-25 | アモルフアスシリコンｘ線センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60036200A JPS61196572A (ja) | 1985-02-25 | 1985-02-25 | アモルフアスシリコンｘ線センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61196572A JPS61196572A (ja) | 1986-08-30 |
| JPH0550857B2 true JPH0550857B2 (US20070167544A1-20070719-C00007.png) | 1993-07-30 |
Family
ID=12463090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60036200A Granted JPS61196572A (ja) | 1985-02-25 | 1985-02-25 | アモルフアスシリコンｘ線センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61196572A (US20070167544A1-20070719-C00007.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243780A (ja) * | 1987-03-30 | 1988-10-11 | Kanegafuchi Chem Ind Co Ltd | Ｘ線検出装置 |
| IL96561A0 (en) * | 1989-12-28 | 1991-09-16 | Minnesota Mining & Mfg | Amorphous silicon sensor |
| CA2034118A1 (en) * | 1990-02-09 | 1991-08-10 | Nang Tri Tran | Solid state radiation detector |
| NL1003390C2 (nl) * | 1996-06-21 | 1997-12-23 | Univ Delft Tech | Vlakke stralingssensor en werkwijze voor haar vervaardiging. |
| JP3828982B2 (ja) * | 1997-04-14 | 2006-10-04 | 三菱電機株式会社 | 半導体受光素子 |
| DE10217426B4 (de) * | 2002-04-18 | 2006-09-14 | Forschungszentrum Jülich GmbH | Ortsauflösender Detektor für die Messung elektrisch geladener Teilchen und Verwendung des Detektors |
| JP4894921B2 (ja) * | 2007-05-24 | 2012-03-14 | コニカミノルタホールディングス株式会社 | 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169382A (US20070167544A1-20070719-C00007.png) * | 1974-12-13 | 1976-06-15 | Hitachi Ltd | |
| JPS59154082A (ja) * | 1983-02-22 | 1984-09-03 | Oki Electric Ind Co Ltd | 光センサ |
| JPS59182561A (ja) * | 1983-03-31 | 1984-10-17 | Mitsubishi Electric Corp | 半導体イメ−ジセンサ |
-
1985
- 1985-02-25 JP JP60036200A patent/JPS61196572A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169382A (US20070167544A1-20070719-C00007.png) * | 1974-12-13 | 1976-06-15 | Hitachi Ltd | |
| JPS59154082A (ja) * | 1983-02-22 | 1984-09-03 | Oki Electric Ind Co Ltd | 光センサ |
| JPS59182561A (ja) * | 1983-03-31 | 1984-10-17 | Mitsubishi Electric Corp | 半導体イメ−ジセンサ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61196572A (ja) | 1986-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |