JPH05341501A - Photomask and production thereof - Google Patents
Photomask and production thereofInfo
- Publication number
- JPH05341501A JPH05341501A JP14975592A JP14975592A JPH05341501A JP H05341501 A JPH05341501 A JP H05341501A JP 14975592 A JP14975592 A JP 14975592A JP 14975592 A JP14975592 A JP 14975592A JP H05341501 A JPH05341501 A JP H05341501A
- Authority
- JP
- Japan
- Prior art keywords
- film
- shielding film
- transparent substrate
- light shielding
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はフォトマスクに係り，特
に低反射層として酸化クロム膜を有するフォトマスクお
よびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask, and more particularly to a photomask having a chromium oxide film as a low reflection layer and a method for manufacturing the same.
【０００２】半導体装置等の製造におけるリソグラフィ
工程に使用するフォトマスクは，透明基板上全面に遮光
膜を被着したマスクブランク上に所望のレジストを塗布
したフォトプレートに所望のパターンを形成したもので
ある。マスクブランクの表面には反射防止のため低反射
層が被着されている。A photomask used in a lithography process in manufacturing a semiconductor device or the like is a photomask in which a desired resist is coated on a mask blank in which a light-shielding film is deposited on the entire surface of a transparent substrate and a desired pattern is formed on the mask blank. is there. A low reflection layer is applied to the surface of the mask blank to prevent reflection.
【０００３】近年，半導体装置の高集積化にともない，
微細加工を行うためにフォトプレートは薄膜化したレジ
ストや化学増幅型レジストが使用されるようになった。
またレジストパターン形成後の遮光膜のエッチング工程
においては，表面低反射層の化学的性質が膜全体のエッ
チングレートを左右する。このため，表面低反射層の化
学的安定性を上げることが要求されている。In recent years, with the high integration of semiconductor devices,
In order to perform microfabrication, the photoplate has come to use a thinned resist or a chemically amplified resist.
Further, in the etching process of the light-shielding film after the formation of the resist pattern, the chemical property of the surface low-reflection layer affects the etching rate of the entire film. Therefore, it is required to improve the chemical stability of the low surface reflection layer.
【０００４】[0004]
【従来の技術】従来のマスクブランクにおいては，表面
低反射層をクロム(Cr)ターゲットを使用して酸素雰囲気
中で反応性スパッタリングにより形成していた。2. Description of the Related Art In a conventional mask blank, a low surface reflection layer is formed by reactive sputtering using a chromium (Cr) target in an oxygen atmosphere.
【０００５】ところが，クロムには表１に示されるよう
に多数の酸化状態があり，表面低反射層は化学的に不安
定な膜となってしまっていた。 表１ クロム酸化物一覧表 CrO （還元性） , Cr203（安定）, Cr02（酸化性）, Cr205, CrO3, CrO4, CrO5, Cr5O9, Cr5O12, Cr5O13, Cr3O5, Cr3O6,・・・等However, chromium has many oxidation states as shown in Table 1, and the surface low reflection layer is chemically unstable. Table 1 Cr oxides list CrO (reducing), Cr 2 0 3 (stable), Cr0 2 (oxidizing), Cr 2 0 5, CrO 3, CrO 4, CrO 5, Cr 5 O 9, Cr 5 O 12 , Cr 5 O 13 , Cr 3 O 5 , Cr 3 O 6 , ... etc.
【０００６】[0006]
【発明が解決しようとする課題】従来技術では，レジス
トの薄膜化を行う場合は表面低反射層上でのレジストの
濡れが悪く，また，化学増幅型等のレジスト膜内で化学
反応を起こすようなレジストでは，その反応を阻害する
といった問題が生じていた。In the prior art, when thinning the resist, the wetting of the resist on the low surface reflection layer is poor, and a chemical reaction occurs in the chemically amplified resist film. However, such resists had a problem of inhibiting the reaction.
【０００７】本発明は化学的に安定な低反射膜を有する
フォトマスクを提供し，遮光膜のエッチングを安定化
し，さらにレジストの薄膜化，安定化を可能にしてデバ
イスの微細化に寄与することを目的とする。The present invention provides a photomask having a chemically stable low-reflection film, stabilizes the etching of the light-shielding film, enables thinning and stabilization of the resist, and contributes to device miniaturization. With the goal.
【０００８】[0008]
【課題を解決するための手段】上記課題の解決は， １）透明基板３と，該透明基板の上に順に被着された遮
光膜32と表面低反射層33とを有し，該表面低反射層がCr
203 を主成分とする酸化クロム膜であるフォトマスク，
あるいは ２）透明基板３の上に遮光膜32を被着する工程と, 該遮
光膜の上にCr203 の組成を有する酸化クロムをターゲッ
トに用いたスパッタリングにより表面低反射層33を被着
する工程と，該表面低反射層33および遮光膜32に所望の
パターンを形成する工程とを有するフォトマスクの製造
方法により達成される。Means for Solving the Problems To solve the above-mentioned problems, 1) a transparent substrate 3, a light-shielding film 32 and a low surface reflection layer 33, which are sequentially deposited on the transparent substrate, are provided. Reflective layer is Cr
2 0 3 is a chromium oxide film mainly a photomask,
Or 2) a step of depositing a light shielding film 32 on the transparent substrate 3, deposition of the surface low reflective layer 33 by sputtering using a target of chromium oxide having a composition of Cr 2 0 3 on the light shielding film And a step of forming a desired pattern on the surface low-reflection layer 33 and the light shielding film 32.
【０００９】[0009]
【作用】本発明では，化学的に安定なCr203 の組成を有
する酸化クロムをターゲットに用いたスパッタリングに
より低反射層を形成することにより，低反射層をCr203
のみで構成されるようにしたものである。According to the present invention, by forming a low reflective layer by sputtering using a chromium oxide having a composition of chemically stable Cr 2 0 3 to the target, the low-reflection layer Cr 2 0 3
It is made up of only one.
【００１０】したがって，遮光膜のエッチングの際のエ
ッチングレートの変化が少なくなり，安定なエッチング
によりフォトマスク，レチクルの寸法精度の管理が容易
になり，また，安定な低反射層上に被着されるレジスト
の濡れがよく，さらに，レジスト中の化学反応を阻害す
る要因がなく，微細なレジストパターンの形成が容易に
なる。Therefore, the change of the etching rate at the time of etching the light-shielding film is reduced, the stable etching facilitates the control of the dimensional accuracy of the photomask and the reticle, and the stable low-reflection layer is deposited. The resist wets well, and there is no factor that hinders the chemical reaction in the resist, which facilitates the formation of a fine resist pattern.
【００１１】上記のレジストの濡れ性の向上の理由は，
安定な低反射層は表面の活性度が低いため，保管ケース
から出るガスの吸着が少ないためである。また，レジス
ト中の化学反応を阻害する要因がない理由は以下の通り
である。The reason why the wettability of the resist is improved is as follows.
This is because the stable low-reflection layer has a low surface activity, so that the gas emitted from the storage case is less adsorbed. The reason why there is no factor that hinders the chemical reaction in the resist is as follows.
【００１２】化学増幅型レジストに，例えば電子ビーム
(EB)露光用ネガ型レジストがある。このレジストはベー
スレジン, 架橋剤, 酸発生剤の3 成分からなり，露光時
にEBは酸発生剤と反応して酸を作る。これに露光後のベ
ークを行うと, 酸を触媒として架橋剤が反応してベース
レジンが架橋する。ここで酸は触媒として働くので１対
多数で架橋反応を起こせるので高感度化ができる特徴が
ある。Chemically amplified resists can be formed, for example, by electron beam
(EB) There is a negative resist for exposure. This resist consists of three components: a base resin, a cross-linking agent, and an acid generator. During exposure, EB reacts with the acid generator to form an acid. When this is baked after exposure, the crosslinking agent reacts with the acid as a catalyst to crosslink the base resin. Here, since the acid acts as a catalyst, a cross-linking reaction can occur in a one-to-many manner, and thus the acid can be highly sensitive.
【００１３】そこで，レジストと接する面に酸化数が不
足した Cr X 0 Y が存在すると, 上記のレジスト中の反
応中の酸がCrの酸化に消費されて Cr X 0 Y 膜近傍のレ
ジストの架橋反応を阻害する。Therefore, if Cr X 0 Y having an insufficient oxidation number exists on the surface in contact with the resist, the acid in the reaction in the above resist is consumed for the oxidation of Cr, and the cross-linking of the resist in the vicinity of the Cr X 0 Y film is performed. Inhibits the reaction.
【００１４】[0014]
【実施例】図１は本発明の実施例のマスクブランクの断
面図である。図において，３は透明基板で合成石英基
板，31は裏面反射膜で Cr X 0 Y 膜,32は遮光膜でCr膜,
33は表面反射膜でCr203 膜である。1 is a sectional view of a mask blank according to an embodiment of the present invention. In the figure, 3 is a transparent substrate, a synthetic quartz substrate, 31 is a back surface reflection film of Cr X 0 Y film, 32 is a light shielding film of Cr film,
33 is a Cr 2 0 3 film on the surface reflection film.
【００１５】フォトマスクはマスクブランクの上記の各
膜を通常のリソグラフィによりパターニングして形成さ
れる。図２は本発明の実施例のプロセスを説明する装置
の断面図である。The photomask is formed by patterning each of the above films of the mask blank by ordinary lithography. FIG. 2 is a sectional view of an apparatus for explaining the process of the embodiment of the present invention.
【００１６】図において，１は真空チャンバ，２は排気
口，３は透明基板，４は基板ホルダ，４’は基板ホルダ
の回転軸，５はCr203 ターゲット, ６はCrターゲット,
７はCr203 用シャッタ，８はCr用シャッタ，９はスパッ
タガス導入口，10はCr203 用RF電源, 11はCr用DC電源で
ある。[0016] In FIG, 1 is a vacuum chamber, 2 is an exhaust port, the transparent substrate 3, the substrate holder 4, 4 'is the axis of rotation of the substrate holder, 5 Cr 2 0 3 targets, the Cr target 6,
7 Cr 2 0 3 shutter, 8 Cr shutter, 9 sputtering gas inlet, the RF power supply Cr 2 0 3 10, 11 is a DC power supply Cr.
【００１７】まず，透明基板３として合成石英基板を用
い，これを真空チャンバ１内の基板ホルダ４にセット
し，排気口２より排気して真空チャンバ１内圧力を所望
の圧力に下げる。First, a synthetic quartz substrate is used as the transparent substrate 3, which is set on the substrate holder 4 in the vacuum chamber 1 and exhausted from the exhaust port 2 to lower the internal pressure of the vacuum chamber 1 to a desired pressure.
【００１８】裏面反射膜として，スパッタガス導入口９
より酸素(O2)と窒素(N2)を導入し，Crターゲット６にCr
用DC電源11よりDC電圧を印加し，真空チャンバ１内にプ
ラズマを形成し，Cr用シャッタ８を開放して，反応性ス
パッタリングにより，透明基板３の上に裏面低反射層と
して厚さ10 nm の Cr X 0 Y 膜31を被着する。As a back reflection film, a sputter gas inlet 9
More oxygen (O 2 ) and nitrogen (N 2 ) are introduced to the Cr target 6 and Cr
A DC voltage is applied from the DC power source 11 for plasma, plasma is formed in the vacuum chamber 1, the shutter 8 for Cr is opened, and reactive sputtering is performed to form a back surface low reflection layer with a thickness of 10 nm on the transparent substrate 3. Of Cr X 0 Y film 31 is deposited.
【００１９】次に，遮光膜として, スパッタガス導入口
９より導入するガスをアルゴン(Ar)に切替え, 前記と同
様にしてCrターゲット６上にプラズマを形成して裏面反
射膜31の上に厚さ70 nm のCr膜32を形成し，放電を停止
し，Cr用シャッタ８を閉じる。Next, as a light-shielding film, the gas introduced from the sputter gas inlet 9 is switched to argon (Ar), plasma is formed on the Cr target 6 in the same manner as described above, and the thickness is formed on the back surface reflection film 31. A Cr film 32 having a thickness of 70 nm is formed, the discharge is stopped, and the Cr shutter 8 is closed.
【００２０】次に, 表面低反射膜として, スパッタガス
導入口９よりArを導入しながらCr203 ターゲット５にCr
203 用RF電源10よりRF電圧を印加してプラズマを形成
し，Cr203 用シャッタ７を開放して，Cr膜32の上に厚さ
20 nm のCr203 膜33を被着する。Next, as a surface low-reflection film, while introducing Ar from the sputter gas introducing port 9, Cr was applied to the Cr 2 O 3 target 5.
2 0 from 3 for RF power supply 10 applies a RF voltage to form a plasma, by opening the Cr 2 0 3 shutter 7, the thickness on the Cr film 32
The 20 nm of Cr 2 0 3 film 33 deposited.
【００２１】これらの成膜工程中は基板ホルダ４は基板
ホルダの回転軸４’の周りを回転させる。成膜工程終了
後，真空チャンバ１内を大気圧に戻し透明基板３を取り
出す。以上の成膜工程によりマスクブランクが完成す
る。During these film forming steps, the substrate holder 4 is rotated around the rotation axis 4'of the substrate holder. After the film forming process is completed, the inside of the vacuum chamber 1 is returned to atmospheric pressure and the transparent substrate 3 is taken out. The mask blank is completed by the above film forming process.
【００２２】実施例で作成したマスクブランクにレジス
ト（東レ社製EBR-9)をスピンコートしたが，従来のマス
クブランクに発生していた滴下痕跡の発生を抑止するこ
とができた。A resist (EBR-9 manufactured by Toray Industries, Inc.) was spin-coated on the mask blanks prepared in the examples, but it was possible to suppress the generation of traces of dripping that had occurred in conventional mask blanks.
【００２３】また，化学増幅型レジスト（シプレー社製
SAL-601)を塗布して, パターニングしたところ，従来
（90〜100 ℃）より広いベーク温度の範囲（85〜110
℃）で安定であることが分かった。Further, a chemically amplified resist (made by Shipley Co., Ltd.
When SAL-601) was applied and patterned, a wider baking temperature range (85 to 110 ° C) than that of the past (90 to 100 ° C) was obtained.
It was found to be stable at (° C).
【００２４】実施例では，裏面低反射層は Cr X 0 Y 膜
であるが，Cr203 膜に代えることも可能である。また，
プロセス説明用のフパッタ装置はバッチ式の装置を用い
たが，インライン型，マルチチャンバ型装置にも本発明
は適用できる。[0024] In the embodiment, although the rear surface low-reflection layer is a Cr X 0 Y film, it is also possible to replace the Cr 2 0 3 film. Also,
A batch type device was used as the flapper device for explaining the process, but the present invention can also be applied to in-line type and multi-chamber type devices.
【００２５】[0025]
【発明の効果】本発明によれぱ，化学的に安定な低反射
膜を有するマスクブランクが得られ，遮光膜のパターニ
ングの際のエッチングが安定化し，さらにレジストの薄
膜化，安定化が可能となりデバイスの微細化に寄与する
ことができた。According to the present invention, a mask blank having a chemically stable low-reflection film can be obtained, etching during patterning of the light-shielding film can be stabilized, and the resist can be thinned and stabilized. We were able to contribute to device miniaturization.
【図１】 本発明の実施例のマスクブランクの断面図FIG. 1 is a sectional view of a mask blank according to an embodiment of the present invention.
【図２】 本発明の実施例のプロセスを説明する装置の
断面図FIG. 2 is a sectional view of an apparatus for explaining a process of an embodiment of the present invention.
３ 透明基板で合成石英基板 31 裏面反射膜で Cr X 0 Y 膜 32 遮光膜でCr膜 33 表面反射膜でCr203 膜 １ 真空チャンバ ２ 排気口 ３ 透明基板 ４ 基板ホルダ ４’ 基板ホルダの回転軸 ５ Cr203 ターゲット ６ Crターゲット ７ Cr203 用シャッタ ８ Cr用シャッタ ９ スパッタガス導入口 10 Cr203 用RF電源 11 Cr用DC電源3 Transparent substrate and synthetic quartz substrate 31 Backside reflection film Cr X 0 Y film 32 Light-shielding film Cr film 33 Surface reflection film Cr 2 0 3 film 1 Vacuum chamber 2 Exhaust port 3 Transparent substrate 4 Substrate holder 4 ' rotary shaft 5 Cr 2 0 3 target 6 Cr target 7 Cr 2 0 3 shutter 8 Cr shutter 9 sputtering gas inlet 10 Cr 2 0 3 for RF power 11 Cr for DC power supply
Claims (2)
被着された遮光膜(32)と該遮光膜より反射率の低い表面
低反射層(33)とを有し，該表面低反射層がCr203 を主成
分とする酸化クロム膜であることを特徴とするフォトマ
スク。1. A transparent substrate (3), a light-shielding film (32) sequentially deposited on the transparent substrate, and a low surface reflection layer (33) having a reflectance lower than that of the light-shielding film. photomask wherein a surface low reflection layer has a chromium oxide film mainly containing Cr 2 0 3.
る工程と,該遮光膜の上にCr203 の組成を有する酸化ク
ロムをターゲットに用いたスパッタリングにより表面低
反射層33を被着する工程と，該表面低反射層(33)および
遮光膜(32)に所望のパターンを形成する工程とを有する
ことを特徴とするフォトマスクの製造方法。A step of depositing a light shielding film (32) over the 2. A transparent substrate (3), low surface by sputtering using a chromium oxide target having a composition of Cr 2 0 3 on the light shielding film A method of manufacturing a photomask, comprising: a step of depositing a reflective layer 33; and a step of forming a desired pattern on the low surface reflection layer (33) and the light shielding film (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975592A JPH05341501A (en) | 1992-06-10 | 1992-06-10 | Photomask and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975592A JPH05341501A (en) | 1992-06-10 | 1992-06-10 | Photomask and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05341501A true JPH05341501A (en) | 1993-12-24 |
Family
ID=15482045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14975592A Pending JPH05341501A (en) | 1992-06-10 | 1992-06-10 | Photomask and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05341501A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006006540A1 (en) * | 2004-07-09 | 2006-01-19 | Hoya Corporation | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| JP2006048033A (en) * | 2004-07-09 | 2006-02-16 | Hoya Corp | Photomask blank, method for manufacturing photomask, and method for manufacturing semiconductor device |
| JP2006133519A (en) * | 2004-11-05 | 2006-05-25 | Toshiba Corp | Mask blank substrate |
-
1992
- 1992-06-10 JP JP14975592A patent/JPH05341501A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006006540A1 (en) * | 2004-07-09 | 2006-01-19 | Hoya Corporation | Photomask blank, photomask manufacturing method and semiconductor device manufacturing method |
| JP2006048033A (en) * | 2004-07-09 | 2006-02-16 | Hoya Corp | Photomask blank, method for manufacturing photomask, and method for manufacturing semiconductor device |
| JP2006133519A (en) * | 2004-11-05 | 2006-05-25 | Toshiba Corp | Mask blank substrate |
| JP4673039B2 (en) * | 2004-11-05 | 2011-04-20 | 株式会社東芝 | Mask blank substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1418466B1 (en) | Halftone phase shift mask blank, and method of manufacturing the same | |
| JP6367401B2 (en) | Phase shift mask blank and manufacturing method thereof, phase shift mask and manufacturing method thereof, and display device manufacturing method | |
| EP1152291B1 (en) | Photomask blank and photomask | |
| JP2002090978A (en) | Method of manufacturing phase shift mask blank and apparatus for manufacturing phase shift mask blank | |
| US6228541B1 (en) | Phase-shifting photomask blank, phase-shifting photomask, method for producing them and apparatus for manufacturing the blank | |
| JP2002169265A (en) | Photomask blank and method of manufacturing photomask blank | |
| JPH0476101B2 (en) | ||
| JP2024023457A (en) | Substrate with multilayer reflective film for EUV mask blank, manufacturing method thereof, and EUV mask blank | |
| EP1582921B1 (en) | Film-depositing target and preparation of phase shift mask blank | |
| US20020187405A1 (en) | Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks | |
| JP4489820B2 (en) | Phase shift mask blank manufacturing method and phase shift mask blank manufacturing apparatus | |
| JPH05341501A (en) | Photomask and production thereof | |
| US4810619A (en) | Photolithography over reflective substrates comprising a titanium nitride layer | |
| JPS6052428B2 (en) | Formation method of chromium oxide film | |
| JP4641086B2 (en) | Blank for halftone phase shift photomask, halftone phase shift photomask, and manufacturing method thereof | |
| KR100472115B1 (en) | Blank-mask and its method for manufacturing | |
| CN113005410A (en) | Method and apparatus for manufacturing mask substrate | |
| TWI792058B (en) | Mask substrate and mask | |
| JP2007271775A (en) | Mask blank and photomask | |
| JP7417578B2 (en) | Mask blanks and their manufacturing method | |
| KR20190023487A (en) | Photomask blank and manufacturing method and sputter machine for flat panel display lithography | |
| KR100780815B1 (en) | Manufacturing method of blankmask and photomask for liquid crystal display | |
| JP4137667B2 (en) | Phase shift mask blank manufacturing method and phase shift mask blank manufacturing apparatus | |
| JPH0915831A (en) | Manufacture of exposing mask | |
| TW202141170A (en) | Photomask substrate, phase shift photomask and manufacturing method thereof wherein the photomask substrate includes a phase shift layer, an etching stop layer and a light shielding layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20001212 |