JPH05331424A - Film adhesive - Google Patents

Film adhesive

Info

Publication number
JPH05331424A
JPH05331424A JP14418292A JP14418292A JPH05331424A JP H05331424 A JPH05331424 A JP H05331424A JP 14418292 A JP14418292 A JP 14418292A JP 14418292 A JP14418292 A JP 14418292A JP H05331424 A JPH05331424 A JP H05331424A
Authority
JP
Japan
Prior art keywords
bis
film
adhesive
aminophenoxy
polyimide resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14418292A
Other languages
Japanese (ja)
Inventor
Yoshitaka Okugawa
良隆 奥川
Tatsuhiro Yoshida
達弘 吉田
Toshio Suzuki
敏夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP14418292A priority Critical patent/JPH05331424A/en
Publication of JPH05331424A publication Critical patent/JPH05331424A/en
Pending legal-status Critical Current

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  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PURPOSE:To provide the film adhesive containing a polyimide resin having a specific structure as a main component, excellent in low water absorption, heat resistance and adhesive force to silicon substrates and metals, capable of adhering at a low temperature in a short time, and suitable as a material for mounting semiconductors. CONSTITUTION:The film adhesive is produced by applying an adhesive to the surface of a film, the adhesive containing an imide resin as a main component. The imide resin is produced by reacting (A) 3,3',4,4'-(diphenyl sulfone) tetracarboxylic dianhydride of formula I, (B) an arbitrary other acid component (e.g. a dicarboxylic acid such as phthalic anhydride), (C) bis-4-(aminophenoxy)phenyl sulfone of formula II [preferably bis-4-(4- aminophenoxy)phenyl sulfone], (D) alpha,omega-bis(3-aminopropyl)polydimethylsiloxane of formula III, and (E) an arbitrary other amine component (e.g. p- phenylenediamine) in ratios of A/(A+B)>=0.7, (C+D)/(C+D+E)>=0.7 and 0.5>=D/(C+D+E)>=0.05 and subsequently subjecting the reaction product to an imide ring-closing reaction.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、低吸水性と耐熱性に優
れたエレクトロニクス用途、特に半導体実装材料として
適したシリコン基板や金属に対する接着力が優れ、低温
短時間で接着可能なフィルム接着剤に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film adhesive which has low water absorption and excellent heat resistance, and is particularly suitable for use as a semiconductor mounting material for a silicon substrate or a metal, and has excellent adhesive strength to a low temperature and a short time. It is about.

【0002】[0002]

【従来の技術】近年、半導体チップが高機能大容量化に
よって大型化する一方、パッケージの大きさはプリント
回路設計上の制約、電子機器小型化の要求などから従来
と変わらない、あるいはむしろ小さな外形を要求されて
いる。この傾向に対応して半導体チップの高密度化と高
密度実装に対応した新しい実装方式が幾つか提案されて
いる。一つはメモリー素子に提案されているダイ・パッ
ドのないリードフレームの上にチップを載せるCOL
(チップ・オン・リード)構造とその発展形であるチッ
プの上にリードを載せるLOC(リード・オン・チッ
プ)構造である。一方論理素子には電源、グランドを別
フレームにし、さらに放熱のための金属プレートを多層
化した多層リードフレーム構造がある。これらによると
チップ内配線やワイヤー・ボンディングの合理化、配線
短縮による信号高速化、消費電力の増大に伴って発生す
る熱の放散等と素子サイズの小型化を図ることができ
る。
2. Description of the Related Art In recent years, while semiconductor chips have become larger due to higher functionality and larger capacity, the size of the package has not changed from the conventional one due to restrictions on printed circuit design, demand for miniaturization of electronic equipment, or rather a small external shape. Is being requested. In response to this tendency, some new mounting methods have been proposed to cope with high density and high density mounting of semiconductor chips. One is a COL that puts a chip on a lead frame without a die pad proposed for a memory device.
(Chip-on-lead) structure and its developed form are LOC (lead-on-chip) structure in which leads are mounted on a chip. On the other hand, the logic element has a multi-layered lead frame structure in which a power source and a ground are provided in different frames and a metal plate for heat dissipation is multi-layered. According to these, it is possible to rationalize the wiring in the chip and wire bonding, to speed up the signal by shortening the wiring, to dissipate heat generated due to the increase in power consumption, and to reduce the element size.

【0003】この新しい実装形態では、半導体チップと
リードフレーム、リードフレームとプレート、リードフ
レーム同士など同種異種材質の接着界面が存在し、その
接着信頼性が素子の信頼性に非常に大きな影響を与え
る。素子組立作業時の工程温度に耐える信頼性は勿論の
こと、吸湿時、湿熱時などの接着信頼性である。さらに
接着作業性も重要な項目である。
In this new mounting mode, there are bonding interfaces of the same kind and different materials such as a semiconductor chip and a lead frame, a lead frame and a plate, and lead frames, and the bonding reliability greatly affects the reliability of the device. .. Not only the reliability of withstanding the process temperature at the time of assembling the element, but also the reliability of adhesion at the time of absorbing moisture, heat of heat and the like. Further, the workability of bonding is also an important item.

【0004】従来、これらの接着にはペースト状の接着
剤や耐熱性基材に接着剤を塗布したものが使用されてい
た。エポキシ樹脂系、アクリル樹脂系、ゴム−フェノー
ル樹脂系の熱硬化性樹脂が接着剤として使用されている
が、イオン性不純物が多い、加熱硬化に高温長時間を必
要とし生産性が悪い、加熱硬化時に多量の揮発分が発生
しリードを汚染する、吸湿性が高い、など高信頼性接着
剤としての要求を満たしているとは言い難く、満足でき
る材料が見当らない。
Conventionally, a paste-like adhesive or a heat-resistant base material coated with an adhesive has been used for these adhesions. Epoxy resin type, acrylic resin type, rubber-phenol resin type thermosetting resin is used as adhesive, but there are many ionic impurities, heat curing requires high temperature and long time, productivity is poor, heat curing It is hard to say that the requirements for a highly reliable adhesive such as a large amount of volatile components that contaminate leads and high hygroscopicity are satisfied, and no satisfactory material is found.

【0005】一方、耐熱性の熱圧着可能なフィルム接着
剤についてはいくつか知られており、例えば、特開平1-
282283号公報には、ポリアミドイミド系やポリアミド系
のホットメルト接着剤、特開昭58-157190号公報には、
ポリイミド系接着剤によるフレキシブル印刷回路基板の
製造法、特開昭62-235382号、特開昭62-235383号及び特
開平2-15663号公報には、熱硬化性のポリイミド系フィ
ルム接着剤に関する記述がなされている。ところが、ポ
リアミド系やポリアミドイミド系樹脂は、アミド基の親
水性のために吸水率が大きくなるという欠点を有し、信
頼性を必要とするエレクトロニクス用途としての接着剤
に用いるには限界があった。また熱硬化性のポリイミド
系フィルム接着剤は、熱圧着条件が、275℃、50kgf/cm
2、30分間であったり、半硬化状態のものを高温で長時
間硬化させたりすることが必要で、また硬化時に縮合水
が発生するなど、熱や圧力、水の影響などに鋭敏な電子
部品や、量産性を必要とされる用途のフィルム接着剤と
しては充分なものとはいえなかった。このような理由
で、新しい実装形態に適した接着剤の開発が求められて
いる。
On the other hand, several heat-resistant thermocompression-bondable film adhesives are known, for example, Japanese Patent Laid-Open No.
282283 discloses a polyamide-imide-based or polyamide-based hot-melt adhesive, and JP-A-58-157190 discloses a hot-melt adhesive.
A method for manufacturing a flexible printed circuit board using a polyimide adhesive, JP-A-62-235382, JP-A-62-235383 and JP-A-2-15663, describes a thermosetting polyimide film adhesive. Has been done. However, polyamide-based and polyamide-imide-based resins have a drawback that the water absorption rate becomes large due to the hydrophilicity of the amide group, and there is a limit in using them as adhesives for electronic applications requiring reliability. .. In addition, thermosetting polyimide film adhesives have a thermocompression bonding condition of 275 ° C and 50 kgf / cm.
2 , Electronic components that are sensitive to heat, pressure, water, etc., such as needing to be cured for 30 minutes or a semi-cured state at high temperature for a long time, and condensation water being generated during curing In addition, it cannot be said to be sufficient as a film adhesive for applications requiring mass productivity. For these reasons, there is a demand for the development of adhesives suitable for new mounting forms.

【0006】[0006]

【発明が解決しようとする課題】本発明は、低温短時間
で接着可能な低吸水性と耐熱性に優れたフィルム接着剤
を得るべく鋭意研究を重ねた結果、特定構造のポリイミ
ド樹脂が上記課題を解決することを見出し、本発明に到
達したものである。
DISCLOSURE OF INVENTION Problems to be Solved by the Invention In the present invention, as a result of intensive studies to obtain a film adhesive having low water absorption and excellent heat resistance, which can be bonded in a short time at a low temperature, a polyimide resin having a specific structure has the above problems. The present invention has been found to solve the above problems and has reached the present invention.

【0007】[0007]

【課題を解決するための手段】本発明は、3,3',4,4'-ジ
フェニルスルフォンテトラカルボン酸二無水物とビス-4
-(アミノフェノキシ)フェニルスルフォンおよびα,ω-
ビス(3-アミノプロピル)ポリジメチルシロキサンとを反
応させてイミド閉環せしめたポリイミド樹脂が主成分で
あるフィルム接着剤である。
The present invention is directed to 3,3 ', 4,4'-diphenylsulfone tetracarboxylic dianhydride and bis-4.
-(Aminophenoxy) phenyl sulfone and α, ω-
A film adhesive containing a polyimide resin as a main component, which is reacted with bis (3-aminopropyl) polydimethylsiloxane to cause imide ring closure.

【0008】本発明のポリイミド樹脂を得るのに用いる
3,3',4,4'-ジフェニルスルフォンテトラカルボン二無水
物(以下DSDAと略す)は式(1)、ビス-4-(アミノ
フェノキシ)フェニルスルフォンは式(2)、α,ω-ビ
ス(3-アミノプロピル)ポリジメチルシロキサン(以下A
PPSと略す)は式(3)で表わされるものである。式
(2)で表されるアミンは、アミノ基の置換位置により
ビス-4-(4-アミノフェノキシ)フェニルスルフォン(以
下BAPSと略す)とビス-4-(3-アミノフェノキシ)フ
ェニルスルフォン(以下BAPSMと略す)があり、耐
熱性の点からはBAPSの使用が好ましい。
Used to obtain the polyimide resin of the present invention
3,3 ′, 4,4′-diphenylsulfone tetracarboxylic dianhydride (hereinafter abbreviated as DSDA) has the formula (1), bis-4- (aminophenoxy) phenylsulfone has the formula (2), α, ω-bis (3-aminopropyl) polydimethylsiloxane (hereinafter A
(Abbreviated as PPS) is represented by formula (3). The amine represented by the formula (2) includes bis-4- (4-aminophenoxy) phenyl sulfone (hereinafter abbreviated as BAPS) and bis-4- (3-aminophenoxy) phenyl sulfone (hereinafter (Abbreviated as BAPSM), and BAPS is preferably used from the viewpoint of heat resistance.

【0009】[0009]

【化1】 [Chemical 1]

【化2】 [Chemical 2]

【化3】 [Chemical 3]

【0010】本発明では、上記DSDAと併用して3,
3',4,4'-ビフェニルテトラカルボン酸二無水物、3,3',
4,4'-ベンゾフェノンテトラカルボン酸二無水物、1,2,
4,5-ベンゼンテトラカルボン酸二無水物、4,4'-オキシ
ジフタル酸二無水物、2,2'-ビス(4-(3,4-ジカルボキシ
フェニル)フェニル)プロパン二無水物などのテトラカル
ボン酸二無水物、さらには分子量調節剤として無水フタ
ル酸などのジカルボン酸無水物を使用することができ
る。
In the present invention, in combination with the above DSDA,
3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3',
4,4'-benzophenone tetracarboxylic dianhydride, 1,2,
Tetra such as 4,5-benzenetetracarboxylic dianhydride, 4,4'-oxydiphthalic acid dianhydride and 2,2'-bis (4- (3,4-dicarboxyphenyl) phenyl) propane dianhydride Carboxylic dianhydrides and further dicarboxylic acid anhydrides such as phthalic anhydride can be used as a molecular weight modifier.

【0011】またα,ω-ビス(3-アミノプロピル)ポリジ
メチルシロキサン、BAPS、BAPSMと併用して、
例えば1,4-ビス(3-アミノフェノキシ)ベンゼン、1,3-ビ
ス(3-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノ
フェノキシ)ベンゼン、2,2-ビス(4-(4-アミノフェノキ
シ)フェニル)プロパン、4,4'-ジアミノジフェニルエー
テル、3,3'-ジアミノジフェニルエーテル、3,4'-ジアミ
ノジフェニルエーテル、4,4'-ジアミノジフェニルスル
フォン、3,3'-ジアミノジフェニルスルフォン、2,2-ビ
ス-4-アミノフェニルヘキサフルオロプロパン、2,2-ビ
ス-4-アミノフェノキシフェニルヘキサフルオロプロパ
ン、4,4'-ジアミノベンズアニリド、m-フェニレンジア
ミン、p-フェニレンジアミン、4,4'-ジアミノジフェニ
ルメタン、2,4-ジアミノトルエンなどのジアミンを使用
することができる。
Further, in combination with α, ω-bis (3-aminopropyl) polydimethylsiloxane, BAPS and BAPSM,
For example, 1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 2,2-bis (4- (4 -Aminophenoxy) phenyl) propane, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 2,2-bis-4-aminophenylhexafluoropropane, 2,2-bis-4-aminophenoxyphenylhexafluoropropane, 4,4'-diaminobenzanilide, m-phenylenediamine, p-phenylenediamine, 4, Diamines such as 4'-diaminodiphenylmethane and 2,4-diaminotoluene can be used.

【0012】本発明において、酸成分DSDAと、アミ
ン成分APPS、BAPS、BAPSMの各々のモル比
は、以下の各式の範囲にあることが重要である。[DS
DA]=aモル、[他の酸性分]=bモル、[BAP
S]+[BAPSM]=cモル、[APPS]=dモ
ル、[他のアミン成分]=eモルとすると a/(a+b)≧ 0.7 (c+d)/(c+d+e)≧ 0.7 0.5 ≧d/(c+d+e)≧ 0.05 モル比が上記の範囲にないと耐熱性が著しく劣る、ある
いはガラス転移温度が極めて低くなり高温時の特性が劣
化する、あるいは有機溶剤に対する溶解性が低下するな
ど、好ましくない。特に必須成分であるDSDAが酸成
分の70モル%より少ないと、得られるポリイミド樹脂が
有機溶剤に溶解しなくなり、またガラス転移温度が低く
なり接着作業性が著しく劣って好ましくない。またAP
PSが50モル%を越えると、今度は逆にガラス転移温度
が低くなり耐熱性が著しく劣るようになる。また、AP
PSが5モル%より少ないと、イミド化後、有機溶剤に
対する溶解力が劣り、被着剤への塗れが悪くなって短時
間での接着が困難になる等の現象が顕著となり、また吸
水率が1%以上と高くなるため、本発明の目的に適さな
い。
In the present invention, it is important that the molar ratio of each of the acid component DSDA and the amine components APPS, BAPS, BAPSM is within the range of each of the following formulas. [DS
DA] = amol, [other acidic components] = bmol, [BAP
S] + [BAPSM] = c mol, [APPS] = d mol, [other amine component] = e mol a / (a + b) ≧ 0.7 (c + d) / (c + d + e) ≧ 0.7 0.5 ≧ d / (c + d + e ) ≧ 0.05 When the molar ratio is not within the above range, the heat resistance is remarkably inferior, the glass transition temperature is extremely low and the characteristics at high temperature are deteriorated, or the solubility in an organic solvent is lowered, which is not preferable. Particularly, when DSDA, which is an essential component, is less than 70 mol% of the acid component, the obtained polyimide resin is not dissolved in an organic solvent, and the glass transition temperature becomes low, so that the bonding workability is remarkably deteriorated, which is not preferable. Also AP
When PS exceeds 50 mol%, on the contrary, the glass transition temperature becomes low and the heat resistance becomes remarkably poor. Also, AP
When PS is less than 5 mol%, the phenomenon that the solubility in an organic solvent is poor after imidization, the adhesion to an adherend becomes poor, and the adhesion in a short time becomes difficult, and the water absorption rate becomes remarkable. Is 1% or more, which is not suitable for the purpose of the present invention.

【0013】本発明で使用するAPPSは、式(3)に
おけるnの値が 0〜10 のものが好ましく、n=4〜10
のもの、あるいはn=0 とn=4〜10 のモノマーを混合
して用いることが特に接着性を重視する用途では好まし
い。
The APPS used in the present invention preferably has a value of n in the formula (3) of 0 to 10, and n = 4 to 10
Or a mixture of n = 0 and n = 4 to 10 monomers is preferably used especially in applications where importance is attached to adhesiveness.

【0014】重縮合反応における酸無水物成分とアミン
成分のモル比は、得られるポリアミック酸の分子量を決
定する重要な因子である。ポリマーの分子量と物性、特
に数平均分子量と機械的性質の間に相関があることは良
く知られている。数平均分子量が大きいほど機械的性質
が優れている。従って、接着剤として実用的に優れた強
度を得るためには、ある程度高分子量であることが必要
である。本発明では、酸成分とアミン成分の当量比rが 0.950 ≦ r ≦ 1.02 より好ましくは、 0.975 ≦
r ≦ 1.02 の範囲にあることが好ましい。ただし、r=[全酸成分
の当量数]/[全アミン成分の当量数]である。rが0.
950未満では、分子量が低くて脆くなるため接着力が弱
くなる。また1.02を越えると、未反応のカルボン酸が加
熱時に脱炭酸してガス発生、発泡の原因となり好ましく
ない。
The molar ratio of the acid anhydride component and the amine component in the polycondensation reaction is an important factor that determines the molecular weight of the polyamic acid obtained. It is well known that there is a correlation between the molecular weight and physical properties of polymers, especially the number average molecular weight and mechanical properties. The larger the number average molecular weight, the better the mechanical properties. Therefore, in order to obtain practically excellent strength as an adhesive, it is necessary to have a high molecular weight to some extent. In the present invention, the equivalent ratio r of the acid component and the amine component is more preferably 0.950 ≤ r ≤ 1.02, more preferably 0.975 ≤
It is preferably in the range of r ≤ 1.02. However, r = [equivalent number of all acid components] / [equivalent number of all amine components]. r is 0.
If it is less than 950, the molecular weight is low and it becomes brittle, so the adhesive strength becomes weak. On the other hand, when it exceeds 1.02, unreacted carboxylic acid is decarbonated during heating and causes gas generation and foaming, which is not preferable.

【0015】テトラカルボン酸二無水物とジアミンとの
反応は、非プロトン性極性溶媒中で公知の方法で行われ
る。非プロトン性極性溶媒は、N,N-ジメチルホルムアミ
ド(DMF)、N,N-ジメチルアセトアミド(DMA
C)、N-メチル-2-ピロリドン(NMP)、テトラヒド
ロフラン(THF)、ジグライム、シクロヘキサノン、
1,4-ジオキサンなどである。非プロトン性極性溶媒は、
一種類のみ用いてもよいし、二種類以上を混合して用い
てもよい。この時、上記非プロトン性極性溶媒と相溶性
がある非極性溶媒を混合して使用しても良い。トルエ
ン、キシレン、ソルベントナフサなどの芳香族炭化水素
が良く使用される。混合溶媒における非極性溶媒の割合
は、30重量%以下であることが好ましい。非極性溶媒が
30重量%以上では反応溶媒の溶解力が低下しポリアミッ
ク酸が析出する恐れがあるためである。
The reaction between the tetracarboxylic dianhydride and the diamine is carried out by a known method in an aprotic polar solvent. The aprotic polar solvent is N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMA
C), N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), diglyme, cyclohexanone,
1,4-dioxane and the like. The aprotic polar solvent is
Only one type may be used, or two or more types may be mixed and used. At this time, a non-polar solvent compatible with the aprotic polar solvent may be mixed and used. Aromatic hydrocarbons such as toluene, xylene and solvent naphtha are often used. The proportion of the nonpolar solvent in the mixed solvent is preferably 30% by weight or less. Non-polar solvent
This is because if the content is 30% by weight or more, the solubility of the reaction solvent may decrease and polyamic acid may precipitate.

【0016】このようにして得たポリアミック酸溶液を
続いて有機溶剤中で加熱脱水環化してイミド化しポリイ
ミドにする。イミド化反応によって生じた水は閉環反応
を妨害するため、水と相溶しない有機溶剤を系中に加え
て共沸させてディーン・スターク(Dean-Stark)管など
の装置を使用して系外に排出する。水と相溶しない有機
溶剤としてはジクロルベンゼンが知られているが、エレ
クトロニクス用としては塩素成分が混入する恐れがある
ので、好ましくは前記芳香族炭化水素を使用する。ま
た、イミド化反応の触媒として無水酢酸、β-ピコリ
ン、ピリジンなどの化合物を使用することは妨げない。
The polyamic acid solution thus obtained is subsequently heated and dehydrated in an organic solvent to form an imidized polyimide. Since the water generated by the imidization reaction interferes with the ring-closing reaction, an organic solvent that is incompatible with water is added to the system to azeotropically evaporate it and use a device such as a Dean-Stark tube to remove it from the system. To discharge. Dichlorobenzene is known as an organic solvent that is incompatible with water, but for electronics use, the aromatic hydrocarbon is preferably used because chlorine components may be mixed therein. Further, the use of compounds such as acetic anhydride, β-picoline and pyridine as a catalyst for the imidization reaction is not hindered.

【0017】本発明において、イミド閉環は程度が高い
ほど良く、イミド化率が低いと接着時の熱でイミド化が
起こり水が発生して好ましくないため、95%以上、より
好ましくは98%以上のイミド化率が達成されていること
が望ましい。
In the present invention, the higher the degree of imide ring closure, the better, and if the imidization rate is low, imidization occurs due to heat at the time of bonding and water is not generated, which is not preferable. Therefore, 95% or more, more preferably 98% or more. It is desirable that the imidization ratio of is achieved.

【0018】本発明では得られたポリイミド溶液はその
まま用いても良いが、該ポリイミド溶液を貧溶媒中に投
入してポリイミド樹脂を再沈析出させて未反応モノマを
取り除いて精製することが好ましい。精製、濾過、乾燥
したポリイミド樹脂は再び有機溶剤に溶解してワニスと
する。この時使用する溶剤は反応溶媒と同じでも良い
が、塗布乾燥工程の作業性を考え、沸点の低い、好まし
くは沸点が200℃以下の溶剤を選択することが好まし
い。200℃以下の溶剤として、本発明ではケトン系溶剤
としてアセトン、メチルエチルケトン、メチルイソブチ
ルケトン、シクロペンタノン、シクロヘキサノンを、エ
ーテル系溶剤として1,4-ジオキサン、テトラヒドロフラ
ン、ジグライムを挙げることができる。これらの溶剤は
単独で使用しても良いし、2種以上を混合して用いるこ
ともできる。アミド系溶剤のN,N-ジメチルホルムアミ
ド、N,N-ジメチルアセトアミドは沸点200℃以下である
が、ポリイミドとの相互作用が強く、乾燥には200℃以
上の高温を必要とし、また吸湿性が高いためワニス塗布
時にフィルムが白化するのでその使用は好ましくない。
In the present invention, the obtained polyimide solution may be used as it is, but it is preferable to introduce the polyimide solution into a poor solvent to reprecipitate and precipitate the polyimide resin to remove unreacted monomers for purification. The purified, filtered and dried polyimide resin is dissolved again in an organic solvent to form a varnish. The solvent used at this time may be the same as the reaction solvent, but it is preferable to select a solvent having a low boiling point, preferably a boiling point of 200 ° C. or less, in consideration of workability in the coating and drying step. In the present invention, examples of the solvent having a temperature of 200 ° C. or lower include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone and cyclohexanone as the ketone solvent, and 1,4-dioxane, tetrahydrofuran and diglyme as the ether solvent. These solvents may be used alone or in combination of two or more. The amide solvents N, N-dimethylformamide and N, N-dimethylacetamide have a boiling point of 200 ° C or less, but they have a strong interaction with polyimide and require a high temperature of 200 ° C or more for drying, and also have a hygroscopic property. Since it is high, the film is whitened when the varnish is applied, and therefore its use is not preferable.

【0019】ポリイミド樹脂ワニスには、表面平滑性を
出すための平滑剤、レベリング剤、脱泡剤などの各種添
加剤を必要に応じて添加することができる。また、溶剤
の蒸発速度を調節するために均一に溶解する範囲で芳香
族炭化水素系溶剤を使用することもできる。
If necessary, various additives such as a smoothing agent for providing surface smoothness, a leveling agent, and a defoaming agent can be added to the polyimide resin varnish. In addition, an aromatic hydrocarbon solvent may be used within the range where it is uniformly dissolved in order to control the evaporation rate of the solvent.

【0020】本発明において、ポリイミド樹脂をフィル
ム接着剤とするには、通常はポリイミド樹脂溶液(ワニ
ス)を流延あるいは塗布して得られ、例えば、ロールや
金属シート、ポリエステルシートなどの離型シートの上
にフローコーター、ロールコーターなどによりフィルム
を形成させ、加熱・乾燥後剥離してフィルム接着剤とし
たり、耐熱性フィルム基材を支持体として用い、その片
面又は両面に同様にフィルム層を形成させ、支持体と共
にフィルム接着剤とするなどの方法で得ることができ
る。
In the present invention, a polyimide resin film adhesive is usually obtained by casting or coating a polyimide resin solution (varnish). For example, a release sheet such as a roll, a metal sheet or a polyester sheet. A film is formed on top of it with a flow coater, roll coater, etc., and after heating and drying it is peeled off to form a film adhesive, or a heat-resistant film substrate is used as a support, and a film layer is similarly formed on one or both sides. And a film adhesive together with the support.

【0021】本発明において使用する耐熱性フィルム基
材は、ポリイミド樹脂フィルムが熱膨張係数が小さく温
度変化に対する寸法安定性に優れていること、可撓性に
富み取扱い易いこと、本発明の接着樹脂との密着力が優
れている点で好ましい。特に、ガラス転移温度が350℃
以上のポリイミド樹脂は、フィルム接着剤としての性能
と接着層であるポリイミド樹脂ワニスを塗布乾燥する工
程での作業性、安定性の点で優れている。
The heat-resistant film base material used in the present invention is that the polyimide resin film has a small coefficient of thermal expansion and is excellent in dimensional stability against temperature changes, is flexible and easy to handle, and the adhesive resin of the present invention. It is preferable in that it has excellent adhesion with. Especially glass transition temperature of 350 ℃
The above polyimide resin is excellent in performance as a film adhesive and workability and stability in the step of applying and drying a polyimide resin varnish as an adhesive layer.

【0022】接着ワニスの基材フィルムへの塗布乾燥
は、熱風乾燥炉とフローコーターやロールコーターを組
み合わせた装置などを用いることができる。ポリイミド
樹脂ワニスを塗工後、熱風乾燥炉に導きポリイミド樹脂
ワニスの溶剤を揮散させるに十分な温度と風量でもって
乾燥する。
For coating and drying the adhesive varnish on the substrate film, an apparatus combining a hot air drying furnace with a flow coater or roll coater can be used. After applying the polyimide resin varnish, the polyimide resin varnish is introduced into a hot air drying oven and dried at a temperature and an air volume sufficient to vaporize the solvent of the polyimide resin varnish.

【0023】本発明のフィルム接着剤の使用方法は特に
限定されるものではないが、所定の形状に切断して加熱
したヒートブロックで熱圧着して接着するなど、接着テ
ープとして使用することができる。
The method of using the film adhesive of the present invention is not particularly limited, but the film adhesive can be used as an adhesive tape by thermocompression bonding with a heat block that is cut into a predetermined shape and heated. ..

【0024】[0024]

【作用】本発明のフィルム接着剤は、低沸点の有機溶剤
に可溶である特定構造の完全にイミド化されたポリイミ
ド樹脂を主たる構成成分とすることを特徴とする。接着
剤のポリイミド樹脂は再沈精製することによって極めて
低いイオン性不純物レベルを達成できるとともに、低沸
点の溶剤を使用しイミド化されていることを合わせて加
熱時の発生ガスをほぼ完全に無くすことができる。
The film adhesive of the present invention is characterized in that the main component is a completely imidized polyimide resin having a specific structure which is soluble in an organic solvent having a low boiling point. By reprecipitating and refining the adhesive polyimide resin, it is possible to achieve extremely low levels of ionic impurities, and it is also possible to eliminate gas generated during heating almost completely by using imidization using a solvent with a low boiling point. You can

【0025】また、低吸水性と耐熱性に優れ、化学反応
を伴う熱硬化性接着剤に比べると極めて短時間に接着可
能である。テープ状に加工することにより、接着作業
性、接着部の寸法精度を優れたものにすることができ
る。以下実施例により本発明を詳細に説明するが、これ
らの実施例に限定されるものではない。
Further, it has low water absorption and excellent heat resistance, and can be bonded in an extremely short time as compared with a thermosetting adhesive which involves a chemical reaction. By processing into a tape shape, the workability of bonding and the dimensional accuracy of the bonded portion can be made excellent. Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.

【0026】[0026]

【実施例】【Example】

(実施例1)乾燥窒素ガス導入管、冷却器、温度計、撹
拌機を備えた四口フラスコに、脱水精製したNMP900
gとキシレン210gを入れ、窒素ガスを流しながら10分
間激しくかき混ぜる。次にBAPS 60.5503g(0.140
モル)とα,ω-ビス(3-アミノプロピル)ポリジメチルシ
ロキサン(APPS)43.5000g(平均分子量870、0.05
0モル)、ビス(3-アミノプロピル)テトラメチルジシロ
キサン(APPS,n=0)2.4852g(0.010モル)を投
入し、系を均一になるまでかき混ぜる。均一に溶解後、
系を氷水浴で5℃に冷却し、DSDA 61.9203g(0.19
9モル)を粉末状のまま15分間かけて添加し、その後3
時間撹拌を続けた。この間フラスコは5℃に保った。
(Example 1) NMP900 dehydrated and refined in a four-necked flask equipped with a dry nitrogen gas introduction tube, a cooler, a thermometer, and a stirrer.
g and 210 g of xylene, and stir vigorously for 10 minutes while flowing nitrogen gas. Next, BAPS 60.5503g (0.140
Mol) and α, ω-bis (3-aminopropyl) polydimethylsiloxane (APPS) 43.5000 g (average molecular weight 870, 0.05
0 mol) and 2.4852 g (0.010 mol) of bis (3-aminopropyl) tetramethyldisiloxane (APPS, n = 0) are added and the system is stirred until it becomes uniform. After uniform dissolution,
The system was cooled to 5 ° C in an ice water bath, and DSDA 61.9203 g (0.19
9 mol) in powder form over 15 minutes, then 3
Stirring was continued for hours. During this time, the flask was kept at 5 ° C.

【0027】その後、窒素ガス導入管と冷却器を外し、
キシレンを満たしたディーン・スターク管をフラスコに
装着した。油浴に代えて系を200℃に加熱し発生する水
を系外に除いた。5時間加熱したところ、系からの水の
発生は認められなくなった。冷却後この反応溶液を大量
のメタノール中に投入しポリイミド樹脂を析出させた。
固形分を濾過後、80℃で12時間減圧乾燥し溶剤を除い
た。KBr錠剤法で赤外吸収スペクトルを測定したとこ
ろ、環状イミド結合に由来する5.6μmの吸収を認めた
が、アミド結合に由来する6.06μmの吸収を認めること
はできず、この樹脂は100%イミド化していることが確
かめられた。このようにして得たポリイミド樹脂151.8
g(収率90.1%)をシクロヘキサノン/ジグライム(50
/50 W/W%)に溶解し、固形分20%のポリイミド樹
脂ワニスを調製した。
After that, the nitrogen gas introducing pipe and the cooler were removed,
The flask was fitted with a Dean-Stark tube filled with xylene. Instead of the oil bath, the system was heated to 200 ° C. and the generated water was removed from the system. After heating for 5 hours, generation of water from the system was not observed. After cooling, this reaction solution was poured into a large amount of methanol to precipitate a polyimide resin.
The solid content was filtered and then dried under reduced pressure at 80 ° C. for 12 hours to remove the solvent. When the infrared absorption spectrum was measured by the KBr tablet method, an absorption of 5.6 μm derived from a cyclic imide bond was observed, but an absorption of 6.06 μm derived from an amide bond was not observed, and this resin was 100% imide. It was confirmed that it has changed. Polyimide resin 151.8 thus obtained
Cyclohexanone / diglyme (50% yield 90.1%)
/ 50 W / W%) to prepare a polyimide resin varnish having a solid content of 20%.

【0028】このポリイミド樹脂ワニスを鏡面研磨した
ステンレス板に塗布し、熱風循環式乾燥機で120℃で0.5
時間乾燥後、ステンレス板から剥離した。このフィルム
の四周を鉄枠に固定して220℃で1時間加熱乾燥した。
冷却後フィルムの厚みを測定したところ26μmであっ
た。得られたフィルムは室温では全く粘着性を示さずタ
ックフリーであった。
This polyimide resin varnish was applied on a mirror-polished stainless steel plate and dried at 120 ° C. for 0.5 at 120 ° C. in a hot air circulation dryer.
After drying for an hour, it was peeled from the stainless plate. Four rounds of this film were fixed to an iron frame and heated and dried at 220 ° C. for 1 hour.
After cooling, the thickness of the film was measured and found to be 26 μm. The obtained film showed no tackiness at room temperature and was tack-free.

【0029】このフィルムを42合金のプレートにヒート
ブロックで熱プレスして試験片を作製した。接着条件は
310℃2秒間熱圧着し、圧を開放後310℃で30秒間アニー
ルした。接着面にかかる圧力は、ゲージ圧力と接着面積
から計算の結果4kgf/cm2であった。この試験片の180度
ピール強度は1.97kgf/cmであり、優れた接着力を示し
た。破断面は接着樹脂層が凝集破壊し、発泡は全く認め
られなかった。他の性能も含めた結果を第1表に示す。
This film was hot pressed with a heat block on a 42 alloy plate to prepare a test piece. Bonding conditions
After thermocompression bonding at 310 ° C. for 2 seconds, the pressure was released, and annealing was performed at 310 ° C. for 30 seconds. The pressure applied to the bonding surface was 4 kgf / cm 2 as a result of calculation from the gauge pressure and the bonding area. The 180-degree peel strength of this test piece was 1.97 kgf / cm, which showed excellent adhesive strength. At the fractured surface, the adhesive resin layer was cohesively destroyed and no foaming was observed. The results including other performances are shown in Table 1.

【0030】(実施例2)実施例1で得たポリイミド樹
脂をリバースロールコーターでポリイミドフィルム(ユ
ーピレックスSGA、宇部興産(株)製)に両面塗布し、
両面接着テープを得た。乾燥温度は最高210℃で乾燥時
間10分であった。この接着テープを実施例1と同じ条件
で42合金のプレートに熱接着した。180度ピール試験の
結果、発泡などのトラブルは無く、1.84kgf/cmの強度
を示した。
Example 2 The polyimide resin obtained in Example 1 was coated on both sides with a reverse roll coater on a polyimide film (Upilex SGA, Ube Industries, Ltd.),
A double-sided adhesive tape was obtained. The maximum drying temperature was 210 ° C and the drying time was 10 minutes. This adhesive tape was heat-bonded to the 42 alloy plate under the same conditions as in Example 1. As a result of the 180-degree peel test, there was no trouble such as foaming and the strength was 1.84 kgf / cm.

【0031】(実施例3)実施例1と同様に、BAPS
M 56.2253g(0.130モル)とAPPS 60.9000g(平
均分子量870、0.070モル)とDSDA 71.5124g(0.20
0モル)とからポリアミック酸を調製し、さらに加熱し
てイミド化した。これを実施例1と同様にメタノールで
再沈後、ポリイミドフィルムに塗布してフィルム接着剤
を作成した。このポリイミド樹脂およびフィルム接着剤
の評価結果を第1表に示す。
Example 3 As in Example 1, BAPS
M 56.2253 g (0.130 mol) and APPS 60.9000 g (average molecular weight 870, 0.070 mol) and DSDA 71.5124 g (0.20 mol)
(0 mol) and polyamic acid were prepared and further heated to imidize. This was reprecipitated with methanol in the same manner as in Example 1 and then applied to a polyimide film to prepare a film adhesive. Table 1 shows the evaluation results of the polyimide resin and the film adhesive.

【0032】(実施例4〜6)実施例1と同様の方法に
て、第1表に示した酸とアミン成分の種類と割合でポリ
イミド樹脂ワニスを調製してフィルム接着剤を作成し
た。これらの性能を第1表に示す。
(Examples 4 to 6) In the same manner as in Example 1, polyimide resin varnishes were prepared with the types and proportions of the acid and amine components shown in Table 1 to prepare film adhesives. These performances are shown in Table 1.

【0033】なお、第1表で、配合の数値はそれぞれの
成分中の配合当量比であり、吸水率は85℃85%RHの環
境下で500時間(HH-500)処理後の飽和吸水率を、発
生ガス、発生水分は250℃で15分間加熱した時に発生す
るガスをGC−MS法で、水分はカール・フィッシャー
法でそれぞれ定量した値を示す。溶解性の欄のSは該当
する溶媒に溶解することを、Iは溶解しないことを示
す。
In Table 1, the numerical values of the blends are the blending equivalent ratios of the respective components, and the water absorption rate is the saturated water absorption rate after treatment for 500 hours (HH-500) in an environment of 85 ° C. and 85% RH. The generated gas and the generated water are values determined by the GC-MS method and the Karl Fischer method for the gas generated when heated at 250 ° C. for 15 minutes. S in the solubility column indicates that the substance is soluble in the corresponding solvent, and I indicates that it is not.

【0034】[0034]

【表1】 [Table 1]

【0035】(実施例7)実施例1と同様にして、AP
PS、BAPSMとDSDAを a/(a+b)=1.00
0、(c+d)/(c+d+e)= 1.000、d/(c+
d+e)= 0.700で反応した。溶液中で熱イミド化後、
再沈精製しポリイミド樹脂を得た。このポリイミド樹脂
はシクロヘキサノン/ジグライムの混合溶媒に良く溶解
した。鉄枠にはめてフィルムを作成するとき、150℃で
乾燥すると垂れ下りがあり、注意が必要であった。ガラ
ス転移温度を測定すると103℃であった。
(Embodiment 7) In the same manner as in Embodiment 1, AP
PS / BAPSM and DSDA are a / (a + b) = 1.00
0, (c + d) / (c + d + e) = 1.000, d / (c +
It reacted at d + e) = 0.700. After thermal imidization in solution,
Reprecipitation and purification were performed to obtain a polyimide resin. This polyimide resin was well dissolved in a mixed solvent of cyclohexanone / diglyme. It was necessary to pay attention to the fact that when the film was put on an iron frame and dried at 150 ° C, it drooped down. The glass transition temperature was measured to be 103 ° C.

【0036】(比較例1)実施例1と同様に、4,4'-ジ
アミノジフェニルエーテル 26.0311g(0.130モル)と
APPS 60.9000g(平均分子量870、0.070モル)と1,
2,4,5-ベンゼンテトラカルボン酸二無水物 43.5372g
(0.200モル)からポリアミック酸を調製した。さらに
加熱イミド化したが、反応が進むに従い樹脂が析出し、
可溶性のポリイミド樹脂は得られなかった。
(Comparative Example 1) In the same manner as in Example 1, 26.0311 g (0.130 mol) of 4,4'-diaminodiphenyl ether, 60.9000 g of APPS (average molecular weight of 870, 0.070 mol) and 1,4
2,4,5-Benzenetetracarboxylic dianhydride 43.5372g
A polyamic acid was prepared from (0.200 mol). It was further imidized by heating, but as the reaction proceeded, the resin precipitated,
No soluble polyimide resin was obtained.

【0037】(比較例2)実施例1と同様に、BAPS
M 56.2253g(0.130モル)とAPPS 60.9000g(0.0
70モル)と3,3',4,4'-ベンゾフェノンテトラカルボン酸
二無水物 64.3171g(0.200モル)とからポリアミック
酸を調製し、さらに加熱してイミド化した。再沈精製後
シクロヘキサノン/ジグライム混合溶媒に溶解しようと
したが溶解しなかったのでNMPに溶解した。これを実
施例2と同様にポリイミドフィルムに塗布した。乾燥条
件は、120℃1時間、220℃1時間では接着時に残留溶媒
のため気泡が発生するので、さらに、280℃で1時間乾
燥した。42合金のプレートに対する接着性の評価では、
310℃2秒で圧着したが、ピール強度が0.01kgf/cm以下
と全く弱かった。
Comparative Example 2 As in Example 1, BAPS
M 56.2253g (0.130mol) and APPS 60.9000g (0.0
Polyamic acid was prepared from 70 mol) and 64.3171 g (0.200 mol) of 3,3 ', 4,4'-benzophenone tetracarboxylic acid dianhydride, and further imidized by heating. After reprecipitation purification, it tried to dissolve in cyclohexanone / diglyme mixed solvent, but it did not dissolve, so it was dissolved in NMP. This was applied to a polyimide film in the same manner as in Example 2. When the drying conditions are 120 ° C. for 1 hour and 220 ° C. for 1 hour, bubbles are generated due to the residual solvent at the time of adhesion. In the evaluation of the adhesion of the 42 alloy to the plate,
When pressure was applied at 310 ° C. for 2 seconds, the peel strength was 0.01 kgf / cm or less, which was quite weak.

【0038】(比較例3)実施例1と同様にして、BA
PSとDSDAを反応し、ポリイミド樹脂を得た。この
時、a/(a+b)= 1.000、(c+d)/(c+d+
e)= 1.000、d/(c+d+e)= 0 である。この
ポリイミド樹脂はシクロヘキサノンなどの低沸点溶媒に
は溶解しなかった。NMPには溶解するのでNMPに溶
解してフィルムを得た。180度ピール強度が0.5kgf/cm
以上得られるこのフィルムの接着温度は380℃以上であ
り、またHH-500処理後の吸水率は3.08%と高い値を示
した。
Comparative Example 3 In the same manner as in Example 1, BA
PS and DSDA were reacted to obtain a polyimide resin. At this time, a / (a + b) = 1.000, (c + d) / (c + d +
e) = 1.000 and d / (c + d + e) = 0. This polyimide resin did not dissolve in a low boiling point solvent such as cyclohexanone. Since it dissolves in NMP, it was dissolved in NMP to obtain a film. 180 degree peel strength is 0.5kgf / cm
The film thus obtained had an adhesion temperature of 380 ° C. or higher, and a high water absorption rate of 3.08% after HH-500 treatment.

【0039】[0039]

【発明の効果】本発明によれば、低吸水性と耐熱性と接
着作業性を両立させた信頼性の高いフィルム接着剤を提
供することが可能である。特に、不純物レベルが低く、
加熱時に発生するガス成分が極めて低いためリードフレ
ームを汚染することがない。また短時間で接着可能であ
り、半導体実装材料として工業的に極めて利用価値が高
い。
According to the present invention, it is possible to provide a highly reliable film adhesive which has both low water absorption, heat resistance and bonding workability. In particular, the impurity level is low,
Since the gas component generated during heating is extremely low, the lead frame is not contaminated. Further, it can be adhered in a short time and is industrially extremely useful as a semiconductor packaging material.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 3,3',4,4'-ジフェニルスルフォンテトラ
カルボン酸二無水物とビス-4-(アミノフェノキシ)フェ
ニルスルフォンおよびα,ω-ビス(3-アミノプロピル)ポ
リジメチルシロキサンとを反応させてイミド閉環せしめ
たポリイミド樹脂が主成分であるフィルム接着剤。
1. 3,3 ′, 4,4′-Diphenylsulfone tetracarboxylic dianhydride, bis-4- (aminophenoxy) phenyl sulfone and α, ω-bis (3-aminopropyl) polydimethylsiloxane A film adhesive whose main component is a polyimide resin obtained by reacting an imide to cause imide ring closure.
【請求項2】 4,4'-ジフェニルスルフォンテトラカル
ボン酸二無水物aモル、他の酸成分bモル、ビス-4-(ア
ミノフェノキシ)フェニルスルフォンcモル、α,ω-ビ
ス(3-アミノプロピル)ポリジメチルシロキサンdモル、
他のアミン成分eモルを a/(a+b)≧ 0.7、(c
+d)/(c+d+e)≧ 0.7 かつ 0.5 ≧d/(c+
d+e)≧ 0.05 の割合とした請求項1記載のフィルム
接着剤。
2. 4,4'-Diphenylsulfone tetracarboxylic acid dianhydride a mole, other acid component b mole, bis-4- (aminophenoxy) phenyl sulfone c mole, α, ω-bis (3-amino Propyl) polydimethylsiloxane d mol,
The other amine component (e mole) is a / (a + b) ≧ 0.7, (c
+ D) / (c + d + e) ≧ 0.7 and 0.5 ≧ d / (c +
The film adhesive according to claim 1, wherein a ratio of d + e) ≧ 0.05.
【請求項3】 ビス-4-(アミノフェノキシ)フェニルス
ルフォンがビス-4-(4-アミノフェノキシ)フェニルスル
フォンである請求項1又は請求項2記載のフィルム接着
剤。
3. The film adhesive according to claim 1, wherein the bis-4- (aminophenoxy) phenyl sulfone is bis-4- (4-aminophenoxy) phenyl sulfone.
【請求項4】 請求項1、請求項2又は請求項3記載の
接着剤が耐熱性フィルム基材の片面又は両面に施された
フィルム接着剤。
4. A film adhesive obtained by applying the adhesive according to claim 1, 2 or 3 to one side or both sides of a heat resistant film substrate.
JP14418292A 1992-06-04 1992-06-04 Film adhesive Pending JPH05331424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14418292A JPH05331424A (en) 1992-06-04 1992-06-04 Film adhesive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14418292A JPH05331424A (en) 1992-06-04 1992-06-04 Film adhesive

Publications (1)

Publication Number Publication Date
JPH05331424A true JPH05331424A (en) 1993-12-14

Family

ID=15356111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14418292A Pending JPH05331424A (en) 1992-06-04 1992-06-04 Film adhesive

Country Status (1)

Country Link
JP (1) JPH05331424A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07252459A (en) * 1993-03-29 1995-10-03 Hitachi Chem Co Ltd Heat-resistant adhesive
JPH0967559A (en) * 1995-08-31 1997-03-11 Tomoegawa Paper Co Ltd Adhesive tape for electronic part and liquid adhesive
JPH10183079A (en) * 1996-12-26 1998-07-07 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH10183097A (en) * 1996-12-27 1998-07-07 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH10212460A (en) * 1997-01-30 1998-08-11 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH1135902A (en) * 1997-07-23 1999-02-09 Tomoegawa Paper Co Ltd Adhesive tape for electronic parts
JP2001176895A (en) * 1994-10-31 2001-06-29 Hitachi Chem Co Ltd Laminating method, die-bonding method, laminating device, and die-bonding device of film-shaped organic die-bonding material, and semiconductor device and manufacturing method thereof using the same
EP1362901A2 (en) * 2002-05-14 2003-11-19 National Starch and Chemical Investment Holding Corporation Thermoset adhesive films
US6717242B2 (en) 1995-07-06 2004-04-06 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
US6825249B1 (en) 1994-12-26 2004-11-30 Hitachi Chemical Co., Ltd. Laminating method of film-shaped organic die-bonding material, die-bonding method, laminating machine and die-bonding apparatus, semiconductor device, and fabrication process of semiconductor device
US6855579B2 (en) 1995-07-06 2005-02-15 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157190A (en) * 1982-03-12 1983-09-19 日立化成工業株式会社 Method of producing substrate for flexible printed circuit
JPH0291124A (en) * 1988-09-29 1990-03-30 Nippon Steel Chem Co Ltd Polyimide copolymer and preparation thereof
JPH05179224A (en) * 1991-12-26 1993-07-20 Nippon Steel Chem Co Ltd Heat-resistant adhesive

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157190A (en) * 1982-03-12 1983-09-19 日立化成工業株式会社 Method of producing substrate for flexible printed circuit
JPH0291124A (en) * 1988-09-29 1990-03-30 Nippon Steel Chem Co Ltd Polyimide copolymer and preparation thereof
JPH05179224A (en) * 1991-12-26 1993-07-20 Nippon Steel Chem Co Ltd Heat-resistant adhesive

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07252459A (en) * 1993-03-29 1995-10-03 Hitachi Chem Co Ltd Heat-resistant adhesive
JP2001176895A (en) * 1994-10-31 2001-06-29 Hitachi Chem Co Ltd Laminating method, die-bonding method, laminating device, and die-bonding device of film-shaped organic die-bonding material, and semiconductor device and manufacturing method thereof using the same
US6825249B1 (en) 1994-12-26 2004-11-30 Hitachi Chemical Co., Ltd. Laminating method of film-shaped organic die-bonding material, die-bonding method, laminating machine and die-bonding apparatus, semiconductor device, and fabrication process of semiconductor device
US7012320B2 (en) 1995-07-06 2006-03-14 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
US6855579B2 (en) 1995-07-06 2005-02-15 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
US7781896B2 (en) 1995-07-06 2010-08-24 Hitachi Chemical Co., Ltd. Semiconductor device and process for fabrication thereof
US7387914B2 (en) 1995-07-06 2008-06-17 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
US7078094B2 (en) 1995-07-06 2006-07-18 Hitachi Chemical Co., Ltd. Semiconductor device and process for fabrication thereof
US6717242B2 (en) 1995-07-06 2004-04-06 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
US7057265B2 (en) 1995-07-06 2006-06-06 Hitachi Chemical Co., Ltd. Semiconductor device and process for fabrication thereof
JPH0967559A (en) * 1995-08-31 1997-03-11 Tomoegawa Paper Co Ltd Adhesive tape for electronic part and liquid adhesive
JPH10183079A (en) * 1996-12-26 1998-07-07 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH10183097A (en) * 1996-12-27 1998-07-07 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH10212460A (en) * 1997-01-30 1998-08-11 Tomoegawa Paper Co Ltd Adhesive tape for electronic part
JPH1135902A (en) * 1997-07-23 1999-02-09 Tomoegawa Paper Co Ltd Adhesive tape for electronic parts
EP1362901A3 (en) * 2002-05-14 2004-05-26 National Starch and Chemical Investment Holding Corporation Thermoset adhesive films
EP1362901A2 (en) * 2002-05-14 2003-11-19 National Starch and Chemical Investment Holding Corporation Thermoset adhesive films

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