JPH05335214A - Light projection exposure method - Google Patents

Light projection exposure method

Info

Publication number
JPH05335214A
JPH05335214A JP4141755A JP14175592A JPH05335214A JP H05335214 A JPH05335214 A JP H05335214A JP 4141755 A JP4141755 A JP 4141755A JP 14175592 A JP14175592 A JP 14175592A JP H05335214 A JPH05335214 A JP H05335214A
Authority
JP
Japan
Prior art keywords
pattern
photomask
modified illumination
elements
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4141755A
Other languages
Japanese (ja)
Inventor
Kenji Nakagawa
健二 中川
Masao Taguchi
眞男 田口
Hiroyuki Tanaka
裕之 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4141755A priority Critical patent/JPH05335214A/en
Priority to US08/069,853 priority patent/US5465220A/en
Priority to EP93304280A priority patent/EP0573281B1/en
Publication of JPH05335214A publication Critical patent/JPH05335214A/en
Priority to US08/510,128 priority patent/US5607821A/en
Priority to US08/734,790 priority patent/US6045976A/en
Priority to KR97041359A priority patent/KR0136800B1/en
Priority to US09/500,527 priority patent/US6420094B1/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Projection-Type Copiers In General (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide a method wherein a device pattern (a photomask pattern) is projected and exposed by means of a deformed illumination system which is optimum for the pattern regarding a light projection exposure method for a photolithographic operation in a very fine working operation for the manufacture of a semiconductor device. CONSTITUTION:In a method, a pattern on a photomask is projected and exposed on a resist on a substrate by using an aligner which is composed of a deformed illumination system, a photomask 4 and a projection lens. The method is constituted in the following manner: a deformed illumination 33 which is provided with four elements 32 whose optical axes are symmetric with respect to a point is used as a deformed illumination light source; and the deformed illumination is turned and arranged in such a way that the line connecting the two elements the distance between which is smallest out of the four elements 32 is parallel or perpendicular to the line direction of the pattern according to the line direction of the pattern on the photomask 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体装置の製造など
での微細加工におけるフォトリソグラフィに関し、より
詳しくは、光リソグラフィーでの光投影露光方法に関す
る。超ＬＳＩなどの半導体装置での高集積化・微細加工
の進展はリソグラフィー技術改良に大きく依存してお
り、その中でも光を用いた光リソグラフィーは量産に適
し、経済性の理由からも採用されており、さらに改良の
ための研究開発が行われている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to photolithography in microfabrication in the manufacture of semiconductor devices, and more particularly to an optical projection exposure method in optical lithography. The progress of high integration and fine processing in semiconductor devices such as VLSI depends largely on the improvement of lithography technology. Among them, optical lithography using light is suitable for mass production and is also adopted for economic reasons. , And research and development for further improvement are being conducted.

【０００２】[0002]

【従来の技術】光投影露光技術での解像度を高めるため
に、レンズの開口度（ＮＡ）を高くすることや光源の波
長を短くすることが重要である。一方、焦点深度はＮＡ
の増大とともに減少することになる。そこで、限界解像
度および焦点深度を向上させる変形照明法（斜め入射の
照明法）が最近注目されている（例えば、日経マイクロ
デバイス、No. 82、１９９２年４月号、pp.28-37参
照）。2. Description of the Related Art In order to improve the resolution in light projection exposure technology, it is important to increase the numerical aperture (NA) of a lens and to shorten the wavelength of a light source. On the other hand, the depth of focus is NA
It will decrease with the increase of. Therefore, the modified illumination method (illumination method of oblique incidence) that improves the limit resolution and the depth of focus has recently received attention (see, for example, Nikkei Microdevice, No. 82, April 1992, pp.28-37). ..

【０００３】それ以前の従来照明法では露光装置の光軸
と一致した円形穴（絞りアパーチャ）からフォトマスク
（レチクル）への照明光は垂直入射である。投影光学系
の解像限界に近い微細なパターンを形成する場合、基本
的にはフォトマスクから出た０次光、＋１次光および−
次光の３光束で結像させているが、変形照明法では絞り
の穴の位置が光軸からずらされており、穴からの照明光
はフォトマスクに対して斜めに入射し、フォトマスクか
ら出た０次光および＋１次光の２光束で結像させてい
る。焦点位置では従来照明法の方がコントラストが高い
が、デフォーカス位置では変形照明法の方がコントラス
トが高くなり、総合的に焦点深度および解像度が向上す
る。In the conventional illumination method before that, the illumination light from the circular hole (diaphragm aperture) that coincides with the optical axis of the exposure apparatus is vertically incident on the photomask (reticle). When forming a fine pattern close to the resolution limit of the projection optical system, basically, 0th order light, + 1st order light and −
Although the image is formed with three light beams of the next light, the position of the aperture of the diaphragm is shifted from the optical axis in the modified illumination method, and the illumination light from the aperture is obliquely incident on the photomask. An image is formed with two light fluxes of the 0th-order light and the + 1st-order light that have emerged. The conventional illumination method has a higher contrast at the focus position, but the modified illumination method has a higher contrast at the defocus position, and the depth of focus and the resolution are improved overall.

【０００４】変形照明での光投影露光装置（図１）は、
光源３５、集光ミラー３６、ハエの目レンズ１および照
明レンズ２からなる照明系３、所定のパターン１０付き
フォトマスク４、投影レンズ５およびレジスト層付き基
板６からなる従来の光投影露光装置において、例えば、
光源３６とフォトマスク４との間に、中心部が遮光して
光軸からずれた位置に穴（透穴）を備えた絞り（以下、
変形照明絞りと呼ぶ）７を配置したものである。変形照
明絞り７は光源とレンズ２との間に配置する。そして、
変形照明絞り（アパーチャー）７における穴形状とし
て、輪帯穴としたものや点対称の４つ穴８（図２）とし
たものが知られている。An optical projection exposure apparatus with modified illumination (FIG. 1) is
In a conventional light projection exposure apparatus including a light source 35, a condenser mirror 36, an illumination system 3 including a fly-eye lens 1 and an illumination lens 2, a photomask 4 with a predetermined pattern 10, a projection lens 5 and a substrate 6 with a resist layer. , For example,
A diaphragm provided with a hole (a through hole) between the light source 36 and the photomask 4 at a position shifted from the optical axis by shielding the central portion (hereinafter,
A modified illumination diaphragm) 7 is arranged. The modified illumination diaphragm 7 is arranged between the light source and the lens 2. And
As a hole shape in the modified illumination diaphragm (aperture) 7, a ring hole and a point symmetrical four hole 8 (FIG. 2) are known.

【０００５】[0005]

【発明が解決しようとする課題】フォトマスク３でのパ
ターンが、例えば、図３に示すような図面上で水平部分
１１Ａ、垂直部分１１Ｂおよび斜め部分１１Ｃを有しか
つラインアンド（＆）スペースが微細化で0.３μｍ程度
に細くかつ狭い寸法となっているパターンをけいせいす
る場合において、以前の図１０に示す形状の照明を用い
た光投影露光方法で基板上のレジスト層を露光し、現像
すると、図４に示すように解像度の向上が図れずに（解
像度が低くて）一本の太いレジスト層ライン１２となっ
てしまう。また、図１１に示した４分割変形照明３３を
用いた変形照明法の光投影露光方法で基板上のレジスト
層を露光し、その際に、変形照明要素３２の配置を要素
３２のうちで、最短距離にある２つの穴を結ぶ線が、図
面上でパターンのライン方向と平行ないし垂直であるよ
うにし、そして現像すると、図５に示すように、図面上
で平行ないし垂直のパターンライン部分１３Ａおよび１
３Ｂは細いレジスト層ラインとして形成されるが、斜め
のパターンライン部分１３Ｃが一体化して太いレジスト
層ラインとなってしまう。The pattern on the photomask 3 has, for example, a horizontal portion 11A, a vertical portion 11B and an oblique portion 11C in the drawing as shown in FIG. 3 and has a line and (&) space. In the case of patterning a fine and narrow dimension of about 0.3 μm by miniaturization, the resist layer on the substrate is exposed by the light projection exposure method using the illumination of the shape shown in FIG. When developed, the resolution cannot be improved as shown in FIG. 4 (the resolution is low), and one thick resist layer line 12 is formed. Further, the resist layer on the substrate is exposed by the light projection exposure method of the modified illumination method using the four-division modified illumination 33 shown in FIG. 11, and at that time, the arrangement of the modified illumination elements 32 among the elements 32 is When the line connecting the two holes at the shortest distance is parallel or perpendicular to the line direction of the pattern on the drawing and developed, as shown in FIG. And 1
3B is formed as a thin resist layer line, but the diagonal pattern line portion 13C is integrated to form a thick resist layer line.

【０００６】このように一部にレジストパターンに解像
不良が生じるのは、図６に示すように、フォトマスク４
の斜め部分１１Ｃへの照明光（１３Ａ、１３Ｂおよび１
３Ｃ）がその上方の変形照明３３の要素３２から基本的
に３方向からとなるからである。そして、微細に解像で
きるのは、図７に示すように、フォトマスク４の水平部
分１１Ａ（または垂直部分１１Ｂ）への照明光（１４Ａ
および１４Ｂ）がその上方の変形照明３３の要素３２か
ら基本的に２方向からとなるからである。As shown in FIG. 6, the photomask 4 has a defect in the resolution of the resist pattern.
Illumination light (13A, 13B and 1
3C) is essentially from three directions from the element 32 of the modified illumination 33 above it. Then, as shown in FIG. 7, it is possible to finely resolve the illumination light (14A) to the horizontal portion 11A (or the vertical portion 11B) of the photomask 4.
And 14B) from the element 32 of the modified illumination 33 above it essentially from two directions.

【０００７】従って、４つ穴の変形照明絞りを固定して
いる限りは、個々のパターン形状に合わせた照明システ
ムとはなってなおらず、変形照明法での斜め入射の効果
を最大限に発揮させてはいない。本発明の目的は、４分
割変形照明を用いた場合で、デバイスパターン（フォト
マスクパターン）に最適な変形照明系かつ分割照明系で
投影露光する方法を提供することである。Therefore, as long as the modified illumination diaphragm with four holes is fixed, the illumination system does not match the individual pattern shape, and the effect of oblique incidence in the modified illumination method is maximized. I haven't let it happen. An object of the present invention is to provide a method of performing projection exposure with a modified illumination system and a divided illumination system that are optimum for a device pattern (photomask pattern) when using 4-division modified illumination.

【０００８】[0008]

【課題を解決するための手段】上述の目的が、変形照明
系、フォトマスク、投影レンズからなる露光装置を用い
て、該フォトマスクのパターンを基板上のレジストに投
影露光する方法において、前記変形照明系に、光軸を点
対称軸とした４分割した要素を有する変形照明を用い
て、前記フォトマスクのパターンのライン方向に応じ
て、該変形照明を回転させて露光を行うことを特徴とす
る光投影露光方法によって達成される。The above-mentioned object is a method of projecting and exposing a pattern on a photomask onto a resist on a substrate using an exposure apparatus comprising a modified illumination system, a photomask, and a projection lens. The modified illumination having four divided elements with the optical axis as a point symmetry axis is used for the illumination system, and the modified illumination is rotated to perform exposure according to the line direction of the pattern of the photomask. It is achieved by the optical projection exposure method.

【０００９】そして、フォトマスク毎に、変形照明での
４分割した要素のうちで、最短距離にある２つ要素を結
ぶ線が、前記パターンのライン方向と平行ないし垂直で
あるように、前記変形照明を回転配置することになる。Then, for each photomask, among the four divided elements of the modified illumination, the line connecting the two elements with the shortest distance is parallel or perpendicular to the line direction of the pattern. The lighting will be rotated.

【００１０】[0010]

【作用】本願発明では、解像度を向上させたいパターン
毎に、そのライン方向に合わせて、該ラインを長手方向
から見て、２方向の斜め入射光となる様に４分割変形照
明を回転配置するので、変形照明法での斜め入射の効果
を十分に発揮させることができる。According to the present invention, for each pattern for which the resolution is desired to be improved, the four-divided modified illumination is rotationally arranged so as to be oblique incident light in two directions when viewed from the longitudinal direction of the line according to the line direction. Therefore, the effect of oblique incidence in the modified illumination method can be sufficiently exerted.

【００１１】[0011]

【実施例】以下、添付図面を参照して、本発明の実施態
様例によって本発明を詳細に説明する。例えば、ＤＲＡ
Ｍにおいては、図８に示すように、活性領域２１、ビッ
ト線２２、ワード線２３および蓄積キャパシタ２４のパ
ターン配置となっている。それぞれのパターンに対応す
るレジストパターンを、図１の光投影露光装置（ステッ
パー）にて露光する。露光装置の変形照明は、図１１に
示すような４分割光源を用いる。変形光源の作り方とし
ては、例えば、ハエの目レンズ１の後に図２に示すよう
な４つ穴のあいた絞り７を置くことにより、作ることが
できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings by way of example embodiments of the present invention. For example, DRA
In M, as shown in FIG. 8, the active regions 21, the bit lines 22, the word lines 23, and the storage capacitors 24 are arranged in a pattern. A resist pattern corresponding to each pattern is exposed by the light projection exposure apparatus (stepper) shown in FIG. The modified illumination of the exposure apparatus uses a four-divided light source as shown in FIG. The modified light source can be manufactured by, for example, placing a diaphragm 7 having four holes as shown in FIG. 2 after the fly-eye lens 1.

【００１２】活性領域２１のパターンのみは図９に示す
ような繰返しパターンであり、これがフォトマスクのク
ロムパターンでもある。このパターン２１は図面上で斜
めに延在しており、このパターンのライン方向に対し
て、変形照明３３の４つの要素３２のうちで最短距離に
ある２つの要素を結ぶ線が平行ないし垂直であるよう
に、該照明３２を回転配置する。絞り７を用いる場合
は、絞りを回転させるだけでよい。これは、図６および
図７に示した変形照明３２の配置のうちで、図６の場合
を採用することである。図１２に示すように、斜めパタ
ーンがお互いに直交していない場合にも、この方法が適
用できる。この場合は、２つの斜めパターンの延在して
いる方向の中心線方向に、変形照明３３の４つの要素３
２のうちで最短距離にある２つの要素を結ぶ線を一致さ
もるように変形照明３３を回転させる。変形照明を回転
させることにより、水平・垂直方向に延在するパターン
への解像力向上効果は失われるが、図８に示すＤＲＡＭ
の活性領域において、水平・垂直なパターンはセル以外
の領域にある。セル以外の領域はパターン寸法はモル部
よりも、大きく設計されるため、解像力向上の効果が失
われても問題にはならない。Only the pattern of the active region 21 is a repeating pattern as shown in FIG. 9, which is also the chrome pattern of the photomask. This pattern 21 extends obliquely in the drawing, and the line connecting the two elements having the shortest distance among the four elements 32 of the modified illumination 33 is parallel or perpendicular to the line direction of this pattern. The illumination 32 is rotationally arranged as is. When using the diaphragm 7, it is sufficient to rotate the diaphragm. This is to adopt the case of FIG. 6 in the arrangement of the modified illumination 32 shown in FIGS. 6 and 7. As shown in FIG. 12, this method can be applied even when the oblique patterns are not orthogonal to each other. In this case, the four elements 3 of the modified illumination 33 are arranged in the direction of the center line in the extending direction of the two oblique patterns.
The modified illumination 33 is rotated so that the line connecting the two elements having the shortest distance among the two is aligned. By rotating the modified illumination, the resolution improving effect on the pattern extending in the horizontal and vertical directions is lost, but the DRAM shown in FIG.
In the active area of, the horizontal and vertical patterns are in areas other than the cells. Since the pattern size is designed to be larger than the molar part in the area other than the cell, it does not matter even if the effect of improving the resolution is lost.

【００１３】そして、ビット線２２、ワード線２３およ
び蓄積キャパシタ２４のそれぞれのパターンについて
は、図面上で水平方向または垂直方向に延在するパター
ンである。ビット線２２ではほぼ水平なラインパターン
であり、ワード線２３は垂直なラインパターンであり、
そして蓄積キャパシタ２４は長手方向が垂直な矩形パタ
ーンである。これらの場合には、ライン方向に対して、
変形照明３３の４つの要素３２のうちで最短距離にある
２つの要素を結ぶ線が平行ないし垂直であるように、図
７に示した変形照明３３の配置にする。変形照明３３の
配置の変更は、光軸を中心として４５度の回転で行え
る。The patterns of the bit line 22, the word line 23 and the storage capacitor 24 are patterns extending in the horizontal direction or the vertical direction in the drawing. The bit line 22 has a substantially horizontal line pattern, and the word line 23 has a vertical line pattern.
The storage capacitor 24 has a rectangular pattern whose longitudinal direction is vertical. In these cases, for the line direction,
The modified illumination 33 shown in FIG. 7 is arranged so that the line connecting the two elements having the shortest distance among the four elements 32 of the modified illumination 33 is parallel or vertical. The layout of the modified illumination 33 can be changed by rotating the optical axis about 45 degrees.

【００１４】いずれの場合においても、光源にｉ線（波
長λ＝0.３６５μｍ）を用い、開口度（ＮＡ）が0.５の
投影レンズで、ライン＆スペースが0.３μｍの解像度で
パターンを得ることができる。In any case, a projection lens with an i-line (wavelength λ = 0.365 μm) is used as a light source, a numerical aperture (NA) is 0.5, and a line & space is a pattern with a resolution of 0.3 μm. Obtainable.

【００１５】[0015]

【発明の効果】以上説明したように、本発明に係る変形
照明方式の光投影露光方法によれば、パターン形状に応
じて最適の露光を行って解像度を高めたレジストパター
ン（所定のデバイスパターン）を得ることができる。As described above, according to the modified projection type light projection exposure method of the present invention, a resist pattern (predetermined device pattern) is formed by performing optimum exposure according to the pattern shape to enhance the resolution. Can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図１】変形照明方式の光投影露光装置の概略図であ
る。FIG. 1 is a schematic view of a modified illumination type light projection exposure apparatus.

【図２】４つ穴の変形照明絞りの平面図である。FIG. 2 is a plan view of a modified illumination diaphragm having four holes.

【図３】フォトマスクのラインパターンの部分平面図で
ある。FIG. 3 is a partial plan view of a line pattern of a photomask.

【図４】以前の光投影露光装置によるレジストラインパ
ターンの部分平面図である。FIG. 4 is a partial plan view of a resist line pattern formed by a previous light projection exposure apparatus.

【図５】変形照明方式でのレジストラインパターンの部
分平面図である。FIG. 5 is a partial plan view of a resist line pattern in a modified illumination method.

【図６】変形照明方式での３方向入射光となる場合のフ
ォトマスクと絞りとの関係を示す概略図である。FIG. 6 is a schematic diagram showing a relationship between a photomask and a diaphragm in the case of three-direction incident light in a modified illumination system.

【図７】変形照明方式での２方向入射光となる場合（解
像度の良い場合）のフォトマスクと絞りとの関係を示す
概略図である。FIG. 7 is a schematic diagram showing a relationship between a photomask and a diaphragm in the case of two-direction incident light in a modified illumination system (when resolution is good).

【図８】ＤＲＡＭのパターンを示す概略部分平面図であ
る。FIG. 8 is a schematic partial plan view showing a pattern of a DRAM.

【図９】ＤＲＡＭの活性領域のパターンを示す概略部分
平面図である。FIG. 9 is a schematic partial plan view showing a pattern of an active region of a DRAM.

【図１０】通常照明の形状を示す平面図である。FIG. 10 is a plan view showing the shape of normal illumination.

【図１１】分割照明の形状を示す平面図である。FIG. 11 is a plan view showing the shape of divided illumination.

【図１２】お互いに直交しない場合の分割照明の回転を
示す平面図である。FIG. 12 is a plan view showing rotation of divided illuminations when they are not orthogonal to each other.

【符号の説明】[Explanation of symbols]

１…光源 ３…照明系 ４…フォトマスク ５…投影レンズ ６…基板 ７…変形照明絞り ８…穴 １１…クロムライン １２…太いレジスト層ライン １３Ａ、１３Ｂ…細いレジスト層ライン １３Ｃ…太いレジスト層ライン ２１…活性領域パターン ２２…ビット線パターン ２３…ワード線パターン ３１…通常照明形状 ３２…分割照明の要素 ３３…分割照明 DESCRIPTION OF SYMBOLS 1 ... Light source 3 ... Illumination system 4 ... Photomask 5 ... Projection lens 6 ... Substrate 7 ... Deformation illumination diaphragm 8 ... Hole 11 ... Chrome line 12 ... Thick resist layer line 13A, 13B ... Thin resist layer line 13C ... Thick resist layer line 21 ... Active area pattern 22 ... Bit line pattern 23 ... Word line pattern 31 ... Normal illumination shape 32 ... Divided illumination element 33 ... Divided illumination

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｇ０２Ｂ 26/00 9226−2Ｋ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location // G02B 26/00 9226-2K

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 変形照明系、フォトマスク、投影レンズ
からなる露光装置を用いて、該フォトマスクのパターン
を基板上のレジストに投影露光する方法において、前記
変形照明系の光源に、光軸を点対称軸とした４つ要素
（３２）を有する変形照明（３３）を用いて、前記フォ
トマスク（４）のパターンのライン方向に応じて、該変
形照明（３３）を回転させて露光を行うことを特徴とす
る光投影露光方法。1. A method of projecting and exposing a pattern on a photomask onto a resist on a substrate using an exposure device comprising a modified illumination system, a photomask, and a projection lens, wherein an optical axis is provided to a light source of the modified illumination system. Exposure is performed by rotating the modified illumination (33) according to the line direction of the pattern of the photomask (4) by using the modified illumination (33) having four elements (32) as the axis of point symmetry. An optical projection exposure method characterized by the above. 【請求項２】 前記変形照明（３３）での４つ要素（３
２）のうちで、最短距離にある２つの要素を結ぶ線が、
前記パターンのライン方向と平行ないし垂直であるよう
に、前記変形照明（３３）を回転配置することを特徴と
する請求項１記載の光投影露光方法。2. The four elements (3) in the modified illumination (33).
In 2), the line connecting the two elements with the shortest distance is
2. The light projection exposure method according to claim 1, wherein the modified illumination (33) is rotationally arranged so as to be parallel or perpendicular to the line direction of the pattern. 【請求項３】 前記変形照明（３３）での４つ要素（３
２）のうちで、最短距離にある２つの要素を結ぶ線が、
前記パターンのライン方向の中心線と一致するように、
前記変形照明（３３）を回転配置することを特徴とする
請求項１記載の光投影露光方法。3. The four elements (3) in the modified illumination (33)
In 2), the line connecting the two elements with the shortest distance is
To match the center line in the line direction of the pattern,
The light projection exposure method according to claim 1, wherein the modified illumination (33) is arranged in a rotating manner.
JP4141755A 1902-06-09 1992-06-02 Light projection exposure method Pending JPH05335214A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP4141755A JPH05335214A (en) 1992-06-02 1992-06-02 Light projection exposure method
US08/069,853 US5465220A (en) 1992-06-02 1993-06-01 Optical exposure method
EP93304280A EP0573281B1 (en) 1992-06-02 1993-06-02 Method for optimizing a light source profile in an optical exposure apparatus and optical exposure method in which a light source profile is set using such optimization method, in particular where the light is projected obliquely towards a mask
US08/510,128 US5607821A (en) 1902-06-09 1995-08-01 Optical exposure method
US08/734,790 US6045976A (en) 1992-06-02 1996-10-25 Optical exposure method
KR97041359A KR0136800B1 (en) 1992-06-02 1997-08-27 An optimization method for a light source profile
US09/500,527 US6420094B1 (en) 1992-06-02 2000-02-09 Optical exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4141755A JPH05335214A (en) 1992-06-02 1992-06-02 Light projection exposure method

Publications (1)

Publication Number Publication Date
JPH05335214A true JPH05335214A (en) 1993-12-17

Family

ID=15299443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4141755A Pending JPH05335214A (en) 1902-06-09 1992-06-02 Light projection exposure method

Country Status (1)

Country Link
JP (1) JPH05335214A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124177A (en) * 2006-11-10 2008-05-29 Nikon Corp Method and device for exposure, and manufacturing method of device
JP2010092079A (en) * 2010-01-27 2010-04-22 Nikon Corp Method for manufacturing liquid crystal display and exposure apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124177A (en) * 2006-11-10 2008-05-29 Nikon Corp Method and device for exposure, and manufacturing method of device
JP2010092079A (en) * 2010-01-27 2010-04-22 Nikon Corp Method for manufacturing liquid crystal display and exposure apparatus

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