JPH05326768A - Heat dissipating device - Google Patents

Heat dissipating device

Info

Publication number
JPH05326768A
JPH05326768A JP4158711A JP15871192A JPH05326768A JP H05326768 A JPH05326768 A JP H05326768A JP 4158711 A JP4158711 A JP 4158711A JP 15871192 A JP15871192 A JP 15871192A JP H05326768 A JPH05326768 A JP H05326768A
Authority
JP
Japan
Prior art keywords
semiconductor element
heat dissipation
cavity
dissipation device
heat radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4158711A
Other languages
Japanese (ja)
Inventor
Tsuneharu Katada
恒春 片田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4158711A priority Critical patent/JPH05326768A/en
Publication of JPH05326768A publication Critical patent/JPH05326768A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To reduce the thickness of a junction resin interposed between a semiconductor element and a heat radiator to an irreducible minimum so as to lessen the junction resistance in thermal conduction resistance and to mount the heat radiator on the semiconductor element without applying a mechanical external stress. CONSTITUTION:A semiconductor element 1, a junction resin 3, and a mounting board 4 are provided as usual. The upside of a heat radiator 22 is formed rugged to be high in heat dissipating properties, and a cavity 23 is provided inside the radiator 22. Three openings 24 are provided as uniformly dispersed to the center of the side face (a lower side in a figure) of the heat radiator 22 which bears against the semiconductor element 1 and where the cavity 23 is open. An exhaust vet 25 communicating with the above cavity 23 is provided to the other side face (a right side in a figure) of the heat radiator 22 in a sealable manner. That is, air inside the cavity 23 of the heat radiator is discharged out through the exhaust vent 25, whereby the cavity 23 is reduced in pressure to have a suction force act on four openings 24.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、コンピューターを始め
とするの各種電子機器に用いられる半導体素子の動作時
に生じる熱を空気中に放熱させる放熱装置に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation device for dissipating heat generated during the operation of a semiconductor element used in various electronic equipment such as a computer into the air.

【0002】[0002]

【従来の技術】従来、パーソナル・コンピューター・シ
ステム等で用いられている半導体素子は、一般に動作時
の発熱量が多く、半導体素子の温度を動作保証温度の範
囲内に抑えることが課題となっており、動作時の熱を空
気中に放熱させるために各種放熱手段が採用されてい
る。
2. Description of the Related Art Conventionally, semiconductor elements used in personal computer systems and the like generally generate a large amount of heat during operation, and it is a problem to keep the temperature of the semiconductor elements within the guaranteed operating temperature range. In order to dissipate the heat during operation into the air, various heat dissipating means are adopted.

【0003】図2は従来の半導体素子の放熱装置を示
し、ガラスエポキシ樹脂のプリント基板やセラミック基
板などからなる実装基板4の上に半導体素子1が実装さ
れており、放熱装置2が上記半導体素子1の上面に接合
樹脂3によって取り付けられている。
FIG. 2 shows a conventional heat dissipation device for a semiconductor device, in which a semiconductor device 1 is mounted on a mounting substrate 4 made of a glass epoxy resin printed circuit board, a ceramic substrate or the like, and the heat dissipation device 2 is the semiconductor device. It is attached to the upper surface of 1 by a bonding resin 3.

【0004】上記放熱装置2は、一般に半導体素子1を
実装基板4に実装させた後に、該半導体素子2の端面に
接合樹脂3を塗布した放熱装置2を載置して、該放熱装
置2を半導体素子1に押しつける方法で圧着一体化した
り、あるいは放熱装置2と半導体素子1および実装基板
4を重合わせ状態で挟みつける等して両者を機械的な外
部応力によって貼り付けして圧着一体化する方法で固定
していた。
In the heat dissipation device 2, generally, after the semiconductor element 1 is mounted on the mounting substrate 4, the heat dissipation device 2 having the end face of the semiconductor element 2 coated with the bonding resin 3 is placed, and the heat dissipation device 2 is mounted. The semiconductor device 1 is pressed and integrated by a method of pressing, or the heat dissipation device 2 and the semiconductor device 1 and the mounting substrate 4 are sandwiched in a state of being overlapped with each other, and both are attached by mechanical external stress to be integrated and pressure bonded. It was fixed by the method.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来の放熱装置の取り付け方法によれば、機械的外部応力
で放熱装置2を半導体素子1に固着させるために、半導
体素子1に圧力負荷が加わり、半導体素子1を破壊して
しまったり、半導体素子1内部に部分的な損傷を生じさ
せて信頼性を損なう原因になりやすいという問題があっ
た。
However, according to the conventional method for mounting the heat dissipation device, a pressure load is applied to the semiconductor device 1 in order to fix the heat dissipation device 2 to the semiconductor device 1 by mechanical external stress. There is a problem that the semiconductor element 1 may be destroyed, or the inside of the semiconductor element 1 may be partially damaged, which may cause a decrease in reliability.

【0006】一方、半導体素子1に無理な負荷を加えな
いようにするために接合樹脂3の量を増やして樹脂層の
厚さを厚くすることで接合樹脂3で圧着時の負荷を吸収
させる方法もあるが、接合樹脂3の厚さが増すために半
導体素子1から放熱装置2に伝達される熱の伝達性が悪
くなって充分な放熱効果が発揮されないという欠点があ
った。
On the other hand, in order to prevent an unreasonable load from being applied to the semiconductor element 1, the amount of the bonding resin 3 is increased to increase the thickness of the resin layer so that the bonding resin 3 absorbs the load at the time of crimping. However, there is a drawback in that the thickness of the bonding resin 3 increases, so that the transferability of heat transferred from the semiconductor element 1 to the heat dissipation device 2 deteriorates, and a sufficient heat dissipation effect cannot be exhibited.

【0007】さらに、半導体素子1の修理交換の場合に
は、固着されている放熱装置2を半導体素子1から一旦
剥がして半導体素子1の修理や交換を行う必要があり、
放熱装置2を剥離させる時にも半導体素子1に機械的応
力を加えなければならないために半導体素子1を傷つけ
るという問題もあった。
Further, in the case of repairing and replacing the semiconductor element 1, it is necessary to once remove the fixed heat dissipation device 2 from the semiconductor element 1 to repair or replace the semiconductor element 1.
There is also a problem that the semiconductor element 1 is damaged because mechanical stress must be applied to the semiconductor element 1 even when the heat dissipation device 2 is peeled off.

【0008】本発明は上記課題を解決するもので、半導
体素子に発生した熱を放熱させる放熱装置であり、簡単
な構成で半導体素子と放熱装置を密着させる構造であ
り、半導体素子と放熱装置との間に介在させる接合樹脂
の厚さを必要最低限の厚さにして、該接合樹脂による熱
の伝導抵抗を小さくするとともに、機械的外部応力を加
えることなく取り付けできる放熱装置を提供することを
目的とするものである。
The present invention is to solve the above problems, and is a heat dissipation device for radiating heat generated in a semiconductor element, and a structure in which a semiconductor element and a heat dissipation device are brought into close contact with each other with a simple structure. It is possible to provide a heat dissipation device that can be attached without applying mechanical external stress while making the thickness of the joining resin interposed between the two to be the minimum necessary thickness to reduce the heat conduction resistance of the joining resin. It is intended.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に発明は、半導体素子に装着される放熱装置であって、
放熱装置本体の内部に半導体素子と接する一端面が開口
部に形成された空洞部が設けられているとともに、他端
面に空洞部内の空気圧を減圧させる封印可能な排気口が
設けられており、空洞部内の空気圧を減圧することによ
って半導体素子に密着自在に構成されていることを特徴
とする放熱装置である。
To achieve the above object, the invention provides a heat dissipation device mounted on a semiconductor element,
Inside the body of the heat dissipation device, there is provided a cavity part having one end face in contact with the semiconductor element formed in the opening part, and at the other end face is provided with a sealable exhaust port for reducing the air pressure in the cavity part. It is a heat dissipation device characterized in that it is configured so as to be in close contact with a semiconductor element by reducing the air pressure inside the section.

【0010】[0010]

【作用】したがって、本発明の放熱装置では、半導体素
子と放熱装置を密着一体化させる際に、放熱装置に設け
られた空洞部の排気口から空洞部内部を減圧させること
により放熱装置の空洞部と連通した開口部が半導体素子
を吸着し、その吸引圧によって接合されることから半導
体素子と放熱装置との間を接合させる接合樹脂の厚さを
必要最低限の厚さまで減少させることができ、該接合樹
脂による熱抵抗を減少させて放熱効果を向上させること
ができるものである。
Therefore, in the heat dissipation device of the present invention, when the semiconductor element and the heat dissipation device are closely contacted and integrated, the inside of the cavity part is decompressed from the exhaust port of the cavity part provided in the heat dissipation device so that the cavity part of the heat dissipation device is reduced. The semiconductor element is adsorbed by the opening communicating with and the thickness of the bonding resin for bonding between the semiconductor element and the heat dissipation device can be reduced to the minimum necessary thickness because the bonding is performed by the suction pressure. The heat resistance due to the bonding resin can be reduced to improve the heat dissipation effect.

【0011】また、空洞部の減圧による吸引力で半導体
素子に密着されるので、機械的外部応力を半導体素子に
加えることがなく、半導体素子の損傷や破壊を防止し
て、信頼性を損なわずに接合できるものである。
Further, since the semiconductor element is brought into close contact with the semiconductor element by the suction force due to the decompression of the cavity, no external mechanical stress is applied to the semiconductor element, damage or destruction of the semiconductor element is prevented, and reliability is not impaired. It can be joined to.

【0012】さらに、半導体素子の接合樹脂を非硬化タ
イプの樹脂にすることによって、半導体素子を修理交換
する場合には、前記空洞部の排気口を封印を解除するこ
とで空洞部の吸引力を解除できるので修理交換の際に半
導体素子に外部応力を加えること無く放熱装置を取り外
して修理交換することができるものである。
Further, by using a non-curing type resin as the bonding resin for the semiconductor element, when the semiconductor element is repaired or replaced, the suction force of the cavity is removed by unsealing the exhaust port of the cavity. Since it can be released, the heat dissipation device can be detached and repaired and replaced without applying external stress to the semiconductor element during repair and replacement.

【0013】[0013]

【実施例】次に本発明の一実施例の放熱装置を示す図面
に従って説明する。図1において、1は半導体素子、3
は接合樹脂、4は実装基板であり、従来のものと同じで
ある。22は本発明の放熱装置であり熱伝導率の高い金
属材料によって形成されており、上面が放熱性の高い凹
凸形状に形成されており、内部には空洞部23が設けら
れている。また、上記放熱装置22が半導体素子と当接
される端面(図における下面側)中央部には上記空洞部
23が開口した開口部24,24,24が均一に分散さ
せて形成されている。また、他の端面(図における右側
面)には前記空洞部23と連通した排気口25が封印可
能に形成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A heat dissipation device according to an embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a semiconductor element, 3
Is a bonding resin, and 4 is a mounting substrate, which is the same as a conventional one. Reference numeral 22 denotes a heat dissipation device of the present invention, which is formed of a metal material having a high thermal conductivity, has an upper surface formed in an uneven shape having a high heat dissipation property, and has a cavity portion 23 provided therein. In addition, openings 24, 24, and 24 in which the cavity 23 is opened are formed uniformly in the center of the end surface (lower surface side in the drawing) where the heat dissipation device 22 contacts the semiconductor element. Further, an exhaust port 25 communicating with the hollow portion 23 is formed on the other end surface (right side surface in the figure) so as to be sealed.

【0014】すなわち、放熱装置22の空洞部23内の
空気を上記排気口25から排出することによって空洞部
23内を減圧して空洞部23の開口部24,24,24
に吸引力を作用させるように構成されている。
That is, the air in the cavity portion 23 of the heat dissipation device 22 is discharged from the exhaust port 25 to reduce the pressure inside the cavity portion 23 and the openings 24, 24, 24 of the cavity portion 23.
It is configured to exert a suction force on.

【0015】なお、放熱装置22の排気口25は適宜シ
ール部材26で外部から封印可能に形成されており、空
洞部23の減圧状態を保つように構成されている。
The exhaust port 25 of the heat radiating device 22 is formed so that it can be sealed from the outside by a seal member 26 as appropriate, and is configured to maintain the depressurized state of the cavity 23.

【0016】以下に、上記放熱装置22を半導体素子1
に取り付ける手順について説明する。まず、半導体素子
1を実装基板4に実装しておく。つぎに、放熱装置22
の開口部24,24,24側の端面に接合樹脂3を塗布
したのち該開口部24,24,24側端面を半導体素子
1の上面に当接させて載置する。しかるのち、放熱装置
22の排気口25に真空ポンプ等の減圧装置を接続して
放熱装置22の空洞部23内部の空気を排気して空洞部
23に連通された開口部24に吸引力を作用させ半導体
素子1を吸い寄せて接合樹脂3で放熱装置22を圧着さ
せる。
In the following, the heat dissipation device 22 is attached to the semiconductor element 1
The procedure for attaching to is explained. First, the semiconductor element 1 is mounted on the mounting board 4. Next, the heat dissipation device 22
After the bonding resin 3 is applied to the end faces of the openings 24, 24, 24 side, the end faces of the openings 24, 24, 24 are placed in contact with the upper surface of the semiconductor element 1. After that, a decompression device such as a vacuum pump is connected to the exhaust port 25 of the heat dissipation device 22 to exhaust the air inside the cavity 23 of the heat dissipation device 22 to apply suction force to the opening 24 communicated with the cavity 23. Then, the semiconductor element 1 is attracted and the heat dissipation device 22 is pressure-bonded with the bonding resin 3.

【0017】ついで放熱装置22の空洞部23内の空気
圧が所定の減圧レベルに達したら、排気口25を封印し
て空洞部23内の減圧レベルを保持させる。
Then, when the air pressure inside the cavity 23 of the heat dissipation device 22 reaches a predetermined pressure reduction level, the exhaust port 25 is sealed to maintain the pressure reduction level inside the cavity 23.

【0018】したがって、半導体素子1と放熱装置22
の接合面には開口部24,24,24から放熱装置22
の空洞部23内部に向かった吸引力が常に作用して半導
体素子1を吸着させて接合樹脂3で密着部をシールして
両者を一体的に接合させるものである。
Therefore, the semiconductor element 1 and the heat dissipation device 22
From the openings 24, 24, 24 to the heat dissipation device 22
The suction force toward the inside of the cavity 23 always acts to adsorb the semiconductor element 1 and seal the contact portion with the bonding resin 3 to integrally bond the two.

【0019】このとき、接合樹脂3を非硬化タイプの樹
脂にしておくと、排気口25の封印を解除して空洞部2
3の減圧を解除すると上記吸引力の作用を無くして放熱
装置22を半導体素子1から取り外すことができるよう
になる。
At this time, if the bonding resin 3 is a non-hardening type resin, the sealing of the exhaust port 25 is released and the cavity 2 is removed.
When the reduced pressure of 3 is released, the action of the suction force is eliminated and the heat dissipation device 22 can be removed from the semiconductor element 1.

【0020】このように、上記実施例によれば半導体素
子1と放熱装置22を密着させる際に放熱装置22に設
けられた空洞部23の内部を減圧させることにより、半
導体素子1と接する端面の開口部24,24,24が半
導体素子1を吸引して両者間を密着させるので接合樹脂
3の厚さを小さくして、良好な接合が行えるものであ
り、接合樹脂3の熱抵抗による熱伝導の低下が少なく、
放熱装置22が半導体素子1の温度を速やかに伝導吸収
して、空気中に放熱させることができる。
As described above, according to the above-described embodiment, when the semiconductor element 1 and the heat dissipation device 22 are brought into close contact with each other, the inside of the cavity 23 provided in the heat dissipation device 22 is depressurized, so that the end face of the semiconductor element 1 in contact with the semiconductor device 1 is reduced. Since the openings 24, 24, 24 attract the semiconductor element 1 and bring them into close contact with each other, the thickness of the bonding resin 3 can be reduced and good bonding can be performed. Less decrease,
The heat dissipation device 22 can quickly conduct and absorb the temperature of the semiconductor element 1 and dissipate the heat in the air.

【0022】また、放熱装置の空洞部23内の吸引力を
利用したものであるので、外部から機械的な外力を加え
ることがないものであり、半導体素子1の外力による損
傷や破壊が生じる恐れがなく安心して放熱装置22を装
着させることができる。
Further, since the suction force inside the cavity portion 23 of the heat dissipation device is used, no external mechanical force is applied from the outside, and the semiconductor element 1 may be damaged or destroyed by the external force. Therefore, the heat dissipation device 22 can be attached without anxiety.

【0023】[0023]

【発明の効果】以上述べた如く、本発明は、半導体素子
に装着される放熱装置であって、放熱装置本体の内部に
半導体素子と接する一端面が開口部に形成された空洞部
が設けられているとともに、他端面に空洞部内の空気圧
を減圧させる封印可能な排気口が設けられており、空洞
部内の空気圧を減圧することによって半導体素子に密着
自在に構成されていることを特徴とする放熱装置である
から、半導体素子と放熱装置を密着させる際に、放熱装
置の排気口から空洞部内の空気を排出して空洞部内を所
定レベルまで減圧させることで、放熱装置の開口部が半
導体素子を吸着して、接合樹脂を必要最小限まで薄くで
きるものであり、これによって接合樹脂による熱抵抗を
軽減して放熱効果の高い放熱装置の取り付け状態が達成
されるものである。
As described above, according to the present invention, there is provided a heat dissipation device mounted on a semiconductor element, wherein a heat dissipation device main body is provided with a cavity portion having an opening at one end face which contacts the semiconductor element. In addition, the other end surface is provided with a sealable exhaust port for reducing the air pressure in the cavity, and by reducing the air pressure in the cavity, the heat radiation is characterized by being configured so as to be in close contact with the semiconductor element. Since the device is a device, when the semiconductor element and the heat dissipation device are brought into close contact with each other, the air in the cavity is exhausted from the exhaust port of the heat dissipation device to reduce the pressure inside the cavity to a predetermined level, so that the opening of the heat dissipation device removes the semiconductor element. By adsorbing, the bonding resin can be made as thin as necessary to reduce the thermal resistance due to the bonding resin and achieve the mounting state of the heat dissipation device with high heat dissipation effect.

【0024】また、機械的外力を加えることなく両者の
間隔を狭い間隔にできるので半導体素子の損傷や破壊を
生じさせることがなく、信頼性の高い放熱装置の接合が
確保できるものである。
Further, since the distance between the two can be made narrow without applying a mechanical external force, the semiconductor element can be prevented from being damaged or destroyed, and the highly reliable connection of the heat dissipation device can be secured.

【0025】さらに、放熱装置と半導体素子の間の接合
樹脂を粘着性樹脂などの非硬化タイプの樹脂を使用して
接合しておくと、放熱装置を接合した後においても放熱
装置の排気口の封印を解除するだけで半導体素子の吸着
を解除させて放熱装置を容易に取り外すことができるも
のであり、半導体素子の修理や交換の際にも機械的外力
を加えて剥離させる必要がなく、半導体素子の修理交換
による半導体素子の損傷を防止することができるという
効果を有するものである。
Further, if the bonding resin between the heat dissipating device and the semiconductor element is bonded using a non-curing type resin such as an adhesive resin, the exhaust port of the heat dissipating device can be connected even after the heat dissipating device is bonded. The semiconductor device can be easily removed by simply removing the seal, and the heat dissipation device can be removed easily. This has the effect of preventing damage to the semiconductor element due to repair and replacement of the element.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の放熱装置の一実施例およびその取り付
け状態を示す断面図、
FIG. 1 is a cross-sectional view showing an embodiment of a heat dissipation device of the present invention and a mounting state thereof,

【図2】従来の放熱装置とその取り付け状態を説明する
断面図である。
FIG. 2 is a cross-sectional view illustrating a conventional heat dissipation device and a mounting state thereof.

【符号の説明】[Explanation of symbols]

1 半導体素子 3 接合樹脂 4 実装基板 22 放熱装置 23 空洞部 24 開口部 25 排気口 26 シール部材 DESCRIPTION OF SYMBOLS 1 Semiconductor element 3 Bonding resin 4 Mounting board 22 Radiator 23 Cavity 24 Opening 25 Exhaust port 26 Sealing member

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子に装着される放熱装置であっ
て、放熱装置本体の内部に半導体素子と接する一端面が
開口部に形成された空洞部が設けられているとともに、
他端面に空洞部内の空気圧を減圧させる封印可能な排気
口が設けられており、空洞部内の空気圧を減圧すること
によって半導体素子に密着自在に構成されていることを
特徴とする放熱装置。
1. A heat dissipation device to be mounted on a semiconductor element, wherein a heat dissipation device main body is provided with a cavity portion having an opening at one end surface in contact with the semiconductor element,
A heat dissipation device, characterized in that a sealable exhaust port for reducing the air pressure in the cavity is provided on the other end surface, and is configured to be in close contact with a semiconductor element by reducing the air pressure in the cavity.
JP4158711A 1992-05-25 1992-05-25 Heat dissipating device Pending JPH05326768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4158711A JPH05326768A (en) 1992-05-25 1992-05-25 Heat dissipating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4158711A JPH05326768A (en) 1992-05-25 1992-05-25 Heat dissipating device

Publications (1)

Publication Number Publication Date
JPH05326768A true JPH05326768A (en) 1993-12-10

Family

ID=15677688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4158711A Pending JPH05326768A (en) 1992-05-25 1992-05-25 Heat dissipating device

Country Status (1)

Country Link
JP (1) JPH05326768A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692291B2 (en) * 2001-04-30 2010-04-06 Samsung Electronics Co., Ltd. Circuit board having a heating means and a hermetically sealed multi-chip package
JP2013084854A (en) * 2011-10-12 2013-05-09 Honda Motor Co Ltd Housing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692291B2 (en) * 2001-04-30 2010-04-06 Samsung Electronics Co., Ltd. Circuit board having a heating means and a hermetically sealed multi-chip package
JP2013084854A (en) * 2011-10-12 2013-05-09 Honda Motor Co Ltd Housing

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