JPH0532184B2 - - Google Patents

Info

Publication number
JPH0532184B2
JPH0532184B2 JP61114647A JP11464786A JPH0532184B2 JP H0532184 B2 JPH0532184 B2 JP H0532184B2 JP 61114647 A JP61114647 A JP 61114647A JP 11464786 A JP11464786 A JP 11464786A JP H0532184 B2 JPH0532184 B2 JP H0532184B2
Authority
JP
Japan
Prior art keywords
dielectric film
processed
covering member
workpiece
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61114647A
Other languages
Japanese (ja)
Other versions
JPS61257733A (en
Inventor
Kosuke Ooshio
Osamu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Shibaura Engineering Works Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Engineering Works Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Shibaura Engineering Works Co Ltd
Priority to JP11464786A priority Critical patent/JPS61257733A/en
Publication of JPS61257733A publication Critical patent/JPS61257733A/en
Publication of JPH0532184B2 publication Critical patent/JPH0532184B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は静電チヤツクに係り、特にエツチング
による誘電体膜の消耗を防ぐようにした静電チヤ
ツクに関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to an electrostatic chuck, and more particularly to an electrostatic chuck that prevents the dielectric film from being consumed by etching.

(従来の技術) 第4図は、ドライエツチング装置における従来
の一般的な静電チヤツクを示したもので、平板状
のステージ1の上面側には、内部に銅等からなる
フイルム状の電極2を挟み込んだポリイミド製の
誘電体膜3が貼着されており、上記ステージ1の
内部には、被処理物Aを冷却する冷却水管4が導
通されている。
(Prior Art) Fig. 4 shows a conventional general electrostatic chuck in a dry etching device. A dielectric film 3 made of polyimide sandwiching the stage 1 is attached to the stage 1, and a cooling water pipe 4 for cooling the object A is connected to the inside of the stage 1.

上記静電チヤツクの場合、被処理物Aを誘電体
膜3上に載置し、電極2に直流電圧を印加するこ
とにより、被処理物Aを静電的に保持するもので
ある。そして、通常は、このような構成の静電チ
ヤツクを真空処理容器内に設けて、被処理物Aの
エツチング等の真空処理を行うようなされてい
た。
In the case of the electrostatic chuck, the object to be processed A is placed on the dielectric film 3 and a DC voltage is applied to the electrode 2, thereby holding the object A electrostatically. Usually, an electrostatic chuck having such a structure is provided in a vacuum processing container to perform vacuum processing such as etching of the object A to be processed.

(発明が解決しようとする課題) しかし、上記静電チヤツクを用いてエツチング
を行なうと、被処理物Aと同時に誘電体膜3もエ
ツチングされてしまい、誘電体膜3が著しく消耗
してしまうという欠点を有している。そのため、
特に被処理物Aの周辺部において電極2が露出し
て誘電体膜3が早急に使用不能となり、頻繁に貼
り代えを行う必要があるため、非常に不経済であ
るという欠点もあつた。
(Problem to be Solved by the Invention) However, when etching is performed using the electrostatic chuck described above, the dielectric film 3 is etched at the same time as the object to be processed A, and the dielectric film 3 is significantly consumed. It has its drawbacks. Therefore,
Particularly, the electrode 2 is exposed around the object A to be treated, and the dielectric film 3 quickly becomes unusable, requiring frequent replacement, which is extremely uneconomical.

なお、誘電体膜3を耐エツチング性の強い材料
で構成することも考えられるが、このような材料
で構成した場合、ポリイミド樹脂と異なり、純度
を高くして高吸着力を得るようにすることが一般
にかなり困難となつてしまう。
It is also conceivable that the dielectric film 3 be made of a material with strong etching resistance, but when it is made of such a material, unlike polyimide resin, it must be made with high purity to obtain a high adsorption force. is generally quite difficult.

本発明は上記に鑑みてなされたもので、誘電体
膜として純度が高く吸着力が良いポリイミド樹脂
等を使用することができ、しかも誘電体膜の消耗
を極力防ぐことができるようにした静電チヤツク
を提供することを目的とする。
The present invention has been made in view of the above, and it is possible to use polyimide resin with high purity and good adsorption power as the dielectric film, and to prevent wear of the dielectric film as much as possible. The purpose is to provide a check.

〔発明の構成〕[Structure of the invention]

(課題を解決するための手段) 上記目的を達成するため、本発明の静電チヤツ
クは、ドライエツチング装置やスパツタ装置等に
おけるステージの被処理物固定部側に、内部に電
極を埋設した誘電体膜を取付け、上記電極に直流
電圧を印加することにより被処理物を静電的に固
定する静電チヤツクにおいて、上記ステージの上
面に上記誘電体膜とセラミツク系の被覆部材とを
順次積層するとともに、上記被覆部材に被処理物
の外径よりやや大きな内径で該被処理物の周囲を
囲繞し、かつこの被処理物の周縁部下面まで延び
る凹陥部を設け、上記誘電体膜を該凹陥部の内部
に収納される被処理物の外径より小さい範囲で、
かつ上面を上記凹陥部表面より僅かに高く位置さ
せて外部に露出させたものである。
(Means for Solving the Problems) In order to achieve the above object, the electrostatic chuck of the present invention is a dielectric chuck with an electrode embedded therein on the workpiece fixing part side of the stage of a dry etching device, sputtering device, etc. In an electrostatic chuck that electrostatically fixes a workpiece by attaching a film and applying a DC voltage to the electrode, the dielectric film and the ceramic coating member are sequentially laminated on the upper surface of the stage, and , the coating member is provided with a recessed portion that surrounds the object to be processed and has an inner diameter slightly larger than the outer diameter of the object to be processed, and extends to the lower surface of the periphery of the object to be processed, and the dielectric film is placed in the recessed portion. Within a range smaller than the outer diameter of the workpiece stored inside the
Further, the upper surface is positioned slightly higher than the surface of the recessed portion and exposed to the outside.

(作用) 上記のように構成した本発明によれば、被処理
物を保持してこれにエツチング処理等を施す際、
被処理物は被覆部材の凹陥部内に位置決めして配
置され、この時誘電体膜の露出部は、ここに配置
された被処理物と該被処理物の周辺から周縁部下
面まで延出している被覆部材でほぼ完全に包囲さ
れるため、被処理物のエツチングと同時に誘電体
膜がエツチングされてしまうことを極力防止する
ことができる。
(Function) According to the present invention configured as described above, when holding an object to be processed and performing an etching process or the like on it,
The object to be processed is positioned and placed within the recessed portion of the covering member, and at this time, the exposed portion of the dielectric film extends from the object to be processed placed here and the periphery of the object to the lower surface of the periphery. Since it is almost completely surrounded by the covering member, it is possible to prevent the dielectric film from being etched at the same time as the object to be processed.

(実施例) 以下、本発明の実施例を第1図乃至第3図を参
照し、第4図と同一部分には同一符号に付して説
明する。
(Example) Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3, and the same parts as in FIG. 4 are given the same reference numerals.

第1図は、本発明の一実施例を示したもので、
ステージ1の被処理物Aの外周縁部該当位置に
は、環状の溝5が形成され、誘電体膜3は、上記
溝5の内側に貼着されるとともに、一部が上記溝
5と直交するようにステージ1の外周部まで延び
電極2を図示しない電源供給装置に接続するよう
になされている。
FIG. 1 shows an embodiment of the present invention.
An annular groove 5 is formed at the corresponding position on the outer peripheral edge of the workpiece A on the stage 1, and the dielectric film 3 is adhered to the inside of the groove 5, and a part thereof is perpendicular to the groove 5. The electrode 2 extends to the outer periphery of the stage 1 and is connected to a power supply device (not shown).

そして、上記溝5内に位置して環状の被覆部材
6aが、ステージ1の上面側であつて被処理物A
の固定位置以外の部分に位置して中央に円形孔を
有する板状の被覆部材6bが夫々取付けられてい
る。この被覆部材6a,6bは、カーボン、石英
その他セラミツク等の材料からなるものであり、
板状の被覆部材6bの円形孔内周面と環状の被覆
部6aの表面によつて凹陥部7が形成されてい
る。
Then, an annular covering member 6a located in the groove 5 is placed on the upper surface side of the stage 1 and on the object to be processed A.
A plate-shaped covering member 6b having a circular hole in the center is attached to a portion other than the fixed position. The covering members 6a and 6b are made of materials such as carbon, quartz, and other ceramics.
A concave portion 7 is formed by the inner peripheral surface of the circular hole of the plate-shaped covering member 6b and the surface of the annular covering portion 6a.

ここに、上記凹陥部7の内径Ф3は、被処理物
Aの外径Ф2よりやや大きく(Ф3>Ф2)、かつ被
覆部材6aの内径Ф1は、被処理物Aの外径Ф2
り小さく(Ф1<Ф2)設定され、これによつて被
処理物Aの周囲をこの凹陥部7で囲繞するととも
に、被覆部材6aが被処理物Aの周縁部下面に延
びるようになされている。また、被覆部材6aの
外径Ф4は、凹陥部7の内径Ф3より大きく(Ф4
>Ф3)設定されている。
Here, the inner diameter Ф 3 of the recessed portion 7 is slightly larger than the outer diameter Ф 2 of the object A to be processed (Ф 3 > Ф 2 ), and the inner diameter Ф 1 of the covering member 6a is the outer diameter of the object A to be processed. It is set to be smaller than Ф 21 < Ф 2 ), so that the workpiece A is surrounded by the concave portion 7 and the covering member 6a extends to the lower surface of the periphery of the workpiece A. being done. Further, the outer diameter Ф 4 of the covering member 6a is larger than the inner diameter Ф 3 of the recessed part 7 (Ф 4
>Ф 3 ) is set.

更に、上記被覆部材6aの厚さは、溝5の深さ
よりも僅かに小さく設定され、これによつて、上
記導電体膜3は、溝5の内側でのみ外部に露出
し、しかもこの露出部の上面3aが、凹陥部7の
表面7aより僅かに高くなるようになされてい
る。
Further, the thickness of the covering member 6a is set to be slightly smaller than the depth of the groove 5, so that the conductive film 3 is exposed to the outside only inside the groove 5, and this exposed portion The upper surface 3a of the recess 7 is slightly higher than the surface 7a of the recess 7.

これにより、被処理物Aを保持してエツチング
を行なう場合、被処理物Aは被覆部材6a,6b
で構成された凹陥部7内に位置決めして配置さ
れ、この時誘電体膜3の露出部の上面3aは、こ
こに配置された被処理部Aと該被処理物Aの周囲
から周縁部下面まで延出している被覆部材6a,
6bでほぼ完全に包囲されるため、被処理物Aの
エツチングと同時に誘電体膜3の露出部の表面3
aがエツチングされてしまうことを極力防止する
ことができる。
As a result, when etching is performed while holding the object A, the object A is attached to the covering members 6a and 6b.
At this time, the upper surface 3a of the exposed portion of the dielectric film 3 extends from the periphery of the processing target A and the processing object A disposed here to the lower surface of the periphery. The covering member 6a extends up to
6b, the surface 3 of the exposed portion of the dielectric film 3 is etched at the same time as the object A is etched.
It is possible to prevent a from being etched as much as possible.

この結果、被覆部材6a,6bにより、被処理
物Aの固定位置以外での誘電体膜3の消耗を防止
して電極2の露出を防止することができ、これに
より、誘電体膜3の耐使用期間を大幅に延長する
ことが可能となる。
As a result, the covering members 6a and 6b can prevent the dielectric film 3 from being worn out and expose the electrode 2 at locations other than the fixed position of the workpiece A, thereby increasing the durability of the dielectric film 3. It becomes possible to significantly extend the period of use.

第2図に、電極2を挟み込んだ誘電体膜3の斜
視図を示す。
FIG. 2 shows a perspective view of the dielectric film 3 with the electrode 2 sandwiched therebetween.

また、第3図に示すように、被覆部材6を一体
に形成するとともに、所定の深さの溝により凹陥
部7を形成し、この凹陥部7内に露出部の上面3
aをこの表面7aより僅かに突出させて誘電体膜
3を配置するようにしてもよい。
Further, as shown in FIG. 3, the covering member 6 is integrally formed, and a recessed part 7 is formed by a groove of a predetermined depth, and the upper surface 3 of the exposed part is formed in this recessed part 7.
The dielectric film 3 may be disposed with a slightly protruding from the surface 7a.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、被処理物を
保持してこれにエツチング処理を施す際、凹陥部
によつて位置決めしつつ配置する被処理物と該被
処理物の周囲から周縁部下面まで延出している被
覆部材で誘電体膜の露出部をほぼ完全に包囲し
て、被処理物のエツチングと同時に誘電体膜がエ
ツチングされてしまうことを極力防止することが
できる。
As described above, according to the present invention, when holding a workpiece and performing an etching process on the workpiece, the workpiece is positioned while being positioned by the recessed part, and the lower surface of the peripheral edge of the workpiece is By almost completely surrounding the exposed portion of the dielectric film with the covering member extending up to the surface, it is possible to prevent as much as possible the dielectric film from being etched at the same time as the object to be processed is etched.

従つて、誘電体膜としてポリイミド樹脂等の純
度が高く吸着力が高いものを使用し、しかも耐使
用期間を大幅に延長できるといつた効果がある。
Therefore, it is possible to use a material such as polyimide resin with high purity and high adsorption power as the dielectric film, and the useful life can be greatly extended.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明一実施例を示す縦断面図、第2
図は静電チヤツクの電極と導電体膜を示す斜視
図、第3図は他の実施例を示す縦断面図、第4図
は従来の静電チヤツクを示す縦断面図である。 1……ステージ、2……電極、3……誘電体
膜、3a……同露出部の上面、6,6a,6b…
…被覆部材、7……凹陥部、7a……同表面。
Fig. 1 is a vertical cross-sectional view showing one embodiment of the present invention;
This figure is a perspective view showing the electrodes and conductive film of an electrostatic chuck, FIG. 3 is a longitudinal sectional view showing another embodiment, and FIG. 4 is a longitudinal sectional view showing a conventional electrostatic chuck. DESCRIPTION OF SYMBOLS 1... Stage, 2... Electrode, 3... Dielectric film, 3a... Upper surface of the exposed part, 6, 6a, 6b...
...Covering member, 7...Concave portion, 7a...Same surface.

Claims (1)

【特許請求の範囲】[Claims] 1 ドライエツチング装置やスパツタ装置等にお
けるステージの被処理物固定部側に、内部に電極
を埋設した誘電体膜を取付け、上記電極に直流電
圧を印加することにより被処理物を静電的に固定
する静電チヤツクにおいて、上記ステージの上面
に上記誘電体膜とセラミツク系の被覆部材とを順
次積層するとともに、上記被覆部材に被処理物の
外径よりやや大きな内径で該被処理物の周囲を囲
繞し、かつこの被処理物の周縁部下面まで延びる
凹陥部を設け、上記誘電体膜を該凹陥部の内部に
収納される被処理物の外径より小さい範囲で、か
つ上面を上記凹陥部表面より僅かに高く位置させ
て外部に露出させたことを特徴とする静電チヤツ
ク。
1 A dielectric film with electrodes embedded inside is attached to the workpiece fixing part of the stage in dry etching equipment, sputtering equipment, etc., and the workpiece is electrostatically fixed by applying a DC voltage to the electrodes. In the electrostatic chuck, the dielectric film and the ceramic covering member are sequentially laminated on the upper surface of the stage, and the covering member has an inner diameter slightly larger than the outer diameter of the object to be processed, and a periphery of the object to be processed is surrounded by the covering member. A recessed portion surrounding the object and extending to the lower surface of the periphery of the object to be processed is provided, and the dielectric film is inserted into the recessed portion within a range smaller than the outer diameter of the object to be processed to be accommodated within the recessed portion. An electrostatic chuck characterized by being positioned slightly higher than the surface and exposed to the outside.
JP11464786A 1986-05-21 1986-05-21 Electrostatic chuck Granted JPS61257733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11464786A JPS61257733A (en) 1986-05-21 1986-05-21 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11464786A JPS61257733A (en) 1986-05-21 1986-05-21 Electrostatic chuck

Publications (2)

Publication Number Publication Date
JPS61257733A JPS61257733A (en) 1986-11-15
JPH0532184B2 true JPH0532184B2 (en) 1993-05-14

Family

ID=14643037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11464786A Granted JPS61257733A (en) 1986-05-21 1986-05-21 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPS61257733A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743692Y2 (en) * 1987-03-31 1995-10-09 株式会社ニコン Microscope stage
JPH03187240A (en) * 1989-12-18 1991-08-15 Nikon Corp Electrostatic chuck
JP2577093Y2 (en) * 1991-04-04 1998-07-23 日本カーボン株式会社 Vacuum chuck for polishing
JPH05200642A (en) * 1992-01-22 1993-08-10 Shin Etsu Chem Co Ltd Semiconductor substrate polisher

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139641A (en) * 1983-01-31 1984-08-10 Fujitsu Ltd Electrostatic sucker

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139641A (en) * 1983-01-31 1984-08-10 Fujitsu Ltd Electrostatic sucker

Also Published As

Publication number Publication date
JPS61257733A (en) 1986-11-15

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