JPH05315480A - Radiator - Google Patents

Radiator

Info

Publication number
JPH05315480A
JPH05315480A JP4117447A JP11744792A JPH05315480A JP H05315480 A JPH05315480 A JP H05315480A JP 4117447 A JP4117447 A JP 4117447A JP 11744792 A JP11744792 A JP 11744792A JP H05315480 A JPH05315480 A JP H05315480A
Authority
JP
Japan
Prior art keywords
radiator
contact
lsi
heat
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4117447A
Other languages
Japanese (ja)
Inventor
Susumu Shibata
進 柴田
Hitoshi Miyazaki
仁志 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4117447A priority Critical patent/JPH05315480A/en
Publication of JPH05315480A publication Critical patent/JPH05315480A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PURPOSE:To enable a device (the title radiator) mounted with multiple high exothermic LSI elements, etc., to be in excellent contact with respective LSI elements, etc., thereby enabling the exotherm to be dissipated in high efficiency. CONSTITUTION:The title radiator is provided with a contact parts 16c made of an elastic material having excellent thermal conductivity in contact with LSI elements, multiple cut-off holes 16d through the parts around the contact parts 16c as well as holding parts 16f formed between the cut-off holes 16d as heat conductive flow paths simultaneously filling the role of springs absorbing the dispersion in the level of LSI elements.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は発熱量の多いLSI素子
などの放熱器に関するものであり、特にバネ性を利用し
て熱伝導のための接触を良好に保つことができる放熱器
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiator such as an LSI device that generates a large amount of heat, and more particularly to a radiator that can maintain good contact for heat conduction by utilizing its spring property. is there.

【0002】[0002]

【従来の技術】図10は従来の放熱器をLSI素子に装
着した状態を示す断面図である。図において、1はLS
I素子、2はこのLSI素子1が高熱伝導接着剤3を介
して取り付けられたヒートシンク、4はこのLSI素子
1のリード、5はシリコンゴム、6はLSI素子1のリ
ード4が接着されたアルミナなどのセラミック基板、7
はバンプ、8は溶接部である。
2. Description of the Related Art FIG. 10 is a sectional view showing a state where a conventional radiator is mounted on an LSI element. In the figure, 1 is LS
I element, 2 is a heat sink to which this LSI element 1 is attached via a high thermal conductive adhesive 3, 4 is a lead of this LSI element 1, 5 is silicon rubber, 6 is alumina to which the lead 4 of the LSI element 1 is adhered Ceramic substrate, such as 7
Is a bump and 8 is a welded portion.

【0003】この構成は、セラミック基板6にTAB
(テープ・オートメイテッド・ボンディング)技術でフ
ェースダウンボンディングを行い、更に背面に同様な技
術でヒートシンク2を接続して1つのモジュールとし、
このセラミック基板6に多数のモジュールを搭載し、L
SI素子1から発生した熱を、背面に設けたヒートシン
ク2から放出するものである。このように、各LSI素
子1にそれぞれヒートシンク2を取り付けて、各LSI
素子の背面の高さが微妙に異なるのを調整することがで
きる。
In this structure, the TAB is formed on the ceramic substrate 6.
(Tape automated bonding) technology is used for face-down bonding, and the heat sink 2 is connected to the back surface with the same technology to make one module.
A large number of modules are mounted on this ceramic substrate 6, and L
The heat generated from the SI element 1 is radiated from the heat sink 2 provided on the back surface. In this way, the heat sink 2 is attached to each LSI element 1 to
It is possible to adjust that the height of the back surface of the element is slightly different.

【0004】図11は従来の他の放熱器をLSI素子に
装着した状態を示す断面図であり、特に基板にLSI素
子がフリップチップ方式で実装されている場合である。
図において、9は基板、10は高分子膜、11は熱伝導
性液体、12はヒートシンクである。
FIG. 11 is a cross-sectional view showing a state in which another conventional radiator is mounted on an LSI element, particularly when the LSI element is mounted on a substrate by a flip chip method.
In the figure, 9 is a substrate, 10 is a polymer film, 11 is a thermally conductive liquid, and 12 is a heat sink.

【0005】この構成は、ヒートシンク12に高分子膜
10によって熱伝導性液体11を取り付け、この熱伝導
性液体11がLSI素子1とヒートシンク12の間に挿
入されるものである。
In this structure, the heat conductive liquid 11 is attached to the heat sink 12 by the polymer film 10, and the heat conductive liquid 11 is inserted between the LSI element 1 and the heat sink 12.

【0006】このように、基板9の微妙なうねり、素子
接続用のバンプの高さなどによりLSI素子1の背面の
高さが微妙に異なるのを、熱伝導性液体11により調整
するものである。
As described above, the heat conductive liquid 11 is used to adjust that the height of the back surface of the LSI element 1 is slightly different due to the subtle undulations of the substrate 9 and the height of the bumps for element connection. ..

【0007】[0007]

【発明が解決しようとする課題】しかしながら、上記構
成の放熱器、特に図10に示す放熱器では、各LSI素
子にそれぞれヒートシンクを取り付ける必要があり、し
かも、LSI素子とその隣接するLSI素子の間には、
ヒートシンクが存在しないので、その分冷却効率が悪く
なる。また、図11に示す放熱器では、高分子膜で液体
を包む構造であるため、装置の高価格化を招き、また高
分子膜、液体等の熱伝導率は金属より悪いので、大きな
放熱効果は期待できないという問題点があった。
However, in the radiator having the above structure, particularly the radiator shown in FIG. 10, it is necessary to attach a heat sink to each LSI element, and moreover, between the LSI element and its adjacent LSI element. Has
Since there is no heat sink, the cooling efficiency becomes worse. Further, the radiator shown in FIG. 11 has a structure in which the liquid is wrapped with a polymer film, which leads to an increase in the cost of the device, and the thermal conductivity of the polymer film, liquid, etc. is worse than that of metal, so a large heat radiation effect is obtained. There was a problem that I could not expect.

【0008】本発明は、以上述べたヒートシンクと高さ
にバラツキのある発熱素子との熱的な接続に対し、発熱
素子毎に細かな対応を必要とするうえ、冷却効率あるい
は冷却効果が悪く、しかも装置の高価格化を招くなどと
いう問題点を除去するため、熱伝導性のよい弾性材料
に、簡単な加工を加えることにより、各発熱素子に対応
したバネ性を持たせることを目的とする。
According to the present invention, in addition to the above-mentioned thermal connection between the heat sink and the heat-generating elements having variations in height, it is necessary to make a detailed correspondence for each heat-generating element, and the cooling efficiency or the cooling effect is poor. Moreover, in order to eliminate the problem of increasing the cost of the device, the purpose is to give elastic properties corresponding to each heating element by simply processing elastic material with good thermal conductivity. ..

【0009】[0009]

【課題を解決するための手段】本発明に係る放熱器は、
LSI素子などの発熱体にそれぞれ接触する複数の接触
部と、この接触部の周辺に形成した複数個の抜き穴と、
この抜き穴間に形成された支持部とを備え、熱伝導性の
よい材料で作成するものである。
A radiator according to the present invention is
A plurality of contact portions respectively contacting a heating element such as an LSI element, and a plurality of holes formed around the contact portions,
A support portion formed between the holes is provided and is made of a material having good thermal conductivity.

【0010】[0010]

【作用】本発明は簡易な構成で、しかも高効率な放熱が
可能になる。
The present invention enables a highly efficient heat dissipation with a simple structure.

【0011】[0011]

【実施例】図1は本発明に係る放熱器の一実施例をLS
I素子に装着した状態を示す断面側面図である。図にお
いて、13はLSI素子、14はこのLSI素子13な
どを搭載した配線基板、15はこのLSI素子13を配
線基板14に電気的に接続するためのバンプ、16はそ
の詳細な側面図および要部平面図を図2に示すように、
その両端16aおよび16bが配線基板14に固定さ
れ、熱伝導性がよく、かつ弾性材料で形成された放熱
器、17はLSI素子13とこの放熱器16との熱的接
触をよくするためのサーマルグリース、18および19
はこの放熱器16に取り付けた放熱フィンである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an LS of an embodiment of a radiator according to the present invention.
It is a cross-sectional side view which shows the state mounted | worn with I element. In the figure, 13 is an LSI element, 14 is a wiring board on which the LSI element 13 and the like are mounted, 15 is a bump for electrically connecting the LSI element 13 to the wiring board 14, and 16 is a detailed side view of the same. As shown in FIG.
Both ends 16a and 16b are fixed to the wiring board 14 and have a good heat conductivity and are made of an elastic material, and 17 is a thermal element for improving the thermal contact between the LSI element 13 and the radiator 16. Grease, 18 and 19
Is a radiation fin attached to the radiator 16.

【0012】なお、図2(A)および図2(B)におい
て、16cはLSI素子13の背面が接触する接触部、
16dはこの接触部16cの周辺にくの字形に抜いた複
数個の幅h(図3参照)の抜き穴、16eはこの接触部
16cの各コーナに設けた幅g(図3参照)の抜き穴、
16fは抜き穴16d間に形成された幅l(図3参照)
のくの字形の支持部であり、熱を伝える流路になると共
に、バネとして働き、接触部16cが多少上下しても、
この支持部16fが変形することにより、その上下動を
吸収することができる。なお、この支持部16fの幅l
(図3参照)は、例えば2mm前後のとき良好な結果を示
す。16gは接触部16c間に形成した接続部であり、
この接触部16cとこの接続部16gの間には段差d
(図2(A)参照)が形成されており、この段差dはL
SI素子1の高さのばらつきを吸収するためのものであ
り、一例として、0.3mm以下で十分である。この場
合、抜き穴16dは図4(A)に示す原形状に対し、図
4(B)に示すように、少し延びるように変形するが、
この変形はバネの弾性で吸収することができる。
In FIG. 2A and FIG. 2B, 16c is a contact portion with which the back surface of the LSI element 13 contacts,
16d is a hole having a plurality of widths h (see FIG. 3) formed in a V shape around the contact portion 16c, and 16e is a width g (see FIG. 3) provided at each corner of the contact portion 16c. hole,
16f is a width 1 formed between the punched holes 16d (see FIG. 3)
It is a square-shaped support part that serves as a flow path for transmitting heat and also acts as a spring, so that even if the contact part 16c moves up and down a little,
The vertical movement of the support portion 16f can be absorbed by the deformation of the support portion 16f. The width l of the support portion 16f
(See FIG. 3) shows good results when the distance is, for example, about 2 mm. 16g is a connecting portion formed between the contact portions 16c,
A step d is formed between the contact portion 16c and the connecting portion 16g.
(See FIG. 2A) is formed, and this step d is L
This is for absorbing the variation in height of the SI element 1, and 0.3 mm or less is sufficient as an example. In this case, the punched hole 16d is deformed so as to extend slightly from the original shape shown in FIG. 4A as shown in FIG. 4B.
This deformation can be absorbed by the elasticity of the spring.

【0013】このように形成した放熱器16により、L
SI素子13で発生した熱は、放熱器16の接触部16
c−支持部16f−接続部16gより全体にひろがり、
放熱されると共に、放熱フィン18および19を介して
放熱することができる。
With the radiator 16 formed in this way, L
The heat generated in the SI element 13 is applied to the contact portion 16 of the radiator 16.
c-Supporting portion 16f-Spreading entirely from the connecting portion 16g,
The heat is radiated and the heat can be radiated via the heat radiation fins 18 and 19.

【0014】なお、この放熱器16の材料は上記したよ
うに、本質的に弾性に富み、また熱伝導能力の優れたも
のがよく、リン青銅などの銅系統のものがよいが、アル
ミを主成分にした材料など金属材料が好ましい。また、
放熱器の厚さが余り薄いと強度が得られず、逆に厚すぎ
ると加工が困難となり、重くもなる。採用する材料にも
よるが、0.3mm以上の厚さがあれば十分であり、また
3mm以下の方が加工はより容易である。また、放熱器1
6の抜き穴16dの幅h(図3参照)は材料の厚さのほ
ぼ1/2程度にしたが、それより狭くても、広くてもよ
い。また、熱の流路となる支持部16fの幅lは材料と
ほぼ同じ厚さにしたが、これより広くてもよくまた狭く
てもよいことはもちろんである。
As described above, the material of the radiator 16 is essentially elastic and excellent in heat conductivity, and is preferably a copper-based material such as phosphor bronze, but mainly aluminum. Metallic materials such as component materials are preferred. Also,
If the thickness of the radiator is too thin, the strength cannot be obtained. Conversely, if it is too thick, processing becomes difficult and heavy. Depending on the material used, a thickness of 0.3 mm or more is sufficient, and a thickness of 3 mm or less is easier to process. Also, radiator 1
The width h (see FIG. 3) of the punched hole 16d of No. 6 is about 1/2 of the thickness of the material, but it may be narrower or wider than that. Further, the width 1 of the supporting portion 16f serving as a heat flow path is set to be substantially the same as the material, but it is needless to say that it may be wider or narrower than this.

【0015】図5〜図8はそれぞれ放熱器の他の実施例
を示す要部平面図である。
5 to 8 are plan views of essential parts showing other embodiments of the radiator, respectively.

【0016】特に、図5に示す放熱器20は、抜き穴2
0aのピッチを広くとることにより、支持部20bの間
隔が広くなり、熱を伝える流路を広くとることができ
る。
Particularly, the radiator 20 shown in FIG.
By widening the pitch of 0a, the interval between the supporting portions 20b becomes wider, and the flow path for transmitting heat can be made wider.

【0017】図6に示す放熱器21は抜き穴21aをN
字形状にし、支持部21bもN字形状としたものであ
る。
The radiator 21 shown in FIG.
The support portion 21b is also N-shaped.

【0018】図7に示す放熱器22は抜き穴22aを直
線状にすることにより、支持部22bも直線状にしたも
のである。この実施例では、加工時に、わずかに矢印方
向に回転する。また、接触部22cも、押し下げると矢
印方向に回転する。
The radiator 22 shown in FIG. 7 is such that the support portion 22b is also linear by making the hole 22a linear. In this embodiment, during processing, it slightly rotates in the direction of the arrow. Further, the contact portion 22c also rotates in the arrow direction when pushed down.

【0019】図8に示す放熱器23は接触部23cの周
囲に位置する抜き穴23aおよび支持部23bを一方向
になるように形成したものである。このため、接触部2
3cを押し下げると、点線でかこんだ領域23D側は縮
み点線でかこんだ領域23Eは伸びる。このように、領
域23Dが縮むと、支持部23bがお互いに接触するよ
うになり、そのまま熱流路となる。この場合、接触部2
3cを押し下げるにあたっては湾曲させるだけでよくな
る。
The radiator 23 shown in FIG. 8 is formed by forming a hole 23a and a supporting portion 23b, which are located around the contact portion 23c, in one direction. Therefore, the contact portion 2
When 3c is pushed down, the area 23D surrounded by the dotted line contracts and the area 23E surrounded by the dotted line extends. In this way, when the region 23D contracts, the supporting portions 23b come into contact with each other, and serve as heat flow paths as they are. In this case, the contact part 2
When pushing down 3c, it is sufficient to bend it.

【0020】図9は図2に示す放熱器をフラットパック
方式のマルチチップモジュールなどに適用した場合であ
る。この実施例の場合、フラットパックの蓋24に放熱
器16を取り付けたものであり、素子の背面からも容易
に熱を放散することができる。
FIG. 9 shows a case where the radiator shown in FIG. 2 is applied to a flat pack type multi-chip module or the like. In the case of this embodiment, the radiator 16 is attached to the lid 24 of the flat pack, and the heat can be easily dissipated from the back surface of the element.

【0021】なお、上述したように、放熱器16をLS
Iチップ13に押しつけることにより、そのLSI素子
13に接触する接触部16cはLSI素子13の背面に
沿って多少押し上げられ、LSI素子13の背面と密着
する形で固定される。
As described above, the radiator 16 is connected to the LS.
By being pressed against the I-chip 13, the contact portion 16c that comes into contact with the LSI element 13 is slightly pushed up along the back surface of the LSI element 13 and is fixed so as to be in close contact with the back surface of the LSI element 13.

【0022】また、上述の説明では、LSI素子の放熱
について説明したが、これに限定せず、発熱部の熱をケ
ース(筐体)に伝える場合にも用いることができること
はもちろんである。
Further, in the above description, the heat dissipation of the LSI element has been described, but the present invention is not limited to this, and it is needless to say that it can be used for transferring the heat of the heat generating portion to the case (housing).

【0023】また、放熱器の接触部を正方形として示し
たが、これに限定せず、円形ほかの形状としてもよいこ
とはもちろんである。また、放熱器に、LSI素子の位
置決め用加工を設けてもよいことはもちろんである。
Further, although the contact portion of the radiator is shown as a square, the shape is not limited to this, and it is needless to say that it may have a shape other than a circle. In addition, it goes without saying that the radiator may be provided with positioning processing for the LSI element.

【0024】また、放熱器の接続部に、LSI素子の背
面を接触させて放熱したが、これに限定せず、拡散面に
接触させてもよいことはもちろんである。
Further, although the back surface of the LSI element is brought into contact with the connection portion of the radiator to radiate heat, the invention is not limited to this, and it goes without saying that it may be brought into contact with the diffusion surface.

【0025】また、放熱器の接触部を横方向に2個形成
した場合を示したが、これに限定せず、横方向にN個、
縦方向にN個、あるいはマトリックス状にN×M個形成
しても同様にできることはもちろんである。
Further, although the case where two contact portions of the radiator are formed in the lateral direction is shown, the present invention is not limited to this, and N contact portions are formed in the lateral direction.
Of course, the same can be done by forming N pieces in the vertical direction or N × M pieces in a matrix.

【0026】このように、別個のLSI素子を熱抵抗の
低い状態で簡単に接続することができる。
In this way, separate LSI elements can be easily connected in a state of low thermal resistance.

【0027】[0027]

【発明の効果】以上詳細に説明したように、本発明に係
る放熱器によれば、搭載したLSI素子などから発生す
る熱を、簡易な構成により容易に放散することができ
る。しかも、同時に多数の実装されたLSI素子に密着
させることができるので、簡易で、高効率な放熱が可能
になるなどの効果がある。
As described in detail above, according to the radiator of the present invention, the heat generated from the mounted LSI element or the like can be easily dissipated with a simple structure. Moreover, since it is possible to make close contact with a large number of mounted LSI elements at the same time, there is an effect that heat can be easily and efficiently dissipated.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る放熱器の一実施例をLSI素子に
装着した状態を示す断面側面図である。
FIG. 1 is a sectional side view showing a state in which an embodiment of a radiator according to the present invention is mounted on an LSI device.

【図2】図1の放熱器の側面図および平面図である。2 is a side view and a plan view of the radiator shown in FIG. 1. FIG.

【図3】図2の一部拡大した平面図である。3 is a partially enlarged plan view of FIG. 2. FIG.

【図4】図2の抜き穴の変形を示す図である。FIG. 4 is a view showing a modification of the punched hole in FIG.

【図5】本発明に係る放熱器の他の実施例を示す要部平
面図である。
FIG. 5 is a main part plan view showing another embodiment of the radiator according to the present invention.

【図6】本発明に係る放熱器の更に他の実施例を示す要
部平面図である。
FIG. 6 is a main part plan view showing still another embodiment of the radiator according to the present invention.

【図7】本発明に係る放熱器の更に他の実施例を示す要
部平面図である。
FIG. 7 is a plan view of an essential part showing still another embodiment of the radiator according to the present invention.

【図8】本発明に係る放熱器の更に他の実施例を示す要
部平面図である。
FIG. 8 is a main part plan view showing still another embodiment of the radiator according to the present invention.

【図9】本発明に係る放熱器の一実施例をLSI素子に
装着した状態を示す断面図である。
FIG. 9 is a cross-sectional view showing a state in which an embodiment of a radiator according to the present invention is mounted on an LSI device.

【図10】従来の放熱器を装着したLSI素子の断面図
である。
FIG. 10 is a cross-sectional view of an LSI device equipped with a conventional radiator.

【図11】従来の他の放熱器を装着したLSI素子の断
面図である。
FIG. 11 is a cross-sectional view of an LSI device equipped with another conventional radiator.

【符号の説明】[Explanation of symbols]

16 放熱器 18,19 放熱フィン 20〜23 放熱器 24 フラットパックの蓋 16 Radiator 18, 19 Radiating fin 20-23 Radiator 24 Flat pack lid

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 発熱体にそれぞれ接触する複数の接触部
と、この接触部の周辺に形成した複数個の抜き穴と、こ
の抜き穴間に形成された指示部とを備え、熱伝導性のよ
い材料で作られることを特徴とする放熱器。
1. A plurality of contact portions, each of which is in contact with a heating element, a plurality of holes formed around the contact portions, and an indicator formed between the holes. A radiator characterized by being made of good material.
【請求項2】 板状の弾性材料で作成することを特徴と
する請求項1記載の放熱器。
2. The radiator according to claim 1, wherein the radiator is made of a plate-shaped elastic material.
JP4117447A 1992-05-11 1992-05-11 Radiator Pending JPH05315480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4117447A JPH05315480A (en) 1992-05-11 1992-05-11 Radiator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4117447A JPH05315480A (en) 1992-05-11 1992-05-11 Radiator

Publications (1)

Publication Number Publication Date
JPH05315480A true JPH05315480A (en) 1993-11-26

Family

ID=14711884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4117447A Pending JPH05315480A (en) 1992-05-11 1992-05-11 Radiator

Country Status (1)

Country Link
JP (1) JPH05315480A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140289A (en) * 2002-10-21 2004-05-13 Funai Electric Co Ltd Heat radiation structure of electronic component and disk drive device comprising it
JP2004523128A (en) * 2001-06-11 2004-07-29 ザイリンクス インコーポレイテッド High-performance flip-chip package for heat removal with minimal thermal mismatch
US7663883B2 (en) 2004-02-13 2010-02-16 Fujitsu Limited Heat transfer mechanism, heat dissipation system, and communication apparatus
JP2014013884A (en) * 2012-06-07 2014-01-23 Toyota Industries Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004523128A (en) * 2001-06-11 2004-07-29 ザイリンクス インコーポレイテッド High-performance flip-chip package for heat removal with minimal thermal mismatch
JP2004140289A (en) * 2002-10-21 2004-05-13 Funai Electric Co Ltd Heat radiation structure of electronic component and disk drive device comprising it
US7663883B2 (en) 2004-02-13 2010-02-16 Fujitsu Limited Heat transfer mechanism, heat dissipation system, and communication apparatus
JP2014013884A (en) * 2012-06-07 2014-01-23 Toyota Industries Corp Semiconductor device

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