JPH05315264A - Method and apparatus for vaporizing and supplying liquid material as well as chemical vapor growing system - Google Patents

Abstract

PURPOSE:To precisely regulate a flow rate of a liquid material by maintaining a pressure of the material of a first system constant and regulating the flow rate of a liquid material of the other system to a predetermined flow rate to vaporize it. CONSTITUTION:A liquid material 1 discharged from a pump 8 is branched to a circulation passage 9 directed toward a tank 2 and a branch passage 10 directed toward a liquid flowrate controller 3 in the step of directing to the controller 3. A regulator 11 is provided at an end of the passage 9. The regulator 11 holds a pressure of the material 1 in the passage 9 constant. The material 1 transported along the passage 10 is regulated at its flow rate by the controller 3, and further transported to a vaporizer 4. The material 1 is heated to be vaporized in the vaporizer 4, and transported to a CVD step, etc. The flow rate is precisely regulated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid material vaporization and supply technique for supplying a liquid material in a vaporized state by precisely controlling the flow rate of the liquid material (flow rate per unit time), and a reaction gas. The present invention relates to a chemical vapor deposition system that performs a chemical vapor deposition reaction by precisely controlling the flow rate of

[0002]

2. Description of the Related Art In a step of carrying out a chemical vapor deposition method (CVD) for forming a film having a predetermined composition on a surface of a semiconductor substrate, which is one of manufacturing steps of a semiconductor device, a reaction gas is used at a flow rate of It is necessary to supply it while controlling the rate precisely. The reaction gas is usually supplied by vaporizing what is stored in a liquid state after controlling the flow rate thereof.

FIG. 7 is an overall block diagram of a conventional vaporizing and supplying apparatus for liquid material used for this purpose. Liquid material 1
Is stored in the tank 2 and is transported to the liquid mass flow 3 through a pipe communicating with the tank 2. Liquid mass flow 3
Is a device for controlling the flow rate of the liquid material 1. The liquid material 1 whose flow rate has been adjusted by the liquid mass flow 3 is further transported to the vaporizer 4 through a pipe. The vaporizer 4 is a device that heats the supplied liquid material 1 to vaporize it and convert it into gas.

To transfer the liquid material 1 to the liquid mass flow 3, the pressurized helium gas 5 is supplied from another pipe communicating with the tank 2. The liquid material 1 is pressure-fed from the tank 2 to the liquid mass flow 3 by the pressure of the helium gas 5.

The vaporizer 4 is replenished with nitrogen gas 6 for the purpose of diluting the gasified liquid material 1. The vaporizer 4 produces a mixed gas 7 of the liquid material 1 and the nitrogen gas 6
Send to VD process.

[0006]

In the conventional vaporizing and supplying apparatus for liquid material, as described above, the transportation of the liquid material 1 from the tank 2 to the liquid mass flow 3 is performed by applying a pressure using the helium gas 5. Is going. Therefore, the helium gas 5 is dissolved in the liquid material 1 that is pressure-fed to the liquid mass flow 3. Inevitably from the structure of liquid mass flow 3,
Between the inflow side and the outflow side of the liquid mass flow 3, the liquid material 1
There will be a pressure difference. As a result, the helium gas 5 dissolved in the liquid material 1 on the inflow side of the liquid mass flow 3
However, since it is separated from the liquid material 1 on the outflow side to form a two-phase fluid of the liquid material 1 and the helium gas 5, it is difficult to precisely adjust the flow rate in the liquid mass flow 3. was there.

The present invention has been made in order to solve this problem, and an object of the present invention is to provide a vaporization and supply technique for a liquid material, which enables precise adjustment of the flow rate of the liquid material.

[0008]

A method for vaporizing and supplying a liquid material according to claim 1 is a method for vaporizing and supplying a liquid material, wherein the liquid material is vaporized after adjusting a flow rate and is supplied in the form of gas. And (a) storing the liquid material,
(B) inhaling and pumping the liquid material stored in the step (a), and (c) branching the liquid material pumped in the step (b) into a plurality of systems.
(D) holding the pressure of the liquid material in the first system branched in the step (c) substantially constant, and returning the liquid material to the step (a); Adjusting the flow rate of the liquid material in the other system branched in the step (c) to a predetermined flow rate other than the system of (1), and (f) adjusting the flow rate in the step (e). Vaporizing the adjusted liquid material.

A liquid material vaporization and supply device according to a second aspect of the present invention has a structure suitable for carrying out the method according to the first aspect.

A chemical vapor deposition system according to a third aspect is provided with the vaporizing and supplying device for the liquid material according to the second aspect,
It is a chemical vapor deposition system that causes a chemical vapor deposition reaction to be caused by a reaction gas supplied by the apparatus to form a predetermined composition on a material to be processed.

[0011]

The liquid material vaporization and supply technology according to the present invention is
The stored liquid material is pumped and branched into multiple systems,
The pressure is maintained substantially constant for one of them. In each system, the liquid material is continuous with each other, so that the pressure of the liquid material in each system is substantially constant. Further, since the liquid material is sucked from the storage step or the storage means and pressure-fed, it is not necessary to replenish the helium gas or the like to apply pressure and pressure-feed it. That is, the liquid material whose flow rate is adjusted has a substantially constant pressure, and helium gas or the like does not dissolve in the liquid material. Therefore, the flow rate can be adjusted precisely (claims 1 and 2).

The chemical vapor deposition system according to the present invention is a chemical vapor deposition system for supplying a reaction gas by the liquid material vaporization and supply device according to the present invention. Therefore, in the system of the present invention, the chemical vapor deposition reaction can be carried out with the reaction gas whose supply rate is precisely adjusted (claim 3).

[0013]

【Example】

[Example 1. <Structure of Apparatus 100> FIG. 1 is an overall block diagram of a vaporization and supply apparatus 100 for a liquid material according to an embodiment of the present invention. The liquid material 1 stored in the tank 2 is pumped by the pump 8
Is sucked from the tank 2 and transported to the liquid mass flow 3. The liquid material 1 discharged from the pump 8 is branched into a circulation path 9 toward the tank 2 and a branch path 10 toward the liquid mass flow 3 in the process of moving toward the liquid mass flow 3. A regulator 11 is provided at the end of the circulation path 9. The regulator 11 is a device that keeps the pressure of the liquid material 1 in the circulation path 9 constant. The liquid material 1 transported along the branch passage 10 has its flow rate adjusted by the liquid mass flow 3, and is further transported to the vaporizer 4. In the vaporizer 4, the liquid material 1 is vaporized by heating, further diluted with nitrogen gas 6 and transported as a mixed gas 7 to a CVD process or the like.

<Structure and Operation of Regulator 11> FIG. 2 is a front sectional view of the regulator 11. The liquid material 1 transported along the circulation path 9 is supplied into the regulator 11 through the inflow port 110. Inside the regulator 11, a conical valve 113 is provided facing the valve seat 112 having a circular hole. The side surface of the conical body of the valve 113 is pressed against the circular hole of the valve seat 112 by the spring 114. The valve 113 is fixedly attached to one end of the rod 115, and the rod 115 is attached to the regulator 1
1 is slidably fitted in a guide hole 116 provided in the main body of the first unit. As the rod 115 slides while being guided by the guide hole 116, the valve 113 adjusts the gap between the valve 113 and the valve seat 112 while maintaining a fixed posture. A synthetic resin diaphragm 117 provided between the valve 113 and the main body of the regulator 11 prevents sliding of the valve 113 between a space inside the regulator 11 where the valve 113 is located and a space where the spring 114 is housed. Isolated from each other.

The liquid material 1 flowing from the inlet 110 is
After passing through the gap between the valve seat 112 and the valve 113, the outflow hole 1
It flows from 11 to the tank 2. By the function of the valve 113,
The pressure P0 of the liquid material 1 flowing in from the inflow port 110 is kept constant irrespective of the magnitude of the flow rate Q2 flowing in.

<Characteristics of Pump 8> FIG. 3 is a graph schematically showing the relationship between the pressure of the liquid material 1 discharged by the pump 8 and the flow rate. The pump 8 has a characteristic that the discharge flow rate decreases as the pressure on the discharge side increases. The pipe on the discharge side of the pump 8 is branched into a circulation path 9 and a branch path 10. The pressure of the liquid material 1 in the circulation path 9 therein is a constant pressure P0 as described above due to the action of the regulator 11. Is held. As a result, the pressure of the liquid material 1 in the discharge side pipe of the pump 8 communicating with the circulation path 9 is also maintained at the pressure P0. Therefore, the flow rate of the liquid material 1 discharged by the pump 8 is maintained at the flow rate Q0 corresponding to the pressure P0 in the graph of FIG. That is, the pump 8 works by the regulator 11 to always discharge the liquid material 1 at a constant flow rate Q0.

<Structure and Operation of Liquid Mass Flow 3> FIG. 4 shows a cross-sectional structure of a mass flow main body 30 constituting the liquid mass flow 3 and peripheral devices thereof. The liquid material 1 flowing in from the inflow hole 31 flows out to the outflow hole 32. In the flow passage formed inside the mass flow main body 30, a plurality of rectifying plates 33 that serve to regulate the flow of the liquid material 1 into a laminar flow are provided substantially parallel to the axis of the flow passage. A branch passage 34 is further provided inside the mass flow main body 30 for branching the flow of the liquid material 1 from a predetermined portion of the flow passage and joining the flow passage at another portion of the flow passage. The branch passage 34 is provided with a sensor 35 for measuring the flow rate of the liquid material 1 flowing through the flow passage, and a detection signal from the sensor 35 is transmitted to the control device 36. Although the sensor 35 directly detects the flow rate in the branch path 34,
Since the flow rate in 4 has a constant relationship with the flow rate in the flow path, the flow rate in the flow path is indirectly measured.

The control device 36 compares the measured value of the flow rate represented by the signal with the set value of the flow rate, and sends a feedback control signal to the drive device 37 in order to adjust the flow rate in the direction of narrowing the difference. To do. In response to this control signal, the drive device 37 operates the flow rate control valve 38 in the opening or closing direction to adjust the width of the flow path of the liquid material 1. Thereby, the flow rate of the liquid material 1 flowing through the mass flow main body 30 can be adjusted to a predetermined set value.

<Principle of Precise Flow Rate Adjustment> Returning to FIG. 1, the pressure and flow rate of the liquid material 1 discharged from the pump 8 are constant pressure P0 and constant flow rate Q0, respectively, as described above. Retained. Since the pipe on the discharge side of the pump 8 branches into the circulation path 9 and the branch path 10, the liquid material 1 discharged at the flow rate Q0 has the flow rates Q1 and Q2, respectively. Divert to and. Between these flow rates, of course,

[0020]

[Equation 1]

There is a relationship of The liquid mass flow 3 serves to adjust the flow rate Q1 as necessary. Flow rate Q1
Even when the liquid mass flow 3 is set to a relatively high value or a low value, as described above, the regulator 11
Is a constant pressure P0 of the liquid material 1 in the circulation path 9.
Therefore, the discharge flow rate of the pump 8 is maintained at a constant flow rate Q0. Therefore, the flow rate Q2 in the circulation path 9 is decreased or increased by the amount corresponding to the increase or decrease of the flow rate Q1 so as to keep the relation of the expression 1. That is, the regulator 11 maintains the pressure in the circulation path 9 at a constant pressure P0 by varying the flow rate Q2 so as to complement the variation of the flow rate Q1. Therefore, even if the liquid mass flow 3 increases or decreases the flow rate Q1, the load of the pump 8 does not change, and the pump 8 can always operate stably. The branch passage 10 communicates with the circulation passage 9, so that the pressure of the liquid material 1 in the branch passage 10 is also maintained at a constant pressure P0.

That is, even if the liquid mass flow 3 increases or decreases the flow rate Q1, the pressure of the liquid material 1 flowing into the liquid mass flow 3 is kept constant by the action of the regulator 11, and the pump 8 also operates stably. To do. Further, in this apparatus 100, the helium gas 5 is not used to pump the liquid material 1 to the liquid mass flow 3, and there is no gas dissolved in the liquid material 1 flowing into the liquid mass flow 3. As a result, the liquid mass flow 3 can accurately and stably adjust the flow rate Q1 of the liquid material 1. [Example 2. FIG. 5 is an overall block diagram of a vaporization and supply device 101 for a liquid material according to the second embodiment of the present invention. In this embodiment, the branch path 10 is further divided into branch paths 12a and 12b.
To two systems, which are connected to liquid mass flowers 3a and 3b, which are independently installed. The liquid mass flowers 3a and 3b are respectively provided with vaporizers 4 through pipes.
a and 4b are connected, and the liquid materials 1 whose flow rates are adjusted by the liquid mass flowers 3a and 3b are vaporizers 4a and 4a, respectively.
It is vaporized in b. The vaporized liquid material 1 is diluted with nitrogen gas 6a and 6b, respectively, and mixed gas 7a and 7b is mixed.
It is transported to the CVD process as b. Liquid mass flow 3
a and 3b and vaporizers 4a and 4b are the same components as the liquid mass flow 3 and vaporizer 4, respectively.

The flow rates Q1a and Q1b are independently adjusted by the liquid mass flowers 3a and 3b. At this time, according to the fluctuation of the flow rate Q1a, Q1b,

[0024]

[Equation 2]

The flow rate Q2 fluctuates so as to complement the fluctuations of the flow rate Q1a, Q1b while maintaining the relationship of. Therefore, the flow rate Q0 is kept constant. In addition, the branch road 12
Since a and 12b are in communication with the circulation path 9, the pressure of the liquid material 1 in the branch paths 12a and 12b is maintained at a constant pressure P0. Therefore, in this device 101,
The liquid mass flow 3a, 3b is precise, stable, and independently of each other without interference with each other, the flow rate Q1a, Q of the liquid material 1.
1b can be adjusted.

[Embodiment 3] FIG. 6 is an overall block diagram of a CVD system 200 incorporating the apparatus 100.
The gas 7 whose flow rate is precisely adjusted is CV from the device 100.
It is supplied to the D device 20. The CVD device 20 has a reaction chamber 21.
The reaction chamber 21 forms a space isolated from the outside air, and holds the semiconductor substrate that is the material to be processed in this space. The gas 7 is introduced into the reaction chamber 21 and causes a chemical vapor deposition reaction under conditions such as a predetermined temperature to form a film having a predetermined composition on the surface of the semiconductor substrate.

[Embodiment 4] The apparatus 100 or apparatus 101 according to the first or second embodiment requires not only the purpose of supplying the reaction gas having the adjusted flow rate to the CVD step but also the supply of the gas after the flow rate is precisely adjusted. Applications that can be applied are generally applicable.

[0028]

In the liquid material vaporization and supply technique of the present invention, the liquid material whose flow rate is adjusted has a substantially constant pressure, and helium gas or the like does not dissolve in the liquid material. Therefore, there is an effect that the flow rate can be precisely adjusted (claims 1 and 2).

In the chemical vapor deposition system according to the present invention, the reaction gas is supplied by the liquid material vaporization and supply device according to the present invention. Therefore, the chemical vapor deposition reaction is carried out with the reaction gas whose supply rate is precisely adjusted. There is an effect to be obtained (Claim 3).

[Brief description of drawings]

FIG. 1 is an overall block diagram of a liquid material vaporization and supply device according to an embodiment of the present invention.

FIG. 2 is a front sectional view of a regulator according to an embodiment of the present invention.

FIG. 3 is a graph schematically showing the discharge characteristic of the pump according to the embodiment of the present invention.

FIG. 4 is a schematic view of a liquid mass flow in one embodiment of the present invention.

FIG. 5 is an overall block diagram of a vaporization and supply device for a liquid material according to a second embodiment of the present invention.

FIG. 6 is an overall block diagram of a chemical vapor deposition system in a third embodiment of the present invention.

FIG. 7 is an overall block diagram of a conventional vaporization and supply device for a liquid material.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Liquid material 2 Tank 3 Liquid mass flow 4 Vaporizer 7 Gas 8 Pump 9 Circulation path 10 Branch path 100 Liquid material vaporization supply device

[Procedure amendment]

[Submission date] December 1, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0003

[Correction method] Change

[Correction content]

FIG . 6 is an overall block diagram of a conventional vaporizing and supplying apparatus for liquid material used for this purpose. Liquid material 1
Is stored in the tank 2 and is transported to the liquid flow rate controller 3 through a pipe communicating with the tank 2. Liquid flow control
The container 3 is a device that controls the flow rate of the liquid material 1. liquid
The liquid material 1 whose flow rate is adjusted by the flow rate controller 3 is further transported to the vaporizer 4 by piping. The vaporizer 4 is a device that vaporizes the supplied liquid material 1 by heating and converts it into a gas.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0004

[Correction method] Change

[Correction content]

A pressurized helium gas 5 is supplied from another pipe communicating with the tank 2 for transporting the liquid material 1 to the liquid flow rate controller 3. Helium gas 5
By the pressure of the liquid material 1 is a liquid flow system from tank 2
It is pumped to the instrument 3.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0006

[Correction method] Change

[Correction content]

[0006]

In the conventional vaporizing and supplying apparatus for liquid material, as described above, the transportation of the liquid material 1 from the tank 2 to the liquid flow rate controller 3 is applied with a pressure using the helium gas 5. It is done by things. Because of this, liquid
Helium gas 5 is dissolved in the liquid material 1 that is pressure-fed to the flow rate controller 3. Inevitably than the structure of the liquid flow rate controller 3, between the inlet side and the outlet side of the liquid flow rate controller 3, the difference in pressure is generated in the liquid material 1. As a result, liquid flow control
The helium gas 5 dissolved in the liquid material 1 on the inflow side of the vessel 3 is separated from the liquid material 1 on the outflow side,
Since the liquid material 1 and the helium gas 5 form a two-phase fluid, there is a problem that it is difficult to precisely adjust the flow rate in the liquid flow rate controller 3.

[Procedure correction 4]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction content]

[0013]

[Examples] [Example 1. <Structure of Apparatus 100> FIG. 1 is an overall block diagram of a vaporization and supply apparatus 100 for a liquid material according to an embodiment of the present invention. The liquid material 1 stored in the tank 2 is pumped by the pump 8
Is sucked from the tank 2 and transported to the liquid flow rate controller 3. Liquid material discharged from the pump 81 is branched into a branch path 10 toward the circulation passage 9 and the liquid flow controller 3 which in the course towards the liquid flow controller 3 toward the tank 2. A regulator 11 is provided at the end of the circulation path 9. The regulator 11 is a device that keeps the pressure of the liquid material 1 in the circulation path 9 constant. The liquid material 1 transported along the branch path 10 has its flow rate adjusted by the liquid flow rate controller 3, and is further transported to the vaporizer 4. In the vaporizer 4, the liquid material 1 is vaporized by heating, further diluted with nitrogen gas 6 and transported as a mixed gas 7 to a CVD process or the like.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Delete

[Procedure Amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Delete

[Procedure Amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction content]

There is a relationship of The flow rate Q1 is adjusted by the function of the liquid flow controller 3 as needed. Flow rate Q
Even when 1 is set to a relatively high value or a low value by the liquid flow rate controller 3, the regulator 11 keeps the pressure of the liquid material 1 in the circulation path 9 at a constant pressure P0 as described above. As a result, the discharge flow rate of the pump 8 is maintained at a constant flow rate Q0. Therefore, the flow rate Q2 in the circulation path 9 is set so that the flow rate Q1
Is decreased or increased by an amount corresponding to the increase or decrease of. That is, the regulator 11 maintains the pressure in the circulation path 9 at a constant pressure P0 by varying the flow rate Q2 so as to complement the variation of the flow rate Q1. Therefore, even if the liquid flow controller 3 increases or decreases the flow rate Q1, the load of the pump 8 does not change and the pump 8 can always operate stably. The branch passage 10 communicates with the circulation passage 9, and therefore the liquid material 1 in the branch passage 10 is connected to the circulation passage 9.
Is also maintained at a constant pressure P0.

[Procedure Amendment 8]

[Document name to be amended] Statement

[Name of item to be corrected] 0022

[Correction method] Change

[Correction content]

That is, the liquid flow controller 3 determines the flow rate Q1.
Even if is increased or decreased, the pressure of the liquid material 1 flowing into the liquid flow rate controller 3 is kept constant by the action of the regulator 11, and the pump 8 also operates stably. Further, in this apparatus 100, the helium gas 5 is not used to pump the liquid material 1 to the liquid flow rate controller 3, and the liquid flow rate control is performed.
There are no dissolved gases in the liquid material 1 entering the vessel 3. As a result, the liquid flow rate controller 3 can accurately and stably adjust the flow rate Q1 of the liquid material 1. [Example 2. FIG. 4 is an overall block diagram of a vaporization and supply device 101 for a liquid material according to a second embodiment of the present invention. In this embodiment, the branch path 10 is further divided into the branch path 12a,
It is branched into two systems to 12b, and these are connected to liquid flow rate controllers 3a and 3b which are independently installed.
Liquid flow controller 3a, the 3b, respectively vaporizer 4a through a pipe, 4b are connected, a liquid flow controller 3
The liquid materials 1 whose flow rates have been adjusted by a and 3b are vaporized in vaporizers 4a and 4b, respectively. The vaporized liquid material 1 is diluted with nitrogen gas 6a and 6b, respectively, and is transported to the CVD process as mixed gas 7a and 7b. Liquid flow
The quantity controllers 3a and 3b and the vaporizers 4a and 4b are the same components as the liquid flow rate controller 3 and the vaporizer 4, respectively.

[Procedure Amendment 9]

[Document name to be amended] Statement

[Name of item to be corrected] 0023

[Correction method] Change

[Correction content]

The liquid flow controllers 3a and 3b independently adjust the flow rates Q1a and Q1b. At this time,
Depending on the change of flow rate Q1a, Q1b,

[Procedure Amendment 10]

[Document name to be amended] Statement

[Name of item to be corrected] 0025

[Correction method] Change

[Correction content]

The flow rate Q2 fluctuates so as to complement the fluctuations of the flow rate Q1a, Q1b while maintaining the relationship of. Therefore, the flow rate Q0 is kept constant. In addition, the branch road 12
Since a and 12b are in communication with the circulation path 9, the pressure of the liquid material 1 in the branch paths 12a and 12b is maintained at a constant pressure P0. Therefore, in this device 101,
The liquid flow rate controllers 3a, 3b precisely and stably and independently of each other without interference with each other, the flow rate Q1a of the liquid material 1,
Q1b can be adjusted.

[Procedure Amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction content]

[Embodiment 3] FIG. 5 is an overall block diagram of a CVD system 200 incorporating the apparatus 100.
The gas 7 whose flow rate is precisely adjusted is CV from the device 100.
It is supplied to the D device 20. The CVD device 20 has a reaction chamber 21.
The reaction chamber 21 forms a space isolated from the outside air, and holds the semiconductor substrate that is the material to be processed in this space. The gas 7 is introduced into the reaction chamber 21 and causes a chemical vapor deposition reaction under conditions such as a predetermined temperature to form a film having a predetermined composition on the surface of the semiconductor substrate.

[Procedure Amendment 12]

[Document name to be amended] Statement

[Name of item to be corrected] Brief explanation of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is an overall block diagram of a liquid material vaporization and supply device according to an embodiment of the present invention.

FIG. 2 is a front sectional view of a regulator according to an embodiment of the present invention.

FIG. 3 is a graph schematically showing the discharge characteristic of the pump according to the embodiment of the present invention.

FIG. 4 is a diagram showing a liquid material gas in the second embodiment of the present invention .
It is a whole block diagram of a chemical supply device.

FIG. 5: Chemical vapor deposition in the third embodiment of the present invention
It is a whole block diagram of a system.

FIG. 6 is an overall block diagram of a conventional liquid material vaporization and supply device.
It is a figure.

[Explanation of Codes] 1 Liquid Material 2 Tank 3 Liquid Flow Controller 4 Vaporizer 7 Gas 8 Pump 9 Circulation Path 10 Branch Path 100 Liquid Material Vaporization Supply Device

[Procedure Amendment 14]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 1

[Correction method] Change

[Correction content]

[Figure 1]

[Procedure Amendment 15]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 4

[Correction method] Change

[Correction content]

[Figure 4]

[Procedure 16]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 5

[Correction method] Change

[Correction content]

[Figure 5]

[Procedure Amendment 17]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 6

[Correction method] Change

[Correction content]

[Figure 6]

[Procedure 18]

[Document name to be corrected] Drawing

[Correction target item name] Figure 7

[Correction method] Delete

Claims (3)

[Claims] 1. A method for vaporizing and supplying a liquid material, which comprises vaporizing the liquid material after adjusting a flow rate and supplying the liquid material in the form of a gas, comprising: (a) storing the liquid material; and (b). Inhaling and pumping the liquid material stored in the step (a); (c) branching the liquid material pumped in the step (b) into a plurality of systems; and (d) the step (C) maintaining the pressure of the liquid material in the first system branched in the (c) substantially constant and returning the liquid material to the step (a); and (e) other than the first system. A step of adjusting the flow rate of the liquid material in the other system branched in the step (c) to a predetermined flow rate, and (f) the liquid having the flow rate adjusted in the step (e). A method for vaporizing and supplying a liquid material, comprising the step of vaporizing the material. 2. A vaporization and supply device for a liquid material, which vaporizes the liquid material after adjusting the flow rate and supplies the liquid material in the form of a gas, comprising: (a) means for storing the liquid material; and (b). Means for sucking and pumping the liquid material stored in the means (a), (c) means for branching the liquid material pumped by the means (b) into a plurality of systems, and (d) the means (C) means for returning the liquid material to the means (a) while maintaining the pressure of the liquid material in the first system branched in (c) substantially constant; and (e) other than the first system. Means for adjusting the flow rate of the liquid material in the other system branched by the means (c) to a predetermined flow rate, and (f) the liquid having the flow rate adjusted by the means (e). A vaporization supply device for a liquid material, comprising: a means for vaporizing the material. 3. A chemical vapor deposition system for supplying a reaction gas having a regulated flow rate and causing a chemical vapor deposition reaction by the reaction gas to form a predetermined composition on a material to be treated. ) Means for storing a liquid material in which the reaction gas is in a liquid state, (b) means for sucking and pumping the liquid material stored in the means (a)
(C) a means for branching the liquid material pumped by the means (b) into a plurality of systems, and (d) a pressure of the liquid material in the first system branched by the means (c) is substantially constant. Means for returning the liquid material to the means (a), and (e) the means (c) other than the first system.
Means for adjusting the flow rate of the liquid material in the other system branched in step 1 to a predetermined flow rate, and (f) means for vaporizing the liquid material whose flow rate is adjusted in the means (e). And (g) define a space isolated from the outside air,
And a chemical vapor deposition chamber in which the chemical vapor deposition reaction is caused in the liquid material vaporized by the means (f) to form the predetermined composition in the material to be treated. system.