JPH05311430A - Magnetron sputtering cathode - Google Patents

Magnetron sputtering cathode

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Publication number
JPH05311430A
JPH05311430A JP11648192A JP11648192A JPH05311430A JP H05311430 A JPH05311430 A JP H05311430A JP 11648192 A JP11648192 A JP 11648192A JP 11648192 A JP11648192 A JP 11648192A JP H05311430 A JPH05311430 A JP H05311430A
Authority
JP
Japan
Prior art keywords
target
magnetic
magnetic pole
backing plate
permanent magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11648192A
Other languages
Japanese (ja)
Inventor
Kenji Kondo
健治 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP11648192A priority Critical patent/JPH05311430A/en
Publication of JPH05311430A publication Critical patent/JPH05311430A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable the rapid exchange of a consumed magnetic material target and to improve the operating rate of a device by generating a reverse magnetic field and weakening the attraction force of permanent magnets at the time of exchanging the target. CONSTITUTION:A first magnetic pole is constituted of the columnar permanent magnet 1 and a magnetic pole 3 of a columnar soft magnetic material and a second magnetic pole is constituted of the cylindrical permanent magnet 2 and a magnetic pole 4 of a cylindrical soft magnetic material. The magnetic material target 9 is provided via a backing plate 8 made of copper having a groove 8c and is cooled via the groove 8c. Sputtering is executed by maintaining the magnetron sputtering discharge on the front surface side of the target only by the magnetic field generated by the permanent magnets 1, 2. The operation of a cooling system is stopped and reverse magnetic coils 5, 6, 7 are energized to generate the reverse magnetic fields below the coercive force of the permanent magnets 1, 2 and to weaken the attraction force of the permanent magnets 1, 2 at the time of exchanging the consumed target 9. The target 9 is then removed together with a backing plate 8 and thereafter, the currents of the reverse magnetic coils 5, 6, 7 are turned off. The target 9 is, therefore, removable in a short period of time.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体の製造に用い
られるスパッタリング装置の部品であるスパッタリング
カソードに関し、より詳しくは、前面側にプラズマが生
成される平板状の磁性体ターゲツトと、該ターゲツトの
中央部背面側に配される, 磁化方向がターゲツトの面に
垂直な第1の磁極と、該第1の磁極をとり囲み磁化方向
を第1の磁極と反対方向とした第2の磁極と、第1およ
び第2の磁極の磁性体ターゲツト側に配されターゲツト
が背面を当接させて固定されるバッキングプレートとを
備えてなるマグネトロンスパッタリングカソードの構成
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering cathode, which is a component of a sputtering apparatus used for manufacturing semiconductors, and more specifically, a flat plate-shaped magnetic substance target on which plasma is generated on the front side, and the target of the target. A first magnetic pole disposed on the back side of the central portion, the magnetization direction of which is perpendicular to the surface of the target; and a second magnetic pole which surrounds the first magnetic pole and has a magnetization direction opposite to the first magnetic pole, The present invention relates to a structure of a magnetron sputtering cathode, which comprises a backing plate which is arranged on the magnetic target side of the first and second magnetic poles and whose targets are fixed by abutting their back surfaces.

【0002】[0002]

【従来の技術】図2に従来用いられている,平板状の磁
性体ターゲツトを持つマグネトロンスパッタリングカソ
ード (以下カソード、またはマグネトロンカソードとい
う)の構成概要図を示す。カソードは、前面側 (図では
上面側) にプラズマが生成される磁性体ターゲツト9
と、このターゲツト9の中央部背面側にターゲツトの板
面と垂直方向に配される柱状の第1の磁極14と、第1の
磁極14を囲む筒状の第2の磁極15と、第1, 第2の磁極
の下端面相互間の磁路を形成する板状のヨーク16と、第
1の磁極14をとり囲む第1のコイル17と、第2の磁極15
の内側に沿うように配され第1の磁極14と逆方向に第2
の磁極15を磁化する第2のコイル18と、第2の磁極15を
外側からとり囲み第2のコイル18と同方向に第2の磁極
15を磁化する第3のコイル19と、第1および第2の磁極
14, 15の上端面にそれぞれ接触する下端面を有する, 中
央部の柱状の第1バッキングプレート磁極11および第1
バッキングプレート11をとり囲む第2バッキングプレー
ト磁極12と、第1, 第2バッキングプレート磁極11, 12
と一体化され上面に磁性体ターゲツト9が接着, 固定さ
れる,非磁性金属からなるバッキングプレート13とを主
要構成要素として構成されている。また、冷却水は図示
しない循環機構によってカソード内部を循環し、プラズ
マからのイオン照射によるターゲツト9の温度上昇と、
第1, 第2のコイル17, 18に流れる電流によるコイルの
温度上昇とを抑制する働きをする。
2. Description of the Related Art FIG. 2 shows a schematic diagram of a conventionally used magnetron sputtering cathode (hereinafter referred to as a cathode or magnetron cathode) having a flat magnetic target. The cathode is a magnetic target 9 in which plasma is generated on the front side (upper side in the figure).
A columnar first magnetic pole 14 arranged on the rear side of the center of the target 9 in the direction perpendicular to the plate surface of the target; a second cylindrical magnetic pole 15 surrounding the first magnetic pole 14; A plate-shaped yoke 16 forming a magnetic path between the lower end surfaces of the second magnetic pole, a first coil 17 surrounding the first magnetic pole 14, and a second magnetic pole 15
Is arranged along the inner side of the second pole in the opposite direction to the first magnetic pole 14.
The second coil 18 that magnetizes the magnetic pole 15 of the second magnetic pole, and the second magnetic pole that surrounds the second magnetic pole 15 from the outside in the same direction as the second coil 18.
Third coil 19 for magnetizing 15 and first and second magnetic poles
Central columnar first backing plate magnetic poles 11 and 1 having lower end surfaces respectively contacting upper end surfaces 14 and 15
A second backing plate magnetic pole 12 surrounding the backing plate 11 and first and second backing plate magnetic poles 11, 12
And a backing plate 13 made of non-magnetic metal, which is integrated with the magnetic target 9 and is adhered and fixed to the upper surface of the backing plate 13. Further, the cooling water circulates inside the cathode by a circulation mechanism (not shown), and the temperature rise of the target 9 due to the ion irradiation from the plasma,
It functions to suppress the temperature rise of the coils due to the current flowing through the first and second coils 17 and 18.

【0003】カソードがこのように構成されるマグネト
ロンスパッタリング装置による試料へのスパッタリング
成膜は、所定のガス圧力雰囲気内で磁性体ターゲツト9
と対向配置された試料もしくはその背面側に位置する平
板電極に対ターゲツト正極性の電圧を印加するととも
に、第1, 第2, 第3のコイル17, 18, 19に電流を流し
て磁性材ターゲツト9の前面側に所定の強さの環状の磁
界を形成して磁性材ターゲツト9の直前にイオンシース
と呼ばれる, 厚みの薄いプラズマ空間を形成し、この空
間の電界強度でプラズマ中のイオンを加速して磁性材タ
ーゲツト9からその原子または分子を叩き出し、これを
試料に付着させることにより行う。成膜中はもちろん冷
却水を循環させる。ターゲツト9が所定の厚さ以上削ら
れて交換するときには、コイル電源, 放電用電源, 冷却
水を止め、空気等によってカソード内部に残る水を強制
排出した上でターゲツト9をバッキングプレート13ごと
取り外す作業が一般的である。
In the sputtering film formation on the sample by the magnetron sputtering apparatus having the cathode thus constructed, the magnetic target 9 is formed in a predetermined gas pressure atmosphere.
A voltage having a positive polarity against the target is applied to the sample or the flat plate electrode located on the back side of the sample, and a current is passed through the first, second, and third coils 17, 18, 19 to target the magnetic material. An annular magnetic field of a predetermined strength is formed on the front side of 9 to form a thin plasma space called an ion sheath just before the magnetic material target 9 and the ions in the plasma are accelerated by the electric field strength of this space. Then, the atoms or molecules are knocked out from the magnetic material target 9 and attached to the sample. Cooling water is of course circulated during film formation. When replacing the target 9 after it has been cut to a specified thickness or more, stop the coil power supply, discharge power supply, cooling water, forcibly discharge the water remaining inside the cathode by air etc., and then remove the target 9 together with the backing plate 13. Is common.

【0004】[0004]

【発明が解決しようとする課題】しかし、前記カソード
には以下のような問題がある。第1に、ターゲツトとコ
イルとの両者を冷却するために第1の磁極では全体が、
また第2の磁極では内周面が水と接触し、錆の発生によ
る冷却系統の詰まり、各磁極とバッキングプレート磁極
との突合わせ面への錆の付着によるターゲツト前面側の
磁界分布の変化等が起こりやすい。第2に、コイルも、
第1, 第2のコイルが水中にあるため、これらのコイル
では電気的な絶縁のために表面および端子部に通常以上
の防水処理が必要となる。第3に、ターゲツト交換時に
周辺の部材が水で汚染され、かつカソード内に残った水
を完全に除去しきれず、カソードの内側に水分が残留す
るため、交換後の装置の立ち上げに時間がかかる。
However, the cathode has the following problems. First, in order to cool both the target and the coil, the entire first pole is
In addition, the inner surface of the second magnetic pole comes into contact with water, the cooling system is clogged due to rust, and the magnetic field distribution on the front side of the target changes due to rust adhering to the abutting surface of each magnetic pole and backing plate Is likely to occur. Secondly, the coil
Since the first and second coils are submerged in water, the coils and the terminals are required to be more waterproof than usual for electrical insulation. Thirdly, when the target is replaced, the surrounding members are contaminated with water, and the water remaining in the cathode cannot be completely removed, and the water remains inside the cathode. Therefore, it takes time to start up the device after the replacement. It takes.

【0005】本発明の目的は、冒頭記載の構成によるマ
グネトロンカソードとして、上記冷却水に起因する問題
点が解決され、かつ装置の立ち上げに多くの時間を必要
としないカソードの構成を提供することである。
An object of the present invention is to provide, as a magnetron cathode having the structure described at the beginning, a structure of the cathode which solves the problems caused by the cooling water and does not require a lot of time to start up the apparatus. Is.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、この発明においては、本発明が対象とした構成のマ
グネトロンカソード、すなわち、前面側にプラズマが生
成される平板状の磁性体ターゲツトと、該ターゲツトの
中央部背面側に配される, 磁化方向がターゲツトの面に
垂直な第1の磁極と、該第1の磁極をとり囲み磁化方向
を第1の磁極と反対方向とした第2の磁極と、第1およ
び第2の磁極の磁性体ターゲツト側に配されターゲツト
が背面を当接させて固定されるバッキングプレートとを
備えてなるマグネトロンスパッタリングカソードを、第
1および第2の磁極が少なくともその一部に永久磁石を
直列に含むとともにバッキングプレートがターゲツトを
冷却可能に形成されたカソードとする。
In order to solve the above-mentioned problems, in the present invention, a magnetron cathode having the structure intended by the present invention, that is, a flat plate-shaped magnetic substance target on which plasma is generated on the front side is provided. A first magnetic pole having a magnetization direction perpendicular to the surface of the target and a second magnetic pole surrounding the first magnetic pole and having a magnetization direction opposite to the first magnetic pole, And a backing plate which is disposed on the magnetic target side of the first and second magnetic poles and which is fixed by bringing the targets into contact with the back surfaces of the magnetron sputtering cathodes. At least a part of the cathode includes a permanent magnet in series and a backing plate is a cathode formed so that the target can be cooled.

【0007】そして、この基本構成に基づいた具体構成
を、少なくともその一部に永久磁石を直列に含む第1お
よび第2の磁極が、それぞれ、永久磁石と軟磁性材磁極
とを直列にかつ接離可能に当接させてなるとともに軟磁
性材磁極がいずれもターゲツト側に位置し、各軟磁性材
磁極にその直列の永久磁石と逆方向に軟磁性材磁極を磁
化する逆磁コイルが付加された構成とすれば極めて好適
である。
According to the concrete structure based on this basic structure, the first and second magnetic poles including a permanent magnet in series at least in a part thereof respectively connect the permanent magnet and the soft magnetic material magnetic pole in series. The soft magnetic material magnetic poles are positioned so as to be separably contacted with each other, and each soft magnetic material magnetic pole is located on the target side. It is extremely suitable to have such a configuration.

【0008】また、ターゲツトを冷却可能に形成される
バッキングプレートは、内部を冷媒が貫流可能に形成す
れば好適である。
The backing plate formed so that the target can be cooled is preferably formed so that the refrigerant can flow through the inside thereof.

【0009】[0009]

【作用】マグネトロンカソードを上記のように構成すれ
ば、磁性材ターゲツトの前面側に環状磁界を形成するた
めのコイルを必要としなくなるため、コイルの冷却が必
要なくなり、また、バッキングプレート自体が磁性材タ
ーゲツトの冷却機能をもつことになるので、従来のよう
に、コイルや磁極が水中に浸漬され、あるいは水と接触
することがなくなるため、錆の発生に基づく冷却系の詰
まりや周辺部材の汚染が防止され、またターゲツト交換
後にカソード内に水が残留せず、装置の立ち上げが速く
なる。
When the magnetron cathode is constructed as described above, the coil for forming the annular magnetic field on the front side of the magnetic material target is not required, so that cooling of the coil is not required and the backing plate itself is made of the magnetic material. Since it will have the cooling function of the target, the coil and magnetic pole will not be immersed in water or come into contact with water as in the conventional case, so that clogging of the cooling system and contamination of peripheral members due to rust will not occur. In addition, water is not left in the cathode after the target is replaced, and the device starts up quickly.

【0010】そこで、マグネトロンカソードの上記基本
構成に基づき、第1および第2の磁極を、それぞれ、永
久磁石と軟磁性材磁極とを直列にかつ接離可能に当接さ
せて形成し、かつ軟磁性材磁極をいずれもターゲツト側
に位置させて各軟磁性材磁極にその直列の永久磁石と逆
方向に軟磁性材磁極を磁化するソレノイドコイルを付加
するようにすれば、ターゲツトの交換時にソレノイドコ
イルを励磁してターゲツトに対する永久磁石の吸引力を
弱めることにより、ターゲツトの交換が極めて容易に行
われ、また、このときのソレノイドコイルへの通電時間
は短時間ですむので、コイルの冷却を必要とせず、前述
のような問題点が再び生じることもない。
Therefore, based on the above-mentioned basic structure of the magnetron cathode, the first and second magnetic poles are formed by respectively contacting the permanent magnet and the magnetic pole of the soft magnetic material in series and in a separable manner, and If all magnetic material magnetic poles are located on the target side and a solenoid coil for magnetizing the soft magnetic material magnetic poles in the opposite direction to the permanent magnets in series is added to each soft magnetic material magnetic pole, the solenoid coil will be replaced when the target is replaced. The target can be replaced very easily by exciting the magnet to weaken the attractive force of the permanent magnet to the target, and since the energization time to the solenoid coil at this time is short, it is necessary to cool the coil. In addition, the above-mentioned problems do not occur again.

【0011】なお、ターゲツトを冷却可能に形成される
バッキングプレートは、内部を冷媒が貫流できるよう、
内部に空洞あるいは流路を形成する等して、空洞あるい
は流路に冷媒を送り込む構造とすることにより、バッキ
ングプレートを含む冷却系を複雑化することなく、ター
ゲツトの冷却が可能になる。
In addition, the backing plate formed so that the target can be cooled can allow the refrigerant to flow through it.
By forming a cavity or a flow channel in the interior so as to send the refrigerant into the cavity or the flow channel, the target can be cooled without complicating the cooling system including the backing plate.

【0012】[0012]

【実施例】図1に本発明によるマグネトロンカソード構
成の一実施例を示す。第1の磁極は柱状の永久磁石1
と、この柱状永久磁石1のターゲツト9側の端面に接離
可能に当接させた柱状の軟磁性材磁極3とからなり、ま
た、第2の磁極は円筒状の永久磁石2と、この円筒状永
久磁石2のターゲツト9側の端面に接離可能に当接させ
た円筒状の軟磁性材磁極4とからなっている。各軟磁性
材磁極3, 4の上端面には、非磁性金属, ここでは銅材
からなるバッキングプレート8が接着, 固定され、各軟
磁性材磁極3, 4はバッキングプレート8を介して一体
化される。バッキングプレート8は1枚の分厚い板8a
ともう1枚の薄い板8b とで構成され、分厚い板8a の
一方の面に冷媒の流路を形成する溝8c が形成され、流
路の上面側が薄い板8b により閉鎖されている。流路の
パターンは種々のものが可能であるが、ターゲツト9が
スパッタリング中均一な温度に冷却されるように形成さ
れる。この流路に外部から送り込まれる冷媒としての冷
却水は、冷却系を構成する循環ポンプ21により、バッキ
ングプレート8を含む循環路を循環し、循環の途中冷却
器22により冷却される。
FIG. 1 shows an embodiment of the magnetron cathode structure according to the present invention. The first magnetic pole is a columnar permanent magnet 1
And a columnar soft magnetic material magnetic pole 3 which is in contact with and separated from the end face of the columnar permanent magnet 1 on the target 9 side, and the second magnetic pole is a cylindrical permanent magnet 2 and the cylinder. The permanent magnet 2 has a cylindrical soft magnetic material magnetic pole 4 abutting on the end surface of the permanent magnet 2 on the target 9 side so as to be separable. A backing plate 8 made of a non-magnetic metal, here a copper material, is adhered and fixed to the upper end surfaces of the soft magnetic material magnetic poles 3 and 4, and the soft magnetic material magnetic poles 3 and 4 are integrated via the backing plate 8. To be done. The backing plate 8 is one thick plate 8a.
And another thin plate 8b, a thick plate 8a has a groove 8c formed in one surface thereof to form a flow path for the refrigerant, and the upper surface side of the flow path is closed by the thin plate 8b. Although the flow path pattern can be various, the target 9 is formed so as to be cooled to a uniform temperature during the sputtering. Cooling water as a refrigerant sent from the outside to this flow path is circulated in a circulation path including the backing plate 8 by a circulation pump 21 which constitutes a cooling system, and is cooled by a cooler 22 in the middle of circulation.

【0013】このように構成されたマグネトロンカソー
ドによるスパッタリングは以下のように行われる。スパ
ッタリング中、逆励磁用ソレノイドコイル (以下逆磁コ
イルともいう)5, 6, 7には電流を流さず、永久磁石
1, 2による磁界だけでターゲツト前面側のマグネトロ
ン放電を維持する。冷却水はバッキングプレート8内を
循環し、ターゲツト9を冷却する。
Sputtering by the magnetron cathode thus constructed is carried out as follows. During sputtering, no current is applied to the reverse excitation solenoid coils (hereinafter also referred to as reverse magnetic coils) 5, 6 and 7, and the magnetron discharge on the front side of the target is maintained only by the magnetic fields generated by the permanent magnets 1 and 2. Cooling water circulates in the backing plate 8 to cool the target 9.

【0014】スパッタリングによるターゲツト9の消耗
が所定の深さ以上となり、ターゲツトを交換する際に
は、冷却系の運転を停止し、逆磁コイル5, 6, 7に通
電して永久磁石の保持力以下の逆方向磁界を発生させ、
永久磁石の吸着力を弱めてターゲツト9をバッキングプ
レート8ごと外し、つづいて逆磁コイル5, 6, 7の電
流を切る。通常、永久磁石の保持力を打ち消すためのコ
イル電流はかなり大きいが、通電時間は、ターゲツトを
外す間の短時間なので、冷却水を循環させてコイルを冷
却するほどの必要は生じない。
When the target 9 is consumed more than a predetermined depth due to sputtering and the target is replaced, the cooling system is stopped and the reverse magnet coils 5, 6 and 7 are energized to hold the permanent magnet. Generate the following reverse magnetic field,
The attracting force of the permanent magnet is weakened and the target 9 is removed together with the backing plate 8, and then the currents of the reverse magnetic coils 5, 6, 7 are cut off. Usually, the coil current for canceling the holding force of the permanent magnet is considerably large, but the energization time is short while the target is removed, so that it is not necessary to circulate cooling water to cool the coil.

【0015】[0015]

【発明の効果】以上に述べたように、本発明において
は、冒頭記載の構成によるマグネトロンカソード、すな
わち、前面側にプラズマが生成される平板状の磁性体タ
ーゲツトと、該ターゲツトの中央部背面側に配される,
磁化方向がターゲツトの面に垂直な第1の磁極と、該第
1の磁極をとり囲み磁化方向を第1の磁極と反対方向と
した第2の磁極と、第1および第2の磁極の磁性体ター
ゲツト側に配されターゲツトが背面を当接させて固定さ
れるバッキングプレートとを備えてなるマグネトロンス
パッタリングカソードを、第1および第2の磁極が少な
くともその一部に永久磁石を直列に含むとともにバッキ
ングプレートがターゲツトを冷却可能に形成されたもの
として、磁性体ターゲツトの場合でもターゲツト前面側
に環状磁界を形成するのに永久磁石を用いるようにした
ので、永久磁石を用いない場合に必要となるコイル冷却
が不要となり、冷却水が磁極と接触することによる錆の
発生がなくなるので、周辺部材の汚染が防止され、かつ
ターゲツト交換時にカソード内部に残留する水分もな
く、ターゲツト交換後の装置の立ち上げ時間が短縮さ
れ、装置の稼働率が向上する。また、スパッタリング中
の冷却はターゲツトのみを行えばよく、その冷却機能を
バッキングプレートにもたせることとしたので、カソー
ドの構成が簡略化される。
As described above, according to the present invention, the magnetron cathode having the structure described at the beginning, that is, the flat plate-like magnetic target on which plasma is generated on the front side, and the rear side of the central portion of the target is formed. Placed On,
A first magnetic pole whose magnetization direction is perpendicular to the surface of the target, a second magnetic pole that surrounds the first magnetic pole and has a magnetization direction opposite to the first magnetic pole, and magnetism of the first and second magnetic poles. A magnetron sputtering cathode having a backing plate disposed on the side of the body target and fixed with the back surface abutting against the back side; and a backing with the first and second magnetic poles including permanent magnets in series at least at a part thereof. As the plate is formed so that the target can be cooled, the permanent magnet is used to form the annular magnetic field on the front side of the target even in the case of the magnetic target, so the coil required when the permanent magnet is not used. No cooling is required, and no rust occurs when the cooling water comes into contact with the magnetic poles, preventing contamination of surrounding materials and replacing the target. No water remaining in the cathode internally, reduces the startup time of the apparatus after Tagetsuto replacement, improved operation rate of the apparatus. Further, the cooling during sputtering may be performed only by the target, and the cooling function is also given to the backing plate, so that the structure of the cathode is simplified.

【0016】また、第1および第2の磁極を、それぞ
れ、永久磁石と軟磁性材磁極とを直列にかつ接離可能に
当接させて形成し、かつ軟磁性材磁極をいずれもターゲ
ツト側に位置させて各軟磁性材磁極にその直列の永久磁
石と逆方向に軟磁性材磁極を磁化するソレノイドコイル
を付加することにより、ターゲツトの交換時にソレノイ
ドコイルを励磁するのみでターゲツトを永久磁石から容
易に切り離すことができ、交換作業が容易になる。
The first and second magnetic poles are formed by contacting a permanent magnet and a soft magnetic material magnetic pole in series so that they can come into contact with and separate from each other, and both the soft magnetic material magnetic poles are on the target side. By locating and adding a solenoid coil to each soft magnetic material magnetic pole to magnetize the soft magnetic material magnetic pole in the direction opposite to that of the permanent magnet in series, the target can be easily removed from the permanent magnet simply by exciting the solenoid coil when replacing the target. It is possible to separate it and it becomes easy to replace it.

【0017】また、バッキングプレートのターゲツト冷
却機能を、バッキングプレートの内部を冷媒が貫流する
ようにバッキングプレートを構成することにより付与す
るようにしたので、バッキングプレートの構造や冷却系
の構成を複雑化することなくターゲツトを冷却すること
ができ、第1, 第2の磁極用コイルの不要化と合わせ、
冷却系が安価となるメリットが得られる。
Further, since the target cooling function of the backing plate is provided by configuring the backing plate so that the refrigerant flows through the inside of the backing plate, the structure of the backing plate and the configuration of the cooling system are complicated. The target can be cooled without doing so, and the need for the first and second magnetic pole coils is eliminated,
There is an advantage that the cooling system is inexpensive.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明によるマグネトロンカソード構成の一実
施例を示す構成概要図
FIG. 1 is a schematic configuration diagram showing an embodiment of a magnetron cathode configuration according to the present invention.

【図2】従来のマグネトロンカソード構成の一例を示す
構成概要図
FIG. 2 is a schematic configuration diagram showing an example of a conventional magnetron cathode configuration.

【符号の説明】[Explanation of symbols]

1 永久磁石 2 永久磁石 3 軟磁性材磁極 4 軟磁性材磁極 5 逆磁コイル 6 逆磁コイル 7 逆磁コイル 8 バッキングプレート 9 磁性材ターゲツト 1 permanent magnet 2 permanent magnet 3 soft magnetic material magnetic pole 4 soft magnetic material magnetic pole 5 reverse magnetic coil 6 reverse magnetic coil 7 reverse magnetic coil 8 backing plate 9 magnetic material target

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】前面側にプラズマが生成される平板状の磁
性体ターゲツトと、該ターゲツトの中央部背面側に配さ
れる, 磁化方向がターゲツトの面に垂直な第1の磁極
と、該第1の磁極をとり囲み磁化方向を第1の磁極と反
対方向とした第2の磁極と、第1および第2の磁極の磁
性体ターゲツト側に配されターゲツトが背面を当接させ
て固定されるバッキングプレートとを備えてなるマグネ
トロンスパッタリングカソードにおいて、第1および第
2の磁極が少なくともその一部に永久磁石を直列に含む
とともにバッキングプレートがターゲツトを冷却可能に
形成されていることを特徴とするマグネトロンスパッタ
リングカソード。
1. A flat plate-shaped magnetic target, on the front side of which plasma is generated, a first magnetic pole, which is arranged on the rear side of the center of the target, and has a magnetization direction perpendicular to the surface of the target. A second magnetic pole, which surrounds the first magnetic pole and has a magnetization direction opposite to the first magnetic pole, is arranged on the magnetic target sides of the first and second magnetic poles, and the targets are fixed with their back surfaces in contact. A magnetron sputtering cathode comprising a backing plate, wherein the first and second magnetic poles include a permanent magnet in series at least in a part thereof and the backing plate is formed so as to cool the target. Sputtering cathode.
【請求項2】請求項第1項に記載のマグネトロンスパッ
タリングカソードにおいて、少なくともその一部に永久
磁石を直列に含む第1および第2の磁極が、それぞれ、
永久磁石と軟磁性材磁極とを直列にかつ接離可能に当接
させてなるとともに軟磁性材磁極がいずれもターゲツト
側に位置し、各軟磁性材磁極にその直列の永久磁石と逆
方向に軟磁性材磁極を磁化する逆磁コイルが付加される
ことを特徴とするマグネトロンスパッタリングカソー
ド。
2. The magnetron sputtering cathode according to claim 1, wherein the first and second magnetic poles each including a permanent magnet in series in at least a part thereof are respectively
The permanent magnet and the soft magnetic material magnetic pole are contacted in series so that they can be contacted and separated from each other, and the soft magnetic material magnetic poles are all located on the target side. A magnetron sputtering cathode characterized in that an inverse magnetic coil for magnetizing a magnetic pole of a soft magnetic material is added.
【請求項3】請求項第1項に記載のマグネトロンスパッ
タリングカソードにおいて、ターゲツトを冷却可能に形
成されるバッキングプレートは、内部を冷媒が貫流可能
に形成されることを特徴とするマグネトロンスパッタリ
ングカソード。
3. The magnetron sputtering cathode according to claim 1, wherein the backing plate formed so that the target can be cooled is formed so that a refrigerant can flow through the inside thereof.
JP11648192A 1992-05-11 1992-05-11 Magnetron sputtering cathode Pending JPH05311430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11648192A JPH05311430A (en) 1992-05-11 1992-05-11 Magnetron sputtering cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11648192A JPH05311430A (en) 1992-05-11 1992-05-11 Magnetron sputtering cathode

Publications (1)

Publication Number Publication Date
JPH05311430A true JPH05311430A (en) 1993-11-22

Family

ID=14688181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11648192A Pending JPH05311430A (en) 1992-05-11 1992-05-11 Magnetron sputtering cathode

Country Status (1)

Country Link
JP (1) JPH05311430A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006124760A (en) * 2004-10-27 2006-05-18 Aisin Seiki Co Ltd Superconducting magnetic field generator, sputtering gun and sputtering film deposition apparatus
US20120160672A1 (en) * 2010-12-28 2012-06-28 Canon Anelva Corporation Sputtering apparatus
KR101160680B1 (en) * 2009-12-03 2012-06-28 (주)에스엔텍 A cylindrical sputtering cathode
US9758857B2 (en) 2013-05-15 2017-09-12 Kobe Steel, Ltd. Deposition device and deposition method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006124760A (en) * 2004-10-27 2006-05-18 Aisin Seiki Co Ltd Superconducting magnetic field generator, sputtering gun and sputtering film deposition apparatus
JP4678481B2 (en) * 2004-10-27 2011-04-27 アイシン精機株式会社 Superconducting magnetic field generator, sputter gun, and sputtering film forming apparatus
KR101160680B1 (en) * 2009-12-03 2012-06-28 (주)에스엔텍 A cylindrical sputtering cathode
US20120160672A1 (en) * 2010-12-28 2012-06-28 Canon Anelva Corporation Sputtering apparatus
US9299544B2 (en) * 2010-12-28 2016-03-29 Canon Anelva Corporation Sputtering apparatus
US9758857B2 (en) 2013-05-15 2017-09-12 Kobe Steel, Ltd. Deposition device and deposition method
DE112014002431B4 (en) 2013-05-15 2023-02-09 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Separation device and deposition method

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