JPH0543786B2 - - Google Patents

Info

Publication number
JPH0543786B2
JPH0543786B2 JP11061387A JP11061387A JPH0543786B2 JP H0543786 B2 JPH0543786 B2 JP H0543786B2 JP 11061387 A JP11061387 A JP 11061387A JP 11061387 A JP11061387 A JP 11061387A JP H0543786 B2 JPH0543786 B2 JP H0543786B2
Authority
JP
Japan
Prior art keywords
substrate
thin film
gas
vapor
ionized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP11061387A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63235468A (ja
Inventor
Hiromoto Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to KR1019870011455A priority Critical patent/KR900008155B1/ko
Priority to CN87107161A priority patent/CN1019513B/zh
Priority to CA000550340A priority patent/CA1308689C/en
Priority to EP87309497A priority patent/EP0266178B1/en
Priority to DE3789753T priority patent/DE3789753T2/de
Priority to US07/113,165 priority patent/US4805555A/en
Priority to US07/238,114 priority patent/US4959242A/en
Publication of JPS63235468A publication Critical patent/JPS63235468A/ja
Publication of JPH0543786B2 publication Critical patent/JPH0543786B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP62110613A 1986-10-29 1987-05-08 薄膜形成方法およびその装置 Granted JPS63235468A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019870011455A KR900008155B1 (ko) 1986-10-29 1987-10-15 박막형성방법 및 그 장치
CN87107161A CN1019513B (zh) 1986-10-29 1987-10-21 化合物薄膜形成装置
CA000550340A CA1308689C (en) 1986-10-29 1987-10-27 Method and apparatus for forming a thin film
EP87309497A EP0266178B1 (en) 1986-10-29 1987-10-27 Method and apparatus for forming a thin film
DE3789753T DE3789753T2 (de) 1986-10-29 1987-10-27 Verfahren und Anordnung zur Herstellung einer dünnen Schicht.
US07/113,165 US4805555A (en) 1986-10-29 1987-10-27 Apparatus for forming a thin film
US07/238,114 US4959242A (en) 1986-10-29 1988-08-30 Method for forming a thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-255848 1986-10-29
JP25584886 1986-10-29

Publications (2)

Publication Number Publication Date
JPS63235468A JPS63235468A (ja) 1988-09-30
JPH0543786B2 true JPH0543786B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-02

Family

ID=17284431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62110613A Granted JPS63235468A (ja) 1986-10-29 1987-05-08 薄膜形成方法およびその装置

Country Status (1)

Country Link
JP (1) JPS63235468A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film

Also Published As

Publication number Publication date
JPS63235468A (ja) 1988-09-30

Similar Documents

Publication Publication Date Title
US4805555A (en) Apparatus for forming a thin film
US4799454A (en) Apparatus for forming a thin film
US4657774A (en) Method for thin film formation
US5054421A (en) Substrate cleaning device
WO1988006194A1 (en) Energy intensive surface reactions using a cluster beam
JP3386175B2 (ja) ガスクラスターイオン援用による化合物薄膜の形成方法
US5089289A (en) Method of forming thin films
JPH0543786B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3503787B2 (ja) 薄膜の形成方法
KR900008155B1 (ko) 박막형성방법 및 그 장치
JPS60251269A (ja) イオンプレ−テイング方法および装置
JPH05255838A (ja) 酸化物薄膜形成方法及びその装置
JPS63278218A (ja) 化合物薄膜形成装置
JPS6311662A (ja) 化合物薄膜形成装置
JPH05179433A (ja) 集積回路、その製造方法およびその薄膜形成装置
JPS63166960A (ja) ＳｉＯ↓２薄膜形成方法
JP2889039B2 (ja) 薄膜形成装置
JPH05171425A (ja) 化合物薄膜形成装置及び化合物薄膜の形成方法
JP2594961B2 (ja) ガスイオン源装置
JPH01139758A (ja) 薄膜蒸着方法および薄膜蒸着装置
CA1305564C (en) Substrate cleaning device
JPH03193865A (ja) ＰｂＯ↓２薄膜の形成方法
JP3169302B2 (ja) 活性化ガス発生装置
JPH07100866B2 (ja) 薄膜形成装置
JPH0586474B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)