JPH05332956A - X-ray analizer - Google Patents

Abstract

PURPOSE:To accurately control the tilt angle of a sample, referring to an X-ray analizer in which X-rays are incident at a small angle on a sample surface. CONSTITUTION:An analizer for emitting two incident X-ray beams 3 of slit- shaped sections on a surface 1a to be measured comprises the following parts and means: a slit 8 having an opening 8a for demarcating an incident X-ray beam 3; a very shall X-ray source 10 removably provided before the slit 8 on the center line thereof: a beam splitter 9 having two slit-shaped openings 9a and for splitting diverging X-rays from the source 10 into two X-ray beams 14a, 14b used for adjustment in two directions; a sample base 2 having a means for moving a sample 1 vertically to the surface 1a, a means for rotating the surface 1a around the theta-rotation shaft 2b perpendicular to the normal of the surface 1a and to the incident X-ray beam 3, and a means for rotating the surface 1a around the tilt rotation shaft 2b perpendicular to the normal of the surface 1a and the shaft 2a; and a means for detecting the X-ray beams 14a, 14b reflected or diffracted by the surface 1a, and for adjusting the tilt rotation so that the dependency of the intensities thereof on the theta-rotation agree with each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray analyzer capable of accurately setting the angle and position of a sample with respect to an X-ray incident on the sample surface at a small angle.

When the incident angle of X-rays on the sample surface is small,
Especially when the incident angle is small enough to satisfy the condition of total internal reflection,
The incident X-ray irradiates only the sample surface and hardly penetrates inside. Therefore, under the condition of a small incident angle, when scattered X-rays, fluorescent X-rays or photoelectrons radiated from the sample surface are observed, the generation of X-rays and photoelectrons from the inside of the sample which become noise is extremely small. The surface can be observed with a high S / N ratio.

As described above, the X-ray analyzer for making the X-ray incident on the surface of the sample at a small incident angle can sensitively analyze the structure or composition of the surface of the substrate. Therefore, X-ray diffraction, X-ray scattering, and fluorescent X
Widely used for surface analysis using line analysis and photoelectron spectroscopy.

However, since the X-ray incidence angle on the sample surface is small, the X-ray irradiation region is largely moved by a slight variation in the sample angle or position. Therefore, it is necessary to precisely set the sample at an accurate angle and position in order to accurately irradiate the region to be analyzed with X-rays.

[0005]

2. Description of the Related Art In a conventional X-ray analyzer, a sample is aligned with an incident X-ray beam as follows.

FIG. 4 is a perspective explanatory view of a conventional device,
The relationship between the sample and the optical system when the sample is aligned in the X-ray analyzer is shown. The synchrotron orbit radiated light 13a (hereinafter referred to as SOR light) monochromated through the monochromator is widened by a collimator 8 having a slit-shaped opening 8a, for example, a thin beam having a width of 20 mm,
The incident X-ray beam 3 has a rectangular shape with a height of 0.2 mm.

The silicon wafer of sample 1 is the surface to be measured 1
It is placed on a sample stage (not shown) so that a is almost parallel to the incident X-ray beam 3. This sample stand
Means for precisely moving the sample placed thereon in a direction perpendicular to the surface 1a to be measured (hereinafter referred to as z-axis direction), a direction orthogonal to the z-axis and the incident direction of the incident X-ray beam 3, That is, rotation (hereinafter referred to as θ rotation) means about the width direction of the incident beam 3 (hereinafter referred to as x-axis direction) as an axis,
Rotation (hereinafter referred to as tilt rotation) means having a direction orthogonal to the z-axis and the x-axis (hereinafter referred to as y-axis) as an axis.

The directions of the x, y, and z axes are selected so as to form a right-handed system, the z axis is positive in the direction from the surface to be measured to the outside of the wafer, and the y axis is of the incident X-ray beam 3. The direction in which the incident direction vector has a positive y component is positive.

In the procedure of aligning the sample 1 in the conventional apparatus, first, the collimator 8 is installed at the center position of the SOR light 13a to define the incident X-ray beam 3. Next, sample 1
Is moved along the z-axis, half of the incident X-ray beam 3 is shielded by the sample 1, and the other half is set at a position where it becomes the passing X-ray beam 3a passing on the measured surface 1a of the sample. .. Then, the θ rotation and tilt rotation of sample 1 are transmitted through X
The intensity of the line beam 3a is set to be maximum.

Further, the above-mentioned movement of the z-axis, θ rotation and tilt rotation are repeatedly adjusted to complete the adjustment of the position and angle of the sample. In such adjustment of the X-ray analyzer, if the adjustment of the tilt rotation is incomplete, there arises a disadvantage that the measured region to be measured and the X-ray irradiation region are displaced as described below.

FIG. 5 is an explanatory view of a conventional embodiment, and shows an X-ray irradiation region when the tilt rotation adjustment of the X-ray analyzer is incomplete. Here, FIG. 5A is a plan view and FIG.
(B) is a cross-sectional view thereof, in which the cross section of Iro is shown by a solid line and the cross section of Hani is shown by a broken line.

When the tilt angle is completely adjusted, the irradiation area 1c irradiated by the incident X-ray beam 3 is as shown in FIG.
, And the rectangular measured area 1b, which is the area to be originally measured, coincides.

However, when the tilt angle is deviated, the sample surface at the Hani cross section located at the end of the incident X-ray beam 3 has an incident X-ray beam 3 as shown by a broken line in FIG. 5B. The sample surface in the cross section located at the center of is shifted in the positive direction of the z axis, for example.

Therefore, at the end of the incident X-ray beam 3, the irradiation area 1c is displaced to the incident beam side, for example.
As a result, as shown in FIG. 5A, the X-ray irradiation area 1c is 2
A rectangular parallelepiped measurement area 1b having parallelograms with diagonal sides
Since it does not match, the measurement accuracy deteriorates.

For example, the incident angle θ is 0.3 degrees and the beam width is 4
At 0 mm, an error in the tilt angle of 0.3 degrees causes a movement of the X-ray irradiation area of 20 mm at the end of the incident X-ray beam.
As described above, the adjustment accuracy of the tilt angle is directly related to the superiority and inferiority of the surface analysis accuracy, and therefore it needs to be adjusted precisely. However, in the conventional device, the adjustment depends on the measurement accuracy of the change in the intensity of the incident beam, and thus precise adjustment is difficult.

[0016]

As described above, the conventional X-ray analyzer cannot precisely adjust the tilt angle of the sample with respect to the incident beam.
There is a problem that it is difficult to match the line irradiation area with each other, and precise surface analysis cannot be performed.

According to the present invention, the tilt angle of the sample with respect to the incident beam can be precisely adjusted by setting the tilt angle so that the two X-rays diverging from one point simultaneously satisfy the total reflection condition or the diffraction condition. It is an object of the present invention to provide an X-ray analysis device that can be used.

[0018]

FIG. 1 is a block diagram of an embodiment of the present invention, showing the main structure of an X-ray analysis apparatus.
1A is a vertical cross section including the center line of the incident X-ray beam, and FIG. 1B is along the incident and reflected X-ray beams.
It shows a cross section of a plane perpendicular to the vertical cross section.

In order to solve the above-mentioned problems, the first structure of the present invention refers to FIG. 1 in which a sample 1 having a flat surface 1a to be measured is incident on a partial region within the surface 1a to be measured. The X-rays or electrons 5 emitted from the surface of the sample 1 are measured by irradiating an incident X-ray beam 3 having a slit-shaped cross section orthogonal to the direction and having the azimuth included in the measured surface 1a as the long side direction. In the X-ray analysis device for observing with the detector 4 for
A slit 8 having an opening 8a for defining the cross-sectional shape of the incident X-ray beam 3 for extracting the incident X-ray beam 3 from the X-ray 13 incident from the front of the line analyzer, and the incident in front of the slit 8. A micro X-ray source 10 that is detachably provided on the extension of the center line of the X-ray beam 3 and generates divergent X-rays.
And in a plane parallel to the slit 8 and the slit 8
Slit-shaped openings 9a orthogonal to the long sides of the openings 8a
By passing the divergent X-rays generated from the minute X-ray source 10 through the slit 8 and the two slit-shaped openings 9a, a part of the divergent X-rays is transmitted through the center line of the incident X-ray beam 3. And a detachable beam splitter 9 for taking out as two adjusting X-ray beams 14a and 14b which are emitted in two symmetrical directions with respect to a plane parallel to the two slit-shaped openings 9a. And holding the sample 1,
Means for moving the sample 1 in a direction perpendicular to the measured surface 1a,
The incident X-ray beam 3 is orthogonal to the perpendicular of the surface to be measured 1a and
Has a means for rotating about a θ rotation axis 2a orthogonal to the incident direction, and a means for rotating about a tilt rotation axis 2b orthogonal to the perpendicular of the measured surface 1a and orthogonal to the θ rotation axis 2a. Sample stage 2 and attachment / detachment for detecting the incident X-ray beam 3 and the divergent X-ray that have passed through the slit 8 and the beam splitter 9 for adjusting the positions of the slit 8 and the minute X-ray source 10. A freely provided first X-ray detector 6 and two adjusting X-ray beams 14a and 14b reflected or diffracted from the measured surface 1a after being incident on the measured surface 1a, respectively. Second and third X-ray detectors 7a and 7b for detection, and the second and third X-ray detectors 7
a rotation axis 2a of the sample 1 of X-ray intensity detected by a and 7b
Observing the rotation angle dependency around the rotation angle, so that the rotation angle dependency around the θ rotation axis 2a of the sample 1 of the X-ray intensity detected by the second and third X-ray detectors 7a, 7b becomes the same. To the sample 1
Of the micro X-ray source 10 fixed to the X-ray analysis apparatus of the first construction. Is used as the X-ray source of the incident X-ray beam 3, and the third configuration is the X-ray analysis apparatus of the first configuration, in which X is incident from the front of the X-ray analysis apparatus. A detachable secondary source collimator 11 that allows a part of the line 13 to pass therethrough, and X-rays that have passed through the secondary source collimator 11 are irradiated with fluorescence X from the surface opposite to the irradiation surface. A target thin film 12 for generating a line,
The fluorescent X-rays generated from the target thin film 12 are used as the minute X-ray source 10.

[0020]

In the structure of the present invention, referring to FIG. 1, the incident X-ray beam 3 is defined by the X-rays emitted from the minute X-ray source 10 placed on the center line extension of the incident X-ray beam 3. Two adjusting X-ray beams 14a, 14
Take out b.

Therefore, the two adjusting X-ray beams 14a,
14 b is in the same plane as the incident X-ray beam 3 defined by the slit 8. Further, the two adjusting X-ray beams 14a and 14b are two slit-shaped apertures 9a and 9b of the beam splitter 9 which are opened equidistantly from the center of the incident X-ray beam 3 in the width direction of the incident X-ray beam 3. It is separated and shaped by passing through.

Therefore, the two adjusting X-ray beams 14a,
14 b is emitted symmetrically with respect to the center line of the incident X-ray beam 3, and is incident on the measured surface 1 a of the sample 1. That is, the adjustment X-ray beams 14a and 14b are composed of two beams that diverge symmetrically in the same plane as the incident X-ray beam and are incident on the measured surface 1a.

The first X-ray detector 6 is for adjusting the position of the slit 8 and the position of the minute X-ray source 10, and these positions are usually the incident X-ray beam 3 or the minute X-ray. The X-ray intensity from the source 10 is adjusted to be maximum. After adjustment, remove from the optical system.

Next, 2 incident on the measured surface 1a of the sample 1
The adjusting X-ray beams 14a and 14b of the book are the measured surface 1a.
Is reflected or diffracted by the X-ray detector, and the intensities of the X-ray detectors 7a and 7b are separately measured and recorded.

The reflected or diffracted intensity is measured by the measured surface 1a.
And the incident angle between the incident X-rays. In particular, when the incident angle is in the vicinity of the critical angle causing the total reflection of X-rays or the angle satisfying the diffraction condition, the dependency of the reflection or diffraction intensity on the incident angle is remarkable.

In the apparatus according to the present invention, the incident angle dependency of the reflection and diffraction intensities of the two adjusting X-ray beams 14a and 14b is measured by changing the incident angle by rotating the sample table 2 by θ. From the result, the tilt rotation angle of the sample table 2 is adjusted so that the reflection and diffraction intensities of these two adjustment X-ray beams 14a and 14b are matched.

When the reflection and diffraction intensities match, the measured surface 1a has an accurate tilt angle with respect to the incident X-ray beam 3, as will be described in detail below. Therefore, with this device, accurate setting of the sample can be easily performed.

From the dependency of the reflection and diffraction intensities on the incident angle, an extremely small difference in incident angle, for example, a difference of several tens of seconds can be easily detected. The tilt angle is adjusted very precisely.

Hereinafter, a method of adjusting the tilt angle based on the incident angle dependence of the reflection and diffraction intensities of the above two adjustment X-ray beams, and the tilt rotation angle of the sample table so that the reflection and the diffraction intensities are matched. The principle of precise adjustment of the tilt angle of the surface to be measured will be explained.

FIG. 2 is an explanatory view of the principle of the present invention.
2A shows the angle and positional relationship between the two adjustment X-ray beams and the surface to be measured, and FIG. 2B shows the coordinate axes of FIG. 2A.

Referring to FIG. 2 (b), the coordinate axes are at the origin O.
Is set as described above. That is, the incident direction 20 of the incident X-ray beam is in the yz plane, and the x axis and the y axis coincide with the θ rotation axis and the tilt rotation axis, respectively.

The completely adjusted surface 1a ₀ to be measured is xy
Located in the plane, the unit normal vector n ₀ is the z-axis direction. The measured surface 1a to be adjusted has a y-axis as a rotation axis,
That is, it is assumed that the inclination is α around the rotation axis. At this time, the unit normal vector n of the surface to be measured 1a is inclined α from the unit normal vector n ₀ of the adjusted measured surface 1a ₀ in zx plane.

As shown in FIG. 2A, the minute X-ray source 10 is located at a point S on the second quadrant in the yz plane, and has a perpendicular line from the point S to the y axis and a negative y axis. Intersect at point L. Adjustment X
The line beams 14a and 14b are emitted from the point S and intersect the perfectly adjusted surface to be measured at points A and B respectively on the x-axis.

[0034] When the tilt angle of the surface to be measured is inclined only from the z-axis alpha, adjusting the X-ray beam 14a, 14b and the intersection between the surface to be measured is moved to the respective points A ^'and point ^B'.
Therefore, the adjustment X-ray beam 14 incident on the measured surface 1a
a, 14b respectively an incident angle _of, when the theta _A, theta _B,

[0035]

[Equation 1] sin θ _A = −vector n · unit vector SA ^′ ,

[0036]

[Equation 2] sin θ _B = −vector n · unit vector SB ^′ ,
Is. Here, the unit vector SA ^' and the unit vector SB ^' are the vector SA from the point S toward the point A ^' and the point B ^' , respectively.
It is a unit vector of ^' , vector SB ^' .

On the other hand, referring to FIG.

[0038]

[Formula 3] Vector SA = vector SO + vector OA,

[0039]

## EQU00004 ## Vector SB = vector SO + vector OB. Here, the vector SO is a vector from the point S to the point O, and the vectors OA and OB are vectors from the point O to the points A and B, respectively.

Vector SA and vector SA ^' or vector
Since SB and vector SB ^' have the same direction, their unit vectors are the same. Therefore, from Equations 3 and 4,

[0041]

[Equation 5] Unit vector SA ^' = Unit vector SA = = (Vector SO + Vector OA) / | Vector SA | = = cos χ · unit vector SO + sin χ · unit vector OA,

[0042]

[Formula 6] Unit vector SB ^′ = unit vector SB == (vector SO + vector OB) / | vector SB | == cos χ · unit vector SO + sin χ · unit vector OB.

Substituting equations (5) and (6) into equations (1) and (2) and setting a unit vector in the x direction as a unit vector x, vector n =
Considering cos α · vector n ₀ + sin α · unit vector x,

[0044]

[Equation 7] sin θ _A = cos χ · cos α · sin θ ₀ + sin χ · sin α

[0045]

[Equation 8] sin θ _B = cos χ · cos α · sin θ ₀ − sin χ · sin α where, vector n ₀ · unit vector SO = − sin θ ₀ ,
Vector n ₀ , unit vector x = vector n ₀ , unit vector OA = 0, and vector n, unit vector OA = −
sin α, vector n and unit vector OB = sin α were used.

Comparing equations (7) and (8), the incident angles θ _A and θ of the two adjusting X-ray beams 14a and 14b on the surface 1a to be measured are compared.
It is clear that _B agrees when the tilt angle α = 0, and otherwise the deviation of the incident angle corresponding to the term of 2 × sin χ · sin α occurs with the increase of the tilt angle α.

Therefore _{, when the} tilt angle adjustment is incomplete, the total reflection angle and the rotation angle observed when the sample is rotated by θ are based on the deviation of the incident angles of _the two adjustment X-ray beams 14a and 14b. precious _is observed apart angle substantially equal before and after the angle theta ₀ observed when fully adjusted.

FIG. 3 is an explanatory view of an embodiment of the present invention, showing the θ rotation angle dependence of the reflection intensity of the adjusting X-ray beam, and the total reflection when the tilt angle is deviated by 0.3 degrees. It is a calculation example showing the difference in the θ angle dependence near the angle.

The curves indicated by 14a and 14b in FIG.
The respective reflection intensities of the adjustment X-ray beams 14a and 14b are shown. Here, the critical angle of the total reflection angle was set to 0.3 °, and the spread angle χ of the adjustment X-ray beam was set to 5.7 °.

It can be seen from FIG. 3 that the difference in the reflection intensities of the two adjustment X-ray beams due to the poor tilt angle adjustment is clearly observed, and that the tilt angle can be measured with an accuracy of about 1/100 degree.

[0051] _Therefore, the two adjusting X-ray beam 14a that is observed the sample is rotated theta, total reflection angle _14b, or the diffraction angle _measured, the tilt angle to be adjusted from them and several 7,8 The direction and size of can be calculated.

For example, θ _A = θ ₀ + Δθ _A , θ _B = θ ₀
+ Δθ _B , and from Equations 7 and 8, Δθ _B −Δθ _A ≈−2
Get sin χ · sin α. Since Δθ _B and Δθ _A are almost equal, the tilt angle to be adjusted is α ≈ sin ^-1 ((Δθ _A −Δθ
_B ) / 2sin χ)

By rotating this angle by θ to correct the tilt angle, the tilt angle of the sample is accurately adjusted. Since the total reflection angle and the diffraction angle can be easily measured in the order of 1/100 degree, the tilt angle to be adjusted is also 1
It can be obtained with an accuracy of about / 100 degrees.

Therefore, according to the present invention, the tilt angle can be precisely adjusted. The second and third configurations of the present invention are
It relates to a micro X-ray source. In the second configuration, the micro X-ray tube used for generating X-rays for measurement is directly used as the micro X-ray source according to the configuration of the present invention, and no special device is required as the micro X-ray source. Since no special adjustment for setting is required, the device can be easily manufactured.

In the third structure, fluorescent X-rays are generated by irradiating a part of the incident X-rays on the aperture target thin film, and this is used as a minute X-ray source. Since the target thin film is thin, fluorescent X-rays can be generated from the back surface.

In this configuration, the shape and position of the minute X-ray source is determined by the collimator 11 for the secondary radiation source which narrows down a part of the incident X-ray, so that the setting is facilitated. Moreover, there is an effect that fluorescent X-rays of an arbitrary substance can be easily generated by exchanging the target thin film.

Furthermore, since no special X-ray generator is required, the device is simple.

[0058]

EXAMPLES The present invention will be described with reference to examples. Figure 1
Referring to, X-rays having a synchrotron orbital radiation (SOR light) monochromated through a monochromator as an X-ray source, for example, X-rays having a wavelength of about 0.1 nm are incident as a horizontal belt-like beam from the front of the apparatus. And

This X-ray is made into an incident X-ray beam 3 by passing through a slit 8 which limits the height. That is, the width of the incident X-ray beam is defined by the width of the X-ray 13 incident from the front, and the height is defined by the opening 8a of the slit 8. The cross-sectional shape of such an incident X-ray beam 3 is, for example, 40 mm in width,
The height is 0.1 mm.

The sample 1 is finely moved in the vertical direction, and is placed on the sample table 2 whose axis parallel to the incident beam 3 is the tilt rotation axis 2b and whose horizontal axis perpendicular to the incident beam 3 is the θ rotation axis 2a.
The position and azimuth of the sample 1 are adjusted in the same manner as the conventional sample adjustment method described above.

The sample is, for example, 10 behind the slit 8.
It is placed at the 0 mm position. Next, a collimator 11 for a secondary radiation source having a rectangular opening with a width of 10 mm and a height of 0.1 mm is inserted in the center line of the incident X-ray beam 3, and the position is located near the rear and 100 mm in front of the slit 8. For example, a thin film of iron having a thickness of 0.1 mm is inserted as the target thin film 12.
Therefore, the collimator 1 for the secondary radiation source of the target thin film 12
The part excited by the X-ray passing through 1, such as a width of 10 mm,
A rectangular portion having a height of 0.1 mm serves as a micro X-ray source 10 that emits fluorescent X-rays of Fe. At this time, the X-ray detector 2 used for adjusting the incident X-ray beam 3 may be placed on the incident X-ray beam line to adjust the vertical position of the secondary source collimator 11.

Next, the X-ray detector 2 is removed and the beam splitter 9 and the adjustment beams 14a and 14b are detected by X.
The line detectors 7a and 7b are arranged. This beam splitter 9 is usually placed near the slit 8 and mostly behind it, and for example, slit-shaped openings 9a having a width of 10 mm and a height of 20 mm are provided 10 mm apart from the center of the incident X-ray beam 3 in the horizontal direction. ing.

With this arrangement, two adjustment X-ray beams 14a and 14b for irradiating the measured surface 1a of the sample 1 from the minute X-ray source 10 on the target thin film 12 are formed.
The adjusting X-ray beams 14a and 14b diverge at an angle of 2χ = 11.4 ° in the above case.

Then, the X-ray beam 14 for adjustment is rotated by θ.
The reflection intensity of a and 14b is measured, the θ angle at which the reflection intensity becomes half of the incident intensity is obtained, and from this, the magnitude and direction of the tilt angle α to be adjusted are calculated according to the equations 7 and 8, and
Adjust to correct the tilt angle.

After the adjustment, the collimator 11 for the secondary radiation source, the target thin film 12, the beam splitter 9, and the X-ray detectors 7a and 7b are removed from the incident X-ray beam 3 and a normal X-ray surface analysis is performed.

[0066]

According to the present invention, since the tilt angle of the surface to be measured can be precisely set, the region to be measured can be accurately irradiated with X-rays, and precise surface analysis can be performed. Since it is possible to realize an X-ray analyzer capable of performing the above, it greatly contributes to the performance improvement of the surface analyzer.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

FIG. 2 is an explanatory diagram of the principle of the present invention.

FIG. 3 is an explanatory diagram of an embodiment of the present invention.

FIG. 4 is a perspective explanatory view of a conventional device.

FIG. 5 is an explanatory diagram of a conventional example.

[Explanation of symbols]

 1 sample 1a measured surface 1b measured area 1c X-ray irradiation area 2 sample stage 2a θ rotation axis 2b tilt rotation axis 3 incident X-ray beam 3b reflected X-ray beam 4 measurement detector 5 X-ray or electron 6,7a, 7b X-ray detector 8 Slit 8a Aperture 9 Beam splitter 9a Slit-like aperture 10 Micro X-ray source 11 Target for secondary radiation source 12 Target thin film 13 X-ray incident from the front 13a SOR light 14a, 14b Adjustment X-ray beam 20 Incident direction of incident X-ray beam

Claims (3)

[Claims] 1. A sample (1) having a flat surface to be measured (1a), which is included in the surface to be measured (1a) orthogonal to the incident direction in a partial region in the surface to be measured (1a). X is emitted from the surface of the sample (1) by irradiating it with an incident X-ray beam (3) having a slit-shaped cross section whose direction is the long side direction.
In order to extract the incident X-ray beam (3) from the X-rays (13) incident from the front of the X-ray analysis device in an X-ray analysis device for observing a ray or an electron (5) by a measuring detector (4) A slit (8) having an opening (8a) defining the cross-sectional shape of the incident X-ray beam (3), and attached to and detached from the slit in front of the slit (8) along the center line extension of the incident X-ray beam (3). A micro X-ray source (10) that is freely provided to generate divergent X-rays and is in a plane parallel to the slit (8),
The slit (8) has two slit-shaped openings (9a) orthogonal to the long side of the opening (8a), and the micro X-ray source (1
0) from the slit (8) and the divergent X-rays
By passing through the two slit-shaped apertures (9a), a plane containing a part of the divergent X-rays including the center line of the incident X-ray beam (3) and parallel to the two slit-shaped apertures (9a) is a symmetry plane. And a beam splitter (9) which is detachably provided for taking out as two adjustment X-ray beams (14a, 14b) emitted in two symmetrical directions and holding the sample (1). A means for moving (1) in the direction perpendicular to the surface to be measured (1a), a θ rotation axis (which is orthogonal to the perpendicular to the surface to be measured (1a) and orthogonal to the incident direction of the incident X-ray beam (3) ( 2a) rotating means, and the surface to be measured (1
a), a sample stage (2) having means for rotating around a tilt rotation axis (2b) orthogonal to the perpendicular of (a) and orthogonal to the θ rotation axis (2a), the slit (8) and the minute X-ray Removably provided to detect the incident X-ray beam (3) and the divergent X-rays that have passed through the slit (8) and the beam splitter (9) to adjust the position of the source (10). First X-ray detector (6) and the surface to be measured (1a)
Second and third X-ray detectors (7a, 7) for respectively detecting the two adjusting X-ray beams (14a, 14b) reflected or diffracted from the measured surface (1a) after being incident on
b) and the dependence of the X-ray intensity detected by the second and third X-ray detectors (7a, 7b) on the rotation angle around the θ rotation axis (2a) of the sample (1), The X-ray intensities detected by the second and third X-ray detectors (7a, 7b) have the same rotation angle dependency around the θ rotation axis (2a) of the sample (1). ) Is rotated around the tilt rotation axis (2b). 2. The X-ray analysis apparatus according to claim 1,
An X-ray analysis apparatus, characterized in that the micro X-ray source (10) fixed to the apparatus is used as an X-ray source of the incident X-ray beam (3). 3. The X-ray analysis apparatus according to claim 1,
A detachable secondary source collimator (11) that allows a part of the X-rays (13) incident from the front of the X-ray analyzer to pass therethrough, and passes through the secondary source collimator (11) And a target thin film (12) that emits fluorescent X-rays from the surface opposite to the irradiation surface, and emits the fluorescent X-rays generated from the target thin film (12) by the micro X-ray source. (10) An X-ray analysis device characterized by the above.