JPH05343375A - Polisher - Google Patents

Polisher

Info

Publication number
JPH05343375A
JPH05343375A JP4145207A JP14520792A JPH05343375A JP H05343375 A JPH05343375 A JP H05343375A JP 4145207 A JP4145207 A JP 4145207A JP 14520792 A JP14520792 A JP 14520792A JP H05343375 A JPH05343375 A JP H05343375A
Authority
JP
Japan
Prior art keywords
polishing
substrate
abrasive
polished
surface plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4145207A
Other languages
Japanese (ja)
Inventor
Atsushi Shigeta
厚 重田
Masako Kodera
雅子 小寺
Hiroyuki Yano
博之 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4145207A priority Critical patent/JPH05343375A/en
Publication of JPH05343375A publication Critical patent/JPH05343375A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve polishing speed to perform precise polishing by providing a plurality of abrasive supply ports opening on a surface of a disk. CONSTITUTION:A substrate 22 to be polished is held by a holding jig 21 and placed oppositely to a disk 23 having a polishing surface. Abrasive 24 is diffused through an abrasive supply path 26 into an abrasive diffusion chamber 27 and passes through abrasive supply ports 25 opening on the surface of the disk 23 to be directly supplied between the substrate 22 and the disk 23. While load is applied to the substrate 22 through the holding jig 21, either or both the substrate 22 and the disk 23 are rotated to slide, whereby the substrate 22 is polished. Thus an increase in polishing speed can be observed with respect to an increase in the number of rotations in a high rotation region where the polishing speed has been conventionally at a certain value or lower while no drop in flatness of the polished surface is observed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は研磨装置に関し、特に
被加工物と研磨面を持つ定盤との間に研磨剤を供給する
方式の研磨装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus, and more particularly to a polishing apparatus of a type which supplies an abrasive between a work piece and a surface plate having a polishing surface.

【0002】[0002]

【従来の技術】一般に半導体ウェハ等の基板状の物体を
研磨する場合は、図5に示すように基板42を研磨面を
持つ定盤(以下単に定盤と称す)43に対置させ、基板
42と定盤43との間に研磨剤44を供給しながら、定
盤43に対置する基板42に荷重を加え、基板42と定
盤43の一方または両方を摺動させる如く回転させるこ
とにより研磨する方法が行われている。この場合、研磨
剤44は基板42の近傍の定盤43上にノズル45を用
いて供給する方法が多くとられている。
2. Description of the Related Art Generally, when polishing a substrate-shaped object such as a semiconductor wafer, as shown in FIG. 5, the substrate 42 is placed in opposition to a surface plate (hereinafter simply referred to as a surface plate) 43 having a polishing surface. While supplying the polishing agent 44 between the surface plate 43 and the surface plate 43, a load is applied to the substrate 42 opposed to the surface plate 43, and one or both of the substrate 42 and the surface plate 43 are rotated so as to slide to perform polishing. The way is done. In this case, the polishing agent 44 is often supplied onto the surface plate 43 near the substrate 42 using a nozzle 45.

【0003】基板42を研磨するためには、基板42と
定盤43の間に研磨剤44が供給されることが最低限必
要であり、さらに研磨速度を上げて精度良く研磨を行う
ためには、基板42と定盤43の間に研磨剤44が充分
かつ均一に供給されることが必要となる。しかしながら
この従来の方法では、研磨時の荷重の増加に伴い研磨剤
44が基板42と定盤43の間に入り込みにくくなり、
さらに定盤43の回転数を上げた場合には、遠心力によ
り研磨剤44が定盤43上で保持されにくくなるため、
研磨剤44の充分かつ均一な供給が行われなくなる。こ
の間の状況を次に図6および図7を参照して説明する。
In order to polish the substrate 42, it is necessary to supply the polishing agent 44 between the substrate 42 and the surface plate 43 at least, and in order to increase the polishing rate and perform the polishing accurately. It is necessary that the polishing agent 44 be sufficiently and uniformly supplied between the substrate 42 and the surface plate 43. However, in this conventional method, the abrasive 44 is less likely to enter between the substrate 42 and the surface plate 43 as the load during polishing increases,
When the number of rotations of the surface plate 43 is further increased, the abrasive 44 is less likely to be held on the surface plate 43 due to centrifugal force.
Sufficient and uniform supply of the abrasive 44 will not be performed. The situation during this period will be described below with reference to FIGS. 6 and 7.

【0004】図6は回転数と研磨速度および被研磨面の
平坦性の関係を表した一例で、回転数200rpm付近
で研磨速度はほぼ一定になり、300rpm以上に回転
数が上がると研磨速度は逆に減少する。研磨後の基板4
2の被研磨面の平坦性についても、回転数300rpm
以上で著しく悪化する。なお平坦性については、ここで
は図8に示すように、被研磨基板51の面内の最大研磨
量53(Pmax)、最小研磨量54(Pmin)を用
いて、(Pmax−Pmin)/(Pmax+Pmi
n)×100%と定義する。なお、図8において52は
被研磨基板51の研磨前の基準面を表す。
FIG. 6 shows an example of the relationship between the rotation speed, the polishing speed and the flatness of the surface to be polished. On the contrary, it decreases. Substrate 4 after polishing
Regarding the flatness of the surface to be polished of No. 2, the rotation speed is 300 rpm.
With the above, it becomes significantly worse. Regarding the flatness, here, as shown in FIG. 8, using the maximum polishing amount 53 (Pmax) and the minimum polishing amount 54 (Pmin) within the surface of the substrate 51 to be polished, (Pmax-Pmin) / (Pmax + Pmi)
n) × 100%. In FIG. 8, reference numeral 52 represents a reference surface of the substrate 51 to be polished before polishing.

【0005】図7は荷重と研磨速度および被研磨面の平
坦性の関係を示した一例で、研磨装置の特性により適切
な荷重領域は異なるものの、一般に荷重を大きくすると
研磨速度は大きくなるが、この例では荷重500g/cm2
以上で定盤43と基板42間への研磨剤44の供給、排
出が円滑に行われなくなり、研磨速度は低下する。被研
磨面の平坦性についても、この例では300g/cm2 付近
で最も良好であるが、400g/cm2 を超えると次第に悪
化する。
FIG. 7 shows an example of the relationship between the load, the polishing rate, and the flatness of the surface to be polished. Although the appropriate load region varies depending on the characteristics of the polishing apparatus, generally, the polishing rate increases as the load increases, but In this example, the load is 500g / cm 2
As described above, the supply and discharge of the polishing agent 44 between the surface plate 43 and the substrate 42 are not smoothly performed, and the polishing rate is reduced. The flatness of the surface to be polished is also 300 g / cm 2 in this example. The best in the vicinity, but 400g / cm 2 When it exceeds, it gets worse.

【0006】[0006]

【発明が解決しようとする課題】上記のように、従来の
研磨装置では被研磨基板と定盤の間に研磨剤を充分かつ
均一に供給することができず、従って研磨速度を上げ精
度よく研磨を行うことができなかった。そこで本発明で
は被研磨基板と定盤の間に研磨剤を充分かつ均一に供給
することができる研磨装置を提供しようとするものであ
る。
As described above, in the conventional polishing apparatus, the polishing agent cannot be sufficiently and uniformly supplied between the substrate to be polished and the surface plate. Therefore, the polishing rate is increased and the polishing is performed accurately. Could not be done. Therefore, the present invention is intended to provide a polishing apparatus capable of sufficiently and uniformly supplying an abrasive between a substrate to be polished and a surface plate.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に本発明では、表面に研磨面を持つ定盤上に保持具によ
り保持された被研磨物を対置し、前記定盤と前記被研磨
物の間に研磨剤を供給し、前記被研磨物に荷重を加え、
前記被研磨物と前記定盤の一方もしくは両方を摺動する
ごとく反復移動または回転させることにより、前記被研
磨物表面を研磨する研磨装置において、前記定盤の非研
磨面より導入され、かつ前記定盤内部に設けられた研磨
剤導入路と、この研磨剤導入路に接続して前記定盤内部
に設けられ、かつ前記研磨剤を拡散させる研磨剤拡散室
と、この研磨剤拡散室と前記研磨面を連通させる研磨剤
供給口とを具備する研磨装置を提供する。
In order to achieve the above object, in the present invention, an object to be polished held by a holder is placed on a surface plate having a polishing surface on its surface, and the surface plate and the object to be polished are opposed to each other. Supplying an abrasive between the objects, applying a load to the object to be polished,
In the polishing apparatus for polishing the surface of the object to be polished by repeatedly moving or rotating one or both of the object to be polished and the surface plate, the surface is introduced from a non-polished surface of the surface plate, and An abrasive introduction path provided inside the surface plate, an abrasive diffusion chamber connected to the abrasive introduction path and provided inside the surface plate for diffusing the abrasive, the abrasive diffusion chamber and the Provided is a polishing device having a polishing agent supply port for communicating a polishing surface.

【0008】[0008]

【作用】本発明では、定盤の表面に開孔した複数の研磨
剤供給口を設けたので、研磨剤を常に均一に供給するこ
とが可能になった。
In the present invention, since a plurality of abrasive supply ports are provided on the surface of the surface plate, it is possible to always supply the abrasive uniformly.

【0009】[0009]

【実施例】本発明の実施例を図1内至図2を参照して説
明する。図1は本発明の第1実施例の断面図であり、研
磨される基板22は保持具21により保持され、研磨面
を持つ定盤23に対置される。研磨剤24は研磨剤供給
路26を通り研磨剤拡散室27で拡散され、前記定盤2
3の表面に開孔した研磨剤供給口25を通って、前記基
板22と前記定盤23の間に直接供給される。そして前
記保持具21を通じて前記基板22に荷重が加えられた
状態で、前記基板22と前記定盤23の一方または両方
を摺動させる如く回転させることにより前記基板22が
研磨される。次に本発明の第2実施例を、図2を参照し
て説明する。図2において研磨される基板33は保持具
31上に保持されており、前記基板より小さい定盤33
が上側に対置している。研磨剤34は研磨剤供給路36
を通って研磨剤拡散室37で拡散され、前記定盤33の
表面に開孔した研磨剤供給口35より前記基板32と前
記定盤33の間に供給される。前記定盤33を通じて前
記基板32に荷重をかけつつ、前記基板32と前記定盤
33の一方または両方を摺動させる如く回転させること
により前記基板33が研磨される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a first embodiment of the present invention, in which a substrate 22 to be polished is held by a holder 21 and placed on a surface plate 23 having a polishing surface. The abrasive 24 passes through the abrasive supply path 26 and is diffused in the abrasive diffusion chamber 27.
It is directly supplied between the substrate 22 and the surface plate 23 through an abrasive supply port 25 having a hole formed on the surface of 3. Then, the substrate 22 is polished by rotating one or both of the substrate 22 and the surface plate 23 while sliding a load on the substrate 22 through the holder 21. Next, a second embodiment of the present invention will be described with reference to FIG. The substrate 33 to be polished in FIG. 2 is held on a holder 31 and has a surface plate 33 smaller than the substrate.
Are opposite to each other. The abrasive 34 is an abrasive supply path 36.
It is diffused through the polishing agent in the polishing agent diffusion chamber 37, and is supplied between the substrate 32 and the polishing table 33 from the polishing agent supply port 35 formed in the surface of the polishing table 33. The substrate 33 is polished by rotating one or both of the substrate 32 and the surface plate 33 while sliding a load on the substrate 32 through the surface plate 33.

【0010】図1および図2に示すような構成にするこ
とにより、前記研磨剤24または34を前記基板22ま
たは32と、前記定盤23または33との間に、直接か
つ均一に供給し続けることができるため、研磨時の荷重
および回転数の増加による研磨剤の不均一供給が解消さ
れる。このことが研磨速度並びに被研磨面の平坦性に及
ぼす効果に付いて、図3および図4を参照して説明す
る。
With the structure shown in FIGS. 1 and 2, the abrasive 24 or 34 is continuously and directly supplied between the substrate 22 or 32 and the surface plate 23 or 33. Therefore, uneven supply of the polishing agent due to an increase in the load and the number of rotations during polishing is eliminated. The effect of this on the polishing rate and the flatness of the surface to be polished will be described with reference to FIGS. 3 and 4.

【0011】図3は本実施例における回転数と研磨速度
および被研磨面の平坦性の関係を示した一例であり、従
来の方法では研磨速度が減少方向にあった300rpm
以上でも研磨速度の増加が見られる。さらに研磨後の被
研磨面の平坦性についても、回転数の増加にによる著し
い低下は見られず、300rpm以上でもそれ以下の回
転数領域と同等の10数%の良好な結果が得られる。ま
た荷重の増加にたいしても図4に示すように、荷重の増
加に見合った研磨速度の増加が見られると共に高荷重領
域における平坦性の低下も抑えられる。
FIG. 3 is an example showing the relationship between the number of revolutions, the polishing rate, and the flatness of the surface to be polished in this embodiment. The polishing rate was decreased in the conventional method at 300 rpm.
Even with the above, the polishing rate is increased. Further, the flatness of the surface to be polished after polishing is not significantly decreased due to the increase of the rotation speed, and a good result of 10 several percent, which is equivalent to the rotation speed region below 300 rpm, can be obtained. Further, as shown in FIG. 4, even when the load is increased, the polishing rate corresponding to the increase in the load is increased and the flatness in the high load region is prevented from being lowered.

【0012】なお図1および図2における研磨剤供給口
25、35は孔または溝であり、その素材、大きさ、位
置、形状を特定せず、その本数についても何本であって
も構わない。研磨剤供給路26、36についても、その
素材、大きさ、位置、形状を特定せず、その本数につい
ても何本であっても構わない。
It should be noted that the abrasive supply ports 25 and 35 in FIGS. 1 and 2 are holes or grooves, and their material, size, position and shape are not specified, and the number thereof may be any number. .. The material, size, position and shape of the abrasive supply paths 26 and 36 are not specified, and the number thereof may be any number.

【0013】また本実施例では、被研磨基板と定盤の一
方もしくは両方が回転する例を示したが、被研磨基板と
定盤の一方もしくは両方を横方向に摺動する如く反復移
動させてもよい。
In this embodiment, one or both of the substrate to be polished and the surface plate are rotated. However, one or both of the substrate to be polished and the surface plate are repeatedly moved so as to slide laterally. Good.

【0014】[0014]

【発明の効果】以上詳述したように本発明の方法によれ
ば、研磨剤供給口を通じて被研磨基板と研磨面を持つ定
盤との間に直接研磨剤を供給することができる。そのた
め回転数の増加に対しては、従来研磨速度が一定値以下
となっていた高回転領域において研磨速度の増加が見ら
れるとともに、研磨後の被研磨面の平坦性についても回
転数の増加による著しい低下は見られず、低回転数領域
と同等の良好な結果を得ることができる。また荷重の増
加に対しても、従来の方法で研磨速度と平坦性の低下が
見られていた領域で研磨速度が増加し、平坦性の低下も
抑えることができる。
As described in detail above, according to the method of the present invention, the polishing agent can be directly supplied between the substrate to be polished and the surface plate having the polishing surface through the polishing agent supply port. Therefore, as the rotation speed increases, the polishing speed increases in the high rotation region where the conventional polishing speed is less than a certain value, and the flatness of the surface to be polished after polishing also depends on the rotation speed. No significant decrease is seen, and good results equivalent to those in the low rotational speed region can be obtained. Further, even when the load is increased, the polishing rate is increased in a region where the polishing rate and the flatness are reduced by the conventional method, and the reduction in the flatness can be suppressed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の研磨装置の第1実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of a polishing apparatus of the present invention.

【図2】本発明の研磨装置の第2実施例を示す断面図。FIG. 2 is a sectional view showing a second embodiment of the polishing apparatus of the present invention.

【図3】本発明の研磨装置における回転数と研磨速度並
びに被研磨面の平坦性の関係を示す図。
FIG. 3 is a diagram showing the relationship between the number of revolutions, the polishing speed, and the flatness of the surface to be polished in the polishing apparatus of the present invention.

【図4】本発明の研磨装置における荷重と研磨速度並び
に被研磨面の平坦性の関係を示す図。
FIG. 4 is a diagram showing a relationship between a load, a polishing rate, and flatness of a surface to be polished in the polishing apparatus of the present invention.

【図5】従来技術による研磨装置の断面図。FIG. 5 is a cross-sectional view of a polishing apparatus according to the related art.

【図6】従来技術の研磨装置における回転数と研磨速度
並びに被研磨面の平坦性の関係を示す図。
FIG. 6 is a diagram showing the relationship between the number of revolutions, the polishing speed, and the flatness of the surface to be polished in the conventional polishing apparatus.

【図7】従来技術の研磨装置における荷重と研磨速度並
びに被研磨面の平坦性の関係を示す図。
FIG. 7 is a diagram showing a relationship between a load, a polishing rate, and flatness of a surface to be polished in a conventional polishing apparatus.

【図8】最大研磨量と最小研磨量の定義の説明図。FIG. 8 is an explanatory diagram of definitions of a maximum polishing amount and a minimum polishing amount.

【符号の説明】[Explanation of symbols]

21 … 保持具 22 … 被研磨基板 23 … 定盤 24 … 研磨剤 25 … 研磨剤供給口 26 … 研磨剤供給路 27 … 研磨剤拡散室 21 ... Holding tool 22 ... Substrate to be polished 23 ... Surface plate 24 ... Abrasive 25 ... Abrasive supply port 26 ... Abrasive supply path 27 ... Abrasive diffusion chamber

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 表面に研磨面を持つ定盤上に保持具によ
り保持された被研磨物を対置し、前記定盤と前記被研磨
物の間に研磨剤を供給し、前記被研磨物に荷重を加え、
前記被研磨物と前記定盤の一方もしくは両方を摺動する
ごとく反復移動または回転させることにより、前記被加
工物表面を研磨する研磨装置において、前記定盤の非研
磨面より導入され、かつ前記定盤内部に設けられた研磨
剤導入路と、この研磨剤導入路に接続して前記定盤内部
に設けられ、かつ前記研磨剤を拡散させる研磨剤拡散室
と、この研磨剤拡散室と前記研磨面を連通させる研磨剤
供給口とを具備することを特徴とする研磨装置。
1. An object to be polished held by a holder is placed on a surface plate having a polishing surface on its surface, and an abrasive is supplied between the surface plate and the object to be polished, to the object to be polished. Load,
In a polishing apparatus for polishing the surface of the workpiece by repeatedly moving or rotating one or both of the object to be polished and the surface plate, the surface is introduced from a non-polishing surface of the surface plate, and An abrasive introduction path provided inside the surface plate, an abrasive diffusion chamber connected to the abrasive introduction path and provided inside the surface plate for diffusing the abrasive, the abrasive diffusion chamber and the A polishing apparatus comprising: a polishing agent supply port for communicating a polishing surface.
JP4145207A 1992-06-05 1992-06-05 Polisher Pending JPH05343375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4145207A JPH05343375A (en) 1992-06-05 1992-06-05 Polisher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4145207A JPH05343375A (en) 1992-06-05 1992-06-05 Polisher

Publications (1)

Publication Number Publication Date
JPH05343375A true JPH05343375A (en) 1993-12-24

Family

ID=15379873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4145207A Pending JPH05343375A (en) 1992-06-05 1992-06-05 Polisher

Country Status (1)

Country Link
JP (1) JPH05343375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863770B2 (en) 2001-03-26 2005-03-08 Samsung Electronics Co., Ltd. Method and apparatus for polishing a substrate while washing a polishing pad of the apparatus with at least one free-flowing vertical stream of liquid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863770B2 (en) 2001-03-26 2005-03-08 Samsung Electronics Co., Ltd. Method and apparatus for polishing a substrate while washing a polishing pad of the apparatus with at least one free-flowing vertical stream of liquid

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