JPH0545845B2 - - Google Patents
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- Publication number
- JPH0545845B2 JPH0545845B2 JP27412285A JP27412285A JPH0545845B2 JP H0545845 B2 JPH0545845 B2 JP H0545845B2 JP 27412285 A JP27412285 A JP 27412285A JP 27412285 A JP27412285 A JP 27412285A JP H0545845 B2 JPH0545845 B2 JP H0545845B2
- Authority
- JP
- Japan
- Prior art keywords
- combustion
- flow path
- exhaust gas
- burner
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007789 gas Substances 0.000 claims description 64
- 238000002485 combustion reaction Methods 0.000 claims description 59
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000000567 combustion gas Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000011261 inert gas Substances 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 238000009434 installation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000009841 combustion method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Incineration Of Waste (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造工程などから排出されるシ
ランガス等の有毒成分を含む排ガスを無害化する
ための燃焼方法とそのための燃焼装置に関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a combustion method for detoxifying exhaust gas containing toxic components such as silane gas discharged from semiconductor manufacturing processes, and a combustion apparatus for the same. .
半導体製造装置からはシラン（SiH4）、ジクロ
ルシラン（SiH2Cl2）、ゲルマン（GeH4）、ジボ
ラン（B2H6）、アルシン（AsH3）、ホスフイン
PH3）等種々の成分ガスを含んだ排ガスが排出さ
れるが、これらの成分ガスは有毒なのでこれを燃
焼し安全化して排気することが要求される。そし
て、これらの成分ガスは自燃性であるか若しくは
可燃性であるので、バーナを用いて燃焼処理され
ている。以下、図面を用いてこれを説明する。
Semiconductor manufacturing equipment produces silane (SiH 4 ), dichlorosilane (SiH 2 Cl 2 ), germane (GeH 4 ), diborane (B 2 H 6 ), arsine (AsH 3 ), and phosphine.
Exhaust gas containing various component gases such as PH 3 ) is discharged, but since these component gases are toxic, it is required to burn them to make them safe before exhausting them. Since these component gases are self-combustible or combustible, they are burned using a burner. This will be explained below using the drawings.
第５図は従来の半導体製造排ガスの燃焼装置の
一例を示す中央縦断面図で、１は燃焼室を形成す
る中空筒体で、該中空筒体１の下方側部には空気
導入部２が、また、頂部には排気系（図示せず）
と連通する燃焼ガス排出部３が設けられている。
そして、前記中空筒体１の底部からは同心二重管
バーナ４が上方に向けて貫通して設けられ、該バ
ーナ４の内管４ａには排ガス流路５が、内管４ａ
と該管４ｂとの間には不活性ガス流路６がそれぞ
れ形成されている。なお、７は空気導入部２から
燃焼ガス排出部３へ流れる空気を整流するための
整流板、８はフランジ間に耐熱ガラスを介装した
火炎監視窓である。 FIG. 5 is a central longitudinal cross-sectional view showing an example of a conventional semiconductor manufacturing exhaust gas combustion apparatus, in which 1 is a hollow cylinder forming a combustion chamber, and an air introduction part 2 is provided at the lower side of the hollow cylinder 1. , and an exhaust system (not shown) on the top.
A combustion gas discharge section 3 communicating with the combustion gas discharge section 3 is provided.
A concentric double tube burner 4 is provided to penetrate upward from the bottom of the hollow cylindrical body 1, and an exhaust gas passage 5 is provided in the inner tube 4a of the burner 4.
An inert gas flow path 6 is formed between the pipe 4b and the pipe 4b. In addition, 7 is a rectifying plate for rectifying the air flowing from the air introduction part 2 to the combustion gas discharge part 3, and 8 is a flame monitoring window with heat-resistant glass interposed between flanges.
上述の如き燃焼装置において、まず空気導入部
２から中空筒体１内に導入した空気を燃焼ガス排
出部３から排気系に排出し、中空筒体１内に上向
きの空気流を形成する。次いで前記半導体製造工
程からのシランガスを含む排ガスを排ガス流路５
に、また不活性ガスとして窒素ガスを不活性ガス
流路６にそれぞれ流すと、シランガスは自燃性な
ので空気に触れると直ちに燃焼するが、窒素ガス
によるガスカーテン作用により若干燃焼が遅れ、
第５図の如く、バーナ４のノズルより若干上方に
リフトせしめてノズル口端より離して火炎９を形
成して燃焼する。そして燃焼により生成したガス
は前記空気と共に燃焼ガス排出部３から前記した
排気系（図示せず）に排出され、次工程にて更に
処理されるものである。そして上記装置での従来
の燃焼方法では、シランガス燃焼に伴つて生ずる
微少粒子の二酸化珪素が、一般に上方に上昇して
浮遊することから火炎を上方に生ずるよう上向き
で燃焼するようにしており、そして又バーナ４の
排ガス流路５のノズル口に二酸化珪素が付着し、
該ノズルを閉鎖するのを防止するため、火炎９が
ノズルより離れて形成されるよう不活性ガスを用
いて火炎をリフトさせているのが実情である。 In the combustion apparatus as described above, first, air introduced into the hollow cylinder 1 from the air introduction part 2 is discharged from the combustion gas discharge part 3 to the exhaust system to form an upward air flow inside the hollow cylinder 1. Next, the exhaust gas containing silane gas from the semiconductor manufacturing process is passed through the exhaust gas flow path 5.
In addition, when nitrogen gas is flowed as an inert gas into the inert gas flow path 6, silane gas is self-combustible, so it burns immediately when it comes into contact with air, but the combustion is slightly delayed due to the gas curtain effect of the nitrogen gas.
As shown in FIG. 5, the flame 9 is lifted slightly above the nozzle of the burner 4 and separated from the nozzle mouth end to form a flame 9 and burn. The gas produced by the combustion is discharged together with the air from the combustion gas discharge section 3 to the exhaust system (not shown), and is further processed in the next step. In the conventional combustion method in the above-mentioned apparatus, the fine particles of silicon dioxide generated as a result of silane gas combustion generally rise upward and become suspended, so the combustion is performed in an upward direction so as to generate a flame upward. In addition, silicon dioxide adheres to the nozzle opening of the exhaust gas flow path 5 of the burner 4,
In order to prevent the nozzle from closing, it is the practice to use an inert gas to lift the flame so that the flame 9 forms at a distance from the nozzle.
しかしながら、従来の燃焼装置には次のような
問題点がある。
However, conventional combustion devices have the following problems.
(1) シランガスの燃焼では、前記の如く火炎をリ
フトさせ燃焼に伴つて生ずる二酸化珪素がバー
ナ４の排ガス流路５のノズルに付着しないよう
にしているが、実際には中空筒体１内の対流等
により、時間の経過に伴つて徐々に該ノズルに
付着する。そして一旦付着すると次々に付着
し、バーナが上向きであるため、ついには排ガ
ス流路５を閉塞し、暫時後剥離するという現象
が繰り返される。そして、該剥離に伴う排ガス
流路の圧力変動は半導体製造工程に悪影響を及
ぼすだけでなく、バーナが上向きであるため剥
離した二酸化珪素の塊りが排ガス流路５内に落
下して該流路５をせばめ、不完全燃焼を起す原
因ともなる。(1) In the combustion of silane gas, as mentioned above, the flame is lifted to prevent silicon dioxide produced during combustion from adhering to the nozzle of the exhaust gas flow path 5 of the burner 4, but in reality, the flame is lifted. Due to convection and the like, it gradually adheres to the nozzle over time. Once they adhere, they adhere one after another, and because the burner is facing upward, they eventually block the exhaust gas flow path 5 and peel off after a while, a phenomenon that is repeated. The pressure fluctuation in the exhaust gas flow path due to the peeling not only has a negative effect on the semiconductor manufacturing process, but also because the burner is oriented upward, chunks of peeled silicon dioxide fall into the exhaust gas flow path 5, causing the flow path 5 and causes incomplete combustion.
(2) また、シランガス燃焼時に生成される微少の
二酸化珪素等の粉塵をそのまま大気中に排気す
るのは公害、衛生面で不適当なので燃焼ガス中
の該粉塵を除去する必要があるが、例えばバグ
フイルタで除去するには、燃焼ガスは高温なの
で予め冷却する必要がある。そしてこの場合、
従来の燃焼装置での燃焼では燃焼火炎を上向き
に形成しているため、該燃焼装置内に冷却設備
を設けることはできず、該燃焼装置と連結して
外部に別途冷却設備を設けているのが実情であ
る。また、他の除去方法として燃焼ガス中の粉
塵を水で捕捉する方法があるが、この場合で
も、従来の燃焼装置では燃焼ガスを水と混合さ
せるため水混合装置を該燃焼装置外に設けなけ
れならず、設置面積及び費用の点で不都合であ
る。(2) In addition, it is inappropriate from a pollution and sanitary point of view to exhaust minute amounts of dust such as silicon dioxide generated during silane gas combustion into the atmosphere, so it is necessary to remove the dust from the combustion gas. Since the combustion gas is at a high temperature, it must be cooled before it can be removed using a bag filter. And in this case,
In combustion in conventional combustion equipment, the combustion flame is formed upward, so it is not possible to install cooling equipment inside the combustion equipment. is the reality. Another removal method is to use water to capture dust in the combustion gas, but even in this case, in conventional combustion equipment, a water mixing device must be installed outside the combustion equipment to mix the combustion gas with water. This is disadvantageous in terms of installation space and cost.
(3) 更に前記の如く、燃焼ガスは高温なので中空
筒体１自体も高温になり、例えば火炎監視窓８
から火炎９を監視する場合に、危険である。そ
こで中空筒体１の温度上昇を抑制するため該中
空筒体１に断熱材を施すか、または中空筒体１
に注水する必要がある。(3) Furthermore, as mentioned above, since the combustion gas is high temperature, the hollow cylindrical body 1 itself also becomes high temperature, for example, the flame monitoring window 8
This is dangerous when monitoring the flame 9 from the ground. Therefore, in order to suppress the temperature rise of the hollow cylindrical body 1, a heat insulating material is applied to the hollow cylindrical body 1, or
It is necessary to inject water into the area.
(4) また、従来の燃焼装置では、中空筒体１内を
上方に向つて流れる空気流により、中空筒体１
内壁面への二酸化珪素の付着を防止している
が、防止効果は充分ではなく、該内壁面に二酸
化珪素が付着してしまう。そして特に火炎が上
向きであるため、二酸化珪素は中空筒体１の上
方に多く付着し、ある程度の付着量になると、
中空筒体１内の対流及び自重により剥離して落
下し、バーナ４に衝突して燃焼を阻害する恐れ
がある。(4) In addition, in the conventional combustion device, the air flow flowing upward inside the hollow cylinder 1 causes the hollow cylinder to
Although silicon dioxide is prevented from adhering to the inner wall surface, the prevention effect is not sufficient and silicon dioxide ends up adhering to the inner wall surface. In particular, since the flame is directed upward, a large amount of silicon dioxide adheres to the upper part of the hollow cylindrical body 1, and when it reaches a certain amount,
Due to the convection within the hollow cylindrical body 1 and its own weight, it may peel off and fall, colliding with the burner 4 and inhibiting combustion.
本発明は、上記の不都合に鑑みて種々考究した
結果なされたもので、燃焼火炎を下向きに発生せ
しめて、ノズル口に生成付着したり、又燃焼装置
内壁に付着する二酸化珪素が剥離して落下した際
ノズル口内に入つて流路を閉塞するのを防止し
て、常に安定した状態で燃焼を遂行せしめ、又燃
焼に当つて装置内で水噴射することを可能とし
て、装置の冷却と共に、それ以後の水処理を容易
にすると共に、水処理に必要な水処理設備を燃焼
装置外に別途に設けることを省略して設置装置の
設置空間の縮減と費用の低減化を図ることを目的
とする。 The present invention was made as a result of various studies in view of the above-mentioned disadvantages, and it is possible to generate combustion flames downward, so that silicon dioxide formed and adhered to the nozzle opening or adhered to the inner wall of the combustion device may peel off and fall. This prevents water from entering the nozzle opening and clogging the flow path, allowing the combustion to always be carried out in a stable state.Also, by making it possible to inject water into the device during combustion, it is possible to cool the device and to prevent it from clogging the flow path. The purpose is to facilitate subsequent water treatment, and to reduce the installation space and cost of the installation equipment by omitting the separate installation of water treatment equipment necessary for water treatment outside the combustion equipment. .
〔問題点を解決するための手段〕
そしてその特徴とするところは、第１発明は、
半導体製造排ガスの燃焼にあたつて、上方より下
方に空気を流通せしめた装置内で、中心から順に
半導体製造排ガス流路、不活性ガス流路、一次空
気流路、二次空気流路を形成してなる同心四重管
により、それぞれの上記気体を下向きに流出せし
めて燃焼火災を形成すると共に、前記装置内に上
方より下方に流通する空気を0.5ｍ／sec以上の流
速で流し、また、前記バーナの一次空気の流速を
２〜10ｍ／sec、二次空気の流速を該一次空気の
流速と同等以上にして燃焼させることを特徴とす
る半導体製造排ガスの燃焼方法であり、
又これを実施するための第２発明は、上部に空
気導入部を、底部に排気系と連通する燃焼ガス排
出部とを有する中空筒体内に、中心から順に半導
体製造排ガス流路、不活性ガス流路、一次空気流
路、二次空気流路を形成して下向きに開口する同
心四重管バーナを設けることを特徴とする半導体
製造排ガスの燃焼装置に係り、
第３発明は、第２発明において、前記同心四重
管バーナの開口部下方に水スプレー管を設けたこ
とを特徴とする半導体製造排ガスの燃焼装置であ
る。[Means for solving the problem] The first invention is characterized by:
When burning semiconductor manufacturing exhaust gas, a semiconductor manufacturing exhaust gas flow path, an inert gas flow path, a primary air flow path, and a secondary air flow path are formed in order from the center in a device that allows air to flow from the top to the bottom. A concentric quadruple pipe made of a concentric quadruple tube causes each of the above gases to flow downward to form a combustion fire, and at the same time, the air flowing from the top to the bottom of the device is made to flow at a flow rate of 0.5 m/sec or more, and A method for burning semiconductor manufacturing exhaust gas, characterized in that combustion is performed at a flow rate of primary air of the burner of 2 to 10 m/sec and a flow rate of secondary air equal to or higher than the flow rate of the primary air, and the method is carried out. A second invention for the purpose of the present invention is to provide a semiconductor manufacturing exhaust gas flow path, an inert gas flow path, and a primary gas flow path in order from the center in a hollow cylinder having an air introduction part at the top and a combustion gas discharge part communicating with the exhaust system at the bottom. A third invention relates to a semiconductor manufacturing exhaust gas combustion apparatus characterized in that a concentric quadruple tube burner is provided which forms an air flow path and a secondary air flow path and opens downward. This is a combustion device for semiconductor manufacturing exhaust gas, characterized in that a water spray pipe is provided below the opening of a quadruple tube burner.
以下、第１図乃至第４図を用いて本発明の一実
施例を説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 4.
第１図は本発明に係る燃焼装置の中央縦断面
図、第２図は第１図の−線断面図、第３図は
本燃焼装置に使用するバーナの縦断面図で、特に
ノズル付近の拡大図である。 FIG. 1 is a central vertical cross-sectional view of the combustion device according to the present invention, FIG. 2 is a cross-sectional view taken along the line - - in FIG. It is an enlarged view.
第１図乃至第３図において、１１は燃焼室を形
成する中空筒体で、該中空筒体１１の上部側方に
は空気導入部１２が、また、底部には排気系（図
示せず）に連通する燃焼ガス排出部１３が設けら
れている。次に１４は前記中空筒体１１の頭部か
ら下方に向けて貫通させて設けた同心四重管バー
ナで、該バーナ１４の内管１４ａには排ガス路１
５が、該内管１４ａとその外側の第２の内管１４
ｂとの間には不活性ガス流路１６が、該第２の内
管１４ｂとその外側の第３の内管１４ｃとの間に
は一次空気流路１７が、更に該第３の内管１４ｃ
と外管１４ｄとの間には二次空気流路１８がそれ
ぞれ形成されている。そして更に、内管１４ａの
端部は第３図の如く第２の内管１４ｂの端部より
若干内側に位置して形成されている。 In FIGS. 1 to 3, reference numeral 11 denotes a hollow cylinder forming a combustion chamber, an air introduction part 12 is provided at the upper side of the hollow cylinder 11, and an exhaust system (not shown) is provided at the bottom. A combustion gas discharge section 13 is provided which communicates with the combustion gas discharge section 13 . Next, reference numeral 14 denotes a concentric quadruple pipe burner that is provided to penetrate downward from the head of the hollow cylindrical body 11, and an exhaust gas passage 1 is provided in the inner pipe 14a of the burner 14.
5 is the inner tube 14a and the second inner tube 14 outside thereof.
b, an inert gas flow path 16 between the second inner pipe 14b and the third inner pipe 14c outside thereof, a primary air flow path 17 between the second inner pipe 14b and the third inner pipe 14c outside the second inner pipe 14b; 14c
A secondary air flow path 18 is formed between the outer tube 14d and the outer tube 14d. Further, as shown in FIG. 3, the end of the inner tube 14a is located slightly inside than the end of the second inner tube 14b.
このように、本発明ではバーナ１４を同心四重
管としたので、シランガスを中空筒体１１内で下
向きに、かつバーナ１４の下端部より下方に少し
離して火炎を形成し、かつ効率良く燃焼させるこ
とが出来る。即ち、前記第５図に例示した従来の
燃焼装置をただ単に天地を逆にして使用して本発
明の如き下向き火炎を形成するようにすると、火
炎はそれ自体の浮力により煽られて末広がり（ブ
ロード）の不安定な火炎となり、又火炎の温度が
低下して不完全燃焼を惹起する。 In this way, in the present invention, since the burner 14 is made of a concentric quadruple tube, the silane gas is directed downward in the hollow cylinder 11 and slightly away from the lower end of the burner 14 to form a flame, and burn efficiently. I can do it. That is, when the conventional combustion apparatus illustrated in FIG. 5 is simply turned upside down and used to form a downward flame as in the present invention, the flame is fanned by its own buoyancy and spreads out. ), resulting in an unstable flame, and the flame temperature decreases, causing incomplete combustion.
このようなことより本発明においては、前記の
如くバーナ１４の構造を同心四重管として一次、
二次空気流路１７，１８に流れる空気量をそれぞ
れ適切に調整することによつて常時安定した火炎
を保持し得るようにしたものである。 For this reason, in the present invention, the structure of the burner 14 is a concentric quadruple pipe as described above, and the primary,
By appropriately adjusting the amount of air flowing through the secondary air channels 17 and 18, a stable flame can be maintained at all times.
次に１９は空気導入部１２より導入された空気
を整流する整流板で、例えばパンチングプレート
の如き多孔板で形成され、該整流板１９に前記下
向きバーナ１４を貫通させることにより該バーナ
１４の保持にも兼用される。また、２０は常時着
火しておくパイロツトバーナの如き点火源で、前
記バーナ１４の各ノズルの下方の適宜位置に火炎
が位置するように１本、またはそれ以上配置され
ている。 Next, reference numeral 19 denotes a rectifying plate that rectifies the air introduced from the air introduction part 12, and is formed of a perforated plate such as a punching plate, and holds the burner 14 by passing the downward burner 14 through the rectifying plate 19. Also used for Further, reference numeral 20 denotes an ignition source such as a pilot burner which is always ignited, and one or more ignition sources are arranged so that the flame is located at an appropriate position below each nozzle of the burner 14.
次に２１はバーナ１４により該バーナ１４の下
方に形成される火炎の下方に位置するように配置
された水スプレー管で、第２の如く「コの字状」
を水平に配置してなり、該水スプレー管２１の相
対向する「コの字状」の内側には水平方向に複数
の水噴出ノズル２２が設けられている。 Next, 21 is a water spray pipe located below the flame formed below the burner 14 by the burner 14, and has a "U-shaped" shape as shown in the second figure.
are arranged horizontally, and a plurality of water jet nozzles 22 are provided in the horizontal direction inside the "U-shaped" facing each other of the water spray pipes 21.
上述の如く構成した本発明に係る燃焼装置は次
の通り操作、運転される。 The combustion apparatus according to the present invention constructed as described above is operated and operated as follows.
まず、パイロツトバーナ２０にプロパン等の燃
料ガスを供給して着火すると共に、空気導入部１
２からの空気を燃焼ガス排出部１３を介して排気
系（図示せず）に排出し中空筒体１１内に下向き
の空気流を形成する。 First, a fuel gas such as propane is supplied to the pilot burner 20 to ignite it, and the air introduction part 1
2 is discharged to an exhaust system (not shown) through a combustion gas discharge section 13 to form a downward air flow within the hollow cylinder 11.
なお、該空気流の筒内流速は0.5ｍ／sec以上に
するのが望ましく、これ以下の流速だと微少の二
酸化珪素が軽く吹上げられて中空筒体１１内を舞
上がつてしまい装置外への排出が困難となる。 Note that it is desirable that the in-cylinder flow velocity of the air flow is 0.5 m/sec or higher; if the flow velocity is lower than this, minute amounts of silicon dioxide will be lightly blown up and fly up inside the hollow cylinder 11, causing it to fall outside the device. Difficult to discharge.
次いで半導体製造工程からの排ガスを排ガス流
路１５に、窒素ガスを不活性ガス流路１６に、空
気を一次、二次空気流路１７，１８にそれぞれ流
すと、それぞれのガスは各ノズルから平行に噴出
し排ガスはパイロツトバーナ２０からの火炎によ
り着火するが第１図の如く不活性ガス流路１６か
らの窒素ガスによるガスカーテン作用によりバー
ナ１４の各ノズルの下端部より若干下がつた位置
で燃焼し火炎２３が形成される。 Next, when exhaust gas from the semiconductor manufacturing process is flowed into the exhaust gas flow path 15, nitrogen gas is flowed into the inert gas flow path 16, and air is flowed through the primary and secondary air flow paths 17 and 18, the respective gases flow in parallel from each nozzle. The exhaust gas is ignited by the flame from the pilot burner 20, but as shown in FIG. It burns and a flame 23 is formed.
このように、火炎２３をバーナ１４の各ノズル
から下方に離すのは排ガス中のシランガス燃焼時
に生ずる二酸化珪素の微粉末が各ノズルに付着し
ないようにするためで、上記の如く火炎を形成
し、かつ安定して燃焼するためには、排ガス流路
１５を流れる排ガスの成分及び流速に応じて一次
空気の流速を２〜10ｍ／sec、二次空気の流速を
一次空気の流速以上とする。更に詳述すると、一
次空気の流速を２ｍ／sec以下にすると火炎の形
状は火炎自体の浮力の影響で末広がり（ブロー
ド）になり火炎が不安定となると共に火炎の温度
が低下して不完全燃焼を起こすこととなる。ま
た、一次空気の流速を10ｍ／sec以上にすると排
ガス量が少ないときに火炎が吹き飛んで燃焼を阻
害する不都合が生ずる。 The reason why the flame 23 is spaced downward from each nozzle of the burner 14 in this way is to prevent the fine powder of silicon dioxide produced during combustion of silane gas in the exhaust gas from adhering to each nozzle, forming a flame as described above. In order to achieve stable combustion, the flow velocity of the primary air is set to 2 to 10 m/sec, and the flow velocity of the secondary air is set to be higher than the flow velocity of the primary air, depending on the components and flow velocity of the exhaust gas flowing through the exhaust gas passage 15. More specifically, when the primary air flow velocity is lower than 2 m/sec, the shape of the flame becomes broader due to the buoyancy of the flame itself, making the flame unstable and lowering the flame temperature, resulting in incomplete combustion. This will cause Moreover, if the flow velocity of the primary air is set to 10 m/sec or more, there will be a problem that the flame will be blown away and combustion will be inhibited when the amount of exhaust gas is small.
次に二次空気は火炎２３の形状を棒状にして高
温を継持して燃焼させる作用をし、このためには
二次空気の流速を一次空気の流速と同等以上と
し、かつ2.5倍以内とするのが良い。これは、二
次空気の流速を一次空気の流速より遅くすると、
火炎の形状を安定して継持することが困難とな
り、また、二次空気の流速を一次空気の2.5倍以
上とすると排ガス量が少ないときに火炎が吹き飛
んでしまうからである。 Next, the secondary air has the effect of making the flame 23 rod-like and burning it while maintaining a high temperature.To do this, the flow velocity of the secondary air must be equal to or higher than the flow velocity of the primary air, and within 2.5 times. It's good to do that. This means that when the secondary air flow rate is slower than the primary air flow rate,
This is because it becomes difficult to maintain a stable flame shape, and if the flow velocity of the secondary air is 2.5 times or more that of the primary air, the flame will be blown away when the amount of exhaust gas is small.
上述の如く形成された火炎２３による燃焼によ
り生じた高温の燃焼ガスは前記空気流と共に下方
に向かい、この途中において、水スプレー管２１
からの水により冷却され、気液二層状態になつて
燃焼ガス排出部１３から排気系に流れる。 The high-temperature combustion gas generated by combustion by the flame 23 formed as described above heads downward together with the air flow, and along the way, the water spray pipe 21
The combustion gas is cooled by water from the combustion gas discharge section 13 and flows into the exhaust system in a gas-liquid two-layer state.
尚、上記説明において、パイロツトバーナ２０
を設けたのは半導体製造工程からの排ガス中のシ
ランガス濃度が種々変化しても常に安定した火炎
が維持されるようにしたもので、常に排ガス中に
シランガスが常時自燃する程度に含まれている場
合には特に設けなくても良いが、実際の排ガスで
はシランガスの濃度が高低し、自燃する濃度以下
になることもあるので設けておいた方が望まし
い。 In addition, in the above explanation, the pilot burner 20
This is to ensure that a stable flame is always maintained even if the concentration of silane gas in the exhaust gas from the semiconductor manufacturing process changes, and the silane gas is always contained in the exhaust gas to the extent that it will self-combust. In some cases, it may not be necessary to provide a silane gas, but in actual exhaust gas, the concentration of silane gas fluctuates, and it may be below the concentration at which it self-combusts, so it is desirable to provide one.
また、本実施例ではスプレー管２１の形状を
「コの字状」としたが、排ガス燃焼に伴う火炎２
３の直下方向をさける適宜の形状、例えばリング
状等でも良く、そしてスプレー管２１に設ける水
噴出ノズルの設置位置は限定されないが、水平に
噴出するようにすれば、水が中空筒体１１の内周
面に接触し流下するので該内周面に対して洗浄作
用が生じ、この結果、該内周面への二酸化珪素の
付着が防止されメンテナンスに便利である。更に
バーナ１４の取り付けは垂直に限定せず、適宜斜
めに傾けても良い。 In addition, although the shape of the spray pipe 21 is "U-shaped" in this embodiment, the flame 2 caused by combustion of exhaust gas
3 may be any suitable shape, such as a ring shape, and the installation position of the water jet nozzle installed in the spray pipe 21 is not limited, but if the water is spouted horizontally, the water will flow into the hollow cylindrical body 11. Since it comes into contact with the inner circumferential surface and flows down, a cleaning action is produced on the inner circumferential surface, and as a result, adhesion of silicon dioxide to the inner circumferential surface is prevented, which is convenient for maintenance. Furthermore, the burner 14 is not limited to being mounted vertically, but may be tilted as appropriate.
次に、上述の如く火炎を下向きに、かつ安定し
て燃焼するためのバーナの他の実施例を第４図に
より説明する。 Next, another embodiment of the burner for stably burning the flame downward as described above will be described with reference to FIG. 4.
第４図はバーナのノズル付近を拡大した中央縦
断面図で内管３０、第２の内管３１、第３の内管
３２及び外管３３の同心四重管で、基本的には前
記した第３図のバーナと類似の構成であるが、第
３図のバーナと異なる点は第３の内管３２と外管
３３である。即ち第３の内管３２の開口端部は第
２の内管３１及び外管３３の開口端部より内側に
位置させるように形成し、また外管３３の開口端
部３４はバーナの中心方向に向けて絞り込んだ形
状としたものである。このようように第４図のよ
うなバーナ形状とすると、前記第３図のバーナで
は、排ガス、窒素ガス、一次、二次空気が各ノズ
ルからそれぞれ平行に噴出していたのを二次空気
が火炎をバーナの中心方向に向つて包み込むよう
に作用することとなり、前記第３図のバーナを用
いた場合に比べ火炎が小さくなり、かつ高温を維
持し易くなつて、より効果的な燃焼を行なうこと
ができる。以上、第３図、第４図のバーナにおい
て、排ガス流路のノズル及び不活性ガス流路のノ
ズル部を形成する管を鋭角にすると二酸化珪素が
付着しにくく、かつ付着しても容易に剥離するの
で効果的である。 Fig. 4 is an enlarged central vertical sectional view of the vicinity of the nozzle of the burner, which is a concentric quadruple pipe consisting of an inner pipe 30, a second inner pipe 31, a third inner pipe 32, and an outer pipe 33, basically as described above. The structure is similar to that of the burner shown in FIG. 3, but the difference from the burner shown in FIG. 3 is the third inner tube 32 and outer tube 33. That is, the open end of the third inner tube 32 is formed to be located inside the open ends of the second inner tube 31 and the outer tube 33, and the open end 34 of the outer tube 33 is formed toward the center of the burner. The shape is narrowed down to In this way, if the burner shape is as shown in Fig. 4, the secondary air will be replaced with the burner shown in Fig. 3, in which exhaust gas, nitrogen gas, primary air, and secondary air are ejected in parallel from each nozzle. This acts to envelop the flame toward the center of the burner, making the flame smaller and easier to maintain high temperature than when using the burner shown in Fig. 3, resulting in more effective combustion. be able to. As mentioned above, in the burners shown in Figs. 3 and 4, if the tubes forming the nozzle part of the exhaust gas flow path and the nozzle part of the inert gas flow path are made at an acute angle, it is difficult for silicon dioxide to adhere, and even if it adheres, it is easily peeled off. Therefore, it is effective.
(1) 本発明に係る燃焼方法によれば、バーナを下
向きにして火炎を下方に形成するようにしたの
で、たとえバーナノズルに燃焼により生じた二
酸化珪素が部分的に付着してもノズルからのガ
ス圧及び自重により自然落下し、ノズルを閉塞
することがないので連続燃焼でき、また、これ
によりノズル部で圧力変動が起きないので半導
体製造工程からの排ガスの燃焼処理に好適であ
り実施効果が大きい。
(1) According to the combustion method according to the present invention, since the burner is directed downward to form the flame downward, even if silicon dioxide produced by combustion is partially attached to the burner nozzle, the gas from the nozzle It falls naturally due to pressure and its own weight and does not block the nozzle, allowing for continuous combustion.This also prevents pressure fluctuations at the nozzle, making it suitable for combustion treatment of exhaust gas from semiconductor manufacturing processes, and has great implementation effects. .
(2) また、本燃焼装置では火炎を下向きに燃焼さ
せるに当り、同心四重管バーナを用いて、一
次、二次空気の流速を適宜調節して燃焼するの
で、安定した火炎が保持出来るとともに効果的
な燃焼が可能である。(2) In addition, this combustion device uses a concentric quadruple tube burner to burn the flame downward and adjusts the flow velocity of the primary and secondary air as appropriate, making it possible to maintain a stable flame. Effective combustion is possible.
(3) 更に本発明では燃焼火炎を下向きに形成する
ようにできたので、火炎を阻害することなく装
置内に水スプレー管を設けることができる。(3) Furthermore, in the present invention, since the combustion flame can be formed downward, a water spray pipe can be provided within the apparatus without disturbing the flame.
この結果、
(i) 燃焼ガス冷却が燃焼室内ででき、別途の燃
焼ガス冷却設備は不要であり、
(ii) 燃焼ガスを水と混合した後、該燃焼ガス中
の固型酸化物を水中で捕捉して除去する方法
に使用した場合、中空筒体内で水と燃焼ガス
を混合でき、別途の水混合装置は不要とな
る。 As a result, (i) the combustion gas can be cooled within the combustion chamber, eliminating the need for separate combustion gas cooling equipment, and (ii) after the combustion gas is mixed with water, the solid oxides in the combustion gas can be removed in water. When used in the capture and removal method, water and combustion gas can be mixed within the hollow cylinder, eliminating the need for a separate water mixing device.
(iii) 燃焼ガス冷却時に中空筒体自体も冷却でき
るので、中空筒体に断熱材を設けなくて済
み、また、中空筒体冷却のための別途の注水
設備は不要である。 (iii) Since the hollow cylindrical body itself can be cooled when the combustion gas is cooled, there is no need to provide a heat insulating material to the hollow cylindrical body, and there is no need for separate water injection equipment for cooling the hollow cylindrical body.
(iv) スプレー管からの水が中空体内壁面に接触
して流れるようにすれば、該内壁面内に二酸
化珪素が付着することがなく、該内壁の清掃
などメンテナンスが楽になる。また、例え水
の接触しない中空筒体上方に二酸化珪素が付
着し、剥離し落下しても、本燃焼装置運転上
何ら支障がなく、燃焼にあたつての安定性が
著しく向上する。 (iv) By allowing the water from the spray tube to flow in contact with the inner wall surface of the hollow body, silicon dioxide will not adhere to the inner wall surface, and maintenance such as cleaning of the inner wall will become easier. Furthermore, even if silicon dioxide adheres to the upper part of the hollow cylindrical body which does not come into contact with water, and if it peels off and falls, there will be no problem in the operation of the present combustion apparatus, and the stability in combustion will be significantly improved.
等の効果を生ずる。This produces effects such as
第１図乃至第３図は、本発明の一実施例を示す
もので、第１図は燃焼装置の中央縦断面図、第２
図は第１図の−線断面図、第３図はバーナの
ノズル付近を拡大して示す縦断面図、第４図は本
発明のバーナの他の実施例を示すノズル付近を拡
大した縦断面図、第５図は従来の燃焼装置の縦断
面図である。
１１……中空筒体、１２……空気導入部、１３
……燃焼排ガス排出部、１４……バーナ、１５…
…半導体製造排ガス流路、１６……不活性ガス流
路、１７……一次空気流路、１８……二次空気流
路、２０……パイロツトバーナ、２１……水スプ
レー管。
1 to 3 show one embodiment of the present invention, in which FIG. 1 is a central vertical cross-sectional view of a combustion device, and FIG.
The figure is a cross-sectional view taken along the line -- of FIG. 1, FIG. 3 is an enlarged longitudinal cross-sectional view showing the vicinity of the nozzle of the burner, and FIG. 4 is a longitudinal cross-sectional view enlarged near the nozzle showing another embodiment of the burner of the present invention. FIG. 5 is a longitudinal sectional view of a conventional combustion device. 11...Hollow cylindrical body, 12...Air introduction part, 13
...Combustion exhaust gas discharge section, 14...Burner, 15...
...Semiconductor manufacturing exhaust gas flow path, 16...Inert gas flow path, 17...Primary air flow path, 18...Secondary air flow path, 20...Pilot burner, 21...Water spray pipe.
Claims (1)
り下方に空気を流通せしめた装置内で、中心から
順に半導体製造排ガス流路、不活性ガス流路、一
次空気流路、二次空気流路を形成してなる同心四
重管により、それぞれの上記気体を下向きに流出
せしめて燃焼火炎を形成すると共に、前記装置内
に上方より下方に流通する空気を0.5ｍ／sec以上
の流速で流し、また、前記バーナの一次空気の流
速を２〜10ｍ／sec、二次空気の流速を該一次空
気の流速と同等以上にして燃焼させることを特徴
とする半導体製造排ガスの燃焼方法。 ２ 上部に空気導入部を、底部に排気系と連通す
る燃焼ガス排出部とを有する中空筒体内に、中心
から順に半導体製造排ガス流路、不活性ガス流
路、一次空気流路、二次空気流路を形成して下向
きに開口する同心四重管バーナを設けることを特
徴とする半導体製造排ガスの燃焼装置。 ３ 上部に空気導入部を、底部に排気系と連通す
る燃焼ガス排出部とを有する中空筒体内に、中心
から順に排ガス流路、不活性ガス流路、一次空気
流路、二次空気流路を形成し下向きに開口する同
心四重管バーナを設けるとともに前記同心四重管
バーナの開口部下方に水スプレー管を設けたこと
を特徴とする半導体製造排ガスの燃焼装置。[Scope of Claims] 1. In a device that allows air to flow from above to below during combustion of semiconductor manufacturing exhaust gas, semiconductor manufacturing exhaust gas flow path, inert gas flow path, primary air flow path, The concentric quadruple pipes forming the secondary air flow path cause each of the above gases to flow downward to form a combustion flame, and the air flowing from the top to the bottom in the device at a rate of 0.5 m/sec or more A method for burning semiconductor manufacturing exhaust gas, characterized in that the combustion is performed at a flow rate of primary air of the burner of 2 to 10 m/sec and a flow rate of secondary air equal to or higher than the flow rate of the primary air. . 2 A semiconductor manufacturing exhaust gas flow path, an inert gas flow path, a primary air flow path, and a secondary air flow path are arranged in order from the center within a hollow cylinder having an air introduction section at the top and a combustion gas discharge section communicating with the exhaust system at the bottom. A combustion device for semiconductor manufacturing exhaust gas, characterized in that it is provided with a concentric quadruple tube burner that forms a flow path and opens downward. 3 Inside a hollow cylinder having an air introduction part at the top and a combustion gas discharge part communicating with the exhaust system at the bottom, an exhaust gas flow path, an inert gas flow path, a primary air flow path, and a secondary air flow path are arranged in order from the center. 1. A combustion apparatus for semiconductor manufacturing exhaust gas, characterized in that a concentric quadruple tube burner is provided and opens downward, and a water spray pipe is provided below the opening of the concentric quadruple tube burner.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27412285A JPS62134414A (en) | 1985-12-04 | 1985-12-04 | Method for burning semiconductor manufacturing exhaust gas and device for burning said gas |
| US06/937,120 US4801437A (en) | 1985-12-04 | 1986-12-02 | Process for treating combustible exhaust gases containing silane and the like |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27412285A JPS62134414A (en) | 1985-12-04 | 1985-12-04 | Method for burning semiconductor manufacturing exhaust gas and device for burning said gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62134414A JPS62134414A (en) | 1987-06-17 |
| JPH0545845B2 true JPH0545845B2 (en) | 1993-07-12 |
Family
ID=17537325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27412285A Granted JPS62134414A (en) | 1985-12-04 | 1985-12-04 | Method for burning semiconductor manufacturing exhaust gas and device for burning said gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62134414A (en) |
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|---|---|---|---|---|
| JP2006194541A (en) * | 2005-01-14 | 2006-07-27 | Tokyo Gas Co Ltd | Flame-retardant substance decomposition burner |
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|---|---|---|---|---|
| JPH02126014A (en) * | 1988-07-29 | 1990-05-15 | Chiyoda Corp | Method and apparatus for burning and processing toxic gas |
| JP2742562B2 (en) * | 1988-10-11 | 1998-04-22 | 千代田化工建設株式会社 | Combustion treatment method for toxic exhaust gas |
| FR2651561B1 (en) * | 1989-09-04 | 1991-12-27 | Sgn Soc Gen Tech Nouvelle | PROCESS AND PLANT FOR THE COMBUSTION OF TOXIC GASEOUS EFFLUENTS. |
| JPH10110926A (en) * | 1996-08-14 | 1998-04-28 | Nippon Sanso Kk | Combustion type harm removal apparatus |
| JP2001355820A (en) * | 2000-06-12 | 2001-12-26 | Sumitomo Seika Chem Co Ltd | Method and device for treating exhaust gas |
| KR100623369B1 (en) | 2005-09-05 | 2006-09-12 | 크린시스템스코리아(주) | Burner of a scrubber for a semiconductor manufacture equipment |
| KR100833348B1 (en) | 2007-01-12 | 2008-05-28 | 유니셈(주) | System for supplying waste organic material |
| CN102421509A (en) | 2009-03-12 | 2012-04-18 | 吉坤日矿日石能源株式会社 | Exhaust gas processing apparatus and method for processing exhaust gas |
| CN102791356A (en) | 2010-03-12 | 2012-11-21 | 吉坤日矿日石能源株式会社 | Exhaust-gas treatment system |
| JP2013015232A (en) * | 2011-06-30 | 2013-01-24 | Edwards Kk | Combustion-type exhaust gas treatment apparatus |
| JP6410185B2 (en) * | 2015-08-19 | 2018-10-24 | 月島環境エンジニアリング株式会社 | Combustion method and combustion apparatus for silane-containing gas or silane-containing waste liquid |
| CN105333444A (en) * | 2015-10-28 | 2016-02-17 | 苏州仕净环保科技股份有限公司 | Silane tail gas combusting dust removing and purifying system |
| JP2017089985A (en) * | 2015-11-11 | 2017-05-25 | 株式会社荏原製作所 | Exhaust gas treatment device |
-
1985
- 1985-12-04 JP JP27412285A patent/JPS62134414A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006194541A (en) * | 2005-01-14 | 2006-07-27 | Tokyo Gas Co Ltd | Flame-retardant substance decomposition burner |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62134414A (en) | 1987-06-17 |
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