JPH053735B2 - - Google Patents
Info
- Publication number
- JPH053735B2 JPH053735B2 JP61060901A JP6090186A JPH053735B2 JP H053735 B2 JPH053735 B2 JP H053735B2 JP 61060901 A JP61060901 A JP 61060901A JP 6090186 A JP6090186 A JP 6090186A JP H053735 B2 JPH053735 B2 JP H053735B2
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- opening
- holder
- window material
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔概要〕
マイクロ波プラズマ処理装置にあつて、導波管
１１内を進行するマイクロ波１２の電場に対し垂
直方向に配設される窓材１５を透過した該マイク
ロ波によりプラズマ処理を行う場合に、該窓材１
５を該マイクロ波が通過可能な開口部１６を有す
るホルダ１４によつて保持し、該ホルダ１４を前
記導波管１１に設けた開口部１３に着脱自在に配
設可能とすることにより、装置使用の便宜を図
り、多様なプロセスに対応可能とする。[Detailed Description of the Invention] [Summary] In a microwave plasma processing apparatus, microwaves 12 traveling in a waveguide 11 pass through a window material 15 disposed in a direction perpendicular to the electric field of the microwaves 12. When plasma treatment is performed by
5 is held by a holder 14 having an opening 16 through which the microwave can pass, and the holder 14 is removably installed in the opening 13 provided in the waveguide 11. It is designed to be convenient for use and applicable to a variety of processes.
本発明は、マイクロ波プラズマ処理装置に関
し、特に、導波管内を進行するマイクロ波の電場
に対し垂直方向にマイクロ波透過を配設し、該透
過窓を透過したマイクロ波によりプラズマ処理を
行えるようにした垂直入射方式のマイクロ波プラ
ズマ処理装置に関する。本発明による装置は、例
えば半導体装置のウエハプロセスにおいてウエハ
表面のエツチングや膜生成を行う時に利用され得
る。
The present invention relates to a microwave plasma processing apparatus, and in particular, a microwave transmission device is arranged in a direction perpendicular to the electric field of microwaves traveling in a waveguide, so that plasma processing can be performed using the microwaves transmitted through the transmission window. The present invention relates to a vertical incidence type microwave plasma processing apparatus. The apparatus according to the present invention can be used, for example, when etching a wafer surface or forming a film in a wafer process for semiconductor devices.
第３図には従来形の一例としての垂直入射方式
のマイクロ波プラズム処理装置が断面的に示され
る。この装置はマイクロ波導波管１１と真空処理
室１７とからなり、マイクロ波導波管１１には、
該導波管１１内を進行するマイクロ波１２の電場
に対し垂直方向にマイクロ波透過窓１５′が配設
されている。真空処理室１７は、透過窓１５′に
より封止され、該透過窓１５′に対向して被加工
物１８を載置するステージ１９とガス導入口２０
および排気口２１を備えている。
FIG. 3 shows a cross-sectional view of a vertical incidence type microwave plasma processing apparatus as an example of a conventional type. This device consists of a microwave waveguide 11 and a vacuum processing chamber 17.
A microwave transmission window 15' is arranged in a direction perpendicular to the electric field of the microwave 12 traveling inside the waveguide 11. The vacuum processing chamber 17 is sealed by a transparent window 15', and has a stage 19 on which a workpiece 18 is placed facing the transparent window 15', and a gas inlet 20.
and an exhaust port 21.
透過窓１５′は、導入されるガスの種類すなわ
ちプラズマ処理の内容に応じて異なる窓材が用い
られる。例えば、酸素（O2）ガスのプラズマに
より被加工物の処理を行う時に窓材として、誘電
率が小さくかつ強度的に大きい石英が用いられ
る。また、テトラフルオロメタン（CF4）、ヘキ
サフルオロメタン（C2F6）、トリフルオロメタン
（CHF3）、三フツ化窒素（NF3）、六フツ化硫黄
（SF6）のフツ素系ガスを用いてプラズマ処理を
行う時は、窓材が腐食されるのを防止するために
例えばアルミナが用いられる。この場合、アルミ
ナは石英に比べて熱衝撃に対する性能がそれほど
良くないため、導波管１１の真空処理室１７への
開口面積、すなわち窓材（透過窓１５′）と真空
処理室１７との接触領域１６′、を小さくし、熱
源との接触面積を減少して冷却効果を向上させる
必要がある。 Different window materials are used for the transmission window 15' depending on the type of gas introduced, that is, the content of the plasma treatment. For example, when processing a workpiece with oxygen (O 2 ) gas plasma, quartz, which has a low dielectric constant and high strength, is used as a window material. In addition, fluorine gases such as tetrafluoromethane (CF 4 ), hexafluoromethane (C 2 F 6 ), trifluoromethane (CHF 3 ), nitrogen trifluoride (NF 3 ), and sulfur hexafluoride (SF 6 ) are For example, alumina is used to prevent the window material from being corroded when plasma treatment is performed using the window material. In this case, since alumina does not have much better performance against thermal shock than quartz, the opening area of the waveguide 11 to the vacuum processing chamber 17, that is, the contact between the window material (transmission window 15') and the vacuum processing chamber 17 It is necessary to reduce the area 16' and reduce the contact area with the heat source to improve the cooling effect.
上述した従来形の垂直入射方式のマイクロ波プ
ラズマ処理装置においては、導波管１１の真空処
理室１７への開口面積が一定であるため、例えば
被加工物のプラズマ処理の内容に応じて窓材の大
きさまたは形状の変更を行う必要が生じた場合に
は、各処理の内容に応じた開口面積または形状を
それぞれ有する個別の装置を用いて対処しなけれ
ばならない。このため、多様なプロセスに対応す
る場合には極めて不便であり、その一方では、窓
材の強度、加工特性等により窓材の大きさまたは
形状を統一することは困難であるという問題点が
あつた。
In the conventional vertical incidence type microwave plasma processing apparatus described above, since the opening area of the waveguide 11 to the vacuum processing chamber 17 is constant, the window material may be adjusted depending on the content of the plasma processing of the workpiece, for example. If it becomes necessary to change the size or shape of the opening, it is necessary to use separate devices each having an opening area or shape depending on the content of each process. This is extremely inconvenient when dealing with a variety of processes, and on the other hand, there is the problem that it is difficult to standardize the size or shape of window materials due to their strength, processing characteristics, etc. Ta.
本発明は、上述した従来形における問題点に鑑
み創作されたもので、装置使用の便宜を図り、多
様なプロセスに速やかに対応することができるマ
イクロ波プラズマ処理装置を提供することを目的
としている。 The present invention was created in view of the above-mentioned problems with the conventional type, and aims to provide a microwave plasma processing apparatus that is convenient to use and can be quickly adapted to various processes. .
上述した問題点は、本発明によるマイクロ波プ
ラズマ処理装置の一実施例を示す第１図に示され
るように、マイクロ波１２の発生装置１０と、発
生装置１０に接続され、進行するマイクロ波１２
の電場に垂直方向に開口部１３を有する導波管１
１と、開口部１３に着脱自在に配設され、前記マ
イクロ波１２が透過する窓材１５を保持すると共
に窓材１５を透過したマイクロ波１２が通過する
開口部１６を有するホルダ１４と、ホルダ１４に
よつて封止され、ホルダの開口部１６を通して導
入されるマイクロ波１２によりプラズマ処理が行
われる真空処理室１７と、を備えてなるマイクロ
波プラズマ処理装置によつて解決される。
The above-mentioned problems can be solved by the microwave 12 generator 10 and the propagating microwave 12 connected to the generator 10, as shown in FIG.
A waveguide 1 having an opening 13 in a direction perpendicular to the electric field of
1, a holder 14 which is detachably disposed in the opening 13 and has an opening 16 that holds the window material 15 through which the microwave 12 passes and through which the microwave 12 transmitted through the window material 15 passes; 14, and a vacuum processing chamber 17 in which plasma processing is performed by microwaves 12 introduced through an opening 16 of a holder.
本発明によるマイクロ波プラズマ処理装置にお
いては、導波管１１内を進行するマイクロ波１２
の電場に対し垂直方向に設けられた開口部１３に
ホルダ１４が着脱自在に配設され、窓材１５はこ
のホルダ１４によつて保持されるようになつてい
るため、窓材１５の大きさまたは形状を統一する
必要性が解消され、また、仮にプラズマ処理の内
容の変更すなわち窓材１５と真空処理室１７との
接触面積（ホルダ１４に設けられた開口部１６の
面積に相当）の変更の必要性が生じた場合でも、
装置全体で対応する必要はなく、大きさまたは形
状が異なる開口部を備えた別のホルダと交換する
だけで充分であるので、装置使用の便宜を図るこ
とができ、多様なプロセスに対して迅速な対応が
可能となる。
In the microwave plasma processing apparatus according to the present invention, the microwave 12 traveling inside the waveguide 11
A holder 14 is removably disposed in the opening 13 provided perpendicular to the electric field, and the window material 15 is held by the holder 14, so that the size of the window material 15 is Alternatively, the need to unify the shape is eliminated, and the content of the plasma treatment is temporarily changed, that is, the contact area between the window material 15 and the vacuum processing chamber 17 (corresponding to the area of the opening 16 provided in the holder 14) is changed. Even if the need arises,
It is not necessary to adapt the entire device, but simply replacing it with another holder with an opening of a different size or shape allows for convenient use of the device and is quick for a wide variety of processes. This makes it possible to take appropriate measures.
第１図には本発明の一実施例としてのマイクロ
波プラズマ処理装置が断面的に示される。
FIG. 1 shows a cross-sectional view of a microwave plasma processing apparatus as an embodiment of the present invention.
第１図において１０はマイクロ波発生装置であ
つて、例えばマグネトロンからなり、2.45GHzの
マイクロ波１２を発生する。このマイクロ波１２
は導波管１１内に導入され、導波管１１には、進
行するマイクロ波１２の電場に垂直方向に、すな
わち従来の電場が大気（導波管側）と真空処理室
１７との界面に平行な垂直入射方式の窓とは90°
ずれた状態で開口部１３が設けられている。この
開口部１３には高純度なアルミニウムからなるホ
ルダ１４が着脱自在に配設され、石英、アルミナ
等で作られた窓材１５はこのホルダ１４によつて
保持されるようになつている。また、ホルダ１４
には窓材１５を透過したマイクロ波１２を真空処
理室１７に導入するための開口部１６が設けられ
ている。真空処理室１７は、ホルダ１４および窓
材１５により封止され、窓材１５に対向する被加
工物１８を載置するテスージ１９と、図示しない
公知のガス供給系および排気系にそれぞれ連結さ
れたガス導入口２０、排気口２１とを備えてい
る。 In FIG. 1, reference numeral 10 denotes a microwave generator, which is composed of, for example, a magnetron, and generates microwaves 12 of 2.45 GHz. This microwave 12
is introduced into the waveguide 11, and the waveguide 11 has a conventional electric field perpendicular to the electric field of the traveling microwave 12 at the interface between the atmosphere (waveguide side) and the vacuum processing chamber 17. Parallel normal incidence window is 90°
The openings 13 are provided in a shifted state. A holder 14 made of high-purity aluminum is removably disposed in this opening 13, and a window material 15 made of quartz, alumina, etc. is held by this holder 14. In addition, the holder 14
An opening 16 is provided in which the microwave 12 transmitted through the window material 15 is introduced into the vacuum processing chamber 17 . The vacuum processing chamber 17 is sealed by a holder 14 and a window material 15, and is connected to a tray 19 on which a workpiece 18 is placed facing the window material 15, and to a known gas supply system and an exhaust system (not shown). It has a gas inlet 20 and an exhaust port 21.
第２図にはホルダ１４の具体的な一例が一部切
断された状態で示される。このホルダ１４に２個
の矩形の開口部１６ａ，１６ｂが設けられてお
り、該開口部の間隔は好適にはλ／４（λはマイ
クロ波１２の波長）に設定される。第２図の例示
はホルダ１４の開口部の形状が矩形の場合である
が、それに限らず、被加工物のプラズマ処理の内
容、窓材の材質等に応じて円形、単一の矩形等任
意の形状に設定可能であることはもちろんであ
り、少なくとも、窓材１５を透過したマイクロ波
１２が通過可能な開口部を備えていれば充分であ
る。 FIG. 2 shows a specific example of the holder 14 in a partially cut-away state. This holder 14 is provided with two rectangular openings 16a and 16b, and the interval between the openings is preferably set to λ/4 (λ is the wavelength of the microwave 12). In the example shown in FIG. 2, the shape of the opening of the holder 14 is rectangular, but the shape is not limited to this, and can be a circle, a single rectangle, etc. depending on the details of the plasma treatment of the workpiece, the material of the window material, etc. Of course, it is possible to set the shape to the following, and it is sufficient that at least an opening is provided through which the microwave 12 transmitted through the window material 15 can pass.
第１図に示される構成から明らかなように、導
波管１１内を進行するマイクロ波１２の電場に対
し垂直方向に配設される窓材１５は、任意の形状
をもつ開口部１６を有するホルダ１４と共に着脱
自在であるので、被加工物の処理の内容が異なる
ような場合でも、共通の装置を用いて多様なプロ
セスに対応することができる。 As is clear from the configuration shown in FIG. 1, the window material 15 arranged perpendicularly to the electric field of the microwave 12 traveling inside the waveguide 11 has an opening 16 having an arbitrary shape. Since it is removable together with the holder 14, even if the processing contents of the workpieces are different, a common device can be used to handle various processes.
以上説明したように本発明によれば、被加工物
の処理の内容を変更する必要が生じた場合でも共
通の装置で対応することができ、装置使用の便宜
と共に多様なプロセスへの迅速の対応を図ること
ができる。
As explained above, according to the present invention, even if it becomes necessary to change the processing content of a workpiece, it can be handled with a common device, making it convenient to use the device and quickly responding to various processes. can be achieved.
第１図は本発明によるマイクロ波プラズマ処理
装置の一実施例を示す側面断面図、第２図は第１
図に示されるホルダ１４の一例を示す斜視図、第
３図は従来形の一例を示す側面断面図、である。
１０……マイクロ波発生装置、１１……導波
管、１２……マイクロ波、１３……開口部、１４
……ホルダ、１５……窓材、１６，１６ａ，１６
ｂ……開口部、１７……真空処理室。
FIG. 1 is a side sectional view showing one embodiment of a microwave plasma processing apparatus according to the present invention, and FIG.
FIG. 3 is a perspective view showing an example of the holder 14 shown in the figure, and FIG. 3 is a side sectional view showing an example of the conventional type. 10... Microwave generator, 11... Waveguide, 12... Microwave, 13... Opening, 14
...Holder, 15...Window material, 16, 16a, 16
b...opening, 17...vacuum processing chamber.
Claims (1)
波１２の電場に垂直方向に開口部１３を有する導
波管１１と、 該開口部１３に着脱自在に配設され、前記マイ
クロ波１２が透過する窓材１５を保持すると共に
該窓材１５を透過したマイクロ波１２が通過する
開口部１６を有するホルダ１４と、 該ホルダ１４によつて封止され、該ホルダの開
口部１６を通して導入される前記マイクロ波１２
によりプラズマ処理が行われる真空処理室１７
と、を備えてなるマイクロ波プラズマ処理装置。[Scope of Claims] 1. A generator 10 for microwaves 12; a waveguide 11 connected to the generator 10 and having an opening 13 in a direction perpendicular to the electric field of the microwave 12 traveling; and the opening 13. a holder 14 which is removably disposed in a holder 14 and has an opening 16 which holds a window material 15 through which the microwave 12 passes and through which the microwave 12 transmitted through the window material 15 passes; The microwave 12 is sealed and introduced through the opening 16 of the holder.
Vacuum processing chamber 17 where plasma processing is performed by
A microwave plasma processing device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6090186A JPS62222638A (en) | 1986-03-20 | 1986-03-20 | Microwave plasma processing unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6090186A JPS62222638A (en) | 1986-03-20 | 1986-03-20 | Microwave plasma processing unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62222638A JPS62222638A (en) | 1987-09-30 |
| JPH053735B2 true JPH053735B2 (en) | 1993-01-18 |
Family
ID=13155721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6090186A Granted JPS62222638A (en) | 1986-03-20 | 1986-03-20 | Microwave plasma processing unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62222638A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661103B2 (en) * | 1988-02-23 | 1997-10-08 | 三菱電機株式会社 | Semiconductor manufacturing equipment |
| JP2008091176A (en) * | 2006-09-29 | 2008-04-17 | Tokyo Electron Ltd | Microwave plasma treatment apparatus, one-body type slot forming member, manufacturing method and method of use for microwave plasma treatment device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208838A (en) * | 1983-05-13 | 1984-11-27 | Fujitsu Ltd | Microwave plasma treating device |
| JPS6025234A (en) * | 1983-07-21 | 1985-02-08 | Fujitsu Ltd | Microwave plasma processor |
-
1986
- 1986-03-20 JP JP6090186A patent/JPS62222638A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208838A (en) * | 1983-05-13 | 1984-11-27 | Fujitsu Ltd | Microwave plasma treating device |
| JPS6025234A (en) * | 1983-07-21 | 1985-02-08 | Fujitsu Ltd | Microwave plasma processor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62222638A (en) | 1987-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5364519A (en) | Microwave plasma processing process and apparatus | |
| WO1996019825A1 (en) | Apparatus for surface conditioning | |
| USRE36224E (en) | Microwave plasma processing process and apparatus | |
| JPH053735B2 (en) | ||
| JPH07272897A (en) | Microwave plasma device | |
| JP3703877B2 (en) | Plasma device | |
| JPS6411403A (en) | Plasma generation reacting device | |
| JP2808888B2 (en) | Microwave plasma device | |
| JPS58213427A (en) | Plasma etching device | |
| JPS62130524A (en) | Plasma processing apparatus | |
| JP2967681B2 (en) | Microwave plasma processing equipment | |
| JP3815868B2 (en) | Plasma processing equipment | |
| WO1996003019A1 (en) | Plasma processing device | |
| JPS62222639A (en) | Microwave plasma processing method | |
| JP3042347B2 (en) | Plasma equipment | |
| JPH079884B2 (en) | Photo-excitation process equipment | |
| JPH053734B2 (en) | ||
| JPH02141576A (en) | Plasma process device | |
| JPS6370526A (en) | Microwave plasma treatment device | |
| JP2845663B2 (en) | Reactive ion etching equipment | |
| JP3092383B2 (en) | Microwave plasma processing equipment | |
| JP2505741B2 (en) | Microwave plasma processing equipment | |
| JPH034530A (en) | Semiconductor manufacturing device | |
| JPH08298256A (en) | Plasma device | |
| Smith | Dry Etching for Precise Definition of Integrated-Circuit Patterns |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |