JPH0547734A - Cleaning apparatus - Google Patents

Cleaning apparatus

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Publication number
JPH0547734A
JPH0547734A JP23227991A JP23227991A JPH0547734A JP H0547734 A JPH0547734 A JP H0547734A JP 23227991 A JP23227991 A JP 23227991A JP 23227991 A JP23227991 A JP 23227991A JP H0547734 A JPH0547734 A JP H0547734A
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cleaning
light
processed
characterized
semiconductor
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JP23227991A
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Japanese (ja)
Inventor
Takayuki Imaoka
Tadahiro Omi
孝之 今岡
忠弘 大見
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Tadahiro Omi
忠弘 大見
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Abstract

PURPOSE:To effectively remove impurities on a surface of an optical processing element by incorporating a function of shielding a light in a part of a member to be processed, in contact with chemicals or ultrapure water to be used for cleaning in an apparatus for cleaning or drying the member to be processed. CONSTITUTION:A cleaning vessel 3 for cleaning semiconductor 2 is mounted in a light shielding vessel 1 for shielding an external light. Nitrogen gas 6 is supplied from a nitrogen gas supply unit 4 to the vessel 1 through a tube 5. On the other hand, ultrapure water 9 in which dissolved oxygen is removed, is supplied from an ultrapure water supply unit 7 to the vessel 3 mounted in the vessel 1 through a tube 8. Further, the ultrapure water after the semiconductor 2 is cleaned, is fed to a waste water processor 12 through a waste water reservoir 10 and a piping 11 to be processed. The gas 6 substituted for the atmosphere in the vessel 1 is discharged through a discharge valve 13 and a piping 14. Thus, impurities on the surface of a member to be processed can be effectively removed without adherence of the impurities due to excitation of electrons or holes by a light.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、例えば、半導体ウェハのような被処理体を、付着物の完全除去状態にすべく洗浄処理を行う工程において、前記被処理体を、洗浄または乾燥するための洗浄装置に関わる。 BACKGROUND OF THE INVENTION The present invention is, for example, the object to be processed such as a semiconductor wafer, in the step of the cleaning process in order to perform the complete removal condition of deposit, the object to be processed, for cleaning or drying involved in cleaning equipment.

【0002】 [0002]

【従来の技術】従来、半導体の洗浄は例えば以下の技術を用いて行われている。 Conventionally, semiconductor cleaning is performed using the following techniques, for example. すなわち、硫酸過酸化水素水混合溶液、塩酸過酸化水素水混合溶液、アンモニア過酸化水素水混合溶液、フッ酸過酸化水素水溶液等の薬液、および超純水を組み合わせて用い、半導体表面の原子レベルでの平坦性を損なうことなく、半導体表面に付着している、有機物、微粒子、金属、自然酸化膜を除去する技術である。 In other words, sulfuric acid hydrogen peroxide mixture, hydrochloric acid hydrogen peroxide mixture, ammonia hydrogen peroxide mixture, used in combination chemical such as hydrofluoric acid aqueous solution of hydrogen peroxide, and ultrapure water, atomic level of the semiconductor surface without impairing the flatness in, attached to the semiconductor surface, organics, particulates, metals, it is a technique for removing a native oxide film. たとえば、下記に示す工程を用いる。 For example, using the process shown below. (1)硫酸過酸化水素洗浄(硫酸:過酸化水素=4:1、体積比) 5分 (2)超純水洗浄 5分 (3)硫酸過酸化水素洗浄(硫酸:過酸化水素=4:1、体積比) 5分 (4)超純水洗浄 5分 (5)フッ酸過酸化水素洗浄(フッ酸0.5%、過酸化水素10%) 1分 (6)超純水洗浄 5分 (7)硫酸過酸化水素洗浄(硫酸:過酸化水素=4:1、体積比) 5分 (8)超純水洗浄 10分 (9)フッ酸過酸化水素洗浄(フッ酸0.5%、過酸化水素10%) 1分 (10)超純水洗浄 10分 (11)アンモニア過酸化水素洗浄 (アンモニア水:過酸化水素:超純水=0.05:1:5、体積比) 10分 (12)超純水洗浄 10分 (13)高温超純水浸漬(約90℃) 10分 (14)フッ過酸化水素洗浄(フッ酸0.5%、過酸化水素10%) 1分 (15)超純水洗浄 10分 (16)塩酸過酸化水素洗浄 (塩酸:過酸化水素:超純水=1:1:6、体 (1) sulfuric acid hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide = 4: 1, by volume) 5 min (2) ultrapure water cleaning 5 minutes (3) sulfate hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide = 4: 1, by volume) 5 min (4) ultrapure water cleaning 5 minutes (5) hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, 10% hydrogen peroxide) 1 minute (6) ultrapure water cleaning 5 minutes (7 ) sulfuric acid hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide = 4: 1, by volume) 5 min (8) ultrapure water cleaning 10 minutes (9) hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, hydrogen peroxide 10 %) 1 min (10) ultrapure water cleaning 10 minutes (11) ammonia hydrogen peroxide cleaning (ammonia water: hydrogen peroxide: ultra-pure water = 0.05: 1: 5, by volume) 10 minutes (12) of ultrapure water It washed 10 minutes (13) high-temperature ultra pure water immersion (about 90 ° C.) 10 minutes (14) hydrofluoric hydrogen peroxide cleaning (hydrofluoric acid 0.5%, 10% hydrogen peroxide) 1 minute (15) ultrapure water cleaning 10 minutes ( 16) hydrochloride Hydrogen peroxide washed (hydrochloric acid: hydrogen peroxide: ultra-pure water = 1: 1: 6, the body 積比) 10分 (17)高温超純水浸漬(約90℃) 10分 (18)超純水洗浄 10分 (19)フッ酸過酸化水素洗浄(フッ酸0.5%、過酸化水素10%) 1分 (20)超純水洗浄 10分 (21)窒素ガスブロー乾燥 2分 Product ratio) 10 minutes (17) high-temperature ultra pure water immersion (about 90 ° C.) 10 minutes (18) ultrapure water cleaning 10 minutes (19) hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, 10% hydrogen peroxide) 1 min (20) ultrapure water cleaning 10 minutes (21) nitrogen gas blow dried for 2 minutes

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、前記従来技術には、少なくとも次の二つの問題点がある。 [SUMMARY OF THE INVENTION However, the in the prior art, there are at least following two problems.

【0004】まず、前記従来の半導体洗浄技術は、全ての工程を照明の下で行う、あるいは、少なくとも遮光の配慮のない環境下で行うため、洗浄または乾燥の被対象物である半導体は、照射される光の持つエネルギーで励起される。 [0004] First, the conventional semiconductor cleaning technique is carried out under lighting all the steps, or, for performing in an environment friendly without at least shading, a semiconductor is the subject matter of the washing or drying, irradiated It is excited by the energy of the light. その時、光を遮断した環境下における半導体と較べて、半導体内の自由電子および正孔(ホール)の数が増加する。 Then, as compared with the semiconductor in an environment that blocks light, the number of free electrons and holes in a semiconductor (hole) increases. 例えば、シリコンに例えばホウ素(B) For example, silicon, for example, boron (B)
を添加したp型領域を持つ半導体を光照射の有る環境下で洗浄した場合に、光により励起された電子が、洗浄液中の金属イオン(正の荷電を持つ)と電荷交換し、金属が半導体表面に吸着してしまう。 If washing with an environment there the the light irradiation semiconductor having a p-type region with the addition of electrons excited by light, (a positively charged) metal ions in the washing liquid and to charge exchange, metal semiconductor become adsorbed on the surface. 一方、例えばシリコンに例えばリン(P)を添加したn型領域を持つ半導体を、光照射の有る環境下で洗浄した場合に、光により励起された正孔(ホール)が、洗浄液中の陰イオン(負の荷電を持つ)と電荷交換し、陰イオンが半導体表面に吸着してしまう。 On the other hand, a semiconductor having n-type region with the addition of for example phosphorus (P), for example, silicon, in the case of washing in an environment having the light irradiation, holes excited by light (holes), anions in the washing solution (negative with charged) and charge exchange, anion will be adsorbed on the semiconductor surface.

【0005】さらに、前記従来の半導体洗浄技術は、少なくとも超純水洗浄を不活性なガス雰囲気では行っていないため、雰囲気中の酸素が超純水中に溶解し、被処理体である半導体表面を酸化することで、超純水洗浄中に半導体表面に半導体の特性を劣化させる自然酸化膜が成長してしまう。 [0005] Further, the conventional semiconductor cleaning technology, because it is not done in an inert gas atmosphere at least ultrapure water cleaning, oxygen in the atmosphere is dissolved in ultrapure water, the semiconductor surface as an object to be processed by oxidizing a natural oxide film deteriorates the semiconductor characteristics in the semiconductor surface during the ultrapure water cleaning will grow. しかも、自然酸化膜が成長する際に、半導体例えばシリコンよりも酸化されやすい金属例えば、 Moreover, when the native oxide film grows, metals such easily oxidized than a semiconductor such as silicon,
鉄(Fe)、アルミニウム(Al)、ナトリウム(N Iron (Fe), aluminum (Al), sodium (N
a)等は、金属酸化物を生成して、自然酸化膜中に取り込まれることで、半導体表面を金属汚染してしまう。 a) or the like, to produce a metal oxide, that is incorporated into the natural oxide film, thereby a semiconductor surface metal contamination. すなわち、半導体洗浄を不活性雰囲気で行わない場合、それ自体半導体の特性を劣化させる自然酸化膜の形成および自然酸化膜中への金属酸化物の取り込みによる金属汚染の原因となる。 That is, if not carried out in an inert atmosphere semiconductor cleaning, causing metal contamination due to the incorporation of metal oxide formation and the natural oxide film of a natural oxide film degrading the characteristics of its own semiconductor.

【0006】本発明は、被処理体である半導体等に対し、半導体等の表面の不純物を効果的に除去し、半導体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせず、表面に自然酸化膜等の変質を起こさせない洗浄装置を提供することを目的とする。 The present invention, with respect to a semiconductor such as an object to be processed, impurities were effectively removed the surface of the semiconductor such as to put the attachment of impurities from the excitation of electrons or holes caused by light (holes) in the semiconductor surface let not, and to provide a cleaning apparatus which does not cause deterioration of such a natural oxide film on the surface.

【0007】 [0007]

【課題を解決するための手段】本発明の洗浄装置は、被処理体を洗浄または乾燥する装置において、少なくとも、被処理体が、洗浄に用いられる薬液あるいは超純水に接する部分に、光を遮断する手段を設けたことを特徴とする。 Cleaning apparatus of the present invention SUMMARY OF THE INVENTION, there is provided an apparatus for washing or drying the object to be processed, at least, the target object is, the drug solution or the portion in contact with the ultra-pure water used for washing, light characterized in that a means for blocking.

【0008】 [0008]

【作用】本発明の洗浄装置は、被処理体を洗浄または乾燥する装置において、少なくとも、半導体が、洗浄に用いられる薬液あるいは超純水に接する部分に、光を遮断する機能を備えたため、被処理体である半導体が光の持つエネルギーによって励起されることがない。 [Action] washing apparatus of the present invention, there is provided an apparatus for washing or drying the object to be processed, at least, since the semiconductor is, in the chemical or the portion in contact with the ultra-pure water used for washing, having a function of blocking light, the never be processed semiconductor is excited by the energy of the light. その結果、被処理体である半導体に対し、半導体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせずに、被処理体表面の不純物を効果的に除去することができる。 As a result, with respect to the semiconductor as an object to be processed, without causing impurity deposition from excitation of electrons or holes caused by light (holes) in the semiconductor surface, it can be effectively removed impurities of the surface of the object it can. さらに、本発明の洗浄装置は、内部雰囲気を置換可能な容器と、前記容器内に不活性なガスを供給する機能と、溶存酸素を低減した超純水を供給する機能を備えたため、被処理体表面に自然酸化膜等の変質を起こすことなく被処理体表面の不純物を効果的に除去することができる。 Further, the cleaning apparatus of the present invention, since having a replaceable container interior atmosphere, a function of supplying an inert gas into the container, a function of supplying ultrapure water with reduced dissolved oxygen, treated it can effectively remove impurities of the object surface without the body surface causing deterioration such as a natural oxide film.

【0009】 [0009]

【実施例】図1は、本発明の実施例を示すものである。 DETAILED DESCRIPTION FIG. 1 shows an embodiment of the present invention.

【0010】外部からの光を遮断し、内部雰囲気を置換可能な遮光容器1の内部に、被処理体である半導体2を洗浄するための洗浄容器3が設置されている。 [0010] block light from the outside, the inside of the replaceable shielding container 1 The inside atmosphere, the cleaning container 3 for cleaning a semiconductor 2 as an object to be processed is placed.

【0011】前記遮光容器1には、不活性ガス(たとえば窒素ガス)供給装置4から前記窒素ガス供給装置4に接続された窒素ガス供給配管5を介して、窒素ガス6が供給されるよう構成されている。 [0011] The light-shielding container 1 through a nitrogen gas supply pipe 5 connected to the nitrogen gas supply device 4 from the inert gas (e.g. nitrogen gas) supply device 4, as a nitrogen gas 6 is supplied configuration It is.

【0012】一方、前記遮光容器内に設置された洗浄容器には、水中の溶存酸素を除去する機能を有する超純水供給装置7から、前記超純水供給装置7に接続された、 Meanwhile, the installation has been cleaned container within the light-shielding container, the ultrapure water feeder 7 has a function of removing water dissolved oxygen, which is connected to the ultrapure water feeder 7,
超純水供給配管8を介して、溶存酸素を除去された超純水9が供給されるよう構成されている。 Through the ultrapure water supply pipe 8, ultrapure water 9 dissolved oxygen is removed is configured to be supplied.

【0013】さらに、前記半導体2を洗浄した後の超純水は、廃液受け容器10、廃液送液配管11を介して廃液処理装置12に送られ処理されるよう構成されている。 Furthermore, the semiconductor 2 ultrapure water after cleaning the can, waste receptacle 10, is configured via a waste liquid feed pipe 11 is sent to the waste liquid treatment apparatus 12 and processed.

【0014】また、前記遮光容器内雰囲気を置換した窒素ガス6は、ガス排気バルブ13、ガス排気配管を介して排気されるよう構成されている。 Further, the nitrogen gas 6 a shielding vessel atmosphere was replaced, the gas exhaust valve 13, and is configured to be exhausted through the gas exhaust pipe.

【0015】本実施例は、上記のように構成されているので、被処理体である半導体2を、溶存酸素を除去した超純水9で洗浄する際に、前記半導体に外部からの光が照射されることがなく、従って、前記半導体2が光の持つエネルギーで励起されることがなく、その結果、被処理体である半導体に対し、半導体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせずに洗浄を行うことができる。 [0015] The present embodiment, which is configured as described above, the semiconductor 2 as an object to be processed, when cleaning with ultrapure water 9 from which dissolved oxygen had been removed, the light from the outside to the semiconductor without being irradiated, therefore, the semiconductor 2 is that there is no to be excited by energy of light, as a result, to the semiconductor as an object to be processed, electrons or holes caused by light in the semiconductor surface (hole) it can be cleaned without causing impurities adhering derived excitation.

【0016】また、本実施例は、上記のように構成されているので、被洗浄体である半導体2を、溶存酸素を除去した超純水9で洗浄する際に、前記遮光容器1内の洗浄雰囲気から前記超純水9の中に酸素ガスが溶解することがなく、従って被処理体である半導体2の表面が酸化されることがない。 Further, this embodiment, which is configured as described above, the semiconductor 2 is a cleaning object, when cleaning with ultrapure water 9 from which dissolved oxygen had been removed, of the shielding container 1 wherein the cleaning atmosphere without oxygen gas is dissolved in ultrapure water 9, thus the surface of the semiconductor 2 is prevented from being oxidized as an object to be processed. その結果、半導体表面に自然酸化膜等の変質を起こすことなく洗浄を行うことができる。 As a result, it is possible to perform cleaning without causing deterioration such as a natural oxide film on the semiconductor surface.

【0017】表1は、図1に示す装置を用いて、5枚のシリコンウェハ(n型100)を洗浄した後のシリコンウェハ表面の付着金属と自然酸化膜厚を、光照射の有無、窒素ガスによる雰囲気の置換有無とに分けて測定した結果である。 [0017] Table 1, using the apparatus shown in FIG. 1, the natural oxide film thickness and the deposition metal five silicon wafer (n-type 100) silicon wafer surface after cleaning the presence or absence of light irradiation, nitrogen is a result of measurement is divided into the replacement presence of atmospheric due to gas.

【0018】遮光容器1の容積は20l、遮光容器1に供給する窒素ガス流量は20l/min、窒素ガス中の酸素濃度は1ppb以下、窒素ガス中の水分濃度は1ppb The volume of the shielding container 1 20l, nitrogen gas flow rate supplied to the light-shielding container 1 20l / min, the oxygen concentration in the nitrogen gas is 1ppb or less, the water concentration in nitrogen gas 1ppb
以下とした。 It was following. また、洗浄容器3の容積は0.5l、洗浄容器3に供給する超純水流量は3l/min、超純水中の溶存酸素濃度は10ppb、超純水中の銅イオン(C Also, the volume of the washing vessel 3 0.5 l, ultra pure water flow rate supplied to the washing container 3 3l / min, concentration of dissolved oxygen in ultrapure water is 10 ppb, ultrapure water of copper ions (C
2+ )濃度は1ppt、超純水中の鉄イオン(Fe 2+ u 2+) concentration is 1ppt, ultra-pure water of iron ions (Fe 2+)
濃度は1pptとした。 Concentration was 1ppt. また超純水洗浄時間は60分とした。 The ultra-pure water cleaning time was 60 minutes.

【0019】 [0019]

【表1】 [Table 1] 表1が示すように、従来の半導体洗浄法である被処理体である半導体に光照射があり、洗浄を行う雰囲気を不活性ガス(例えば窒素ガス)で 置換しないで 半導体を洗浄した場合、洗浄後のシリコンウェハ表面には、銅、 As Table 1 shows, there is a semiconductor light irradiation as an object to be processed is a conventional semiconductor cleaning method, when washing the semiconductor atmosphere for cleaning without replaced with an inert gas (e.g. nitrogen gas), washed the silicon wafer surface after copper,
鉄といった金属不純物が検出され、また、自然酸化膜の形成も検出された。 Metal impurities are detected such as iron, also detected the formation of the natural oxide film. 一方、本発明の、被処理体である半導体への光を遮断し、洗浄を行う雰囲気を不活性ガス(例えば窒素)で充分置換して半導体を洗浄した場合、 On the other hand, the present invention, when cleaning a semiconductor with sufficiently replaced with the exclusion of light to the semiconductor as an object to be processed, the atmosphere for cleaning inert gas (e.g. nitrogen),
洗浄後のシリコンウェハ表面には、銅、鉄といった金属不純物は検出されず、自然酸化膜の形成も検出されない。 The silicon wafer surface after cleaning, copper, metal impurities such as iron will not be detected, not detected the formation of the natural oxide film.

【0020】また、、被処理体である半導体への光を遮断しても、洗浄を行う雰囲気を不活性ガス(例えば窒素)で充分置換しなければ、洗浄後のシリコンウェハ表面には、自然酸化膜の成長と共に、シリコンより酸化されやすい鉄が付着していることが分かった。 Further even if the exclusion of light to ,, as an object to be processed semiconductor, unless sufficiently replacing the atmosphere of cleaning with an inert gas (e.g. nitrogen), the silicon wafer surface after cleaning, Nature with the growth of the oxide film, easily oxidized than silicon iron it was found to be adhered.

【0021】以上の結果は、本実施例の洗浄装置を用いることにより、洗浄の被処理体である半導体表面に、半導体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせず、半導体表面に自然酸化膜等の変質を起こさせない洗浄が可能になったことを示している。 [0021] These results, by using the cleaning apparatus of the present embodiment, the semiconductor surface as an object to be processed in the washing, to put the attachment of impurities from the excitation of electrons or holes caused by light (holes) in the semiconductor surface let not indicate that it is now possible cleaning does not cause deterioration of such a natural oxide film on the semiconductor surface.

【0022】本実施例は、遮光が可能な容器1を用いて、被処理体対して遮光を行ったが、遮光は、洗浄を行う部屋の内部全体の光を遮断することで行っても良く、 The present embodiment uses the light-shielding capable container 1, were subjected to shading for the object to be processed, shading may be performed by blocking the light of the entire interior of the room in which the washing ,
あるいは他の遮光手段を用いても良い。 Or it may use other light shielding means. また、本実施例では、窒素ガスを用いて説明したが、窒素ガスと同様に被処理体に対して不活性であるアルゴンガスを用いても良く、他の不活性ガスを用いても同様の効果が得られる。 Further, in the present embodiment has been described using nitrogen gas, may be used an argon gas which is inert to the object to be processed similarly to the nitrogen gas, the same be another inert gas effect can be obtained. さらに、本実施例は、超純水洗浄工程を例にとって説明したが、超純水洗浄後の乾燥工程においても、遮光、および不活性雰囲気で、洗浄した半導体を乾燥することで、より不純物付着あるいは自然酸化膜の形成を効果的に防ぐことが可能になる。 Furthermore, this embodiment has been described ultrapure water cleaning process as an example, even in the drying step after the ultrapure water cleaning, shading, and in an inert atmosphere, followed by drying the washed semiconductor, more impurities deposited Alternatively it is possible to effectively prevent the formation of a natural oxide film. もちろん、半導体洗浄のその他の工程においても遮光、および不活性雰囲気で、 Of course, the light shielding in the other steps of the semiconductor cleaning, and in an inert atmosphere,
洗浄した半導体を乾燥することで、より不純物付着あるいは自然酸化膜の形成を効果的に防ぐことが可能になる。 By drying the washed semiconductor, it is possible to prevent a more impurity deposition or formation of a natural oxide film effectively.

【0023】 [0023]

【発明の効果】以上説明したように、請求項1に係わる発明によれば、被処理体を洗浄または、乾燥する装置において、少なくとも、被処理体が、洗浄に用いられる薬液あるいは超純水に接する部分に、光を遮断する機能を持たせたので、被処理体である半導体等が光の持つエネルギーによって励起されることがなく、その結果、被処理体である半導体等に対し、被処理体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせずに、被処理体表面の不純物を効果的に除去することが可能な洗浄装置が得られる。 As described in the foregoing, according to the invention according to claim 1, in the cleaning or devices for drying the object to be processed, at least, the target object is, the drug solution or ultrapure water used for washing a portion in contact, so have a function of blocking light, without a semiconductor such as an object to be processed is excited by energy of light, as a result, to the semiconductor or the like as an object to be processed, the processed without causing impurity deposition from excitation of electrons or holes caused by light (holes) on the body surface, effectively cleaning device capable of removing impurities of the surface of the object is obtained.

【0024】さらに、請求項2に係わる発明によれば、 Furthermore, according to the invention according to claim 2,
被処理体を洗浄または、乾燥する装置において、内部雰囲気を置換可能な容器と、前記容器内に不活性なガスを供給する機能と、溶存酸素を低減した超純水を供給する機能を備えたため、被処理体表面に自然酸化膜等の変質を起こすことなく被処理体表面の不純物を効果的に除去することが可能な洗浄装置が得られる。 Workpiece cleaning or, in an apparatus for drying, because with a replaceable container interior atmosphere, a function of supplying an inert gas into the container, a function of supplying ultrapure water having reduced dissolved oxygen effectively cleaning apparatus capable of removing obtain an impurity of the object surface without causing deterioration such as a natural oxide film on the surface of the object.

【0025】請求項3に係わる発明によれば、前記内部雰囲気を置換可能な容器内に、少なくとも、被処理体が、洗浄に用いられる薬液あるいは超純水に接する部分を設置したため、被処理体表面に自然酸化膜等の変質を起こすことなく被処理体表面の不純物を効果的に除去することが可能な洗浄装置が得るのにより効果的である。 According to the invention according to claim 3, the inner atmosphere replaceable container with at least, for the object to be processed has a chemical or a portion in contact with the ultra-pure water used for washing is placed, the object to be processed it is effectively effective in cleaning device obtained that is capable of removing impurities of a surface of an object without causing deterioration such as a natural oxide film on the surface.
請求項4に係わる発明によれば、前記内部雰囲気を置換可能な容器内に、少なくとも、被処理体を、超純水による最終洗浄および付着した超純水を乾燥する部分を設置したため被処理体表面に自然酸化膜等の変質を起こすことなく被処理体表面の不純物を効果的に除去することが可能な洗浄装置が得るのにより効果的である。 According to the invention according to claim 4, wherein the internal atmosphere substitutable vessel, at least, the object to be processed, ultra-pure water according to the final washing and adherent ultra-pure water for the installed portion of drying the object to be processed it is effectively effective in cleaning device obtained that is capable of removing impurities of a surface of an object without causing deterioration such as a natural oxide film on the surface.

【0026】請求項5に係わる発明によれば、前記不活性なガスを、窒素としたため、ランニングコストダウンに効果的である。 According to the invention according to claim 5, the inert gas, since the nitrogen is effective running costs down.

【0027】請求項6に係わる発明によれば、前記不活性なガスを、アルゴンとしたため、窒素と同様安価で入手しやすく、ランニングコストダウンに効果的である。 According to the invention according to claim 6, the inert gas, due to the argon, readily available with nitrogen and similar inexpensive, effective in running costs down.

【0028】請求項7に係わる発明によれば、前記活性なガス中の酸素濃度が1ppm以下、前記溶存酸素を低減した超純水中の溶存酸素が、50ppb以下としたため、被処理体表面に自然酸化膜等の変質を起こすことなく被処理体表面の不純物を効果的に除去することが可能な洗浄装置が得るのにより効果的である。 According to the invention according to claim 7, the oxygen concentration of the active gas is 1ppm or less, the dissolved oxygen in the ultra pure water with a reduced the dissolved oxygen, because of the less 50 ppb, to the surface of the object more effective in obtaining effectively cleaning device capable of removing impurities of a surface of an object without causing deterioration such as a natural oxide film.

【0029】請求項8に係わる発明によれば、前記遮断する光が、1.1eV以上のエネルギーを持つ光を遮断する機能を持たせたため、被処理体である被処理体が光の持つエネルギーによって励起されることがなく、その結果、被処理体である被処理体に対し、被処理体表面に光による電子あるいは正孔(ホール)の励起由来の不純物付着を起こさせずに、被処理体表面の不純物を効果的に除去することが可能な洗浄装置を得るのに効果的である。 According to the invention according to claim 8, light the interruption, because the have a function of blocking light having energy higher than 1.1 eV, the energy of the object to be processed as an object to be processed is of light without being excited by, as a result, with respect to the object to be processed as an object to be processed, without causing impurity deposition from excitation of electrons or holes caused by light to the surface of the object (Hall), to be treated it is effective to obtain a cleaning device capable of efficiently removing impurities of the body surface.

【0030】請求項9に係わる発明によれば、前記遮断する光が、3.4eV以上のエネルギーを持つ光を遮断する機能を持たせたので、効果的である。 According to the present invention relating to claim 9, light the blockade so have a function of blocking light having energy higher than 3.4 eV, it is effective. 請求項10に係わる発明によれば、前記遮断する光が、6.2eV以上のエネルギーを持つ光を遮断する機能を持たせたので、より効果的である。 According to the present invention relating to Claim 10, light the blockade so have a function of blocking light having energy higher than 6.2 eV, is more effective.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例に係わる洗浄装置の概略構成図である。 1 is a schematic configuration diagram of a cleaning apparatus according to an embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 遮光容器、 2 半導体(被処理体)、 3 洗浄容器、 4 不活性ガス供給装置、 5 不活性ガス供給配管、 6 不活性ガス、 7 超純水供給装置(溶存酸素除去機能を持つ)、 8 超純水供給配管、 9 超純水、 10 廃液受け容器、 11 廃液送液配管、 12 廃液処理装置、 13 ガス排気バルブ、 14 ガス排気配管。 1 shielding container, the second semiconductor material (workpiece), 3 washing container, (with dissolved oxygen removal function) 4 inert gas supply unit, 5 inert gas supply pipe, 6 an inert gas, 7 ultrapure water feeder, 8 ultrapure water supply pipe, 9 ultrapure water, 10 waste receptacle, 11 waste liquid feed pipe, 12 waste liquid treatment apparatus 13 the gas exhaust valve, 14 a gas exhaust pipe.

Claims (10)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 被処理体を洗浄または乾燥する装置において、少なくとも、被処理体が、洗浄に用いられる薬液あるいは超純水に接する部分に、光を遮断する手段を設けたことを特徴とする洗浄装置。 1. A device for cleaning or drying the object to be processed, at least, the target object is, the drug solution or the portion in contact with the ultra-pure water used for washing, characterized in that a means for blocking light cleaning equipment.
  2. 【請求項2】 内部雰囲気を置換可能な容器と、前記容器内に不活性なガスを供給する手段と、溶存酸素を低減した超純水を供給する手段を設けたことを特徴とする請求項1に記載の洗浄装置。 2. A claim that a replaceable container interior atmosphere, means for supplying inert gas into the container, characterized in that a means for supplying ultra-pure water with a reduced dissolved oxygen cleaning apparatus according to 1.
  3. 【請求項3】 前記内部雰囲気を置換可能な容器内に、 To 3. A replaceable container the interior atmosphere,
    少なくとも、被処理体が、洗浄に用いられる薬液あるいは超純水に接する部分を設置することを特徴とする請求項1または請求項2に記載の洗浄装置。 At least, the cleaning device according to claim 1 or claim 2 workpiece, characterized in placing the liquid medicine or the portion in contact with the ultra-pure water used for washing.
  4. 【請求項4】 前記内部雰囲気を置換可能な容器内に、 4. A replaceable container the interior atmosphere,
    少なくとも、被処理体を、超純水による最終洗浄および付着した超純水を乾燥する部分を設置することを特徴とする請求項1乃至請求項3のいずれか1項に記載の洗浄装置。 At least, the washing apparatus according to the object to be processed, in any one of claims 1 to 3, characterized in placing the parts to dry ultrapure water was finally washed and deposited with ultrapure water.
  5. 【請求項5】 前記不活性なガスが、窒素であることを特徴とする請求項1乃至請求項4のいずれか1項に記載の洗浄装置。 Wherein said inert gas is a cleaning apparatus according to any one of claims 1 to 4, characterized in that it is nitrogen.
  6. 【請求項6】 前記不活性なガスが、アルゴンであることを特徴とする請求項1乃至請求項5のいずれか1項に記載の洗浄装置。 Wherein said inert gas is a cleaning apparatus according to any one of claims 1 to 5, characterized in that argon.
  7. 【請求項7】 前記不活性なガス中の酸素濃度が10p 7. oxygen concentration in the inert gas is 10p
    pm以下、前記溶存酸素を低減した超純水中の溶存酸素が、50ppb以下であることを特徴とする請求項1乃至請求項6のいずれか1項に記載の洗浄装置。 pm or less, the dissolved oxygen in the ultra pure water with a reduced the dissolved oxygen, the cleaning device according to any one of claims 1 to 6, characterized in that less than 50 ppb.
  8. 【請求項8】 前記遮断する光が、1.1eV以上のエネルギーを持つ光を遮断する機能を持つことを特徴とする請求項1乃至請求項7いずれか1項に記載の洗浄装置。 8. Light the blockade cleaning apparatus according to claims 1 to 7 any one characterized as having a function of blocking light having energy higher than 1.1 eV.
  9. 【請求項9】 前記遮断する光が、3.4eV以上のエネルギーを持つ光を遮断する機能を持つことを特徴とする請求項1乃至請求項7いずれか1項に記載の洗浄装置。 9. Light the blockade cleaning apparatus according to claims 1 to 7 any one characterized as having a function of blocking light having energy higher than 3.4 eV.
  10. 【請求項10】 前記遮断する光が、6.2eV以上のエネルギーを持つ光を遮断する機能を持つことを特徴とする、請求項1乃至請求項7いずれか1項に記載の洗浄装置。 10. A light the interruption, characterized by having a function of blocking light having energy higher than 6.2 eV, the cleaning device according to any one of claims 1 to claim 7.
JP23227991A 1991-08-20 1991-08-20 Cleaning apparatus Pending JPH0547734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23227991A JPH0547734A (en) 1991-08-20 1991-08-20 Cleaning apparatus

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP23227991A JPH0547734A (en) 1991-08-20 1991-08-20 Cleaning apparatus
PCT/JP1992/001048 WO1993004210A1 (en) 1991-08-19 1992-08-19 Method for forming oxide film
EP19920917995 EP0661385A1 (en) 1991-08-19 1992-08-19 Method for forming oxide film
US08680519 US6146135A (en) 1991-08-19 1996-07-09 Oxide film forming method
US10120628 US6949478B2 (en) 1991-08-19 2002-04-11 Oxide film forming method
US11129710 US20050206018A1 (en) 1991-08-19 2005-05-13 Oxide film forming method

Publications (1)

Publication Number Publication Date
JPH0547734A true true JPH0547734A (en) 1993-02-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP23227991A Pending JPH0547734A (en) 1991-08-20 1991-08-20 Cleaning apparatus

Country Status (1)

Country Link
JP (1) JPH0547734A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129098A (en) * 1997-08-29 2000-10-10 Kabushiki Kaisha Ultraclean Technology Research Institute Apparatus for injecting constant quantitative chemicals and a method thereof
US6350322B1 (en) 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
JP2005213498A (en) * 2005-01-17 2005-08-11 Tadahiro Omi Cleaning fluid and cleaning method
JP2015228458A (en) * 2014-06-02 2015-12-17 富士通株式会社 Compound semiconductor device and method of manufacturing the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7204889B2 (en) 1997-03-21 2007-04-17 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6350322B1 (en) 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6601595B2 (en) 1997-03-21 2003-08-05 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6607001B1 (en) * 1997-03-21 2003-08-19 Micron Technology, Inc. System of reducing water spotting and oxide growth on a semiconductor structure
US6641677B1 (en) 1997-03-21 2003-11-04 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6645311B2 (en) 1997-03-21 2003-11-11 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6656289B2 (en) 1997-03-21 2003-12-02 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6896740B2 (en) 1997-03-21 2005-05-24 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US7422639B2 (en) 1997-03-21 2008-09-09 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US7163019B2 (en) 1997-03-21 2007-01-16 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6129098A (en) * 1997-08-29 2000-10-10 Kabushiki Kaisha Ultraclean Technology Research Institute Apparatus for injecting constant quantitative chemicals and a method thereof
JP2005213498A (en) * 2005-01-17 2005-08-11 Tadahiro Omi Cleaning fluid and cleaning method
JP4554377B2 (en) * 2005-01-17 2010-09-29 忠弘 大見 Washing liquid and cleaning method
JP2015228458A (en) * 2014-06-02 2015-12-17 富士通株式会社 Compound semiconductor device and method of manufacturing the same

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