JPH05302937A - Semiconductor acceleration detector - Google Patents
Semiconductor acceleration detectorInfo
- Publication number
- JPH05302937A JPH05302937A JP4110056A JP11005692A JPH05302937A JP H05302937 A JPH05302937 A JP H05302937A JP 4110056 A JP4110056 A JP 4110056A JP 11005692 A JP11005692 A JP 11005692A JP H05302937 A JPH05302937 A JP H05302937A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration
- pedestal
- acceleration detection
- detection beam
- acceleration detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/006—Details of instruments used for thermal compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体加速度検出装置
に関し、特に半導体加速度検出装置の特性を改善するた
めの装置構造及び製造を容易にするための装置構造に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration detecting device, and more particularly to a device structure for improving the characteristics of the semiconductor acceleration detecting device and a device structure for facilitating manufacturing.
【０００２】[0002]
【従来の技術】従来の半導体加速度検出装置について図
６乃至図８を用いて説明する。図６は従来の半導体加速
度検出装置を示す斜視図である。図６乃至図８におい
て、１は印加された加速度を電気信号に変換する加速度
検出梁、２は半導体加速度検出装置のベース、３ａは上
面に加速度検出梁１の一方の端部を接着するとともに下
面をベース２に固着して加速度検出梁１の支柱となる台
座、４は加速度検出梁１の他方の端部に装着された重
り、５は加速度検出梁１より出力した電気信号を半導体
加速度検出装置の外部へ取り出すためのリードピン、６
は電気信号を加速度検出梁１からリードピン５に伝える
ワイヤ、７は加速度検出梁１の電気信号を伝えるワイヤ
６を溶着するパッド、８は加速度を電気信号に変換する
ブリッジ回路が形成されている加速度検出領域、９は接
着剤、１０はエッチング溝、Ｌは加速度検出梁１の幅、
Ｗ2 台座２の幅を示している。加速度検出梁１は一方の
端部を台座２に固定した片持ちばり形式となっているの
で、半導体加速度検出装置に加速度が加わると慣性によ
り加速度検出梁１がしなる。また、加速度検出梁１の他
方の端部に重り４が装着されているので前記のしなりは
さらに大きくなる。加速度検出梁１がしなると加速度検
出領域８が変形して内部応力を発生する。この応力によ
りピエゾ抵抗効果を有する抵抗で構成されたブリッジ回
路の電気的平衡が崩れて電位差を発生することで電気信
号に変換することができる。そして、この電気信号をパ
ッド７からワイヤ６及びリードピン５を介して外部に出
力する。2. Description of the Related Art A conventional semiconductor acceleration detecting device will be described with reference to FIGS. FIG. 6 is a perspective view showing a conventional semiconductor acceleration detecting device. 6 to 8, 1 is an acceleration detection beam for converting an applied acceleration into an electric signal, 2 is a base of a semiconductor acceleration detection device, and 3a is an upper surface to which one end of the acceleration detection beam 1 is bonded and a lower surface. Pedestal which is fixed to the base 2 and serves as a support of the acceleration detection beam 1, 4 is a weight attached to the other end of the acceleration detection beam 1, and 5 is a semiconductor acceleration detection device which outputs an electric signal output from the acceleration detection beam 1. Pin for taking out to the outside of the
Is a wire for transmitting an electric signal from the acceleration detection beam 1 to the lead pin 5, 7 is a pad for welding the wire 6 for transmitting the electric signal of the acceleration detection beam 1, and 8 is an acceleration in which a bridge circuit for converting the acceleration into an electric signal is formed. Detection area, 9 is an adhesive, 10 is an etching groove, L is the width of the acceleration detection beam 1,
The width of the W 2 pedestal 2 is shown. Since the acceleration detecting beam 1 is of a cantilever type in which one end is fixed to the pedestal 2, when the semiconductor acceleration detecting device is subjected to acceleration, the acceleration detecting beam 1 will bend due to inertia. Further, since the weight 4 is attached to the other end portion of the acceleration detection beam 1, the above-mentioned bending is further increased. When the acceleration detection beam 1 bends, the acceleration detection region 8 deforms and internal stress is generated. Due to this stress, the electrical balance of the bridge circuit composed of a resistor having a piezoresistive effect is disrupted and a potential difference is generated, whereby the electrical signal can be converted. Then, this electric signal is output to the outside from the pad 7 via the wire 6 and the lead pin 5.
【０００３】次に、従来の半導体加速度検出装置の構造
上の特徴について図７及び図８を用いて説明する。図７
は図６に示した半導体加速度検出装置の正面図、図８は
側面図である。図７に示すように、台座３ａの幅Ｗ2 は
加速度検出梁１の幅Ｌよりも大きい。そして、台座３ａ
と加速度検出梁１とはその重なる部分全体が接着剤９に
より接着されている。この接着剤９には一般にシリコン
系の高温硬化型接着剤が用いられる。高温硬化型接着剤
を用いるのは乾く時間が速いことと高い強度が得られる
ためである。Next, the structural features of the conventional semiconductor acceleration detecting device will be described with reference to FIGS. Figure 7
8 is a front view of the semiconductor acceleration detecting device shown in FIG. 6, and FIG. 8 is a side view. As shown in FIG. 7, the width W 2 of the pedestal 3a is larger than the width L of the acceleration detection beam 1. And the pedestal 3a
The acceleration detecting beam 1 and the acceleration detecting beam 1 are adhered to each other with an adhesive 9 at the entire overlapping portion. As the adhesive 9, a silicon-based high temperature curable adhesive is generally used. The reason why the high temperature curable adhesive is used is that the drying time is fast and high strength can be obtained.
【０００４】また、図８に示すように、パッド７は台座
３ａと加速度検出梁１とが重なる領域の加速度検出梁１
の上面ではなく、加速度検出梁１の長手方向の中央より
の加速度検出梁１の上面に設けられている。このパッド
７とワイヤ８との接続には超音波等によるワイヤボンデ
ィングが用いられる。Further, as shown in FIG. 8, the pad 7 has an acceleration detecting beam 1 in a region where the pedestal 3a and the acceleration detecting beam 1 overlap each other.
Is provided on the upper surface of the acceleration detecting beam 1 from the center in the longitudinal direction of the acceleration detecting beam 1. Wire bonding using ultrasonic waves or the like is used to connect the pad 7 and the wire 8.
【０００５】[0005]
【発明が解決しようとする課題】従来の半導体加速度検
出装置は以上のように構成されているので、台座３ａと
加速度検出梁１の接着面積が大きく、接着時の熱残留応
力が大きく、そのため半導体加速度検出装置の電気的特
性、例えばオフセット出力の温度特性等に悪影響を及ぼ
すという問題点があった。Since the conventional semiconductor acceleration detecting device is constructed as described above, the bonding area between the pedestal 3a and the acceleration detecting beam 1 is large, and the thermal residual stress at the time of bonding is large. There is a problem that the electrical characteristics of the acceleration detection device, such as the temperature characteristics of the offset output, are adversely affected.
【０００６】また、ワイヤ６をパッド７に超音波を用い
て打ち着ける場合、パッド７の真下に台座３ａがないた
め、ワイヤ６の打ち着け時に加速度検出梁１が不安定と
なる。ワイヤ６を打ち着ける部分の加速度検出梁１が不
安定で超音波が分散してワイヤ６がパッド７と溶着し難
いという問題点があった。When the wire 6 is struck on the pad 7 using ultrasonic waves, the pedestal 3a does not exist directly below the pad 7, so that the acceleration detection beam 1 becomes unstable when the wire 6 is struck. There is a problem in that the acceleration detecting beam 1 at the portion where the wire 6 can be struck is unstable and ultrasonic waves are dispersed, so that the wire 6 is difficult to weld to the pad 7.
【０００７】この発明は上記のような問題点を解消する
ためになされたもので、加速度検出梁と台座の接着によ
り発生する応力を逓減することにより半導体加速度検出
装置の電気的特性を改善するとともにパッドへのワイヤ
の溶接性を向上させた半導体加速度検出装置を得ること
を目的としている。The present invention has been made to solve the above problems, and improves the electrical characteristics of a semiconductor acceleration detecting device by gradually reducing the stress generated by the adhesion of the acceleration detecting beam and the pedestal. It is an object of the present invention to obtain a semiconductor acceleration detecting device in which the weldability of a wire to a pad is improved.
【０００８】[0008]
【課題を解決するための手段】第１の発明に係る半導体
加速度検出装置は、べースと、印加される加速度に応じ
て変形し、該変形によって前記加速度を電気信号に変換
する加速度検出梁と、前記ベースに固定され、前記加速
度検出梁を支持する台座と、前記台座と前記加速度検出
梁との間に設けられ、前記加速度検出梁の幅よりも狭い
接着領域で前記台座と前記加速度検出梁を接着する接着
手段とを備えて構成されている。A semiconductor acceleration detecting device according to a first aspect of the present invention is an acceleration detecting beam which is deformed in accordance with a base and an applied acceleration, and the deformation converts the acceleration into an electric signal. A pedestal fixed to the base and supporting the acceleration detection beam, and provided between the pedestal and the acceleration detection beam, and the pedestal and the acceleration detection in a bonding region narrower than the width of the acceleration detection beam. And a bonding means for bonding the beam.
【０００９】第２の発明に係る半導体加速度検出装置
は、前記台座が、前記加速度検出梁の幅より狭い幅を有
する台座を含むことを特徴とする。A semiconductor acceleration detecting device according to a second invention is characterized in that the pedestal includes a pedestal having a width narrower than a width of the acceleration detection beam.
【００１０】第３の発明に係る半導体加速度検出装置
は、ベースと、印加される加速度に応じて変形し、該変
形によって前記加速度を電気信号に変換する一方主面と
他方主面とを有する加速度検出梁と、前記ベースに固定
され、前記加速度検出梁の前記一方主面に接し、該加速
度検出梁を支持する台座と、前記ベースに固定され、前
記電気信号を該ベースの外部に取り出すリードピンと、
前記台座の直上の前記加速度検出梁の前記他方主面に形
成され、前記加速度検出梁より前記電気信号を取り出す
ためのパッドと、前記パッドに一端を取り付けられ、前
記リードピンに他端を取り付けられたワイヤとを備えて
構成されている。A semiconductor acceleration detecting device according to a third aspect of the invention is an acceleration having a base and one main surface and the other main surface which are deformed according to the applied acceleration and convert the acceleration into an electric signal by the deformation. A detection beam, a pedestal fixed to the base, in contact with the one main surface of the acceleration detection beam, and supporting the acceleration detection beam, and a lead pin fixed to the base to take out the electric signal to the outside of the base. ,
A pad formed on the other main surface of the acceleration detection beam directly above the pedestal for taking out the electric signal from the acceleration detection beam, and one end attached to the pad and the other end attached to the lead pin And a wire.
【００１１】第４の発明に係る半導体加速度検出装置
は、前記台座と前記加速度検出梁との間に設けられ、前
記加速度検出梁の幅よりも狭い接着領域で前記台座と前
記加速度検出梁の前記一方主面を接着する接着手段をさ
らに備えて構成されている。A semiconductor acceleration detecting device according to a fourth aspect of the present invention is provided between the pedestal and the acceleration detecting beam, and the pedestal and the acceleration detecting beam are provided with an adhesive region narrower than a width of the acceleration detecting beam. On the other hand, an adhesive means for adhering the main surfaces is further provided.
【００１２】第５の発明に係る半導体加速度検出装置
は、ベースと、印加される加速度に応じて変形し、該変
形によって前記加速度を電気信号に変換する加速度検出
梁と、前記ベースに固定され、前記加速度検出梁を支持
する台座と、前記台座と前記加速度検出梁との間に設け
られ、前記加速度検出梁の長手方向の前記台座の長さよ
りも短い接着領域で前記台座と前記加速度検出梁を接着
する接着手段とを備えて構成されている。A semiconductor acceleration detecting device according to a fifth aspect of the present invention is fixed to the base, an acceleration detecting beam that is deformed in response to an applied acceleration, and converts the acceleration into an electric signal by the deformation. A pedestal supporting the acceleration detection beam, and provided between the pedestal and the acceleration detection beam, the pedestal and the acceleration detection beam in a bonding region shorter than the length of the pedestal in the longitudinal direction of the acceleration detection beam. And a bonding means for bonding.
【００１３】[0013]
【作用】第１の発明における接着手段は、加速度検出梁
と台座を接着するが、接着領域が加速度検出梁の幅より
も狭いので接着面積を小さくすることができ、接着手段
が有する内部応力を減少させることができる。The bonding means in the first invention bonds the acceleration detecting beam and the pedestal. However, since the bonding area is narrower than the width of the acceleration detecting beam, the bonding area can be made smaller and the internal stress of the bonding means can be reduced. Can be reduced.
【００１４】第２の発明における台座は加速度検出梁よ
り狭いので、台座の全面に接着手段を設けても、接着手
段の有する領域の幅は加速度検出梁の幅より狭くするこ
とができる。Since the pedestal in the second aspect of the invention is narrower than the acceleration detecting beam, even if the bonding means is provided on the entire surface of the pedestal, the width of the area of the bonding means can be made narrower than the width of the acceleration detecting beam.
【００１５】第３の発明におけるパッドは、台座の直上
の加速度検出梁の他方主面に形成されることにより、外
部から加わる力に対して振動等を起こすことがなく、安
定している。ワイヤの一端は前記パッドに取り付けられ
ることとなるため、取り付けを行う際に動いて取り付け
が不十分になるなどの不具合を起こしにく、ワイヤがパ
ッドに着き易くなる。Since the pad according to the third aspect of the invention is formed on the other main surface of the acceleration detecting beam directly above the pedestal, it is stable without vibrating against a force applied from the outside. Since one end of the wire is attached to the pad, it is difficult for the wire to move due to movement and insufficient attachment, and the wire easily attaches to the pad.
【００１６】第４の発明における接着手段は、加速度検
出梁と台座を接着するが、接着領域が加速度検出梁の幅
よりも狭いので接着面積を小さくすることができ、接着
手段が有する内部応力を減少させることができる。しか
し、接着面積を小さくすることで接着強度が下がるた
め、接着手段に大きな力が加わる場合、接着面積を十分
に小さくできない。そこで、パッドを台座の直上の加速
度検出梁の他方主面に形成することにより、ワイヤをパ
ッドに取り付ける際、外部から加わる力に対して振動等
を起こすことがなく、接着手段に対して働く力を小さく
することができる。The bonding means in the fourth invention bonds the acceleration detecting beam and the pedestal. However, since the bonding area is narrower than the width of the acceleration detecting beam, the bonding area can be made small and the internal stress of the bonding means can be reduced. Can be reduced. However, since the bonding strength is reduced by reducing the bonding area, the bonding area cannot be sufficiently reduced when a large force is applied to the bonding means. Therefore, by forming a pad on the other main surface of the acceleration detection beam directly above the pedestal, when attaching the wire to the pad, the force acting on the bonding means does not occur due to the force applied from the outside, etc. Can be made smaller.
【００１７】第５の発明における接着手段は、台座と加
速度検出梁との間に設けられ、前記加速度検出梁の長手
方向の前記台座の長さよりも短い接着領域で前記台座と
前記加速度検出梁を接着するので、接着面積を小さくす
ることができ、接着手段が有する内部応力を減少させる
ことができる。The bonding means in the fifth invention is provided between the pedestal and the acceleration detection beam, and the pedestal and the acceleration detection beam are bonded to each other in a bonding region shorter than the length of the pedestal in the longitudinal direction of the acceleration detection beam. Since the bonding is performed, the bonding area can be reduced and the internal stress of the bonding means can be reduced.
【００１８】[0018]
【実施例】以下、この発明の一実施例について図１乃至
図５を用いて説明する。図１はこの発明の半導体加速度
検出装置を示す斜視図である。図２は図１に示した半導
体加速度検出装置の正面図、図３は図１に示した半導体
加速度検出装置の側面図である。図１、図２及び図３に
おいて、３は台座、Ｗ1 は台座の幅を示しており、その
他の図８と同一符号のものは図８と同一もしくは相当す
る部分を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view showing a semiconductor acceleration detecting device of the present invention. 2 is a front view of the semiconductor acceleration detecting device shown in FIG. 1, and FIG. 3 is a side view of the semiconductor acceleration detecting device shown in FIG. In FIGS. 1, 2 and 3, reference numeral 3 denotes a pedestal, W 1 denotes a width of the pedestal, and other reference numerals that are the same as those in FIG.
【００１９】まず、この発明の実施例が従来の半導体加
速度検出装置と異なる第１の点は、台座３の幅Ｗ1 が台
座３ａの幅Ｗ2 に比べて小さくなり、しかも台座３の幅
Ｗ1は加速度検出梁１の幅Ｌよりも小さくなっているこ
とである。このように加速度検出梁１の幅Ｌより小さい
ことから、台座３と加速度検出梁１との接着面積が従来
に比べて小さくなる。従って、接着時に接着剤９が有す
る熱残留応力を減少させることができる。熱残留応力を
小さくすることによりオフセット時に加速度検出領域８
にかかる応力が小さくなる。このことにより半導体加速
度検出装置の電気的特性の一つであるオフセット温度変
動量を改善することができる。この半導体加速度検出装
置の電気的特性の改善について図４及び図５を用いて説
明する。図４は半導体加速度検出装置の台座と加速度検
出梁との接着領域を示す図である。図５は図４に示した
Ａタイプ、Ｂタイプのオフセット温度変動量を示す図で
ある。図４において、１は加速度検出梁、１０はエッチ
ング溝、１１，１２は接着領域、ＡＬ1 ，ＡＬ2 は接着
領域の一辺の長さ、ＡＷ1 ，ＡＷ2 は接着領域の他の一
辺の長さを示している。接着領域の辺の長さにおいて、
ＡＬ1 ＝ＡＬ2 とＡＷ1 ×２＝ＡＷ2 という２つの関係
が成り立っている。従って、接着領域１２の面積は接着
領域１１の面積の２倍になる。そのため、図５に示すよ
うに接着領域１２には接着領域１１よりも大きな熱残留
応力が発生しており、オフセット温度変動量は図４
（ａ）に示すＡタイプの方が、図４（ｂ）に示すＢタイ
プよりも小さい。ただし、オフセット温度変動量とは、
加速度が印加されていないオフセット状態において、低
温と高温での加速度検出装置の出力の差をいう。First, the first difference between the embodiment of the present invention and the conventional semiconductor acceleration detecting device is that the width W 1 of the pedestal 3 is smaller than the width W 2 of the pedestal 3a, and the width W of the pedestal 3 is smaller. 1 is smaller than the width L of the acceleration detection beam 1. Since the width is smaller than the width L of the acceleration detection beam 1 as described above, the bonding area between the pedestal 3 and the acceleration detection beam 1 is smaller than that in the conventional case. Therefore, the thermal residual stress that the adhesive 9 has at the time of bonding can be reduced. Acceleration detection area 8 at the time of offset by reducing the thermal residual stress
The stress applied to is small. This makes it possible to improve the offset temperature fluctuation amount, which is one of the electrical characteristics of the semiconductor acceleration detection device. The improvement of the electrical characteristics of the semiconductor acceleration detecting device will be described with reference to FIGS. 4 and 5. FIG. 4 is a diagram showing a bonding area between the pedestal and the acceleration detection beam of the semiconductor acceleration detection device. FIG. 5 is a diagram showing the amounts of offset temperature fluctuation of the A type and B type shown in FIG. In FIG. 4, 1 is an acceleration detection beam, 10 is an etching groove, 11 and 12 are bonded areas, AL 1 and AL 2 are the lengths of one side of the bonded area, and AW 1 and AW 2 are the lengths of the other side of the bonded area. Is showing. In the length of the side of the bonding area,
There are two relations, AL 1 = AL 2 and AW 1 × 2 = AW 2 . Therefore, the area of the bonding area 12 is twice the area of the bonding area 11. Therefore, as shown in FIG. 5, a larger thermal residual stress is generated in the bonding area 12 than in the bonding area 11, and the offset temperature fluctuation amount is as shown in FIG.
The A type shown in (a) is smaller than the B type shown in FIG. 4 (b). However, the offset temperature fluctuation amount is
In the offset state where no acceleration is applied, it means the difference between the outputs of the acceleration detection device at low temperature and high temperature.
【００２０】なお、接着面積を小さくする方法として
は、例えば、図４における接着領域１１と接着領域１２
との関係のように接着領域を加速度検出梁１の幅方向に
縮める方法と、加速度検出梁１の長手方向に縮める方法
とがある。しかし、半導体加速度検出装置に印加される
加速度により加速度検出梁１がしなる向きの力が加わる
ため、長手方向に縮めると加速度検出梁１を支える力が
弱くなる。従って、接着面積を小さくする方法としては
加速度検出梁１の幅方向に縮めるのが有効である。As a method for reducing the adhesion area, for example, the adhesion area 11 and the adhesion area 12 in FIG.
There is a method of shrinking the adhesion region in the width direction of the acceleration detection beam 1 as in the relationship with, and a method of shrinking the adhesion region in the longitudinal direction of the acceleration detection beam 1. However, due to the acceleration applied to the semiconductor acceleration detecting device, a force in the direction in which the acceleration detection beam 1 bends is applied, so that the force supporting the acceleration detection beam 1 becomes weaker when contracted in the longitudinal direction. Therefore, it is effective to reduce the adhesion area in the width direction of the acceleration detection beam 1.
【００２１】また、図１乃至図３に示すように台座３の
幅Ｗ1 を加速度検出梁１の幅Ｌより小さくすることによ
り、台座３の全面に接着剤を塗布することができ、製造
が容易である。台座３と加速度検出梁１との材質につい
ては、熱膨張率が同じような材質を用いることが望まし
い。例えば、台座３及び加速度検出梁１にはシリコンを
用いることにより安価でかつ熱膨張率を同じにすること
ができ、熱膨張による内部応力の発生を削減することが
できる。そして、台座３と加速度検出梁１の接着位置
は、台座３が加速度検出梁１の幅方向の中心線に対して
対称になるように設けることが望ましく、これは加速度
検出梁１の出力を安定させる点で有効である。Further, as shown in FIGS. 1 to 3, by making the width W 1 of the pedestal 3 smaller than the width L of the acceleration detecting beam 1, the adhesive can be applied to the entire surface of the pedestal 3 and the manufacturing process can be improved. It's easy. As for the material of the pedestal 3 and the acceleration detection beam 1, it is desirable to use materials having similar thermal expansion coefficients. For example, by using silicon for the pedestal 3 and the acceleration detection beam 1, the thermal expansion coefficient can be made the same at a low cost, and the generation of internal stress due to thermal expansion can be reduced. It is desirable that the pedestal 3 and the acceleration detection beam 1 are bonded to each other so that the pedestal 3 is symmetrical with respect to the center line of the acceleration detection beam 1 in the width direction, which stabilizes the output of the acceleration detection beam 1. It is effective in making it happen.
【００２２】また、上記実施例では、台座３の全面に接
着剤９を塗布したが、台座３の大きさを小さくせずに接
着剤９を塗布する領域を小さくすることで、接着領域を
縮小してもよい。例えば、従来の台座３ａを用いて接着
領域の幅のみを加速度検出梁１の幅より狭くしてもよ
く、また、従来の台座３ａを用いて接着領域の加速度検
出梁１の長手方向の長さを短くしてもよく、上記実施例
と同様の効果を奏する。Although the adhesive 9 is applied to the entire surface of the pedestal 3 in the above embodiment, the adhesive area is reduced by reducing the area to which the adhesive 9 is applied without reducing the size of the pedestal 3. You may. For example, the conventional pedestal 3a may be used to make only the width of the adhesion region narrower than the width of the acceleration detection beam 1, or the conventional pedestal 3a may be used to lengthen the adhesion region in the longitudinal direction of the acceleration detection beam 1. May be shortened, and the same effect as that of the above embodiment can be obtained.
【００２３】次に、この発明の実施例が従来の半導体加
速度検出装置と異なる第２の点は、パッド７が台座３の
直上の加速度検出梁１の上面に設けられている点であ
る。ワイヤ６を超音波で打ち着けるパッド７の真下に台
座３があるため打ち着け部が打ち着け時に固定され、パ
ッド７にワイヤ６を超音波ワイヤボンディングにより接
続するとき、加速度検出梁１が振動したりして超音波が
分散されることがなく、ワイヤ６がパッド７に着き易
く、取り付け不良などが起こりにくい。The second difference between the embodiment of the present invention and the conventional semiconductor acceleration detecting device is that the pad 7 is provided on the upper surface of the acceleration detecting beam 1 directly above the pedestal 3. Since the pedestal 3 is directly below the pad 7 on which the wire 6 can be hit by ultrasonic waves, the hitting portion is fixed at the time of hitting, and when the wire 6 is connected to the pad 7 by ultrasonic wire bonding, the acceleration detection beam 1 vibrates. In this case, the ultrasonic waves are not dispersed and the wire 6 easily attaches to the pad 7, and the attachment failure is less likely to occur.
【００２４】[0024]
【発明の効果】以上のように、請求項１記載の発明の半
導体加速度検出装置によれば、台座と加速度検出梁との
間に設けられ、前記加速度検出梁の幅よりも狭い接着領
域で前記台座と前記加速度検出梁を接着する接着手段を
備えて構成されており、接着面積を小さくすることによ
り、接着手段が有する熱残留応力を小さくすることがで
き、半導体加速度検出装置の電気的特性を改善すること
ができるという効果がある。As described above, according to the semiconductor acceleration detecting device of the invention of claim 1, the semiconductor acceleration detecting device is provided between the pedestal and the acceleration detecting beam, and the bonding area is narrower than the width of the acceleration detecting beam. The pedestal and the acceleration detecting beam are bonded to each other by bonding means, and by reducing the bonding area, the thermal residual stress of the bonding means can be reduced and the electrical characteristics of the semiconductor acceleration detecting device can be reduced. The effect is that it can be improved.
【００２５】また、請求項２記載の発明の半導体加速度
検出装置によれば、台座の幅を加速度検出梁の幅より狭
くしたので、加速度検出梁と接着する台座の全面に接着
手段を設けても接着手段の有する接着領域は加速度検出
梁の幅より狭くすることができ、請求項１記載の半導体
加速度検出装置が有する効果に加えて、製造が容易にな
るという効果がある。Further, according to the semiconductor acceleration detecting device of the second aspect of the invention, the width of the pedestal is made narrower than the width of the acceleration detecting beam. Therefore, even if bonding means is provided on the entire surface of the pedestal to be bonded to the acceleration detecting beam. The bonding area of the bonding means can be made narrower than the width of the acceleration detecting beam, and in addition to the effect of the semiconductor acceleration detecting device according to the first aspect, there is an effect of facilitating manufacturing.
【００２６】また、請求項３記載の発明の半導体加速度
検出装置によれば、台座の直上の加速度検出梁の他方主
面に形成され、加速度検出梁より電気信号を取り出すた
めのパッドと、前記パッドに一端を取り付けられ、リー
ドピンに他端を取り付けられたワイヤとを備えて構成さ
れており、例えば超音波によりワイヤをパッドに打ち着
けて溶着する場合、パッドの真下に台座があるためパッ
ドにワイヤが着き易くなりワイヤとパッドとの接着性を
向上することができるという効果がある。According to another aspect of the semiconductor acceleration detecting device of the present invention, a pad formed on the other main surface of the acceleration detecting beam directly above the pedestal for extracting an electric signal from the acceleration detecting beam, and the pad. One end is attached to the pad, and the other end is attached to the lead pin.For example, when the wire is struck by ultrasonic waves and welded to the pad, the wire is attached to the pad because the pedestal is directly below the pad. It has an effect that it becomes easier to attach and the adhesiveness between the wire and the pad can be improved.
【００２７】また、請求項４記載の発明の半導体加速度
検出装置によれば、台座と加速度検出梁との間に設けら
れ、前記加速度検出梁の幅よりも狭い接着領域で前記台
座と前記加速度検出梁を接着する接着手段をさらに備え
て構成されており、請求項１及び請求項３記載の半導体
加速度検出装置の有する効果に加えて、ワイヤをパッド
に接続する際に接着手段にかかる力を減少させることに
より接着面積を小さくすることができ、容易に半導体加
速度検出装置の電気的特性を向上させることができると
いう効果がある。According to a fourth aspect of the semiconductor acceleration detecting device of the present invention, the pedestal and the acceleration detecting device are provided between the pedestal and the acceleration detecting beam, and the pedestal and the acceleration detecting device are provided in a bonding region narrower than the width of the acceleration detecting beam. It further comprises a bonding means for bonding the beam, and in addition to the effect of the semiconductor acceleration detecting device according to claim 1 and claim 3, reduces the force applied to the bonding means when connecting the wire to the pad. By doing so, there is an effect that the adhesion area can be reduced and the electrical characteristics of the semiconductor acceleration detection device can be easily improved.
【００２８】また、請求項５記載の発明の半導体加速度
検出装置によれば、台座と加速度検出梁との間に設けら
れ、前記加速度検出梁の長手方向の前記台座の長さより
も短い接着領域で前記台座と前記加速度検出梁を接着す
る接着手段を備えて構成されており、接着面積を小さく
することにより、接着手段が有する熱残留応力を小さく
することができ、半導体加速度検出装置の電気的特性を
改善することができるという効果がある。According to the semiconductor acceleration detecting device of the fifth aspect of the present invention, the semiconductor acceleration detecting device is provided between the pedestal and the acceleration detecting beam, and the bonding area is shorter than the length of the pedestal in the longitudinal direction of the acceleration detecting beam. The semiconductor acceleration detecting device is provided with an adhesive means for adhering the pedestal and the acceleration detection beam. By reducing the adhesive area, the thermal residual stress of the adhesive means can be reduced, and the electrical characteristics of the semiconductor acceleration detecting device can be reduced. There is an effect that can be improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明の一実施例による半導体加速度検出装
置を示す斜視図である。FIG. 1 is a perspective view showing a semiconductor acceleration detecting device according to an embodiment of the present invention.
【図２】この発明の一実施例による半導体加速度検出装
置を示す正面図である。FIG. 2 is a front view showing a semiconductor acceleration detecting device according to an embodiment of the present invention.
【図３】この発明の一実施例による半導体加速度検出装
置を示す側面図である。FIG. 3 is a side view showing a semiconductor acceleration detecting device according to an embodiment of the present invention.
【図４】この発明の効果を説明するための加速度検出梁
の接着領域を示す図である。FIG. 4 is a diagram showing an adhesion region of an acceleration detection beam for explaining the effect of the present invention.
【図５】図４に示した加速度検出梁の電気的特性を示す
図である。5 is a diagram showing electrical characteristics of the acceleration detection beam shown in FIG.
【図６】従来の半導体加速度検出装置を示す斜視図であ
る。FIG. 6 is a perspective view showing a conventional semiconductor acceleration detection device.
【図７】従来の半導体加速度検出装置を示す正面図であ
る。FIG. 7 is a front view showing a conventional semiconductor acceleration detection device.
【図８】従来の半導体加速度検出装置を示す側面図であ
る。FIG. 8 is a side view showing a conventional semiconductor acceleration detection device.
１ 加速度検出梁 ２ ベース ３ 台座 ４ 重り ５ リードピン ６ ワイヤ ７ パッド ８ 加速度検出領域 ９ 接着剤 １０ エッチング溝 １１，１２ 接着領域 1 Acceleration Detection Beam 2 Base 3 Pedestal 4 Weight 5 Lead Pin 6 Wire 7 Pad 8 Acceleration Detection Area 9 Adhesive 10 Etching Groove 11, 12 Adhesion Area
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年７月５日[Submission date] July 5, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【特許請求の範囲】[Claims]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００２[Name of item to be corrected] 0002
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００２】[0002]
【従来の技術】従来の半導体加速度検出装置について図
６乃至図８を用いて説明する。図６は従来の半導体加速
度検出装置を示す斜視図である。図６乃至図８におい
て、１は印加された加速度を電気信号に変換する機能を
持つ加速度検出梁、２は半導体加速度検出装置のベー
ス、３ａは上面に加速度検出梁１の一方の端部を接着す
るとともに下面をベース２に固着して加速度検出梁１の
支柱となる台座、４は加速度検出梁１の他方の端部に装
着された重り、５は加速度検出梁１より出力した電気信
号を半導体加速度検出装置の外部へ取り出すためのリー
ドピン、６は電気信号を加速度検出梁１からリードピン
５に伝えるワイヤ、７は加速度検出梁１の電気信号を伝
えるワイヤ６を溶着するパッド、８は加速度を電気信号
に変換する半導体のピエゾ抵抗効果を利用したゲージ抵
抗からなるブリッジ回路が形成されている加速度検出領
域、９は接着剤、１０はエッチング溝、Ｌは加速度検出
梁１の幅、Ｗ2 台座３ａの幅を示している。加速度検出
梁１は一方の端部を台座３ａに固定した片持ちばり形式
となっているので、半導体加速度検出装置に加速度が加
わると慣性により加速度検出梁１がしなる。また、加速
度検出梁１の他方の端部に重り４が装着されているので
前記のしなりはさらに大きくなる。加速度検出梁１がし
なると加速度検出領域８が変形して内部応力を発生す
る。この応力によりピエゾ抵抗効果を有する抵抗で構成
されたブリッジ回路の電気的平衡が崩れて電位差を発生
することで電気信号に変換することができる。そして、
この電気信号をパッド７からワイヤ６及びリードピン５
を介して外部に出力する。2. Description of the Related Art A conventional semiconductor acceleration detecting device will be described with reference to FIGS. FIG. 6 is a perspective view showing a conventional semiconductor acceleration detecting device. 6 to 8, reference numeral 1 denotes a function of converting the applied acceleration into an electric signal.
The acceleration detecting beam 2 has a base of the semiconductor acceleration detecting device, and 3a has a pedestal to which one end of the acceleration detecting beam 1 is adhered on the upper surface and the lower surface is fixed to the base 2 to be a pillar of the acceleration detecting beam 1. Is a weight attached to the other end of the acceleration detection beam 1, 5 is a lead pin for taking out an electric signal output from the acceleration detection beam 1 to the outside of the semiconductor acceleration detection device, and 6 is an electric signal from the acceleration detection beam 1 A wire for transmitting to the lead pin 5, a pad 7 for welding the wire 6 for transmitting an electric signal of the acceleration detection beam 1, and a gauge resistor 8 for converting the acceleration into an electric signal using a semiconductor piezoresistive effect.
An acceleration detection region in which a bridge circuit composed of a shield is formed, 9 is an adhesive, 10 is an etching groove, L is the width of the acceleration detection beam 1, and the width of the W 2 pedestal 3a . Since the acceleration detecting beam 1 is of a cantilever type with one end fixed to the pedestal 3a , when acceleration is applied to the semiconductor acceleration detecting device, the acceleration detecting beam 1 becomes deficient due to inertia. Further, since the weight 4 is attached to the other end portion of the acceleration detection beam 1, the above-mentioned bending is further increased. When the acceleration detection beam 1 bends, the acceleration detection region 8 deforms and internal stress is generated. Due to this stress, the electrical balance of the bridge circuit composed of a resistor having a piezoresistive effect is disrupted and a potential difference is generated, so that the electrical signal can be converted. And
This electric signal is transmitted from the pad 7 to the wire 6 and the lead pin 5.
To the outside via.
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００３[Name of item to be corrected] 0003
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００３】次に、従来の半導体加速度検出装置の構造
上の特徴について図７及び図８を用いて説明する。図７
は図６に示した半導体加速度検出装置の正面図、図８は
側面図である。図７に示すように、台座３ａの幅Ｗ2 は
加速度検出梁１の幅Ｌよりも大きい。そして、台座３ａ
と加速度検出梁１とはその重なる部分全体が接着剤９に
より接着されている。この接着剤９には一般にエポキシ
系の高温硬化型接着剤が用いられる。高温硬化型接着剤
を用いるのは高い強度が得られるためである。Next, the structural features of the conventional semiconductor acceleration detecting device will be described with reference to FIGS. Figure 7
8 is a front view of the semiconductor acceleration detecting device shown in FIG. 6, and FIG. 8 is a side view. As shown in FIG. 7, the width W 2 of the pedestal 3a is larger than the width L of the acceleration detection beam 1. And the pedestal 3a
The acceleration detecting beam 1 and the acceleration detecting beam 1 are adhered to each other with an adhesive 9 at the entire overlapping portion. As the adhesive 9, an epoxy- based high temperature curable adhesive is generally used. To use a hot-setting adhesive is because high have strength.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００４[Correction target item name] 0004
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００４】また、図８に示すように、パッド７は台座
３ａと加速度検出梁１とが重なる領域の加速度検出梁１
の上面ではなく、加速度検出梁１の長手方向の中央より
の加速度検出梁１の上面に設けられている。このパッド
７とワイヤ６との接続には超音波等によるワイヤボンデ
ィングが用いられる。Further, as shown in FIG. 8, the pad 7 has an acceleration detecting beam 1 in a region where the pedestal 3a and the acceleration detecting beam 1 overlap each other.
Is provided on the upper surface of the acceleration detecting beam 1 from the center in the longitudinal direction of the acceleration detecting beam 1. Wire bonding using ultrasonic waves or the like is used to connect the pad 7 and the wire 6 .
【手続補正５】[Procedure Amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００５[Correction target item name] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００５】[0005]
【発明が解決しようとする課題】従来の半導体加速度検
出装置は以上のように構成されているので、台座３ａと
加速度検出梁１の接着面積が大きく、接着時の熱残留応
力が大きく、そのため半導体加速度検出装置の電気的特
性、例えばオフセット出力（無負荷時）の温度特性等に
悪影響を及ぼすという問題点があった。Since the conventional semiconductor acceleration detecting device is constructed as described above, the bonding area between the pedestal 3a and the acceleration detecting beam 1 is large, and the thermal residual stress at the time of bonding is large. There is a problem that the electrical characteristics of the acceleration detection device, such as the temperature characteristics of the offset output (when there is no load) , are adversely affected.
【手続補正６】[Procedure Amendment 6]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００８】[0008]
【課題を解決するための手段】第１の発明に係る半導体
加速度検出装置は、（ａ）ベースと、（ｂ）印加される
加速度に応じて変形し、該変形を半導体のピエゾ抵抗効
果により電気信号に変換するゲージ抵抗が配設されたゲ
ージ抵抗部と、少なくとも前記ゲージ抵抗部の一部を、
加速度検出感度向上のため薄肉化した薄肉部とを有する
加速度検出梁と、（ｃ）前記ベースに固定され、前記加
速度検出梁を支持する台座と、（ｄ）前記台座と前記加
速度検出梁との間に設けられ、前記加速度検出梁の幅よ
りも狭い接着領域で前記台座と前記加速度検出梁を接着
する接着手段とを備えて構成されている。According to a first aspect of the present invention, there is provided a semiconductor acceleration detecting device comprising: (a) a base; and (b) an applied voltage.
It deforms according to the acceleration, and the deformation affects the piezoresistive effect of the semiconductor.
A sensor equipped with a gauge resistor that converts the signal into an electrical signal
The resistance portion and at least a part of the gauge resistance portion,
It has a thinned part to reduce the acceleration detection sensitivity.
An acceleration detection beam, and (c) fixed to the base,
A pedestal that supports the speed detection beam, and (d) the pedestal and the
It is provided between the speed detection beam and the width of the acceleration detection beam.
Bonding the pedestal and the acceleration detection beam in a very narrow bonding area
And an adhering means for performing the same.
【手続補正７】[Procedure Amendment 7]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００９[Correction target item name] 0009
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００９】第２の発明に係る半導体加速度検出装置
は、第１の発明の半導体加速度検出装置において、前記
台座が、前記加速度検出梁の幅より狭い幅を有する台座
を含むことを特徴とする。A semiconductor acceleration detecting device according to a second invention is the semiconductor acceleration detecting device according to the first invention , characterized in that the pedestal includes a pedestal having a width narrower than a width of the acceleration detecting beam.
【手続補正８】[Procedure Amendment 8]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１０[Correction target item name] 0010
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１０】第３の発明に係る半導体加速度検出装置
は、（ａ）ベースと、（ｂ）一方主面と、前記一方主面
に対向する他方主面と、印加される加速度に応じて変形
し、該変形を半導体のピエゾ抵抗効果により電気信号に
変換するゲージ抵抗が配設されたゲージ抵抗部と、少な
くとも前記ゲージ抵抗部の一部を、加速度検出感度向上
のため薄肉化した薄肉部とを有する加速度検出梁と、
（ｃ）前記ベースに固定され、前記加速度検出梁の前記
一方主面に接し、該加速度検出梁を支持する台座と、
（ｄ）前記ベースに固定され、前記電気信号を該ベース
の外部に取り出すリードピンと、（ｅ）前記台座の直上
の前記加速度検出梁の前記他方主面に形成され、前記加
速度検出梁より前記電気信号を取り出すためのパッド
と、（ｆ）前記パッドに一端を取り付けられ、前記リー
ドピンに他端を取り付けられたワイヤとを備えて構成さ
れている。A semiconductor acceleration detecting device according to a third aspect of the present invention is (a) a base, (b) one main surface, and the one main surface.
Deforms according to the other main surface facing the
Then, the deformation is converted into an electric signal by the piezoresistive effect of the semiconductor.
With the gauge resistance part where the gauge resistance to convert is arranged,
At least part of the gauge resistance part has improved acceleration detection sensitivity
An acceleration detection beam having a thinned portion for reducing
(C) The acceleration detection beam fixed to the base,
On the other hand, a pedestal that is in contact with the main surface and supports the acceleration detection beam,
(D) The electric signal is fixed to the base and the electric signal is transmitted to the base.
Of the lead pin to be taken out of the table, and (e) directly above the pedestal
Is formed on the other main surface of the acceleration detection beam of
Pad for extracting the electric signal from the speed detection beam
(F) One end is attached to the pad,
And a wire having the other end attached to the pin .
【手続補正９】[Procedure Amendment 9]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１１[Correction target item name] 0011
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１１】第４の発明に係る半導体加速度検出装置
は、第３の発明の半導体加速度検出装置において、
（ｇ）前記台座と前記加速度検出梁との間に設けられ、
前記加速度検出梁の幅よりも狭い接着領域で前記台座と
前記加速度検出梁の前記一方主面を接着する接着手段を
さらに備えて構成されている。A semiconductor acceleration detecting device according to a fourth invention is the semiconductor acceleration detecting device according to the third invention,
(G) is provided between the pedestal and the acceleration detection beam,
It further comprises a bonding means for bonding the pedestal and the one main surface of the acceleration detection beam in a bonding region narrower than the width of the acceleration detection beam.
【手続補正１０】[Procedure Amendment 10]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１２[Correction target item name] 0012
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１２】第５の発明に係る半導体加速度検出装置
は、（ａ）ベースと、（ｂ）印加される加速度に応じて
変形し、該変形を半導体のピエゾ抵抗効果により電気信
号に変換するゲージ抵抗が配設されたゲージ抵抗部と、
少なくとも前記ゲージ抵抗部の一部を、加速度検出感度
向上のための薄肉化した薄肉部とを有する加速度検出梁
と、（ｃ）前記ベースに固定され、前記加速度検出梁を
支持する台座と、（ｄ）前記台座と前記加速度検出梁と
の間に設けられ、前記加速度検出梁の長手方向の前記台
座の長さよりも短い接着領域で前記台座と前記加速度検
出梁を接着する接着手段とを備えて構成されている。According to a fifth aspect of the present invention, there is provided a semiconductor acceleration detecting device which comprises: (a) a base;
It is transformed and the transformation is performed by the piezoresistive effect of the semiconductor.
Gauge resistance part for converting the gauge resistance to
At least a part of the gauge resistance part is provided with acceleration detection sensitivity.
Acceleration detecting beam having thinned portion for improvement
And (c) the acceleration detection beam fixed to the base.
A pedestal for supporting, (d) the pedestal and the acceleration detection beam
Is provided between the pedestals in the longitudinal direction of the acceleration detection beam.
The pedestal and the accelerometer are used in the bonding area shorter than the length of the seat.
And a bonding means for bonding the outgoing beam .
【手続補正１１】[Procedure Amendment 11]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１９[Name of item to be corrected] 0019
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１９】まず、この発明の実施例が従来の半導体加
速度検出装置と異なる第１の点は、台座３の幅Ｗ1 が台
座３ａの幅Ｗ2 に比べて小さくなり、しかも台座３の幅
Ｗ1は加速度検出梁１の幅Ｌよりも小さくなっているこ
とである。このように加速度検出梁１の幅Ｌより小さい
ことから、台座３と加速度検出梁１との接着面積が従来
に比べて小さくなる。従って、接着時に接着剤９が有す
る熱残留応力を減少させることができる。熱残留応力を
小さくすることによりオフセット時に加速度検出領域８
にかかる応力が小さくなる。このことにより半導体加速
度検出装置の電気的特性の一つであるオフセット（無負
荷時）温度変動量を改善することができる。この半導体
加速度検出装置の電気的特性の改善について図４及び図
５を用いて説明する。図４は半導体加速度検出装置の台
座と加速度検出梁との接着領域を示す図である。図５は
図４に示したＡタイプ、Ｂタイプのオフセット温度変動
量を示す図である。図４において、１は加速度検出梁、
１０はエッチング溝、１１，１２は接着領域、ＡＬ1 ，
ＡＬ2 は接着領域の一辺の長さ、ＡＷ1 ，ＡＷ2 は接着
領域の他の一辺の長さを示している。接着領域の辺の長
さにおいて、ＡＬ1＝ＡＬ2 とＡＷ1 ×２＝ＡＷ2 とい
う２つの関係が成り立っている。従って、接着領域１２
の面積は接着領域１１の面積の２倍になる。そのため、
図５に示すように接着領域１２には接着領域１１よりも
大きな熱残留応力が発生しており、オフセット温度変動
量は図４（ａ）に示すＡタイプの方が、図４（ｂ）に示
すＢタイプよりも小さい。ただし、オフセット温度変動
量とは、加速度が印加されていない（無負荷）オフセッ
ト状態において、低温と高温での加速度検出装置の出力
の差をいう。First, the first difference between the embodiment of the present invention and the conventional semiconductor acceleration detecting device is that the width W 1 of the pedestal 3 is smaller than the width W 2 of the pedestal 3a, and the width W of the pedestal 3 is smaller. 1 is smaller than the width L of the acceleration detection beam 1. Since the width is smaller than the width L of the acceleration detection beam 1 as described above, the bonding area between the pedestal 3 and the acceleration detection beam 1 is smaller than that in the conventional case. Therefore, the thermal residual stress that the adhesive 9 has at the time of bonding can be reduced. Acceleration detection area 8 at the time of offset by reducing the thermal residual stress
The stress applied to is small. This is one of the electrical characteristics of the semiconductor acceleration detection device, which is offset (non-negative).
The temperature fluctuation amount ( during loading) can be improved. The improvement of the electrical characteristics of the semiconductor acceleration detecting device will be described with reference to FIGS. 4 and 5. FIG. 4 is a diagram showing a bonding area between the pedestal and the acceleration detection beam of the semiconductor acceleration detection device. FIG. 5 is a diagram showing the amounts of offset temperature fluctuation of the A type and B type shown in FIG. In FIG. 4, 1 is an acceleration detection beam,
10 is an etching groove, 11 and 12 are adhesion regions, AL 1 ,
AL 2 indicates the length of one side of the adhesion region, and AW 1 and AW 2 indicate the length of the other side of the adhesion region. Two relations of AL 1 = AL 2 and AW 1 × 2 = AW 2 are established in the length of the side of the adhesion region. Therefore, the bonding area 12
Area is twice as large as the area of the adhesion region 11. for that reason,
As shown in FIG. 5, a larger thermal residual stress is generated in the bonding area 12 than in the bonding area 11, and the offset temperature fluctuation amount is shown in FIG. 4 (b) for the A type shown in FIG. 4 (a). It is smaller than the B type shown. However, the offset temperature fluctuation amount refers to a difference between outputs of the acceleration detection device at low temperature and high temperature in an offset state where no acceleration is applied (no load) .
Claims (5)
加速度を電気信号に変換する加速度検出梁と、 前記ベースに固定され、前記加速度検出梁を支持する台
座と、 前記台座と前記加速度検出梁との間に設けられ、前記加
速度検出梁の幅よりも狭い接着領域で前記台座と前記加
速度検出梁を接着する接着手段と、を備えた半導体加速
度検出装置。1. A base, an acceleration detection beam which is deformed according to an applied acceleration, and which transforms the acceleration into an electric signal by the deformation, and a pedestal which is fixed to the base and supports the acceleration detection beam. A semiconductor acceleration detecting device comprising: a gluing means that is provided between the pedestal and the acceleration detection beam and that bonds the pedestal and the acceleration detection beam in a bonding region narrower than a width of the acceleration detection beam.
狭い幅を有する台座を含む請求項１記載の半導体加速度
検出装置。2. The semiconductor acceleration detecting device according to claim 1, wherein the pedestal includes a pedestal having a width narrower than a width of the acceleration detection beam.
加速度を電気信号に変換する一方主面と他方主面とを有
する加速度検出梁と、 前記ベースに固定され、前記加速度検出梁の前記一方主
面に接し、該加速度検出梁を支持する台座と、 前記ベースに固定され、前記電気信号を該ベースの外部
に取り出すリードピンと、 前記台座の直上の前記加速度検出梁の前記他方主面に形
成され、前記加速度検出梁より前記電気信号を取り出す
ためのパッドと、 前記パッドに一端を取り付けられ、前記リードピンに他
端を取り付けられたワイヤと、を備えた半導体加速度検
出装置。3. A base, an acceleration detection beam which is deformed in response to an applied acceleration, and which has one main surface and the other main surface for converting the acceleration into an electric signal by the deformation, and fixed to the base. A pedestal that is in contact with the one main surface of the acceleration detection beam and supports the acceleration detection beam; a lead pin that is fixed to the base and takes out the electric signal to the outside of the base; and the acceleration detection beam directly above the pedestal. Of the semiconductor acceleration detecting device, comprising: a pad formed on the other main surface of the pad for extracting the electric signal from the acceleration detecting beam; and a wire having one end attached to the pad and the other end attached to the lead pin. apparatus.
けられ、前記加速度検出梁の幅よりも狭い接着領域で前
記台座と前記加速度検出梁の前記一方主面を接着する接
着手段をさらに備えた請求項３記載の半導体加速度検出
装置。4. A bonding means is provided between the pedestal and the acceleration detection beam, and bonding means for bonding the pedestal and the one main surface of the acceleration detection beam in a bonding region narrower than a width of the acceleration detection beam. The semiconductor acceleration detecting device according to claim 3, further comprising:
加速度を電気信号に変換する加速度検出梁と、 前記ベースに固定され、前記加速度検出梁を支持する台
座と、 前記台座と前記加速度検出梁との間に設けられ、前記加
速度検出梁の長手方向の前記台座の長さよりも短い接着
領域で前記台座と前記加速度検出梁を接着する接着手段
と、を備えた半導体加速度検出装置。5. A base, an acceleration detection beam that is deformed in response to an applied acceleration, and converts the acceleration into an electric signal by the deformation, and a pedestal that is fixed to the base and supports the acceleration detection beam. A semiconductor provided between the pedestal and the acceleration detection beam, and a bonding means for bonding the pedestal and the acceleration detection beam in a bonding region shorter than a length of the pedestal in a longitudinal direction of the acceleration detection beam. Acceleration detection device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4110056A JPH05302937A (en) | 1992-04-28 | 1992-04-28 | Semiconductor acceleration detector |
| DE4313398A DE4313398A1 (en) | 1992-04-28 | 1993-04-23 | Semiconductor acceleration detector - has piezo-resistive cantilever transducer connected to upright support on base by connection of lesser width than that of cantilever. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4110056A JPH05302937A (en) | 1992-04-28 | 1992-04-28 | Semiconductor acceleration detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05302937A true JPH05302937A (en) | 1993-11-16 |
Family
ID=14525975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4110056A Pending JPH05302937A (en) | 1992-04-28 | 1992-04-28 | Semiconductor acceleration detector |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH05302937A (en) |
| DE (1) | DE4313398A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483106A (en) * | 1993-07-30 | 1996-01-09 | Nippondenso Co., Ltd. | Semiconductor device for sensing strain on a substrate |
| JP2001252899A (en) * | 2000-03-07 | 2001-09-18 | Akebono Brake Ind Co Ltd | Micromachining sensor element, and wedge wire bonding installation method |
| CN107576821A (en) * | 2017-09-27 | 2018-01-12 | 东南大学 | Inductance cantilever beam wireless and passive acceleration transducer |
| CN107727696A (en) * | 2017-09-27 | 2018-02-23 | 东南大学 | Inductance cantilever beam wireless and passive humidity sensor |
| CN107747981A (en) * | 2017-09-27 | 2018-03-02 | 东南大学 | Inductance cantilever beam wireless and passive flow sensor |
| CN107765036A (en) * | 2017-09-27 | 2018-03-06 | 东南大学 | Inductance two-end fixed beam wireless and passive acceleration transducer |
| CN107782472A (en) * | 2017-09-27 | 2018-03-09 | 东南大学 | Inductance two-end fixed beam wireless and passive strain gauge |
| CN107817058A (en) * | 2017-09-27 | 2018-03-20 | 东南大学 | Inductance cantilever beam wireless and passive temperature sensor |
-
1992
- 1992-04-28 JP JP4110056A patent/JPH05302937A/en active Pending
-
1993
- 1993-04-23 DE DE4313398A patent/DE4313398A1/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483106A (en) * | 1993-07-30 | 1996-01-09 | Nippondenso Co., Ltd. | Semiconductor device for sensing strain on a substrate |
| JP2001252899A (en) * | 2000-03-07 | 2001-09-18 | Akebono Brake Ind Co Ltd | Micromachining sensor element, and wedge wire bonding installation method |
| CN107576821A (en) * | 2017-09-27 | 2018-01-12 | 东南大学 | Inductance cantilever beam wireless and passive acceleration transducer |
| CN107727696A (en) * | 2017-09-27 | 2018-02-23 | 东南大学 | Inductance cantilever beam wireless and passive humidity sensor |
| CN107747981A (en) * | 2017-09-27 | 2018-03-02 | 东南大学 | Inductance cantilever beam wireless and passive flow sensor |
| CN107765036A (en) * | 2017-09-27 | 2018-03-06 | 东南大学 | Inductance two-end fixed beam wireless and passive acceleration transducer |
| CN107782472A (en) * | 2017-09-27 | 2018-03-09 | 东南大学 | Inductance two-end fixed beam wireless and passive strain gauge |
| CN107817058A (en) * | 2017-09-27 | 2018-03-20 | 东南大学 | Inductance cantilever beam wireless and passive temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4313398A1 (en) | 1993-11-04 |
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