JPH0536923B2 - - Google Patents
Info
- Publication number
- JPH0536923B2 JPH0536923B2 JP21163688A JP21163688A JPH0536923B2 JP H0536923 B2 JPH0536923 B2 JP H0536923B2 JP 21163688 A JP21163688 A JP 21163688A JP 21163688 A JP21163688 A JP 21163688A JP H0536923 B2 JPH0536923 B2 JP H0536923B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- resistor
- metal powder
- plasma torch
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000843 powder Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000007751 thermal spraying Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Light Guides In General And Applications Therefor (AREA)
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
Description
ａ 産業上の利用分野
本発明は溶射技術を用いた抵抗体の製造方法に
関する。特にセラミツクスヒータに利用すること
ができる抵抗体の製造方法に関する。
ｂ 従来の技術
セラミツクスヒータと呼ばれるものには、正特
性サーミスタ（PTC）の様に発熱体自体が酸化
物系のセラミツクスであり、焼結という技術によ
りつくられるものの他に、アルミナ等のセラミツ
クスの未焼成シートに抵抗体のペーストを印刷
し、高温の還元性雰囲気で長時間焼成を行なうこ
とにより作られるものがある。
前者は、発熱温度の自己制御性という機能を持
つ反面、焼成により作られる為、均一なものを作
るのがむずかしく歩留が悪い。また後者は焼成に
より作られる為、電気的・熱的に良好な特性を持
つ反面、使用する抵抗体が限られ高温の還元性雰
囲気を使用してその長時間の焼成を必要としてい
た。
またプラズマトーチの中に金属等の導電性粉末
とセラミツクス等の非導電性物質を混合した材料
粉末を供給し、プラズマトーチで粉末の全部また
は一部を溶融し、回路パターンに対応する穴が穿
設されたマスクで被覆された基板の上に上記溶融
粉末を溶射することにより抵抗体を製造する方法
がある。
ｃ 発明が解決しようとする課題
焼結工程を含む製造方法においては、炉の温度
ムラや焼結の条件が特性に大きく影響し、均一な
ものを作るのがむずかしい。焼成工程を含む製造
方法においては、高温の還元性という特殊な雰囲
気を必要とする上、外部への接続端子の取付けに
も特殊な処理が必要となる。また従来の溶射技術
による抵抗体の製造方法においては、溶射に適し
た材料粉末の選択の自由度が小さく、必要な抵抗
値、電力値の抵抗体を製造することが困難であ
る。
プラズマトーチの中の温度は高い。しかしプラ
ズマトーチの中の流速も速い。したがつて金属等
の導電性粉末とセラミツクス等の非導電性物質が
充分に昇温せず相互間の結合力および基板に対す
る結合力が不充分になることがある。これに対処
するためにプラズマの温度を更に上げると、基板
が反つたり、または穴があくという障害に加え
て、材料粉末の昇華等により粉末の組成が変化す
ることがある。また流速を遅くすると目づまりを
起こすという問題も生じる。
さらに金属粉末とセラミツクス粉末の混合物
は、搬送が困難である。その理由は、組成粉末の
比重、凝集性、粒径等が異なるからである。
本発明は、高温・長時間の焼結工程、焼成工程
を必要とせず、抵抗値、電力値の選択の自由度が
高い抵抗体の製造法を提案することを課題とす
る。
ｄ 課題を解決するための手段
上記課題は、目的とする回路パターンに対応す
る穴が穿設されたマスクを基板の上に載置し、金
属粉末と、熱伝導率が高く電気伝導度の小さい半
導体または絶縁体の粉末の混合物からなる抵抗体
材料をプラズマトーチに用いてマスクの上から溶
射することにより、基板上に抵抗体を形成する抵
抗体の製造方法において、上記金属粉末がアルミ
ニユームによつてコーテイングされた粉末であ
り、上記金属粉末と上記半導体または絶縁体の粉
末は、混合される前に別々にプラズマトーチの中
に送り込まれ、プラズマトーチの中で混合される
ことを特徴とする溶射技術を用いた抵抗体の製造
方法によつ解決された。
ｅ 作用
金属粉末が融点が低い金属であるアルミニユー
ムによつてコーテイングされているので、プラズ
マトーチの中に抵抗体材料が送り込まれると速や
かに溶融し、基板上に形成された抵抗体内の粒子
間結合力および抵抗体と基板の結合力が強くな
る。
また金属粉末は、半導体または絶縁体からなる
粉末とは独立にプラズマトーチに送られるので、
金属粉末の搬送に最適な条件で金属粉末を送り、
半導体または絶縁体粉末に最適な条件でこれらの
粉末を送ることができる。したがつて、搬送部に
おける目づまり、あるいは組成の不本意な変化を
避けることができる。また随時に組成比を変える
ことができるので、比抵抗率の異なる抵抗体を容
易に作ることができる。
次に本発明の方法で得られる抵抗体の特徴を説
明する。
断面積を１とした時、体積比で10％セラミツク
スを混合すると断面積では金属分も10％減少し、
20％を混合すると同様に20％減少する。ところが
単に膜厚を90％又は80％とした場合と異なり、抵
抗値はそれぞれ90％、80％よりも大きく変化す
る。これは導電性粒子間に絶縁性材料が入り込ん
でくる為で、導電性粒子どうしの結合度が小なく
なるからである。
この時、同じ膜厚として形成させた時、導体の
割合が少なくなつても、電流容量は急激に減少し
ない。これは単なる膜厚制御法と異なり、発熱す
る導電性粒子間に熱伝導性の良い絶縁性材料が存
在するため、これが導電性粒子で発生する熱をす
みやかに拡散させる役割をしており、溶断までの
許容電流を大きくするからである。
混合比と抵抗率の関係を具体的な例で示す。絶
縁体に高抵抗の材料を使用した実験では以下の結
果を得ている。混合比は重量比で示している。
a. Industrial Application Field The present invention relates to a method for manufacturing a resistor using thermal spraying technology. In particular, the present invention relates to a method of manufacturing a resistor that can be used in ceramic heaters. b. Conventional technology In ceramic heaters, the heating element itself is made of oxide-based ceramics, such as a positive temperature coefficient thermistor (PTC). Some are made by printing a resistor paste on a fired sheet and firing it for a long time in a high-temperature reducing atmosphere. The former has the function of self-controlling the heat generation temperature, but because it is produced by firing, it is difficult to produce uniform products and the yield is low. Furthermore, since the latter is produced by firing, while it has good electrical and thermal properties, it is limited in the number of resistors that can be used and requires long firing in a high-temperature reducing atmosphere. In addition, material powder, which is a mixture of conductive powder such as metal and non-conductive material such as ceramics, is supplied into the plasma torch, and the plasma torch melts all or part of the powder, making holes corresponding to the circuit pattern. There is a method of manufacturing a resistor by spraying the molten powder onto a substrate covered with a mask provided. c. Problems to be Solved by the Invention In manufacturing methods that include a sintering process, uneven temperature in the furnace and sintering conditions greatly affect the characteristics, making it difficult to produce uniform products. A manufacturing method that includes a firing process requires a special high-temperature reducing atmosphere, and also requires special treatment for attaching connection terminals to the outside. Furthermore, in the method of manufacturing a resistor using conventional thermal spraying technology, there is little freedom in selecting material powder suitable for thermal spraying, and it is difficult to manufacture a resistor with the required resistance and power values. The temperature inside the plasma torch is high. However, the flow velocity inside the plasma torch is also fast. Therefore, the temperature of a conductive powder such as a metal and a non-conductive substance such as a ceramic may not be raised sufficiently, resulting in insufficient bonding strength between them and with respect to the substrate. If the temperature of the plasma is further increased to deal with this problem, in addition to problems such as warping of the substrate or formation of holes, the composition of the powder may change due to sublimation of the material powder. Furthermore, if the flow rate is slowed down, there is also the problem of clogging. Furthermore, mixtures of metal powder and ceramic powder are difficult to transport. The reason for this is that the powder compositions differ in specific gravity, cohesiveness, particle size, etc. An object of the present invention is to propose a method for manufacturing a resistor that does not require a high-temperature and long-time sintering process or a firing process and allows a high degree of freedom in selecting resistance values and power values. d Means for solving the problem The above problem is achieved by placing a mask with holes corresponding to the desired circuit pattern on a substrate, and using a metal powder with high thermal conductivity and low electrical conductivity. In a method for manufacturing a resistor in which a resistor material consisting of a mixture of semiconductor or insulator powder is sprayed onto a mask using a plasma torch to form a resistor on a substrate, the metal powder is coated with aluminum. The metal powder and the semiconductor or insulator powder are separately fed into a plasma torch before being mixed and are mixed in the plasma torch. The problem was solved by a method of manufacturing a resistor using technology. e Effect Since the metal powder is coated with aluminum, which is a metal with a low melting point, when the resistor material is fed into the plasma torch, it melts quickly, and bonds between particles within the resistor formed on the substrate are formed. The force and the bonding force between the resistor and the substrate become stronger. Additionally, the metal powder is sent to the plasma torch independently of the semiconductor or insulator powder, so
Transporting metal powder under optimal conditions for transporting metal powder,
Semiconductor or insulator powders can be delivered under optimal conditions. Therefore, clogging in the conveying section or undesired changes in composition can be avoided. Furthermore, since the composition ratio can be changed at any time, resistors with different specific resistivities can be easily produced. Next, the characteristics of the resistor obtained by the method of the present invention will be explained. When the cross-sectional area is assumed to be 1, if 10% by volume of ceramics is mixed, the metal content in the cross-sectional area will also decrease by 10%.
Mixing 20% will reduce it by 20% as well. However, unlike the case where the film thickness is simply set to 90% or 80%, the resistance value changes more than 90% or 80%, respectively. This is because the insulating material enters between the conductive particles, reducing the degree of bonding between the conductive particles. At this time, when the film is formed with the same thickness, the current capacity does not sharply decrease even if the proportion of the conductor decreases. This method differs from a simple film thickness control method in that there is an insulating material with good thermal conductivity between the conductive particles that generate heat, so this plays the role of quickly dispersing the heat generated by the conductive particles, causing fusing. This is because it increases the allowable current up to. The relationship between mixing ratio and resistivity will be shown with a specific example. In experiments using high-resistance materials as insulators, we obtained the following results. The mixing ratio is shown in weight ratio.
【表】
この結果は、使用する材料で異なるのはもちろ
ん、材料の粒子の大きさ、材料の組合せによつて
も変化する。従つてこれら各要素を制御すること
によつて、自由に抵抗率を設定できる。上の例は
混合比を明確にする為、粉どうしを一定の割合で
混合し、これを用いて溶射を行なつたものであ
る。この場合は混合したものを特定の抵抗率の材
料として扱うことができるが、抵抗率の調整を行
なう必要がある時や、いろいろな抵抗値を出す必
要のある時には、２種類の材料を別々に供給しそ
れぞれの供給量を制御することにより、これに対
応することが簡単にできる。
一般的に抵抗材料といわれるもので抵抗率が
Ni−Cr系で108μΩ・cm、Fe−Cr−Al系で
145μΩ・cm止まりである。これに対し溶射膜とい
う気孔の多い状態ではあるけれども混合溶射によ
ると10000μΩ・cm（1.0×10-2Ω・cm）〜
30000μΩ・cm（3.0×10-2Ω・cm）程度までは発熱
させるという機能を発揮し得る状態を得ている。
電力印加条件にかなりの制約があるが、抵抗率と
してはさらにこれの100倍〜1000倍（1Ω・cm〜
10Ω・cm）も可能である。
なお、アルミナ・セラミツクス基板と金属の熱
膨張の差は大きいので金属膜は熱膨張により剥離
する可能性がある。しかし本発明においては、金
属と半導体または絶縁体の混合物からなる膜で抵
抗体が形成されるので、熱膨張の差を小さくする
ことができる。このように材料の組合せを変える
ことにより熱膨張率をも制御することができる。
ｆ 実施例
第１図は本発明に係る抵抗体を製造する方法を
実施するための装置の概念図である。
直流電源装置PSで発生した高電圧がプチズマ
トーチ１のアノードＡとカソードＫの間に印加さ
れる。アノードＡとカソードＫは絶縁体１を介し
て接続され、アノードＡ、絶縁体Ｉ、カソートＫ
は冷却水供給装置WSから供給される冷却水で冷
却される。
アークガス供給装置GSから供給されるアーク
ガスＧは、アノードＡとカソードＫの間の強い電
界により電離し、プラズマジエツトＰが発生す
る。
金属粉末Ｍは第１の材料粉末供給装置FD１か
らプラズマトーチ１内に供給される。また、半導
体または絶縁粉末Ｃは第２の材料粉末供給装置
FD２からプラズマトーチ１内に供給される。そ
れぞれの粉末の搬送のためには、ボンベＢ１，Ｂ
２からキヤリヤガスが用いられる。両者の比率お
よび供給量は粉末供給制御FCONにおいて例えば
材料粉末供給装置のノズル開度調整、キヤリヤガ
ス流量調整等の手段により、制御される。この結
果、プラズマジエツトＰ中に所定の比率で所定の
流量速度で金属粉末Ｍと半導体または絶縁体粉末
Ｃが供給される。
プラズマジエツトＰによつて全部または一部溶
融した粉末は、マスク２で覆われた基板３の上に
溶射される。基板３は駆動部Ｄによつて前後左右
に移動し、駆動部Ｄは駆動制御部DCONによつ
て制御される。
この結果、セラミツクスから成る基板３の上
に、例えば第２図に示すような回路パターンの抵
抗体４が形成される。第３図は第２図のＡ−Ａ断
面図である。
金属粉末としてはNi合金、ステンレス合金、
Co系合金、Al等を使用することができ、半導体
粉末としてはTiO2、ZnO、フエライト系合金等
を使用することができ、絶縁体粉末としてはアル
ミナ、MgO、MgO・Al2O3（スピネル）等あるい
は熱伝導率はやや小さいがAl2O3・SiO2（ムライ
ト）、ZrO2（ジルコニア）等を使用することがで
きる。
第４図は金属粉末の一例としてのNi合金粉末
をAlコーテイングした微粒子の拡大図、第５図
は絶縁体粉末の一例としてのアルミナ粉末の拡大
図である。
第６図は第４図の金属粉末と第５図の絶縁体粉
末の混合物を溶射して得られる抵抗体の概念的断
面図である。
ｇ 発明の効果
金属粉末がアルミニユームでコーテイングされ
ているので、粒子間の結合力および基板の結合力
が大きい。
金属粉末の搬送と、半導体または絶縁体の搬送
を別々に行うので、最適条件で各粉末を搬送でき
る。また随時に、組成比を変更することができ、
容易に比抵抗の異なる抵抗体を作ることができ
る。[Table] This result varies depending on the material used, as well as the particle size of the material and the combination of materials. Therefore, by controlling each of these elements, the resistivity can be freely set. In the above example, in order to clarify the mixing ratio, the powders were mixed at a fixed ratio, and this was used for thermal spraying. In this case, the mixture can be treated as a material with a specific resistivity, but when it is necessary to adjust the resistivity or produce various resistance values, the two types of materials can be treated separately. This can be easily accommodated by supplying and controlling the respective supply amounts. It is generally called a resistive material, and its resistivity is
108μΩ・cm for Ni-Cr system, 108μΩ・cm for Fe-Cr-Al system
It is limited to 145μΩ・cm. On the other hand, although it is a thermally sprayed film with many pores, mixed thermal spraying has a resistance of 10,000 μΩ・cm (1.0×10 -2 Ω・cm) ~
We have achieved a state in which it can perform the function of generating heat up to about 30,000μΩ・cm (3.0×10 -2 Ω・cm).
There are considerable restrictions on the power application conditions, but the resistivity is 100 to 1000 times higher (1 Ω cm ~
10Ω・cm) is also possible. Note that since there is a large difference in thermal expansion between the alumina ceramic substrate and the metal, there is a possibility that the metal film will peel off due to thermal expansion. However, in the present invention, since the resistor is formed of a film made of a mixture of metal and semiconductor or insulator, the difference in thermal expansion can be reduced. By changing the combination of materials in this way, the coefficient of thermal expansion can also be controlled. f Example FIG. 1 is a conceptual diagram of an apparatus for carrying out the method for manufacturing a resistor according to the present invention. A high voltage generated by a DC power supply PS is applied between an anode A and a cathode K of a petit sma torch 1. Anode A and cathode K are connected through insulator 1, and anode A, insulator I, cathode K
is cooled by cooling water supplied from the cooling water supply device WS. Arc gas G supplied from arc gas supply device GS is ionized by a strong electric field between anode A and cathode K, and a plasma jet P is generated. Metal powder M is supplied into plasma torch 1 from first material powder supply device FD1. Further, the semiconductor or insulating powder C is supplied to the second material powder supply device.
It is supplied into the plasma torch 1 from the FD2. For transporting each powder, cylinders B1 and B are used.
From 2 onwards, a carrier gas is used. The ratio and supply amount of both are controlled in the powder supply control FCON by, for example, adjusting the nozzle opening of the material powder supply device, adjusting the carrier gas flow rate, or the like. As a result, the metal powder M and the semiconductor or insulator powder C are supplied into the plasma jet P at a predetermined ratio and at a predetermined flow rate. The powder, completely or partially melted by the plasma jet P, is sprayed onto a substrate 3 covered with a mask 2. The substrate 3 is moved forward, backward, left and right by a drive section D, and the drive section D is controlled by a drive control section DCON. As a result, a resistor 4 having a circuit pattern as shown in FIG. 2, for example, is formed on the substrate 3 made of ceramic. FIG. 3 is a sectional view taken along the line AA in FIG. 2. Metal powders include Ni alloy, stainless steel alloy,
Co-based alloys, Al, etc. can be used, TiO 2 , ZnO, ferrite-based alloys, etc. can be used as semiconductor powders, and alumina, MgO, MgO・Al 2 O 3 (spinel) can be used as insulating powders. ), or Al 2 O 3 ·SiO 2 (mullite), ZrO 2 (zirconia), etc. can be used, although their thermal conductivity is somewhat low. FIG. 4 is an enlarged view of fine particles obtained by coating Ni alloy powder with Al as an example of metal powder, and FIG. 5 is an enlarged view of alumina powder as an example of insulating powder. FIG. 6 is a conceptual cross-sectional view of a resistor obtained by spraying a mixture of the metal powder shown in FIG. 4 and the insulating powder shown in FIG. 5. g Effects of the Invention Since the metal powder is coated with aluminum, the bonding force between the particles and the bonding force between the substrates is large. Since the metal powder and the semiconductor or insulator are transported separately, each powder can be transported under optimal conditions. You can also change the composition ratio at any time.
Resistors with different specific resistances can be easily made.
第１図は本発明に係る抵抗体を製造する方法を
実施するための装置の概念図、第２図は本発明に
係る方法で製造された抵抗体の上面図、第３図は
第２図のＡ−Ａ断面図、第４図は金属粉末の一例
の概念的断面図、第５図は絶縁体粉末の一例の概
念的断面図、第６図は本発明に係る方法で製造さ
れた抵抗体の概念的拡大図である。
１……プラズマトーチ、２……マスク、３……
基板、４……抵抗体。
FIG. 1 is a conceptual diagram of an apparatus for implementing the method for manufacturing a resistor according to the present invention, FIG. 2 is a top view of a resistor manufactured by the method according to the present invention, and FIG. 4 is a conceptual sectional view of an example of metal powder, FIG. 5 is a conceptual sectional view of an example of insulating powder, and FIG. 6 is a resistor manufactured by the method according to the present invention. It is a conceptual enlarged view of the body. 1... Plasma torch, 2... Mask, 3...
Board, 4...Resistor.
Claims (1)
されたマスクを基板の上に載置し、金属粉末と、
熱伝導率が高く電気伝導度の小さい半導体または
絶縁体の粉末の混合物からなる抵抗体材料をプラ
ズマトーチを用いてマスクの上から溶射すること
により、基板上に抵抗体を形成する抵抗体の製造
方法において、上記金属粉末がアルミニユームに
よつてコーテイングされた粉末であり、上記金属
粉末と上記半導体または絶縁体の粉末は、混合さ
れる前に別々にプラズマトーチの中に送り込ま
れ、プラズマトーチの中で混合されることを特徴
とする溶射技術を用いた抵抗体の製造方法。1. A mask with holes corresponding to the desired circuit pattern is placed on the substrate, and metal powder and
Manufacture of a resistor in which a resistor material consisting of a mixture of semiconductor or insulator powders with high thermal conductivity and low electrical conductivity is sprayed onto a mask using a plasma torch to form a resistor on a substrate. In the method, the metal powder is an aluminum-coated powder, and the metal powder and the semiconductor or insulator powder are separately fed into a plasma torch before being mixed, and the metal powder and the semiconductor or insulator powder are fed into a plasma torch separately before being mixed. A method for manufacturing a resistor using thermal spraying technology, characterized in that the resistor is mixed with
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63211636A JPH0259704A (en) | 1988-08-26 | 1988-08-26 | Light guiding type display device |
| EP88121434A EP0324147A3 (en) | 1988-01-11 | 1988-12-21 | Light guide type display apparatus |
| US07/294,082 US5053765A (en) | 1988-01-11 | 1989-01-06 | Light guide type display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63211636A JPH0259704A (en) | 1988-08-26 | 1988-08-26 | Light guiding type display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0259704A JPH0259704A (en) | 1990-02-28 |
| JPH0536923B2 true JPH0536923B2 (en) | 1993-06-01 |
Family
ID=16609062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63211636A Granted JPH0259704A (en) | 1988-01-11 | 1988-08-26 | Light guiding type display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0259704A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019004089A1 (en) * | 2017-06-28 | 2019-01-03 | 京セラ株式会社 | Heater |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2187259B1 (en) * | 2007-09-14 | 2014-05-14 | Panasonic Corporation | Projector |
-
1988
- 1988-08-26 JP JP63211636A patent/JPH0259704A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019004089A1 (en) * | 2017-06-28 | 2019-01-03 | 京セラ株式会社 | Heater |
| JPWO2019004089A1 (en) * | 2017-06-28 | 2020-01-09 | 京セラ株式会社 | heater |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0259704A (en) | 1990-02-28 |
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