JPH05505466A - TR module with error correction - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] TR module with error correction technical field The present invention relates to an electronic management and control device for radar equipment, and in particular to a phased array. A transmitter/receiver module with operating modes directed to some desired characteristics of the radar device. provided.

Among the available operating modes are antenna command mode, receive mode, and transmit mode. , receive calibration mode, BIT/FIT mode, and transmit calibration mode. Ella – Corrections can be made both open-loop and closed-loop to compensate for deviations from desired performance. It will be held in

Conventional technology Airborne remote targets that require an active phase to avoid detection The use of radar antennas in types of systems designed to accurately determine the location of In applications, it is very important that the radar antenna performs exactly as intended. be. Control of the antenna and processing of signals transmitted and received by the antenna is an electronic, electrical, or electromechanical device that has very tight operating tolerances. Partially done by Antenna control equipment performance and its associated radar Improving data performance remains a goal.

A new system controlled by rapid scanning of the environment via active aperture array radar. One component of a type of radar controller is generally a transmitter/receiver module (T/R module). It is called. The use of new equipment with T/R modules is similar to that of traditional machines. Overcoming the severe technical problems that limit the performance of scanning radar devices. antenna rotation Mechanical scanning is a method of scanning signals transmitted (and received) by a stationary antenna array. omitted by electronic phase shift. Separate information associated with each element of the antenna array By providing a T/R module, very rapid direction changes can be achieved by This is done on the beam without any physical rotation of the structure. This ultra-quick beam direction Aiming is enabled by precise electronic control of the phase of the signal at each antenna element .

The overall operation of an electronically scanned antenna is to transmit signals and The signal is divided into multiple signal paths, each associated with an element of the ray, and transmitted through these signal paths. , as required for the transmitted signal to form a beam directed in the desired direction. In order to guide the signal to each element of the antenna array with the signal phase at each element changed to There are two. In receive mode, the phased array antenna system also directionality, which adjusts the phase of the signal received at each element of the array. The signal from the desired direction is additive and the signal from the other direction is The signals from both sides do not have a proper phase relationship, so they tend to cancel each other out when added. be. This is achieved by providing a phase shift device in the signal receiving path from each element. The “in-phase” signals are combined by a power combiner to obtain signals received from different directions. This is done by combining the

In addition to improved control with beam direction aiming, the T/R module provides low noise amplification (preamplifier) at the front end of the receiver. , transmission from antenna to common radar preamplifier without T/R module By eliminating losses, radar sensitivity can be improved. Another improvement is the system The application of power gain at each element is performed using the integrated Avoiding losses associated with feed power splitters.

The phase shift function is well known in similar technologies to phased array radar systems. can be performed by any technology that has been Various phase shifting techniques Examples include U.S. Pat. No. 4,044,360 and Merrill I, 5ko "Radar Handbook" by Mr. Inik (McGraw-Hill, 1970) ) is disclosed in the textbook entitled. Radar to obtain phased array radar The use of phase shifting devices in applications is well known. Phased Aryle An example of a 1975 ``direction error'' is in U.S. Pat. No. 3,990,077. 〇J Standard Electrical Scanning Antenna”.

The need to provide the same signal to each antenna element is phase shifted relative to each other. Even though it gave a challenging phase shift matching problem. Traditionally used one This type of device is known as a space-fed phased array radar.

With this method, the signal is radiated from the horn onto the back of the panel of the array. Can be done. An array of apertures in the panel receives a portion of the radiated signal and is programmed in advance. It is suitable for use with feed-through type elements that perform a phase shift and radiate the signal again. are combined. Programming the phase shift of each feedthrough radiator element is the control mechanism for beam pointing. This method accurately delivers the signal to each radiating element. The complexity of the hardware required to This represents a significant improvement over the feed device. U.S. Patent No. 4,044,360 The specification explains the advantages of SpaceFeed with respect to integrated feed devices. There is.

The use of phase shifting devices for control by beam pointing was introduced in the 1973 Disclosed in U.S. Pat. No. 3,864,689 “Hybrid Scanning Antenna” , in which case the multiple waveguide antenna section simulates a single long section. used for. In 1978, conventional complex integrated feed phased A system that simplifies array antenna systems is disclosed in U.S. Patent No. 4.257.050. Specification: “Large Element Antenna Array with Grouped Overlapping Apertures” For example, a scanning width of 40 beams requires eight phase shifters and and can be achieved by the use of only 8 small position switchers. number G Semiconductor-based phase shift devices suitable for operation at frequencies of Hz/S are 1982 U.S. Pat. No. 4.450.372 “Long Gate Field Effect Trans electronically controlled variable phase shift devices with registers and using such devices Another method of phase shifting is disclosed in 1982 U.S. Patent No. 4. No. 480.254 "Electron Beam Steering Method and Apparatus", Dielectric prism or dielectric prism that shifts phase depending on the electric field strength to which it is exposed. The use of is explained.

1980 U.S. Pat. No. 4.359.742 “Dual Switch Multiple Mode Door” Radar antenna is a radar antenna system that can operate in both transmit and receive modes. The stem is disclosed. U.S. Patent No. 4.376, 281, dated 1980 In the book “Multimode Array Antennas”, the antennas are designed for both transmitting and receiving operations. Another radar antenna system is disclosed.

In the above-mentioned U.S. Pat. No. 4,450,372, separate locations are provided for each antenna element. A transmit/receive radar system using a phase shift device is disclosed. T/Rs The switch is shown with intervening transmit and receive channel circuitry. each ante Antenna aiming, i.e., beam pointing, within the T/R module for each element. Phase shift elements are provided on both the transmit and receive channels to There is. A separate control circuit is used to provide control signals for directional control. Ru.

FIG. 1 shows a typical example where the terminal 101 receives the transmit drive signal and the antenna receives the signal. 1 shows a typical conventional antenna device. The phase shift device 103 is connected to the phase control line 10 42 to 104d receive the phase control signal and the incoming or outgoing signal provides an appropriately phased signal in response to reception of the signal. Phase control is phase door Adjust the beam direction of the ray antenna. The T/R switch 105 is a phase shift device. Either the transmission path 106 or the reception path 108 between the antenna element 103 and the antenna element 110 Select transmit or receive operation by connecting the The power amplifier 107 Amplifies the signal transmitted when in transmit mode, that is, when the transmission path is in the circuit. , while the device amplifier 109 is used when the system operates in receive mode and the receive path is in the circuit. When amplifying the received signal.

The device of Figure 1 achieves full performance due to tight tolerances that must be met for performance improvements. restricted in the body. For example, when 60 dB of sidelobe suppression is desired, 0.5 dB RMS amplitude and 5° RMS phase tracking is required. 75dB If sidelobe suppression is required, system requirements are tightened. this is like that is satisfied if tight tolerances can be met. however, Even a tolerance for sidelobe performance of 60 dB forces existing technology capabilities . In addition, traditional T/R modules suffer from temperature fluctuations, power supply changes, and duty cycles. , and are exposed to pulse width changes and frequency changes in normal operation.

These effects result in large phase and amplitude variations in each module, leading to poor Resulting in weak tracking and sidelobe performance.

A phase correction circuit for a phase shift device is described in U.S. Pat. No. 4.649.553 “My This microphone The radio wave digital diode phase shift device uses a digital correction method. improved phase error and improved carrier and spurious sideband suppression give. It also works by using a GaAs amplifier that operates at saturation. Reduce amplitude modulation errors.

Disclosure of the invention In the present invention, the C-band transmitter/receiver module is, for example, an active aperture radar. A multifunctional self-aligning game developed by ITT Gallium Arsenide Technology Center using a gallium arsenide monolithic chip manufactured by the gallium arsenide method (MSAG). It will be established. Each module has (1) 5 digital bits and 5 analog bits. (2) a 6-bit programmable phase shifter using (3) low noise preamplifier, (4) driver, and (5) power output. Contains five GaAs chip packages consisting of an amplifier plus T/R switch.

Power regulators and controls, both on thick film substrates, are completely independent for control It is set in.

Close phase and amplitude tracking with respect to temperature, power supply variations, operating bandwidth, and phase conditions. This is accomplished using built-in correction and adjustment circuitry.

In a second embodiment, the devices are arranged differently on the four chips and the pre-driver power amplifiers, drivers, and power amplifiers. The bias of these three amplifiers is switched off from the power demand and thermal Connected so that it can be switched to reduce dissipation. This is a lot This is particularly advantageous since several T/R modules are required for phased array radars. be. B class amplification can be used to increase efficiency.

Both open-loop and closed-loop solutions are used to overcome the limitations encountered with traditional methods. Corrections for both phase and amplitude are used. Open-loop correction is a phase shift device. Compensates for phase shift and amplitude errors for all phase states of the Compensates for variations in bandwidth and operating temperature range. Module gain and phase are Provides both receive and transmit gain and phase within 5° of reference, all within 0.5 dB. It is pre-calibrated to The quality of the open-loop correction circuit depends on the state of GAS technology. It is designed to be as good as possible by using the feedback circuit The device performance is very uniform due to the use of GaAs elements and matched GaAs elements. can be obtained by tight quality control in the selection of s equipment.

Closed-loop correction provides low sidelobe performance over long periods of time under changing environmental conditions module during service to compensate for long-term fluctuations to achieve and maintain can be empowered.

Additional prior art Prior art for switching features is Andricos US Pat. No. 4.598. ．． No. 252, the amplifiers are connected in parallel and the bias is changed. No method is shown.

Additional prior art documents showing phase correction can be found at U.S. Statutory Invention Registration Date 73CIxbor n, and the phase in the transmitter for temperature variations in both the aperture and the power divider. Corrections are disclosed, but neither receiver corrections nor amplitude corrections are disclosed. stomach.

FROM48.74 of FIG. 3 of Claborn et al. is combined in adder 78. Contains phase correction information.

Andricos' U.S. Pat. No. 4,652,883 further states that 5-bit phase shifter for set phase shift plus preset shift An analog phase shift device is disclosed that compensates for the inaccuracies of a phase shift device.

Brief description of the drawing FIG. 1 shows a conventional transmission and/or reception method.

FIG. 2 shows a block diagram of a T/R module with amplitude and phase correction schemes.

FIG. 3 shows the performance curve of a hybrid combined MSAG amplifier.

FIG. 4 shows the transmit mode output power of the devices summarized in Table I.

FIG. 5 shows the T/R module receive mode passband gain and noise characteristics.

FIG. 6 shows a block diagram of an RF circuit configuration of another embodiment.

FIG. 7 is a block diagram of another embodiment of the T/R module.

FIG. 8 is a block diagram of the amplitude and phase correction of FIG. 7.

FIG. 9 shows the transmit mode signal level and gain distribution for high power mode.

FIG. 10 shows something similar to the reception mode.

FIG. 11 shows the calculation of T/R module noise figure and reception loss.

Figure 12 shows efficiency and power output versus power input graphs for amplifier class B operation. It is f.

Figure 13 is a graph of efficiency and power output versus power input at different biases for B class. It is.

Figure 14 shows the power output versus frequency graph for different drain voltages and B class drive. It is f.

FIG. 15 is a graph of B class power output and efficiency versus power input.

FIG. 16 is a schematic diagram of the 10 dB step attenuator 712 of FIG.

FIG. 17 is a partial block diagram and a partial schematic diagram of power amplifier 711 of FIG. .

FIG. 18 is a schematic diagram of the 5P3T switch 707 of FIG.

FIG. 19 is a schematic diagram of the switch of FIG. 18 in high power mode.

FIG. 20 is a block diagram and flowchart of the digital control circuit in the lower left part of FIG. It is the default.

FIG. 21 is a block diagram of the T/R module amplitude and phase correction scheme.

FIG. 22 is a block diagram of closed loop calibration of the module controller.

BEST MODE FOR CARRYING OUT THE INVENTION A block diagram of the T/R module with amplitude and phase correction scheme is shown in Figure 2. ing. Phase correction is performed by analog phase bits 201 of phase shifter 202. 1" and gain is analog programmable reduction in 0.2dB steps. It is corrected in attenuator 203.

The input to the correctors 202 and 203 is a 13-bit phase code and a 4-bit amplitude code. Consists of corrections. The former has an 8-bit phase shift setting of 204.2-bit frequency setting of 20 5, and a 2-bit temperature setting 206 for both transmit and receive modes. Ru. 8192x8 EEFROM207 for 4 frequencies and 4 temperatures A total of 256 phase states are stored for both receive and transmit modes. Ru. The output line of the EEPROM 207 has a 4-bit phase correction 208 (1, 25 resolution) and 4-bit amplitude correction 209 (resolution of 0.25 dB). It will be done.

EEPROM 207 stores all open loop correction periods entered during module calibration. including. Temperature compensation adjusts the phase and amplitude to correspond to the average temperature sensitivity gradient. cross-module tracking is improved. Frequency input 205 contains the amplitude and and phase ripple. A temperature sensor for input 206 is connected to each module. located on the control board.

4-bit amplitude correction 210 adapts closed-loop gain adjustment for more precise control The condition is added to the compensated gain adjustment 211 in an adder 212 to compensate for the gain adjustment. rank Closed loop adjustment of phase is accomplished by an 8-bit phase command word 204.

The module consists of 11 GaA installed in 5 packages as shown. s MMICIC. ferrite circulator 213 converts the output of the power amplifier 214 into a high power standing wave ratio (VSWR) during transmit mode. and in conjunction with switch 215 to protect from low A signal is sent to a noise amplifier (LNA) 217. Buffer amplifier 218 is attenuator 20 3 and switch 215.

The main assemblies of the T/R module are: (1) The programmable phase shifter 202 has five digitally controlled phases. bits and 11.25-', 22°5-0, and 45-' bits. consists of analog control bits that provide a phase error of less than ±2°. 90-° and and 180-0 bits, the phase error is ±6° over a 1 GHz bandwidth. less than

(2) The programmable attenuator 203 has a constant VSWR and bandwidth. A double gate FET is used to achieve dB gain control. Phase change is 5d B gain change is less than 3°.

(3) Drive amplifier 219 has a power output of greater than 2 watts over its bandwidth. Gives a gain of dB. It is combined with three stage amplifier and high power output It consists of three 2.5m FETs with different output configurations.

(4) Output power amplifier 214 has a gain of 7 dB and 1 dB over its bandwidth. There is a no-event January index with a payoff change of less than 100%. Circulator at output 213 prevents thermal burnout of the FET in high load VSWR.

T/R switch 215 provides greater than 33 dB isolation at high power levels A two-section shunt mode FET switch is used in the receive arm for this purpose.

Insertion loss is maintained below 1 dB over the bandwidth.

(5) In the receive loop, the low noise amplifier 217 has good VSWR and low noise. Using human power and an on-chip range coupler at the output for This is a balanced circuit. A gain of 25 dB is achieved by a 1 dB compression point of +14.5 dBm. achieved.

These chips use a recessed gate method rather than the improved MSAG method described above. It was constructed using Even better performance is achieved with MSAG devices.

Hybrid combination composite of four 3.5 Watt driver ICs using MSAG method Performance curves for the body are shown in Figures 3A and 3B. This amplifier is shown in Figure 3A. 35% over the 5.2 to 5.9 GHz frequency band as shown in Provides 14 watts of output with power added efficiency. The gain is 5.5dB.

These significant results demonstrate the improvements achieved using the MSAG device. to the frequency Gain flattening across is excellent as shown in FIG. 3B. This amplifier is 3 Includes 2mm output FET gate perimeter. The method used under appropriate design conditions It was consistently reported to be 750 mW/mm, so the final value was close to 20 watts. Power amplifiers are possible without problems. This is more power than needed, so the amplifier is rated and improve reliability.

Measurements from the three T/R modules are summarized in Table I. 3 modules A graph of transmit mode output power vs. frequency for 200 nm is shown in FIG. output power exceeds 12 Watts at 5.55GHz. Gain flatness is good.

Bandwidth (1dB) >600MHz Noise figure 5dB Gain 25dB +0. over a 50MHz segment.　3dB gain flatness Input VSWR<1. 5 + 1 Amplitude linear +0.　2dB 1dB compression point +12dBm 3rd order intercept +23dBm Output VSWR<1. 5: 1 5° phase linearity beyond 50MHz segment Transmission mode Gain 25dB Power (at module output) 12 Watts output VSWR≦1.3:1 Power efficiency 20% Input VSWR<1. 5: 1 Pulse width 0. l-200usec Duty cycle 30% maximum Pulse amplitude droop 0.1dB (100usec) Intra-pulse phase 5゜ Input VSWR<1.5:1 Phase shift device 6 bits Phase accuracy <3’ RMS 5° peak Amplitude change 0.5dB peak (0.25dB RMS) Programmable attenuator range 15dB power supply +12V, -12V Electric drain 17 watts (25% duty) Weight: 8 ounces Dimensions 4-7/8 Xl-3/8 Xi inches Operating temperature -54~+85℃ FIG. 5 shows the T/R module receive mode passband gain and receive noise figure.

The gain is flat over the frequency band of interest.

The module can be used to determine phase and amplitude changes with or without correction circuits. Tested over a temperature range of -55°C to +85°C. If there is no correction, the T/R model Joule receiving mode is less than 10° over the maximum temperature range of -55°C to +85°C. 3 shows full phase and gain tracking of less than 1.5 dB. The correction circuit corrects the average module slope. The phase and amplitude are adjusted depending on the temperature to set each value that approximates the distribution. this Gain to within 0.5dB peak and phase to within 5°peak over operating temperature Correct. This results in an RMS phase of 3" and an amplitude tracking error of 0.25 dB. Ru.

Similarly, without correction, the transmit mode gain is within +1.5 to 2 dB, with one direction Phase tracking is within 15° for operating temperatures of -55° to 85°C. If there is a correction, Tracking error is reduced to 0.5 dB peak amplitude and 5″ phase. T/R module Aggregated tool sensitivity and tracking data are shown in Table II.

Table II “T/R Module Temperature Sensitivity and Tracking” (-55 to 85°C temperature range and Sensitivity to 00MHz bandwidth 0.11dB/'C1, 14°/℃ tracking +0.5 dB ±10° (0.5dB <5° Transmission mode Sensitivity 0.091dB/'C1,08°/℃ Tracking +1.5dB, -2dB±1 5°　＜0.5dB　＜5〜T/R module response to voltage change from power supply Sensitivity factors for all GaAs circuits with and without internal regulator be compared. Sensitivity is summarized in Table III.

Internal regulator rejects low frequencies (<120Hz) greater than 60dB of input variation give. Regarding the internal power regulator, all DC sensitivities are negligibly small. will be reduced to A voltage change of ±10% of the total bias voltage to the module is Unadjusted power causes measurable gain or phase changes in receive mode Adjusted by distributor +2.5 60 10 (0,6<0.1-4.0 26 1<0.2<0 ．． 01+5.0 2.5 0.25 <0.025 (0,025 transmission mode +5 8.7 2.5 <0.08 <0.02-4 62 5dB <0.6 2　＜0.05+89.60.76　＜0.09　＜0.007 pieces -2,5407,5<0.4<0.007*(Power FET gate bias only ) The RF circuit configuration of another embodiment of a module such as that shown in FIG. Contains many features.

The integrated front dipole radiating element 601 and the integrated rear dipole radiating element 602 are RF connector to adapt operation as an active element of a space-fed lens array. exchange with ta.

The T/R switch 603 of the DPDT is used to re-adapt the space lens operation. Provided at the rear of the module.

The RF circuit for each radiation channel consists of five MMICs as shown in Figure 6. Divided into chips. This high level of integration reduces chip yield and interconnect cost. Match the best compromise between.

All MMICs of the module are manufactured by a single method. Driver 604 and and the final power amplifier 605 has an efficiency of 35% over the 5 to 6 GH2 band. It was found to give a flat 14 watt power output.

The intelligent module controller 606 is an ASIC (applied special integrated circuit) gate array. Composed in form. Module controller 606 controls array and T/R modules. wireless control of, as well as T/R module status monitoring, error calibration, and alignment. is allowed.

Table IV summarizes the performance characteristics of each RF channel of the module assembly.

Operating frequency band: 5.25-5.85 GHz Minimum gain: Nominal 32.8 dB RF Power Output (Emitted) 12 Watts Minimum Peak Duty Cycle 20% maximum Pulse width: 1 to 200 microseconds Maximum load VSWR infinite (open or short circuit) power amplifier Chain frequency 35% (DC to RF) RF reception channels (each) Operating frequency band: 5.25-5.85G Hz Minimum gain: Nominal 25dB Noise figure (system) 2.8dB maximum 1dB compression point +10dBm (output) 3rd order intercept +20dBm Human power VSWR<1. 3: 1 Common RF characteristics Phase shift device 6 bits (5 digital + 1 analog) Programmable attenuator range minimum 10dB Figure 7 shows the invention using four chips 2 shows another embodiment of the T/R module. Required phase of T/R module and high uniformity MSAC is important to achieve amplitude accuracy and tracking. The method and module are simple open-loop error correction uses.

Tight phase and amplitude accuracy with respect to phase state, attenuation range, frequency, and temperature An open-loop pre-calibrated configuration is used to meet the . It is not expensive and gives minimum requirements for antenna configuration.

The detailed block diagram of the module shows that the command signal is connected to the module's 3' RMS phase and and the method processed by the controller to obtain an RMS amplitude accuracy of 0.5 dB. shows. Three EEF ROM2O3, 702, 703 are each programmed instruction Used to store corrected values of gain and phase for the command.

High uniformity and small phase and amplitude gradients with respect to temperature and frequency The use of GaAs chips meant that the initial phase and amplitude errors were calibrated by FROM This is important to later meet the tracking requirements between devices. Accurate voltage input to module power minimizes errors due to voltage fluctuations. Measurements on the GaAs chip are performed after the combustion stage. It shows good long-term stability of the parameters, making the open-loop calibration method viable.

A block diagram of the T/R module amplitude and phase correction is shown in FIG. phase Corrections are generated up to ±10° by analog phase bits in phase shifter 801. On the other hand, the gain is an analog programmable attenuation device with steps of ±0°25 dB. It is corrected in 802.

The input to EEFROM 803 is a 6-bit position for both receive and transmit modes. Phase shift setting 804, 3-bit frequency setting 805, and 3-bit temperature setting It consists of a 13-bit phase code composed of 806 bits. EEPROM output The signal has a 4-bit phase correction 807 (1.25 degree resolution) and a 6-bit amplitude correction. 808 (0.25 dB resolution). EEFROM803 is a module Contains all open-loop correction periods entered during tool calibration. Temperature correction is average temperature Inter-module tracking is achieved by adjusting phase and amplitude to accommodate sensitivity gradients. Improved. Frequency input is in-band amplitude and position at 100MHz intervals. Adjust for phase ripple. Temperature sensors are located on each module controller board. be placed.

The phase bit input command signal 804 has a transmission gain changed by a digital adder 809. is changed by the necessary phase correction when Phase for receive gain control No correction is necessary due to the phase accuracy and stability of programmable attenuator 802. stomach.

The module controller performs the following operations on the module.

a) Receive the 6-bit phase command signal 804 and accurately set the module phase.

Phase correction is performed over temperature and frequency to maintain required module accuracy and tracking. , and for phase states. In addition, phase correction allows the transmit gain to switch applied when the switching amplifier is varied to compensate for changing drive levels. It will be done.

b) Receive a 5-bit receiver gain control command 810 over a 20 dB range. Set the gain. Corrections are applied to compensate for nonlinearities in analog attenuator 802 be done.

c) Receive the 6-bit transmit gain control command 811 and control the monitor over a range of 30 dB. Set the joule transmission gain. The decoder switches on all power amplifiers. , configure the module in corrected power output mode. Control device in dynamic range to compensate for nonlinearities in the output amplifier.

d) converting the output of a control device with a built-in temperature sensor into digital form and The output is used to correct the phase and gain slope of the signal to improve tracking. electric power The MO3FET switch that turns on the amplifier and selects the drain supply is controlled It is a part of the device. An interface that provides gate bias for the correction FET switch. Ace circuits and level shifting devices are also part of the control system.

The microwave section in Figure 7 consists of four circuits, three of which are completely integrated. It is an MMIC design that has been made into Power amplifier 711 is an external splitter and combiner It is a hybrid circuit that includes four monolithic circuits with . All T/R Module 705 and power mode door 06 output power mode 3P3T switch 7 All but 07 are integrated in MMIC chip configuration.

GaAs PIN diode minimizes switching losses in high power mode Used for this function to Separated EEFROM has phase instruction 7 01, reception gain command 702, and transmission gain command 703. De The coder 708 sends the power amplifiers 709.710.711 the appropriate Switch to a different format.

Programmable attenuator with O/10dB digital switch 712 and 0-1 It consists of a 3 dB analog attenuator 713. This reduces the number of modules required. programmable for all conditions, i.e. temperature and frequency It is used to precisely adjust the gain change of phase shifter 714. buffer Amplifier 733 is connected between digital attenuator 712 and switch 706.

The phase control EEPROM 701 is connected to a built-in thermistor 716 via an A/D circuit 717. Then, the 3-bit temperature 715 is input. The 3-bit frequency control 718 also has 6 The corrections are manually performed over an operating band of 00 mHz. The control device also A level converter that sets the voltage input to the MMIC circuit at the appropriate level for operation. include.

The +5V incoming voltage supplied to conductor 719 and the +5V incoming voltage supplied to conductor 720. The incoming voltage of IOV and the incoming 10V supplied by conductor 721 The voltages are filtered by filters 722, 723 and 724, respectively, and the positive supply It is held during the pulse by a large storage capacitor 725 that bypasses the supply.

FET switch 726 between +10V, +5V, or 0 volts This is a multiple MO3FET device that switches drain voltage. Separate drain control Enables unused amplifiers to be switched off, reducing class B idle current to zero. make it possible.

B-class amplification is used to increase efficiency and reduce temperature.

The command switches switch 729 between EEPROM 702 and 703, and interface to switch switches 705, 706 and LNA switch 730. Guided by chair 728. Digital to analog converter 731.732 is that The output from the EEPROM 701 is transferred to the analog cap 3 of the phase shift device 714. 4 and an adder 727 with the output of switch 729 as its other input. It is converted into an analog human cuff 35 through an attenuator 713. Adder 727 digital Output cuff 36 flows to digital attenuator 712 .

Receive channel elements have low overall noise figure and dynamic range over operating temperature. are arranged to optimize the The gain and level diagram shown in Figure 9 is at 25°C. and the signal level encountered in the receive path at 75°C. The overall receiving gain is 75°C. 25 dB, increasing to 30 dB at room temperature. These gain changes are due to the amplifier with a nominal gain vs. temperature of 0.016 dB/’C per stage. Corresponds to degree gradient.

The module is expected to track gain very closely with respect to temperature and is A loop correction is applied to bring each module's gain versus temperature slope to a nominal value. prediction maximum operating level of -28 dBm and maximum linear level of -21 dBm. Two input signal levels of Bm are shown in FIG. Module noise figure requirements is consistent with using an input preamplifier with a noise figure of 2 dB at 25°C. . The calculated results shown in Figure 11 are calculated at 25°C taking into account the 1.25dB input loss. Provides a module noise figure of 3.2 dB and a noise figure of 3.8 dB at 75°C. show.

The 1 dB compression point of all active microwave elements is the signal at which the maximum operating signal level is encountered. It is shown in FIG. 10 along with the number level.

All signals shown in the table are greater than 5dB under compression, so they have excellent amplitude and phase lines. form is achieved.

Receiver instantaneous dynamic range with 4 dB noise figure and 100 MHz bandwidth It is shown in FIG. 11 using . Dynamic range of 69dB is 9dB at 25℃ A maximum output signal level of m is obtained. 69dBm dynamic range at 75°C is obtained with a maximum output signal level of 7 dBm.

The transceiver's use of broadband monolithic elements provides superior performance across the operating bandwidth. This results in phase linearity and low amplitude ripple. Existing GaAs monolithic Less than 0.2 dB amplitude reversal over 200 MHz measured with a C-band amplifier. It was proven to have a phase linearity of less than 2°.

Transmit output power is maintained above 10 watts (+40 dBm) and the overall maximum Gain remains above 30 dB for all operating environments.

The transmission level distribution diagram in Figure 9 shows the transmission path for operating temperatures of 25°C and 75°C. It shows the signal level and gain along.

The change in nominal gain with temperature is measured or estimated gain versus temperature sensitivity and power stage. based on changes in drive level. When the temperature is 25℃, the buffer amplifier 904 is compressed to 1 dB and becomes a power output amplifier 906. 10.94 watts Output power is achieved with an overall gain of 30.4dB. When the temperature is +7500 , all amplifiers 904,906 will get 10 watts with a total gain of 30 dB. Therefore, it is compressed to less than 1 dB.

Both harmonic and non-harmonic spurious frequencies remain at low levels at the transmitter output. held. DC bias according to nj constant of single-ended B class power amplifier 40dB suppression of harmonics by supply 1/4 wavelength line and matching network give. Additional suppression of the output isolator further reduces this noise figure.

Power amplifiers are designed to be stable and avoid spurious modes when operating in pulses. does not indicate. The operating voltage is kept below the avalanche point and the power supply prevents regeneration. filtered enough to ensure

Discrete non-harmonic spurious signals are pulsed and continuous wave B of the power FET. It was found to be constant in class mode and less than 65 dB.

The measured performance of the GaAs FET operating in B class mode is 7 dB dynamo. Superior efficiency with high efficiency, constant gain, and good phase characteristics over the mic range. It shows the characteristics that

Multiple devices and circuits were used to determine the potential for GaAs FETB class operation. Measurements were made in the C-band with both pulsed and continuous wave inputs.

The device tested was a GTC AlGaAs 2-5mm power FET. The power amplifier MMIC circuit consists of three standard power FETs (GTC227-1) and Internally matched manufactured by Shitsu Co., Ltd. (FLM5359-14) A power FET was used.

All these amplifiers were tested in B class mode in single ended form.

Characteristics important for application as variable power elements in T/R modules were measured. Ta. These are power output vs. power input linearity, power added efficiency, and transmit phase change vs. input. power, and operation at reduced drain voltages. About pulse operation Measurements were made to determine the on/off characteristics of a B class amplifier. Pal phase deviation during the pulse (intra-pulse phase change) and phase change between pulses (intra-pulse phase change). phase change) was measured. Similarly, the intra-pulse amplitude droop ($ ) and pulse-to-pulse amplitude changes were noted. For good MTI performance, this It is important that their phase amplitude and phase change are low and that they do not exhibit irregular characteristics. Ru. The gain and phase sensitivity to drain voltage during pulsed mode were also measured. Ta. Spectral analysis of pulsed and continuous wave modes determines spurious levels It was done for.

GTC's 2.5mm AlGaAs power FET has good characteristics for B-class operation. have sex. This characteristic has a low pinch-off voltage of 2V and a high drain breakdown voltage of 30V. Including voltage, and high gain.

The GTC's 2.5mm FET is biased at -2V, with a slight pinch-off voltage of the solder. A quiescent drain current of 0.1 mA was set.

The power added efficiency and power output versus power input curves are shown in FIG. 7.5 A sufficiently constant gain in dB is obtained up to the 1 dB compression point, resulting in a gain of 1.7 watts (+32.4 dB). Bm) occurs due to the way it appears. The power addition efficiency peaked at 50.7% at this time.

Operation from the 1 dB compression point to +25.4 dBm (0,346 watts) The rate will remain above 25%.

Gate current is monitored over the input drive range to 20mA at the 1dB compression point. reach. For a 10-finger device, this requires 2mA for reliable operation. Close to the maximum allowable finger gate current.

The range of the 10 dB transmit phase change is less than ±1°5'' up to the 1 dB compression point.

A similar type of measurement is the C-band power FE of Fujitsu's FLM 5359-14. The results are shown in FIG. 13. The internally matched power FET is It is a hybrid device with a pinch-off voltage of 2V and a breakdown voltage of 30V. .

Efficiency, power output and phase shift device vs. input power levels are +10V, +9V, + Recorded for drain efficiencies of 7V, +5V, and +3V.

The gain is constant for each operating voltage over a wide dynamic range. gain drops from 7.5 dB at +IOV to 6.0 dB at +5V. 1d The power output with B compression is 16.3 watts (+42.14 dBm) at +10V. Yes, it is 3.88 watts (+35.88 dBm) at +5V.

The graph of transmit phase change Δφ vs. power output is from low level input to +10V, +7V, and +5V (7) 1dB compression point gusset is shown. Phase shift less than ±1.5° occurs for all these operating voltages.

Peak power efficiency is 35 for all these voltages in the 5V to 10V range. remains higher than %.

A graph of power output with respect to frequency characteristics at different drain voltages is shown in Figure 14. ing. In the range of 5.3 to 5.9 GHz, the bandpass curve shows that the power supply is +3 It is maintained in the same way as when changed from V to +IOV.

The very low knee voltage allows this FET to connect to the +3V drain supply. Thus, it exhibits acceptable performance when in operation.

Tests of MMIC power amplifiers using MSAC devices were conducted. Pin to FET The switch-off voltage is -4,61V, the bending voltage is about +2,6V, and the drain Breakdown voltage is 18V.

The performance of this amplifier in B class mode is shown in the curve of FIG. 4dB line Shape gain is obtained up to a 1 dB compression point of 1.4 watts (+31.46 dBm). electric The power addition efficiency peaks at 23% and smoothly decreases to 1 as the power drops to 7dB. Reduced to 0%. Low gain, high pinch-off voltage, and bend voltage can result in low efficiency. There is a potential. The drain efficiency of this device is approximately 39%. In this circuit, AlGaA By inserting s FET, the efficiency increases to more than 50% and the gain is 7°5 dB and the power output increases to 3 watts.

The curve of the graph of phase shift vs. power input is less than 2° over the dynamic range. Gives good results.

The measurement curve for pulsed operation of the power input is 2° over the dynamic range. Gives less than good results.

Measurements of pulsed operation of power amplifiers include on-off characteristics in B class operation. was performed to determine and measure transient phase and amplitude effects.

B-class power amplifiers offer excellent linearity, efficiency, and efficiency over a wide range of power output levels. and pulse characteristics. Over a dynamic range with a spurious level of 10dB is lower than 65dB.

This T/H module uses a total of four GaAs chips; The top is fully multifunctional and fully integrated. Table V shows chips and related It shows the characteristic that

Chip suite uses MSAG method for superior performance and improved reliability . These chips have through holes, internal bias resistors, and connections. It is a single-substrate multifunctional circuit that includes:

Chip Function Chip Dimensions Total No, mm2 FET periphery 1 Programmable (5X 5 mm) 50.1 mm phase shift device Analog attenuator 25 DTPD switch 2 Low noise amplifier (4, IX 4.4 mm) 11.8 + 1110 buffer Amplifier 18 SPDT switch 3 Pre-drive amplifier 6X6mm 47mm drive amplifier 36 2SPDT switch High power T/R switch 4 Power amplifier 4X4mm 20mm 4 chip hybrid 16 (each chip ) Chip #1 is a low power DPDT switch 705, programmable phase shift device. 714, a digital 1-bit programmable attenuator 712, and an analog attenuator 714. It consists of an attenuator 713.

The DPDT switch 705 is actually two 5PSTs (chip # 2) is a series shunt switch. 1-bit programmable 0.1dB speed The step attenuator consists of two 5PST 600μM F with fixed resistor pads. Use ET switch.

Phase shifter 714 is a precise 6-bit (5 digital + 1 analog) MMIC configuration. It is a total. MMIC chip morphology and its measured performance vary with frequency, temperature, and and phase bit settings, as well as low insertion loss and low insertion loss variation. It showed excellent phase accuracy. This is true of any other reported MMIC phaser. It has the best characteristics.

Programmable phase shifter 714 provides phase accuracy and amplitude stability. It is a key element of the transceiver that maintains tracking between devices. This phase shift Device 714 is a T/R module when combined with an open loop error compensation and correction circuit. meet the system requirements. Correction is made using the analog phase correction bit 734 and the program applied to the ram-enabled attenuator 713. Phase shifter consists of 5 digital bits and one analog bit. The resolution of the 6th bit of 5.6° is This is accomplished using log bit control. This is also due to errors in the phase shifter as well as Used to correct other external errors.

The ±10°10° nodal range of this bit is dependent on frequency and temperature in the worst case. This allows complete compensation of phase errors for all bits.

Phase shifter 714 is composed of six cascaded stages. 11. ．． 25 °, 22.5°, and 45@bit consist of loaded line sections. while the 90° and 180° bits are used as lunge connections for reflective phase shifters. Use a combiner. The latter has a line width and gap of 12 μm and a total length of 4.9 A lunge coupler designed to be 6 mm is used. 2400μm FET The switch produces a reflected incoming signal with the required 90" phase shift in the transmission Terminate the line matching network. The FET dimensions for each bit are the best V Optimized for SWR and insertion loss, all three different FET peripheries in the circuit ie 1200 μm, 1800 μm1 and 2400 μm.

These large FETs also exacerbate high power handling capabilities.

Analog bits have variable impedance to adjust phase shift over ±10' Consists of 22" range using FET in dance mode. Load line section is It consists of an approximately 1/4 wavelength long transmission line of about 50 ohms, with F at both ends. Loaded with a high impedance stub terminated by an ET switch. phase shift The measured performance of the lift device is summarized in Table VI.

Table VI Programmable measured phase shift device performance operating frequency 5.0~6.0 GHz Digital bit 180', 90° Analog bit ±10° Phase accuracy 5’RMS over bit, frequency, and temperature Insertion loss 7dB maximum Bits, frequency, and temperature Loss change for ±0.5dB Switching time 0.2 μs Analog bit adjustment range ±10° Insertion loss change Phase ±0.2dB peak Control voltage -3~Ov Phase stability ±1° In-out VSWR≦1.4:1 1dB compression point +20dBm 3rd order intercept point +30dBm analog programmable attenuator 713 adjusts the T/R module gain over a 10dB range, phase settings, Used to compensate for gain changes (3dB) due to frequency and temperature. Reduced sensitivity to less than 1° per 6dB gain, increased system accuracy let This is achieved by using both gates of a dual gate device for control. be done.

Its performance is shown in Table Vll.

Table VII Programmable damping characteristics Operating frequency 5.0~6.0GHz Gain control analog Gain adjustment range 13dB Insertion loss 3dB maximum Noise figure (maximum gain) 5dB Over 10dB attenuation Phase change ±1″ Regarding temperature and frequency Amplitude stability ±0.2dB 1dB compression point +5dBm 3rd intercept point +15dBm Gain control switching time ±0.2μs input VSWR<1.4: 1 Human power VSWR<1.4: 1 Power: +5V at 10mA -4v at 1mA The 1-bit 0/10 dB digital attenuator 712 has a fixed 10 dB step gain. Used to provide gain changes to modules. This design is shown in Figure 16. DPDT switch 16 developed by RAD 1602 with a fixed resistance. Use 01. Through line 1603 is within the 10 dB Swiss-Sochi range in length. phase matched to a phase change of greater than 1° over the entire range. to minimize dimensions In addition, a 600 μm FET can be used for the switch because the absolute loss is not critical for this circuit. used.

Performance details are shown in the table.

Table VIII Performance of 1/10 step attenuator Operating frequency 5.0 to 6-0 GHz Attenuation 0 or 10dB Attenuation accuracy ±5dB Differential phase shift　±1゜ Fixed loss 2dB maximum Open during switching: 0.2 μsec Human power VSWR<1.4: 1 Output VSWR<1.4: 1 1dB compression +10dB Maximum voltage input +20dB Command -3 to OV High impedance − DPDT T/R switch 705 handles +10dBm or more and prevents crosstalk Therefore, it must have high insulation.

Two 5PST switches using 2.5mm FETs in series shunt configuration are used for constructing complex circuits.

The performance of the switch is shown in Table IX.

Table IX DPDT T/R switch performance operating frequency 5.　0～6.　0GH z Maximum power (CW) 100mW (+20dBm) Insertion loss 1dB Insulation ≧40dB Switching time ≦0.2μs Input VSWR<1.4 +1 Output VSWR<1.4: 1 Chip #2 is integrated on a single chip with dimensions of 4100 μm x 4400 μm. It includes a 3-stage LNA 737, a 2-stage buffer amplifier 733, and 5 PDT switches. Includes Tsuchi 706. Preamplifier 737 has three 0.8 μm x 300 am G aAs FET, while the buffer amplifier 733 is 0.8 μm x 300 a m and a 0.84m×600μm FET. 5PDT switch 706 is Contains four 2.5mm FETs in series shunt configuration.

The receiver LN A 737 and buffer amplifier 733 have a 2 dB noise figure, high New MSAG ultra-low noise FETs to achieve gain and dynamic range This is a low noise amplifier used.

The amplifier has a required overall system dynamic range of 60 dB and 2.8 dB. Designed to meet noise figure. Low noise, low input VSWR, and reception Low noise preamplifier 737 and 17 with 25 dB gain stage for machine input dB gain and high dynamic range used for both receive and transmit modes Two amplifiers are used: a buffer amplifier 733 with . Input amplifier is +6 Wide dynamic range with 1dB compression point of dBm Maintain linear characteristics of the system. The low-noise preamplifier 737 is a three-stage single-en buffer amplifier 733 uses two vertical stages to meet these requirements. Use a connected amplifier.

The performance of these amplifiers and switches is shown in Table X1 and Table X11. ing. External PIN diode limiter is damaged by +20dBm continuous wave input Operating frequency used to prevent 5.0 to 6.　0GHz Nominal gain (75℃) 25dB spanning a bandwidth of 100MHz Gain flattening ±0.　2dB Input VSWR≦1. 4: 1 Output VSWR≦1.4:1 Noise figure at 75℃ 2dB maximum 1dB compression point ≦+5dBm 3rd order intercept point ≦ +15dBm 100MHz bandwidth Phase linearity over ±2° 100MHz bandwidth Amplitude linearity over ±0.1dB Bias: 5V for 25mA Input CW level, no damage +15dBm Table XI Buffer amplifier performance Operating frequency 5.0~6.0GHz Nominal gain (75℃) 17dB spanning a bandwidth of 100MHz Gain flattening ±0.2dB Input VSWR≦1.5:1 Output VSWR≦1.5:1 Noise figure at 75℃ ±3.0dB Maximum 1dB compression point +15dBm 3rd order intercept point +25dBm 100MHz bandwidth Phase linearity over ±2° 100MHz bandwidth Amplitude linearity over ±0.1dB Bias 5v for 30mA -4V for 1mA Table XII Performance of 5PDT-T/R switch Operating frequency 5.0~6.0GHz Switch form 5PDT Maximum power input (CW) 100mW (+20dBm) Insertion loss ≦1dB Insulation ±30dB Switching time ≦0.2μs Human power VSWR≦1.4: 1 Output VSWR≦1.4: 1 Command on Ov Command off -3V Chip #3 includes a high power T/R switch 705, a predrive amplifier 709, and a drive amplifier. It includes a chain 71O1 and two 5PST switches 738, 739. 5PST Switches 738 and 739 are similar to the switches on chips #1 and #2, but with higher has a high power level. Output switch 739 is set to use 2 watts of power. A 4mm FET is used.

Predrive amplifier 709 and drive amplifier 710 are 240mW and 1.0mW, respectively. It is a B class circuit that supplies 7W.

Predriver amplifier 709 is a 600mm F biased for B class operation. Consists of ET. FET has low pinch-off voltage of -1,5V and 10cl It has a B class gain greater than B. The performance of the amplifier is shown in Table Xll+. Ru.

Table XIII Predriver amplifier performance Operating frequency 5.0~6.0GHz Operation mode B class Power output (1dB compression) 250mW Gain 10dB minimum Power added efficiency 67% Operating drain voltage +IOV Input VSWR≦1.4:1 Output VSWR≦1.4:1 The drive amplifier 710 consists of a 2.5 mm FET that produces 1.7 W of power. Ru. This amplifier is used for the output stage in medium power mode of the T/R module. Ru. Its performance is shown in Table XIV.

Table XIV Drive amplifier performance Operating frequency 5.0~6.0GHz Operation mode B class power output (l dB compression, +lQ V drain) 1.7") Cut gain 9 dB Power added efficiency 67% Operating drain voltage +5v~+1ov Input VSWR<1.4: 1 Output VSWR<1.4: 1 Chip #4 is bonded onto a high dielectric microwave substrate as shown in Figure 17. Contains four 3.2 Watt amplifier discrete MMIC chips 1701. It is a hybrid circuit. This constitutes a power amplifier 711.

Each MMIC chip amplifier 1701 operates in B class in push-pull circuit configuration. Includes two 2.5mm FET 1702. Each MMIC chip is +10■ 3.2 watts of power at the 1 dB compression point when operating with a drain voltage of can be generated. The 4-way coupling at 1703 has a total power of approximately 12 watts. generate.

The performance of power amplifier 711 is shown in Table XV.

Table XV Operating frequency 5.0~6.0GHz Operation mode B class power output (1dB compression 'I +10V drain 12W gain 9dB Power added efficiency 67% Operating drain voltage +5V~+10y Input VSWR<1,4:1 Output VSWR<1.4: 1 The total 12 watt amplifier has a very high density package. input and The output substrate and single-chip GaAs FET provide excellent heat shielding in a hermetically sealed environment. Mounted in a 0°5XO, 5 inch metal container with a

The input section is a 2°5 mm GaAs with 1704.4 pairs of 4-way electric cassettes. Four baluns (balanced/unbalanced transformers) feeding the FETs, and four single It has a pure impedance converter 1705. The output section collects the total output power. is a replica of the input to be used. Balun design due to changes for small dimensions It is a standard coplanar circuit.

Each module's coarse transmit output power level is quickly selected using a high-efficiency RF power switch. By providing a channel, low power loss is maintained.

Coarse control of the module transmit output power level is provided by a single-pole triple-role RF switch 707. It is done. Insertion loss associated with each switch position is minimized. because This is because it reduces the overall module output power. The first switch position is Handles RF power levels from 1 to 10 watts, with overall efficiency meeting the most critical demands. There is one.

The switch design compromise is low loss in the level 1 position and the second and third levels. Emphasis on compromise. The electrical characteristics for selected candidates are shown in Table XVI. It is.

High power <0.1dB>50dB Intermediate power <0.3dB>28dB Low power <0.3dB>28dB High frequency switches have low insertion loss and high Good insulation can be achieved. Currently, new technology regarding GaAs has high cut-off frequency. It can be used for PIN diodes with low wave numbers and low insertion loss. 3 direction sweets The RF equivalent circuits of the above are shown in FIGS. 18 and 19.

P+, P3, and P4 are input connections to the three differential power supplies. DL” 2A’ and D3A are treated with zero current, D and D3B are Each is driven by 10mA, and 2B at P RF power is transmitted to P2 and isolated from P3 and P4. Ll is input VS Inserted to reduce WR. Level 2 and 3 transmission lines are connected to each diode. The selection is made by alternately conducting current between the two. Off diode is highly insulated Biased at -10V.

FIG. 20 shows the digital control circuit for the variable power T/R module. input data The data contains frequency (3 bits), phase (6 bits), transmit amplitude (5 bits), and receive It consists of a signal amplitude (6 bits). These data words are input data strokes. The input data is latched by the input data latches Ll-L4 at the rising edge of the probe ID5TB. Ru. At this time, the temperature data (3 bits) converted from analog to digital is sensed. Thermistor 2001 that has been turned on is also latched. The input data strobe is timing and control (TRS, TSTB, R5TB) and electrically erasable Activation of programmable read-only memory (EEFROM), standby mode control start the process.

EEFROM Pi (701) performs the necessary phase correction during transmit and receive modes. cormorant. Phase correction during transmit mode is amplitude dependent, while phase correction during receive mode is zero It is b. The contents of this EEFROM Pi are added to the received phase. send and receive phase and amplitude command data are obtained from EEFROMMR5. This E EFROM uses 3 bits for frequency, 3 bits for temperature, and 6 bits for phase. address. EEPROMP2. P4 is the transmit and receive mode of operation respectively. Provides amplitude correction data for the code. These data are stored in EEPROMP5. is added to the supplied amplitude data. Adder A2 (727) is a 6-bit Performs amplitude data and gain control in 10 dB steps of 1 bit. E　E　PR OM P3 (703) is pre-drive type gain, driver gain, output path selection (+5V), and FET voltage selection (+10 V).

The transmit and receive T/R module commands are output latch L5. Stored in L6 be done. The final output consists of:

a) 5-bit digital phase b) 4-bit analog phase (after digital-to-analog conversion) c) 6-bit analog phase Log amplitude (after digital-to-analog conversion) d) 1-bit 10dB step control e) 6-bit analog amplitude (after digital-to-analog conversion) f) 1-bit prefix Driven gain control g) 1-bit drive gain control h) 3-bit output path selection i) provide 2-bit FET +5V and +10V selection phase and amplitude accuracy; GaAs processing with excellent uniformity for tracking by T/R module and an external online closed-loop error correction system that automatically aligns the array. It is important to use simple open-loop error correction in the module supported by It is essential.

The T/R module allows open-loop and closed-loop correction of both phase and amplitude. make it possible. Open-loop correction compensates for the phase shift and compensates for amplitude and amplitude errors, as well as changes over the operating bandwidth and temperature range. to correct. Module gain and phase are within ±0.5dB of receive and transmit. All are precalibrated to give gain and phase within ±5° of reference.

GaAs chips with highly uniform phase and amplitude gradients with respect to temperature and frequency After the initial phase and amplitude slope errors have been calibrated by FROM, This is an important factor when matching tracking goals between devices. Positive in module Accurate voltage regulators minimize errors due to input voltage fluctuations.

This accurate open-loop phase and gain tracking method makes the T/R module structure-independent. to save. That is, the module operates in antenna structures that are not space-supplied. do. However, the unique space-feeding antenna has residual phase and amplitude errors. It is very suitable for closed loop monitoring and calibration to bring the temperature to zero.

Closed-loop correction provides low side-low over extended time under changing environmental conditions. module during service to correct for long-term drift to achieve and maintain performance. can be entered into the module.

A block diagram of the T/R module amplitude and phase correction scheme is shown in Figure 21. Ru. Phase correction is performed using a phase shifter 2101 to adjust the phase by using analog phase bits. within 10° while the gain is an analog programmable attenuator 2103 is corrected in steps of ±0.2 dB.

The input to the corrector is a 13-bit phase code 2105 and a 4-bit amplitude correction term. 2107. The former has 8 bits for both transmit and receive modes. Consists of phase shift setting, 2-bit frequency setting, and 2-bit temperature setting. It will be done.

8192X8 EEPROM 2109 has 4 frequencies, 4 temperatures, and A total of 256 phase states are accommodated for both transmit and transmit modes. E　E The output line of PROM 2109 is 4-bit phase correction 2111 (1, 25 ’ resolution) and 4-bit amplitude correction 2113 (0.25 dB resolution). It will be done.

E PROM 2109 contains all open loop inputs during module calibration. Includes correction term. Temperature compensation adjusts the phase and amplitude to correspond to the average temperature sensitivity slope. tracking between modules is improved. The frequency input is the in-band amplitude and and phase ripple. Temperature sensor is installed on each module controller board located in

Referring to FIG. 22, in the receive calibration closed loop mode, the calibration step at the indicated position Switch 2201 allows one "unique" element in array 2203 to be set for calibration. (at a given time), while all other “non-specific” The device is on, i.e. all non-specific device voltages are gated off and its The switch is set to the transmit mode position or some special high isolation position. comparison The signals generated by the positive horn 2205 and input to the four dipoles are directed to specific elements. and passes through the same module as the receiving module, while the signal passes through all other excluded in the element.

Transmit calibration closed-loop mode is used to align the antenna beam in transmit mode. offline mode. Here, one unique element of array 2203 is set to communication mode, amplifier 2287 is gated on while the other All elements are maintained in command mode. Continue this method until each element is aligned. It will be done. Alignment during transmission is affected by gain and sidelobe tolerances, or is the receive beam aligned? Compared to , the number of transmission beams is not so large, so it is not necessary. This mode is Primarily used as a test during initial installation.

Following beam control commands, calibration is performed on the previously identified characteristic elements prior to transmission. be exposed. This element receives a signal initiated from the pilot pulse calibration horn 2205. maintained in receive mode to receive. All remaining elements are placed in their best isolated position (transmission communication mode or special off setting). Calibration passes through the module Includes downlink signal measurements. Here, a special element, i.e. a special phase and The phase and amplitude response characteristics of the element in the amplitude and phase values or data based on antenna test distance measurements) . Radar controller reduces calibration data after all modules finish cycling . The actual update correction for each element occurs during the next alignment cycle on a closed loop basis.

Now that the principle of the present invention has been clarified, without departing from the principle of the present invention, Modifications to adapt to particular situations will be apparent to those skilled in the art. The scope of the attached claims is As such, modifications and variations may be made to cover the foregoing scope and be limited by the true scope of the invention. It's just being done.

Po (dam) FIG, S Frequency (GHχ) FIG. 12 FIG. 14 FIG, l5 FIG. 17 FIG. 18 from the control device abstract C-band transmit-receive module for active aperture radar is sensitive to temperature, power variations, and operating bandwidth , and a multifunctional self-aligned gate method to correct errors due to phase conditions. Therefore, using the preferred gallium arsenide chips manufactured by Provided using open-loop and closed-loop error correction.

In a second embodiment, the power output amplifier includes a pre-driven stage, a driven stage, and a power output amplifier. Provided using an amplifier stage, no power amplifier or power amplifier and driver is required. If not, it can be switched out of the circuit. Amplifier bias must also be It can be lowered if This is done to increase efficiency and decrease temperature. be exposed.

In these two embodiments, a B class amplifier is preferred.

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Claims (19)

[Claims] 1. Microwave power is distributed to each antenna aperture rather than being split from a common source. In a phased array radar system, each aperture channel is amplified separately. The transmit and receive modules included in the channel are a first set of T/R switching means terminals, a phase shifting device and a programmable a buffer amplifier; a second set of said switching means; and a power output a power amplifier and a transmitter input at the transmitting position of said switching means of the second set; connected in series between the antenna and the circulator, and the circulator is connected in series between the antenna and the circulator. means for connecting to the circulator and the ground at the transmitting location; a third set of terminals of the T/R switching means connected to each other; and a low noise amplifier. , a second position of the first set of terminals, the phase shift device, and the program. a possible attenuator, the buffer amplifier, and a second position of the second set of terminals. the antenna aperture and the receiver output terminal at the receiving position of the switching means; with phase, frequency, temperature, and amplitude correction inputs. transmit and transmit over short period changes in phase conditions, attenuation range, frequency, and Closed-loop digital and analog phase compensation to correct the read and received signals. A positive factor is applied to the phase shifter and a closed loop correction factor is applied to the program. transmitting-receiving device characterized in that it comprises controller means for providing an attenuator capable of communication module. 2. The EEPROM stores all input during module calibration for long term corrections. Claim 1, wherein the open loop correction means of the control device stores an open loop correction term of Send-receive module as described. 3. The first set of terminals is arranged such that the transmitting position connects the transmitter input terminal to the phase shifter. the output of the low noise amplifier is connected to the input of the two terminals connected to the input of the transmitter and the output of the buffer amplifier to the transmitter input terminal; This is a pole double-throw switch and functions as a receiver output terminal in this mode. The transmitting-receiving module according to item 1. 4. The first set of terminals is arranged such that the transmitting position connects the transmitter input terminal to the phase shifter. the output of the low noise amplifier is connected to the input of the two terminals connected to the input of the transmitter and the output of the buffer amplifier to the transmitter input terminal; This is a pole double-throw switch and functions as a receiver output terminal in this mode. Transmission-reception module according to item 2. 5. The programmable attenuator is for receiving analog correction information from the controller. analog attenuator and a digital complement from said control device connected in series with it. 4. The transmitter-receiver according to claim 3, comprising a digital attenuator for receiving positive information. module. 6. The power output amplifier includes a predrive amplifier, a drive amplifier, and an end of the second set. The circuit passes from the transmission terminal of the child through the set of terminals of the fourth switching means. and a power amplifier connected in series with the fourth switching means. It is a three-pole three-throw switch, with fixed terminals connected to said circulator and each connected to one of the outputs of said predriver, driver, and power amplifier. It has three movable terminals, the connection to the power amplifier is in series, the driver and Connections to the predrive amplifier and predrive amplifier are made through an additional single-pole double-throw switch. a single-pole double-throw switch and the control device for switching the fourth switching means; EEPROM, which is generated by multiple T/R modules used. The power amplifier or 6. The transmission of claim 5, wherein the power amplifier and the drive amplifier are switched out of series. Communication-receiving module. 7. The control device switch on the one hand controls the predriver, the driver and the power amplifier. One side is connected to a bias connection, the other side is connected to two or more different power levels, and the Reduce bias when it is possible to further reduce power consumption and temperature again changing the bias of the bias connection and switching the controller switch; 7. A transmitter-receiver module as claimed in claim 6, connected to controller means. 8. selectively disconnecting said one or more amplifiers out of series if not needed; a plurality of amplifiers each having a bias connection connected in series with means for switching; When it is possible to reduce power consumption and temperature, it is possible to reduce power supply and bias. An amplifier comprising switching means connected between said bias connections. 9. It consists of a pre-drive amplifier, a drive amplifier, and a power amplifier. For example, the power amplifier or the drive amplifier and the power amplifier are removed from series. said predriver, driver, and power increaser are connected in series with means for switching such that said predriver, driver, and power Bias connections in amplifiers and buffers when possible to reduce power consumption and temperature. switching means connected between the power supply and said bias connection to reduce bias An amplifier consisting of 10. The power output amplifier is B class which further increases efficiency and reduces temperature. 2. A transmitting-receiving module as claimed in claim 1. 11. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 7. A transmitting-receiving module according to claim 6, which is of B class. 12. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 8. The transmitting-receiving module according to claim 7, being of B class. 13. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 9. An amplifier as claimed in claim 8, which is of B class. 14. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 10. The amplifier of claim 9, which is a B-class amplifier that reduces . 15. The power output amplifiers can be multiplexed to further increase efficiency and reduce temperature. Transmit-receive module according to claim 10, constructed by functional self-aligning gating method. Le. 16. the T/R switching means, the phase shift device, the programmable The attenuator and buffer amplifier further increase efficiency and reduce temperature. 11. The transmitter-receiver according to claim 10, constructed by a multifunctional self-aligning gate method for module. 17. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 11. The method of claim 11 is constructed by a multifunctional self-aligning gate method to reduce the or 12. 18. The T/R switching means, the phase shift device, and the analog attenuator , the digital attenuator, and the buffer amplifier further increase efficiency and reduce temperature. 11. The method of claim 11 is constructed by a multifunctional self-aligning gate method to reduce the or 12. 19. The predriver, driver, and power amplifier further increase efficiency and reduce temperature. 14. The method of claim 13 is constructed by a multifunctional self-aligning gate method to reduce the or 15.