JPH0531362U - High frequency signal switch - Google Patents

High frequency signal switch

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Publication number
JPH0531362U
JPH0531362U JP8545091U JP8545091U JPH0531362U JP H0531362 U JPH0531362 U JP H0531362U JP 8545091 U JP8545091 U JP 8545091U JP 8545091 U JP8545091 U JP 8545091U JP H0531362 U JPH0531362 U JP H0531362U
Authority
JP
Japan
Prior art keywords
pin diode
high frequency
frequency
frequency signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8545091U
Other languages
Japanese (ja)
Other versions
JP2518906Y2 (en
Inventor
範行 加賀屋
健三 占部
雅樹 須藤
三樹男 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP1991085450U priority Critical patent/JP2518906Y2/en
Publication of JPH0531362U publication Critical patent/JPH0531362U/en
Application granted granted Critical
Publication of JP2518906Y2 publication Critical patent/JP2518906Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【目的】 ピンダイオードを用いた高周波信号開閉器の
ピンダイオードの固有静電容量による影響を軽減するこ
とによって高周波信号の適用周波数範囲を高い方へ広げ
る。 【構成】 高周波信号の経路に挿入されたピンダイオー
ド1の出力側端子とアース間に使用高周波信号の周波数
を共振周波数とするインダクタL1 とC1 の直列共振回
路2を設け、その中間接続点とバイアス電源との間に高
抵抗R1 を挿入/短絡する切替回路3を設けて、バイア
ス電源オン/オフに対応して高抵抗R1 を短絡/挿入し
て、バイアス電源をオフにして高周波信号をオフにした
時、直列共振回路2の極めて小さい共振抵抗がピンダイ
オードの負荷となるように構成した。
(57) [Abstract] [Purpose] To widen the applicable frequency range of high frequency signals by reducing the effect of the intrinsic capacitance of the pin diode of the high frequency signal switch using the pin diode. [Configuration] A series resonance circuit 2 of inductors L 1 and C 1 having a resonance frequency of the frequency of a used high frequency signal is provided between an output side terminal of a pin diode 1 inserted in a high frequency signal path and ground, and an intermediate connection point thereof. A switching circuit 3 for inserting / short-circuiting the high resistance R 1 is provided between the bias power supply and the bias power supply, and the high resistance R 1 is short-circuited / inserted in response to the bias power supply on / off, and the bias power supply is turned off to generate a high frequency When the signal is turned off, the extremely small resonance resistance of the series resonance circuit 2 serves as a load for the pin diode.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、通信機器に用いられ、PINダイオードを使用した高周波信号開閉 器に関するものである。 The present invention relates to a high frequency signal switch used for communication equipment and using a PIN diode.

【0002】[0002]

【従来の技術】[Prior Art]

上記高周波信号開閉器として従来は、PINダイオードの高周波に対する直列 抵抗の変化だけでオン/オフ比を得ている。 Conventionally, as the high frequency signal switch, the on / off ratio is obtained only by changing the series resistance of the PIN diode with respect to the high frequency.

【0003】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかしながら、PINダイオードの端子間の静電容量による入出力間結合があ るため抵抗値の十分なオン/オフ比、すなわちPINダイオードによる電流減衰 比が得られないため、GHz帯の開閉器として実用上問題がある。 However, since there is a coupling between input and output due to the capacitance between the terminals of the PIN diode, a sufficient on / off ratio of the resistance value, that is, the current attenuation ratio by the PIN diode cannot be obtained, so it is practically used as a switch in the GHz band. There is an upper problem.

【0004】 本考案の目的は、前記従来におけるPINダイオードの端子間静電容量による 入出力結合の問題を解決し、高周波信号における高いオン/オフ比(減衰比)を 得ることのできる高周波信号開閉器を提供することにある。An object of the present invention is to solve the problem of input / output coupling due to the capacitance between the terminals of the PIN diode in the related art and to obtain a high on / off ratio (attenuation ratio) for a high frequency signal. To provide a container.

【0005】[0005]

【課題を解決するための本考案の手段】[Means of the Invention for Solving the Problems]

本考案の高周波信号開閉器は、高周波入力信号の入力端子と出力端子との間に PINダイオードが直列に接続され該PINダイオードに流す直流バイアス電流 をオン/オフすることにより前記出力端子に現れる高周波出力信号をオン/オフ する高周波信号開閉器において、 前記PINダイオードの出力側端子とアースとの間に接続された前記高周波入 力信号の周波数を共振周波数とするインダクタとコンデンサとの直列共振回路と 、 該直列共振回路のインダクタとコンデンサの中間接続点とバイアス電源との間 に接続され高抵抗を挿入/短絡する切替回路と を備え、前記PINダイオードに流す直流バイアス電流のオン/オフと同時に 前記切替回路の高抵抗を短絡/挿入するように構成したことを特徴とするもので ある。 The high-frequency signal switch of the present invention has a PIN diode connected in series between an input terminal and an output terminal of a high-frequency input signal, and turns on / off a DC bias current flowing through the PIN diode to generate a high-frequency signal at the output terminal. A high-frequency signal switch for turning on / off an output signal, comprising: a series resonance circuit of an inductor and a capacitor, which is connected between an output side terminal of the PIN diode and ground, and has a frequency of the high-frequency input signal as a resonance frequency. A switching circuit that is connected between an intermediate connection point between the inductor and the capacitor of the series resonance circuit and the bias power supply and inserts / short-circuits a high resistance, and simultaneously turns on / off the DC bias current flowing through the PIN diode. It is characterized in that the high resistance of the switching circuit is configured to be short-circuited / inserted.

【0006】[0006]

【実施例】【Example】

図1は本考案の実施例を示す回路構成図である。 図において、1はPINダイオード(CR1 )であり、直流バイアス電流によ って高周波信号に対する抵抗値が変化する。2は直列共振回路であり、高周波信 号の周波数とほぼ等しい直列共振周波数を有するインダクタL1 とコンデンサC 1 とからなる。3は切替え回路であり、PINダイオード1のオン時とオフ時と でそれぞれ直列共振回路2のコンデンサC1 の並列抵抗R1 を短絡/挿入切替え てQを変えることにより、開閉器としての減衰比を切替える。 FIG. 1 is a circuit configuration diagram showing an embodiment of the present invention. In the figure, 1 is a PIN diode (CR1), And the resistance value for high-frequency signals changes due to the DC bias current. 2 is a series resonance circuit, which is an inductor L having a series resonance frequency substantially equal to the frequency of the high frequency signal.1And capacitor C 1 Consists of. Reference numeral 3 is a switching circuit, and the capacitor C of the series resonant circuit 2 is turned on when the PIN diode 1 is turned on and when it is turned off.1Parallel resistance R1The damping ratio as a switch is switched by switching the short circuit / insertion and changing Q.

【0007】 次に、本考案の高周波信号開閉器の動作を図2の等価回路を用いて以下に詳細 に説明する。 図2において、C2 はPINダイオード1の端子間静電容量、S2 はスイッチ でPINダイオード1のオン/オフ動作をモデル化した素子である。R2 はPI Nダイオード1のオフ時の高周波信号に対する抵抗値を示し、PINダイオード 1の等価回路は1で表す。Next, the operation of the high frequency signal switch of the present invention will be described in detail below with reference to the equivalent circuit of FIG. In FIG. 2, C 2 is a capacitance between the terminals of the PIN diode 1, and S 2 is a switch which is an element which models the ON / OFF operation of the PIN diode 1. R 2 represents the resistance value of the PIN diode 1 to a high frequency signal when it is off, and the equivalent circuit of the PIN diode 1 is represented by 1.

【0008】 図において、高周波出力信号がオン状態の場合、スイッチS1 がa側に、スイ ッチS2 がc側に接続され、直列共振回路2のコンデンサC1 に極めて小さい電 源インピーダンスR4 が並列接続されてPINダイオード1の負荷がインダクタ L1 となるため、開閉器の損失は最小の状態となる。 また、オフ状態においては、スイッチS1 はb側に、スイッチS2 はd側に接 続される。このときR2 の値が非常に大きいのでPINダイオード1は端子間静 電容量C2 とほぼ等価になり、またインダクタL1 とコンデンサC1 からなる共 振回路のQはC1 に並列接続された抵抗成分がR1 とR4 の和になるため大きく なり、共振抵抗が極めて小さくなるため開閉器の減衰が大きくなる。In the figure, when the high frequency output signal is in the ON state, the switch S 1 is connected to the a side and the switch S 2 is connected to the c side, and the capacitor C 1 of the series resonance circuit 2 has an extremely small power source impedance R. Since 4 is connected in parallel and the load of the PIN diode 1 becomes the inductor L 1 , the loss of the switch becomes the minimum state. In the OFF state, the switch S 1 is connected to the b side and the switch S 2 is connected to the d side. At this time, since the value of R 2 is very large, the PIN diode 1 becomes almost equivalent to the electrostatic capacitance C 2 between terminals, and Q of the resonance circuit consisting of the inductor L 1 and the capacitor C 1 is connected in parallel with C 1. Since the resistance component is the sum of R 1 and R 4 , the resistance component is large, and the resonance resistance is extremely small, so that the damping of the switch is large.

【0009】 図3は、本考案に基づく高周波信号開閉器の具体回路例図である。 オン時には、オン/オフ信号によりオン信号が入力され、トランジスタQ1 が オン状態となり、FETQ2 とPINダイオードCR1 に直流電流が流れ、FE TQ2 は一定の利得で増幅し、PINダイオードCR1 はほぼ損失が零になり、 共振回路もスイッチS1 がaに接続されることにより、Qが非常に小さく共振回 路の影響がないほとんどない平坦なインダクタL1 だけによる特性になっている 。この時の周波数特性を図4に示す。FIG. 3 is a schematic circuit diagram of a high frequency signal switch according to the present invention. When turned on, an on signal is input by the on / off signal, the transistor Q 1 is turned on, a direct current flows through the FET Q 2 and the PIN diode CR 1 , the FE TQ 2 is amplified with a constant gain, and the PIN diode CR 1 Has almost zero loss, and the resonance circuit has a characteristic with only a flat inductor L 1 having very small Q and almost no influence of the resonance circuit because the switch S 1 is connected to a. The frequency characteristic at this time is shown in FIG.

【0010】 オフ時には、オン/オフ信号がオフ信号となり、トランジスタQ1 がオフ状態 となりPINダイオードCR1 には直流電流が流れず、FETQ2 は減衰すると ともに、共振回路は、スイッチS1 がbに接続されることにより、Qが大きくな り、共振点の極めて小さい共振抵抗がPINダイオードの負荷抵抗となるため、 開閉器としての減衰が大きくなる。この時の周波数特性を図4に示す。所要の高 周波信号の周波数(1GHz)付近に共振点があり、オンの時と比べて約70d Bのオン/オフ比が得られる。At the time of off, the on / off signal becomes an off signal, the transistor Q 1 is turned off, a direct current does not flow through the PIN diode CR 1 , the FET Q 2 is attenuated, and the resonance circuit has a switch S 1 b By connecting to, the Q becomes large, and the resonance resistance with an extremely small resonance point becomes the load resistance of the PIN diode, so the attenuation as a switch becomes large. The frequency characteristic at this time is shown in FIG. Since there is a resonance point near the frequency (1 GHz) of the required high frequency signal, an on / off ratio of about 70 dB can be obtained compared to when it is on.

【0011】[0011]

【考案の効果】[Effect of the device]

以上詳細に説明したように、本考案によれば、共振回路とそのQの切替え回路 を追加した回路構成で高周波信号のオン/オフ比を大きく設定できるため高周波 信号用の開閉器として大きな利点がある。 As described in detail above, according to the present invention, the ON / OFF ratio of the high frequency signal can be set to a large value with the circuit configuration in which the resonance circuit and the Q switching circuit thereof are added, which is a great advantage as a switch for the high frequency signal. is there.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の実施例を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【図2】図1の等価回路図である。FIG. 2 is an equivalent circuit diagram of FIG.

【図3】本考案の具体的回路例図である。FIG. 3 is a specific circuit diagram of the present invention.

【図4】本考案のオン/オフ時の周波数特性である。FIG. 4 is a frequency characteristic when the present invention is on / off.

【符号の説明】[Explanation of symbols]

1 PINダイオード 2 直列共振回路 3 切替回路 1 PIN diode 2 Series resonance circuit 3 Switching circuit

───────────────────────────────────────────────────── フロントページの続き (72)考案者 高野 三樹男 東京都港区虎ノ門二丁目3番13号 国際電 気株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mikio Takano 2-3-13 Toranomon, Minato-ku, Tokyo Kokusai Electric Co., Ltd.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 高周波入力信号の入力端子と出力端子と
の間にPINダイオードが直列に接続され該PINダイ
オードに流す直流バイアス電流をオン/オフすることに
より前記出力端子に現れる高周波出力信号をオン/オフ
する高周波信号開閉器において、 前記PINダイオードの出力側端子とアースとの間に接
続された前記高周波入力信号の周波数を共振周波数とす
るインダクタとコンデンサとの直列共振回路と、 該直列共振回路のインダクタとコンデンサの中間接続点
とバイアス電源との間に接続され高抵抗を挿入/短絡す
る切替回路とを備え、前記PINダイオードに流す直流
バイアス電流のオン/オフと同時に前記切替回路の高抵
抗を短絡/挿入するように構成したことを特徴とする高
周波信号開閉器。
1. A PIN diode is connected in series between an input terminal and an output terminal of a high frequency input signal, and a high frequency output signal appearing at the output terminal is turned on by turning on / off a DC bias current flowing through the PIN diode. A high-frequency signal switch that turns on / off, a series resonance circuit of an inductor and a capacitor connected between the output side terminal of the PIN diode and the ground and having a frequency of the high-frequency input signal as a resonance frequency, and the series resonance circuit. And a switching circuit that is connected between an intermediate connection point between the inductor and the capacitor and a bias power supply and inserts / short-circuits a high resistance, and simultaneously turns on / off the DC bias current flowing through the PIN diode, and simultaneously increases the high resistance of the switching circuit. A high-frequency signal switch characterized by being configured to short-circuit / insert.
JP1991085450U 1991-09-24 1991-09-24 High frequency signal switch Expired - Fee Related JP2518906Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1991085450U JP2518906Y2 (en) 1991-09-24 1991-09-24 High frequency signal switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1991085450U JP2518906Y2 (en) 1991-09-24 1991-09-24 High frequency signal switch

Publications (2)

Publication Number Publication Date
JPH0531362U true JPH0531362U (en) 1993-04-23
JP2518906Y2 JP2518906Y2 (en) 1996-12-04

Family

ID=13859224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1991085450U Expired - Fee Related JP2518906Y2 (en) 1991-09-24 1991-09-24 High frequency signal switch

Country Status (1)

Country Link
JP (1) JP2518906Y2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141222A (en) * 1984-12-14 1986-06-28 Anritsu Corp Diode switch circuit
JPS6313418A (en) * 1986-07-03 1988-01-20 Fujitsu Ten Ltd Diode high frequency switch
JPH0265523A (en) * 1988-08-31 1990-03-06 Nec Corp Signal switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141222A (en) * 1984-12-14 1986-06-28 Anritsu Corp Diode switch circuit
JPS6313418A (en) * 1986-07-03 1988-01-20 Fujitsu Ten Ltd Diode high frequency switch
JPH0265523A (en) * 1988-08-31 1990-03-06 Nec Corp Signal switch

Also Published As

Publication number Publication date
JP2518906Y2 (en) 1996-12-04

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