JPH0542041B2 - - Google Patents
Info
- Publication number
- JPH0542041B2 JPH0542041B2 JP16342385A JP16342385A JPH0542041B2 JP H0542041 B2 JPH0542041 B2 JP H0542041B2 JP 16342385 A JP16342385 A JP 16342385A JP 16342385 A JP16342385 A JP 16342385A JP H0542041 B2 JPH0542041 B2 JP H0542041B2
- Authority
- JP
- Japan
- Prior art keywords
- metal base
- metal
- cantilever
- small diameter
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 9
- 238000003486 chemical etching Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレコードプレーヤのピツクアツプカー
トリツジ用のカンチレバー製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a cantilever for a pick-up cartridge for a record player.
従来の技術
一般にカートリツジのカンチレバーとしては、
針先より見た実効質量が小さいことが望まれる。
実効質量を小さくするためには、軽くて弾性率の
大きな材料換言すれば高比弾性材料をカンチレバ
ー材料に選ぶこと、またカンチレバー形状を針先
部の断面が小さく、カンチレバー支持部の断面が
大きいテーパ形状が望ましく、しかも比強度（剛
性／比重）が大きいパイプ形状が望ましい。Conventional technology In general, cartridge cantilevers are
It is desirable that the effective mass seen from the needle tip be small.
In order to reduce the effective mass, it is necessary to select a material that is light and has a high elastic modulus, in other words, a material with high specific elasticity, as the cantilever material, and also to select a cantilever shape that has a small cross section at the needle tip and a large cross section at the cantilever support. A pipe shape with a desirable shape and high specific strength (rigidity/specific gravity) is desirable.
従来のこのようなカンチレバーの製造方法とし
ては、一定の長さに切断された金属基体を加圧成
形しテーパ形状としその表面に蒸着等の方法で高
比弾性材料を形成したのち、エツチング処理して
高比弾性材料だけのカンチレバーを形成する方法
があつた。第３図に従来のこのような方法のカン
チレバーの製造方法の概略図を示す。１は金属基
体、２は蒸着装置、３は蒸着源である高比弾性材
料のベリリウムBe、４はテーパ形状のBeカンチ
レバーを示す。 The conventional method for manufacturing such cantilevers is to pressure-form a metal substrate cut to a certain length into a tapered shape, form a high specific elasticity material on its surface by vapor deposition or other methods, and then perform etching treatment. There was a method of forming cantilevers using only high specific elasticity materials. FIG. 3 shows a schematic diagram of a conventional method for manufacturing a cantilever using such a method. 1 is a metal substrate, 2 is a vapor deposition device, 3 is a vapor deposition source made of beryllium Be, which is a high specific elasticity material, and 4 is a tapered Be cantilever.
次に、改良されたテーパ状カンチレバーの製造
方法として、従来すでに本出願人が特願昭52−
125536号（特開昭54−58406号公報参照）および
特願昭55−77505号（特開昭57−3204号公報参照）
において金属棒または金属パイプ基体の外周にテ
ーパ加工を施して上記金属基体の外周の大径部と
小径部とを交互に所定の間隔で形成し、テーパ加
工を施した金属基体の表面に蒸着により高比弾性
材料を形成すること、およびこのように形成され
た金属基体を切断したのちエツチング処理して高
比弾性材料だけのテーパパイプカンチレバーを形
成することを出願した。第２図に特開昭54−
58406号公報に示されたカンチレバー製造法の概
略図を示す。テーパ形状の金属基体５が電源６に
より加熱され蒸着等の方法で高比弾性材料が金属
基体５上に形成される。またこのように形成され
た金属基体を切断しエツチング処理し、テーパパ
イプカンチレバーが形成される。 Next, as a manufacturing method for an improved tapered cantilever, the present applicant has already proposed a patent application filed in 1983.
No. 125536 (see Japanese Patent Application Laid-open No. 54-58406) and Japanese Patent Application No. 77505 (see Japanese Patent Application Laid-Open No. 57-3204)
Taper processing is performed on the outer periphery of a metal rod or metal pipe base to form large diameter portions and small diameter portions on the outer periphery of the metal base alternately at predetermined intervals, and the surface of the tapered metal base is deposited by vapor deposition. The patent application is to form a high specific elasticity material, and to form a tapered pipe cantilever made only of the high specific elasticity material by cutting and etching the thus formed metal base. Figure 2 shows the Japanese Unexamined Patent Application Publication No. 1973-
A schematic diagram of the cantilever manufacturing method disclosed in Publication No. 58406 is shown. The tapered metal base 5 is heated by a power source 6, and a high specific elasticity material is formed on the metal base 5 by a method such as vapor deposition. Further, the metal base thus formed is cut and etched to form a tapered pipe cantilever.
発明が解決しようとする問題点
しかしながら上記のような構成では、一定の所
定長さに切断された金属基体上に蒸着等の方法で
高比弾性材料を形成することは量産性が悪く、し
かも長さ５〜６mm程度の金属基体のテーパ加工は
極めて難かしく、形状にバラツキが生じたりする
ため信頼性が欠けるなどの問題点を有した。ま
た、連続したテーパー形状の金属基体上に蒸着等
の方法により高比弾性材料を形成する方法は量産
性は高いが、金属基体の太さが一定でないため通
電した場合に小径部の温度が高く、大径部の温度
が低くなるため金属基体の温度分布が一定になら
ず蒸着膜の均一性が得にくいこと、また加熱温度
が高くなれば金属基体の小径部が溶断し易くなる
ためテーパ度の大きなカンチレバーを形成するこ
とが難かしいなどの問題点を有していた。Problems to be Solved by the Invention However, with the above configuration, forming a high specific elasticity material by vapor deposition or other methods on a metal substrate cut to a certain predetermined length is not suitable for mass production, and furthermore, It is extremely difficult to taper a metal substrate with a height of about 5 to 6 mm, and there are problems such as a lack of reliability due to variations in shape. In addition, the method of forming a high specific elasticity material by vapor deposition or other methods on a continuous tapered metal base has high mass productivity, but because the thickness of the metal base is not constant, the temperature of the small diameter part is high when energized. , since the temperature of the large-diameter part becomes low, the temperature distribution of the metal substrate will not be constant, making it difficult to obtain uniformity of the deposited film. Also, if the heating temperature becomes high, the small-diameter part of the metal substrate will be more likely to melt and cut, so the taper degree will be reduced. However, there were problems in that it was difficult to form large cantilevers.
本発明は上記問題点に鑑み、高比弾性材料膜厚
が一定で、かつ、テーパ度の大きなカンチレバー
を量産性良く安価に提供することのできるカンチ
レバーの製造方法を提供するものである。 In view of the above-mentioned problems, the present invention provides a method for manufacturing a cantilever that can provide a cantilever having a constant high specific elasticity material film thickness and a large degree of taper with good mass productivity and at low cost.
問題点を解決するための手段
上記問題点を解決するために本発明は、金属基
体の外周に機械加工等によりテーパ加工を施し、
大径部と小径部とを所定の間隔で交互に連続的に
形成し、上記金属基体の小径部に上記金属と同種
の金属ワイヤを接触固定により設け、上記金属基
体を通電により加熱し、金属基体の長さ方向に一
定の温度分布を有するように設定し化学蒸着法に
より硼素膜を形成したのち、レーザ加工等の方法
にて上記金属基体を切断しテーパカンチレバーを
形成する。また、化学エツチング等の方法で上記
金属基体だけを除去し、膜厚一定の硼素膜を有す
るテーパーパイプ状カンチレバーを形成するもの
である。Means for Solving the Problems In order to solve the above problems, the present invention provides a method of tapering the outer periphery of a metal base by machining or the like.
Large diameter portions and small diameter portions are formed alternately and continuously at predetermined intervals, a metal wire of the same type as the metal is provided in the small diameter portion of the metal base by contact fixing, the metal base is heated by energization, and the metal After forming a boron film by chemical vapor deposition while setting the temperature distribution to be constant in the longitudinal direction of the base, the metal base is cut by a method such as laser processing to form a taper cantilever. Further, only the metal substrate is removed by a method such as chemical etching to form a tapered pipe-shaped cantilever having a boron film having a constant thickness.
作 用
本発明は上記した構成によつて、金属基体の小
径部に上記金属と同種の金属ワイヤを接触固定に
より設け、上記金属基体を通電すれば長さ方向の
温度分布がほぼ一定とるため、化学蒸着法により
得られた硼素膜の膜厚は一定となり、しかも金属
基体が加熱により溶断しにくいため、安定した信
頼性の高いカンチレバーの製造が可能となり、量
産性良く安価なカンチレバーを製造することがで
きる。Effects According to the present invention, a metal wire of the same type as the above-mentioned metal is provided in the small diameter portion of the metal base by contact fixation, and when the metal base is energized, the temperature distribution in the length direction becomes almost constant. The thickness of the boron film obtained by chemical vapor deposition is constant, and the metal base is difficult to melt due to heating, so it is possible to manufacture stable and reliable cantilevers, and it is possible to manufacture cantilevers that are mass-producible and inexpensive. I can do it.
実施例
以下本発明の一実施例のカンチレバーの製造方
法について図面を参照しながら説明する。Example Hereinafter, a method for manufacturing a cantilever according to an example of the present invention will be described with reference to the drawings.
第１図は本発明のカンチレバーの製造方法を示
し、第１図ａは製造装置７を示す概略図、第１図
ｂは金属基体８の温度分布図、第１図ｃは硼素膜
９が形成された断面図を示す。第１図ｄは硼素膜
だけのテーパーパイプカンチレバーの断面図を示
す。 FIG. 1 shows a method for manufacturing a cantilever according to the present invention, FIG. 1a is a schematic diagram showing a manufacturing apparatus 7, FIG. 1b is a temperature distribution diagram of a metal substrate 8, and FIG. A cross-sectional view is shown. FIG. 1d shows a cross-sectional view of a tapered pipe cantilever with only a boron film.
金属基体であるタンタルTa棒８（〓0.3mm）に
機械加工を施し、〓0.3mmの大径部１０と〓0.15
mmの小径部１１を長さ５mmの間隔で交互に設け、
テーパ加工を施す。 A tantalum Ta bar 8 (0.3 mm), which is a metal base, is machined to form a large diameter part 10 of 0.3 mm and a large diameter part 10 of 0.15 mm.
mm small diameter portions 11 are provided alternately at intervals of 5 mm in length,
Apply taper processing.
次にこのテーパ加工された金属基体８の小径部
１１に金属基体８と同種のタンタルTaワイヤ１
２（〓0.1mm）を接触固定により設ける。次に、
三塩化硼素（BCl3）と水素（H2）との混合ガス
１３を導入し、減圧化学蒸着（Chemical Vapor
Deposition；例えば特公昭58−41350号公報参照）
にて硼素膜を形成する。この場合、金属基板８の
小径部１１に金属ワイヤ１２が設けられており、
金属基体８の小径部１１で発生した熱の一部が金
属ワイヤ１２に伝わり放熱され、従つてその温度
分布は第１図ｂに示されるように金属基体の長さ
方向にほぼ一定になるため（第１図ｂのＡ）、膜
厚の均一な硼素膜の形成される。しかし、金属ワ
イヤが設けられていない場合は、金属基体の小径
部１１の電気抵抗Ｒは大きいため一定の電流ｉを
印加した場合、金属基体に発生するジユール熱
（i2Rに比例する）のため小径部１１の温度は高く
大径部１０の温度は低くなり金属基体の温度分布
は一定とならない（第１図ｂのＢ）、従つて化学
蒸着法により成形される硼素膜の膜厚にむらが生
じ加熱温度が高い場合など金属基体の小径部で溶
断することもあり得る。 Next, a tantalum Ta wire 1 of the same type as the metal base 8 is attached to the small diameter portion 11 of the tapered metal base 8.
2 (〓0.1mm) is provided by contact fixation. next,
A mixed gas 13 of boron trichloride (BCl 3 ) and hydrogen (H 2 ) is introduced, and reduced pressure chemical vapor deposition (Chemical Vapor Deposition) is performed.
Deposition; for example, see Japanese Patent Publication No. 58-41350)
A boron film is formed. In this case, a metal wire 12 is provided in the small diameter portion 11 of the metal substrate 8,
A part of the heat generated in the small diameter portion 11 of the metal base 8 is transmitted to the metal wire 12 and radiated, so that the temperature distribution is almost constant in the length direction of the metal base as shown in FIG. 1b. (A in FIG. 1b), a boron film having a uniform thickness is formed. However, in the case where no metal wire is provided, the electric resistance R of the small diameter portion 11 of the metal base is large, so when a constant current i is applied, the Joule heat (proportional to i 2 R) generated in the metal base is Therefore, the temperature of the small diameter part 11 is high and the temperature of the large diameter part 10 is low, and the temperature distribution of the metal substrate is not constant (B in Figure 1b). Therefore, the thickness of the boron film formed by chemical vapor deposition is If unevenness occurs and the heating temperature is high, melting may occur at a small diameter portion of the metal base.
本発明のカンチレバーの製造法は、金属基体の
温度分布がほヾ一定となるため第１図ｃに示され
るように、硼素膜の均一なカンチレバーが製造さ
れる。 In the cantilever manufacturing method of the present invention, the temperature distribution of the metal substrate is almost constant, so that a cantilever with a uniform boron film can be manufactured as shown in FIG. 1c.
次に硼素膜９の形成された金属基体８を所定の
長さに切断し、化学エツチングにより金属基体８
を除去し、硼素膜９だけで形成されたカンチレバ
ーの断面図を第１図ｄに示す。 Next, the metal base 8 on which the boron film 9 has been formed is cut into a predetermined length, and the metal base 8 is etched by chemical etching.
FIG. 1d shows a cross-sectional view of a cantilever formed of only the boron film 9 after removing the boron film 9.
金属基体としてはタングステンＷやチタンTi、
鉄Feなども有効であり、硼素膜形成方法として
は、プラズマ化学蒸着や常圧化学蒸着なども有効
である。 Metal substrates include tungsten W, titanium Ti,
Iron (Fe) is also effective, and plasma chemical vapor deposition and normal pressure chemical vapor deposition are also effective as methods for forming boron films.
金属基体の小径部に設ける金属ワイヤは加熱条
件の関係上金属基体と同種の金属が必要である。 The metal wire provided in the small diameter portion of the metal base must be made of the same type of metal as the metal base due to heating conditions.
発明の効果
以上のように本発明は、金属基体の外周に機械
加工等によりテーパ加工を施して、大径部と小径
部とを所定の間隔で交互に連続的に形成し、上記
金属基体の小径部に上記金属と同種の金属ワイヤ
を接触固定により設け、上記金属基体を通電によ
り加熱した場合に長さ方向に一定の温度分布を有
するように設定し、化学蒸着法により膜厚が均一
な硼素膜を形成したのち、レーザ加工等の方法で
上記金属基体を切断したのち、化学エツチング等
の方法で金属基体だけを除去すれば、膜厚の均一
な信頼性の高い硼素膜テーパーパイプ状カンチレ
バーが得られる。このため、振動子の実効質量の
軽減化が図れ、高域の周波数特性の優れたカート
リツジが得られる。また、金属基体の大径部、小
径部を連続的に形成し、同種の金属ワイヤを設け
る方法であるので量産性に優れ、大量に安価に高
比弾性材料よりなるテーパパイプカンチレバーを
提供することができる。Effects of the Invention As described above, the present invention tapers the outer periphery of a metal base by machining or the like to continuously form large diameter parts and small diameter parts alternately at predetermined intervals. A metal wire of the same type as the above metal is fixed in contact with the small diameter part, and the metal base is set so that it has a constant temperature distribution in the length direction when heated by electricity, and a uniform film thickness is obtained by chemical vapor deposition. After forming a boron film, cutting the metal base using a method such as laser processing, and removing only the metal base using a method such as chemical etching, a highly reliable boron film tapered pipe cantilever with a uniform film thickness can be obtained. is obtained. Therefore, the effective mass of the vibrator can be reduced, and a cartridge with excellent high frequency characteristics can be obtained. In addition, since the method involves continuously forming the large diameter part and the small diameter part of the metal base and providing the same type of metal wire, it is excellent in mass production, and it is possible to provide a tapered pipe cantilever made of a material with high specific elasticity in large quantities and at low cost. I can do it.
第１図は本発明の一実施例におけるカンチレバ
ーの製造方法を示し、第１図ａは同製造装置の概
略図、第１図ｂは金属基体の温度分布図、第１図
ｃは硼素膜の形成された金属基体の断面図、第１
図ｄは硼素膜で構成されるテーパパイプカンチレ
バーの断面図、第２図は従来のカンチレバーの製
造方法を示す概略図、第３図は同製造方法の概略
図である。
６……電源、７……カンチレバー製造装置、８
……金属基体、９……硼素膜、１０……金属基体
の大径部、１１……金属基体の小径部、１２……
金属ワイヤ、１３……混合ガス。
FIG. 1 shows a method for manufacturing a cantilever according to an embodiment of the present invention, FIG. 1a is a schematic diagram of the same manufacturing equipment, FIG. Cross-sectional view of the formed metal substrate, first
FIG. d is a cross-sectional view of a tapered pipe cantilever made of a boron film, FIG. 2 is a schematic diagram showing a conventional cantilever manufacturing method, and FIG. 3 is a schematic diagram of the same manufacturing method. 6... Power supply, 7... Cantilever manufacturing equipment, 8
...metal base, 9... boron film, 10... large diameter part of metal base, 11... small diameter part of metal base, 12...
Metal wire, 13...Mixed gas.
Claims (1)
工を施して、0.3mm程度の大径部と0.15mm程度の
小径部とを所定の間隔で交互に連続的に形成し、
上記金属基体の小径部に上記金属と同種の0.1mm
程度の金属ワイヤを接触固定により設け、上記金
属基体を通電により加熱した場合に長さ方向にほ
ぼ一定の温度分布を有するように設定し、化学蒸
着法により膜厚が均一な硼素膜を形成したのち、
レーザ加工等の方法で上記金属基体を所定の間隔
で切断しテーパー形状を形成してなるカンチレバ
ーの製造方法。 ２ 硼素膜の形成された所定間隔に切断された金
属基体を化学エツチング等の方法で金属基体だけ
を除去し、膜厚均一の上記硼素膜だけで形成され
るテーパーパイプ形状を有する特許請求の範囲第
１項記載のカンチレバーの製造方法。[Scope of Claims] 1. Taper processing is performed on the outer periphery of the metal base by machining or the like to continuously form large diameter parts of about 0.3 mm and small diameter parts of about 0.15 mm alternately at predetermined intervals,
0.1mm of the same type of metal as the above metal on the small diameter part of the above metal base.
A metal wire of approximately 100 mL was provided by contact fixation, and the metal base was set so that it had a substantially constant temperature distribution in the length direction when heated by electricity, and a boron film with a uniform thickness was formed by chemical vapor deposition. after,
A method for manufacturing a cantilever, in which the metal base is cut at predetermined intervals using a method such as laser processing to form a tapered shape. 2. A metal base cut at predetermined intervals on which a boron film is formed, and only the metal base is removed by a method such as chemical etching, and the claim has a tapered pipe shape formed only of the boron film with a uniform thickness. 2. A method for manufacturing a cantilever according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16342385A JPS6224403A (en) | 1985-07-24 | 1985-07-24 | Production of cantilever |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16342385A JPS6224403A (en) | 1985-07-24 | 1985-07-24 | Production of cantilever |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6224403A JPS6224403A (en) | 1987-02-02 |
| JPH0542041B2 true JPH0542041B2 (en) | 1993-06-25 |
Family
ID=15773617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16342385A Granted JPS6224403A (en) | 1985-07-24 | 1985-07-24 | Production of cantilever |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6224403A (en) |
-
1985
- 1985-07-24 JP JP16342385A patent/JPS6224403A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6224403A (en) | 1987-02-02 |
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