JPH0550254U - Constant flow leak valve for use in semiconductor manufacturing equipment material gas reactor - Google Patents

Abstract

(57) [Summary] [Object] The present invention provides a valve used in a vacuum generator of a material gas reaction path for a semiconductor manufacturing apparatus, which prevents backflow of the atmosphere and does not cause particles when passing through the valve. Is provided. An orifice having an inner diameter of 0.2 to 1 mm, which communicates the inlet and the outlet, is provided between an inlet provided at one end of the main body and an outlet provided at the other end of the main body. A valve seat having a valve port communicating with the inflow port is provided on the upper surface of the central part of the main body, and a valve chamber having a recess communicating with the outflow port is provided around the valve seat, and a valve rod is provided on the upper part of the main body. In the material gas reaction furnace for semiconductor manufacturing equipment, which is provided with a lid in which the upper and lower parts are mounted so as to be lifted It is a constant flow leak valve for use.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a diaphragm type constant flow rate leak valve used in a vacuum generator of a material gas reaction path for semiconductor manufacturing equipment.

[0002]

[Prior Art]

 As shown in FIG. 5, the vacuum generator of the material gas reaction path for the semiconductor manufacturing apparatus causes an inert gas to flow in the straight part of the T-shaped pipe to make the inside of the reaction furnace connected to the branch pipe a vacuum state. Normally, a needle valve is used as a valve provided upstream of the straight portion of the T-shaped pipe. However, if the valve is closed when the reactor is not used, the atmosphere will flow back into the reactor from the downstream side, and the residual gas in the reactor will react with the atmosphere to produce products, which will corrode the inside of the reactor. For this reason, the needle valve was opened by a certain opening to constantly flow the gas through the vacuum generator so that the atmosphere did not flow back into the reactor.

[0003]

[Problems to be solved by the device]

 However, in the above-mentioned conventional technique, it is difficult to open the needle valve at a constant opening degree, and depending on the operation method, the needle valve may be opened too much or may be closed. If it is opened too much, a large amount of inert gas will flow out for a long time, and if it is closed or the opening is too small, the atmosphere will flow back into the reactor.

Further, in such a semiconductor manufacturing apparatus, if a particle such as a minute metal powder is mixed, a serious trouble occurs, but in the conventional needle valve, friction between the valve seat and the valve body and gas passage in the valve occur. Since the excess area is large, particles are likely to be generated when the gas passes through the valve, and there is a risk that particles will be mixed into the reaction furnace. The present invention solves the above problems as a valve used in a vacuum generator of a material gas reaction path for semiconductor manufacturing equipment, and provides a valve that prevents backflow of the atmosphere and does not generate particles when passing through the valve. Is.

[0005]

[Means for Solving the Problems]

 The gist of the present invention is an orifice having an inner diameter of 0.2 to 1 mm, which connects the inlet and the outlet between an inlet provided at one end of the body and an outlet provided at the other end of the body. A valve seat having a valve opening communicating with the inlet, and a valve chamber having a recess communicating with the outlet around the valve seat on the upper surface of the central portion of the main body. A semiconductor manufacturing device characterized in that a lid on which a valve rod is mounted so as to be lifted up and down is provided, and a diaphragm whose central portion is bulged upward with a peripheral portion being closely sandwiched between the main body and the lid is provided. A constant flow leak valve for use in a furnace.

[0006]

[Action]

 For the vacuum generator of the material gas reactor in the semiconductor manufacturing equipment, it is appropriate to always discharge it in consideration of safety so that the atmospheric air does not flow backward, safety of inert gas, workability of cylinder replacement, etc. It is said that a desirable gas flow rate is 3 L to 10 L per minute. In the valve of the present invention, since the inner diameter of the orifice is 0.2 to 1 mm, the proper flow rate of the above gas can always be flown even if the valve port is closed.

Further, since the valve chamber is partitioned by the diaphragm, the passage area of the gas passing through the inside of the valve is minimum, and the gas fluid does not infiltrate into an extra portion, so that the generation of particles is also minimized. The problem of particles does not occur.

[0008]

【Example】

 FIG. 1 shows an embodiment of the present invention. A main body 1 and a lid 2 fixed to the main body 1, a valve rod 3 which is screwed into a female screw in the lid 2 and slides up and down, and a valve rod 3 are shown. It consists of a handle 4 to rotate, a diaphragm 5 fixed to the upper surface of the body 1, a diaphragm retainer 6 to fix the diaphragm 5, and a thrust button 7 provided between the lower surface of the valve rod 3 and the upper surface of the diaphragm. A valve chamber 18 is formed between the upper surface and the diaphragm 5 so that the gas fluid does not enter the lid 2 above the valve chamber 18.

The valve chamber 18 has a valve seat 13 having a seat 19 mounted in the center of the main body 1, and an annular recess 14 is provided around the outer periphery of the valve seat 13 to provide an outlet 12 on the side of the main body 1. Is in communication with. Further, a valve port 15 is provided at the center of the valve seat 13 and communicates with the inflow port 11 on the side of the main body 1. An orifice 16 drilled from the inflow port 11 is provided at a portion where the inflow port 11 and the outflow port 12 face each other. The inner diameter of this orifice 16 is 0.35 mm.

FIG. 2 shows a second embodiment of the present invention, and the configuration of the upper part except the main body 1 is the same as that of the first embodiment. In the case of this embodiment, the orifice 16 is provided with an orifice having an inner diameter of 0.5 mm which communicates with the inflow port 11 from the annular recess 14 on the upper surface of the main body 1. In this embodiment, the gas flows from the inflow port 11 through the orifice 16 to the annular recess 14 and from the annular recess 14 to the outflow port 12.

3 and 4 show a third embodiment of the present invention, in which a valve seat member 8 having a seat 18 is fitted on the upper surface of the main body 1 and an inlet 11 of the main body 1 is fitted. The partition member 9 shown in FIG. 4 is fitted between the inlet port communicating with the outlet port and the outlet port communicating with the outlet port 12 to connect the inlet port and the outlet port. It is divided. Further, the partition member 9 is provided with an orifice 96 having a minimum inner diameter of 0.4 mm in a portion communicating with the inflow port and the outflow port. In the case of this embodiment, the orifice 96 is formed by the partition member 9 different from the main body 1, so that the orifice 96 can be easily machined and a precise orifice hole can be provided. It is also easy to prepare partition members 9 having different inner diameters of the orifice 96 and replace it with a desired orifice 96. As another embodiment, the orifice member having the orifice 96 may be replaceably fitted to the partition member. In this case, the desired orifice 96 can be obtained by replacing the orifice member with various orifices. The partition member 9 can be obtained.

In the valve opening / closing mechanisms of the first to third embodiments, the handle 4 is operated to rotate the valve rod 3, and the diaphragm is inserted via the thrust button 7 between the valve rod 3 and the diaphragm 5. 5 is pressed. When the diaphragm 5 is separated from the valve seat 13 as shown in the figure, the gas is flown from the inflow port 11 through the valve chamber 18 to the outflow port 12 while the valve is open, and part of the gas passes through the orifices 16 and 96. Then, it flows from the inflow port 11 to the outflow port 12.

When the valve is in the closed state, the diaphragm 5 contacts the sheet 19 of the valve seat to close the valve port 15, but the gas passes through the orifices 16 and 96 and flows from the inflow port 11 to the outflow port 12. The desired flow rate flows to a certain amount. Therefore, the flow rate passing through the orifice is related to the gas pressure, but within the normal pressure range, the inner diameter of the orifice is 0.2 to 1 mm. With this orifice, the flow rate of gas is 3 L to 10 L per minute. It is possible to flow at a flow rate. If the inner diameter of the orifice is larger than 1 mm, unnecessary gas flows, and if the inner diameter of the orifice is smaller than 0.2, the required gas flow rate cannot be obtained within the normal gas pressure range.

[0013]

[Effect of the device]

 As described above, the present invention is used as a valve for a vacuum generator of a semiconductor manufacturing equipment material gas reaction furnace, and can flow an appropriate inert gas into the reaction furnace even if the valve is closed. As a result, it is possible to provide a highly safe valve without damaging the reactor and without the generation of particles.

[Brief description of drawings]

1 is a sectional view showing a first embodiment of the present invention. 2 is a sectional view showing a second embodiment of the present invention. 3 is a sectional view showing a third embodiment of the present invention. 4 is a sketch drawing showing the partition member 9 of FIG. 5 is a system diagram showing a vacuum generator of the semiconductor manufacturing apparatus material gas reaction furnace.

[Explanation of symbols]

 1 Main Body 2 Lid 3 Valve Bar 4 Handle 5 Diaphragm 6 Diaphragm Presser 7 Thrust Button 8 Valve Chamber 9 Partition Member 11 Inlet 12 Outlet 13 Valve Seat 14 Annular Recess 16, 96 Orifice 18 Valve Chamber

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoichiro Kazama, 2 Daifuku, Kuwana City, Mie Prefecture, Hitachi Metals Co., Ltd. Kuwana Plant (72) Hideki Kawamura 16th Harima-cho, Kako-gun, Hyogo Teisan Stock Company Equipment Business Headquarters (72) Inventor Yoshihiro Sano 16 Harima-cho, Kako-gun, Hyogo Prefecture Teisan Stock Company Equipment Business Headquarters

Claims (1)

[Scope of utility model registration request] 1. An orifice having an inner diameter of 0.2 to 1 mm which connects the inlet and the outlet between an inlet provided at one end of the body and an outlet provided at the other end of the body. A valve seat having a valve opening communicating with the inlet is provided on the upper surface of the central portion of the main body, and a valve chamber having a recess communicating with the outlet is provided around the valve seat. A gas reactor for semiconductor manufacturing equipment, characterized in that a lid having a valve rod that can be lifted up and down is provided, and a diaphragm whose peripheral portion is closely sandwiched between the main body and the lid and whose central portion is bulged upward is provided. Constant flow leak valve for use in.