JPH0534513A - Production of grating plate - Google Patents
Production of grating plateInfo
- Publication number
- JPH0534513A JPH0534513A JP3212837A JP21283791A JPH0534513A JP H0534513 A JPH0534513 A JP H0534513A JP 3212837 A JP3212837 A JP 3212837A JP 21283791 A JP21283791 A JP 21283791A JP H0534513 A JPH0534513 A JP H0534513A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- ion beam
- etching
- reactive gas
- grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は走査型電子顕微鏡や走査
型トンネル顕微鏡の倍率検定とか、それらによる像にお
ける長さの単位の決定或は水平方向と深さ方向の寸法の
同時正確な測定を行う場合の較正に用いる基準格子とし
て用い得るような精密な格子板の製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is for the magnification examination of scanning electron microscopes and scanning tunneling microscopes, the determination of the unit of length in an image, and the simultaneous accurate measurement of horizontal and depth dimensions. The present invention relates to a method for manufacturing a precise grid plate that can be used as a reference grid used for calibration when performing.
【０００２】回折格子の製法として機械的に溝を切って
行く方法とか、ホストレジストにより格子パターンを基
板上に焼付け、イオンビームエッチング法により格子溝
を形成する方法等が用いられている。上述したような走
査型電子顕微鏡の倍率検定とか水平方向の長さ測定のた
めだけなら上述した従来の回折格子でも利用できるが、
回折格子では格子断面が鋸歯状のエシェレット型格子が
多く用いられているため、試料面の凹凸の高さ方向（深
さ）の測定も同時に行う場合には回折格子は利用できな
い。As a method of manufacturing a diffraction grating, a method of mechanically cutting a groove, a method of baking a grating pattern on a substrate with a host resist, and a method of forming a grating groove by an ion beam etching method are used. The above-mentioned conventional diffraction grating can also be used if only for the magnification test of the scanning electron microscope as described above or for the length measurement in the horizontal direction.
Since an Echelette type grating having a sawtooth-shaped grating cross section is often used as the diffraction grating, the diffraction grating cannot be used when simultaneously measuring the height direction (depth) of the unevenness of the sample surface.
【０００３】走査型電子顕微鏡の像の倍率，水平方向，
深さ方向の測定に用いる基準格子としては溝ピッチと共
に溝の深さも精密に規定され、かつ溝底面が平滑である
格子が要求される。このような格子の製作には機械的な
方法より、イオンビームエッチングを用いる方法の方が
格子ピッチの精度とか溝断面の形を矩形或は台形に形成
する上で適している。Image magnification of the scanning electron microscope, horizontal direction,
As the reference grating used for the measurement in the depth direction, a groove whose groove pitch is precisely defined together with the groove pitch and whose groove bottom surface is smooth is required. For manufacturing such a grating, a method using ion beam etching is more suitable than a mechanical method for the accuracy of the grating pitch and for forming the groove cross section into a rectangular or trapezoidal shape.
【０００４】[0004]
【発明が解決しようとする課題】上述したような基準格
子をイオンビームエッチング法で形成する場合、溝断面
を矩形或は台形に形成することはイオンビームエッチン
グ法の性質として比較的容易に実現でき、溝深さの制御
はイオンビームエッチングの条件設定とエッチング時間
とで精密に制御できる。所が溝底の荒れと云う問題があ
った。本発明はイオンビームエッチングによる格子製造
でこの溝底の荒れを解消しようとするものである。When forming the above-mentioned reference grating by the ion beam etching method, it is relatively easy to realize that the groove cross section is rectangular or trapezoidal as a property of the ion beam etching method. The groove depth can be precisely controlled by setting ion beam etching conditions and etching time. There was a problem that the place was rough at the bottom of the groove. The present invention is intended to eliminate the roughness of the groove bottom by manufacturing a lattice by ion beam etching.
【０００５】[0005]
【課題を解決するための手段】基板上にホストレジスト
による格子パターンを形成し、反応性イオンビームエッ
チング法により格子溝を形成するに当たり、反応性ガス
にＡｒを混合してエッチグを行うようにした。Means for Solving the Problems When a lattice pattern is formed by a host resist on a substrate and a lattice groove is formed by a reactive ion beam etching method, Ar is mixed with a reactive gas for etching. .
【０００６】[0006]
【作用】ガラスとか石英のような基板に対し、反応性イ
オンビームエッチング（ＲＩＢＥ）を行う場合、反応性
ガスとしてはＣＨＦ3 のようなフッ素化合物が用いられ
る。所がこの反応性ガスから炭素が遊離して溝底に堆積
し、或は装置内の金属部分からのイオンスパッタリング
により金属層が溝底に沈着する。つまり、イオンビーム
エッチングと、炭素或は他の金属の蒸着とが同時進行の
形で行われ、エッチング速度が勝ることによって溝が形
成されて行く。しかしこのような蒸着は溝底全面均一で
なくて、これが溝底の荒れの原因と考えられ、反応性ガ
スにＡｒを混合しておくと、Ａｒイオンの炭素とか金属
に対するエッチング作用により溝底が清浄化されなが
ら、反応性イオンビームエッチングが進行して、溝底の
平滑化が実現されるものと考えられる。When a reactive ion beam etching (RIBE) is performed on a substrate such as glass or quartz, a fluorine compound such as CHF 3 is used as the reactive gas. In some cases, carbon is released from the reactive gas and deposited on the bottom of the groove, or a metal layer is deposited on the bottom of the groove by ion sputtering from a metal portion in the apparatus. That is, the ion beam etching and the vapor deposition of carbon or other metal are carried out simultaneously, and the groove is formed by increasing the etching rate. However, such deposition is not uniform over the entire groove bottom, and this is considered to be the cause of the roughness of the groove bottom. If Ar is mixed with the reactive gas, the groove bottom will be formed by the etching action of Ar ions on carbon or metal. It is considered that the reactive ion beam etching proceeds while being cleaned, and the groove bottom is smoothed.
【０００７】[0007]
【実施例】基板として合成石英ガラス板を用い、表面を
光学研磨した上に、ノボラック系ポジ型ホトレジストを
スピンコートにより３０００オングストロームの層厚さ
にコートし、フレッシュエアオープン中で９０°Ｃ３０
分間プレベーキングし、Ｈｅ−Ｃｄレーザ光（波長４４
１６オングストローム）の２光束干渉により、基板面に
格子パターンを焼付け、現像を行って、ホトレジストの
断面が半波正弦状のホトレジストパターンを形成する。
この実施例ではこの格子パターンは１０００本／ｍｍと
した。ホストレジストパターンの形成過程では露光量或
は現像時間を調節してホトレジストのマスク部分と基板
露出部の幅の比率を色々に変えることができる。この実
施例ではこの幅の比は１：１とした。この後、基板をエ
ッチング装置にセットし、反応性ガスとしてＣＨＦ3 を
用い、Ａｒを混合して、混合比をＣＨＦ3 ：Ａｒ＝７：
２として反応性イオンビームエッチングを行った。最後
にバレルタイププラズマエッチングシステムでマスクと
して用いたホトレジストを酸素プラズマで灰化除去し
て、所望の格子を得た。溝の深さはＲＩＢＥの時間によ
って調節でき、この実施例では５０００オングストロー
ムの深の溝を得ることができた。EXAMPLE A synthetic quartz glass plate was used as a substrate, the surface was optically polished, and a novolac-based positive photoresist was spin-coated to a layer thickness of 3000 angstroms.
Pre-baking for a minute, and He-Cd laser light (wavelength 44
By a two-beam interference of 16 angstroms), a grating pattern is printed on the substrate surface and developed to form a photoresist pattern having a half-wave sinusoidal cross section.
In this embodiment, the lattice pattern is 1000 lines / mm. In the process of forming the host resist pattern, the exposure amount or the development time can be adjusted to change various ratios of the width of the mask portion of the photoresist to the exposed portion of the substrate. In this embodiment, the width ratio is 1: 1. After that, the substrate is set in an etching apparatus, CHF 3 is used as a reactive gas, Ar is mixed, and the mixing ratio is CHF 3 : Ar = 7 :.
As No. 2, reactive ion beam etching was performed. Finally, the photoresist used as the mask in the barrel type plasma etching system was ashed and removed by oxygen plasma to obtain a desired lattice. The depth of the groove can be adjusted by the time of RIBE, and a groove having a depth of 5000 angstrom could be obtained in this example.
【０００８】反応性ガスにＡｒを混合すると、基板とホ
トレジストとのエッチングレート比が反応性ガス単独の
場合よりも大きくなる。ＣＨＦ3 単独の場合、石英とホ
トレジストのエッチングレート比は７：１、つまり、石
英が７だけエッチングされる間にホトレジストは１だけ
しかエッチングされない。ＣＨＦ3 ：Ａｒの混合比７：
２としたとき、このエッチングレート比は１０：１にな
った。このためこれと溝底部の荒れが著しく改善される
ことで、ＣＨＦ3 単独の場合より深い溝を形成すること
が可能となり、上述したように５０００オングストロー
ムの深さの溝が得られた。またエッチングレートが大と
なることにより、溝側面の傾斜がより垂直に近くなって
来る。反応性ガスとＡｒの混合比は基板によって異な
り、上の例では基板を石英として混合比７：２とした
が、この比は一例であって、予め実験により好ましい比
率を決めておくのがよい。When Ar is mixed with the reactive gas, the etching rate ratio between the substrate and the photoresist becomes larger than that when the reactive gas is used alone. In the case of CHF 3 alone, the etching rate ratio between quartz and photoresist is 7: 1, that is, only 1 photoresist is etched while 7 quartz is etched. CHF 3 : Ar mixing ratio 7:
When set to 2, this etching rate ratio became 10: 1. Therefore, this and the roughness of the bottom of the groove are remarkably improved, so that it becomes possible to form a deeper groove than in the case of using CHF 3 alone, and as described above, a groove having a depth of 5000 Å was obtained. Further, as the etching rate increases, the inclination of the groove side surface becomes closer to vertical. The mixing ratio of the reactive gas and Ar differs depending on the substrate. In the above example, the substrate is made of quartz and the mixing ratio is 7: 2. However, this ratio is an example, and it is preferable to determine a preferable ratio in advance by experiment. .
【０００９】[0009]
【発明の効果】本発明によれば、格子板の製作にＲＩＢ
Ｅを用いるに当たり、反応性ガスにＡｒを混合すること
により、荒れのない溝底を有する格子が得られると共
に、基板とホトレジストとのエッチングレートの向上に
より、反応性ガス単独で用いる場合よりも深い溝を得る
ことが可能となり、また溝側面の傾斜も垂直に近くする
ことが可能となる。According to the present invention, the RIB is used for manufacturing the lattice plate.
When E is used, by mixing Ar with a reactive gas, a lattice having a groove bottom without roughness can be obtained, and since the etching rate of the substrate and the photoresist is improved, it is deeper than the case of using the reactive gas alone. It is possible to obtain a groove, and the inclination of the groove side surface can be made nearly vertical.
図面なし。 No drawing.
Claims (1)
を形成し、反応性イオンビームエッチング法により格子
溝を形成する場合において、反応性ガスにＡｒを混合し
てイオンビームエッチングを行うことを特徴とする格子
板の製造方法。Claim: What is claimed is: 1. When a lattice pattern is formed on a substrate surface by a photoresist and a lattice groove is formed by a reactive ion beam etching method, Ar is mixed with a reactive gas to perform ion beam etching. A method for manufacturing a lattice plate, which is characterized by being performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3212837A JPH0534513A (en) | 1991-07-29 | 1991-07-29 | Production of grating plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3212837A JPH0534513A (en) | 1991-07-29 | 1991-07-29 | Production of grating plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0534513A true JPH0534513A (en) | 1993-02-12 |
Family
ID=16629172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3212837A Pending JPH0534513A (en) | 1991-07-29 | 1991-07-29 | Production of grating plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0534513A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634806A (en) * | 1992-07-16 | 1994-02-10 | Shimadzu Corp | Manufacture of dammann grating |
| JPH07176585A (en) * | 1993-04-30 | 1995-07-14 | Sumitomo Sitix Corp | Standard calibration sample for measurment accuracy and its manufacture |
| EP0774489A1 (en) | 1995-11-17 | 1997-05-21 | Japan Polychem Corporation | Thermoplastic resin composition |
| US5850819A (en) * | 1994-12-09 | 1998-12-22 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Fuel evaporative emission treatment system |
| JP2006210171A (en) * | 2005-01-28 | 2006-08-10 | Jeol Ltd | Scanning width calibration method of charged particle beam, microscopic device using charged particle beam, and sample for charged particle beam calibration |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592325A (en) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | Etching method for insulation film |
| JPS59167020A (en) * | 1983-03-11 | 1984-09-20 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01161302A (en) * | 1987-12-18 | 1989-06-26 | Shimadzu Corp | Manufacture of holographic rating |
| JPH01308028A (en) * | 1988-06-07 | 1989-12-12 | Fujitsu Ltd | Formation of copper or copper alloy electrode wiring |
| JPH02244002A (en) * | 1989-03-17 | 1990-09-28 | Sekinosu Kk | Formation of optical diffraction grating core for injection molding |
| JPH03253802A (en) * | 1990-03-02 | 1991-11-12 | Hikari Keisoku Gijutsu Kaihatsu Kk | Fine working method |
-
1991
- 1991-07-29 JP JP3212837A patent/JPH0534513A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592325A (en) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | Etching method for insulation film |
| JPS59167020A (en) * | 1983-03-11 | 1984-09-20 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01161302A (en) * | 1987-12-18 | 1989-06-26 | Shimadzu Corp | Manufacture of holographic rating |
| JPH01308028A (en) * | 1988-06-07 | 1989-12-12 | Fujitsu Ltd | Formation of copper or copper alloy electrode wiring |
| JPH02244002A (en) * | 1989-03-17 | 1990-09-28 | Sekinosu Kk | Formation of optical diffraction grating core for injection molding |
| JPH03253802A (en) * | 1990-03-02 | 1991-11-12 | Hikari Keisoku Gijutsu Kaihatsu Kk | Fine working method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634806A (en) * | 1992-07-16 | 1994-02-10 | Shimadzu Corp | Manufacture of dammann grating |
| JPH07176585A (en) * | 1993-04-30 | 1995-07-14 | Sumitomo Sitix Corp | Standard calibration sample for measurment accuracy and its manufacture |
| US5850819A (en) * | 1994-12-09 | 1998-12-22 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Fuel evaporative emission treatment system |
| EP0774489A1 (en) | 1995-11-17 | 1997-05-21 | Japan Polychem Corporation | Thermoplastic resin composition |
| JP2006210171A (en) * | 2005-01-28 | 2006-08-10 | Jeol Ltd | Scanning width calibration method of charged particle beam, microscopic device using charged particle beam, and sample for charged particle beam calibration |
| JP4594116B2 (en) * | 2005-01-28 | 2010-12-08 | 日本電子株式会社 | Charged beam scanning width calibration method, microscope using charged particle beam, and charged particle beam calibration sample |
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