JPH05343297A - Method and apparatus for exposing - Google Patents

Abstract

PURPOSE:To eliminate an irregularity in a partial size of a pattern generated when a semiconductor integrated circuit pattern is exposed by reducing an irregularity in illuminance of a light to be emitted to a reticle and a wafer. CONSTITUTION:An exposure apparatus comprises a light source 1, an elliptical mirror 3 for reflecting a light emitted from the source 1, a condenser lens 6 and a projecting lens 9 for passing a light emitted from the source 1 and the mirror 3, a light source rotating unit 2 as a driver, an elliptical mirror rotating unit 4, a condenser lens rotting unit 7 and a projecting lens rotating unit 10. When a semiconductor integrated circuit pattern is exposed on a wafer 11, the source 1 is rotated around a main optical axis 12 as its center by the unit 2, the mirror 3 is rotated around the axis 12 as its center by the unit 4, the lens 6 is rotated around the axis 12 as its center by the unit 7, and the lens 9 is rotated around the axis 12 as its center by the unit 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method and an exposure apparatus for exposing a predetermined semiconductor integrated circuit pattern on a wafer.

[0002]

2. Description of the Related Art Conventionally, an exposure method uses a high-pressure mercury lamp as a light source, and light emitted from this light source (G line, wavelength 436).
[Nm]) is condensed by an elliptical mirror, and a condenser lens,
The semiconductor integrated circuit pattern formed on the reticle is exposed on the wafer by irradiating the wafer after passing through the reticle and the projection lens. Further, in the conventional exposure apparatus used for this exposure, the light source, the elliptical mirror, the condenser lens and the projection lens are fixed.

[0003]

However, in such a conventional exposure method, the unevenness of the light emitted from the light source, the partial unevenness of the reflectance of the elliptical mirror, the partial unevenness of the condenser lens and the projection lens. Due to such non-uniformity of the transmittance, unevenness of the illuminance of the light irradiated on the reticle and the wafer occurs, and there is a problem that the partial size of the pattern becomes non-uniform when the semiconductor integrated circuit pattern is exposed.

In view of the above problems, an object of the present invention is to reduce the unevenness of the illuminance of the light irradiated onto the reticle and the wafer, and to prevent the unevenness of the partial size of the pattern generated during the pattern exposure of the semiconductor integrated circuit. An exposure method and an exposure apparatus that can be eliminated.

[0005]

An exposure method according to a first aspect is characterized in that the exposure is performed while rotating the light source, the reflector and the lens about the main optical axis of the light source. Claim 2
The exposure apparatus described above includes a light source, a reflector that reflects the light emitted from the light source, a lens that transmits the light emitted from the light source and the reflector, and the light source, the reflector, and the lens with the main optical axis of the light source as the center. And a drive unit for rotating the same.

[0006]

According to the structure of the present invention, the light source,
By rotating the reflection plate that reflects the light emitted from the light source and the lens that transmits the light emitted from the light source and the reflection plate about the main optical axis of the light source, unevenness and reflection of the light emitted from the light source can be achieved. The unevenness of light caused by the partial unevenness of the reflectance of the plate and the partial unevenness of the transmittance of the lens can be averaged in the circumferential direction.

[0007]

1 is a conceptual diagram for explaining an exposure method according to an embodiment of the present invention. In FIG. 1, 1 is a light source, 2
Is a light source rotating device that rotates the light source 1 about the main optical axis 12, 3 is an elliptical mirror that serves as a reflector, 4 is an elliptic mirror rotating device that rotates the elliptical mirror 3 about the main optical axis 12, and 5 is A shutter, 6 is a condenser lens, 7 is a condenser lens rotating device for rotating the condenser lens 6 about the main optical axis 12, 8 is a reticle, 9 is a projection lens, and 10 is a projection lens 9 about the main optical axis 12. Is a projection lens rotating device for rotating the wafer, 11 is a wafer, and 13 is an irradiation light optical path.

As shown in FIG. 1, the exposure apparatus includes a light source 1
And an elliptical mirror 3 that reflects the light emitted from the light source 1.
A condenser lens 6 and a projection lens 9 which transmit the light emitted from the light source 1 and the elliptical mirror 3, and a light source 1, an ellipsoidal mirror 3, a condenser lens 6 and a projection lens 9, respectively, which are connected to the main optical axis 12 of the light source 1. It has a light source rotation device 2, an elliptical mirror rotation device 4, a condenser lens rotation device 7, and a projection lens rotation device 10 which are driving parts for rotating the lens center.

A shutter 5 is provided on the light source 1 and the condenser lens 6. In front of the condenser lens 6, that is, between the condenser lens 6 and the projection lens 9,
A reticle 8 on which a semiconductor integrated circuit pattern (not shown) is formed is arranged. In front of the projection lens 9,
A wafer 11 to be exposed with a semiconductor integrated circuit pattern is arranged.

During exposure of the semiconductor integrated circuit pattern on the wafer 11, the light source rotating device 2 rotates the light source 1 about the main optical axis 12, and the elliptical mirror rotating device 4 rotates the main optical axis 12 about the main optical axis 12. The mirror 3 is rotated, the condenser lens rotating device 7 rotates the condenser lens 6 about the main optical axis 12, and the projection lens rotating device 10 rotates.
Thus, the projection lens 9 is rotated around the main optical axis 12.

FIG. 1 shows a method of exposing a semiconductor integrated circuit pattern onto a wafer 11 using the exposure apparatus having the above-described structure.
It will be specifically described with reference to. When exposing, the exposure time is first set. Here, the exposure time was set to 0.5 seconds. Next, using the light source rotating device 2, 500 per minute
The light source 1 is rotated about the main optical axis 12 at a speed of 0 rotation. Similarly, the elliptic mirror 3 is rotated using the elliptical mirror rotation device 4, the condenser lens 6 is rotated using the condenser lens rotation device 7, and the projection lens 9 is rotated using the projection lens rotation device 10 at a speed of 5000 rpm. The main optical axis 12 is rotated. As a result, the unevenness of the light emitted from the light emitted from the light source 1, the uneven reflectance of the elliptical mirror 3 partially, and the uneven transmittance of the condenser lens 6 and the projection lens 10 is circled. Average in the direction. Then, with the light source 1, the elliptical mirror 3, the condenser lens 6, and the projection lens 9 rotated about the main optical axis 12 at a speed of 5000 rpm, the shutter 5 is opened for 0.5 seconds. The semiconductor integrated circuit pattern on the reticle 8 is exposed on the wafer 11.

As described above, according to the embodiment, the light source 1, the elliptical mirror 3, the condenser lens 6 and the projection lens 10 are provided.
Is rotated about the main optical axis 12 at a speed of 5000 revolutions per minute, so that the light emitted from the light source 1 is non-uniform,
The unevenness of light caused by the partial unevenness of the reflectance of the elliptical mirror 3 and the partial unevenness of the transmittance of the condenser lens 6 and the projection lens 10 can be averaged in the circumferential direction. As a result, the unevenness of the illuminance of the light irradiated onto the reticle 8 and the wafer 11 is reduced, and the partial nonuniformity of the dimensions that occurs during the semiconductor integrated circuit pattern exposure is eliminated.

In the embodiment, the light source 1, the elliptical mirror 3, the condenser lens 6 and the projection lens 10 are replaced by
The main optical axis 12 was rotated at a speed of 5000 revolutions per minute, but the rotation speed can be arbitrarily set within a range in which partial dimensional nonuniformity does not occur during exposure of the semiconductor integrated circuit pattern. .. The light source 1, the elliptical mirror 3, the condenser lens 6, and the projection lens 10 may rotate at different speeds.

[0014]

According to the exposure method and the exposure apparatus of the present invention, a light source, a reflector for reflecting the light emitted from the light source, and a lens for transmitting the light emitted from the reflector at the time of exposure are used as the light source. By rotating around the main optical axis of the, the unevenness of the light emitted from the unevenness of the light emitted from the light source, the partial reflectance of the reflector and the uneven transmittance of the lens are circled. It can be averaged in the circumferential direction.

As a result, the unevenness of the illuminance of the light irradiated on the reticle and the wafer arranged in front of the lens is reduced, and the unevenness of the partial size of the pattern generated during the exposure of the semiconductor integrated circuit pattern is eliminated. You can As a result, the characteristics of the semiconductor integrated circuit formed on the wafer can be stabilized, the reliability can be improved, and the yield can be improved.

[Brief description of drawings]

FIG. 1 is a conceptual diagram for explaining an exposure method according to an embodiment of the present invention.

[Explanation of symbols]

 1 Light Source 2 Light Source Rotating Device (Drive Unit) 3 Elliptical Mirror (Reflecting Plate) 4 Elliptical Mirror Rotating Device (Drive Unit) 6 Condenser Lens (Lens) 7 Condenser Lens Rotating Device (Drive Unit) 9 Projection Lens (Lens) 10 Projection Lens Rotating device (drive unit) 12 Main optical axis

Claims (2)

[Claims] 1. The semiconductor integrated device is provided on the wafer by irradiating the wafer with light from a light source and a reflection plate that reflects the light emitted from the light source through a reticle and a lens having a predetermined semiconductor integrated circuit pattern formed thereon. An exposure method for exposing a circuit pattern, wherein the exposure is performed while rotating the light source, the reflector and the lens about a main optical axis of the light source. 2. A light source, a reflection plate that reflects the light emitted from the light source, a lens that transmits the light emitted from the light source and the reflection plate, and the light source, the reflection plate, and the lens that are the main components of the light source. An exposure apparatus having a drive unit that rotates about an optical axis.